JPH0793295B2 - Method for forming insulating film of thin film device - Google Patents
Method for forming insulating film of thin film deviceInfo
- Publication number
- JPH0793295B2 JPH0793295B2 JP1919892A JP1919892A JPH0793295B2 JP H0793295 B2 JPH0793295 B2 JP H0793295B2 JP 1919892 A JP1919892 A JP 1919892A JP 1919892 A JP1919892 A JP 1919892A JP H0793295 B2 JPH0793295 B2 JP H0793295B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- high frequency
- insulating film
- film forming
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010408 film Substances 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 20
- 239000010409 thin film Substances 0.000 title claims description 10
- 239000002994 raw material Substances 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010574 gas phase reaction Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910018173 Al—Al Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＬＳＩ等の薄膜デバイ
スにおける例えばＡｌ−Ａｌ間の層間絶縁膜、パッシベ
ーション膜の如き薄膜デバイスにおける絶縁膜の形成方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an insulating film in a thin film device such as an Al-Al interlayer insulating film or a passivation film in a thin film device such as an LSI.
【０００２】[0002]
【従来の技術】薄膜デバイスにおけるＳｉＯ2 等からな
る各種絶縁膜の形成方法としては、ＳｉＨ4 −Ｏ2 系熱
ＣＶＤによる方法、プラズマＣＶＤによる方法がよく知
られている。しかし、ＳｉＨ4 −Ｏ2 系熱ＣＶＤ法によ
る場合は、反応がＡｌ配線等に悪影響を与える高温で進
むという問題がある。また、反応が気相反応で進行する
ため、絶縁膜を形成すべき物品（以下、「膜形成物」と
いう。）の表面に反応種が降り注ぎ堆積する。そのた
め、薄膜デバイスの各層を精度よくコンパクトに積層し
ていく等のために膜形成物表面の凹凸段差を滑らかに被
覆する、いわゆるステップカバリッジの点で劣るという
問題がある。 2. Description of the Related Art As a method of forming various insulating films made of SiO 2 or the like in a thin film device, SiH 4 —O 2 system thermal CVD and plasma CVD are well known. However, in the case of using the SiH 4 —O 2 system thermal CVD method, there is a problem that the reaction proceeds at a high temperature which adversely affects the Al wiring and the like. In addition, since the reaction proceeds in a gas phase reaction, the reactive species are deposited and deposited on the surface of the article (hereinafter, referred to as “film-formed product”) on which the insulating film is to be formed. Therefore, there is a problem in that so-called step coverage is inferior in that the uneven steps on the surface of the film formation are smoothly covered in order to accurately and compactly stack the layers of the thin film device.
【０００３】ＳｉＨ4 −Ｏ2 系ＣＶＤを比較的低温で行
うことも考えられるが、気相反応であることに変わりは
なく、ステップカバリッジの点で劣ることは避けられな
い。また、従来のプラズマＣＶＤ法による場合も同様に
ステップカバリッジの点で劣るという問題がある。さら
に、ＳｉＨ4 は発火の危険性のある取扱い上危険な物質
であるという問題もある。Although it is possible to carry out SiH 4 --O 2 system CVD at a relatively low temperature, it is inevitable that it is a gas phase reaction, and inferior step coverage is unavoidable. Further, also in the case of the conventional plasma CVD method, there is a problem that the step coverage is also inferior. Further, there is a problem that SiH 4 is a dangerous material for handling with a risk of ignition.
