JPH0810770B2 - Ceramic superconducting device - Google Patents

Ceramic superconducting device

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Publication number
JPH0810770B2
JPH0810770B2 JP63081993A JP8199388A JPH0810770B2 JP H0810770 B2 JPH0810770 B2 JP H0810770B2 JP 63081993 A JP63081993 A JP 63081993A JP 8199388 A JP8199388 A JP 8199388A JP H0810770 B2 JPH0810770 B2 JP H0810770B2
Authority
JP
Japan
Prior art keywords
superconducting
ceramic
superconductor
current
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63081993A
Other languages
Japanese (ja)
Other versions
JPH01302784A (en
Inventor
照榮 片岡
浩哉 佐藤
修平 土本
秀雄 野島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63081993A priority Critical patent/JPH0810770B2/en
Priority to DE89301279T priority patent/DE68906044T2/en
Priority to EP89301279A priority patent/EP0328398B1/en
Priority to CN89101727A priority patent/CN1054471C/en
Publication of JPH01302784A publication Critical patent/JPH01302784A/en
Priority to US07/983,290 priority patent/US5298485A/en
Publication of JPH0810770B2 publication Critical patent/JPH0810770B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • Y02E40/64
    • Y02E40/641
    • Y02E40/642

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Description

【発明の詳細な説明】 <産業上の利用分野> 本発明は、セラミック超電導材料を用いた電気回路の
基本論理素子を構成するセラミック超電導装置及びその
形成容易な構造に関するものである。
Description: TECHNICAL FIELD The present invention relates to a ceramic superconducting device that constitutes a basic logic element of an electric circuit using a ceramic superconducting material, and a structure that can be easily formed.

<従来の技術> 超電導材料を用いた論理回路素子として、ジョセフソ
ン素子が知られており、このジョセフソン素子は、ニオ
ブや鉛の合金よりなる超電導材料の間に極めて薄い絶縁
膜を挟んだ構造である。
<Prior Art> A Josephson element is known as a logic circuit element using a superconducting material. This Josephson element has a structure in which an extremely thin insulating film is sandwiched between superconducting materials made of an alloy of niobium or lead. Is.

<発明が解決しようとする問題点> しかし上記したジョセフソン素子の絶縁膜は数10Å程
度の薄膜が必要であるが、この絶縁膜を作製するために
は高度の薄膜製造技術が要求され、生産が困難であっ
た。またジョセフソン素子は動作速度が極めて速いこと
が技術上の利点として挙げられるが、反面その出力レベ
ルの変化は大きくないため、実用的な使用が困難な素子
であった。
<Problems to be solved by the invention> However, the insulating film of the Josephson device described above requires a thin film of about several tens of liters, and in order to manufacture this insulating film, advanced thin film manufacturing technology is required, Was difficult. Further, although the Josephson element has a technical advantage that its operation speed is extremely fast, on the other hand, its change in output level is not so large that it is a practically difficult element to use.

本発明は上記の点に鑑みて創案されたものであり、上
記したジョセフソン素子よりなる論理回路素子の有する
問題点を除去した新規な超電導装置、即ち製造が容易
で、かつ動作特性の優れた超電導装置を提供することを
目的としている。
The present invention was created in view of the above points, and is a novel superconducting device that eliminates the problems of the logic circuit element composed of the Josephson element, that is, easy to manufacture, and excellent in operating characteristics. It is intended to provide a superconducting device.

<問題点を解決するための手段> 上記の目的を達成するため、本発明のセラミックの超
電導装置は、少なくとも一対の電極を備えたセラミック
超電導体と、上記のセラミック超電導体の近傍に設けら
れた電流を流す少なくとも1つの導体とを備え、上記の
導体に流す電流により発生する磁界を上記のセラミック
超電導体と作用せしめるように構成している。
<Means for Solving the Problems> In order to achieve the above object, a ceramic superconducting device of the present invention is provided with a ceramic superconductor having at least a pair of electrodes, and provided in the vicinity of the ceramic superconductor. At least one conductor for passing an electric current is provided, and the magnetic field generated by the electric current passed through the conductor is made to act on the ceramic superconductor.

即ち、本発明はセラミック系よりなる超電導材料の結
晶粒界に存在する弱結合を利用するものであって、超電
導体に平行または交差して少なくとも1本の導体を配置
し、この導体に流す電流によって発生する磁界が上記の
超電導体に影響を及ぼすように構成したものである。
That is, the present invention utilizes weak coupling existing in the crystal grain boundaries of a ceramic-based superconducting material, in which at least one conductor is arranged parallel to or intersecting with the superconductor, and a current flowing through this conductor is used. The magnetic field generated by the above influences the superconductor.

上記の超電導体は、好ましい実施例にあってはY1Ba2C
u3O7-Xよりなるセラミック超電導体膜であり、一方向に
長く形成し、この超電導体膜に平行もしくは交差して少
なくとも1本の電流導体を配置している。
The superconductor described above is Y 1 Ba 2 C in the preferred embodiment.
A ceramic superconductor film made of u 3 O 7 -X , which is formed to be long in one direction, and at least one current conductor is arranged in parallel or intersecting with this superconductor film.

また上記のセラミック超導電導体と電流を流す導体を
同一基板上に設けてなるように構成しており、更に上記
のセラミック超電導体と電流を流す導体を絶縁物を介し
て積層状態に設けるようになしても良く、また上記のセ
ラミック超電導体と電流を流す導体とは近接して平行に
配置しても良く、あるいはお互に交差させるように配置
しても良い。
Further, the above-mentioned ceramic superconducting conductor and the conductor through which the current flows are provided on the same substrate, and further the above-mentioned ceramic superconducting conductor and the conductor through which the current flows are provided in a laminated state via an insulator. Alternatively, the ceramic superconductor and the conductor through which the current flows may be disposed in close proximity to each other, or may be disposed so as to intersect with each other.

また本発明の他の好ましい実施例にあっては一つのセ
ラミック超電導体の両側にそれぞれ一つづつの独立した
電流を流す導体を設けるように構成している。
Further, in another preferred embodiment of the present invention, one ceramic superconductor is provided with a conductor for passing an independent current on each side.

