JPH0772260A - High energy beam irradiation position detector - Google Patents

Abstract

(57) [Summary] [Structure] In a high-energy beam irradiation position detection device for detecting the irradiation position on a flat plate heated by high-energy beam irradiation, a base 1 having a flat top surface and a base 1 A support plate 2 made of an insulator provided, a plurality of switch elements 3 and 5 made of BaTiO ₃ arranged on the support plate 2 at equal intervals, and connected in parallel to each switch element 3, 5.
An X-axis resistor 8 and a Y-axis resistor 8'whose resistance values are set so as to sequentially increase or decrease in accordance with the arrangement order of the switch elements 3 and 5, and an X-axis resistor formed by connecting each resistor in series. The axis detection module row 80 and the Y-axis detection module row 80 ', the constant voltage power source 9 connected to one end of each detection module row, and the reference resistors 10 and 10' connected to the other end of each detection module row and grounded. And the reference resistance 1
It is provided with a voltmeter 11, 11 'for detecting a voltage of 0, 10'. [Effect] The irradiation position and spot diameter of the high-energy beam can be measured with high resolution, and the measurement can be repeated without exposing the vacuum chamber to the atmosphere.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-energy beam irradiation position detecting device for detecting a position irradiated with an electron beam or a laser beam, which is used in a vacuum deposition method or the like.

[0002]

2. Description of the Related Art Conventionally, in a vacuum vapor deposition method or the like, an electron beam in which electrons emitted from a hot cathode are accelerated and focused by an electric field and a magnetic field, or a laser beam (hereinafter referred to as a high energy beam) is evaporated in a vacuum chamber. Concentrate on the local
Although the evaporated material is heated and evaporated to form a thin film, it is known that depending on the evaporated material, moving the irradiation position of the high energy beam or changing the spot diameter of the high energy beam results in more stable evaporation. Has been. Therefore, it is necessary to detect the irradiation position and spot diameter of the high-energy beam.The method is to lay an aluminum foil or stainless steel plate in the vacuum chamber and irradiate the high-energy beam to form a hole. , After that, take out aluminum foil or stainless steel plate from the vacuum chamber and measure the position and size of the hole, or apply fluorescent paint to the plate with the coordinates drawn in advance and emit light by irradiating with a high energy beam There was a method of visually observing the position from outside the vacuum chamber.

[0003]

However, the conventional technique has the following problems. (1) In order to measure or replace the holes on the aluminum foil or the stainless steel plate, the vacuum chamber must be exposed to the atmosphere each time, and the irradiation position and spot diameter cannot be measured at the same time when the high energy beam is irradiated. (2) When the irradiation position of a high energy beam is split and the irradiation position of the high energy beam having extremely different intensities is measured, only the irradiation position with the higher intensity can be detected. (3) When a plate coated with fluorescent paint is irradiated with a high-energy beam, the fluorescent paint may evaporate and contaminate the inside of the vacuum chamber, and it is difficult to check the coordinate position from outside the vacuum chamber, which makes measurement accuracy. Is difficult to raise. Therefore, the present invention eliminates the error caused by the observation position, high energy beam irradiation position and spot diameter of the high energy beam repeater without exposing the vacuum chamber to the atmosphere, and a high energy beam irradiation position detector that can be easily measured. It is intended to be provided.

[0004]

In order to solve the above problems, the present invention is a high energy beam irradiation position detecting device for detecting an irradiation position on a flat plate heated by irradiation of a high energy beam, wherein the upper surface is flat. A base, a support plate made of an insulator provided on the base, a plurality of switch elements arranged at equal intervals on the support plate, and having a sharp decrease in electric resistance at a temperature equal to or higher than room temperature, and each switch. A detection module that is connected in parallel to the elements and that has a resistance value whose resistance value is set to sequentially increase or decrease according to the arrangement order of the switching elements, and the detection modules are connected in series. And a resistance measuring means for measuring the total resistance value of the detection module array. In addition, a base having a flat plate-shaped upper surface, a support plate made of an insulator provided on the base, a plurality of support plates arranged at equal intervals on the support plate, and having a sudden decrease in electrical resistance at room temperature or higher. A detection module consisting of a switch element and a resistor connected in series to each switch element, a detection module array formed by connecting the detection modules in parallel via a resistor, and a total voltage value of the detection module array And a voltage measuring means for measuring.

