JPH0777149A - Ignition device for internal combustion engine - Google Patents
Ignition device for internal combustion engineInfo
- Publication number
- JPH0777149A JPH0777149A JP30691693A JP30691693A JPH0777149A JP H0777149 A JPH0777149 A JP H0777149A JP 30691693 A JP30691693 A JP 30691693A JP 30691693 A JP30691693 A JP 30691693A JP H0777149 A JPH0777149 A JP H0777149A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- switching element
- grounded
- igbt
- primary winding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Ignition Installations For Internal Combustion Engines (AREA)
Abstract
(57)【要約】
【目的】火花放電時にスイッチング素子に印加される過
電圧およびｄv ／ｄt を緩和して素子を保護し、かつ素
子構造の改善により過電圧耐量を向上する。
【構成】電源３の非接地端に一次，二次巻線の一方端が
接続された点火コイル１と、二次巻線の他方端に非接地
側が接続された点火プラグ５と、一次巻線を介して電源
に直列接続されたスイッチング素子１２とを含む内燃機
関用点火装置において、スイッチング素子１２がコレク
タＣが一次巻線に接続され，エミッタＥが接地された絶
縁ゲ−ト型バイポ−ラトランジスタ（ＩＧＢＴ）からな
り、そのコレクタＣとゲ−トＧとの間にアバランシェ電
圧を有する保護ダイオ−ド２２、および逆阻止ダイオ−
ド２３の直列体からなる保護回路２１を、保護ダイオ−
ド２２はそのカソ−ドをコレクタ側に，逆阻止ダイオ−
ド２３はそのカソ−ドをゲ−ト側にして接続してなるも
のとする。
(57) [Abstract] [Purpose] To alleviate the overvoltage and dv / dt applied to the switching element during spark discharge to protect the element, and to improve the overvoltage withstand capability by improving the element structure. [Structure] An ignition coil 1 having one end of a primary winding and a secondary winding connected to a non-grounded end of a power supply 3, an ignition plug 5 having a non-grounded side connected to the other end of a secondary winding, and a primary winding. In an ignition device for an internal combustion engine, which includes a switching element 12 connected in series to a power source through a switching element 12, the switching element 12 has an collector E connected to a primary winding and an emitter E grounded. A protection diode 22 composed of a transistor (IGBT) having an avalanche voltage between its collector C and gate G, and a reverse blocking diode 22.
The protection circuit 21 composed of a serial body of the switch 23 is connected to the protection diode.
The card 22 has the cathode on the collector side and the reverse blocking diode.
It is assumed that the cord 23 is connected with its cathode on the gate side.
Description
【０００１】[0001]
【産業上の利用分野】この発明は、自動車などの内燃機
関の点火に使用される電子式の内燃機関用点火装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic internal combustion engine ignition device used for ignition of an internal combustion engine such as an automobile.
【０００２】[0002]
【従来の技術】図４は従来の内燃機関用点火装置を模式
化して示す接続図であり、点火装置は一端が接地された
電源３と、その非接地端に一次巻線１Ａおよび二次巻線
１Ｂそれぞれの一方端が接続された点火コイル１と、二
次巻線１Ｂの他方端に非接地側が接続された点火プラグ
５と、一次巻線１Ａを介して電源に直列接続されたスイ
ッチング素子２と、このスイッチング素子２のオンオフ
タイミングを制御する点火制御装置４とを含み、点火コ
イル１の１次巻線１Ａに流れる電流をスイッチング素子
２によって断続的に遮断したとき、２次巻線１Ｂに生ず
る高電圧を点火プラグ５に印加し、点火プラグ５で発生
する火花放電により内燃機関内の燃料ガスに着火し、内
燃機関を駆動する。また、スイッチング素子２をオンす
る際二次巻線に逆電圧が発生するが、この逆電圧は電源
３側に放電し、例えば電源側に設けた図示しないコンデ
ンサ等に吸収される。2. Description of the Related Art FIG. 4 is a connection diagram schematically showing a conventional ignition device for an internal combustion engine. The ignition device has a power source 3 whose one end is grounded, and a primary winding 1A and a secondary winding at its non-grounded end. Ignition coil 1 having one end connected to each wire 1B, ignition plug 5 having the other end of secondary winding 1B connected to the non-grounded side, and switching element connected in series to a power supply via primary winding 1A 2 and an ignition control device 4 for controlling the on / off timing of the switching element 2, the secondary winding 1B when the current flowing in the primary winding 1A of the ignition coil 1 is intermittently cut off by the switching element 2. Is applied to the spark plug 5 to ignite the fuel gas in the internal combustion engine by the spark discharge generated in the spark plug 5 to drive the internal combustion engine. Further, when the switching element 2 is turned on, a reverse voltage is generated in the secondary winding. This reverse voltage is discharged to the power supply 3 side and is absorbed by, for example, a capacitor (not shown) provided on the power supply side.
【０００３】このように構成された内燃機関用点火装置
において、スイッチング素子２には従来バイポ−ラトラ
ンジスタが用いられているが、バイポ−ラトランジスタ
が電流駆動型の素子であるため、これを駆動する点火制
御装置４での消費電力が大きく、かつスイッチング損失
も大きいこと、およびバイポ−ラトランジスタのストレ
−ジタイムが大きいために進角制御の微妙コントロ−ル
など点火タイミングの制御が難しいという問題があっ
た。そこで、これらの問題を解決するために、電圧駆動
型で高速スイッチング特性に優れ，低飽和電圧特性でス
イッチング損失の少ないＭＯＳＦＥＴ，ＩＧＢＴなどの
絶縁ゲ−ト型トランジスタをスイッチング素子２として
使用した内燃機関用点火装置が提案されている。In the ignition device for an internal combustion engine having such a structure, a bipolar transistor is conventionally used as the switching element 2. However, since the bipolar transistor is a current-driven element, it is driven. There is a problem that it is difficult to control the ignition timing such as a delicate control of the advance angle control because the ignition controller 4 consumes a large amount of power and the switching loss is large, and the storage time of the bipolar transistor is large. there were. Therefore, in order to solve these problems, an internal combustion engine that uses an insulating gate type transistor such as a MOSFET or an IGBT, which is a voltage drive type, has excellent high-speed switching characteristics, and has low saturation voltage characteristics and little switching loss, is used as the switching element 2. Ignition devices have been proposed.
