JPH0784271A - Antiferroelectric liquid crystal display device - Google Patents

Antiferroelectric liquid crystal display device

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Publication number
JPH0784271A
JPH0784271A JP22690393A JP22690393A JPH0784271A JP H0784271 A JPH0784271 A JP H0784271A JP 22690393 A JP22690393 A JP 22690393A JP 22690393 A JP22690393 A JP 22690393A JP H0784271 A JPH0784271 A JP H0784271A
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JP
Japan
Prior art keywords
liquid crystal
state
alignment
film
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22690393A
Other languages
Japanese (ja)
Inventor
Katsuto Sakamoto
克仁 坂本
Kazuyuki Tada
一幸 多田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP22690393A priority Critical patent/JPH0784271A/en
Publication of JPH0784271A publication Critical patent/JPH0784271A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】ON状態とOFF状態との表示の明るさの比が
大きい、高コントラストの表示を得ることができる反強
誘電性液晶表示素子を提供する。 【構成】上基板1の画素電極3と下基板2の対向電極
を、その表面を任意の方向に走査したときの少なくとも
500nmの走査距離における走査軌跡上の最も高い凸
部と最も低い凹部との高低差が20nm以下の表面粗さ
をもつ電極とし、両基板1,2の配向膜6,7により水
平配向されるとともに、これら配向膜6,7のうちの下
基板2側の配向膜(配列規制膜)7によって配列状態を
規制される液晶分子を、乱れのほとんどない良好な配列
状態で配列させた。
(57) [Summary] [Object] To provide an antiferroelectric liquid crystal display device capable of obtaining a high-contrast display having a large display brightness ratio between the ON state and the OFF state. [Structure] A pixel electrode 3 of an upper substrate 1 and a counter electrode of a lower substrate 2 have a highest convex portion and a lowest concave portion on a scanning locus at a scanning distance of at least 500 nm when the surfaces thereof are scanned in an arbitrary direction. An electrode having a surface roughness with a height difference of 20 nm or less is horizontally aligned by the alignment films 6 and 7 of both substrates 1 and 2, and the alignment film (alignment film on the lower substrate 2 side of the alignment films 6 and 7 is arranged). The liquid crystal molecules whose alignment state was regulated by the regulation film 7 were aligned in a good alignment state with almost no disturbance.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は反強誘電性液晶表示素子
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an antiferroelectric liquid crystal display device.

【0002】[0002]

【従来の技術】最近、液晶表示素子として、一般に用い
られているTN型の液晶表示素子に比べて、高速応答性
および広視野角性に優れた強誘電性液晶表示素子および
反強誘電性液晶を用いた反強誘電性液晶表示素子の研究
が行なわれている。
2. Description of the Related Art Recently, as a liquid crystal display element, a ferroelectric liquid crystal display element and an antiferroelectric liquid crystal which are superior in high-speed response and wide viewing angle as compared with a generally used TN type liquid crystal display element. Research on an antiferroelectric liquid crystal display device using is performed.

【0003】前記反強誘電性液晶表示素子は、一面に透
明電極を形成しその上に水平配向膜を設けた一対の透明
基板をその電極形成面を互いに対向させて配置し、この
両基板間に反強誘電性液晶を封入して構成されている。
In the antiferroelectric liquid crystal display device, a pair of transparent substrates, each having a transparent electrode formed on one surface and a horizontal alignment film formed thereon, are arranged with their electrode formation surfaces facing each other. It is configured by enclosing an antiferroelectric liquid crystal in.

【0004】なお、この反強誘電性液晶表示素子には、
両方の基板の水平配向膜をそれぞれ液晶分子の配列状態
を規制する配列規制膜(例えば膜面を一方向にラビング
処理したポイリイミド膜)としているものと、一方の基
板の水平配向膜のみを前記配列規制膜としているものと
がある。
In this antiferroelectric liquid crystal display element,
One in which the horizontal alignment films of both substrates are each an alignment control film that controls the alignment state of liquid crystal molecules (for example, a polyimide film whose film surface is rubbed in one direction), and only the horizontal alignment film of one substrate is aligned Some are regulated.

【0005】この反強誘電性液晶表示素子は反強誘電性
液晶がもっている分子配列状態の安定性を利用したもの
で、基板間に封入された反強誘電性液晶は、上記配列規
制膜の配列規制方向(ラビング処理したポイリイミド膜
の場合はラビング方向)に応じた向きのスメクティック
層構造をなしており、分子配列状態の3つの安定性をも
ち、かつ電界に応じて液晶分子の配列方向が変化する。
This antiferroelectric liquid crystal display element utilizes the stability of the molecular alignment state possessed by the antiferroelectric liquid crystal, and the antiferroelectric liquid crystal enclosed between the substrates is the above-mentioned alignment control film. It has a smectic layer structure oriented according to the alignment control direction (rubbing direction in the case of a rubbing-treated polyimide film), and has three stability of the molecular alignment state, and the alignment direction of liquid crystal molecules depends on the electric field. Change.