[0005]

By the above means, the switch element made of a material such as semiconducting BaTiO ₃ which has a property that its electric resistance sharply decreases at a temperature higher than room temperature, is open (OFF) at room temperature and exceeds the transition temperature when heated. Since it acts as an electric switch that is closed (ON), the temperature of the switch element below the irradiation point of the high energy beam rises and its resistance value becomes zero. As a result, the resistors connected in parallel with the switch elements irradiated by the high energy beam are short-circuited, and the overall resistance value is reduced accordingly. The resistance value of each resistor connected in parallel to a plurality of switch elements is changed so that the value gradually increases or decreases according to the arrangement order of the switch elements. The resistance value of all resistors changes. Therefore, by obtaining the resistance values of all the resistors for each coordinate axis, the spot diameter can be obtained as the irradiation position of the high energy beam and the spread of the irradiation position.

[0006]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a configuration diagram showing an embodiment of the present invention, and FIG. 2 is a schematic side sectional view of a main part thereof. In the figure, 1 is a base made of a copper block through which cooling water can pass, a support plate 2 made of an insulator is fixed on the base 1, and a width of 1 mm made of semiconductive BaTiO ₃ is fixed on the base 2. Ten strip-shaped switch elements 3 (3a, 3b ... 3i, 3 having a length of 20 mm)
j) are arranged parallel to the Y axis of the orthogonal X and Y axes and at equal intervals in the X axis direction. An insulating film 4 is coated on the switch element 3, and the insulating film 4 is formed on the switch element 3 in parallel with the X axis and Y.
Ten strip-shaped switch elements 5 (5a, 5b ... 5i, 5j), which are the same as the switch elements 3, are arranged at equal intervals in the axial direction. An insulating film 6 is coated on the switch element 5,
Further, a heat resistant conductive film 7 is coated on it. here,
A switch element made of semiconductive BaTiO ₃ will be described. When the switch element is heated, the resistance value changes discontinuously. At room temperature, it has a large resistance value and can be regarded as an insulator, and when it exceeds the transition temperature, the resistance value remarkably decreases and it can be regarded as a conductor. In other words, it is an element that acts as an electric switch that is open (OFF) at room temperature and closed (ON) at heating. As shown in FIG. 3, each of the 10 switch elements 3 (3a, 3b ... 3i, 3j) has an X-axis resistor 8 (8a, 9b ... 8i, 8j).
Are connected in parallel, and each of the switch elements 3 and the corresponding X-axis resistors 8 form ten detection modules 9 (9a, 9b ... 9i, 9j). Further, each detection module 9 is connected in series to form an X-axis detection module row 90. X-axis detection module row 9
The total resistance value of 0 is determined by applying a constant voltage to the X-axis detection module array 90 and measuring the current flowing through the power supply terminal. The current is obtained by measuring the voltage across the reference resistance. The voltage across the reference resistor is the X-axis detection module row 9
One end of 0 is connected to the + side of the constant voltage power source 10 outside the vacuum chamber, and the other end of the X-axis detection module 90 column is grounded via the reference resistor 11 to set the voltage v across the reference resistor 11 The voltmeter 12 is used for measurement. Assuming that the voltage of the constant voltage power source is E and the voltage across the reference resistor 11 is v, the resistance value R _{XT of the} entire X-axis detection module array 90 is R _XT = E · R / v, and the resistance value across the reference resistor 11 is By measuring the voltage v, the resistance value R _{XT of the} entire X-axis detection module array 90 can be obtained. The resistance of the X-axis resistor 8 is 2 ^K times the resistance value R of the reference resistor 11 when the number of the detection modules 9 is n and the arrangement order of the detection modules 9 is the kth (1 ≦ k ≦ n). And the X-axis detection module row 90
X-axis resistors 9a, 8b ... 8i, 8j have resistance values of 2 ¹
R, 2 ² R ... ²⁹ R, ²¹⁰ R. Y
As with the switch element 3, ten Y-axis resistors 8 ′ are connected in parallel with the switch element 5 for the ten switch elements 5 parallel to the axis to form ten detection modules 9 ′. . Further, as a means for connecting the detection modules 9 ′ in series to form a Y-axis detection module row 90 ′ and measuring the total resistance value of the Y-axis detection module row 90 ′,
One end of the Y-axis detection module array 90 is connected to the + side of the constant voltage power source, the other end is grounded through the reference resistor 11 ′, and the resistance value v ′ at both ends of the reference resistor 11 ′ is measured. 'The overall resistance value R _YT is determined. The voltage across the reference resistors 11 and 11 'is measured by the voltmeters 12 and 12', input to the computer 14 via the A / D converter 13, and displayed on the CRT 15 as position information on the screen.