【０００４】[0004]
【発明が解決しようとする課題】市販のＭＯＳＦＥＴ，
ＩＧＢＴなどをスイッチング素子２として使用した内燃
機関用点火装置についてその性能試験を行ったところ、
スイッチング素子が異常発熱を起こし、ときにはスイッ
チング素子が破壊するという問題点のあることが判明し
た。その原因について検討した結果、点火プラグ５の火
花放電時に発生する過電圧、および急峻なｄv ／ｄt が
点火コイル１を介してスイッチング素子２に印加される
ことが原因であることが判明した。SUMMARY OF THE INVENTION Commercially available MOSFETs,
When a performance test was performed on an internal combustion engine ignition device using an IGBT or the like as the switching element 2,
It has been found that there is a problem that the switching element causes abnormal heat generation and sometimes the switching element is destroyed. As a result of examination of the cause, it has been found that the cause is that an overvoltage generated at the time of spark discharge of the spark plug 5 and a steep dv / dt are applied to the switching element 2 via the ignition coil 1.
【０００５】この発明の目的は、火花放電時にスイッチ
ング素子に印加される過電圧およびｄv ／ｄt を緩和し
て素子を保護するとともに、素子特性を改善して耐電圧
性能を向上することにある。An object of the present invention is to alleviate the overvoltage and dv / dt applied to the switching element during spark discharge to protect the element, and improve the element characteristics to improve the withstand voltage performance.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
に、この発明によれば、一端が接地された電源と、その
非接地端に一次巻線および二次巻線それぞれの一方端が
接続された点火コイルと、二次巻線の他方端に非接地側
が接続された点火プラグと、一次巻線を介して電源に直
列接続されたスイッチング素子とを含み、このスイッチ
ング素子をオンオフすることにより二次巻線に生ずる高
電圧を点火プラグに印加するものにおいて、前記スイッ
チング素子がコレクタが一次巻線に接続された絶縁ゲ−
ト型バイポ−ラトランジスタ（ＩＧＢＴ）からなり、そ
のコレクタとゲ−トとの間にアバランシェ電圧を有する
保護ダイオ−ドおよび逆阻止ダイオ−ドの直列体からな
る保護回路を，保護ダイオ−ドはそのカソ−ドをコレク
タ側に，逆阻止ダイオ−ドはそのカソ−ドをゲ−ト側に
して接続してなるものとする。In order to solve the above-mentioned problems, according to the present invention, a power source whose one end is grounded and one end of each of the primary winding and the secondary winding is connected to the non-grounded end thereof. Ignition coil, a spark plug having a non-grounded side connected to the other end of the secondary winding, and a switching element connected in series to the power supply via the primary winding, and by turning on and off this switching element In a high voltage applied to a spark plug in a secondary winding, the switching element is an insulating gate having a collector connected to the primary winding.
A protection circuit composed of a series bipolar bipolar transistor (IGBT) having avalanche voltage between its collector and gate, and a series circuit of a reverse blocking diode. It is assumed that the cathode is connected to the collector side and the reverse blocking diode is connected to the gate side.
【０００７】保護ダイオ−ドのアバランシェ電圧がＩＧ
ＢＴのコレクタ・エミッタ間耐電圧値より１０〜１００
Ｖ低く、このアバランシェ電圧と逆阻止ダイオ−ドの耐
電圧値の和がＩＧＢＴのコレクタ・エミッタ間耐電圧値
とほぼ同等であることとする。一端が接地された電源
と、その非接地端に一次巻線および二次巻線それぞれの
一方端が接続された点火コイルと、二次巻線の他方端に
非接地側が接続された点火プラグと、一次巻線を介して
電源に直列接続されたスイッチング素子とを含み、この
スイッチング素子をオンオフすることにより二次巻線に
生ずる高電圧を点火プラグに印加するものにおいて、前
記スイッチング素子がコレクタが一次巻線に接続された
絶縁ゲ−ト型バイポ−ラトランジスタ（ＩＧＢＴ）から
なり、そのコレクタとエミッタ間にカソ−ドをコレクタ
側にして接続されたアバランシェ電圧を有する保護ダイ
オ−ドからなる保護回路を備えてなるものとする。If the avalanche voltage of the protection diode is IG
10 to 100 from the BT collector-emitter withstand voltage value
It is assumed that V is low, and the sum of this avalanche voltage and the withstand voltage value of the reverse blocking diode is approximately equal to the collector-emitter withstand voltage value of the IGBT. A power supply whose one end is grounded, an ignition coil whose one end is connected to the non-grounded end of the primary winding and a secondary winding, and an ignition plug whose other end is connected to the non-grounded side. , A switching element connected in series to a power source via a primary winding, and applying a high voltage generated in the secondary winding to the ignition plug by turning on / off the switching element, wherein the switching element has a collector. Protection consisting of an insulation gate type bipolar transistor (IGBT) connected to the primary winding, and a protection diode having an avalanche voltage connected between the collector and the emitter with the cathode on the collector side. It shall be equipped with a circuit.
