JPH0810621B2 - Ceramic heater - Google Patents
Ceramic heaterInfo
- Publication number
- JPH0810621B2 JPH0810621B2 JP2144137A JP14413790A JPH0810621B2 JP H0810621 B2 JPH0810621 B2 JP H0810621B2 JP 2144137 A JP2144137 A JP 2144137A JP 14413790 A JP14413790 A JP 14413790A JP H0810621 B2 JPH0810621 B2 JP H0810621B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- sintered body
- heater
- sic
- ceramic heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 title claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 24
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 8
- 229910021426 porous silicon Inorganic materials 0.000 claims description 8
- 150000002816 nickel compounds Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 description 21
- 229910010271 silicon carbide Inorganic materials 0.000 description 15
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000010411 cooking Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
Landscapes
- Resistance Heating (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は、暖房、乾燥、調理等の比較的低温域での
加熱用電源として利用されるヒーターで、特に、物理
的、化学的に優れているだけでなく、耐熱性、強度、経
済性などヒーターとして具備すべき諸条件においても、
金属製材料よりも優れた炭化けい素（SiC）を発熱体材
料として使用するセラミック製ヒーターに関するもので
ある。TECHNICAL FIELD The present invention relates to a heater used as a power source for heating in a relatively low temperature range such as heating, drying and cooking, and is particularly excellent in physical and chemical properties. Not only the heat resistance, strength, economy, etc.
The present invention relates to a ceramic heater that uses silicon carbide (SiC), which is superior to a metallic material, as a heating element material.
（従来の技術） SiC単体を発熱体材料とするセラミック製ヒーターの
使用される温度範囲は約900〜1600℃であり、従来のこ
の種のセラミック製ヒーターは、一般工業用加熱の熱源
として多く使用されていた。(Prior art) The temperature range of the ceramic heater that uses SiC alone as a heating element material is about 900 to 1600 ° C, and this type of conventional ceramic heater is often used as a heat source for general industrial heating. It had been.
（発明が解決しようとする課題） SiC発熱体は、ニクロム線等の主として低温域での発
熱体材料として古くから使用されてきた金属材料に比較
して、既述のように、ヒーターとしての諸条件において
優れているにも拘わらず、一般工業用加熱の熱源などの
比較的狭い温度範囲での用途に制約されていた。その主
たる原因は、SiC発熱体の電気的特性、つまり、温度抵
抗特性にある。(Problems to be Solved by the Invention) As compared with metallic materials that have been used for a long time mainly as a heating element material in a low temperature range such as a nichrome wire, SiC heating elements have various properties as a heater as described above. Despite being excellent in conditions, it was restricted to applications in a relatively narrow temperature range such as a heat source for general industrial heating. The main cause is the electrical characteristics of the SiC heating element, that is, the temperature resistance characteristics.
即ち、SiC発熱体の電気抵抗は温度依存性が強い。第
３図はSiC発熱体の温度抵抗特性図を示し、同図から明
らかなように、400℃付近を境にして、それ以下の低温
域では負特性、それ以上の高温域では正特性を持ってい
る。従って、暖房、乾燥、調理などのように、比較的、
低温域で使用される場合は、温度の上昇に伴ない電気抵
抗が急激に小さくなるために、発熱量をほぼ一定に保持
するためには、電圧や電流の制御系が必要となり、ヒー
ター全体としてのコストアップの原因となっている。That is, the electric resistance of the SiC heating element has a strong temperature dependency. Fig. 3 shows the temperature resistance characteristic diagram of the SiC heating element. As is clear from the figure, it has a negative characteristic at low temperatures below 400 ° C and a positive characteristic at higher temperatures. ing. Therefore, like heating, drying, cooking, etc.
When used in a low temperature range, the electrical resistance rapidly decreases with increasing temperature, so a voltage or current control system is required to keep the amount of heat generated almost constant. Is causing the cost increase.
この発明は上記実情に鑑みてなされたもので、電気抵
抗の温度依存性を解消して、暖房等の低温域での使用に
際しても、電圧や電流の制御系を不要にでき、かつ急速
昇温を可能とできるセラミック製ヒーターを提供するこ
とを目的とする。The present invention has been made in view of the above circumstances, eliminates the temperature dependence of electric resistance, and can eliminate the need for a voltage or current control system even when used in a low temperature range such as heating, and rapidly raise the temperature. It is an object of the present invention to provide a ceramic heater capable of achieving the above.
