JPH0773841A - Scanning electron microscope and secondary electron detection system - Google Patents
Scanning electron microscope and secondary electron detection systemInfo
- Publication number
- JPH0773841A JPH0773841A JP5219851A JP21985193A JPH0773841A JP H0773841 A JPH0773841 A JP H0773841A JP 5219851 A JP5219851 A JP 5219851A JP 21985193 A JP21985193 A JP 21985193A JP H0773841 A JPH0773841 A JP H0773841A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- pull
- central opening
- sample
- secondary electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】
【目的】 引上電極を備える走査電子顕微鏡で、常に高
い二次電子収率を維持する。
【構成】 一次電子線4を偏向コイル,対物レンズ6を
通して試料7上に集束して照射する。試料7から放出さ
れる二次電子9は、対物レンズ6の磁束に巻きつき、か
つ、下引上電極11aによる電界により螺旋運動をしな
がら上昇する。下引上電極11aから間隔を設けて上引
上電極11bを設置し、両電極11a,11b間に静電
レンズを形成させているので、二次電子9はこの静電レ
ンズで集束され、対物レンズ6の中心開口外壁に衝突し
て失われることなく、常に高い二次電子収率で二次電子
検出器10に捕捉される。
(57) [Abstract] [Purpose] A scanning electron microscope equipped with a pull-up electrode that always maintains a high secondary electron yield. [Structure] A primary electron beam 4 is focused on a sample 7 through a deflection coil and an objective lens 6 and irradiated. The secondary electrons 9 emitted from the sample 7 are wound around the magnetic flux of the objective lens 6 and ascend while spiraling due to the electric field generated by the lower pulling upper electrode 11a. Since the upper pulling upper electrode 11b is provided at a distance from the lower pulling upper electrode 11a and an electrostatic lens is formed between the two electrodes 11a and 11b, the secondary electrons 9 are focused by this electrostatic lens and the objective The secondary electron detector 10 always captures with a high secondary electron yield without colliding with the outer wall of the central opening of the lens 6 and being lost.
Description
【0001】[0001]
【産業上の利用分野】本発明は一次電子を試料に照射し
たときに発生する二次電子を一次電子の入射方向に引き
上げて検出する方式の走査電子顕微鏡に係り、特に、高
分解能,高感度を保持するに好適な走査電子顕微鏡に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning electron microscope of a type in which secondary electrons generated when a sample is irradiated with primary electrons are detected by pulling them up in the incident direction of the primary electrons, and particularly to high resolution and high sensitivity. And a scanning electron microscope suitable for holding.
【0002】[0002]
【従来の技術】図2は、走査電子顕微鏡の二次電子検出
系に用いられる二次電子引上げ部の断面図である。一次
電子を試料7に照射すると、試料7の表面からは、CO
S形状に角度分布した二次電子9が放出される。対物レ
ンズ6の作る対物レンズ磁場が十分に強い領域では、二
次電子9は磁力線に巻きついて上昇し、対物レンズ6の
中心開口を透過して、これより上方に設置した二次電子
検出器(図示せず)に捕捉される。2. Description of the Related Art FIG. 2 is a sectional view of a secondary electron pulling portion used in a secondary electron detection system of a scanning electron microscope. When the sample 7 is irradiated with primary electrons, CO is emitted from the surface of the sample 7.
Secondary electrons 9 angularly distributed in an S shape are emitted. In an area where the objective lens 6 makes a sufficiently strong magnetic field of the objective lens, the secondary electrons 9 are wound around the lines of magnetic force and rise, pass through the central aperture of the objective lens 6, and are placed above the secondary electron detector ( (Not shown).