【０００４】そこで、近年では、ＴＥＯＳ（テトラエト
キシンシラン）で代表される有機シランを用いることが
提案されている。ＴＥＯＳで代表される有機シランは、
常温で液体であるから取扱上安全であることに加え、例
えばＴＥＯＳをプラズマ中で分解して低温でＳｉＯ2 膜
を形成することや、ＴＥＯＳ−Ｏ3 系のガスを原料とす
る常圧ＣＶＤ法により低温でＳｉＯ2 膜を形成すること
ができるほか、ステップカバリッジの点でも比較的優れ
ているという利点がある。Therefore, in recent years, it has been proposed to use an organic silane represented by TEOS (tetraethoxysilane). Organosilane represented by TEOS is
In addition to being safe in handling because it is liquid at room temperature, for example, TEOS is decomposed in plasma to form a SiO 2 film at low temperature, and a normal pressure CVD method using TEOS-O 3 gas as a raw material. Thus, the SiO 2 film can be formed at a low temperature, and the step coverage is relatively excellent.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、ＬＳＩ
等薄膜デバイスの微細構造が進むなか、有機シランをＣ
ＶＤ用の材料として用いる絶縁膜形成方法によっても、
膜形成物上のパターン密度によっては絶縁膜の埋め込み
深さが変化し、平坦化が困難であるという問題があり、
より一層ステップカバリッジの点で優れた方法が求めら
れているのが実情である。また、より高速で成膜できる
方法が求められている。However, the LSI
As the fine structure of thin film devices such as
Depending on the insulating film forming method used as the material for VD,
There is a problem that the embedding depth of the insulating film changes depending on the pattern density on the film-formed product, making it difficult to flatten,
In reality, there is a need for a method that is even better in terms of step coverage. There is also a demand for a method capable of forming a film at a higher speed.
【０００６】そこで本発明は、薄膜デバイスの絶縁膜形
成方法であって、比較的低温で、しかも従来よりもステ
ップカバリッジにすぐれ、より平坦な絶縁膜を従来より
高速で形成することができる方法を提供することを目的
とする。Therefore, the present invention is a method for forming an insulating film for a thin film device, which is a method capable of forming a flatter insulating film at a relatively low temperature, which has better step coverage than the conventional method and which is faster than the conventional method. The purpose is to provide.
【０００７】[0007]
【課題を解決するための手段】本発明は前記目的に従
い、有機シラン−Ｏ2 系ガスを原料ガスとするプラズマ
ＣＶＤ法を採用し、前記原料ガスのプラズマ化をパルス
変調をかけた高周波電力の印加により行い、該高周波電
力の印加とともに絶縁膜を形成すべき物品に高周波バイ
アスを印加することを特徴とする薄膜デバイスの絶縁膜
形成方法を提供するものである。According to the above-mentioned object, the present invention adopts a plasma CVD method using an organic silane-O 2 -based gas as a raw material gas, and a high frequency power of a high frequency power obtained by applying pulse modulation to the plasma of the raw material gas is adopted. The present invention provides a method for forming an insulating film in a thin film device, which comprises applying a high-frequency bias to the article on which the insulating film is to be formed, by applying the high-frequency power.
【０００８】前記有機シランとしては、代表的にはＴＥ
ＯＳ（テトラエトキシシラン）を挙げることができる
が、ＴＥＳ（テトラエチルシラン）等の他の有機シラン
でもよい。前記パルス変調条件には特に限定はないが、
ステップカバリッジを向上させる観点から、例えば１〜
１０００Ｈｚの条件が考えられる。前記膜形成物への高
周波バイアスの印加は、代表的には、原料ガスプラズマ
化のための高周波入力のオン時間の立ち上がりと同時又
は略同時に始まり、該オン時間の終了と共に又はそれよ
り若干遅れて終了することの繰り返しが考えられる。As the above-mentioned organic silane, TE is typically used.
Although OS (tetraethoxysilane) can be mentioned, other organic silanes such as TES (tetraethylsilane) may be used. The pulse modulation condition is not particularly limited,
From the viewpoint of improving the step coverage, for example, 1 to
A condition of 1000 Hz can be considered. The application of the high frequency bias to the film forming material typically starts at the same time or almost the same time as the rising of the on-time of the high-frequency input for making the source gas plasma, and at the end of the on-time or slightly later. It is conceivable to repeat the termination.
