JPH0774193A - Method for sealing semiconductor device - Google Patents

Method for sealing semiconductor device

Info

Publication number
JPH0774193A
JPH0774193A JP5217110A JP21711093A JPH0774193A JP H0774193 A JPH0774193 A JP H0774193A JP 5217110 A JP5217110 A JP 5217110A JP 21711093 A JP21711093 A JP 21711093A JP H0774193 A JPH0774193 A JP H0774193A
Authority
JP
Japan
Prior art keywords
mold
lead frame
resin
semiconductor element
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5217110A
Other languages
Japanese (ja)
Other versions
JP2939096B2 (en
Inventor
Yuji Yashiro
雄司 八代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5217110A priority Critical patent/JP2939096B2/en
Publication of JPH0774193A publication Critical patent/JPH0774193A/en
Application granted granted Critical
Publication of JP2939096B2 publication Critical patent/JP2939096B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/14Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
    • B29C45/14639Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
    • B29C45/14655Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide a sealing method by which a good moldability and a long life of a die can be achieved by making a thermal resistance between a semiconductor element and the rear face of a mold small and by reducing the content of a filler which causes the abrasion of a die. CONSTITUTION:Flow channels between dies 1, 2 and a lead frame 3 in a mold space are roughly divided into two. Out of the two channels, a first channel having a larger cross sectional area is provided with a flow pressure adjusting member 11 which can move up and down.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、フルモールドタイプの
半導体装置の封止方法に関し、特に放熱面側のモールド
樹脂内に発生するボイド欠陥を未然に阻止しうる半導体
装置の封止方法の改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of encapsulating a full-mold type semiconductor device, and more particularly, to an improvement of a method of encapsulating a semiconductor device which can prevent void defects occurring in the mold resin on the heat dissipation surface side. It is about.

【0002】[0002]

【従来の技術】従来のフルモールドタイプの半導体装置
の製造方法について図3及び図4を用いて説明する。こ
こで図3はリードフレーム完成品の平面図、図4(a)
は封止樹脂が未硬化状態の場合の金型断面図、図4
(b)は封止樹脂が半硬化状態の場合を示している。図
3において半導体素子7はリードフレーム3上にダイボ
ンドされ、更にリードフレーム3のリード端子にボンデ
ィングワイヤー8により電気的に接続される。リードフ
レーム3は上面モールド金型1及び下面モールド金型2
にセットされトランスファーモールド法により成型され
る。
2. Description of the Related Art A conventional method for manufacturing a full-mold type semiconductor device will be described with reference to FIGS. Here, FIG. 3 is a plan view of the finished lead frame, FIG.
Is a sectional view of the mold when the sealing resin is in an uncured state, FIG.
(B) shows the case where the sealing resin is in a semi-cured state. In FIG. 3, the semiconductor element 7 is die-bonded onto the lead frame 3, and further electrically connected to the lead terminal of the lead frame 3 by the bonding wire 8. The lead frame 3 includes an upper surface molding die 1 and a lower surface molding die 2.
And is molded by the transfer molding method.

【0003】可動ピン4、5は液状の熱硬化性樹脂9が
樹脂注入口6より流入しモールド空間内に充填される状
態では図4(a)に示す様にリードフレーム3を支持
し、樹脂が半硬化状態では図4(b)に示す様に上面又
は下面モールド金型1,2表面まで移動し、樹脂硬化状
態では成型品と金型の離型時に成型品を取り出すエジェ
クトピンとして作用する。
The movable pins 4 and 5 support the lead frame 3 as shown in FIG. 4A when the liquid thermosetting resin 9 flows from the resin injection port 6 and is filled in the mold space. In the semi-cured state, as shown in FIG. 4 (b), it moves to the upper or lower mold dies 1 and 2 surface, and in the resin cured state, it acts as an eject pin to take out the molded product when the molded product is separated from the mold. .

【0004】[0004]

【発明が解決しようとする課題】フルモールドタイプの
半導体装置においては、半導体素子7よりの発熱を外部
に速やかに放熱する為、放熱面下部の樹脂厚d1を出来
るだけ薄くする必要があった。樹脂厚を薄くすると図4
(a)に示すd1/d2の比が非常に小さくなりリード
フレーム3に対してリードフレーム上部の流路を流れる
樹脂aと下部の流路を流れる樹脂bとの間に大きな流圧
差を生じ、その結果モールド樹脂内にボイド欠陥10が
発生し製品に外観不良が生じた。
In the full-mold type semiconductor device, the resin thickness d1 under the heat radiation surface must be made as thin as possible in order to quickly radiate the heat generated by the semiconductor element 7 to the outside. If the resin thickness is reduced,
The ratio of d1 / d2 shown in (a) becomes very small, and a large fluid pressure difference occurs between the resin a flowing through the flow path above the lead frame and the resin b flowing through the flow path below the lead frame 3, As a result, void defects 10 were generated in the mold resin, and the product had a poor appearance.