【0003】ところで、対物レンズ6の磁場強度は、一
次電子の加速電圧の平方根にほぼ比例するため、加速電
圧が1kV程度またはそれ以下に低下した場合には、対
物レンズの磁場強度も低下する。また、試料7を対物レ
ンズ6から離して設置した場合には、試料表面上の対物
レンズ磁場強度は低下する。このため、二次電子9の旋
回半径が大きくなり、二次電子9は対物レンズ6の中心
開口に入射できなくなる。By the way, since the magnetic field strength of the objective lens 6 is almost proportional to the square root of the acceleration voltage of the primary electrons, when the acceleration voltage drops to about 1 kV or lower, the magnetic field strength of the objective lens also drops. Moreover, when the sample 7 is installed away from the objective lens 6, the magnetic field strength of the objective lens on the sample surface is lowered. For this reason, the radius of gyration of the secondary electrons 9 becomes large, and the secondary electrons 9 cannot enter the central aperture of the objective lens 6.
【0004】この問題を回避するため、引上電極11を
対物レンズ6の中心軸開口内に設置し、数100V程度
の正の電圧を印加することにより、引上電極11と試料
7の空間に電場を生成し、試料7の表面で発生した二次
電子9を効率よく上方に引上げ、対物レンズ6の中心開
口に入射させるようになっている(外村:電子顕微鏡技
術、丸善、p.179(1989))。In order to avoid this problem, the pull-up electrode 11 is installed in the central axis opening of the objective lens 6 and a positive voltage of about several hundred volts is applied to the space between the pull-up electrode 11 and the sample 7. An electric field is generated, and the secondary electrons 9 generated on the surface of the sample 7 are efficiently pulled upward and incident on the central aperture of the objective lens 6 (Tonomura: Electron Microscope Technology, Maruzen, p.179). (1989)).
【0005】一方、引上電極11を用いない走査電子顕
微鏡では、例えば特開昭60−130044号公報,特
開平3−230464号公報に記載されているように、
対物レンズの磁場の減衰する領域で二次電子の発散を防
止する補助電磁レンズを設け、二次電子が効率良く二次
電子検出器に到達するようにしている。On the other hand, in a scanning electron microscope which does not use the pull-up electrode 11, as described in, for example, JP-A-60-130044 and JP-A-3-230464,
An auxiliary electromagnetic lens is provided to prevent the secondary electrons from diverging in the region where the magnetic field of the objective lens is attenuated, so that the secondary electrons can efficiently reach the secondary electron detector.
【0006】[0006]
【発明が解決しようとする課題】上述した特開昭60−
130044号公報,特開平3−230464号公報記
載の従来技術は、二次電子を収束させるために電磁レン
ズを設けている。しかし、電磁レンズは一次電子の通過
する中心軸近傍でも収束性が強く、微弱な磁場強度しか
持たない補助電磁レンズでも一次電子への影響をゼロに
することはできないという問題がある。また、電磁レン
ズはコイルを必要とするためその大きさや形状を任意に
設定することができず、特に引上電極を有する走査電子
顕微鏡の様に対物レンズ6の中心開口が狭隘な二次電子
検出系に設置することは困難であり、設計の自由度を狭
めてしまうという問題もある。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
The prior arts described in Japanese Patent No. 130044 and Japanese Patent Application Laid-Open No. 3-230464 have an electromagnetic lens for converging secondary electrons. However, the electromagnetic lens has a strong convergence even in the vicinity of the central axis through which the primary electrons pass, and there is a problem that even an auxiliary electromagnetic lens having only a weak magnetic field strength cannot reduce the influence on the primary electrons to zero. In addition, since the electromagnetic lens requires a coil, its size and shape cannot be arbitrarily set, and in particular, the secondary electron detection in which the central aperture of the objective lens 6 is narrow, as in a scanning electron microscope having a pull-up electrode. It is difficult to install in the system, and there is also a problem that the degree of freedom in design is narrowed.
【0007】本発明の目的は、引上電極を備える走査電
子顕微鏡で常に高い二次電子収率を維持でき、しかも一
次電子に影響の少ない走査電子顕微鏡を提供することに
ある。It is an object of the present invention to provide a scanning electron microscope equipped with a pull-up electrode, which can always maintain a high secondary electron yield and has little influence on primary electrons.
