JPH08148593A - Package for storing semiconductor devices - Google Patents

Abstract

(57) [Abstract] [Purpose] A semiconductor integrated circuit device is housed in an insulating container made of an insulating substrate and a lid in an airtight manner without deteriorating the characteristics of the semiconductor integrated circuit device. Provided is a package for accommodating a semiconductor element capable of operating normally for a long period of time. [Structure] An external lead terminal 7 is provided between an insulating substrate 1 and a lid 2.
A semiconductor element housing package for hermetically housing the semiconductor element 3 inside by bonding the insulating base body 1, the lid body 2 and the external lead terminal 7 with the glass members 5 and 6 with the glass member 5 interposed therebetween. , 6 lead oxide 35.0 to 55.0% by weight, bismuth oxide 5.0 to 15.0% by weight, boron oxide 2.0
To 6.0% by weight, aluminum oxide 1.0 to 3.0% by weight
15.0 to 35.0% by weight of a willemite compound as a filler in a glass component containing, and a lead titanate compound of 5.0
It was formed of glass added with ˜10.0% by weight.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element housing package for housing a semiconductor element, and more particularly to a glass sealed type semiconductor element housing package for sealing the package by glass welding. is there.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element, particularly a semiconductor integrated circuit element, is made of an electrically insulating material such as an aluminum oxide sintered body, and the semiconductor integrated circuit element is housed in the central portion. The semiconductor integrated circuit has a concave portion for forming a void and an insulating substrate having a glass member for sealing on its upper surface and an electrically insulating material such as an aluminum oxide sintered body. A lid body having a recess for forming a space for housing the element and a glass member for sealing is attached to the lower surface, and a semiconductor integrated circuit element housed inside is electrically connected to an external electric circuit. An external lead terminal for connecting the external lead terminal is formed by placing the external lead terminal on the upper surface of the insulating substrate and melting the glass member previously attached thereto. Then, the semiconductor integrated circuit element is attached and fixed to the concave portion of the insulating substrate, and each electrode of the semiconductor integrated circuit element is connected to an external lead terminal via a bonding wire. A product is obtained by melting and integrating a glass member for sealing, which has a lid and a main surface opposite to each other, adhered to each other, and hermetically sealing an insulating container composed of an insulating base and a lid. As a semiconductor device.

As the glass member for sealing, generally 56.0 to 66.0% by weight of lead oxide and 4.0 to 1 of boron oxide are used.
A glass component containing 4.0% by weight, silicon oxide 1.0 to 6.0% by weight, bismuth oxide 0.5 to 5.0% by weight, and zinc oxide 0.5 to 3.0% by weight, and a cordierite compound as a filler 9.0 to 19.0% by weight, tin titanate type Compound 10.0
Glasses containing up to 20.0% by weight are used.

[0004]

However, in this conventional package for accommodating semiconductor elements, the softening and melting temperature of the glass member that hermetically seals the insulating container is about 450.degree.
To some extent, recent semiconductor integrated circuit devices are becoming higher in density,
When the insulating base and the lid are joined with a glass member and the semiconductor integrated circuit element is hermetically housed inside the insulating container made of the insulating base and the lid because the heat resistance has decreased with the high integration. The heat of melting the glass member acts on the semiconductor integrated circuit element accommodated therein to cause deterioration of the characteristics of the semiconductor integrated circuit element, and the semiconductor integrated circuit element cannot operate normally. It was

Therefore, recently, a softening / melting temperature is 400 ° C. as a glass member for hermetically sealing an insulating container by joining an insulating base and a lid as a package for housing a semiconductor element.
The following are becoming required.

[0006]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to provide a semiconductor integrated circuit device inside an insulating container composed of an insulating substrate and a lid, and to prevent deterioration of characteristics of the semiconductor integrated circuit device. An object of the present invention is to provide a package for accommodating a semiconductor element, which can be hermetically accommodated without inviting the semiconductor integrated circuit element and can normally operate for a long period of time.