【0006】その第1の安定状態は、液晶層に一方向の
極性の強い電界が印加されたときの状態であり、このと
きは、液晶分子の自発分極が印加電界と作用して、全て
の液晶分子がスメクティック層構造の法線に対し一方向
にあるチルト角で一様に配列する。
The first stable state is a state when an electric field having a strong unidirectional polarity is applied to the liquid crystal layer. At this time, the spontaneous polarization of the liquid crystal molecules acts on the applied electric field, and Liquid crystal molecules are uniformly arranged with a tilt angle in one direction with respect to the normal of the smectic layer structure.

【0007】また、第2の安定状態は、液晶層に逆方向
の極性の強い電界が印加されたときの状態であり、この
ときは、液晶分子の自発分極が逆方向電界と作用して液
晶分子が反転し、全ての液晶分子がスメクティック層構
造の法線に対し上記第1の安定状態とは逆方向に傾いた
上記チルト角で一様に配列する。
The second stable state is a state in which an electric field having a strong polarity in the opposite direction is applied to the liquid crystal layer. At this time, the spontaneous polarization of the liquid crystal molecules acts on the liquid crystal layer in the opposite direction to cause the liquid crystal to move. The molecules are inverted, and all the liquid crystal molecules are uniformly arranged with the tilt angle tilted in the direction opposite to the first stable state with respect to the normal line of the smectic layer structure.

【0008】一方、第3の安定状態は、無電界時または
弱い電界が印加されたときの状態であり、この状態で
は、液晶分子がスメクティック層構造の法線に対し同じ
チルト角で交互に逆方向に傾いた状態で配列(各層ごと
に互い違いの向きで配列)する。したがって、無電界ま
たは弱い電界が印加された状態における液晶層全体での
液晶分子の平均的な配列方向はスメクティック層構造の
法線方向にある。
On the other hand, the third stable state is a state when no electric field is applied or when a weak electric field is applied. In this state, liquid crystal molecules are alternately reversed at the same tilt angle with respect to the normal line of the smectic layer structure. Arrange in a state of being inclined in the direction (arranged in alternate directions for each layer). Therefore, the average alignment direction of the liquid crystal molecules in the entire liquid crystal layer in the state where no electric field or a weak electric field is applied is the normal direction of the smectic layer structure.

【0009】そして、反強誘電性液晶表示素子は、その
両面側にそれぞれ偏光板を配置して使用されており、こ
れら偏光板は、その透過軸を上記反強誘電性液晶の3つ
の安定状態の基準線であるスメクティック層構造の法線
に対してほぼ直交させるかあるいはほぼ平行にし、かつ
両偏光板の透過軸を互いにほぼ直交させて設けられてい
る。
The antiferroelectric liquid crystal display element is used by arranging polarizing plates on both sides thereof, and these polarizing plates have their transmission axes in the three stable states of the antiferroelectric liquid crystal. Are provided so as to be substantially orthogonal or substantially parallel to the normal line of the smectic layer structure, which is the reference line, and the transmission axes of both polarizing plates are substantially orthogonal to each other.

【0010】上記反強誘電性液晶表示素子は、反強誘電
性液晶の分子配列状態を上述した3つの安定状態に制御
して表示するもので、両基板の電極間に電圧を印加して
いない状態または印加電圧が低い状態では、液晶分子が
第3の安定状態に配列して表示がOFF(暗)状態にな
り、前記電極間に一方向の極性または逆方向の極性のO
N電圧を印加すると、液晶分子が第1の安定状態または
第2の安定状態に配列して表示がON(明)状態にな
る。
The above-mentioned antiferroelectric liquid crystal display element displays the antiferroelectric liquid crystal molecules by controlling the molecular alignment state into the above-mentioned three stable states, and does not apply a voltage between the electrodes of both substrates. In the state or in the state where the applied voltage is low, the liquid crystal molecules are arranged in the third stable state and the display is in the OFF (dark) state, and the unidirectional polarity or the reverse polarity O is present between the electrodes.
When the N voltage is applied, the liquid crystal molecules are arranged in the first stable state or the second stable state and the display is turned on (bright).