【0008】[0008]
【課題を解決するための手段】上記目的は、一次電子照
射系からの一次電子線を対物レンズ磁場内に装着した試
料に照射し、試料上から発生した二次電子を光軸に沿っ
て引上げる引上電極を有する走査電子顕微鏡において、
引上電極内部の前記対物レンズ磁場及び引上電界が減衰
して二次電子が発散する位置に二次電子を集束する静電
レンズを設けることで、達成される。The above object is to irradiate a primary electron beam from a primary electron irradiation system onto a sample mounted in a magnetic field of an objective lens, and to draw secondary electrons generated from the sample along the optical axis. In a scanning electron microscope with a lifting electrode,
This is achieved by providing an electrostatic lens that focuses the secondary electrons in a position where the magnetic field and the electric field of the objective lens inside the pull-up electrode are attenuated and secondary electrons are diverged.
【0009】[0009]
【作用】静電レンズは電磁レンズと違ってコイルは不要
であり電極板のみで構成できる。このため、対物レンズ
の中心開口のような狭い領域でも任意の形状の静電レン
ズを構成できる。また、静電レンズは、レンズ中心を通
る一次電子にはほとんど影響を与えず、中心から離れる
方向に広がる二次電子のみを集束させる。[Function] Unlike the electromagnetic lens, the electrostatic lens does not need a coil and can be composed of only the electrode plate. Therefore, an electrostatic lens having an arbitrary shape can be formed even in a narrow area such as the central aperture of the objective lens. Further, the electrostatic lens has almost no effect on the primary electrons passing through the center of the lens, and focuses only the secondary electrons spreading in the direction away from the center.
【0010】[0010]
【実施例】以下、本発明の一実施例を図面を参照して説
明する。図4は、本発明の第1実施例に係る二次電子検
出系の構成図である。図3はこの二次電子検出系の収束
作用を説明する図であり、試料7から引上電極11付近
までの対物レンズ6の作る磁束密度分布及び引上電極1
1の作る電位分布を示している。試料7に面する下面に
ギャップを持つタイプの対物レンズ6の磁束密度は、試
料面から対物レンズ6の中心開口の入射部にかけて比較
的強いが、中心開口内部では急速に減衰する。このた
め、中心開口内部で二次電子9は発散し始めることにな
る。従来装置では対物レンズ6の中心開口全体を同一電
位の引上電極11を設置していたため、二次電子9の発
散を防止できなかった。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 4 is a configuration diagram of a secondary electron detection system according to the first embodiment of the present invention. FIG. 3 is a diagram for explaining the converging action of this secondary electron detection system. The magnetic flux density distribution made by the objective lens 6 from the sample 7 to the vicinity of the pulling electrode 11 and the pulling electrode 1 are shown.
The potential distribution created by No. 1 is shown. The magnetic flux density of the objective lens 6 of the type having a gap on the lower surface facing the sample 7 is relatively strong from the sample surface to the incident portion of the central aperture of the objective lens 6, but is rapidly attenuated inside the central aperture. Therefore, the secondary electrons 9 start to diverge inside the central opening. In the conventional device, since the pulling-up electrode 11 having the same potential is installed in the entire center opening of the objective lens 6, it is not possible to prevent the divergence of the secondary electrons 9.
【0011】そこで、本発明では、引上電極11を下引
上電極11aと上引上電極11bに分割して構成し、両
電極11a,11bの隙間から対物レンズ6の接地電位
による電界を浸透させることにより、右端のグラフのよ
うな電位分布を形成する。この浸透電界の存在する領域
は集束レンズとなり、二次電子9は集束する。この集束
レンズの強さは、原理的に二次電子の引上電圧に一致す
るため、引上電極11の電圧に依らずに二次電子9を集
束できる。Therefore, in the present invention, the pulling-up electrode 11 is divided into the lower pulling-up electrode 11a and the upper pulling-up electrode 11b, and the electric field due to the ground potential of the objective lens 6 permeates through the gap between the two electrodes 11a and 11b. By doing so, a potential distribution as shown in the graph at the right end is formed. The region in which this permeation electric field exists becomes a focusing lens, and the secondary electrons 9 are focused. Since the strength of this focusing lens matches the pulling voltage of the secondary electrons in principle, the secondary electrons 9 can be focused without depending on the voltage of the pulling electrode 11.