また、本発明のセラミック超電導装置を使用するにあ
たっては、セラミックス超電導体の近傍に設けた少なく
とも2つの導体に同方向あるいは逆方向に電流を流すこ
とによりセラミック超電導体に設けた一対の電極より論
理出力を得るようにして論理回路素子を構成している。
Further, when using the ceramic superconducting device of the present invention, a logical output is made from a pair of electrodes provided on the ceramic superconductor by passing a current in at least two conductors provided in the vicinity of the ceramic superconductor in the same direction or opposite directions. To obtain the logic circuit element.

また、本発明のセラミック超電導装置は、基板と、こ
の基板上に形成したセラミック超電導膜とを有し、この
セラミック超電導膜は複数の部分に電気的に分割されて
成り、この分割された少なくとも一つのセラミック超電
導膜に流す電流により発生する磁界を上記の他の分割さ
れたセラミック超電導膜と作用せしめるように構成して
いる。
Further, the ceramic superconducting device of the present invention has a substrate and a ceramic superconducting film formed on the substrate. The ceramic superconducting film is electrically divided into a plurality of parts, and at least one of the divided parts is formed. A magnetic field generated by a current flowing through one ceramic superconducting film is made to act on the other divided ceramic superconducting films.

この場合、上記の複数の部分に分割されたセラミック
超電導膜において、素子として機能する超電導体部分
と、この素子部分を制御するための超電導体部分との間
の超電導体膜を除去するようになしても良く、また素子
として機能する超電導体部分と、この素子を制御するた
めの超電導体部分との間を絶縁体化するようになしても
良い。
In this case, in the ceramic superconducting film divided into the plurality of parts, the superconducting film between the superconducting part functioning as an element and the superconducting part for controlling the element part is not removed. Alternatively, the superconductor portion functioning as an element and the superconductor portion for controlling this element may be made into an insulator.

即ち、上記した本発明はセラミック系よりなる超電導
材料の結晶粒界に存在する弱結合を利用するものであっ
て、超電導体膜を少なくとも2つに電気的に分割するよ
うに加工し、一方の超電導体に流れる電流によって発生
する磁界が他の超電導体に影響を及ぼすように構成する
ものである。
That is, the present invention described above utilizes the weak bond existing in the crystal grain boundary of the ceramic superconducting material, and the superconductor film is processed so as to be electrically divided into at least two. The magnetic field generated by the current flowing through the superconductor affects the other superconductors.

上記の超電導体膜は、好ましい実施例にあってはY1Ba
2Cu3O7-Xよりなるセラミック超電導体膜であり、膜作製
後、加工することによって電気的に分割することによ
り、超電導体膜に、少なくとも1本の超電導体によって
形成された電流導体が配置される。上記、電流導体は2
本以上配置され、電流を同方向又は逆方向に流し、出力
を超電導体から得るようにして論理回路素子が構成され
る。
The above superconductor film is Y 1 Ba in the preferred embodiment.
It is a ceramic superconductor film made of 2 Cu 3 O 7-X , and after the film is formed, it is electrically divided so that a current conductor formed by at least one superconductor is formed in the superconductor film. Will be placed. Above, the current conductor is 2
The logic circuit elements are arranged by arranging more than one line and passing the current in the same direction or the opposite direction and obtaining the output from the superconductor.

<作用> セラミック超電導体の結晶粒界は、微弱な磁界で破ら
れ、超電導体は超電導状態から抵抗体に変化することを
本出願人は見出し、特願昭62−233369号「超電導磁気抵
抗システム」として提案しているが、本発明は、この現
象を利用したもので、超電導体に平行いあるは交差して
配置した導体に流れる電流によって発生する磁界を超電
導体に作用させ、超電導体が超電導状態と通常の抵抗体
に変化する状態を検出するようにしたものである。
<Operation> The applicant has found that the crystal grain boundaries of the ceramic superconductor are broken by a weak magnetic field, and the superconductor changes from a superconducting state to a resistor, and Japanese Patent Application No. 62-233369 “Superconducting Magnetoresistive System”. The present invention utilizes this phenomenon, in which a magnetic field generated by a current flowing through a conductor arranged parallel to or intersecting with the superconductor is applied to the superconductor, It is designed to detect a superconducting state and a state in which a normal resistor is changed.

更に詳細に説明すると、セラミック系の粒子よりなる
結晶粒界を有する超電導材料よりなる素子は、磁界が印
加されない場合には、第11図に示すように、素子の示す
電気抵抗R0は完全に零の値を示すが、ある臨界磁界HC
加えると突然素子は電気抵抗を示し、印加磁界の増大と
ともに、電気抵抗が急激に増大する新しい現象を本出願
人は先に見出して上記した特許出願をしているが、この
素子の初期抵抗R0に対する抵抗の変化ΔRの比、ΔR/R0
は無限大となって、従来の磁気抵抗素子とは比較になら
ない高性能を示す素子である。
In more detail, the element made of a superconductive material having a crystal grain boundary composed of particles of ceramic, when the magnetic field is not applied, as shown in FIG. 11, the electrical resistance R 0 shown by the element completely Although showing a value of zero, when a certain critical magnetic field H C is applied, the element suddenly exhibits electric resistance, and the applicant found a new phenomenon in which the electric resistance rapidly increases with an increase in the applied magnetic field. We have filed an application, but the ratio of the resistance change ΔR to the initial resistance R 0 of this device is ΔR / R 0
Is an infinite element, which is a high-performance element that is incomparable to conventional magnetoresistive elements.

即ち、最近多くの研究機関で進められているセラミッ
ク超電導体の研究の方向は、臨界温度(TC)、臨界磁界
(HC)、臨界電流(IC)の向上を図ることにあるが、本
出願人も上記セラミック超電導体について種々研究した
ところ、この超電導材料のある種のもの(超電導材料の
粒子間に弱結合状態を持つもの)が上記第11図に示すよ
うに極めて弱い磁界(数ガウス)で弱結合の超電導状態
が破れて電気抵抗を示し、印加磁界の強さとともに急激
に増加することを見出し、この低い臨界磁界現象を用い
て新規な論理回路素子として動作するセラミック超電導
装置を創案したものである。
In other words, the direction of research on ceramic superconductors, which is being promoted by many research institutions in recent years, is to improve the critical temperature (T C ), critical magnetic field (H C ), and critical current (I C ). The present applicant has also conducted various studies on the above-mentioned ceramic superconductor. As a result, a certain kind of this superconducting material (having a weakly-bonded state between particles of the superconducting material) has an extremely weak magnetic field (number We found that the weakly coupled superconducting state was broken by Gauss) and showed an electrical resistance, which rapidly increased with the strength of the applied magnetic field, and by using this low critical magnetic field phenomenon, a ceramic superconducting device that operates as a new logic circuit element was developed. It was created.