【0011】[0011]

【発明が解決しようとする課題】しかし、従来の反強誘
電性液晶表示素子は、液晶分子が第3の安定状態に配列
したOFF状態での漏光が多く、したがって、ON状態
とOFF状態との表示の明るさの比であるコントラスト
が低いという問題をもっていた。本発明は、高コントラ
ストの表示が得られる反強誘電性液晶表示素子を提供す
ることを目的としたものである。
However, in the conventional antiferroelectric liquid crystal display element, there is a large amount of light leakage in the OFF state in which the liquid crystal molecules are arranged in the third stable state, and therefore, there are the ON state and the OFF state. The problem is that the contrast, which is the ratio of display brightness, is low. An object of the present invention is to provide an antiferroelectric liquid crystal display device that can obtain a high contrast display.

【0012】[0012]

【課題を解決するための手段】本発明の反強誘電性液晶
表示素子は、少なくとも一方の基板の水平配向膜が、液
晶分子の配列状態を規制する配列規制膜であり、かつ前
記配列規制膜の下の透明電極が、その表面を任意の方向
に走査したときの少なくとも500nmの走査距離にお
ける走査軌跡上の最も高い凸部と最も低い凹部との高低
差が20nm以下の表面粗さをもつ電極であることを特
徴とするものである。
In the antiferroelectric liquid crystal display device of the present invention, the horizontal alignment film of at least one substrate is an alignment control film for controlling the alignment state of liquid crystal molecules, and the alignment control film is also provided. The lower transparent electrode has a surface roughness such that the height difference between the highest convex portion and the lowest concave portion on the scanning locus at a scanning distance of at least 500 nm when the surface is scanned in an arbitrary direction is 20 nm or less. It is characterized by being.

【0013】[0013]

【作用】このように、液晶分子の配列状態を規制する配
列規制膜の下の透明電極が、少なくとも500nmの走
査距離における走査軌跡上の最も高い凸部と最も低い凹
部との高低差が20nm以下である表面粗さの電極であ
れば、その上の前記配列規制膜によって配列状態を規制
される液晶分子が、乱れのほとんどない良好な配列状態
で配列し、液晶分子が第3の安定状態に配列したOFF
状態での漏光が少なくなる。このため、本発明の反強誘
電性液晶表示素子によれば、ON状態とOFF状態との
表示の明るさの比が大きい、高コントラストの表示が得
られる。
As described above, the transparent electrode under the alignment control film that controls the alignment state of the liquid crystal molecules has a height difference of 20 nm or less between the highest convex portion and the lowest concave portion on the scanning locus at a scanning distance of at least 500 nm. In the case of an electrode having a surface roughness of, the liquid crystal molecules on which the alignment state is regulated by the alignment regulating film are aligned in a good alignment state with almost no disturbance, and the liquid crystal molecules are in the third stable state. OFF arranged
Light leakage in the state is reduced. Therefore, according to the antiferroelectric liquid crystal display element of the present invention, a high-contrast display having a large display brightness ratio between the ON state and the OFF state can be obtained.

【0014】[0014]

【実施例】以下、本発明の一実施例を図面を参照して説
明する。図1は反強誘電性液晶表示素子の断面図であ
る。この実施例の反強誘電性液晶表示素子はアクティブ
マトリックス型のものであり、図1において上側の透明
基板(以下、上基板という)1の一面(下面)には、透
明な画素電極3とその能動素子(例えば薄膜トランジス
タ)4とが行方向および列方向に配列形成され、下側の
透明基板(以下、下基板という)2の一面(上面)に
は、前記画素電極3の全てに対向する透明な対向電極5
が形成されている。なお、前記上基板1には、図示しな
いが、各行の能動素子4に選択信号を供給するアドレス
ラインと、各列の能動素子4に画像データ信号を供給す
るデータラインとが配線されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of an antiferroelectric liquid crystal display device. The antiferroelectric liquid crystal display device of this embodiment is of an active matrix type, and in one surface (lower surface) of an upper transparent substrate (hereinafter referred to as an upper substrate) 1 in FIG. Active elements (for example, thin film transistors) 4 are arranged in rows and columns, and one surface (upper surface) of a lower transparent substrate (hereinafter referred to as lower substrate) 2 is transparent to face all of the pixel electrodes 3. Counter electrode 5
Are formed. Although not shown, an address line for supplying a selection signal to the active elements 4 in each row and a data line for supplying an image data signal to the active elements 4 in each column are wired on the upper substrate 1.