【0012】以上は、集束レンズとして、単電位型の静
電レンズ(アインツェルレンズ)を用いた例であるが、
バイポテンシャル型の静電レンズを用いることも可能で
ある。The above is an example in which a single potential type electrostatic lens (Einzel lens) is used as the focusing lens.
It is also possible to use a bipotential type electrostatic lens.
【0013】図1は、図4に示す二次電子検出系を適用
した走査電子顕微鏡の全体構成図である。陰極1と第1
陽極2との間に印加した引出電圧V1によって陰極1か
ら引き出された一次電子線4は、陰極1と第二陽極3と
の間に印加された加速電圧Vaccで加速されて後段のレ
ンズ系に進行する。加速された一次電子線4は、レンズ
制御電源16で制御される集束レンズ5及び対物レンズ
6のレンズ作用によって試料7上で微小スポットとして
集束され、走査コイル8a,8bによって試料7上を二
次元的に走査される。走査コイル8a,8bへ供給する
走査信号は、観察倍率に応じて偏向制御回路15により
制御される。対物レンズ6での一次電子線4の開き角は
集束レンズ5の下方に配置した絞り18で決められる。FIG. 1 is an overall configuration diagram of a scanning electron microscope to which the secondary electron detection system shown in FIG. 4 is applied. Cathode 1 and 1
The primary electron beam 4 extracted from the cathode 1 by the extraction voltage V1 applied between the anode 2 and the anode 2 is accelerated by the acceleration voltage Vacc applied between the cathode 1 and the second anode 3 and is transferred to the lens system in the subsequent stage. proceed. The accelerated primary electron beam 4 is focused as a minute spot on the sample 7 by the lens action of the focusing lens 5 and the objective lens 6 controlled by the lens control power supply 16, and the scanning coils 8a and 8b two-dimensionally move on the sample 7. Scanned. The scanning signal supplied to the scanning coils 8a and 8b is controlled by the deflection control circuit 15 according to the observation magnification. The aperture angle of the primary electron beam 4 at the objective lens 6 is determined by a diaphragm 18 arranged below the focusing lens 5.
【0014】一方、対物レンズ6の中心開口内部には、
光軸に沿って、対物レンズ磁場が減衰し二次電子9が発
散し始める領域を挟んで下引上電極11aと上引上電極
11b、更にその上方に接地電極14を配置している。
両引上電極11a,11bには数100V程度の同一電
圧を印加している。試料7から発生した二次電子9は下
引上電極11aによる引上電界によって加速され、対物
レンズ6の磁場により螺旋運動をしながら上昇する。続
いて、二次電子9は両引上電極11a及び11bの間か
ら対物レンズ6の接地電位が中心方向に浸透して生成さ
れる静電レンズにより集束され、接地電極14の中心部
分でもとのエネルギまで減速され、最後に、光軸外に設
置された二次電子検出器10に捕捉され、像表示装置1
6により試料7の拡大像として表示される。On the other hand, inside the central opening of the objective lens 6,
The lower pulling upper electrode 11a and the upper pulling upper electrode 11b are arranged along the optical axis across the region where the magnetic field of the objective lens is attenuated and the secondary electrons 9 start to diverge, and the ground electrode 14 is arranged further above the lower pulling electrode 11a.
The same voltage of about several hundreds of volts is applied to both pull-up electrodes 11a and 11b. The secondary electrons 9 generated from the sample 7 are accelerated by the pulling electric field generated by the lower pulling upper electrode 11a, and rise while making a spiral motion by the magnetic field of the objective lens 6. Subsequently, the secondary electrons 9 are focused by the electrostatic lens generated by the ground potential of the objective lens 6 penetrating in the central direction from between the pulling-up electrodes 11 a and 11 b, and at the central portion of the ground electrode 14. The image display device 1 is decelerated to energy and finally captured by the secondary electron detector 10 installed outside the optical axis.