【０００９】[0009]
【作用】本発明方法によると、比較的低温で成膜され、
しかも原料ガスのプラズマ化がパルス変調をかけた高周
波電力の印加、換言すれば、断続的な高周波電力の印加
により行われ、プラズマの発生、停止が繰り返されるの
で、反応種が膜形成物表面から離れた位置で生成される
気相反応があるほか、プラズマの停止時に原料ガスが膜
形成物表面近く及び（又は）膜形成物表面上に達し、引
き続きこれがプラズマ化されることで、反応種が膜形成
物表面及び（又は）その近くでも生成されるいわゆる表
面反応も発生する結果となり、その表面反応により、成
膜が滑らかに、より平坦に行われる。According to the method of the present invention, a film is formed at a relatively low temperature,
Moreover, plasma conversion of the source gas is performed by applying pulse-modulated high-frequency power, in other words, by intermittently applying high-frequency power, and plasma is repeatedly generated and stopped, so that the reactive species are generated from the surface of the film forming material. In addition to the gas phase reaction generated at a distant position, when the plasma is stopped, the raw material gas reaches near the surface of the film forming material and / or on the surface of the film forming material, which is subsequently turned into plasma, whereby reactive species are generated. As a result, a so-called surface reaction is also generated which is generated on and / or near the surface of the film forming product, and the surface reaction allows the film to be formed smoothly and more evenly.
【００１０】また、パルス変調をかけた高周波電力の印
加とともに膜形成物に高周波バイアスが印加されるの
で、膜形成物へのイオン照射が起こり、それだけ高速で
成膜される。Further, since the high frequency bias is applied to the film forming material together with the application of the high frequency power subjected to the pulse modulation, the film forming material is irradiated with ions, and the film is formed at a higher speed.
【００１１】[0011]
【実施例】以下、本発明の実施例を図面を参照して説明
する。図１は本発明方法の実施に使用するプラズマＣＶ
Ｄ装置の一例の概略構成を示している。図示の装置は、
成膜室１、成膜室１に電磁弁２１を介して接続された排
気ポンプ２、成膜室１内に対向設置された電極３、４、
成膜室１に流量コントローラ５１及び電磁弁５２を介し
て接続された酸素ガスボンベ５、成膜室１に流量コント
ローラ６１、電磁弁６２を介して接続されたＴＥＯＳ
（テトラエトキシシラン）ボンベ６、ボンベ６から成膜
室１に連通する部分を加熱してＴＥＯＳを気化するため
のヒータ７を備えている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a plasma CV used for carrying out the method of the present invention.
The schematic structure of an example of D apparatus is shown. The device shown is
A film forming chamber 1, an exhaust pump 2 connected to the film forming chamber 1 via a solenoid valve 21, electrodes 3 and 4 facing each other in the film forming chamber 1,
An oxygen gas cylinder 5 connected to the film forming chamber 1 via a flow rate controller 51 and a solenoid valve 52, and a TEOS connected to the film forming chamber 1 via a flow rate controller 61 and a solenoid valve 62.
A (tetraethoxysilane) cylinder 6 and a heater 7 for vaporizing TEOS by heating a portion communicating from the cylinder 6 to the film forming chamber 1 are provided.
【００１２】電極４は高周波電極であり、これにはマッ
チングボックス８を介して高周波電源９から高周波電力
が印加される。電源９は、任意の高周波パルス変調が可
能な高周波信号発生器９１及び高周波増幅器（ＲＦパワ
ーアンプ）９２を有しており、所定周波数数の高周波
（図２の（Ａ）図参照）に所望のパルス変調をかけた高
周波（図２の（Ｂ）図参照）を印加できるように構成し
てある。The electrode 4 is a high frequency electrode, to which high frequency power is applied from a high frequency power source 9 via a matching box 8. The power supply 9 has a high-frequency signal generator 91 and a high-frequency amplifier (RF power amplifier) 92 capable of arbitrary high-frequency pulse modulation, and has a desired number of high frequencies (see FIG. 2A). It is configured such that a high frequency pulse-modulated (see FIG. 2B) can be applied.