【０００８】保護ダイオ−ドのアバランシェ電圧値をＩ
ＧＢＴのコレクタ・エミッタ間耐電圧値より１０〜１０
０Ｖ低く設定してなるものとする。一端が接地された電
源と、その非接地端に一次巻線および二次巻線それぞれ
の一方端が接続された点火コイルと、二次巻線の他方端
に非接地側が接続された点火プラグと、一次巻線を介し
て電源に直列接続されたスイッチング素子とを含み、こ
のスイッチング素子をオンオフすることにより二次巻線
に生ずる高電圧を点火プラグに印加するものにおいて、
前記スイッチング素子がコレクタが一次巻線に接続され
た絶縁ゲ−ト型バイポ−ラトランジスタ（ＩＧＢＴ）か
らなり、そのシリコンウエハのｎ- 層部分の比抵抗値が
１０Ω−cm以上，４０Ω−cm以下であるものとする。The avalanche voltage value of the protection diode is set to I
10 to 10 from the withstand voltage value between the collector and emitter of GBT
It shall be set 0 V lower. A power supply whose one end is grounded, an ignition coil whose one end is connected to the non-grounded end of the primary winding and a secondary winding, and an ignition plug whose other end is connected to the non-grounded side. , A switching element serially connected to a power source via a primary winding, and applying a high voltage generated in the secondary winding to the ignition plug by turning on and off the switching element,
The switching element comprises an insulated gate bipolar transistor (IGBT) whose collector is connected to the primary winding, and the specific resistance value of the n - layer portion of the silicon wafer is 10 Ω-cm or more and 40 Ω-cm or less. Shall be
【０００９】絶縁ゲ−ト型バイポ−ラトランジスタ（Ｉ
ＧＢＴ）が２５０ｍｊ以上のエネルギ−耐量を有するも
のとする。絶縁ゲ−ト型バイポ−ラトランジスタ（ＩＧ
ＢＴ）が３００Ｖ以上の耐電圧性能を有するものとす
る。Insulated gate type bipolar transistor (I
(GBT) has an energy-withstand capacity of 250 mj or more. Insulated gate type bipolar transistor (IG
BT) has a withstand voltage performance of 300 V or more.
【００１０】[0010]
【作用】この発明において、スイッチング素子をコレク
タが点火コイルの一次巻線に接続された絶縁ゲ−ト型バ
イポ−ラトランジスタ（ＩＧＢＴ）とし、そのコレクタ
とゲ−トとの間にアバランシェ電圧を有する保護ダイオ
−ドおよび逆阻止ダイオ−ドの直列体からなる保護回路
を，保護ダイオ−ドはそのカソ−ドをコレクタ側に，逆
阻止ダイオ−ドはそのカソ−ドをゲ−ト側にして接続す
るよう構成したことにより、点火プラグの放電に伴って
ＩＧＢＴのコレクタ・エミッタ間に印加される過電圧が
保護ダイオ−ドのアバランシェ電圧を越えたとき、保護
ダイオ−ドにアバランシェ電流が流れ、この電流によっ
てＩＧＢＴのゲ−ト電位が上昇してＩＧＢＴを瞬間的に
オンさせるので、ＩＧＢＴの発生損失は減少し、異常発
熱を防止する機能が得られる。また、保護ダイオ−ドの
アバランシェ電圧がＩＧＢＴのコレクタ・エミッタ間耐
電圧値より１０〜１００Ｖ低く、このアバランシェ電圧
と逆阻止ダイオ−ドの耐電圧値の和がＩＧＢＴのコレク
タ・エミッタ間耐電圧値とほぼ同等になるよう構成すれ
ば、過電圧をＩＧＢＴのコレクタ・エミッタ間耐電圧値
より１０〜１００Ｖ低いアバランシェ電圧に抑制して素
子の破壊を防止できるとともに、耐電圧値の低い逆素子
ダイオ−ドを用いて保護装置を小型化する機能が得られ
る。In the present invention, the switching element is an insulated gate bipolar transistor (IGBT) whose collector is connected to the primary winding of the ignition coil, and has an avalanche voltage between its collector and gate. A protection circuit consisting of a series body of a protection diode and a reverse blocking diode, the protection diode with its cathode on the collector side, and the reverse blocking diode with its cathode on the gate side. With this configuration, when the overvoltage applied between the collector and the emitter of the IGBT with the discharge of the spark plug exceeds the avalanche voltage of the protection diode, an avalanche current flows in the protection diode. Since the gate potential of the IGBT rises due to the current and the IGBT is momentarily turned on, the loss generated in the IGBT is reduced and abnormal heat generation is prevented. Obtained. The avalanche voltage of the protection diode is lower than the collector-emitter withstand voltage value of the IGBT by 10 to 100 V, and the sum of this avalanche voltage and the withstand voltage value of the reverse blocking diode is the collector-emitter withstand voltage value of the IGBT. If it is configured to be almost equal to, the overvoltage can be suppressed to an avalanche voltage that is 10 to 100 V lower than the collector-emitter withstand voltage value of the IGBT to prevent the breakdown of the element, and the reverse element diode with a low withstand voltage value. Is used to obtain the function of miniaturizing the protection device.
【００１１】また、スイッチング素子としてコレクタが
一次巻線に接続された絶縁ゲ−ト型バイポ−ラトランジ
スタ（ＩＧＢＴ）を用い、そのコレクタとエミッタ間に
カソ−ドをコレクタ側にして接続されたアバランシェ電
圧を有する保護ダイオ−ドからなる保護回路を設けると
ともに、そのアバランシェ電圧をＩＧＢＴのコレクタ・
エミッタ間耐電圧値より１０〜１００Ｖ低く設定するよ
う構成したことにより、ＩＧＢＴのコレクタ・エミッタ
間耐電圧値を越える急峻なｄv ／ｄt を有する過電圧は
その大きさおよび急峻度が緩和され、従って素子の破壊
を防止する保護機能が得られるとともに、保護回路の構
成を簡素化する機能が得られる。An insulated gate bipolar transistor (IGBT) having a collector connected to the primary winding is used as a switching element, and an avalanche connected between the collector and the emitter with the cathode on the collector side. A protection circuit consisting of a protection diode having a voltage is provided, and the avalanche voltage is set to the collector of the IGBT.