上記第11図に示したような磁界の印加に対する電気抵
抗の変化特性は、セラミックス系の超電導材料が多くの
超電導体微粒子より構成される結晶体で、その粒子境界
に極めて薄い絶縁物あるいは抵抗体が存在し、または、
粒子間の接触部分がポイント状態になる、即ち、粒界と
粒界が点状の接触をなしている等、いわゆる超電導の弱
結合状態にあり、超電導状態では、トンネル効果等によ
り、電子が自由に移動して電気抵抗零を示す。つまりセ
ラミック系等の多結晶の弱結合状態にある超電導材料は
第12図に示すように等価的には無数のジョセフソン結合
121,121,…の集合体とみなすことが出来る。
As shown in FIG. 11 above, the change characteristic of electric resistance with respect to the application of a magnetic field is that the ceramic superconducting material is a crystal body composed of many superconducting fine particles, and an extremely thin insulator or resistor is present at the grain boundary. Exists, or
The point of contact between particles is in a point state, that is, the grain boundaries are in point-like contact, and so-called weak superconducting state of superconductivity.In the superconducting state, electrons are free due to tunnel effect, etc. Moved to and showed zero electrical resistance. In other words, a polycrystalline superconducting material in a weakly coupled state, such as a ceramic, is equivalent to an infinite number of Josephson couplings, as shown in Fig. 12.
It can be regarded as an aggregate of 121, 121, ....

このような材料に磁界を印加すると、磁界の影響によ
り、ジョセフソン結合121,121,…の超電導性が破れ、即
ち、弱磁界の印加によって超電導の弱結合状態が破れ
て、素子は電気抵抗を示すようになり、磁界の強さの増
大と共に電気抵抗は増大する。
When a magnetic field is applied to such a material, the superconductivity of the Josephson couplings 121, 121, ... Is broken by the effect of the magnetic field, that is, the weak coupling state of superconductivity is broken by the application of a weak magnetic field, and the element exhibits electrical resistance. And the electric resistance increases as the strength of the magnetic field increases.

この性質は上記原理からも明らかなように、結晶粒界
はランダムに配置されているため、印加する磁界の方向
には依存せずに、磁界の強さの絶体値によって定まるも
のである。
As is clear from the above principle, this property is determined by the absolute value of the magnetic field strength without depending on the direction of the applied magnetic field because the crystal grain boundaries are randomly arranged.

また、本発明は超電導体の近傍に電流導体を配置して
論理回路素子を構成するように成したものであるが、こ
の場合、超電導膜を加工することによって電気的に分割
して、超電導体と(超電導体によって形成される)電流
導体を構成することにより、製造の容易さをより向上さ
せることになる。
Further, according to the present invention, a current conductor is arranged in the vicinity of a superconductor to form a logic circuit element. In this case, however, the superconducting film is processed so that it is electrically divided to obtain a superconductor. By constructing a current conductor (formed by a superconductor) with, the manufacturability will be further improved.

<実施例> 以下、図面を参照して本発明の実施例を詳細に説明す
る。
<Example> Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

第1図は本発明の一実施例を示す平面図である。 FIG. 1 is a plan view showing an embodiment of the present invention.

第1図において、1はセラミック超電導体3,この超電
導体3の両端近傍に設けられた一対の電流電極21,21及
びこの電極21,21の中間位置に設けられた電圧電極22,22
よりなる超電導磁気センサであり、5はこの超電導磁気
センサ1の近傍に平行状態に設けられた導体であり、上
記の超電導磁気センサ1及び導体5は共通の基板7上に
形成されている。
In FIG. 1, reference numeral 1 is a ceramic superconductor 3, a pair of current electrodes 21 and 21 provided near both ends of the superconductor 3, and voltage electrodes 22 and 22 provided at an intermediate position between the electrodes 21 and 21.
Is a superconducting magnetic sensor, and 5 is a conductor provided in the vicinity of the superconducting magnetic sensor 1 in a parallel state. The superconducting magnetic sensor 1 and the conductor 5 are formed on a common substrate 7.

次に、上記第1図に示した装置の作製方法について詳
細に説明する。
Next, a method for manufacturing the device shown in FIG. 1 will be described in detail.

まず、本装置に用いられるセラミック超電導体膜の磁
気センサを作製するために、第10図に示す成膜装置にお
いて、基板7を安定化ジルコニアとし、ヒーター9で基
板温度を400℃に保ちながら、Y(NO3・6H2O,Ba(N
O32,Cu(NO3・3H2OをY1Ba2Cu3O7-Xとなる様所定
量秤量し、硝酸塩水溶液を噴射装置11から断続的に、基
板7に向けて、膜厚5μmの一様な膜となる様に成膜
し、その後950℃で60分間と、500℃で10時間の空気中ア
ニールを行った。この様にして作製したセラミック超電
導体膜の臨界温度は、抵抗が100Kから下がりはじめ、83
Kで完全に抵抗零を示している。
First, in order to manufacture a magnetic sensor of a ceramic superconductor film used in this apparatus, in the film forming apparatus shown in FIG. 10, while the substrate 7 was stabilized zirconia and the heater 9 kept the substrate temperature at 400 ° C. Y (NO 3) 3 · 6H 2 O, Ba (N
O 3) 2, Cu (NO 3) 2 · 3H 2 O to Y 1 Ba 2 Cu 3 O 7 -X to become as weighed in predetermined amounts, intermittently nitrate aqueous solution from the injection device 11, toward the substrate 7 The film was formed into a uniform film having a thickness of 5 μm, and then annealed in air at 950 ° C. for 60 minutes and at 500 ° C. for 10 hours. The critical temperature of the ceramic superconducting film prepared in this way is that the resistance starts to drop from 100K,
It shows zero resistance at K.