6 displays an enlarged image of the sample 7.
【0015】本実施例の単電位型の静電レンズでは、加
速された二次電子9のエネルギと集束レンズの強さが比
例するので、引上電極11a,bの電圧に依らず安定し
た集束性が得られるうえ、従来と同じ電源数で足りるの
でコストの増大がほとんど無い特長を持つ。また、極め
て小型の電極構造となり、狭隘な対物レンズ中心開口部
内に設置するのに適する。更に、浸透電界であるから、
光軸上では弱く、周辺で強くなるため、光軸近傍の一次
電子への影響は小さいまま、発散する二次電子のみをを
集束できる。In the single-potential type electrostatic lens of this embodiment, the energy of the accelerated secondary electrons 9 and the strength of the focusing lens are proportional to each other, so that the focusing is stable regardless of the voltage of the pull-up electrodes 11a and 11b. In addition to high performance, the same number of power supplies as before is sufficient, so there is almost no increase in cost. In addition, the electrode structure is extremely small, which is suitable for installation in the narrow aperture of the objective lens. Furthermore, since it is an osmotic electric field,
Since it is weak on the optical axis and strong on the periphery, only divergent secondary electrons can be focused while the influence on the primary electrons near the optical axis is small.
【0016】図5は、本発明の第2実施例に係る二次電
子検出系の構成図である。本実施例では、引上電極11
をロート形状の三重の電極11a,12,11bで構成
する。ここで電極11a,11bは100V程度の同一
電位を印加し、通常、電極12は接地電位とするが、可
変電圧を印加することも可能である。三重の電極11
a,11b,12及び対物レンズ6との間には、やはり
ロート形状の絶縁材を挿入して固定することにより、高
精度の組立が可能である。FIG. 5 is a block diagram of a secondary electron detection system according to the second embodiment of the present invention. In this embodiment, the pull-up electrode 11
Is composed of a triple funnel-shaped electrode 11a, 12, 11b. Here, the electrodes 11a and 11b are applied with the same potential of about 100 V, and the electrode 12 is normally set to the ground potential, but it is also possible to apply a variable voltage. Triple electrode 11
By inserting and fixing a funnel-shaped insulating material between a, 11b, 12 and the objective lens 6, high-precision assembly is possible.
【0017】図6は、本発明の第3実施例に係る二次電
子検出系の構成図である。本実施例では、バイポテンシ
ャル型の静電レンズを用いて二次電子9を集束する。引
上電極を下引上電極11a、上引上電極11b及び下接
地電極12aで構成する。下引上電極11aを対物レン
ズ6の磁極を挟むように設置し、中心部分を除いて下接
地電極12aにより電界を遮蔽する。上引上電極11b
の電圧を調整することにより、二次電子9をほぼ平行ビ
ームにして引き上げることが容易に実現する。FIG. 6 is a block diagram of a secondary electron detection system according to the third embodiment of the present invention. In this embodiment, the secondary electrons 9 are focused by using a bipotential type electrostatic lens. The pulling-up electrode is composed of the lower pulling-up electrode 11a, the upper pulling-up electrode 11b, and the lower ground electrode 12a. The lower pulling upper electrode 11a is installed so as to sandwich the magnetic pole of the objective lens 6, and the electric field is shielded by the lower ground electrode 12a except for the central portion. Upper electrode 11b
By adjusting the voltage of, the secondary electron 9 can be easily made into a substantially parallel beam and pulled up.