【0015】また、前記上基板1と下基板2の電極形成
面上にはそれぞれ水平配向膜6,7が設けられており、
これら水平配向膜6,7のうち、一方の基板、例えば対
向電極5を形成した下基板2上の配向膜7は、液晶分子
の配列状態を規制する配列規制膜とされ、他方の基板
(上基板)1上の配向膜6は、液晶分子の配列規制機能
をもたない非配列規制膜とされている。
Further, horizontal alignment films 6 and 7 are provided on the electrode formation surfaces of the upper substrate 1 and the lower substrate 2, respectively.
Of these horizontal alignment films 6 and 7, one of the substrates, for example, the alignment film 7 on the lower substrate 2 on which the counter electrode 5 is formed is an alignment control film that controls the alignment state of liquid crystal molecules, and the other substrate (upper). The alignment film 6 on the substrate 1 is a non-alignment control film having no alignment control function for liquid crystal molecules.

【0016】なお、上記配列規制膜7は、例えば、膜面
を一方向にラビング処理したポリイミド膜からなってお
り、非配列規制膜6は、ラビング処理しないポリイミド
膜からなっている。
The arrangement regulating film 7 is made of, for example, a polyimide film whose surface is rubbed in one direction, and the non-arrangement regulating film 6 is made of a polyimide film which is not rubbed.

【0017】そして、反強誘電性液晶表示素子は、上記
上基板1と下基板2とをその電極形成面を互いに対向さ
せて配置し、この両基板1,2を枠状のシール材8を介
して接合して、両基板1,2間の前記シール材8で囲ま
れた領域に反強誘電性液晶9を封入して構成されてお
り、基板1,2間に封入された反強誘電性液晶9は、上
記配列規制膜7の配列規制方向(ラビング方向)に応じ
た向きのスメクティック層構造をなしている。
In the antiferroelectric liquid crystal display element, the upper substrate 1 and the lower substrate 2 are arranged with their electrode forming surfaces facing each other, and the both substrates 1 and 2 are provided with a frame-shaped sealing material 8. The antiferroelectric liquid crystal 9 is sealed in a region surrounded by the sealing material 8 between the substrates 1 and 2 by being bonded to each other via the antiferroelectric liquid crystal. The liquid crystal 9 has a smectic layer structure oriented in accordance with the alignment control direction (rubbing direction) of the alignment control film 7.

【0018】なお、反強誘電性液晶表示素子は、両基板
1,2間に反強誘電性液晶9を封入した後、封入液晶が
アイソトロッピック相となる温度に加熱し、その後に前
記液晶が反強誘電性を示す相となる範囲の温度に徐冷す
る再配向処理を行なうことによって製造されており、こ
の再配向処理により、液晶9の配向状態が整然とした層
構造をもって配向する状態になる。
In the antiferroelectric liquid crystal display element, after the antiferroelectric liquid crystal 9 is enclosed between the substrates 1 and 2, it is heated to a temperature at which the enclosed liquid crystal is in an isotropic phase, and then the liquid crystal is formed. Is produced by performing a re-orientation treatment in which the liquid crystal 9 is gradually cooled to a temperature in the range of an antiferroelectric phase, and the re-orientation treatment causes the alignment state of the liquid crystal 9 to be aligned in an orderly layered structure. Become.

【0019】また、この反強誘電性液晶表示素子の両面
側にはそれぞれ偏光板10,11が配置されており、こ
れら偏光板10,11は、その透過軸を上記反強誘電性
液晶9がもっているスメクティック層構造の法線に対し
てほぼ直交させるかあるいはほぼ平行にし、かつ両偏光
板10,11の透過軸を互いにほぼ直交させて設けられ
ている。
Polarizing plates 10 and 11 are arranged on both sides of the antiferroelectric liquid crystal display element, and the transmission axes of the polarizing plates 10 and 11 are the antiferroelectric liquid crystal 9 described above. The polarizing plates 10 and 11 are provided so as to be substantially orthogonal or substantially parallel to the normal line of the smectic layer structure, and the transmission axes of the polarizing plates 10 and 11 are substantially orthogonal to each other.

【0020】次に、上記反強誘電性液晶表示素子の両基
板1,2に形成した透明電極(画素電極と対向電極)
3,5について説明すると、この透明電極3,5は、基
板1,2上にITO等からなる透明導電膜をスパッタ装
置により成膜し、この透明導電膜をフォトリソグラフィ
法によりパターニングして形成されたものであり、これ
ら電極3,5の表面粗さは、電極表面を任意の方向に走
査したときの少なくとも500nmの走査距離における
走査軌跡上の最も高い凸部と最も低い凹部との高低差が
20nm以下の粗さとなっている。
Next, the transparent electrodes (pixel electrode and counter electrode) formed on both the substrates 1 and 2 of the antiferroelectric liquid crystal display device.
3 and 5, the transparent electrodes 3 and 5 are formed by forming a transparent conductive film made of ITO or the like on the substrates 1 and 2 by a sputtering apparatus and patterning the transparent conductive film by photolithography. The surface roughness of these electrodes 3 and 5 is such that the height difference between the highest convex portion and the lowest concave portion on the scanning locus at a scanning distance of at least 500 nm when the electrode surface is scanned in an arbitrary direction. The roughness is 20 nm or less.