Since the voltage is set to be 10 to 100 V lower than the withstand voltage value between the emitters, the magnitude and the steepness of the overvoltage having a steep dv / dt exceeding the withstand voltage value between the collector and the emitter of the IGBT are relaxed in magnitude and therefore the device. It is possible to obtain a protection function for preventing the destruction of the protection circuit and a function for simplifying the configuration of the protection circuit.
【００１２】さらに、スイッチング素子としてコレクタ
が一次巻線に接続された絶縁ゲ−ト型バイポ−ラトラン
ジスタ（ＩＧＢＴ）を用い、そのシリコンウエハのｎ-
層部分の比抵抗値を１０Ω−cm以上，４０Ω−cm以下の
低い範囲に抑えるよう構成すれば、過電圧によってｎ-
層内に生ずる電界を緩和し、そのエネルギ−耐量を向上
できるので、急峻なｄv ／ｄt に対する破壊耐量を向上
させ、過電圧によるスイッチング素子を防止することが
可能となり、例えば、過電圧に対して２５０ｍｊ以上の
エネルギ−耐量，および３００Ｖ以上の耐電圧性能を有
する絶縁ゲ−ト型バイポ−ラトランジスタ（ＩＧＢＴ）
を得ることができる。Further, an insulating gate type bipolar transistor (IGBT) whose collector is connected to the primary winding is used as a switching element, and n − of the silicon wafer is used.
The specific resistance of the layer portion 10 [Omega-cm or more, if configured to suppress the following low range 40 [Omega-cm, n overvoltage -
Since the electric field generated in the layer can be relaxed and the energy withstand capability thereof can be improved, the breakdown withstand capability against steep dv / dt can be improved and the switching element due to overvoltage can be prevented. For example, 250 mj or more against overvoltage. Insulated Gate Bipolar Transistor (IGBT) with high energy resistance and withstand voltage of 300V or more
Can be obtained.
【００１３】[0013]
【実施例】以下、この発明を実施例に基づいて説明す
る。図１はこの発明の実施例になる内燃機関用点火装置
を模式化して示す要部の接続図であり、従来技術と同じ
構成部分には同一参照符号を付すことにより、重複した
説明を省略する。図において、一端が接地された電源３
と、その非接地端に一次巻線１Ａおよび二次巻線１Ｂそ
れぞれの一方端が接続された点火コイル１と、二次巻線
の他方端に非接地側が接続された点火プラグ５と、一次
巻線を介して電源に直列接続されたスイッチング素子１
２とを含む内燃機関用点火装置において、スイッチング
素子１２がコレクタＣが一次巻線に接続され，エミッタ
Ｅが接地された絶縁ゲ−ト型バイポ−ラトランジスタ
（ＩＧＢＴ）からなり、そのコレクタＣとゲ−トＧとの
間にアバランシェ電圧を有する保護ダイオ−ド２２、お
よび逆阻止ダイオ−ド２３の直列体からなる保護回路２
１を、保護ダイオ−ド２２はそのカソ−ドをコレクタ側
に，逆阻止ダイオ−ド２３はそのカソ−ドをゲ−ト側に
して接続するよう構成される。EXAMPLES The present invention will be described below based on examples. FIG. 1 is a connection diagram of essential parts schematically showing an ignition device for an internal combustion engine according to an embodiment of the present invention. The same components as those of the prior art are designated by the same reference numerals, and a duplicate description will be omitted. . In the figure, a power supply 3 with one end grounded
An ignition coil 1 having one end of each of the primary winding 1A and the secondary winding 1B connected to the non-grounded end thereof, an ignition plug 5 having the other end of the secondary winding connected to the non-grounded side, and a primary Switching element 1 connected in series to the power supply via the winding
In an ignition device for an internal combustion engine including the switching element 12 and the switching element 12, the switching element 12 comprises an insulated gate bipolar transistor (IGBT) having a collector C connected to the primary winding and an emitter E grounded. A protection circuit 2 consisting of a series body of a protection diode 22 having an avalanche voltage between the gate G and a reverse blocking diode 23.
1 is connected to the protection diode 22 with its cathode on the collector side, and the reverse blocking diode 23 with its cathode on the gate side.
【００１４】このように構成された内燃機関用点火装置
の保護回路２１において、点火制御装置４により一次巻
線１Ａに流れる電流を断続制御されるＩＧＢＴ１２がオ
フする際、二次巻線１Ｂに高電圧（１０〜２０ｋｖ）が
発生し、この高電圧によって点火プラグ５が放電して点
火プラグ５が火花放電によって短絡状態となり、エミッ
タ接地されたＩＧＢＴ１２との間に点火コイル１を介し
て並列回路が形成されると、タ−ンオフした直後のＩＧ
ＢＴ１２のコレクタ・エミッタ間にその耐電圧値を遙か
に越える過電圧が印加される。このとき、過電圧によっ
て保護ダイオ−ド２２にアバランシェ電流が流れ、この
電流によってＩＧＢＴのゲ−ト電位が上昇してＩＧＢＴ
を瞬間的にオンさせるので、過電圧による放電エネルギ
−の大部分は導通状態となったＩＧＢＴのエミッタ電流
として大地側に放流され、かつアバランシェ電流が流れ
止むと同時にＩＧＢＴはオフ状態を回復する。従って、
コレクタ・エミッタ間に加わる過電圧が大幅に低減され
て急峻なｄv ／ｄt および発生損失は減少し、ＩＧＢＴ
の異常発熱およびこれに起因するＩＧＢＴの破壊を防止
する保護動作をＩＧＢＴのスイッチング機能に影響を及
ぼすことなく達成することができる。In the protection circuit 21 of the ignition device for an internal combustion engine configured as described above, when the IGBT 12, which is intermittently controlled by the ignition control device 4 to control the current flowing through the primary winding 1A, is turned off, the secondary winding 1B has a high voltage. A voltage (10 to 20 kv) is generated, the high voltage discharges the spark plug 5 and the spark plug 5 is short-circuited by spark discharge, and a parallel circuit is formed between the IGBT 12 whose emitter is grounded and the ignition coil 1. Once formed, the IG immediately after turning off
An overvoltage far exceeding the withstand voltage value is applied between the collector and the emitter of the BT12. At this time, an avalanche current flows through the protection diode 22 due to the overvoltage, and this current raises the gate potential of the IGBT to increase the IGBT.