【0005】このボイド欠陥10の発生を防ぐ為に肉厚
の薄い樹脂部分d1を厚くすることが考えられるが、こ
れは半導体素子7と放熱板に接するモールド樹脂裏面間
の熱抵抗が大きくなり放熱効果が低下し適切でない。
In order to prevent the occurrence of the void defect 10, it is conceivable to thicken the thin resin portion d1. However, this increases the thermal resistance between the semiconductor element 7 and the back surface of the mold resin in contact with the heat radiating plate, so that the heat radiation is prevented. The effect decreases and is not appropriate.

【0006】また、熱抵抗を小さくするには樹脂自体の
熱伝導率を上げれば良く、熱伝導率を上げるには樹脂中
のフィラーの含有量を増加させる必要がある。しかし、
フィラーの含有量を増加させると金型の摩耗が激しくな
り、その結果金型更新期間が短縮され金型費のコストア
ップにつながるという欠点があった。
Further, in order to reduce the thermal resistance, it is sufficient to increase the thermal conductivity of the resin itself, and in order to increase the thermal conductivity, it is necessary to increase the content of the filler in the resin. But,
When the content of the filler is increased, the die wear becomes severe, resulting in a shortened die renewal period and an increase in die cost.

【0007】[0007]

【課題を解決するための手段】本発明は、上記問題点に
鑑み、モールド空間内のリードフレーム3を境界にして
流路面積を広く形成した第1流路に上下動可能な流圧調
整部材11を設け、第1流路と第2流路の流圧をほぼ等
しくしたことを特徴とする。
SUMMARY OF THE INVENTION In view of the above problems, the present invention provides a fluid pressure adjusting member that can move up and down in a first flow path having a wide flow path area with a lead frame 3 in a mold space as a boundary. 11 is provided to make the flow pressures of the first flow passage and the second flow passage substantially equal.

【0008】[0008]

【作用】流圧調整部材を設け、第1流路と第2流路の流
圧をほぼ等しくした結果、液状絶縁樹脂が第1流路と第
2流路において、ほぼ均等の速度で流れる為、ボイド欠
陥の発生がなく良好な半導体装置の封止方法を提供でき
る。
As a result of providing the flow pressure adjusting member and making the flow pressures of the first flow path and the second flow path substantially equal, the liquid insulating resin flows at substantially the same speed in the first flow path and the second flow path. It is possible to provide a good method for sealing a semiconductor device without the occurrence of void defects.

【0009】[0009]

【実施例】本発明の一実施例を図面に従って説明する。
図1(a)は、本発明のフルモールドタイプで封止樹脂
が未硬化状態の金型断面図、図1(b)は、同フルモー
ルドタイプで封止樹脂が半硬化状態の金型断面図、図2
は、本発明の封止方法により得られた成型品の平面図を
示している。
An embodiment of the present invention will be described with reference to the drawings.
FIG. 1 (a) is a mold cross-sectional view of a full mold type of the present invention in which an encapsulating resin is uncured, and FIG. 1 (b) is a mold cross section of the same full mold type in which an encapsulating resin is semi-cured. Figure, Figure 2
[Fig. 3] shows a plan view of a molded product obtained by the sealing method of the present invention.

【0010】図1(a)において、半導体素子7はリー
ドフレーム3にダイボンドされリードフレーム3と半導
体素子7は、ボンディングワイヤー8により電気的に接
続され回路形成されている。リードフレーム3は、下面
モールド金型2にセットされ次に、プレス機によって上
面モールド金型1を降下させ液状の熱硬化性樹脂9を樹
脂注入口6より注入しトランスファーモールド法によっ
て成型する。尚、モールド時、可動ピン4,5は従来技
術と同様の働きを行う。
In FIG. 1A, the semiconductor element 7 is die-bonded to the lead frame 3, and the lead frame 3 and the semiconductor element 7 are electrically connected by a bonding wire 8 to form a circuit. The lead frame 3 is set on the lower surface molding die 2, and then the upper surface molding die 1 is lowered by a pressing machine to inject a liquid thermosetting resin 9 from a resin injection port 6 to form by a transfer molding method. During molding, the movable pins 4 and 5 perform the same function as in the prior art.