【0018】[0018]
【発明の効果】本発明によれば、二次電子を集束する静
電レンズを備えることにより、対物レンズ磁場強度、引
上電極電圧、対物レンズと試料との間隔に依らず、常に
高い二次電子収率維持でき、高感度を実現できる。ま
た、引上電極電圧を任意に設定可能となることから、引
上電極電圧を1kV以上に高電圧化して高分解能化する
こと、あるいは試料の帯電量の制御が可能となる。According to the present invention, by providing the electrostatic lens for focusing the secondary electrons, the secondary lens always has a high secondary intensity regardless of the magnetic field strength of the objective lens, the pulling electrode voltage, and the distance between the objective lens and the sample. The electron yield can be maintained and high sensitivity can be realized. In addition, since the pull-up electrode voltage can be set arbitrarily, it is possible to increase the pull-up electrode voltage to 1 kV or more for high resolution, or to control the charge amount of the sample.
【図1】本発明の第1実施例に係る二次電子検出系を備
える走査電子顕微鏡の全体構成図である。FIG. 1 is an overall configuration diagram of a scanning electron microscope including a secondary electron detection system according to a first embodiment of the present invention.
【図2】従来の二次電子検出系の構成図である。FIG. 2 is a configuration diagram of a conventional secondary electron detection system.
【図3】本発明の第1実施例に係る二次電子検出系の静
電レンズによる集束作用の説明図である。FIG. 3 is an explanatory diagram of a focusing action of the electrostatic lens of the secondary electron detection system according to the first exemplary embodiment of the present invention.
【図4】本発明の第1実施例に係る二次電子検出系の構
成図である。FIG. 4 is a configuration diagram of a secondary electron detection system according to the first embodiment of the present invention.
【図5】本発明の第2実施例に係る二次電子検出系の構
成図である。FIG. 5 is a configuration diagram of a secondary electron detection system according to a second embodiment of the present invention.
【図6】本発明の第3実施例に係る二次電子検出系の構
成図である。FIG. 6 is a configuration diagram of a secondary electron detection system according to a third embodiment of the present invention.
1…陰極、2…第一陽極、3…第二陽極、4…一次電子
線、5…集束レンズ、6…対物レンズ、7…試料、8…
走査コイル、9…二次電子、10…二次電子検出器、1
1…引上電極、11a…下引上電極、11b…上引上電
極、12…中間接地電極、12a…下接地電極、14…
接地電極、15…倍率制御回路、16…レンズ制御回
路、17…像表示装置、18…絞り。1 ... Cathode, 2 ... First anode, 3 ... Second anode, 4 ... Primary electron beam, 5 ... Focusing lens, 6 ... Objective lens, 7 ... Sample, 8 ...
Scanning coil, 9 ... Secondary electron, 10 ... Secondary electron detector, 1
DESCRIPTION OF SYMBOLS 1 ... Pull-up electrode, 11a ... Bottom pull-up electrode, 11b ... Top pull-up electrode, 12 ... Intermediate ground electrode, 12a ... Bottom ground electrode, 14 ...
Ground electrode, 15 ... Magnification control circuit, 16 ... Lens control circuit, 17 ... Image display device, 18 ... Aperture.
Claims (10)
レンズ磁場内に装着した試料に照射し、試料上から発生
した二次電子を光軸に沿って引上げる電界を形成する引
上電極を有する走査電子顕微鏡において、引上電極内部
の前記対物レンズ磁場及び引上電界が減衰して二次電子
が発散しようとする位置に二次電子を収束する静電レン
ズを設けたことを特徴とする走査電子顕微鏡。1. A pull-up electrode that irradiates a primary electron beam from a primary electron irradiation system to a sample mounted in a magnetic field of an objective lens to form an electric field that pulls secondary electrons generated from the sample along the optical axis. In the scanning electron microscope having, an electrostatic lens for converging secondary electrons is provided at a position where the objective lens magnetic field and the pulling electric field inside the pulling electrode are attenuated and secondary electrons are about to diverge. Scanning electron microscope.