【0021】図2は、上記配列規制膜7を形成する下基
板2に形成した対向電極5の任意の直線上における表面
状態を原子間力顕微鏡(AFM)によって観察した表面
粗さを示しており、前記対向電極5の表面は図のような
凹凸をもっているが、少なくとも500nmの走査距離
L内にある走査軌跡上の最も高い凸部Aと最も低い凹部
Bとの高低差hは20nm以下であり、したがって前記
対向電極5は、表面粗さが小さい平滑度の高い電極とな
っている。これは、上基板1に形成した画素電極3も同
様である。
FIG. 2 shows the surface roughness of the counter electrode 5 formed on the lower substrate 2 on which the array regulating film 7 is formed, observed on an arbitrary straight line by an atomic force microscope (AFM). The surface of the counter electrode 5 has irregularities as shown in the figure, but the height difference h between the highest convex portion A and the lowest concave portion B on the scanning locus within the scanning distance L of at least 500 nm is 20 nm or less. Therefore, the counter electrode 5 is an electrode having small surface roughness and high smoothness. The same applies to the pixel electrode 3 formed on the upper substrate 1.

【0022】なお、このような表面粗さの透明電極3,
5は、上述したスパッタ装置による透明導電膜の成膜に
際してスパッタ条件を選ぶことにより得ることができ
る。そして、上記反強誘電性液晶表示素子においては、
その両基板1,2の透明電極3,5を、少なくとも50
0nmの走査距離における走査軌跡上の最も高い凸部と
最も低い凹部との高低差が20nm以下である表面粗さ
の電極としているため、その上に形成した配向膜6,7
の膜面の平滑度が高く、したがって、両基板1,2の配
向膜6,7により水平配向されるとともに、これら配向
膜6,7のうちの下基板2側の配向膜(配列規制膜)7
によって配列状態を規制される液晶分子が、乱れのほと
んどない良好な配列状態で配列し、液晶分子が第3の安
定状態(無電界時または弱い電界が印加されたときの状
態)に配列したOFF状態(暗表示状態)での漏光が少
なくなる。
The transparent electrodes 3 having such a surface roughness
5 can be obtained by selecting the sputtering conditions when forming the transparent conductive film by the above-described sputtering apparatus. And, in the antiferroelectric liquid crystal display element,
At least 50 transparent electrodes 3 and 5 on both substrates 1 and 2
Since the height difference between the highest convex portion and the lowest concave portion on the scanning locus at a scanning distance of 0 nm is 20 nm or less, the alignment film 6, 7 formed on the electrode has a surface roughness of 20 nm or less.
Has a high smoothness, and is therefore horizontally aligned by the alignment films 6 and 7 of both substrates 1 and 2, and the alignment film on the lower substrate 2 side (alignment regulating film) of these alignment films 6 and 7. 7
The liquid crystal molecules whose alignment state is regulated by are aligned in a good alignment state with almost no disturbance, and the liquid crystal molecules are aligned in the third stable state (state when no electric field or weak electric field is applied) OFF Light leakage in the state (dark display state) is reduced.

【0023】図3は上記反強誘電性液晶表示素子のOF
F状態における暗表示の一部分を拡大して示しており、
図において白く見える部分が漏光を生じている部分であ
る。なお、図3に示した漏光は、両基板1,2の配向膜
6,7の膜厚をそれぞれ50nmとしたときのものであ
る。
FIG. 3 shows the OF of the above-mentioned antiferroelectric liquid crystal display device.
A part of the dark display in the F state is shown enlarged.
The white portion in the figure is the portion where light leakage occurs. The light leakage shown in FIG. 3 is obtained when the thicknesses of the alignment films 6 and 7 of the substrates 1 and 2 are 50 nm, respectively.

【0024】このOFF状態での漏光を従来の反強誘電
性液晶表示素子について見ると、図4は、従来の反強誘
電性液晶表示素子の両基板に形成されている透明電極の
任意の直線上における表面状態を原子間力顕微鏡で観察
した表面粗さを示している。
Looking at the leakage of light in the OFF state in the conventional anti-ferroelectric liquid crystal display element, FIG. 4 shows an arbitrary straight line of transparent electrodes formed on both substrates of the conventional anti-ferroelectric liquid crystal display element. The surface roughness obtained by observing the surface state above with an atomic force microscope is shown.