【００１３】電極３には成膜温度調節用のヒータ３１が
付設されている。また、この電極３には高周波電源１０
が接続されており、電源１０は、電極３上に設置される
膜形成物Ｐに高周波バイアス（ＲＦバイアス）を、電源
９による高周波入力のオン時間の立ち上がりと同時に印
加し、該オン時間の終了より若干遅れて印加終了するよ
うに構成してある（図２の（Ｃ）参照）。A heater 31 for adjusting the film forming temperature is attached to the electrode 3. In addition, the electrode 3 has a high frequency power source 10
Is connected, and the power source 10 applies a high frequency bias (RF bias) to the film forming object P placed on the electrode 3 at the same time as the on time of the high frequency input by the power source 9 rises, and the on time ends. The configuration is such that the application is completed with a slight delay (see FIG. 2C).
【００１４】なお、酸素ガス及びＴＥＯＳガスは高周波
電極４の一部を構成して室１外へ突出している管状部分
１１から室内へ供給される。以上説明した装置による
と、本発明方法は次のように実施される。先ず、絶縁膜
を形成すべき膜形成物Ｐを電極３上に設置し、しかるの
ち、弁２１を開き、排気ポンプ２にて成膜室１内を真空
引きし、さらに弁５２の開成と、流量コントローラ５１
による流量制御のもとに酸素ガスボンベ６から成膜室１
内へ所定量の酸素ガスを導入するとともに、弁６２の開
成と流量コントローラ６１の流量制御のもとに、且つ、
ヒータ７にて加熱しつつ、ＴＥＯＳボンベ６から所定量
のＴＥＯＳガスを成膜室１へ導入する。また、電極３付
設のヒータ３１にて膜形成物Ｐを所定成膜温度に制御す
る。The oxygen gas and the TEOS gas are supplied into the room from a tubular portion 11 which constitutes a part of the high frequency electrode 4 and projects outside the room 1. According to the apparatus described above, the method of the present invention is carried out as follows. First, the film formation product P on which an insulating film is to be formed is placed on the electrode 3, and then the valve 21 is opened, the film formation chamber 1 is evacuated by the exhaust pump 2, and the valve 52 is opened. Flow controller 51
From the oxygen gas cylinder 6 to the film forming chamber 1 under the flow rate control by
Introducing a predetermined amount of oxygen gas into the inside of the chamber, opening the valve 62 and controlling the flow rate of the flow rate controller 61, and
A predetermined amount of TEOS gas is introduced from the TEOS cylinder 6 into the film forming chamber 1 while being heated by the heater 7. Further, the film formation product P is controlled to a predetermined film formation temperature by the heater 31 attached to the electrode 3.
【００１５】かくして成膜室１内を所定成膜真空度に維
持しつつ、電源９にて所定パルス変調をかけた高周波電
力を印加することで（ＴＥＯＳ＋Ｏ2 ）ガスをプラズマ
化するとともに、該高周波電力の印加に伴って膜形成物
Ｐに電源１０より高周波バイアスを印加し、比較的低温
下で膜形成物Ｐ表面に絶縁性のＳｉＯ2 膜を形成させ
る。Thus, while the inside of the film forming chamber 1 is maintained at the predetermined film forming vacuum degree, the high frequency power subjected to the predetermined pulse modulation is applied by the power source 9 to convert the (TEOS + O 2 ) gas into the plasma and the high frequency. A high-frequency bias is applied from the power source 10 to the film forming product P in accordance with the application of electric power to form an insulating SiO 2 film on the surface of the film forming product P at a relatively low temperature.
【００１６】前記成膜中、原料ガスにはパルス変調され
た高周波電力が印加されるので、気相反応だけでなく表
面反応も進行し、従って、膜形成物Ｐへの成膜は物Ｐか
ら離れた位置からの反応種の降り注ぎによるだけでな
く、物Ｐ表面及び（又は）それに近い位置からの反応種
の供給によってもなされ、その結果、全体として、成膜
はステップカバリッジに優れた滑らかな平坦化された状
態で行われる。Since pulse-modulated high-frequency power is applied to the raw material gas during the film formation, not only the gas phase reaction but also the surface reaction progresses. Therefore, the film formation on the film formation product P is performed from the product P. Not only by the reactive species pouring from a remote position, but also by supplying the reactive species from the surface of the object P and / or a position close thereto, as a result, the film formation as a whole is excellent in step coverage and smooth. It is performed in a flattened state.