の引上電極の該分離箇所から洩れこんだ対物レンズ接地
電位により単電位型の前記静電レンズを構成したことを
特徴とする走査電子顕微鏡。2. The scanning electron according to claim 1, wherein the electrostatic lens of a single potential type is constituted by a ground potential of an objective lens leaking from a pair of upper and lower pulling electrodes separated from each other. microscope.
極により単電位型の静電レンズを構成したことを特徴と
する走査電子顕微鏡。3. A scanning electron microscope according to claim 1, wherein a single potential type electrostatic lens is constituted by triple funnel-shaped electrodes.
の引上げ電極に異なる電圧を印加することによりバイポ
テンシャル型の静電レンズを構成したことを特徴とする
走査電子顕微鏡。4. The scanning electron microscope according to claim 1, wherein a bipotential electrostatic lens is configured by applying different voltages to a pair of upper and lower separated pull-up electrodes.
し集束して試料に照射し、該試料から発生する二次電子
を前記中心開口を通して二次電子検出器で捕捉する走査
電子顕微鏡において、前記中心開口部に二次電子を引上
げる引上電極を設けると共に、該引上電極を二次電子の
引上げ方向に2分割し該分割部分で二次電子を集束させ
る静電レンズを形成させる構成としたことを特徴とする
走査電子顕微鏡。5. A scanning electron microscope in which a primary electron beam is focused through a central opening of an objective lens to irradiate a sample, and secondary electrons generated from the sample are captured by a secondary electron detector through the central opening, A configuration is provided in which a pulling-up electrode that pulls up secondary electrons is provided in the central opening, and the pulling-up electrode is divided into two in the pulling direction of the secondary electrons to form an electrostatic lens that focuses the secondary electrons at the divided portions. A scanning electron microscope characterized in that.
し集束して試料に照射し、該試料から発生する二次電子
を前記中心開口を通して二次電子検出器で捕捉する走査
電子顕微鏡において、前記中心開口部に二次電子を引上
げる引上電極を設けると共に引上げられた二次電子を収
束させる静電レンズを設け、該静電レンズを構成する電
極として前記引上電極を利用する構成としたことを特徴
とする走査電子顕微鏡。6. A scanning electron microscope in which a primary electron beam is focused through a central opening of an objective lens to irradiate a sample, and secondary electrons generated from the sample are captured by a secondary electron detector through the central opening, A configuration is provided in which a pull-up electrode that pulls up secondary electrons is provided in the central opening, an electrostatic lens that converges the pulled secondary electrons is provided, and the pull-up electrode is used as an electrode that constitutes the electrostatic lens. A scanning electron microscope characterized in that
に照射し該試料から発生した二次電子を前記中心開口を
通して取り込む対物レンズと、前記二次電子を前記中心
開口内に引上げる電圧を印加する引上電極と、前記中心
開口を通して取り込んだ二次電子を捕捉する二次電子検
出器とを備える二次電子検出系において、引上電極で前
記中心開口内に引上げられた二次電子の発散する位置に
該二次電子を集束させてから前記二次電子検出器に捕捉
させる静電レンズを設けたことを特徴とする二次電子検
出系。7. An objective lens having a central aperture for focusing primary electrons to irradiate a sample and taking in secondary electrons generated from the sample through the central aperture, and a voltage for pulling the secondary electrons into the central aperture. In a secondary electron detection system including a pull-up electrode for applying a secondary electron and a secondary electron detector for trapping secondary electrons taken in through the central opening, a secondary electron pulled into the central opening by the pull-up electrode. The secondary electron detection system is characterized in that an electrostatic lens is provided at a position where the secondary electrons are converged and then captured by the secondary electron detector.
引上電極を前記中心開口の中心軸に沿った方向に2分割
したときできる隙間から前記対物レンズの接地電位を前
記中心軸方向に浸透させた電界で形成したことを特徴と
する二次電子検出系。8. The electrostatic lens according to claim 7,
Secondary electron detection, characterized in that the pull-up electrode is formed by an electric field in which the ground potential of the objective lens penetrates through the gap formed when the pull-up electrode is divided into two in the direction along the central axis of the central opening. system.