Is turned on instantaneously, most of the discharge energy due to overvoltage is discharged to the ground side as the emitter current of the IGBT in the conductive state, and the avalanche current stops flowing, and at the same time the IGBT recovers the off state. Therefore,
The overvoltage applied between the collector and the emitter is greatly reduced, and the steep dv / dt and the generated loss are reduced.
It is possible to achieve the protection operation for preventing the abnormal heat generation of the IGBT and the resulting destruction of the IGBT without affecting the switching function of the IGBT.
【００１５】また、保護ダイオ−ド２２のアバランシェ
電圧がＩＧＢＴ１２のコレクタ・エミッタ間耐電圧値よ
り１０〜１００Ｖ低く、このアバランシェ電圧と逆阻止
ダイオ−ド２３の耐電圧値との和がＩＧＢＴのコレクタ
・エミッタ間耐電圧値とほぼ同等になるよう構成すれ
ば、過電圧をＩＧＢＴのコレクタ・エミッタ間耐電圧値
より１０〜１００Ｖ低いアバランシェ電圧にまで抑制し
て素子の破壊を防止できるとともに、耐電圧値の低い逆
阻止ダイオ−ドを用いて保護回路２１を小型に構成でき
る利点が得られる。Further, the avalanche voltage of the protection diode 22 is lower than the collector-emitter withstand voltage value of the IGBT 12 by 10 to 100 V, and the sum of this avalanche voltage and the withstand voltage value of the reverse blocking diode 23 is the collector of the IGBT. -If it is configured to be almost equal to the withstand voltage value between the emitters, the overvoltage can be suppressed to an avalanche voltage that is 10 to 100V lower than the withstand voltage value between the collector and emitter of the IGBT, and the breakdown of the element can be prevented, and the withstand voltage value can be reduced. It is possible to obtain the advantage that the protection circuit 21 can be made compact by using a reverse blocking diode having a low value.
【００１６】図２はこの発明の異なる実施例になる内燃
機関用点火装置の保護装置を模式化して示す接続図であ
り、保護回路３１をＩＧＢＴ１２のコレクタ・エミッタ
間にカソ−ドをコレクタ側にして接続したアバランシェ
電圧を有する保護ダイオ−ドで構成した点が前述の実施
例と異なっており、そのアバランシェ電圧をＩＧＢＴの
コレクタ・エミッタ間耐電圧値より１０〜１００Ｖ低く
設定するよう構成すれば、ＩＧＢＴのコレクタ・エミッ
タ間耐電圧値を越える過電圧をアバランシェ電圧にまで
低減し、かつその急峻なｄv ／ｄt を緩和できるので、
過電圧によるＩＧＢＴの破壊を防止できるとともに、保
護回路３１の構成を簡素化できる利点が得られる。FIG. 2 is a connection diagram schematically showing a protection device for an ignition device for an internal combustion engine according to a different embodiment of the present invention, in which a protection circuit 31 has a cathode between the collector and emitter of the IGBT 12 and a cathode side. It differs from the above-mentioned embodiment in that it is constituted by a protection diode having an avalanche voltage which is connected in a manner such that the avalanche voltage is set to be lower than the collector-emitter withstand voltage value of the IGBT by 10 to 100 V. Since the overvoltage exceeding the collector-emitter withstand voltage value of the IGBT can be reduced to the avalanche voltage and the steep dv / dt can be relaxed,
It is possible to prevent the breakdown of the IGBT due to overvoltage and to obtain the advantage that the configuration of the protection circuit 31 can be simplified.
【００１７】ところで、内燃機関用点火装置にスイッチ
ング素子１２としてＩＧＢＴを使用した場合、点火コイ
ル１に流れる電流（７〜８Ａpeak) を遮断する際、コレ
クタ端子側に発生するサ−ジ電圧を吸収する必要がある
が、この吸収すべきエネルギ−耐量は種々の点火コイル
についての実験結果から２５０ｍj 以上必要であること
が判明している。また、内燃機関用点火装置では点火コ
イルに流れる電流をスイッチング素子１２としてのＩＧ
ＢＴで遮断し、この際点火コイルの２次側に発生する１
０〜２０ｋｖの高電圧を発生で点火プラグに火花放電を
発生させるが、その際点火コイルの一次側に最低３００
Ｖの電圧を必要とする。従って、スイッチング素子１２
としてのＩＧＢＴに過電圧保護回路２１，３１等を設け
たとしても、ＩＧＢＴは２５０ｍj 以上のエネルギ−耐
量と，最低３００Ｖ以上の耐電圧性能とを有することが
求められる。When an IGBT is used as the switching element 12 in the internal combustion engine ignition device, when the current (7 to 8 Apeak) flowing through the ignition coil 1 is cut off, the surge voltage generated at the collector terminal side is absorbed. Although it is necessary, the energy withstand capacity to be absorbed has been found to be 250 mj or more from the experimental results of various ignition coils. Further, in the ignition device for an internal combustion engine, the current flowing through the ignition coil is IG as the switching element 12.
It is cut off by BT, and at this time it is generated on the secondary side of the ignition coil 1
A spark discharge is generated in the spark plug by generating a high voltage of 0 to 20 kv, and at that time, at least 300 is generated on the primary side of the ignition coil.