（課題を解決するための手段） 上記目的を達成するために、この発明に係るセラミッ
ク製ヒーターは、所定量のニッケル化合物を添加して得
られた多孔質炭化けい素焼結体からなるヒーターであっ
て、該多孔質炭化けい素焼結体の粒界中にニッケルシリ
サイド合金を含有させてなるものである。(Means for Solving the Problems) In order to achieve the above object, the ceramic heater according to the present invention is a heater made of a porous silicon carbide sintered body obtained by adding a predetermined amount of a nickel compound. Then, a nickel silicide alloy is contained in the grain boundaries of the porous silicon carbide sintered body.
（作用） この発明によれば、所定量のニッケル化合物を添加し
て得られた多孔質炭化けい素焼結体から構成されるもの
であるから、その多孔質炭化けい素焼結体の粒界中に存
在するニッケルシリサイド合金によって電流が流れ易く
なり、非常に広い範囲の温度域において抵抗変化率をほ
ぼ一定に保つことが可能であり、これによって、SiC単
体の場合にみられる低温域での負特性を消失させて、電
圧や電流の制御系を要することなく、温度変化にかかわ
らず、ほぼ一定の発熱量（出力）が得られる。また、ニ
ッケルシリサイド合金の存在により熱衝撃性の向上も図
れるために、直接通電による急速加熱も可能となり、加
熱効率の増進が図れる。(Operation) According to the present invention, since the porous silicon carbide sintered body is obtained by adding a predetermined amount of nickel compound, the porous silicon carbide sintered body is formed in the grain boundaries of the porous silicon carbide sintered body. The existing nickel-silicide alloy facilitates the flow of electric current, and it is possible to keep the resistance change rate almost constant over a very wide temperature range, which results in the negative characteristics in the low temperature range observed in the case of SiC alone. Is eliminated, and a substantially constant amount of heat generation (output) can be obtained regardless of temperature changes, without requiring a voltage or current control system. Further, since the presence of the nickel silicide alloy can improve the thermal shock resistance, rapid heating by direct energization is also possible and the heating efficiency can be improved.
（実施例） 以下、この発明の実施例を図面に基づいて説明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図は棒型ヒーターの概略構成図を示し、この棒型
ヒーターは、発熱部１の両端にメタリコン部2A,2Aを含
む冷端部2,2を設けたもので、その冷端部2,2は金属シリ
コンの含浸により電気抵抗を下げている。FIG. 1 shows a schematic configuration diagram of a rod-shaped heater. In this rod-shaped heater, cold end portions 2, 2 including metallikon portions 2A, 2A are provided at both ends of a heat generating portion 1, and the cold end portion 2 is provided. , 2 has reduced the electrical resistance by impregnation with metallic silicon.
上記のような棒型ヒーターの発熱体材料として、この
発明では、３重量％〜20重量％の範囲のNi化合物を添加
して得られた多孔質SiC焼結体を用いたのであり、その
多孔質SiC焼結体の粒界中には、SiCとNiOやNiCO3などの
Ni化合物との高温下での反応によって生成されたNinSim
（ニッケルシリサイド合金）が含有されている。In the present invention, the porous SiC sintered body obtained by adding the Ni compound in the range of 3% by weight to 20% by weight was used as the heating element material of the rod-type heater as described above. In the grain boundaries of the high quality SiC sintered body, SiC, NiO, NiCO 3 etc.
NinSim produced by reaction with Ni compound at high temperature
(Nickel silicide alloy) is contained.
次に、本発明者が行なった実験例について説明する。 Next, an experimental example conducted by the present inventor will be described.
純度が97％以上の高純度のSiCの粉末（GC8000）に、N
iOもしくはNiCO3粉末（試薬１級）を１〜10重量％添加
し、さらに、成形助材としてポリエチレングリコール＃
4000（３部）およびメタノール溶剤としてステアリン酸
（１部）を添加し、ボールミルで混合した後、スプレー
ドライヤーで乾燥造粒する。N is added to high-purity SiC powder (GC8000) with a purity of 97% or more.
Add 1 to 10% by weight of iO or NiCO 3 powder (reagent grade 1) and add polyethylene glycol # as a molding aid.
4000 (3 parts) and stearic acid (1 part) as a methanol solvent are added, mixed with a ball mill, and then dried and granulated with a spray dryer.