電位型静電レンズあるいはバイポテンシャル型静電レン
ズであることを特徴とする二次電子検出系。9. The secondary electron detection system according to claim 7, wherein the electrostatic lens is a single potential type electrostatic lens or a bipotential type electrostatic lens.
電磁コイルが巻かれた対物レンズと、前記中心開口を通
り収束された一次電子線が試料に照射されたときに該試
料から発生する二次電子線を前記中心開口に引上げる電
界を発生させる引上電極であって前記対物レンズと電気
的に絶縁され且つ前記中心開口に嵌合する引上電極と、
該引上電極と電気的に絶縁され且つ該引上電極に嵌合す
る電極であって前記中心開口内に静電レンズを形成する
静電レンズ用電極とを備えることを特徴とする二次電子
検出系。10. An objective lens in which an electromagnetic coil is wound around a core having a funnel-shaped central opening, and a secondary electron generated from the sample when a primary electron beam converged through the central opening is irradiated to the sample. A pull-up electrode for generating an electric field for pulling an electron beam to the central opening, the pull-up electrode being electrically insulated from the objective lens and fitted in the central opening,
A secondary electron, comprising: an electrode electrically insulated from the pull-up electrode and fitted to the pull-up electrode, the electrode for an electrostatic lens forming an electrostatic lens in the central opening. Detection system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5219851A JPH0773841A (en) | 1993-09-03 | 1993-09-03 | Scanning electron microscope and secondary electron detection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5219851A JPH0773841A (en) | 1993-09-03 | 1993-09-03 | Scanning electron microscope and secondary electron detection system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0773841A true JPH0773841A (en) | 1995-03-17 |
Family
ID=16742061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5219851A Pending JPH0773841A (en) | 1993-09-03 | 1993-09-03 | Scanning electron microscope and secondary electron detection system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0773841A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0762468A1 (en) * | 1995-06-26 | 1997-03-12 | Hitachi, Ltd. | Scanning electron microscope |
| EP0952606A1 (en) * | 1998-04-24 | 1999-10-27 | Advantest Corporation | Dynamically compensated objective lens-detection device and method |
| JP2006080061A (en) * | 2004-09-07 | 2006-03-23 | Kla-Tencor Technologies Corp | Apparatus and method for electron beam dark field imaging |
| JP2007095576A (en) * | 2005-09-29 | 2007-04-12 | Horon:Kk | Charged particle beam device and its focus control method |
| JP2008027737A (en) * | 2006-07-21 | 2008-02-07 | Hitachi High-Technologies Corp | Pattern inspection / measurement equipment |
| JP2009009949A (en) * | 2008-09-01 | 2009-01-15 | Hitachi Ltd | Scanning electron microscope |
| JP4300710B2 (en) * | 1998-09-25 | 2009-07-22 | 株式会社日立製作所 | Scanning electron microscope |
-
1993
- 1993-09-03 JP JP5219851A patent/JPH0773841A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0762468A1 (en) * | 1995-06-26 | 1997-03-12 | Hitachi, Ltd. | Scanning electron microscope |
| EP0952606A1 (en) * | 1998-04-24 | 1999-10-27 | Advantest Corporation | Dynamically compensated objective lens-detection device and method |
| JP4300710B2 (en) * | 1998-09-25 | 2009-07-22 | 株式会社日立製作所 | Scanning electron microscope |
| JP2006080061A (en) * | 2004-09-07 | 2006-03-23 | Kla-Tencor Technologies Corp | Apparatus and method for electron beam dark field imaging |
| JP2007095576A (en) * | 2005-09-29 | 2007-04-12 | Horon:Kk | Charged particle beam device and its focus control method |
| JP2008027737A (en) * | 2006-07-21 | 2008-02-07 | Hitachi High-Technologies Corp | Pattern inspection / measurement equipment |
| JP2009009949A (en) * | 2008-09-01 | 2009-01-15 | Hitachi Ltd | Scanning electron microscope |
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