次に、このセラミック高温超電導体を50μm幅,長さ
30mmに加工して超電導体3とするために、レジストを塗
布し、通常のフォトリソグラフィ工程にて細いストライ
プ状に加工し超電導磁気センサ1の超電導体部分を作製
した。このセラミック高温超電導体はリン酸系エッチン
グ液で容易に加工することが出来た。次に第1図に示す
電極21,22及び磁界を発生させるための導体5を作製す
るため、再びフォトリソグラフィ工程とリフトオフ法に
より、Ti蒸着膜による配線パターンを形成し、第1図に
示す本発明のセラミック超電導装置を作製した。
Next, this ceramic high temperature superconductor is 50μm wide and long
In order to form the superconductor 3 by processing it to 30 mm, a resist was applied and processed into a thin stripe shape by an ordinary photolithography process to produce a superconductor portion of the superconducting magnetic sensor 1. This ceramic high temperature superconductor could be easily processed with a phosphoric acid-based etching solution. Next, in order to fabricate the electrodes 21 and 22 shown in FIG. 1 and the conductor 5 for generating a magnetic field, a wiring pattern made of a Ti vapor deposition film is formed again by the photolithography process and the lift-off method. The ceramic superconducting device of the invention was produced.

本発明に用いたセラミック超電導磁気センサ1は、粒
界に介在する絶縁層やポイントコンタクトが弱結合にな
り、ジョセフソン接合の集合体と考えられ、印加磁界と
電気抵抗の関係は第2図に示す様に、抵抗零の状態から
ある磁界において突然抵抗が現われ、しかもその抵抗の
変化は極めて大きい。また突然抵抗が現われる磁界の大
きさ(閾値)は、このセラミック超電導磁気センサ1に
流す定電流の大きさによって制御することが出来る。
The ceramic superconducting magnetic sensor 1 used in the present invention is considered to be an assembly of Josephson junctions because the insulating layer and the point contact interposed in the grain boundary are weakly coupled, and the relationship between the applied magnetic field and the electric resistance is shown in FIG. As shown, a resistance suddenly appears in a magnetic field from the state of zero resistance, and the change in the resistance is extremely large. The magnitude of the magnetic field (threshold value) at which resistance suddenly appears can be controlled by the magnitude of the constant current flowing through the ceramic superconducting magnetic sensor 1.

一方、第1図に示すTi膜から構成してなる導体5に端
子e,fを介して10mAの電流を流すと、距離50μmの所で
は、0.4ガウスの磁界を得ることが出来る。したがっ
て、第2図に示す超電導磁気センサの特性から分るよう
に、本センサ1に端子a−bを介して2mAの定電流を流
し、0.4ガウスの磁界を作用させた場合、20μVの出力
を得ることが出来る。
On the other hand, when a current of 10 mA is applied to the conductor 5 composed of the Ti film shown in FIG. 1 through the terminals e and f, a magnetic field of 0.4 Gauss can be obtained at a distance of 50 μm. Therefore, as can be seen from the characteristics of the superconducting magnetic sensor shown in FIG. 2, when a constant current of 2 mA is applied to the sensor 1 through terminals a and b and a magnetic field of 0.4 gauss is applied, an output of 20 μV is obtained. You can get it.

以上の実験結果から、第1図に示す構造において、パ
ターンの形状を導体5の幅30μm,厚さ1μm,超電導磁気
センサ1との中心間距離50μmとした。
From the above experimental results, in the structure shown in FIG. 1, the pattern shape was such that the conductor 5 had a width of 30 μm, a thickness of 1 μm, and a center-to-center distance from the superconducting magnetic sensor 1 of 50 μm.

上記のような構成において、少なくとも超電導磁気セ
ンサ1を83K以下の温度に冷却した状態において、導体
5に電流を流さず、超電導磁気センサ1に磁界が加わら
ないときは、端子a,bを介してセンサ1に電流を流して
も超電導状態のため、端子c,d間に出力電圧は現われな
いが、端子e,fを介して導体12mAの定電流Iを流すこと
により、その電流の作る磁界が超電導体3の超電導状態
を破って抵抗性を示すので、第3図に示すように電流I
に対応して端子c,d間に出力電圧として0.5ピコ秒の速さ
で20μVの出力が得られた。なお、このとき超電導磁気
センサ1の端子a,b間の定電流は2mAとしていた。
In the above configuration, when at least the superconducting magnetic sensor 1 is cooled to a temperature of 83 K or less, no current is passed through the conductor 5 and no magnetic field is applied to the superconducting magnetic sensor 1, the terminals a and b are used. The output voltage does not appear between the terminals c and d even if a current is passed through the sensor 1 because it is in a superconducting state, but by passing a constant current I of a conductor 12 mA through the terminals e and f, the magnetic field created by the current is Since the superconductor 3 breaks the superconducting state and exhibits resistance, as shown in FIG.
Corresponding to the above, an output voltage of 20 μV was obtained between terminals c and d at a speed of 0.5 picoseconds. At this time, the constant current between the terminals a and b of the superconducting magnetic sensor 1 was 2 mA.

次に第4図に示すように超電導体3の近傍に2本の導
体5及び6を平行に設けて論理素子を構成した場合につ
いて説明する。
Next, as shown in FIG. 4, a case will be described in which two conductors 5 and 6 are provided in parallel in the vicinity of the superconductor 3 to form a logic element.

第4図は、導体6と導体5及び超電導磁気センサ1の
各々の中心間距離を50μmとし、また各々の幅を30μm,
30μm及び50μmにパターン形成した場合を示してお
り、この第4図に示す構成において、導体6に流す電流
が20mA程度で2mAの定電流を流した超電導磁気センサ1
の出力として20μVの値が得られた。
FIG. 4 shows that the conductors 6 and 5 and the superconducting magnetic sensor 1 have a center-to-center distance of 50 μm and a width of 30 μm.
It shows a case where a pattern is formed to 30 μm and 50 μm, and in the configuration shown in FIG. 4, the superconducting magnetic sensor 1 in which a constant current of 2 mA is passed when the current passed through the conductor 6 is about 20 mA.
A value of 20 μV was obtained as the output of

