JPH0775829B2 - Precision polishing method - Google Patents
Precision polishing methodInfo
- Publication number
- JPH0775829B2 JPH0775829B2 JP60230167A JP23016785A JPH0775829B2 JP H0775829 B2 JPH0775829 B2 JP H0775829B2 JP 60230167 A JP60230167 A JP 60230167A JP 23016785 A JP23016785 A JP 23016785A JP H0775829 B2 JPH0775829 B2 JP H0775829B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polisher
- electrode plate
- workpiece
- polishing method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title claims description 77
- 238000000034 method Methods 0.000 title claims description 22
- 239000000463 material Substances 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 8
- 238000001962 electrophoresis Methods 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 description 18
- 239000006061 abrasive grain Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000002649 leather substitute Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000005304 optical glass Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、Siウエハー，結晶フェライト，光学ガラス等
の硬脆性材料の精密研磨方法に関するものである。TECHNICAL FIELD The present invention relates to a precision polishing method for hard and brittle materials such as Si wafer, crystalline ferrite, and optical glass.
従来の技術 従来、硬脆性材料の加工には、ダイヤモンド砥石等によ
る研削加工、SiC,Al2O3等の遊離砥粒を用い鋳鉄等のラ
ップによるラッピングの加工法がとられ、さらに研磨法
としては、ポリシャとして、Cu,Sn等の軟質金属，人工
皮革，ポリウレタン，ピッチなどを用いたポリシングが
行なわれている。Conventional technology Conventionally, hard brittle materials are processed by grinding with a diamond grindstone, lapping by wrapping cast iron with free abrasive grains such as SiC, Al 2 O 3, etc. As a polisher, polishing is performed using a soft metal such as Cu or Sn, artificial leather, polyurethane, or pitch.
しかしながら、前記、研磨加工，ラッピングはいずれも
大きな応力場により材料内に先在する転移やクラックの
活性化を伴なった破壊による加工，塑性変形に基づく加
工であるため、塑性変形の現像精度が仕上面精度とな
る。したがって、脆性破砕により形成された表面下に、
マイクロクラック等の加工影響層が大きく残留する。However, since the polishing processing and lapping are both processing by fracture accompanied by activation of transitions and cracks existing in the material due to a large stress field, and processing based on plastic deformation, the development accuracy of plastic deformation is high. Finished surface accuracy. Therefore, under the surface formed by brittle fracture,
The processing-affected layer such as microcracks remains largely.
又、前記ポリシングに於ては、前記脆性破砕が規模のか
なり小さい状態で生じたり、あるいは熱等による塑性流
動現象となる。このため、被加工物表層は変質層とな
り、残留応力もかなり大となる。Further, in the polishing, the brittle fracture occurs in a state where the scale is considerably small, or a plastic flow phenomenon due to heat or the like occurs. Therefore, the surface layer of the workpiece becomes an altered layer, and the residual stress becomes considerably large.
電子部品材料あるいは、高精度光学部品に於ては、材料
そのものの持つ性質を変えることなく研磨を行なうこ
と、又、高精度の形状を確保すること等が必要であり、
これを実現する加工法として以前から種々の精度研磨法
が提案され、一部実用化されているものもある。しか
し、非接触研磨法と称されるこれらの研磨法は、非接触
故に研磨速度が著しく遅く特殊の用途に限られて使用さ
れているのが現状である。この低加工性の向上を図るべ
く電磁場を援用した研磨法が提案された。In the case of electronic parts materials or high-precision optical parts, it is necessary to carry out polishing without changing the properties of the material itself, and to secure a highly accurate shape.
As a processing method for achieving this, various precision polishing methods have been proposed and some of them have been put into practical use. However, these polishing methods, which are called non-contact polishing methods, have a very low polishing rate because of non-contact and are currently used only for special purposes. In order to improve this low workability, a polishing method using an electromagnetic field has been proposed.