【0011】本発明のポイントである流圧調整部材11
は樹脂注入時、d1=d3の位置に設定しリードフレー
ム上部の流路断面積と下部の流路断面積を等しくするこ
とにより液状の熱硬化性樹脂9のリードフレーム3より
上部と下部の流速をほぼ均等にすることが出来る。従っ
て、従来の方法において発生したようなリードフレーム
下部のボイド欠陥を防止することが出来る。
The flow pressure adjusting member 11 which is the point of the present invention
Is set at the position of d1 = d3 at the time of resin injection so that the flow path cross-sectional area of the upper part of the lead frame is equal to the flow path cross-sectional area of the lower part of the lead frame. Can be made almost even. Therefore, it is possible to prevent a void defect in the lower portion of the lead frame which occurs in the conventional method.

【0012】また、放熱板下部の樹脂厚d1を更に薄く
することにより従来と同等の熱抵抗を保ちながら、フィ
ラーの含有量を少なくすることが出来、金型の長寿命化
が実現出来る。
Further, by further reducing the resin thickness d1 under the heat sink, the filler content can be reduced while maintaining the same thermal resistance as the conventional one, and the life of the mold can be extended.

【0013】図1(b)に示すように流圧調整部材11
は、液状の熱硬化性樹脂9の注入が終了した時点で成型
品の表面まで持ち上げられ流圧調整部材11の空間は更
に樹脂により充填され、樹脂が完全に硬化した時点で金
型より成型品を取り出す機能として作用し、リードフレ
ーム3をリード端子部を除き完全に樹脂封止した半導体
装置が完成する。
As shown in FIG. 1B, the fluid pressure adjusting member 11
Is lifted to the surface of the molded product when the injection of the liquid thermosetting resin 9 is completed, and the space of the flow pressure adjusting member 11 is further filled with the resin, and when the resin is completely cured, the molded product is molded. And the lead frame 3 is completely resin-sealed except for the lead terminals to complete a semiconductor device.

【0014】また、流圧調整部材11の成型品での判別
方法は、樹脂注入終了時に、流圧調整部材11が成型品
表面まで上昇する時、流圧調整部材11の位置が成型品
表面より数十ミクロン下がった位置で停止する為、成型
品の形状としては図2に示すように成型品表面に数十ミ
クロンの凹部12が出来ることから判別出来る。
Further, the method for discriminating the flow pressure adjusting member 11 on the molded product is that the position of the flow pressure adjusting member 11 is above the surface of the molded product when the fluid pressure adjusting member 11 rises to the surface of the molded product at the end of the resin injection. Since it stops at a position lowered by several tens of microns, the shape of the molded product can be identified from the fact that a recess 12 of several tens of microns is formed on the surface of the molded product as shown in FIG.

【0015】この凹部をつける理由は、成型品の実装時
成型品を放熱板にビスとワッシャーで取り付ける際、凸
部になるとワッシャーの浮きが発生し問題を生じるとい
うことからである。
The reason for forming the concave portion is that when the molded product is mounted on the heat dissipation plate with screws and washers when the molded product is mounted, a convex portion causes floating of the washer, which causes a problem.

【0016】[0016]

【発明の効果】以上説明したように本発明によればモー
ルド空間内の金型とリードフレーム間の大きく分けて2
つの流路の内、流路断面積の大きい第1流路に上下動可
能な流圧調整部材を設けることにより、半導体素子−モ
ールド樹脂裏面間の熱抵抗を小さくし、金型摩耗の原因
となるフィラー含有量を少なくすることが出来、成型性
の良好な金型寿命の長い封止方法を提供出来る効果があ
る。
As described above, according to the present invention, the mold and the lead frame in the mold space are roughly divided into two parts.
By providing a vertically movable fluid pressure adjusting member in the first flow passage having a large flow passage cross-sectional area among the two flow passages, the thermal resistance between the semiconductor element and the back surface of the mold resin is reduced, and the cause of die wear is considered. It is possible to reduce the content of the filler, and it is possible to provide a molding method with good moldability and long mold life.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のフルモールドタイプの金型断面図で、
図(a)は樹脂注入時の図であり、図(b)は樹脂注入
後から硬化状態までの図である。
FIG. 1 is a cross-sectional view of a full-mold type mold of the present invention,
FIG. 7A is a diagram at the time of resin injection, and FIG. 9B is a diagram from the resin injection to the cured state.