このようにして得られた造粒粉を金型にとり、1000〜
2000kg/cm2の面圧を加えて、５×５×50lの角柱を成形
した後、真空焼成炉にセットし、1500℃までは10-1〜10
-2Torr下で焼成し、つづいて、アルゴンガス（大気圧）
下で2000℃まで昇温し、１時間保持して焼成を完了す
る。その後、自然冷却して電気抵抗測定用試料を得る。Put the granulated powder obtained in this way in a mold, 1000 ~
After applying a surface pressure of 2000kg / cm 2 to form a 5 × 5 × 50l prism, set it in a vacuum firing furnace and heat it up to 1500 ℃ at 10 -1 -10
Baking under -2 Torr, followed by argon gas (atmospheric pressure)
The temperature is raised to 2000 ° C. under the temperature and kept for 1 hour to complete the firing. Then, it is naturally cooled to obtain a sample for measuring electric resistance.
上記のようにして得られた試料は、ほとんど収縮が認
められなかったが、粒子はネッキングしており、曲げ強
度も８〜15kg/mm2で、気孔率35％の多孔質であっても、
比較的高強度の焼結体が得られた。The sample obtained as described above showed almost no shrinkage, but the particles were necked, the bending strength was 8 to 15 kg / mm 2 , and the porosity was 35%.
A relatively high strength sintered body was obtained.
次に、上記焼結体試料の両端にAgペーストで0.1φの
白金線を焼き付け、恒温炉中にセットし、常温〜500℃
での抵抗を２点法により測定した。その結果、第１図で
示すような温度抵抗特性が得られた。Next, bake a 0.1φ platinum wire with Ag paste on both ends of the above-mentioned sintered body sample, set in a constant temperature oven, and room temperature to 500 ° C.
Resistance was measured by the two-point method. As a result, the temperature resistance characteristic as shown in FIG. 1 was obtained.
第１図の特性図から明らかなように、NiOの添加量が
３重量％以上のものにおいて、抵抗の不変性が認めら
れ、SiC単体の場合の負特性が完全に消失していること
が確認できた。As is clear from the characteristic diagram in Fig. 1, it was confirmed that the invariance of resistance was observed and the negative characteristic of SiC alone completely disappeared when the amount of NiO added was 3 wt% or more. did it.
なお、NiOの添加量が１重量％未満の場合では、負特
性の消失効果がほとんどなく、３重量％未満〜１重量％
の場合では、負特性の消失効果を有するものの、抵抗が
高すぎてヒーターとして好ましくない。また、10重量％
〜20重量％の場合は、負特性の消失効果を有するもの
の、必要な発熱量を得るための抵抗として十分でない。If the amount of NiO added is less than 1% by weight, there is almost no effect of eliminating the negative characteristics, and less than 3% by weight to 1% by weight.
In the case of 1, although it has the effect of eliminating the negative characteristics, the resistance is too high and it is not preferable as a heater. Also, 10% by weight
When it is up to 20% by weight, it has an effect of eliminating the negative characteristic, but it is not sufficient as the resistance for obtaining the necessary amount of heat generation.
以上の実験結果から総合的に判断すると、この発明に
係るセラミック製ヒーターにおけるNi化合物の含有量
は、３〜20重量％で、好ましくは５〜10重量％の範囲が
適当であると言える。Comprehensively judging from the above experimental results, it can be said that the content of the Ni compound in the ceramic heater according to the present invention is 3 to 20% by weight, preferably 5 to 10% by weight.
この５〜10重量％のNi化合物を添加して得られた多孔
質SiC焼結体の粒界中には、NinSim（ニッケルシリサイ
ド合金）の存在がＸ線回析からも認められ、これが電流
を流れ易くし、抵抗不変特性を呈することになる。The presence of NinSim (nickel silicide alloy) in the grain boundaries of the porous SiC sintered body obtained by adding the Ni compound of 5 to 10 wt% was also confirmed by X-ray diffraction. It facilitates flow and exhibits resistance invariant characteristics.
尚、上記実施例では、棒型（JIS第２種）のヒーター
に適用したものを示したが、これ以外にも、板型、柄付
型、割型、ヘアピン型、三相型、スパイラル型、コの字
型など電気回路的に可能なものであれば、どのような形
状のヒーターに適用しても良い。In the above-mentioned examples, the one applied to the rod type (JIS second type) heater is shown, but other than this, plate type, patterned type, split type, hairpin type, three-phase type, spiral type The heater may be applied to any shape as long as it can be formed in an electric circuit, such as a U-shape.