微粉砥粒を液中に懸濁させると、両者の誘電率の差に基
づいて粒子は自然に帯電する。この研磨液に電極を挿入
し電圧を印加すると、粒子は帯電状態に応じて電極方向
に移動する。すなわち、粒子は電気泳動する。本現像を
援用した精密研磨法の検討が行われた（黒部・今中ほ
か、昭和56年度精機学会春季大会学術講演会論文集、P7
77）。研磨装置として第４図および第５図に示す２通り
の方法が開発され、それぞれ装置I,装置IIと呼称されて
いる。When the fine abrasive grains are suspended in the liquid, the particles are naturally charged due to the difference in their dielectric constants. When an electrode is inserted into this polishing liquid and a voltage is applied, the particles move in the direction of the electrode according to the charged state. That is, the particles electrophorese. A precise polishing method with the aid of main development was studied (Kurobe, Imanaka et al., Proc. Of the Seiki Society Spring Conference, 1976, Proc.
77). Two methods shown in FIGS. 4 and 5 have been developed as a polishing apparatus, which are called apparatus I and apparatus II, respectively.
第４図に示す装置Ｉにおいて、１は加工液、２は下部回
転軸2aに支持されて回転するポリシャ、３は被加工物、
４はブラシ、５は上部回転軸5aに指示されて回転する被
加工物ホルダ、６は研磨槽である。この装置Ｉは、被研
磨材を貼布した上部回転軸と対向電極をなす下部回転軸
を研磨槽中に浸漬してそれらを相対運動させて研磨を行
う形式であり、電気泳動により砥粒を被加工物側に集中
させて研磨を行うものである。In the apparatus I shown in FIG. 4, 1 is a working fluid, 2 is a polisher which is supported by a lower rotary shaft 2a and rotates, 3 is a workpiece,
Reference numeral 4 is a brush, 5 is a workpiece holder that is rotated by being directed by the upper rotary shaft 5a, and 6 is a polishing tank. This apparatus I is of a type in which an upper rotary shaft on which a material to be polished is pasted and a lower rotary shaft forming a counter electrode are immersed in a polishing tank to make them move relative to each other to perform polishing. The polishing is performed by concentrating it on the side of the workpiece.
第５図に示す装置IIにおいて、5cは被加工物ホルダ、７
は電極である。この装置IIは、加工物と電極を別個に独
立させて液中に設定しており、研磨槽の大きさに応じて
幾つもの加工物を液中に浸漬できる特徴を有している。In the apparatus II shown in FIG. 5, 5c is a workpiece holder, 7
Is an electrode. In this apparatus II, the workpiece and the electrode are separately and independently set in the liquid, and the feature is that several workpieces can be immersed in the liquid depending on the size of the polishing tank.
発明が解決しようとする問題点 しかしながら上記のような研磨装置では、以下に示す問
題点がある。Problems to be Solved by the Invention However, the above polishing apparatus has the following problems.
装置Ｉおよび装置IIの場合、被加工物と対向電極である
ポリシャ２との間隙を均一にしかも適切な間隔で保つ必
要があり、もしも間隙が勾配を有していると研磨状態も
不均一なものとなるため、本研磨法は必然的に高精度な
高価な機械を必要とする。また装置Ｉと装置IIは、共に
在来の非接触研磨法より加工速度は向上したとはいえ、
接触研磨法に比べるとかなり遅く、量産性の観点からは
依然問題を内包しているといえる。また、研磨原理から
みて本研磨法は平面研磨に限定されるという側面を有し
ている。電子部品材料やレンズ等の光学部品材料などの
量産部品には曲面を有するものが多く、それらの部材に
対しては本研磨法はあまり効果がないように思われる。In the case of the device I and the device II, it is necessary to keep the gap between the work piece and the polisher 2 as the counter electrode uniform and at an appropriate gap. If the gap has a gradient, the polishing state is not uniform. Therefore, the present polishing method necessarily requires a highly accurate and expensive machine. Further, although both the device I and the device II are improved in processing speed as compared with the conventional non-contact polishing method,
It is much slower than the contact polishing method, and it can be said that the problem still remains from the viewpoint of mass productivity. Further, in view of the polishing principle, this polishing method has a side face that it is limited to flat polishing. Many mass-produced parts such as electronic part materials and optical part materials such as lenses have curved surfaces, and it seems that the present polishing method is not very effective for those members.