【0025】この図4と図2とを比較して見れば分かる
ように、従来の反強誘電性液晶表示素子における透明電
極は、その表面粗さが大きく、したがってその上に形成
した配向膜の膜面の平滑度が低いため、液晶分子の配列
状態に乱れが生じ、この配列状態の乱れが、OFF状態
での漏光の発生原因となる。
As can be seen by comparing FIG. 4 with FIG. 2, the transparent electrode in the conventional antiferroelectric liquid crystal display element has a large surface roughness, and therefore the alignment film formed thereon has a large surface roughness. Since the smoothness of the film surface is low, the alignment state of the liquid crystal molecules is disturbed, and this disturbance of the alignment state causes light leakage in the OFF state.

【0026】図5は、上記実施例の液晶表示素子と同様
なアクティブマトリックス型のものであり、かつ、対向
電極を形成した基板上の配向膜を液晶分子の配列状態を
規制する配列規制膜とし、他方の基板上の配向膜は液晶
分子の配列規制機能をもたない非配列規制膜とするとと
もに、両基板の配向膜の膜厚をそれぞれ50nmとした
従来の反強誘電性液晶表示素子のOFF状態における暗
表示の一部分を拡大して示しており、図において白く見
える部分が漏光を生じている部分である。
FIG. 5 shows an active matrix type similar to the liquid crystal display element of the above embodiment, and the alignment film on the substrate on which the counter electrode is formed is an alignment control film for controlling the alignment state of liquid crystal molecules. In the conventional anti-ferroelectric liquid crystal display device, the alignment film on the other substrate is a non-alignment control film that does not have the alignment control function of liquid crystal molecules, and the thickness of the alignment films on both substrates is 50 nm. A part of dark display in the OFF state is shown in an enlarged manner, and a white portion in the figure is a portion where light leakage occurs.

【0027】この図5と図3とを比較して見れば明らか
なように、従来の反強誘電性液晶表示素子は、OFF状
態における暗表示を拡大して見たときの単位面積当りの
漏光箇所数が図5のように多く、したがって、暗表示全
体が白味を帯びた黒色に見えて、ON状態とOFF状態
との表示の明るさの比が30:1程度の低いコントラス
トしか得られない。
As is clear from a comparison between FIG. 5 and FIG. 3, the conventional antiferroelectric liquid crystal display element shows the leakage of light per unit area when the dark display in the OFF state is enlarged and viewed. The number of places is large as shown in FIG. 5, and therefore, the entire dark display looks like whitish black, and the display brightness ratio between the ON state and the OFF state is only about 30: 1, which is low contrast. Absent.

【0028】これに対して、上記実施例の反強誘電性液
晶表示素子は、OFF状態における暗表示を拡大して見
たときの単位面積当りの漏光箇所数が図3のように極端
に少なくなっており、したがって、暗表示全体がほとん
ど黒色に見えるため、ON状態とOFF状態との表示の
明るさの比が大きい、高コントラストの表示が得られ
る。
On the other hand, in the antiferroelectric liquid crystal display element of the above-mentioned embodiment, the number of light leakage spots per unit area when the dark display in the OFF state is enlarged and seen is extremely small as shown in FIG. Therefore, since the entire dark display looks almost black, it is possible to obtain a high-contrast display with a large display brightness ratio between the ON state and the OFF state.

【0029】この反強誘電性液晶表示素子のON状態と
OFF状態との表示の明るさの比は、約95:1〜11
0:1であり、従来の反強誘電性液晶表示素子(コント
ラスト30:1程度)に比べて、3倍以上の高いコント
ラストをもっている。
The display brightness ratio between the ON state and the OFF state of this antiferroelectric liquid crystal display element is approximately 95: 1 to 11
It is 0: 1, and has a contrast three times or more higher than that of a conventional antiferroelectric liquid crystal display device (contrast about 30: 1).

