JPH0770364B2 - Thin film resistance element - Google Patents
Thin film resistance elementInfo
- Publication number
- JPH0770364B2 JPH0770364B2 JP63054986A JP5498688A JPH0770364B2 JP H0770364 B2 JPH0770364 B2 JP H0770364B2 JP 63054986 A JP63054986 A JP 63054986A JP 5498688 A JP5498688 A JP 5498688A JP H0770364 B2 JPH0770364 B2 JP H0770364B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resistance value
- thin film
- adjustment
- resistance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 description 10
- 238000009966 trimming Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えばレーザビームの走査などにより抵抗値
の調節（以下トリミングと称する）を行なう抵抗体調整
パターンを有する薄膜抵抗素子に関するものである。Description: TECHNICAL FIELD The present invention relates to a thin film resistance element having a resistance adjusting pattern for adjusting a resistance value (hereinafter referred to as trimming) by scanning a laser beam, for example. .
第３図ないし第６図は、この種の薄膜抵抗素子の一例を
示す要部拡大平面図である。同図において、１は絶縁性
基板、2,3は抵抗体パターンの抵抗値測定用端子として
用いられる導体パターン、４は抵抗値を不連続的に調節
する抵抗値不連続調節パターン、５は抵抗値の調節が行
なわれない抵抗値非調節パターンであり、この不連続調
節パターン４と非調節パターン５とは、互いにパターン
の長さ（抵抗値）が異なるとともに電気的に並列接続さ
れて抵抗値調節用の抵抗体調整パターン６が形成され、
前述した導体パターン2,3間に多数個連続して直列接続
されている。なお、前述したパターン2,3,4,5は絶縁性
基板１上に例えば白金等の金属薄膜を形成し、この金属
薄膜をフオトエツチング等により加工して形成される。FIG. 3 to FIG. 6 are enlarged plan views of an essential part showing an example of this type of thin film resistance element. In the figure, 1 is an insulating substrate, 2 and 3 are conductor patterns used as terminals for measuring resistance values of resistor patterns, 4 is a resistance value discontinuous adjustment pattern for adjusting resistance values discontinuously, and 5 is a resistance. This is a resistance value non-adjustment pattern in which the value is not adjusted, and the discontinuous adjustment pattern 4 and the non-adjustment pattern 5 have different pattern lengths (resistance values) and are electrically connected in parallel to each other to provide a resistance value. A resistor adjustment pattern 6 for adjustment is formed,
A large number of the conductor patterns 2 and 3 described above are continuously connected in series. The patterns 2, 3, 4, and 5 described above are formed by forming a metal thin film of platinum or the like on the insulating substrate 1 and processing the metal thin film by photoetching or the like.
このように構成される薄膜抵抗素子において、抵抗値調
節は、同図に示すように不連続調節パターン４の一部に
矢印A,B,Cのいずれかの方向もしくはそれらの逆方向か
ら例えばYAGレーザのレーザビームを走査させることに
より焼切り、切断部７を形成することにより、抵抗体調
整パターン６の電気的通路を長くし、抵抗値を上昇さ
せ、導体パターン2,3間に所望の抵抗値を得ている。In the thin film resistance element configured as described above, the resistance value can be adjusted by, for example, performing YAG adjustment on a part of the discontinuous adjustment pattern 4 from one of the directions of arrows A, B, and C or the opposite direction thereof as shown in FIG. By burning with a laser beam of a laser to form a cut portion 7, the electrical path of the resistor body adjustment pattern 6 is lengthened, the resistance value is increased, and a desired resistance is obtained between the conductor patterns 2 and 3. You're getting value.
また、このように構成される薄膜抵抗素子において、不
連続調節パターン４にデジタルトリミングを行なうため
には、粗調から微調まで複数種類の抵抗体調整パターン
６が必要とされ、通常、１種類の増分に対して１種類の
パターンを必要としている。Further, in the thin film resistance element configured as described above, in order to perform digital trimming on the discontinuous adjustment pattern 4, a plurality of types of resistor adjustment patterns 6 from rough adjustment to fine adjustment are required, and normally one kind of resistor adjustment pattern 6 is required. You need one type of pattern for the increment.