問題点を解決するための手段 上記問題点を解消するために本発明の精密研磨方法は、
電極盤表層に軟質の多孔質材料あるいは微細毛質材料を
設けたポリシャと、このポリシャ上に所定の低面圧力で
押し付けられ相対運動する被加工物とを研磨剤を液体に
懸濁した研磨液中に配置し、さらに、この研磨液中に上
記電極盤に対向させて電極板を設け、電場の影響下に於
て、研磨液中の研磨剤を前記ポリシャ表層に電気泳動に
より引き付け集中させるとともに保持させ、被加工物表
面に作用させるものである。Means for Solving Problems The precision polishing method of the present invention in order to solve the above problems,
A polishing liquid in which an abrasive is suspended in a liquid, and a polisher provided with a soft porous material or a fine hair material on the surface of the electrode board and a workpiece to be relatively moved by being pressed on the polisher at a predetermined low surface pressure. In the polishing liquid, an electrode plate is provided so as to face the electrode plate, and under the influence of an electric field, the polishing agent in the polishing liquid is attracted to and concentrated on the polisher surface layer by electrophoresis. It is held and made to act on the surface of the workpiece.
作用 ポリシャを表層に設けた電極盤と、被加工物を設置して
いる周辺の研磨液中に上記電極盤と対向させて電極板を
設け、これらの両電極間に電圧を印加することから電場
の影響下で、研磨液中の微粒研磨剤が、ポリシャ表面に
電気泳動現象により集中し、保持され、この状態で被加
工物が設置され所定の低面圧力で押し付けられている部
分へ送り込まれ、被加工物に作用し研磨が進行すること
から、非接触研磨法の利点を失うことなく、しかも極め
て高速で加工出来、量産性を向上するとともに良好な研
磨仕上げ面を効率良く実現できる。Action The electrode plate with the polisher on the surface and the electrode plate in the polishing liquid around the workpiece where the electrode plate is opposed to the electrode plate, and a voltage is applied between these electrodes Under the influence of, the fine-grained abrasive in the polishing liquid is concentrated and held by the electrophoretic phenomenon on the polisher surface, and in this state, the work piece is installed and sent to the portion pressed with a predetermined low surface pressure. Since it acts on the object to be processed and polishing progresses, the advantages of the non-contact polishing method are not lost, and processing can be performed at extremely high speed, mass productivity is improved and a good polished finished surface can be efficiently realized.
実 施 例 以下本発明の一実施例について、図面を参照しながら説
明する。第１図は、本発明の加工原理を示す模式図であ
る。８は被加工物、９は軟質微細毛質材料、10は電極盤
であり、電極盤10と軟質微細毛質材料９はポリシャを構
成する。また、11は微粒研磨剤、12は電極板、13は研磨
液である。ここでポリシャ側を陽極とし、電極板12との
間に直流電圧を印加し、電場を与える。これにより、微
粒研磨剤に電気泳動を生じさせ、軟質微細毛質材料９の
表面に微粒研磨剤を引き付け保持させた状態にし、被加
工物８に作用させ、研磨を行なう。この時、被加工物８
は軟質微細毛質材料９に極低荷重で押し付けられる。Example An example of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing the processing principle of the present invention. Reference numeral 8 is a workpiece, 9 is a soft fine hair material, 10 is an electrode plate, and the electrode plate 10 and the soft fine hair material 9 constitute a polisher. Further, 11 is a fine-grained abrasive, 12 is an electrode plate, and 13 is a polishing liquid. Here, the polisher side is used as an anode, and a DC voltage is applied between the polisher side and the electrode plate 12 to give an electric field. As a result, electrophoresis is generated in the fine abrasive, and the fine abrasive is attracted to and held on the surface of the soft fine hair material 9, and is caused to act on the workpiece 8 for polishing. At this time, the workpiece 8
Is pressed against the soft fine hair material 9 with an extremely low load.