【００１７】また、膜形成物Ｐに高周波バイアスが印加
されることで、該膜形成物へのイオン照射も起こり、こ
のイオンアシスト効果によりそれだけ低温で速く成膜さ
れる。以上説明した方法により次の具体的条件でＳｉＯ
2 絶縁膜を形成したところ、図３の（Ｂ）図のように成
膜され、パルス変調なしの高周波電力で原料ガスをプラ
ズマ化し、膜形成物には高周波バイアスを印加しない場
合の成膜（図３の（Ａ）図参照）に比べ、膜平坦度は、
図中Ｄ部分でII／Ｉ＝約１．５倍以上になった。また、
成膜速度も従来法では６００Å／ｍｉｎであったものが
１０００Å／ｍｉｎとなり約１．５倍以上に改良され
た。（成膜条件） 成膜真空度 ：５００ｍＴｏｒｒ 高周波電源 ：１３．５６ＭＨｚ、１００Ｗ パルス変調周期：５００Ｈｚ ＲＦバイアス ：１３．５６ＭＨｚ、５０Ｗ オン時間Ｔ１／オフ時間Ｔ２ ６０％ 成膜ガス ：ＴＥＯＳ ６〜１０ｃｃｍ Ｏ2 １００〜２００ｃｃｍ 膜形成物Ａ ：１００ｍｍ角ガラス基板使用 表面パターンは図３のもので Ａ＝１μｍ、Ｂ＝１μｍ、Ｃ＝１μｍ、Ｄ＝５μｍ 成膜温度 ：３５０℃ （膜形成物温度）なお、本発明は、前記実施例に限定さ
れるものではなく、膜形成物がＮ型Ｓｉウエハ（１〜５
Ωｃｍ）基板等を採用したものについても適用でき、ま
た例えば、成膜真空度を０．１〜２Ｔｏｒｒ、プラズマ
化用高周波電力を５０〜２５０Ｗ、ＲＦバイアスを１０
〜２００Ｗ、Ｔ１／Ｔ２＝１０〜１００％の範囲で種々
変化させることなども考えられる。Further, when a high frequency bias is applied to the film-formed product P, ion irradiation is also applied to the film-formed product P, and the ion assist effect allows the film to be formed faster at a lower temperature. According to the method described above, SiO under the following specific conditions:
2 When the insulating film is formed, it is formed as shown in FIG. 3B, and the raw material gas is turned into plasma with high frequency power without pulse modulation, and the high frequency bias is not applied to the film formation ( As compared with FIG. 3A), the film flatness is
II / I = about 1.5 times or more in the D portion in the figure. Also,
The film-forming speed was 1,000 Å / min, which was 600 Å / min in the conventional method, but improved by about 1.5 times or more. (Film forming conditions) Film forming vacuum degree: 500 mTorr High frequency power source: 13.56 MHz, 100 W Pulse modulation cycle: 500 Hz RF bias: 13.56 MHz, 50 W ON time T1 / OFF time T2 60% Film forming gas: TEOS 6-10 ccm O 2 100 to 200 ccm Film-formed product A: 100 mm square glass substrate is used. The surface pattern is that shown in FIG. 3. A = 1 μm, B = 1 μm, C = 1 μm, D = 5 μm Film-forming temperature: 350 ° C. (film-formed product temperature) The present invention is not limited to the above-mentioned embodiment, and the film-formed product is an N-type Si wafer (1 to 5).
Ωcm) substrate or the like can also be applied, and for example, the film forming vacuum degree is 0.1 to 2 Torr, the high frequency power for plasma generation is 50 to 250 W, and the RF bias is 10.
It is also possible to change variously within a range of up to 200 W and T1 / T2 = 10 to 100%.
【００１８】[0018]
【発明の効果】以上説明したように本発明によると、薄
膜デバイスの絶縁膜形成方法であって、比較的低温で、
しかも従来よりもステップカバリッジにすぐれ、より平
坦な絶縁膜を従来より高速で形成できる方法を提供する
ことができる。As described above, according to the present invention, there is provided a method for forming an insulating film of a thin film device, the method comprising:
Moreover, it is possible to provide a method capable of forming a flatter insulating film, which has better step coverage than the conventional one and is faster than the conventional one.