[0007]

According to the present invention, an external lead terminal is sandwiched between an insulating base and a lid, and a glass member is used to bond the insulating base, the lid and the external lead terminal to each other to form a semiconductor element inside. A package for housing a semiconductor element which is hermetically sealed, wherein the glass member is made of lead oxide 35.0 to 55.0% by weight, bismuth oxide 5.0 to 15.0% by weight, and boron oxide 2.
A glass component containing 0 to 6.0% by weight and aluminum oxide 1.0 to 3.0% by weight, 15.0 to 35.0% by weight of a willemite compound as a filler, and 5.
It is characterized by being formed of glass added with 0 to 10.0% by weight.

[0008]

According to the package for housing a semiconductor element of the present invention, lead oxide 35.0 to 55.0 is used as a glass member for sealing an insulating container composed of an insulating substrate and a lid and attaching external lead terminals to the insulating container. % By weight, bismuth oxide 5.0 to
15.0 to 35.0% by weight of a willemite compound as a filler and 5.0 to 10.0% by weight of a lead titanate compound were added to a glass component containing 15.0% by weight, boron oxide 2.0 to 6.0% by weight, and aluminum oxide 1.0 to 3.0% by weight. Since the glass whose softening and melting temperature is as low as 350 ° C. is used, the insulating base body, the lid body and the external lead terminal are joined by the glass member, and the semiconductor integrated circuit element is hermetically housed inside the insulating container composed of the insulating base body and the lid body. In this case, even if the heat for melting the glass member acts on the semiconductor integrated circuit element accommodated therein, the characteristics of the semiconductor integrated circuit element are not deteriorated, and as a result, the semiconductor integrated circuit element is normally operated for a long period of time. It becomes possible to operate.

[0009]

The present invention will now be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a package for housing a semiconductor device of the present invention, in which 1 is an insulating base and 2 is a lid. The insulating base 1 and the lid 2 constitute an insulating container 4 for housing the semiconductor integrated circuit element 3.

The insulating base 1 and the lid 2 are each provided with a recess at the center thereof for forming a space for accommodating the semiconductor integrated circuit element 3, and the bottom of the recess 1a of the insulating base 1 is a semiconductor integrated circuit. The element 3 is adhered and fixed via an adhesive such as glass, resin, or brazing material.

The insulating base 1 and the lid 2 are made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body.
For example, in the case of an aluminum oxide sintered body, a raw material powder prepared by adding and mixing an appropriate organic solvent and solvent to alumina (Al ₂ O ₃ ), silica (SiO ₂ ), calcia (CaO), magnesia (MgO), etc. It is produced by filling a press die corresponding to the shapes of the insulating substrate 1 and the lid body 2 shown in FIG. 1 and applying a constant pressure to perform molding, and then firing the molded product at a temperature of about 1600 ° C. It

Further, the insulating base 1 and the lid 2 are provided with glass members 5 and 6 each having a thickness of 0.3 in advance on their main surfaces facing each other.
The glass members 5 and 6 which are formed to have a thickness of about mm and are attached to the main surfaces of the insulating base body 1 and the lid body 2 are heated and melted and integrated to form the insulating base body 1 and the lid body. A semiconductor integrated circuit element 3 inside an insulating container 4 composed of
Are airtightly housed.

The glass members 5 and 6 adhered to the opposing main surfaces of the insulating base 1 and the lid 2 are made of lead oxide 35.0 to 55.0.
% By weight, bismuth oxide 5.0 to 15.0% by weight, boron oxide
A glass component containing 2.0 to 6.0% by weight and 1.0 to 3.0% by weight of aluminum oxide, 15.0 to 35.0% by weight of a willemite compound as a filler, and a lead titanate compound.
An insulating substrate 1 comprising a glass paste containing 5.0 to 10.0% by weight of glass powder, obtained by adding and mixing an appropriate organic solvent or solvent to the glass powder, by employing a well-known thick film technique such as screen printing. The main surfaces of the lid body 2 facing each other are adhered to a thickness of about 0.3 mm.