Here, the specific operation of the present invention when the evaporation material on the heat-resistant conductive film 7 is irradiated with a high-energy beam and heated will be described. The high energy beam irradiation position of the heat resistant conductive film 7 is heated, the temperature of the switch elements 3 and 5 under the irradiation point rises, and the resistance value of the switch element is 0.
become. As a result, the resistors connected in parallel with the switch elements irradiated by the high-energy beam are in a short-circuited state, so that the resistance value of the entire X-axis detection module array 90 becomes lower. For example, when only the switching element 3d shown in FIG. 3 is heated, the resistance value of the X-axis resistor 8d connected in parallel to the switching element 3d is reduced by 16R, and the total resistance value R _XT is R _XT = R + 2R + 4R + 8R + 32R + 64R + 128.
R + 256R + 512R + 1024R = 2031R. That is, for example, in Example 1 of Table 1, the total resistance value R _{XT is}
Is 2047R, indicating that no high energy beam is emitted. As in Example 2, the total resistance value R _XT is 2031
In the case of R, only the switching element 3d is irradiated and heated by the high energy beam. When the total resistance value R _XT is 1999R as in Example 3, the switching elements 3d and 3e are used.
It is shown that it was irradiated and heated with a spread of 2 pitches. Further, in the case of 1791R as in Example 4, the switch element 3h is irradiated and in the case of 1023R as in Example 5, the switch element 3j is irradiated and heated.

[0008]

[Table 1]

Thus, the total resistance value R _{XT gives}
The irradiation position of the switch element in the X-axis direction can be uniquely obtained as the X-axis coordinate value of the code (a, b ... I, j) of the detection module 9. On the other hand, the Y-axis coordinate value is uniquely obtained for the irradiated position of the switch element in the Y-axis direction. The position and spread are obtained as two-dimensional X, Y-axis coordinate values from the XY-axis coordinate values of the irradiation position, and the irradiation position and spot diameter of the high energy beam are obtained. For example, when the total resistance values of the X-axis detection module row 90 and the Y-axis detection module row 90 ′ are R _XT = 2031R and R _YT = 1791R as described above, as shown in FIG. =
The irradiation position A of d, Y = h is displayed on the screen. In the above embodiment, the case where the number of X-axis detection modules and the number of Y-axis detection modules are 10 has been described, but the number of detection modules is not limited to 10. Further, the switch elements are not limited to those provided in parallel to the orthogonal X and Y coordinate axes, but one switch element is formed in a radial coordinate axis with the central angle equally divided, and the other switch element is formed in an arc shape. Arrange in the arc direction coordinate axis equally divided in the radial direction, and
You may make it apply to the polar coordinate axis of dimension. In the above embodiment, the strip-shaped switch elements 3 and 5 are arranged in parallel with the X and Y coordinate axes. However, as shown in FIG. 5, the grid patterns are equidistant with respect to each coordinate axis on the plane. A circular or quadrilateral pellet-shaped switch element 30 having a predetermined area is arranged at the upper position to form a detection module 91 including each switch element 30 and a resistor 80 connected in parallel with the switch element 30. Further, for example, 10 arranged in the X-axis direction
One detection module 91 is connected in series, and 1 in the Y-axis direction
Form 0 rows of detection modules 910. Connect the scanner 92 to one end of each detection module row 910,
You may make it connect to the constant voltage power supply 10 in order, and connect the reference resistance 11 to the other end, and measure a voltage with the voltmeter 12. In this case, the scanner 92 sequentially selects the detection module rows 910 arranged in the Y-axis direction one by one, measures the voltage of the reference resistor 11, and detects the irradiation position in the X-axis direction. Further, in the above embodiment, an example in which the total resistance values of the X-axis detection module row and the Y-axis detection module row are obtained from the voltage across the reference resistor has been described.
The measurement of the total resistance value is not limited to the above method, and the total resistance value is obtained from the total voltage across each of the X-axis detection module row and the Y-axis detection module row and the current flowing in each detection module row. Good.