【図１】本発明方法の実施に使用するプラズマＣＶＤ装
置の１例の概略構成図である。FIG. 1 is a schematic configuration diagram of an example of a plasma CVD apparatus used for carrying out the method of the present invention.
【図２】図（Ａ）はパルス変調をかけない高周波の、図
（Ｂ）はパルス変調をかけた本発明に係る高周波の、図
（Ｃ）はＲＦバイアスのオン、オフの概略を示す図であ
る。2A is a diagram showing a high frequency without pulse modulation, FIG. 2B is a diagram showing a high frequency according to the present invention with pulse modulation, and FIG. 2C is a diagram schematically showing ON / OFF of an RF bias. Is.
【図３】図（Ａ）は従来例による成膜状態の、図（Ｂ）
は本発明方法よる成膜状態の説明図である。FIG. 3 (A) shows a state of film formation according to a conventional example, FIG.
[FIG. 3] is an explanatory view of a film forming state by the method of the present invention.
１ 成膜室 ２ 排気ポンプ ２１ 電磁弁 3 接地電極 ３１ ヒータ ４ 高周波電極 ５ 酸素ガスボンベ ５１ 流量コントローラ ５２ 電磁弁 ６ ＴＥＯＳボンベ ６１ 流量コントローラ ６２ 電磁弁 ７ ヒータ ８ マッチングボックス ９ 高周波電源 ９１ 高周波信号発生器 ９２ ＲＦパワーアンプ １０ 高周波電源 Ｐ 膜形成物 1 Film forming chamber 2 Exhaust pump 21 Solenoid valve 3 Ground electrode 31 Heater 4 High frequency electrode 5 Oxygen gas cylinder 51 Flow controller 52 Solenoid valve 6 TEOS cylinder 61 Flow controller 62 Solenoid valve 7 Heater 8 Matching box 9 High frequency power supply 91 High frequency signal generator 92 RF power amplifier 10 High frequency power supply P Film formation
Claims (1)
るプラズマＣＶＤ法を採用し、前記原料ガスのプラズマ
化をパルス変調をかけた高周波電力の印加により行い、
該高周波電力の印加とともに絶縁膜を形成すべき物品に
高周波バイアスを印加することを特徴とする薄膜デバイ
スの絶縁膜形成方法。1. A plasma CVD method using an organic silane-O 2 -based gas as a raw material gas is employed, and the raw material gas is turned into plasma by applying pulse-modulated high-frequency power,
A method for forming an insulating film in a thin film device, characterized in that a high frequency bias is applied to an article on which an insulating film is to be formed together with the application of the high frequency power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1919892A JPH0793295B2 (en) | 1992-02-04 | 1992-02-04 | Method for forming insulating film of thin film device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1919892A JPH0793295B2 (en) | 1992-02-04 | 1992-02-04 | Method for forming insulating film of thin film device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05218005A JPH05218005A (en) | 1993-08-27 |
| JPH0793295B2 true JPH0793295B2 (en) | 1995-10-09 |
Family
ID=11992658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1919892A Expired - Fee Related JPH0793295B2 (en) | 1992-02-04 | 1992-02-04 | Method for forming insulating film of thin film device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793295B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794421A (en) * | 1993-09-21 | 1995-04-07 | Anelva Corp | Method for manufacturing amorphous silicon thin film |
| JPH08186173A (en) * | 1994-12-28 | 1996-07-16 | Nec Corp | Manufacture of semiconductor device |
| JP2010147313A (en) * | 2008-12-19 | 2010-07-01 | Semiconductor Energy Lab Co Ltd | Method of manufacturing soi substrate |
| JP2023010234A (en) * | 2021-07-09 | 2023-01-20 | ソニーセミコンダクタソリューションズ株式会社 | Method for manufacturing semiconductor device and film forming device |
-
1992
- 1992-02-04 JP JP1919892A patent/JPH0793295B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05218005A (en) | 1993-08-27 |
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