The glass members 5 and 6 made of the above-mentioned lead oxide, bismuth oxide, boron oxide, etc. have a softening melting temperature of 350.degree.
Therefore, when the semiconductor integrated circuit element 3 is hermetically housed inside the insulating container 4 including the insulating substrate 1 and the lid 2 by heating and melting the glass members 5 and 6 to integrate them, Even if the heat that melts 6 acts on the semiconductor integrated circuit element 3 housed therein, the characteristics of the semiconductor integrated circuit element 3 are not deteriorated, and as a result, the semiconductor integrated circuit element 3 operates normally for a long period of time. It becomes possible.

When the lead oxide (PbO) constituting the glass members 5 and 6 is less than 35.0% by weight, the softening and melting temperature of the glass becomes high, and the insulating container 4 is inserted through the glass members 5 and 6. When airtightly sealing, heat that softens and melts the glass members 5 and 6 causes characteristic deterioration of the semiconductor integrated circuit element 3, and if it exceeds 55.0% by weight, the chemical resistance of the glass deteriorates, and the gas of the insulating container 4 is deteriorated. Lead oxide (PbO) is specified in the range of 35.0 to 55.0% by weight because the reliability of the hermetic sealing is greatly reduced.

The amount of bismuth oxide (Bi ₂ O ₃ ) is
If it is less than 5.0% by weight, the softening and melting temperature of the glass becomes high, and when the insulating container 4 is hermetically sealed via the glass members 5, 6, the semiconductor integrated circuit element 3 is heated by the heat for softening and melting the glass members 5, 6. Bismuth oxide (Bi ₂ O ₃ ) is contained in the insulating container 4 because if it exceeds 15.0% by weight, the crystallization of the glass proceeds and the fluidity deteriorates, making it difficult to hermetically seal the insulating container 4. Is specified in the range of 5.0 to 15.0% by weight.

The amount of boron oxide (B ₂ O ₃ ) is 2.0
If it is less than wt%, the coefficient of thermal expansion of the glass will not match the coefficient of thermal expansion of the insulating substrate 1 and the lid 2. If it exceeds 6.0% by weight, the chemical resistance of the glass will deteriorate and the insulating container 4 will be hermetically sealed. Of boron oxide (B ₂ O
₃ ) is specified in the range of 2.0 to 6.0% by weight.

When the amount of aluminum oxide (Al ₂ O ₃ ) is less than 1.0% by weight, the softening and melting temperature of the glass becomes high, and when the insulating container 4 is hermetically sealed via the glass members 5 and 6, The heat that softens and melts the glass members 5 and 6 causes the semiconductor integrated circuit element 3 to deteriorate in characteristics, and 3.
If the amount exceeds 0% by weight, the chemical resistance of the glass deteriorates, and the reliability of the hermetic sealing of the insulating container 4 is greatly reduced. Therefore, the amount of aluminum oxide (Al ₂ O ₃ ) is in the range of 1.0 to 3.0% by weight. Specified.

If the amount of the willemite compound (2ZnO.SiO ₂ ) added as a filler is less than 15.0% by weight, the coefficient of thermal expansion of glass will not match the coefficient of thermal expansion of the insulating substrate 1 and the lid 2. If it exceeds 35.0% by weight, the fluidity of the glass deteriorates and it becomes difficult to hermetically seal the insulating container 4. Therefore, the willemite compound (2ZnO.SiO ₂ ) is specified in the range of 15.0 to 35.0% by weight. It

If the amount of the lead titanate compound added as a filler is less than 5.0% by weight, the coefficient of thermal expansion of glass does not match the coefficient of thermal expansion of the insulating substrate 1 and the lid 2, and 10.0% by weight. %, The fluidity of the glass deteriorates and it becomes difficult to hermetically seal the insulating container 4. Therefore, the amount of the lead titanate-based compound is specified in the range of 5.0 to 10.0% by weight.