また、導体5及び6に流す電流I1及びI2を同方向と
し、導体5に流した電流I1により超電導体3に作用する
磁界をH1,導体6に流した電流I2により超電導体3に作
用する磁界をH2,超電導磁気センサ1の所定の定電流を
流している状態での臨界磁界をH0として H1<H0,H2<H0,H1+H2>H0 …(1) の条件のとき、導体5と6に同時に電流が流れたときだ
け、第5図に示すように端子c,d間に出力電圧が発生
し、ANDの論理出力となる。例えばI1として8mA,I2とし
て15mAの電流を導体5,6にそれぞれ流した場合、電流I1
とI2が同時に流れている期間のみ端子c,d間に20μV以
上の出力電圧が得られた。
The currents I 1 and I 2 flowing in the conductors 5 and 6 are in the same direction, and the magnetic field acting on the superconductor 3 by the current I 1 flowing in the conductor 5 is H 1 and the current I 2 flowing in the conductor 6 is the superconductor. Let H 2 be the magnetic field acting on 3 and H 0 be the critical magnetic field of the superconducting magnetic sensor 1 in the state where a predetermined constant current is flowing. H 1 <H 0 , H 2 <H 0 , H 1 + H 2 > H 0 Under the condition of (1), an output voltage is generated between the terminals c and d as shown in FIG. 5 only when currents simultaneously flow through the conductors 5 and 6, and an AND logic output is produced. For example, when currents of 8 mA for I 1 and 15 mA for I 2 are applied to conductors 5 and 6, respectively, the current I 1
An output voltage of 20 μV or more was obtained between the terminals c and d only during the period when I 2 and I 2 were flowing simultaneously.

また、H1>H0,H2>H0,|H1−H2|<H0 …(2) の条件で、第6図に示すように導体5と導体6に流す電
流I1,I2の方向を反対にすると、第7図に示すように端
子c,d間に電流I1,I2のいずれか一方のみが存在する期間
のみ端子c,d間に出力電圧が得られ、イクスクルーシブ
オアの論理出力が得られた。またこの電流条件のとき、
電流I1,I2を同方向に流した場合、OR論理出力が得られ
ることになる。
Further, H 1> H 0, H 2> H 0, | H 1 -H 2 | <H 0 ... under the condition of (2), the current I 1 flowing through the conductor 5 and the conductor 6 as shown in Figure 6, When the direction of I 2 is reversed, as shown in FIG. 7, the output voltage is obtained between the terminals c and d only during the period when only one of the currents I 1 and I 2 is present between the terminals c and d, The logical output of exclusive or is obtained. Also under this current condition,
When the currents I 1 and I 2 flow in the same direction, an OR logic output is obtained.

なお、上記の実施例にあっては電流値I1及びI2の値を
適宜選定するようになしているが、本発明はこれに限定
されるものではなく、例えば導体5及び6に流す電流値
I1及びI2を等しくかつ一定の値とし、超電導体3と導体
5または導体6の間隔を適宜選定して、上記(1)式ま
たは(2)式を満足する位置に導体5及び6を設けるよ
うになしても良い。
Although the current values I 1 and I 2 are appropriately selected in the above embodiment, the present invention is not limited to this. value
I 1 and I 2 are set to be equal and constant values, the distance between the superconductor 3 and the conductor 5 or 6 is appropriately selected, and the conductors 5 and 6 are placed at positions satisfying the above formula (1) or (2). It may be provided.

また超電導体3と導体5,6の配置関係は上記の実施例
に限定されるものではなく、第8図に示すように超電導
体3の両側に導体5及び6を配置しても良い。更に超電
導磁気センサの上にポリイミド樹脂やSiO2等の保護膜を
形成した上に導体5及び6を形成しても同様の作用効果
が得られる。更にこの場合、第9図(a)及び(b)に
示すように、ポリイミド膜やSiO等の保護膜10を介し
て、超電導体3と導体5及び6を交差(例えば直交)す
るように積層配置しても良いことは言うまでもない。
The arrangement relationship between the superconductor 3 and the conductors 5 and 6 is not limited to the above-mentioned embodiment, and the conductors 5 and 6 may be arranged on both sides of the superconductor 3 as shown in FIG. Further, the same action and effect can be obtained by forming the conductors 5 and 6 on the protective film such as polyimide resin or SiO 2 formed on the superconducting magnetic sensor. Further, in this case, as shown in FIGS. 9 (a) and 9 (b), the superconductor 3 and the conductors 5 and 6 are laminated so as to intersect (for example, orthogonally) through a protective film 10 such as a polyimide film or SiO. It goes without saying that they can be placed.

また、本発明の装置を作製する場合、上記した方法に
限定されるものではなく、導体5,6または超電導磁気セ
ンサ1をスパッタやMOCVDあるいは電子ビーム法等によ
る超電導薄膜で作成しても同様に結果を得ることが出
来、また加工形状の微細化をも期待することが出来る。
特に導体5及び6を超電導薄膜で形成した場合、超電導
磁気センサ1の超電導体3と同時に形成することが出
来、装置の作製工程が簡単化されることになる。
Further, when manufacturing the device of the present invention, the method is not limited to the above-mentioned method, and the conductors 5 and 6 or the superconducting magnetic sensor 1 may be formed of a superconducting thin film by sputtering, MOCVD, electron beam method or the like. It is possible to obtain the result and also to expect the miniaturization of the processed shape.
In particular, when the conductors 5 and 6 are formed of a superconducting thin film, they can be formed at the same time as the superconductor 3 of the superconducting magnetic sensor 1, and the manufacturing process of the device is simplified.

以下に、その実施例を第13図(a)乃至(c)にした
がって説明する。
The embodiment will be described below with reference to FIGS. 13 (a) to 13 (c).

本実施例に用いられるセラミック超電導体膜を作製す
るために、上述したように第10図に示す成膜装置におい
て、基板7を安定化ジルコニアとし、ヒーター9で基板
温度を400℃に保ちながら、Y(NO3・6H2O,Ba(N
O32,Cu(NO3・3H2OをY1Ba2Cu3O7-Xとなる様所定
量秤量し、硝酸塩水溶液を噴射装置11から断続的に基板
7に向けて5μm程度の厚さの一様な膜となる様に成膜
し、その後950℃で60分間,500℃で10時間の空気中アニ
ールを行なって、第13図(a)に示すように基板131の
全面に超電導膜132を成膜した。この様にして作製した
セラミック超電導膜の電気抵抗は、100Kから下がりはじ
め、83Kで完全に0になった。
In order to produce the ceramic superconductor film used in this example, in the film forming apparatus shown in FIG. 10 as described above, the substrate 7 was stabilized zirconia, the substrate temperature was kept at 400 ° C. by the heater 9, Y (NO 3) 3 · 6H 2 O, Ba (N
O 3) 2, Cu (NO 3) 2 · 3H the 2 O Y 1 Ba 2 Cu 3 O 7-X to become as weighed in predetermined amounts, towards the intermittently substrate 7 nitrate aqueous solution from the injection device 11 5 [mu] m The film is formed into a uniform film having a uniform thickness and then annealed in air at 950 ° C. for 60 minutes and 500 ° C. for 10 hours to remove the substrate 131 from the substrate 131 as shown in FIG. 13 (a). A superconducting film 132 was formed on the entire surface. The electric resistance of the ceramic superconducting film produced in this way began to drop from 100K and became completely 0 at 83K.