（発明の効果） 以上のように、この発明によれば、発熱体材料とし
て、所定量のニッケル化合物を添加して得られた多孔質
炭化けい素焼結体を用いるものであるから、その多孔質
炭化けい素焼結体の粒界中に存在するニッケルシリサイ
ド合金によって電流が流れ易くなり、非常に広い範囲の
温度域において抵抗変化率をほぼ一定に保つ抵抗不変特
性を得ることが可能となる。したがって、SiC単体の場
合にみられる低温域での負特性を消失させて、暖房、乾
燥、調理などの比較的低温で使用される場合の発熱量
（出力）を、電圧や電流の制御系を要することなく、ほ
ぼ一定に保持することができ、これによって、ヒーター
全体の構成の簡素化およびコストダウンを実現できる。
しかも、ニッケルシリサイド合金の存在により結合力お
よび熱衝撃性の向上も図れるために、直接通電による急
速加熱が可能となり、加熱効率の増進を図ることができ
る。(Effects of the Invention) As described above, according to the present invention, the porous silicon carbide sintered body obtained by adding a predetermined amount of the nickel compound is used as the heating element material. The nickel silicide alloy existing in the grain boundaries of the silicon carbide sintered body facilitates the flow of an electric current, and it becomes possible to obtain the resistance invariant characteristic in which the resistance change rate is kept substantially constant in a very wide temperature range. Therefore, by eliminating the negative characteristics in the low temperature range that are found in the case of SiC alone, the amount of heat generated (output) when used at relatively low temperatures such as heating, drying, and cooking can be controlled by the voltage or current control system. It can be held almost constant without needing to realize simplification of the configuration of the entire heater and cost reduction.
Moreover, since the binding force and the thermal shock resistance can be improved by the presence of the nickel silicide alloy, rapid heating by direct energization becomes possible, and the heating efficiency can be improved.
【図面の簡単な説明】 第１図はこの発明の実施例による棒型のセラミック製ヒ
ーターの概略構成図、第２図はこの発明における発熱体
材料の温度抵抗特性図、第３図はSiC単体の場合の温度
抵抗特性図である。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic configuration diagram of a rod-shaped ceramic heater according to an embodiment of the present invention, FIG. 2 is a temperature resistance characteristic diagram of a heating element material according to the present invention, and FIG. 3 is a simple substance of SiC. It is a temperature resistance characteristic figure in the case of.
Claims (1)
た多孔質炭化けい素焼結体からなるヒーターであって、
該多孔質炭化けい素焼結体の粒界中にニッケルシリサイ
ド合金を含有させてなるセラミック製ヒーター。1. A heater comprising a porous silicon carbide sintered body obtained by adding a predetermined amount of a nickel compound,
A ceramic heater in which a nickel silicide alloy is contained in the grain boundaries of the porous silicon carbide sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2144137A JPH0810621B2 (en) | 1990-05-31 | 1990-05-31 | Ceramic heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2144137A JPH0810621B2 (en) | 1990-05-31 | 1990-05-31 | Ceramic heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0436975A JPH0436975A (en) | 1992-02-06 |
| JPH0810621B2 true JPH0810621B2 (en) | 1996-01-31 |
Family
ID=15355083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2144137A Expired - Lifetime JPH0810621B2 (en) | 1990-05-31 | 1990-05-31 | Ceramic heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0810621B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2067756A2 (en) | 2007-11-30 | 2009-06-10 | Ngk Insulator, Ltd. | Silicon carbide based porous material and method for preparation thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5189832B2 (en) | 2007-12-13 | 2013-04-24 | 日本碍子株式会社 | Silicon carbide based porous material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60124385A (en) * | 1983-12-09 | 1985-07-03 | 竹市 冨朗 | Metal coupling type sic heater |
-
1990
- 1990-05-31 JP JP2144137A patent/JPH0810621B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2067756A2 (en) | 2007-11-30 | 2009-06-10 | Ngk Insulator, Ltd. | Silicon carbide based porous material and method for preparation thereof |
| US8475906B2 (en) | 2007-11-30 | 2013-07-02 | Ngk Insulators, Ltd. | Silicon carbide based porous material and method for preparation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0436975A (en) | 1992-02-06 |
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