【図2】本発明の成型品の平面図である。FIG. 2 is a plan view of a molded product of the present invention.

【図3】従来品のリードフレーム完成品を示す図であ
る。
FIG. 3 is a diagram showing a conventional lead frame finished product.

【図4】従来方式のフルモールドタイプの金型断面図
で、図(a)は樹脂が未硬化状態の図であり、図(b)
は樹脂が半硬化状態の図である。
FIG. 4 is a cross-sectional view of a conventional full-mold type mold, in which FIG. 4A is a diagram in which the resin is in an uncured state, and FIG.
Is a diagram of the resin in a semi-cured state.

【符号の説明】[Explanation of symbols]

1 上面モールド金型 2 下面モールド金型 3 リードフレーム 4,5 可動ピン 6 樹脂注入口 7 半導体素子 8 ボンディングワイヤー 9 熱硬化性樹脂 10 ボイド欠陥 11 流圧調整部材 12 成型品表面の凹部 1 Upper surface mold die 2 Lower surface mold die 3 Lead frame 4,5 Movable pin 6 Resin injection port 7 Semiconductor element 8 Bonding wire 9 Thermosetting resin 10 Void defect 11 Flow pressure adjusting member 12 Recessed part of molded product surface

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体素子とこの半導体素子を載置する
リードフレームと、これらを電気的に接続するボンディ
ングワイヤー部を備え、前記半導体素子とリードフレー
ムをモールド空間内に配置し、このモールド空間内に流
体絶縁樹脂を注入硬化する半導体装置の封止方法におい
て、 流体絶縁樹脂注入時、前記流体絶縁樹脂の流路となるモ
ールド空間内のリードフレームの上部に流路面積が広い
第1流路と下部に流路面積が狭い第2流路を形成すると
共に、前記第1流路に上下動可能な流圧調整部材を設
け、第1流路の流圧と第2流路の流圧をほぼ等しくして
なることを特徴とする半導体装置の封止方法。
1. A semiconductor element, a lead frame on which the semiconductor element is mounted, and a bonding wire portion for electrically connecting the semiconductor element and the semiconductor element and the lead frame are arranged in a mold space. In a method of sealing a semiconductor device, in which a fluid insulating resin is injected and cured into a mold, a first flow channel having a wide flow channel area is provided above a lead frame in a mold space which is a flow channel of the fluid insulating resin when the fluid insulating resin is injected. A second flow passage having a narrow flow passage area is formed in the lower portion, and a vertically movable fluid pressure adjusting member is provided in the first fluid passage so that the fluid pressure of the first fluid passage and the fluid pressure of the second fluid passage are substantially equalized. A method of encapsulating a semiconductor device, wherein the method is the same.
JP5217110A 1993-09-01 1993-09-01 Semiconductor device sealing method Expired - Fee Related JP2939096B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5217110A JP2939096B2 (en) 1993-09-01 1993-09-01 Semiconductor device sealing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5217110A JP2939096B2 (en) 1993-09-01 1993-09-01 Semiconductor device sealing method

Publications (2)

Publication Number Publication Date
JPH0774193A true JPH0774193A (en) 1995-03-17
JP2939096B2 JP2939096B2 (en) 1999-08-25

Family

ID=16699010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5217110A Expired - Fee Related JP2939096B2 (en) 1993-09-01 1993-09-01 Semiconductor device sealing method

Country Status (1)

Country Link
JP (1) JP2939096B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015031663A (en) * 2013-08-06 2015-02-16 株式会社デンソー Rotation detecting device and manufacturing method thereof
JP2017537821A (en) * 2014-12-15 2017-12-21 ベシ ネーデルランズ ビー.ヴイ.Besi Netherlands B.V. Mold, molding apparatus and method for overmold control of carrier having electronic component, and molded product

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015031663A (en) * 2013-08-06 2015-02-16 株式会社デンソー Rotation detecting device and manufacturing method thereof
JP2017537821A (en) * 2014-12-15 2017-12-21 ベシ ネーデルランズ ビー.ヴイ.Besi Netherlands B.V. Mold, molding apparatus and method for overmold control of carrier having electronic component, and molded product

Also Published As

Publication number Publication date
JP2939096B2 (en) 1999-08-25

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