【0030】すなわち、上記反強誘電性液晶表示素子
は、両基板1,2の透明電極3,5を、その表面を任意
の方向に走査したときの少なくとも500nmの走査距
離における走査軌跡上の最も高い凸部と最も低い凹部と
の高低差が20nm以下の表面粗さをもつ電極としたも
のであるから、両基板1,2の配向膜6,7により水平
配向されるとともに、これら配向膜6,7のうちの下基
板2側の配向膜(配列規制膜)7によって配列状態を規
制される液晶分子を乱れのほとんどない良好な配列状態
で配列させて、液晶分子が第3の安定状態に配列したO
FF状態での漏光を少なくし、ON状態とOFF状態と
の表示の明るさの比が大きい、高コントラストの表示を
得ることができる。
That is, in the antiferroelectric liquid crystal display device, the transparent electrodes 3 and 5 of the substrates 1 and 2 are most scanned on the scanning locus at a scanning distance of at least 500 nm when the surfaces thereof are scanned in an arbitrary direction. Since the height difference between the high convex portion and the lowest concave portion is an electrode having a surface roughness of 20 nm or less, it is horizontally aligned by the alignment films 6 and 7 of both substrates 1 and 2 and these alignment films 6 are formed. , 7 are arranged in a good alignment state in which the alignment state is regulated by the alignment film (alignment regulating film) 7 on the lower substrate 2 side, the liquid crystal molecules are brought into the third stable state. Arranged O
It is possible to reduce light leakage in the FF state and obtain a high-contrast display with a large display brightness ratio between the ON state and the OFF state.

【0031】なお、上記実施例では、下基板2上の配列
規制膜7を、ラビング処理膜したポリイミド膜とした
が、この配列規制膜7は、基板2上にポリイミド前駆体
の単分子膜をLB(ラングミュア・ブロジット)法によ
り所要層に積層してこの積層膜をイミド化処理したLB
膜等であってもよい。
In the above embodiment, the arrangement regulating film 7 on the lower substrate 2 is a rubbing-treated polyimide film, but the arrangement regulating film 7 is a monomolecular film of a polyimide precursor on the substrate 2. LB obtained by laminating the laminated film on the required layer by the LB (Langmuir-Brogit) method
It may be a film or the like.

【0032】また、上記実施例では、液晶分子の配列規
制機能をもたない非配列規制膜6の下の透明電極(上基
板1の画素電極)3も、その表面を任意の方向に走査し
たときの少なくとも500nmの走査距離における走査
軌跡上の最も高い凸部と最も低い凹部との高低差が20
nm以下の表面粗さをもつ電極としているが、非配列規
制膜6の下の透明電極3は、必ずしも上記のような表面
粗さの電極でなくてもよい。
Further, in the above embodiment, the surface of the transparent electrode (pixel electrode of the upper substrate 1) 3 below the non-alignment regulating film 6 which does not have the alignment regulating function of liquid crystal molecules is also scanned in an arbitrary direction. At this time, the height difference between the highest convex portion and the lowest concave portion on the scanning locus at a scanning distance of at least 500 nm is 20.
Although the electrode has a surface roughness of nm or less, the transparent electrode 3 below the non-alignment regulating film 6 does not necessarily have to have the surface roughness as described above.

【0033】さらに、上記実施例の反強誘電性液晶表示
素子はアクティブマトリックス型のものであるが、本発
明は、例えば単純マトリックス型等の反強誘電性液晶表
示素子にも適用できる。
Further, although the antiferroelectric liquid crystal display element of the above embodiment is of the active matrix type, the present invention can be applied to, for example, a simple matrix type antiferroelectric liquid crystal display element.

【0034】また、本発明は、両方の基板の配向膜をそ
れぞれ配列規制膜としている反強誘電性液晶表示素子に
も適用できるもので、その場合は、両方の基板の透明電
極を上記のような表面粗さの電極とすればよい。
The present invention can also be applied to an antiferroelectric liquid crystal display device in which the alignment films of both substrates are used as the alignment control films, and in that case, the transparent electrodes of both substrates are as described above. An electrode having various surface roughness may be used.

【0035】[0035]

【発明の効果】本発明の反強誘電性液晶表示素子は、少
なくとも一方の基板の水平配向膜が、液晶分子の配列状
態を規制する配列規制膜であり、かつ前記配列規制膜の
下の透明電極が、その表面を任意の方向に走査したとき
の少なくとも500nmの走査距離における走査軌跡上
の最も高い凸部と最も低い凹部との高低差が20nm以
下の表面粗さをもつ電極であることを特徴とするもので
あるから、前記配列規制膜によって配列状態を規制され
る液晶分子を乱れのほとんどない良好な配列状態で配列
させて、液晶分子が第3の安定状態に配列したOFF状
態での漏光を少なくし、ON状態とOFF状態との表示
の明るさの比が大きい、高コントラストの表示を得るこ
とができる。
In the antiferroelectric liquid crystal display device of the present invention, the horizontal alignment film on at least one substrate is an alignment control film for controlling the alignment state of liquid crystal molecules, and the transparent film under the alignment control film is transparent. The electrode is an electrode having a surface roughness in which the height difference between the highest convex portion and the lowest concave portion on the scanning locus at a scanning distance of at least 500 nm when the surface is scanned in an arbitrary direction is 20 nm or less. Therefore, the liquid crystal molecules whose alignment state is regulated by the alignment regulation film are aligned in a good alignment state with almost no disturbance, and the liquid crystal molecules are aligned in the third stable state in the OFF state. It is possible to obtain a high-contrast display in which light leakage is reduced and the display brightness ratio between the ON state and the OFF state is large.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す反強誘電性液晶表示素
子の断面図。
FIG. 1 is a sectional view of an antiferroelectric liquid crystal display element showing an embodiment of the present invention.