第２図は、本発明の精密研磨法を行なう研磨装置の一実
施例である。第２図において８は、Si単結晶，光学ガラ
ス等の被加工物、14はその貼り付けホルダーであり、15
は貼り付けホルダー14を支持し貼り付けホルダー14に装
着されて回転する軸受部材で、この軸受部材15に対し貼
り付けホルダー14は軸方向に自由に摺動可能である。こ
の軸受部材15は、駆動モーター16により、ベルト17を介
して10rpm〜500rpmで回転する。18は回転テーブルであ
り、駆動モーター19によりベルト20を介して10〜500rpm
で回転する。21は白金，ステンレス等の電離等を起こし
にくい材料の電極盤である。この電極盤21と回転テーブ
ル18とは、非導電性フィルム22を介して絶縁されてい
る。電極盤21の表層には軟質微細毛質人工皮革23を設け
た。なお、軟質微細毛質人工皮革23のかわりに、軟質の
多孔質材料である発泡ポリウレタンシートを用いること
もできる。研磨液24は、Al2O3,CeO2等の0.1μｍ程度の
研磨剤をアルコールあるいは水に懸濁して用いた。25は
電極盤21との間に電場を形成するための電極である。26
はブラシ、27は電圧計、28は電流計であり、０〜500Vを
印加する。但し、29は研磨機本体ベースであり、30は被
加工物に所定の押し付け荷重を与える重りである。FIG. 2 shows an embodiment of a polishing apparatus for carrying out the precision polishing method of the present invention. In FIG. 2, 8 is a work piece such as Si single crystal or optical glass, 14 is a holder for attaching the work piece, 15
Is a bearing member that supports the sticking holder 14 and is attached to the sticking holder 14 to rotate. The sticking holder 14 is freely slidable in the axial direction with respect to the bearing member 15. The bearing member 15 is rotated by a drive motor 16 via a belt 17 at 10 rpm to 500 rpm. 18 is a rotary table, 10 ~ 500 rpm via a belt 20 by a drive motor 19
To rotate. Reference numeral 21 is an electrode board made of a material such as platinum or stainless steel that does not easily cause ionization. The electrode board 21 and the rotary table 18 are insulated by a non-conductive film 22. A soft fine hair artificial leather 23 was provided on the surface of the electrode board 21. Instead of the soft fine hair artificial leather 23, a foamed polyurethane sheet which is a soft porous material can be used. As the polishing liquid 24, a polishing agent having a thickness of about 0.1 μm such as Al 2 O 3 and CeO 2 was suspended in alcohol or water and used. Reference numeral 25 is an electrode for forming an electric field with the electrode board 21. 26
Is a brush, 27 is a voltmeter, and 28 is an ammeter, and 0 to 500 V is applied. However, 29 is a polisher main body base, and 30 is a weight that applies a predetermined pressing load to the workpiece.
以上のように構成された研磨装置に於て、以下、その動
作を説明する。The operation of the polishing apparatus having the above structure will be described below.
まず、貼り付けホルダー14に被加工物８を接着貼り付け
し、前記工を研削あるいはラッピング等により施し、軸
受部材15にセットする。この時、被加工物をポリシャに
所定の圧力で押し付けるために重り30をセットする。さ
らに研磨液24中に電場を形成させるため、所定の電圧を
電極盤21を陽極とし電極25との間に印加する。この電場
で、研磨液中のAl2O3,CeO2等の微粒砥粒に電気泳動を生
じさせ、軟質微細毛質人工皮革23の表面に引き付け保持
させる。この状態で回転テーブル18及び、被加工物８
を、それぞれ所定の回転数で回転させ、研磨を行なう。First, the workpiece 8 is adhered and adhered to the adhering holder 14, the above-mentioned work is performed by grinding or lapping, and the bearing member 15 is set. At this time, a weight 30 is set in order to press the work piece against the polisher with a predetermined pressure. Further, in order to form an electric field in the polishing liquid 24, a predetermined voltage is applied between the electrode disk 21 and the electrode 25 as an anode. This electric field causes the fine abrasive grains such as Al 2 O 3 and CeO 2 in the polishing liquid to cause electrophoresis, and the fine abrasive grains 23 are attracted and held on the surface of the soft fine hair artificial leather 23. In this state, the rotary table 18 and the workpiece 8
Are each rotated at a predetermined number of rotations to perform polishing.