次に、このセラミック超電導体膜132を第13図(b)
及び(c)に示すように、電気的に分割するために、エ
ッチングを行なった。エッチングは、レジストを塗布
し、通常のフォトリソ工程を用い、リン酸系のエッチン
グ液を使用して行なって、電気的に分離された超電導膜
132a及び132bを得た。
Next, this ceramic superconducting film 132 is formed in FIG. 13 (b).
And as shown in (c), etching was performed for electrical division. The etching is performed by applying a resist, using a normal photolithography process, and using a phosphoric acid-based etching solution to electrically separate the superconducting film.
132a and 132b were obtained.

本実施例におけるセラミック超電導体膜は、粒界に介
在する絶縁層やポイントコンタクトが弱結合になり、ジ
ョセフソン接合の集合体と考えられ、印加磁界と電気抵
抗の関係は前述の第2図に示す様に抵抗0の状態からあ
る磁界において突然抵抗があらわれ、しかもその抵抗の
変化は極めて大きい。又、突然抵抗があらわれる磁界の
大きさは、超電導体に流す定電流の大きさによって制御
することができる。
The ceramic superconductor film in this example is considered to be an assembly of Josephson junctions because the insulating layer and the point contact interposed in the grain boundary are weakly coupled, and the relationship between the applied magnetic field and the electric resistance is shown in FIG. As shown, a resistance suddenly appears in a magnetic field from the state of resistance 0, and the change in the resistance is extremely large. Further, the magnitude of the magnetic field where the resistance suddenly appears can be controlled by the magnitude of the constant current flowing in the superconductor.

今、第13図(b)に示す電極ef間に10mAの電流を流す
と、距離50μmのところでは、0.4ガウスの磁界を得る
ことが出来る。したがって、第2図に示す超電導体の特
性から分る様に、電極ad間に2mAの定電流を流しておく
と、電極cd間に20μVの出力を得ることが出来る。
When a current of 10 mA is passed between the electrodes ef shown in FIG. 13 (b), a magnetic field of 0.4 gauss can be obtained at a distance of 50 μm. Therefore, as can be seen from the characteristics of the superconductor shown in FIG. 2, if a constant current of 2 mA is passed between the electrodes ad, an output of 20 μV can be obtained between the electrodes cd.

以上の実験結果からパターンの形状を、第13図(b)
の電流導体として作用する超電導膜132bの幅を約30μm,
超電導体132bと超電導体132aの中心間距離を50μmとし
た。
From the above experimental results, the shape of the pattern is shown in FIG. 13 (b).
The width of the superconducting film 132b that acts as a current conductor of about 30 μm,
The center-to-center distance between the superconductor 132b and the superconductor 132a was set to 50 μm.

その結果、素子を38K以下に冷却した状態において、e
f間に電流を流さないときは磁界の発生がないため、ad
間を通して超電導体132aに電流を流しても超電導状態の
ため、cd間に出力電圧は現われなかった。次に10mAの電
流をef間に流すことにより、その電流の作る磁界が超電
導体132aの超電導状態を破り、第3図に示す様に、cd間
に0.5ピコ秒の速さで20μVの出力を得ることが出来
た。但しこのときのab間の定電流は2mAである。
As a result, when the element is cooled below 38K, e
Since no magnetic field is generated when no current is passed between f,
Even if a current was passed through the superconductor 132a through the space, the output voltage did not appear between cd because of the superconducting state. Then, by passing a current of 10 mA between ef, the magnetic field created by the current breaks the superconducting state of the superconductor 132a, and as shown in FIG. 3, an output of 20 μV is generated between cd at a speed of 0.5 picoseconds. I was able to get it. However, the constant current between ab at this time is 2 mA.

次に、第13図(c)に示すパターンをフォトリソグラ
フ技術によって作成し、電流導体として機能する超電導
体132b,132cと磁気センサとして機能する超電導体132a
の中心間距離を50μm、巾をそれぞれ30μm,30μm,50μ
mとした。
Next, a pattern shown in FIG. 13 (c) is created by a photolithography technique, and superconductors 132b and 132c functioning as current conductors and a superconductor 132a functioning as a magnetic sensor are formed.
Center distance of 50μm, width of 30μm, 30μm, 50μ respectively
m.

この構成において、ab間に流す電流値を2mAとし、ef
間に10mAの電流を流すとcd間に出力20μVが得られた。
In this configuration, the value of the current flowing between ab is 2 mA, and ef
When a current of 10 mA was passed between them, an output of 20 μV was obtained between cd.

また、この第13図(c)において、電流導体として作
用する超電導体132b及び132cの電流を逆方向とし、超電
導体132bの電流値をI1,I超電導体132cの電流値をI2,超
電導体132aに出力電圧を生じさせるしきい値磁界(第11
図のBth)を与える電流値をI0とすると、 I1<I0,I2<I0,I1+I2>I0 ………(3) の条件のとき、超電導体132b及び132cに同時に電流が流
れたときだけ、cd間に出力電圧が発生する。従ってAND
の論理が行なわれる。
In FIG. 13 (c), the currents of the superconductors 132b and 132c acting as current conductors are set in opposite directions, the current value of the superconductor 132b is I 1 , the current value of the I superconductor 132c is I 2 , and the superconducting current is I 2 . A threshold magnetic field (11th magnetic field) that causes an output voltage in the body 132a.
If the current value that gives Bth) in the figure is I 0 , I 1 <I 0 , I 2 <I 0 , I 1 + I 2 > I 0 ……… (3) An output voltage is generated across cd only when current flows simultaneously. Therefore AND
The logic of.