An external lead terminal 7 made of a conductive material, for example, a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy is disposed between the insulating base 1 and the lid 2, and the external lead terminal 7 is provided. Each electrode of the semiconductor integrated circuit element 3 is electrically connected to the lead terminal 7 via a bonding wire 8. By connecting the external lead terminal 7 to an external electric circuit, the semiconductor integrated circuit element 3 is connected to the external electric circuit. Will be done.

The external lead terminal 7 has the insulating base 1 and the lid 2 at the same time when the insulating container 4 composed of the insulating base 1 and the lid 2 is hermetically sealed by melting and integrating the glass members 5 and 6.
It is attached and fixed between.

The external lead terminals 7 are manufactured by forming an ingot (lump) of iron-nickel-cobalt alloy or the like into a predetermined plate shape by using the conventionally known rolling and punching methods. .

The outer lead terminal 7 is formed by plating the outer surface of the outer lead terminal with a metal having good conductivity and corrosion resistance such as nickel and gold to a thickness of 1.0 to 20.0 μm by plating. Oxidation and corrosion of the terminal 7 can be effectively prevented, and good electrical continuity between the external lead terminal 7 and the external electric circuit can be achieved. Therefore, it is preferable that the outer lead terminal 7 is formed by plating the outer surface of the outer lead terminal 7 with a metal such as nickel and gold, which has good conductivity and corrosion resistance, to a thickness of 1.0 to 20.0 .mu.m.

Thus, according to this semiconductor element housing package, the semiconductor integrated circuit element 3 is adhered and fixed to the bottom surface of the concave portion 1a provided on the upper surface of the insulating substrate 1 with an adhesive agent, and each electrode of the semiconductor integrated circuit element 3 is fixed. Is connected to the external lead terminal 7 by the bonding wire 8, and then,
The insulating container 1 and the lid 2 are fused and integrated with the glass members 5 and 6 to which the principal surfaces of the insulating base 1 and the lid 2 opposite to each other have been previously adhered. The semiconductor integrated circuit element 3 is hermetically sealed in the inside 4 to form a semiconductor device as a final product.

The present invention is not limited to the above-mentioned embodiments, but various modifications can be made without departing from the gist of the present invention.

[0027]

According to the package for housing a semiconductor element of the present invention, an insulating container composed of an insulating base and a lid is sealed,
Further, as a glass member for attaching the external lead terminal to the insulating container, a glass component containing 35.0 to 55.0% by weight of lead oxide, 5.0 to 15.0% by weight of bismuth oxide, 2.0 to 6.0% by weight of boron oxide, and 1.0 to 3.0% by weight of aluminum oxide. Insulating substrate, lid, and external lead terminals were used because glass with low softening and melting temperature of 350 ° C was used in which 15.0 to 35.0% by weight of filler and 5.0 to 10.0% by weight of lead titanate compound were added as filler. When the semiconductor integrated circuit element is hermetically housed inside the insulating container composed of the insulating base and the lid, the heat for melting the glass member acts on the semiconductor integrated circuit element housed inside. The characteristics of the semiconductor integrated circuit element are not deteriorated, and as a result, the semiconductor integrated circuit element can be normally operated for a long period of time.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

[Explanation of symbols]

 1 ... Insulating substrate 2 ... Lid 3 ... Semiconductor integrated circuit element 4 ... Insulating container 5, 6 ... Glass member 7 ... External lead terminal

Claims (1)

[Claims] 1. A semiconductor element housing for hermetically accommodating a semiconductor element therein by sandwiching an external lead terminal between an insulating base and a lid, and joining the insulating base, lid and external lead terminal with a glass member. A glass component containing lead oxide of 35.0 to 55.0% by weight, bismuth oxide of 5.0 to 15.0% by weight, boron oxide of 2.0 to 6.0% by weight, and aluminum oxide of 1.0 to 3.0% by weight as a filler. A package for housing a semiconductor element, which is made of glass containing 15.0 to 35.0% by weight of a lead-based compound and 5.0 to 10.0% by weight of a lead titanate-based compound.