この研磨機を用いて、φ80の光学ガラスBK−７を研磨し
た結果を第３図に示す。第３図において31は、電圧印加
せずに研磨したもので、押し付け圧力は17g/cm2で、ポ
リシャの回転数、被加工物の回転数はいずれも60rpmで
ある。ＢはＡと同様の研磨結果で、押し付け圧力が35g/
cm2の場合である。C,DはそれぞれA,Bと同様の条件で、
電極間に130Vの電圧を印加した場合であり、極めて大き
な効果があらわれていることがわかる。FIG. 3 shows the result of polishing optical glass BK-7 having a diameter of 80 using this polishing machine. In FIG. 3, reference numeral 31 denotes a piece that is polished without applying a voltage, the pressing pressure is 17 g / cm 2 , and the rotation speed of the polisher and the rotation speed of the workpiece are both 60 rpm. B is the same polishing result as A, and pressing pressure is 35 g /
This is the case of cm 2 . C and D are the same conditions as A and B, respectively.
This is the case when a voltage of 130 V was applied between the electrodes, and it can be seen that an extremely large effect is exhibited.
以上のように本実施例によれば、Rmax0.005μｍ以下の
良好な研磨面が容易に得られ、又、研磨速度が極めて速
くなり、効率的に研磨加工を行なうことが出来る。As described above, according to this example, a good polished surface having R max of 0.005 μm or less can be easily obtained, and the polishing rate becomes extremely high, so that polishing can be efficiently performed.
なお、上記実施例は平面研磨についてのものであるが、
本発明の研磨法においては、加工時に砥粒が被加工物に
作用する物理的メカニズムは、接触研磨法と基本的に同
様であるため、曲面の研磨にも適用でき、同様の効果が
得られることは言うまでもない。Although the above-mentioned examples are for flat polishing,
In the polishing method of the present invention, the physical mechanism by which the abrasive grains act on the work piece during processing is basically the same as that of the contact polishing method, so that it can be applied to the polishing of a curved surface and the same effect can be obtained. Needless to say.
発明の効果 このように本発明は、電極盤表層に軟質の多孔質材料あ
るいは、微細毛質材料を設けたポリシャと、このポリシ
ャ上に所定の底面圧力で押し付けられ相対運動する被加
工物とを、研磨剤を液体に懸濁した研磨液中に配置し、
さらに、この研磨液中に上記電極盤に対向させて電極板
を設け、電場の影響下に於て研磨中の研磨剤を前記ポリ
シャ表面に電気泳動により引き付け集中させるととも
に、これを保持させ、被加工物表面に作用させることに
より、非接触研磨法の利点を失うことなく、しかも被加
工物への研磨剤の有効な作用により研磨速度が著しく増
加するため、量産性が向上し、加工コストを容易に低減
できる。また、本発明の研磨法においては、加工時に砥
粒が被加工物に作用する物理的メカニズムは、接触研磨
法と基本的に同様であるため、曲面の研磨にも適用で
き、同様の効果を得ることができる。EFFECTS OF THE INVENTION As described above, the present invention provides a polisher having a soft porous material or fine hair material provided on the surface of the electrode plate, and a work piece which is pressed on the polisher at a predetermined bottom surface pressure and moves relative to each other. , Place the abrasive in a polishing liquid suspended in a liquid,
Further, an electrode plate is provided in the polishing liquid so as to face the electrode plate, and the polishing agent under polishing is attracted and concentrated by electrophoresis on the surface of the polisher under the influence of an electric field. By acting on the surface of the work piece, the advantages of the non-contact polishing method are not lost, and the polishing rate is remarkably increased by the effective action of the abrasive on the work piece, which improves mass productivity and reduces the processing cost. It can be easily reduced. Further, in the polishing method of the present invention, the physical mechanism by which the abrasive grains act on the workpiece during processing is basically the same as the contact polishing method, and therefore can be applied to the polishing of a curved surface, and the same effect can be obtained. Obtainable.