また、 I1>I0,I2>I0,|I1−I2|<I0 …………(4) の条件で、超電導体132b及び132cの電流方向を同方向に
すると、電流I1,I2のいずれか一方のみが存在する期間
のみcd間に電圧が発生する。従ってイクスクルーシブOR
の論理が得られる。この電流条件のとき、電流を逆方向
にすればORの論理が得られる。
Further, if the current directions of the superconductors 132b and 132c are the same, under the condition of I 1 > I 0 , I 2 > I 0 , | I 1 −I 2 | <I 0 (4), A voltage is generated between cd only when only one of I 1 and I 2 is present. Therefore exclusive OR
Is obtained. Under this current condition, if the current is reversed, the OR logic is obtained.

上記の実施例では、磁気センサとして機能する超電導
体と、電流導体として機能する超電導体を電気的に分割
するために間の部分をエッチングによって除去したが、
間の部分の材質を絶縁体に改質しても同様の効果が得ら
れる。
In the above-mentioned embodiment, the superconductor which functions as a magnetic sensor and the superconductor which functions as a current conductor are removed by etching in order to electrically separate them.
Similar effects can be obtained by modifying the material of the portion between them to an insulator.

この絶縁体化する一例として第13図(a)の超電導膜
132に、第13図(b)及び(b)のパターン状のメタル
マスクをしえAsのイオン照射を行なった。その結果、照
射をうけた部分のみ絶縁体となって、エッチングによっ
て除去した場合と同様の素子特性を示した。イオン照射
によって超電導体が絶縁体化するのは、照射によるダメ
ージによって結晶構造が乱れ非晶質化したことによると
考えられる。
As an example of this insulating material, the superconducting film of FIG. 13 (a) is used.
As shown in FIGS. 13 (b) and 13 (b), 132 was exposed to As ions by using the patterned metal mask. As a result, only the irradiated portion became an insulator, and showed the same device characteristics as when removed by etching. The reason why the superconductor becomes an insulator by the ion irradiation is considered to be that the crystal structure is disordered and becomes amorphous due to the damage caused by the irradiation.

上記実施例は、基本動作の確認であるが、セラミック
超電導膜を電気的に分割する方法としては、機械的除去
(サンドブラスト等)、光エッチング,異種元素拡散に
よる膜質の改変等多くの方法が適用可能である。これら
の方法によって超電導膜が電気的に分割されていれば、
同様の効果が得られることは明らかである。
Although the above example is confirmation of the basic operation, many methods such as mechanical removal (sandblasting), photoetching, modification of film quality by diffusion of different elements, etc. are applied as a method of electrically dividing the ceramic superconducting film. It is possible. If the superconducting film is electrically divided by these methods,
It is clear that the same effect can be obtained.

また、本発明の実施例に用いたセラミック高温超電導
体膜はY1Ba2Cu3O7-Xとしたが、本発明はこれに限定され
るものではなく、粒界を有するものであれば、他の成分
の高温超電導体を用いても同様の結果が得られることは
言うまでもない。
Further, the ceramic high temperature superconductor film used in the examples of the present invention was Y 1 Ba 2 Cu 3 O 7-X , but the present invention is not limited to this, as long as it has a grain boundary. Needless to say, similar results can be obtained by using high-temperature superconductors containing other components.

また、作製された超電導体が粒界を有するセラミック
超電導体であれば、その作製方法は、スパッタ,電子ビ
ーム蒸着,CVD法等作製方法によらず、同様の効果が得ら
れることは言うまでもない。
Needless to say, if the produced superconductor is a ceramic superconductor having a grain boundary, the same effect can be obtained regardless of the production method such as sputtering, electron beam evaporation, or CVD method.

また、導体の配置関係は上記各実施例に限定されるも
のではない。
Further, the arrangement relationship of the conductors is not limited to the above embodiments.

<発明の効果> 以上のように本発明によれば、従来のように極めて薄
い絶縁層を人工的に作製するジョセフソン接合を用い
ず、セラミック超電導体に自然に介在する弱結合を利用
した超電導磁気センサを用いた論理回路処理に係わるも
のであり、導体の配置関係は上記した実施例のように平
面的に行なうことが出来る特徴を有すると共に、本発明
において用いる超電導磁気センサは磁界方向に特性依存
がなく、ジョセフソン接合形成工程を省略することが出
来るため、ポリイミド等の樹脂やSiO2等を保護膜とした
上に導体を容易に数多く作製することも可能となる。ま
た、本発明における電流導体及び磁気センサをセラミッ
ク超電導体膜を電気的に分割して構成した場合には、素
子の作製方法がさらに簡便になる。
<Advantages of the Invention> As described above, according to the present invention, superconductivity utilizing weak coupling that naturally intervenes in a ceramic superconductor without using a Josephson junction for artificially producing an extremely thin insulating layer as in the conventional art. The present invention relates to logic circuit processing using a magnetic sensor, and has a feature that conductors can be arranged in a plane as in the above-described embodiment, and the superconducting magnetic sensor used in the present invention has characteristics in the magnetic field direction. Since there is no dependency and the Josephson junction forming step can be omitted, it is possible to easily produce many conductors on top of resin such as polyimide or SiO 2 as a protective film. Further, when the current conductor and the magnetic sensor according to the present invention are configured by electrically dividing the ceramic superconductor film, the method of manufacturing the element is further simplified.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明のセラミック超電導装置の一実施例の構
成を示す平面図、第2図はセラミック超電導センサの特
性の一例を示す図、第3図は導体に流す電流による超電
導センサの出力応答を示す図、第4図は本発明のセラミ
ック超電導装置の他の実施例における電界を発生する導
体を複数本として各々の電流方向を同じ方向とした場合
の構成を示す平面図、第5図は第4図の構成による導体
の電流方向が同じ方向の場合の出力応答と導体の電流と
の関係を示す図、第6図は本発明の他の実施例における
電界を発生する2本の導体の電流方向が互いに逆の場合
の構成を示す図、第7図は第6図の構成による本発明実
施例装置の出力応答と導体に流す電流波形の関係を示す
図、第8図は本発明のセラミック超電導装置の更に他の
実施例の構成を示す平面図、第9図(a)及び(b)は
それぞれ本発明の更に他の実施例の構成を示す平面図及
び断面図、第10図は本発明の実施例装置の作製に用いた
セラミック超電導膜の作製装置の概略構成を示す図、第
11図は超電導磁気センサの特性の一例を示す図、第12図
は超電導磁気センサの等価回路を示す図、第13図(a)
乃至(c)はそれぞれ本発明の他の実施例を説明するた
めの装置構成斜視図である。 1……超電導磁気センサ、21,21……電流電極、22,22…
…電圧電極、3……超電導体、5,6……導体、131……基
板、132……超電導膜、132a……磁気センサとして機能
する超電導体、132b,132c……電流導体として機能する
超電導体、a〜h……電極端子。
FIG. 1 is a plan view showing the configuration of an embodiment of the ceramic superconducting device of the present invention, FIG. 2 is a diagram showing an example of the characteristics of the ceramic superconducting sensor, and FIG. 3 is the output response of the superconducting sensor due to the current flowing through the conductor. FIG. 4 is a plan view showing the structure of another embodiment of the ceramic superconducting device of the present invention in which a plurality of electric field generating conductors are provided and the current directions are the same, and FIG. FIG. 4 is a diagram showing the relationship between the output response and the current of the conductor when the current directions of the conductors are the same, and FIG. 6 shows two conductors that generate an electric field in another embodiment of the present invention. FIG. 7 is a diagram showing the configuration when the current directions are opposite to each other, FIG. 7 is a diagram showing the relationship between the output response of the device of the embodiment of the present invention having the configuration of FIG. 6 and the waveform of the current flowing through the conductor, and FIG. 8 is the diagram of the present invention. The structure of yet another embodiment of the ceramic superconducting device is shown. Plan views, FIGS. 9 (a) and 9 (b) are respectively a plan view and a cross-sectional view showing the structure of still another embodiment of the present invention, and FIG. 10 is a ceramic superconducting device used for manufacturing the device of the embodiment of the present invention. Diagram showing a schematic configuration of a film manufacturing apparatus,
FIG. 11 is a diagram showing an example of characteristics of the superconducting magnetic sensor, FIG. 12 is a diagram showing an equivalent circuit of the superconducting magnetic sensor, and FIG. 13 (a).
11A to 11C are perspective views of the apparatus configuration for explaining another embodiment of the present invention. 1 ... Superconducting magnetic sensor, 21,21 ... Current electrode, 22,22 ...
… Voltage electrode, 3 …… Superconductor, 5,6 …… Conductor, 131 …… Substrate, 132 …… Superconducting film, 132a …… Superconductor functioning as a magnetic sensor, 132b, 132c …… Superconducting functioning as current conductor Body, ah ... Electrode terminals.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 野島 秀雄 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 (56)参考文献 特開 昭62−115881(JP,A) 特開 昭59−17175(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hideo Nojima Hideo Nojima 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Within Sharp Corporation (56) References JP-A-62-115881 (JP, A) JP-A-59 -17175 (JP, A)