In the above embodiment, in order to increase the detection resolution or increase the detection range, it is necessary to increase the number of detection modules, and the resistance value increases exponentially. Such things can be a problem. That is, assuming that the number of detection modules is 16 and the reference resistance is 100Ω, the resistance values are 200Ω and 400Ω.
It is necessary to prepare 16 kinds of resistors having Ω, 800 Ω, ... 32768 MΩ, 65536 MΩ. Moreover, each resistor must have a resistance value within a range of ± 100Ω, and it is difficult to obtain such a resistor on the high resistance side. Therefore, in such a case, the resolution can be increased without increasing the resistance value exponentially by adopting the following configuration. That is, in FIG. 6, reference numeral 1 is a base made of a copper block through which cooling water can pass, and a support plate 2 made of an insulator is provided on the base 1.
The width of the semiconducting BaTiO ₃ is fixed on the
16 strip-shaped switch elements 3 (3a, 3b ... 3o, 3p) having a length of 0 μm and a length of 20 mm are arranged parallel to the Y axis of the orthogonal X and Y axes and at equal intervals in the X axis direction. I am doing it. The switch element 3 is covered with an insulating film 4, and 16 strip-shaped switch elements 5 (5a, 5a, 5a, 5a, 5a, 5a, 5a, 5a,
b ... 5o, 5p) are arranged. An insulating film 6 is coated on the switch element 5, and a heat resistant conductive film 7 is further formed thereon.
Is coated. 16 switch elements 3 (3a, 3b
, 3o, 3p), as shown in FIG. 8, X-axis resistors 8 (8a, 8b ... 8o, 8p) are connected in parallel,
The 16 detection modules 9 (9a, 9b) are formed by the respective switch elements 3 and the X-axis resistors 8 corresponding thereto.
... 9o, 9p) are formed. Further, one end of each detection module 9 is connected to the resistor 800 (800a, 800b ...
(800o, 800p) are connected in parallel to form an X-axis detection module array 900. For the total voltage of the X-axis detection module row 900, one end of the X-axis detection module row 900 is connected to the + side of the constant voltage power source 10 outside the vacuum chamber, and the other end of the X-axis detection module row 900 is outside the vacuum chamber. It is determined by connecting the non-inverting input of the operational amplifier 130 to the ground via the reference resistor 11 and measuring the output V of the operational amplifier 130 with the voltmeter 12.

Here, the voltage of the constant voltage power source is E, the resistances of the X-axis resistor 8 and the reference resistor 11 of each detection module are 2R,
The resistance of the resistor 800 is R. As for the 16 switch elements 5 parallel to the Y axis, like the switch element 3,
Sixteen Y-axis resistors 8'are connected in parallel with the switch element 5 to form sixteen detection modules 9 '. Furthermore, by connecting one end of each detection module 9'in parallel with the resistor 800 ', the Y-axis detection module array 9
00 'is formed. Y-axis detection module row 900 '
Is connected to the + side of the constant voltage power source, and the other end is connected to the ground via the non-inverting input of the operational amplifier 130 'and the reference resistor 11' to measure the total voltage of the operational amplifier 130 '. It is determined by measuring the output V'with a voltmeter 12 '. The output voltage of the operational amplifier 130, 130 'is measured by the voltmeter 12, 12', and the computer 14
To display on the CRT 15 as position information on the screen.