第１図は本発明の加工原理を示す模式図、第２図は本発
明を用いた研磨装置の一実施例を示す正面断面図であ
り、第３図はその実施例に於ける加工結果を示すグラ
フ、第４図及び第５図は従来の電界中にて研磨を行なう
研磨装置の斜視図である。 13,24……研磨液、８……被加工物、10,21……電極盤、
9,23……軟質微細毛質材料、12,25……電極板、11……
微粒研磨剤。FIG. 1 is a schematic view showing the processing principle of the present invention, FIG. 2 is a front sectional view showing an embodiment of a polishing apparatus using the present invention, and FIG. 3 shows a processing result in the embodiment. The graphs shown in FIGS. 4 and 5 are perspective views of a conventional polishing apparatus for polishing in an electric field. 13,24 …… polishing liquid, 8 …… workpiece, 10,21 …… electrode board,
9,23 …… Soft fine hair material, 12,25 …… Electrode plate, 11 ……
Fine abrasive.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中田 邦夫 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 上田 修治 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 審査官 高木 進 (56)参考文献 特開 昭57−163055（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kunio Nakata 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Shuji Ueda 1006 Kadoma, Kadoma City, Osaka Matsuda Electric Industrial Co. Officials Susumu Takagi (56) References JP-A-57163055 (JP, A)
Claims (1)
いは微細毛質材料を設けたポリシャと、前記ポリシャの
表面上に所定の低面圧力で押し付けられ相対運動する被
加工物とを、研磨剤を懸濁した研磨液中に配置し、さら
に、この研磨液中に前記電極盤に対向させて電極板を設
け、電場の影響下に於て、研磨液中の研磨剤を前記ポリ
シャの表面に電気泳動により引き付け保持させ、被加工
物表面に作用させることを特徴とする精密研磨方法。1. A polisher in which a porous material or a fine hair material is provided on the surface layer of a swivel electrode plate, and a work piece which is pressed against the surface of the polisher at a predetermined low surface pressure and moves relative to each other. The polishing agent is placed in a polishing solution in which the polishing agent is suspended, and an electrode plate is provided in the polishing solution so as to face the electrode plate, and the polishing agent in the polishing solution is removed from the polishing solution under the influence of an electric field. A precision polishing method characterized in that it is attracted to and held on the surface by electrophoresis, and is caused to act on the surface of the workpiece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60230167A JPH0775829B2 (en) | 1985-10-16 | 1985-10-16 | Precision polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60230167A JPH0775829B2 (en) | 1985-10-16 | 1985-10-16 | Precision polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6288566A JPS6288566A (en) | 1987-04-23 |
| JPH0775829B2 true JPH0775829B2 (en) | 1995-08-16 |
Family
ID=16903648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60230167A Expired - Lifetime JPH0775829B2 (en) | 1985-10-16 | 1985-10-16 | Precision polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0775829B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3552427B2 (en) * | 1996-11-18 | 2004-08-11 | 株式会社日立製作所 | Polishing method for semiconductor device |
| WO1998045089A1 (en) * | 1997-04-09 | 1998-10-15 | Hitachi, Ltd. | Manufacturing method, polishing method and polishing device for semiconductor devices |
| KR100396052B1 (en) * | 2001-06-15 | 2003-08-27 | 한국기계연구원 | Equipment for planarization machining |
| CN108436748B (en) * | 2018-05-21 | 2024-04-23 | 浙江工业大学 | Blade edge liquid metal burnishing device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5946739B2 (en) * | 1981-03-25 | 1984-11-14 | 東洋研磨材工業株式会社 | Surface polishing method |
-
1985
- 1985-10-16 JP JP60230167A patent/JPH0775829B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6288566A (en) | 1987-04-23 |
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