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】超電導材料の結晶粒界に存在する弱結合を
有し、少なくとも一対の電極を備えたセラミック超電導
体と、 上記セラミック超電導体の近傍に設けられた電流を流す
少なくとも1つの導体とを備え、 上記導体に流す電流により発生する磁界を上記セラミッ
ク超電導体と作用せしめるように構成してなることを特
徴とするセラミック超電導装置。
1. A ceramic superconductor having a weak bond existing in a crystal grain boundary of a superconducting material and provided with at least a pair of electrodes, and at least one conductor provided in the vicinity of the ceramic superconductor and flowing a current. A ceramic superconducting device, comprising: a magnetic field generated by an electric current flowing through the conductor;
【請求項2】前記セラミック超電導体と導体とを交差せ
しめるように配置してなることを特徴とする請求項1記
載のセラミック超電導装置。
2. The ceramic superconducting device according to claim 1, wherein the ceramic superconductor and the conductor are arranged so as to intersect with each other.
【請求項3】前記セラミック超電導体の近傍にそれぞれ
独立して電流を流す複数の導体を配置してなることを特
徴とする請求項1記載のセラミック超電導装置。
3. The ceramic superconducting device according to claim 1, wherein a plurality of conductors for independently passing an electric current are arranged in the vicinity of the ceramic superconductor.
【請求項4】基板と、該基板上に超電導材料の結晶粒界
に存在する弱結合を有するセラミック超電導膜とから成
り、該セラミック超電導膜は複数の部分に電気的に分割
され、該分割された少なくとも一つのセラミック超電導
膜に流す電流により発生する磁界を上記他の分割された
セラミック超電導膜と作用せしめるように構成されたこ
とを特徴とするセラミック超電導装置。
4. A substrate and a ceramic superconducting film having a weak bond existing at a crystal grain boundary of the superconducting material on the substrate, the ceramic superconducting film being electrically divided into a plurality of portions, and the divided portions. A ceramic superconducting device, characterized in that a magnetic field generated by a current flowing through at least one ceramic superconducting film is made to act on the other divided ceramic superconducting films.
JP63081993A 1988-02-10 1988-03-31 Ceramic superconducting device Expired - Fee Related JPH0810770B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP63081993A JPH0810770B2 (en) 1988-02-10 1988-03-31 Ceramic superconducting device
DE89301279T DE68906044T2 (en) 1988-02-10 1989-02-10 SUPRALOCIAL LOGICAL DEVICE.
EP89301279A EP0328398B1 (en) 1988-02-10 1989-02-10 Superconductive logic device
CN89101727A CN1054471C (en) 1988-02-10 1989-02-10 Superconductive logic device
US07/983,290 US5298485A (en) 1988-02-10 1992-11-30 Superconductive logic device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-29526 1988-02-10
JP2952688 1988-02-10
JP63081993A JPH0810770B2 (en) 1988-02-10 1988-03-31 Ceramic superconducting device

Publications (2)

Publication Number Publication Date
JPH01302784A JPH01302784A (en) 1989-12-06
JPH0810770B2 true JPH0810770B2 (en) 1996-01-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP63081993A Expired - Fee Related JPH0810770B2 (en) 1988-02-10 1988-03-31 Ceramic superconducting device

Country Status (1)

Country Link
JP (1) JPH0810770B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917175A (en) * 1982-07-20 1984-01-28 Aisin Seiki Co Ltd Detecting element of magnetic field for extremely low temperature
JPS62115881A (en) * 1985-11-15 1987-05-27 Agency Of Ind Science & Technol Magnetic field coupling type josephson integrated circuit

Also Published As

Publication number Publication date
JPH01302784A (en) 1989-12-06

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