【図2】同じく配列規制膜を形成する下基板に形成した
対向電極の任意の直線上における表面状態を原子間力顕
微鏡によって観察した表面粗さを示す図。
FIG. 2 is a diagram showing a surface roughness of an opposing electrode formed on a lower substrate on which an array control film is formed, which is observed on an arbitrary straight line by an atomic force microscope.

【図3】同じく反強誘電性液晶表示素子のOFF状態に
おける暗表示の一部分を拡大して示す図。
FIG. 3 is an enlarged view showing a part of dark display in the OFF state of the antiferroelectric liquid crystal display element.

【図4】従来の反強誘電性液晶表示素子の両基板に形成
されている透明電極の任意の直線上における表面状態を
原子間力顕微鏡で観察した表面粗さを示す図。
FIG. 4 is a diagram showing a surface roughness of a transparent electrode formed on both substrates of a conventional anti-ferroelectric liquid crystal display element, observed on an arbitrary straight line with an atomic force microscope.

【図5】従来の反強誘電性液晶表示素子のOFF状態に
おける暗表示の一部分を拡大して示す図。
FIG. 5 is an enlarged view showing a part of dark display in a conventional anti-ferroelectric liquid crystal display element in an OFF state.

【符号の説明】[Explanation of symbols]

1,2…透明基板 3…画素電極 4…能動素子 5…対向電極 6…水平配向膜(非配列規制膜) 7…水平配向膜(配列規制膜) 9…反強誘電性液晶 10,11…偏光板 1, 2 ... Transparent substrate 3 ... Pixel electrode 4 ... Active element 5 ... Counter electrode 6 ... Horizontal alignment film (non-alignment regulating film) 7 ... Horizontal alignment film (alignment regulating film) 9 ... Antiferroelectric liquid crystal 10, 11 ... Polarizer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】一面に透明電極を形成しその上に水平配向
膜を設けた一対の透明基板をその電極形成面を互いに対
向させて配置し、この両基板間に反強誘電性液晶を封入
した反強誘電性液晶表示素子であって、 少なくとも一方の基板の水平配向膜が、液晶分子の配列
状態を規制する配列規制膜であり、かつ前記配列規制膜
の下の透明電極が、その表面を任意の方向に走査したと
きの少なくとも500nmの走査距離における走査軌跡
上の最も高い凸部と最も低い凹部との高低差が20nm
以下の表面粗さをもつ電極であることを特徴とする反強
誘電性液晶表示素子。
1. A pair of transparent substrates, each having a transparent electrode formed on one surface and a horizontal alignment film formed thereon, are arranged such that their electrode forming surfaces face each other, and an antiferroelectric liquid crystal is sealed between the two substrates. In the antiferroelectric liquid crystal display element, the horizontal alignment film of at least one substrate is an alignment control film that controls the alignment state of liquid crystal molecules, and the transparent electrode under the alignment control film has a surface thereof. The height difference between the highest convex portion and the lowest concave portion on the scanning locus at a scanning distance of at least 500 nm when scanning is performed in any direction is 20 nm.
An antiferroelectric liquid crystal display device, which is an electrode having the following surface roughness.
JP22690393A 1993-09-13 1993-09-13 Antiferroelectric liquid crystal display device Pending JPH0784271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22690393A JPH0784271A (en) 1993-09-13 1993-09-13 Antiferroelectric liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22690393A JPH0784271A (en) 1993-09-13 1993-09-13 Antiferroelectric liquid crystal display device

Publications (1)

Publication Number Publication Date
JPH0784271A true JPH0784271A (en) 1995-03-31

Family

ID=16852408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22690393A Pending JPH0784271A (en) 1993-09-13 1993-09-13 Antiferroelectric liquid crystal display device

Country Status (1)

Country Link
JP (1) JPH0784271A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0782039A2 (en) * 1995-12-27 1997-07-02 Canon Kabushiki Kaisha Display device and process for producing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0782039A2 (en) * 1995-12-27 1997-07-02 Canon Kabushiki Kaisha Display device and process for producing same

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