しかしながら、このように構成される薄膜抵抗素子にお
いて、第３図に示す抵抗体調整パターン６では、矢印Ａ
方向，矢印Ｂ方向もしくはその逆方向からトリミングを
行なうことができ、１つのパターン増分の違うトリミン
グを行なえるが、目的の増分を得てしかもトリミング精
度およびレーザビームの走査によるダメージを考慮する
と、抵抗体調整パターン６のパターンループ内に広いス
ペースＳが必要となる。また、第４図〜第６図に示す抵
抗体調整パターン６では、パターン外部からパターン内
部に向う矢印A,B,Cの方向にトリミングするのが通常で
あり、ある１つの増分を得ることしかできず、この場合
も第３図と同様にパターンループ内に広いスペースＳが
必要となる。また、例えばパターン幅を約20μｍとし、
レーザビームのダメージ径を約70μｍ程度とした場合、
第４図に示す不連続調節パターン４の周辺部にパターン
が存在していないことから、無駄なスペースとなる。ま
た、この種の薄膜抵抗素子は、抵抗体調整パターン６が
全体の70〜80％の面積を占めていることから、これらの
抵抗体調整パターン６の縮少は極めて重要な課題となつ
ている。However, in the thin film resistance element having such a structure, in the resistor adjustment pattern 6 shown in FIG.
Direction, arrow B direction or the opposite direction, trimming can be performed with different pattern increments. However, considering the trimming accuracy and damage due to laser beam scanning, resistance A large space S is required in the pattern loop of the body adjustment pattern 6. Further, in the resistor adjustment pattern 6 shown in FIGS. 4 to 6, it is usual to perform trimming in the directions of arrows A, B, and C from the outside of the pattern toward the inside of the pattern, and only obtain one increment. This is not possible, and in this case as well, a wide space S is required in the pattern loop as in FIG. Also, for example, the pattern width is about 20 μm,
When the damage diameter of the laser beam is about 70 μm,
Since no pattern exists in the peripheral portion of the discontinuous adjustment pattern 4 shown in FIG. 4, it is a wasteful space. Further, in this type of thin film resistance element, since the resistor adjustment pattern 6 occupies 70 to 80% of the whole area, reduction of the resistor adjustment pattern 6 is a very important issue. .
したがって本発明は、前述した従来の問題に鑑みてなさ
れたものであり、その目的は、抵抗体調整パターンの占
有面積を最小限に抑えかつ１つのパターンで２種類の増
分を得ることができる薄膜抵抗素子を提供することであ
る。Therefore, the present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to reduce the occupied area of the resistor adjustment pattern to a minimum and obtain two types of increments with one pattern. It is to provide a resistance element.
本発明は、互いに展開長の異なる抵抗値不連続調節パタ
ーンおよび抵抗値非調節パターンを互いにコの字状に２
回以上屈曲する曲折パターンにより形成するものであ
る。According to the present invention, a resistance value discontinuous adjustment pattern and a resistance value non-adjustment pattern having different development lengths are arranged in a U-shape.
It is formed by a bending pattern that bends more than once.
本発明においては、抵抗値不連続調節パターンおよび抵
抗値非調節パターンが曲折パターンで形成されるので、
デッドスペースが小さくなる。In the present invention, since the resistance value discontinuous adjustment pattern and the resistance value non-adjustment pattern are formed in a bent pattern,
Dead space becomes smaller.
以下、図面を用いて本発明の実施例を詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は本発明による薄膜抵抗素子の一実施例を示す要
部平面図であり、前述の図と同一部分には同一符号を付
しその説明は省略する。同図において、抵抗体パターン
の抵抗値測定用端子として用いられる導体パターン2,3
間には、パターンループのほぼ中央部において交互に屈
曲するジグザグ状の曲折パターン4aを有する抵抗値不連
続調節パターン4Aと、同様にパターンループのほぼ中央
部において交互に屈曲するジグザグ状の曲折パターン5a
を有する抵抗値非調節パターン5Aとを並列接続させた抵
抗体調整パターン6Aが多数個連続して直列接続されて形
成されている。この場合、曲折パターン4aが形成された
抵抗値不連続調節パターン4Aと、曲折パターン5aが形成
された抵抗値非調節パターン5Aとは、抵抗体調整パター
ン6Aの中心線Ｃに対して左右の展開長を互いに異る値に
組合されて形成されている。なお、これらの抵抗体調整
パターン6Aは、例えば白金等の金属薄膜をフオトエッチ
ング法などにより加工して形成されており、互いにパタ
ーン幅およびパターン長（抵抗値）がそれぞれほぼ同等
値を有して形成されている。FIG. 1 is a plan view of an essential part showing an embodiment of a thin film resistance element according to the present invention. The same parts as those in the above-mentioned figures are designated by the same reference numerals and the description thereof will be omitted. In the figure, the conductor patterns 2, 3 used as terminals for measuring the resistance value of the resistor pattern
In between, a resistance value discontinuity adjustment pattern 4A having a zigzag-shaped bending pattern 4a that is alternately bent at the substantially central portion of the pattern loop, and a zigzag-shaped bending pattern that is alternately bent at the substantially central portion of the pattern loop. 5a
A plurality of resistor adjustment patterns 6A in which the resistance value non-adjustment patterns 5A having the above are connected in parallel are continuously connected in series. In this case, the resistance value discontinuity adjustment pattern 4A in which the bending pattern 4a is formed and the resistance value non-adjustment pattern 5A in which the bending pattern 5a is formed are developed left and right with respect to the center line C of the resistor adjustment pattern 6A. It is formed by combining lengths with different values. Note that these resistor adjustment patterns 6A are formed by processing a metal thin film such as platinum by a photo-etching method or the like, and the pattern width and the pattern length (resistance value) have substantially the same value. Has been formed.