Here, the specific operation of the present invention when the evaporation material on the heat-resistant conductive film 7 is irradiated with a high energy beam to be heated will be described. The high energy beam irradiation position of the heat resistant conductive film 7 is heated, the temperature of the switch elements 3 and 5 under the irradiation point rises, and the resistance value of the switch element is 0.
become. As a result, the constant voltage E is applied to the resistor connected in series with the switch element irradiated with the high energy beam, so that the voltage of the entire X-axis detection module array 900 increases. For example, the switch element 3 shown in FIG.
When only d is heated, the constant voltage E is applied to the X-axis resistor 8d connected in series with the switch element 3d, and the total voltage E _XT is applied.
Results in E _XT = 4096 / 65536E. Table 2 shows examples of irradiation and heating of other switch elements.

[0013]

[Table 2]

In Example 1, the total voltage E _XT is 0V, which shows a state where no high energy beam is irradiated. As in Example 2,
When the total voltage E _XT is 4096 / 65536E, only the switching element 3d is irradiated and heated by the high energy beam, and when the total voltage E _XT is 6144 / 65536E, the switching elements 3d and 3e are shown. It is shown that it was irradiated and heated with a spread of 2 pitches. Also, as in Example 4,
In case of 256/65536 E, switch element 3h, as in example 5
In the case of 64 / 65536E, it indicates that the switch element 3j is irradiated and heated. In this way, the irradiation position of the switch element in the X-axis direction can be uniquely obtained as the X-axis coordinate value of the code (a, b ... O, p) of the detection module 9 by the total voltage E _XT . On the other hand, the Y-axis coordinate value is uniquely obtained for the irradiated position of the switch element in the Y-axis direction. The position and spread are obtained as two-dimensional X, Y-axis coordinate values from the XY-axis coordinate values of the irradiation position, and the irradiation position and spot diameter of the high energy beam are obtained. For example, the total voltage of the above manner the X-axis detection module rows 900 and Y-axis detection module row 900 'is, E _XT = 4096 / 65536E, in the case of E _YT = 256/65536 E, as shown in FIG. 8 , X by CRT15
The irradiation position A of d, Y = h is displayed on the screen.

In the above embodiment, the case where the number of X-axis and Y-axis detection modules is 16 has been described, but the number of detection modules is not limited to 16. Further, the switch elements are not limited to those provided in parallel to the orthogonal X and Y coordinate axes, but one switch element is formed in a radial coordinate axis with the central angle equally divided, and the other switch element is formed in an arc shape. It may be arranged in a circular coordinate axis that is equally divided in the radial direction and applied to a two-dimensional polar coordinate axis. Further, in the above-described embodiment, the strip-shaped switch elements 3 and 5 are arranged in parallel to the X and Y coordinate axes. However, as shown in FIG. A circular or quadrilateral pellet-shaped switch element 30 having a predetermined area is arranged at the upper position, and a detection module 911 including each switch element 30 and a resistor 800 connected in series to the switch element 30 is formed. One end of the module 911 is connected via the resistor 100. Further, for example, ten detection modules 91 arranged in the X axis direction are connected in series to form ten detection module rows 910 in the Y axis direction. Each detection module row 9
It is also possible to connect the scanner 92 to one end of 10 and measure the total voltage in order by the operational amplifier 131. In this case, the scanner 92 sequentially selects the detection module rows 910 arranged in the Y-axis direction one by one, and connects them to the operational amplifier 131 to measure the total voltage and detect the irradiation position in the X-axis direction.

[0016]

As described above, according to the present invention, the heated position of a plurality of strip-shaped switch elements mounted in the vacuum chamber can be measured by simply measuring the voltage of the reference resistance outside the vacuum chamber. Since it is calculated as a two-dimensional coordinate value and used as the irradiation position and spot diameter of the high-energy beam, the error caused by the observation position is eliminated, and the irradiation position and spot diameter of the high-energy beam can be measured with high resolution and the vacuum chamber There is an effect that it is possible to provide a high energy beam irradiation position detection device that can repeatedly perform measurement without exposing to the atmosphere. Also,
By combining a plurality of strip-shaped switch elements mounted in a vacuum chamber and two types of resistance, the resistance to be used does not increase exponentially and the measurement accuracy of the irradiation position and spot diameter of the high energy beam can be improved. There is an effect that it can be improved.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an embodiment of the present invention.