Requires a voltage of V. Therefore, the switching element 12
Even if the overvoltage protection circuits 21, 31 and the like are provided in the IGBT as described above, the IGBT is required to have an energy withstand capacity of 250 mj or more and a withstand voltage performance of at least 300V or more.
【００１８】図３はこの発明の他の実施例を説明するた
めのＩＧＢＴの基本構造図、図４は図３に示すＩＧＢＴ
のｎ- 層の比抵抗を変えて得られた特性線図であり、図
４はシリコンウエハにエピタキシャル層として形成され
るｎ- 層の厚みを変え、ｎ-層部分の比抵抗が１０〜９
０Ω−ｃｍの範囲内で互いに異なるＩＧＢＴ８種類を製
作し、そのエネルギ−耐量，および耐電圧（降伏電圧）
特性値を測定した結果を示しており、耐電圧特性曲線１
０２はｎ- 層部分の比抵抗に比例して増加するのに対
し、エネルギ−耐量曲線１０１はｎ- 層部分の比抵抗に
逆比例して減少する傾向を示しており、この結果から内
燃機関用点火装置のスイッチング素子１２に要求される
エネルギ−耐量および耐電圧値をともに満たすｎ- 層部
分の比抵抗値に許容範囲が存在することが明らかになっ
た。FIG. 3 is a basic structural diagram of an IGBT for explaining another embodiment of the present invention, and FIG. 4 is an IGBT shown in FIG.
Of n - is a characteristic diagram obtained by changing the specific resistance of the layer, FIG. 4 is n is formed as an epitaxial layer on a silicon wafer - changing the thickness of the layer, n - the specific resistance of the layer portion 10-9
Eight different IGBTs were manufactured within the range of 0 Ω-cm, and their energy-withstand capacity and withstand voltage (breakdown voltage) were used.
The result of measuring the characteristic value is shown, and the withstand voltage characteristic curve 1
02 increases in proportion to the specific resistance of the n − layer portion, whereas the energy-withstand curve 101 shows a tendency to decrease in inverse proportion to the specific resistance of the n − layer portion. It has been revealed that there is an allowable range for the specific resistance value of the n − layer portion that satisfies both the energy-withstand capacity and the withstand voltage value required for the switching element 12 of the ignition device for a vehicle.
【００１９】以上の実験的検討結果から、スイッチング
素子としてコレクタが一次巻線に接続された絶縁ゲ−ト
型バイポ−ラトランジスタ（ＩＧＢＴ）１２を用い、そ
のシリコンウエハのｎ- 層部分の比抵抗値を１０Ω−cm
以上，４０Ω−cm以下の低い範囲に抑えるよう構成すれ
ば、過電圧によってｎ−層内に生ずる電界を緩和し、そ
のエネルギ−耐量を向上できるので、例えば、過電圧に
対して２５０ｍｊ以上のエネルギ−耐量，および３００
Ｖ以上の耐電圧性能を有する絶縁ゲ−ト型バイポ−ラト
ランジスタ（ＩＧＢＴ）を得ることができる。従って、
このように構成されたＩＧＢＴを前述の保護回路２１ま
たは３１と組み合わせて使用することにより、急峻なｄ
v ／ｄt に対する破壊耐量を向上させ、過電圧によるス
イッチング素子の破壊を防止することが可能となり、点
火プラグの放電によって発生する過電圧に耐える信頼性
がより優れた保護回路を備えた内燃機関用点火装置が得
られる。From the above experimental examination results, an insulating gate type bipolar transistor (IGBT) 12 having a collector connected to the primary winding is used as a switching element, and the specific resistance of the n - layer portion of the silicon wafer is used. The value is 10Ω-cm
As described above, if it is configured to be suppressed to a low range of 40 Ω-cm or less, the electric field generated in the n-layer due to overvoltage can be relaxed and its energy withstand capability can be improved. , And 300
An insulating gate type bipolar transistor (IGBT) having a withstand voltage of V or more can be obtained. Therefore,
By using the thus configured IGBT in combination with the protection circuit 21 or 31, the steep d
Ignition device for internal combustion engine equipped with a protection circuit that improves the breakdown resistance against v / dt and prevents the breakdown of switching elements due to overvoltage, and has a more reliable protection circuit that withstands overvoltage generated by discharge of the spark plug. Is obtained.
【００２０】[0020]
【発明の効果】この発明は前述のように、保護回路をス
イッチング素子としてのＩＧＢＴのコレクタとゲ−トと
の間に接続したアバランシェ電圧を有する保護ダイオ−
ドおよび逆阻止ダイオ−ドの直列体、またはコレクタと
エミッタ間にカソ−ドをコレクタ側にして接続したアバ
ランシェ電圧を有する保護ダイオ−ドのいずれかで構成
した、その結果、点火プラグの火花放電時に発生する過
電圧、および急峻なｄv／ｄt が点火コイルを介してＩ
ＧＢＴに印加され、これによりスイッチング素子が異常
発熱を起こし、破壊事故に至るという従来の問題点が排
除され、バイポ−ラトランジスタに比べてスイッチング
損失が少なく、高速スイッチング性能に優れたＩＧＢＴ
をスイッチング素子として用いた内燃機関用点火装置を
提供するとができる。As described above, the present invention has a protection diode having an avalanche voltage in which a protection circuit is connected between the collector and the gate of an IGBT as a switching element.
And a reverse blocking diode in series, or a protective diode with avalanche voltage connected with the cathode on the collector side between the collector and the emitter, resulting in spark plug spark discharge. Occasionally generated overvoltage and steep dv / dt can
The IGBT is applied to the GBT, which eliminates the conventional problem that the switching element causes abnormal heat generation and leads to a breakdown accident. The IGBT has less switching loss than the bipolar transistor and is excellent in high-speed switching performance.