このように構成された薄膜抵抗素子において、矢印Ａ方
向に切断される抵抗値不連続調節パターン4Aおよび抵抗
値調節を行わない抵抗値非調節パターン5Aは、それぞれ
パターンループが内側方向に凹状に折曲る曲折パターン
4aおよび曲折パターン5aを形成したことにより、パター
ンループ内に無駄なスペースがなくなり、抵抗体調整パ
ターン6Aの全体形状を小さくすることができるとともに
仮にトリミングポイントの開始点が矢印Ａ′のようにず
れたとしても、パターンは確実に何本か切断されてお
り、仮にブリツジ（パターンが完全に切断されず、一部
が非切断部となつて残る部分）が最後のパターンに発生
したとしても抵抗体を切断するという目的は確実に行わ
れる。In the thin-film resistance element thus configured, the resistance value discontinuity adjusting pattern 4A cut in the direction of the arrow A and the resistance value non-adjusting pattern 5A in which the resistance value adjustment is not performed have the pattern loop folded inwardly. Bending pattern
By forming 4a and the bent pattern 5a, there is no wasted space in the pattern loop, the overall shape of the resistor adjustment pattern 6A can be made small, and the starting point of the trimming point is temporarily displaced as shown by arrow A '. Even if it does, some patterns are surely cut, and even if a bridge (a part where the pattern is not completely cut and a part remains as a non-cut part) remains in the last pattern, The purpose of cutting off is certainly done.
第２図は本発明による薄膜抵抗素子の他の実施例を示す
要部平面図であり、前述の図と同一部分には同一符号を
付してある。同図において、第１図と異なる点は、抵抗
値不連続調節パターン4Bおよび抵抗値非調節パターン5B
がそれぞれパターンループのほぼ中央部において交互に
復数回屈曲するジグザグ状の折曲パターン4bおよび5bを
有して抵抗体調整パターン6Bが形成されている。FIG. 2 is a plan view of an essential part showing another embodiment of the thin film resistance element according to the present invention, in which the same parts as those in the above-mentioned figures are designated by the same reference numerals. In this figure, the difference from FIG. 1 is that the resistance value discontinuous adjustment pattern 4B and the resistance value non-adjustment pattern 5B are different.
Has a zigzag-shaped bending patterns 4b and 5b which are alternately bent several times in the substantially central part of the pattern loop to form a resistor adjusting pattern 6B.
このような構成によると、他のパターンに影響を与える
ことなく、矢印Ａ方向にレーザビームを走査してパター
ン内でトリミングを終了することができる。例えば、パ
ターン幅を20μm,レーザビームによるダメージ径を70μ
ｍとしても、同図に一点破線で示す領域の影響を受ける
範囲内には切断されたパターンのみ入つておらず、しか
も無駄なくパターンで埋つており、デツトスペースを少
なくすることができる。With this configuration, the laser beam can be scanned in the direction of arrow A to finish the trimming within the pattern without affecting other patterns. For example, the pattern width is 20 μm and the damage diameter due to the laser beam is 70 μm.
As for m, only the cut pattern is not included in the range affected by the area indicated by the dashed line in the figure, and moreover, the pattern is filled without waste, and the dead space can be reduced.
以上説明したように本発明によれば、抵抗値不連続調節
パターンおよび抵抗値非調節パターンを互いにコの字状
に２回以上屈曲する曲折パターンにより形成したので、
トリミング精度およびレーザのダメージ径により最小の
寸法を決めることができ、目的の増分による無駄なスペ
ースを省くことができるという極めて優れた効果が得ら
れる。As described above, according to the present invention, the resistance value discontinuity adjusting pattern and the resistance value non-adjusting pattern are formed by the bending pattern in which the resistance value discontinuity adjusting pattern is bent twice or more in a U-shape.