FIG. 2 is a schematic side sectional view showing a main part of an embodiment of the present invention.

FIG. 3 is a configuration diagram showing a connection between a switch element and an X-axis resistor according to an embodiment of the present invention.

FIG. 4 is an explanatory diagram of screen display according to the embodiment of this invention.

FIG. 5 is an explanatory diagram of a detection module array according to another embodiment of the present invention.

FIG. 6 is a configuration diagram showing another embodiment of the present invention.

FIG. 7 is a configuration diagram showing a connection between a switch element and an X-axis resistor according to another embodiment of the present invention.

FIG. 8 is an explanatory diagram of a screen display according to another embodiment of the present invention.

FIG. 9 is an explanatory diagram of a detection module array according to another embodiment of the present invention.

[Explanation of symbols]

1 base, 2 support plates, 3, 5, 30 switch elements,
4, 6 insulating film, 7 heat resistant conductive film, 8 (8a, 8b ...
8i, 8j, 8k, 8l, 8m, 8n, 8o, 8p)
X-axis resistor, 8'Y-axis resistor, 80, 800, 100
Resistor, 9, 91, 911 Detection module, 90, 9
00 X-axis detection module row, 90 ', 900' Y-axis detection module row, 910 Detection module row, 92
Scanner, 10 constant voltage power supply, 11, 11 'reference resistor, 12, 12' voltmeter, 13 A / D converter, 13
0,130 'operational amplifier, 14 computer, 15
CRT

Claims (8)

[Claims] 1. A high-energy beam irradiation position detecting device for detecting an irradiation position on a flat plate heated by irradiation of a high-energy beam, comprising: a flat base having an upper surface; and an insulator provided on the base. And a plurality of switch elements that are arranged at equal intervals on the support plate and that have a sharp decrease in electrical resistance at room temperature or higher, and are connected in parallel to the respective switch elements, and in the order of arrangement of the switch elements. Therefore, a detection module consisting of a resistor whose resistance value is set to increase or decrease sequentially, and resistance measuring means for measuring the total resistance value of the detection module array formed by connecting the detection modules in series are provided. A high-energy beam irradiation position detection device characterized by being provided. 2. A high energy beam irradiation position detecting device for detecting an irradiation position on a flat plate heated by irradiation of a high energy beam, comprising: a base having a flat upper surface; and an insulator provided on the base. A support plate, a detection module comprising a plurality of switch elements arranged at equal intervals on the support plate, and having a plurality of switch elements whose electrical resistance sharply decreases at a temperature of room temperature or higher, and a resistor connected in series to each of the switch elements; A high-energy beam irradiation position detection device comprising: a detection module array formed by connecting detection modules in parallel via a resistor; and voltage measuring means for measuring a total voltage value of the detection module array. . 3. The high-energy beam irradiation position detecting device according to claim 1, wherein the plurality of switch elements are two-dimensionally arranged at equal intervals on the support plate while being electrically insulated from each other. . 4. A plurality of strip-shaped switch elements, wherein the switch elements are arranged in parallel with the Y axis of orthogonal X and Y axes and arranged at equal intervals in the X axis direction, and switches arranged in the X axis direction. Parallel to the X-axis through an insulating film on the element and Y
The high energy beam irradiation position detection device according to any one of claims 1 to 3, comprising a plurality of strip-shaped switch elements arranged at equal intervals in the axial direction. 5. The high energy beam irradiation position detection device according to claim 1, wherein the plurality of switch elements are formed in a pellet shape and arranged on a grid. 6. When the number of the detection modules is n,
The resistance value of the resistor of the detection module whose arrangement order is k (1 ≦ k ≦ n) is 2 ^k times the resistance value of the resistor of the detection module whose arrangement order is first, 3. The high energy beam irradiation position detection device according to any one of 4 and 5. 7. The resistance value of the resistor of the detection module is twice the resistance value of a resistor provided between the detection modules, according to any one of claims 2, 3, 4 and 5. The high-energy beam irradiation position detection device described. 8. The switch element is semiconductive BaTiO ₃
The high energy beam irradiation position detection device according to any one of claims 1 to 7.