It is possible to provide an ignition device for an internal combustion engine, which uses as a switching element.
【００２１】また、ＩＧＢＴに使用するシリコンウエハ
に形成されるｎ- 層部分の比抵抗値を１０Ω−cm以上４
０Ω−cm以下とすることにより、過電圧によってｎ−層
内に生ずる電界を緩和して耐電圧性能を３００Ｖ以上に
向上できるとともに、そのエネルギ−耐量を２５０ｍｊ
以上に向上し、急峻なｄv ／ｄt に対する破壊耐量を向
上させる機能を、ＩＧＢＴの内部構造の改善により得る
ことができる。従って、このように構成されたＩＧＢＴ
をこの発明の保護回路と組み合わせて使用することによ
り、点火プラグの放電によって発生する過電圧に耐える
信頼性がより優れた保護回路を備えた内燃機関用点火装
置を提供することができる。Further, the specific resistance value of the n - layer portion formed on the silicon wafer used for the IGBT is 10 Ω-cm or more 4
By setting the resistance to 0 Ω-cm or less, the electric field generated in the n-layer due to overvoltage can be relaxed and the withstand voltage performance can be improved to 300 V or more, and the energy-withstand amount can be 250 mj.
The above-mentioned improvement and the function of improving the breakdown resistance against steep dv / dt can be obtained by improving the internal structure of the IGBT. Therefore, an IGBT configured in this way
Can be used in combination with the protection circuit of the present invention, it is possible to provide an ignition device for an internal combustion engine, which is provided with a protection circuit having higher reliability that withstands an overvoltage generated by discharge of an ignition plug.
【図１】この発明の実施例になる内燃機関用点火装置を
模式化して示す要部の接続図FIG. 1 is a connection diagram of essential parts schematically showing an internal combustion engine ignition device according to an embodiment of the present invention.
【図２】この発明の異なる実施例になる内燃機関用点火
装置の保護装置を模式化して示す接続図FIG. 2 is a connection diagram schematically showing a protection device for an internal combustion engine ignition device according to a different embodiment of the present invention.
【図３】この発明の他の実施例を説明するためのＩＧＢ
Ｔの基本構造図FIG. 3 is an IGB for explaining another embodiment of the present invention.
Basic structure of T
【図４】図３に示すＩＧＢＴのｎ- 層の比抵抗を変えて
得られた特性線図FIG. 4 is a characteristic diagram obtained by changing the specific resistance of the n − layer of the IGBT shown in FIG.
【図５】従来の内燃機関用点火装置を模式化して示す接
続図FIG. 5 is a connection diagram schematically showing a conventional ignition device for an internal combustion engine.
１ 点火コイル １Ａ 一次巻線 １Ｂ 二次巻線 ２ スイッチング素子（バイポ−ラトランジスタ） ３ 電源 ４ 点火制御装置 ５ 点火プラグ １２ スイッチング素子（ＩＧＢＴ） ２１ 保護回路 ２２ 保護ダイオ−ド（アバランシェダイオ−ド） ２３ 逆阻止ダイオ−ド ３１ 保護回路（アバランシェダイオ−ド） 1 Ignition coil 1A Primary winding 1B Secondary winding 2 Switching element (bipolar transistor) 3 Power supply 4 Ignition control device 5 Spark plug 12 Switching element (IGBT) 21 Protection circuit 22 Protection diode (avalanche diode) 23 Reverse blocking diode 31 Protection circuit (avalanche diode)
Claims (7)
一次巻線および二次巻線それぞれの一方端が接続された
点火コイルと、二次巻線の他方端に非接地側が接続され
た点火プラグと、一次巻線を介して電源に直列接続され
たスイッチング素子とを含み、このスイッチング素子を
オンオフすることにより二次巻線に生ずる高電圧を点火
プラグに印加するものにおいて、前記スイッチング素子
がコレクタが一次巻線に接続された絶縁ゲ−ト型バイポ
−ラトランジスタ（ＩＧＢＴ）からなり、そのコレクタ
とゲ−トとの間にアバランシェ電圧を有する保護ダイオ
−ドおよび逆阻止ダイオ−ドの直列体からなる保護回路
を，保護ダイオ−ドはそのカソ−ドをコレクタ側に，逆
阻止ダイオ−ドはそのカソ−ドをゲ−ト側にして接続し
てなることを特徴とする内燃機関用点火装置。1. A power supply whose one end is grounded, an ignition coil to which one end of each of a primary winding and a secondary winding is connected to its non-grounded end, and a non-grounded side to the other end of the secondary winding. A spark plug and a switching element connected in series to a power source through a primary winding, and applying a high voltage generated in a secondary winding to the spark plug by turning on and off the switching element, The switching element comprises an insulated gate bipolar transistor (IGBT) having a collector connected to the primary winding, and a protection diode and a reverse blocking diode having an avalanche voltage between the collector and the gate. A protection circuit consisting of a series of diodes is characterized in that the protection diode is connected with its cathode on the collector side and the reverse blocking diode with its cathode on the gate side. Ignition device for an internal combustion engine to be.
ＢＴのコレクタ・エミッタ間耐電圧値より１０〜１００
Ｖ低く、このアバランシェ電圧と逆阻止ダイオ−ドの耐
電圧値の和がＩＧＢＴのコレクタ・エミッタ間耐電圧値
とほぼ同等であることを特徴とする請求項１記載の内燃
機関用点火装置。2. The avalanche voltage of the protection diode is IG.
10 to 100 from the BT collector-emitter withstand voltage value
2. The ignition device for an internal combustion engine according to claim 1, wherein the avalanche voltage is low and the sum of the withstand voltage value of the reverse blocking diode is substantially equal to the collector-emitter withstand voltage value of the IGBT.
一次巻線および二次巻線それぞれの一方端が接続された
点火コイルと、二次巻線の他方端に非接地側が接続され
た点火プラグと、一次巻線を介して電源に直列接続され
たスイッチング素子とを含み、このスイッチング素子を
オンオフすることにより二次巻線に生ずる高電圧を点火
プラグに印加するものにおいて、前記スイッチング素子
がコレクタが一次巻線に接続された絶縁ゲ−ト型バイポ
−ラトランジスタ（ＩＧＢＴ）からなり、そのコレクタ
とエミッタ間にカソ−ドをコレクタ側にして接続された
アバランシェ電圧を有する保護ダイオ−ドからなる保護
回路を備えてなることを特徴とする内燃機関用点火装
置。3. A power supply whose one end is grounded, an ignition coil whose one end is connected to a non-grounded end of each of a primary winding and a secondary winding, and a non-grounded end is connected to the other end of the secondary winding. A spark plug and a switching element connected in series to a power source through a primary winding, and applying a high voltage generated in a secondary winding to the spark plug by turning on and off the switching element, The switching diode comprises an insulated gate bipolar transistor (IGBT) having a collector connected to the primary winding, and a protection diode having an avalanche voltage connected between the collector and the emitter with the cathode on the collector side. An ignition device for an internal combustion engine, comprising: a protection circuit including
ＧＢＴのコレクタ・エミッタ間耐電圧値より１０〜１０
０Ｖ低く設定してなることを特徴とする請求項３記載の
内燃機関用点火装置。4. The avalanche voltage value of the protection diode is set to I.
10 to 10 from the withstand voltage value between the collector and emitter of GBT
The ignition device for an internal combustion engine according to claim 3, wherein the ignition device is set to be 0 V lower.
一次巻線および二次巻線それぞれの一方端が接続された
点火コイルと、二次巻線の他方端に非接地側が接続され
た点火プラグと、一次巻線を介して電源に直列接続され
たスイッチング素子とを含み、このスイッチング素子を
オンオフすることにより二次巻線に生ずる高電圧を点火
プラグに印加するものにおいて、前記スイッチング素子
がコレクタが一次巻線に接続された絶縁ゲ−ト型バイポ
−ラトランジスタ（ＩＧＢＴ）からなり、そのシリコン
ウエハのｎ- 層部分の比抵抗値が１０Ω−cm以上，４０
Ω−cm以下であることを特徴とする内燃機関用点火装
置。5. A power source whose one end is grounded, an ignition coil whose one end is connected to a non-grounded end of each of a primary winding and a secondary winding, and a non-grounded end is connected to the other end of the secondary winding. A spark plug and a switching element connected in series to a power source through a primary winding, and applying a high voltage generated in a secondary winding to the spark plug by turning on and off the switching element, The switching element comprises an insulated gate bipolar transistor (IGBT) whose collector is connected to the primary winding, and the specific resistance value of the n - layer portion of the silicon wafer is 10 Ω-cm or more, 40
An ignition device for an internal combustion engine, which is Ω-cm or less.
ＧＢＴ）が２５０ｍｊ以上のエネルギ−耐量を有するこ
とを特徴とする請求項５記載の内燃機関用点火装置。6. An insulating gate type bipolar transistor (I
The ignition device for an internal combustion engine according to claim 5, wherein the GBT) has an energy-proof capacity of 250 mj or more.
ＧＢＴ）が３００Ｖ以上の耐電圧性能を有することを特
徴とする請求項５記載の内燃機関用点火装置。7. An insulated gate type bipolar transistor (I
The ignition device for an internal combustion engine according to claim 5, wherein the GBT) has a withstand voltage performance of 300 V or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30691693A JP3152040B2 (en) | 1993-07-15 | 1993-12-08 | Ignition device for internal combustion engine |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-174583 | 1993-07-15 | ||
| JP17458393 | 1993-07-15 | ||
| JP30691693A JP3152040B2 (en) | 1993-07-15 | 1993-12-08 | Ignition device for internal combustion engine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0777149A true JPH0777149A (en) | 1995-03-20 |
| JP3152040B2 JP3152040B2 (en) | 2001-04-03 |
Family
ID=26496150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30691693A Expired - Lifetime JP3152040B2 (en) | 1993-07-15 | 1993-12-08 | Ignition device for internal combustion engine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3152040B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0942134A (en) * | 1995-07-31 | 1997-02-10 | Delco Electronics Corp | Ignition coil driver module |
| KR100401611B1 (en) * | 2000-10-17 | 2003-10-11 | 기아자동차주식회사 | Apparatus for controlling igniter over heat prevention of vehicle and method thereof |
| KR20030082715A (en) * | 2002-04-18 | 2003-10-23 | 기아자동차주식회사 | Electric power stabilizer of vehicles |
| EP0757177B1 (en) * | 1995-08-04 | 2004-10-20 | Hitachi, Ltd. | Ignition system of internal combustion engine |
| JP2008267388A (en) * | 1996-03-21 | 2008-11-06 | Hitachi Ltd | Ignition device for internal combustion engine |
-
1993
- 1993-12-08 JP JP30691693A patent/JP3152040B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0942134A (en) * | 1995-07-31 | 1997-02-10 | Delco Electronics Corp | Ignition coil driver module |
| EP0757177B1 (en) * | 1995-08-04 | 2004-10-20 | Hitachi, Ltd. | Ignition system of internal combustion engine |
| JP2008267388A (en) * | 1996-03-21 | 2008-11-06 | Hitachi Ltd | Ignition device for internal combustion engine |
| KR100401611B1 (en) * | 2000-10-17 | 2003-10-11 | 기아자동차주식회사 | Apparatus for controlling igniter over heat prevention of vehicle and method thereof |
| KR20030082715A (en) * | 2002-04-18 | 2003-10-23 | 기아자동차주식회사 | Electric power stabilizer of vehicles |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3152040B2 (en) | 2001-04-03 |
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