The minimum size can be determined according to the trimming accuracy and the laser damage diameter, and an extremely excellent effect that a wasteful space due to the target increment can be omitted is obtained.
第１図は本発明による薄膜抵抗素子の一実施例を示す要
部平面図、第２図は本発明による薄膜抵抗素子の他の実
施例を示す要部平面図、第３図〜第６図は従来の薄膜抵
抗素子を説明する要部平面図である。 １……絶縁性基板、2,3……導体パターン、4A,4B……抵
抗値不連続調節パターン、4a,4b……曲折パターン、5A,
5B……抵抗値非調節パターン、5a,5b……曲折パター
ン、6A,6B……抵抗体調整パターン、７……切断部。FIG. 1 is a plan view of an essential part showing an embodiment of the thin film resistance element according to the present invention, and FIG. 2 is a plan view of an essential part showing another embodiment of the thin film resistance element according to the present invention, FIGS. [FIG. 6] is a plan view of relevant parts for explaining a conventional thin film resistance element. 1 ... Insulating substrate, 2, 3 ... Conductor pattern, 4A, 4B ... Resistance value discontinuity adjustment pattern, 4a, 4b ... Bending pattern, 5A,
5B: resistance value non-adjustment pattern, 5a, 5b ... bending pattern, 6A, 6B ... resistor adjustment pattern, 7 ... cutting part.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 西本 育夫 神奈川県藤沢市川名１丁目12番２号 山武 ハネウエル株式会社藤沢工場内 (56)参考文献 特開 昭55−146909（ＪＰ，Ａ) 特開 昭54−111660（ＪＰ，Ａ) 実開 昭61−146901（ＪＰ，Ｕ) 実開 昭56−36103（ＪＰ，Ｕ) 実開 昭57−193202（ＪＰ，Ｕ) 特公 昭38−23415（ＪＰ，Ｂ１) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Ikuo Nishimoto 1-2-12 Kawana, Fujisawa-shi, Kanagawa Yamatake Honeywell Co., Ltd. Fujisawa factory (56) Reference JP-A-55-146909 (JP, A) JP 54-111660 (JP, A) Actually opened 61-146901 (JP, U) Actually opened 56-36103 (JP, U) Actually opened 57-193202 (JP, U) JP-B 38-23415 (JP , B1)
Claims (1)
調節パターンと抵抗値調節を行わない抵抗値非調節パタ
ーンとを並列接続させてなる抵抗体調節パターンが抵抗
値測定用端子パターン間に複数組直列接続されて絶縁性
基板上に導電性薄膜により配列して形成された薄膜抵抗
素子において、 前記抵抗値不連続調節パターンおよび抵抗値非調節パタ
ーンを互いにコの字状に２回以上屈曲する曲折パターン
により形成することを特徴とした薄膜抵抗素子。1. A resistance value measuring terminal pattern comprising a resistance value discontinuity adjusting pattern in which resistance value adjustment is discontinuous and a resistance value non-adjusting pattern in which resistance value adjustment is not performed are connected in parallel. In a thin film resistance element formed by arranging a plurality of sets in series between them by a conductive thin film on an insulating substrate, the resistance value discontinuity adjusting pattern and the resistance value non-adjusting pattern are formed in a U-shape twice. A thin film resistance element characterized by being formed by a bent pattern which bends as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63054986A JPH0770364B2 (en) | 1987-12-21 | 1988-03-10 | Thin film resistance element |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32154187 | 1987-12-21 | ||
| JP62-321541 | 1987-12-21 | ||
| JP63054986A JPH0770364B2 (en) | 1987-12-21 | 1988-03-10 | Thin film resistance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01251601A JPH01251601A (en) | 1989-10-06 |
| JPH0770364B2 true JPH0770364B2 (en) | 1995-07-31 |
Family
ID=26395816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63054986A Expired - Fee Related JPH0770364B2 (en) | 1987-12-21 | 1988-03-10 | Thin film resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770364B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003007514A (en) * | 2001-06-19 | 2003-01-10 | Murata Mfg Co Ltd | Resistor and liquid level sensor using the same |
| JP5890989B2 (en) * | 2011-09-20 | 2016-03-22 | Koa株式会社 | Thin film resistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55146909A (en) * | 1979-05-02 | 1980-11-15 | Matsushita Electric Industrial Co Ltd | Method of correcting resistance value of resistor |
-
1988
- 1988-03-10 JP JP63054986A patent/JPH0770364B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01251601A (en) | 1989-10-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |