JPH08162012A - Electron-emitting device, electron source, image forming apparatus using the same, and manufacturing method thereof - Google Patents

Abstract

(57) [Summary] [Object] To provide a method of manufacturing a surface conduction electron-emitting device used as an electron source of an image forming apparatus or the like. In a method of manufacturing a surface conduction electron-emitting device in which an electron emitting portion 2 is provided in a conductive thin film 3 that connects device electrodes 4 and 5, an organic film is formed on a substrate 1 when a conductive thin film 3 is formed. The method is characterized by having a step of spraying and applying a metal solution from a nozzle. [Effect] A thin film having higher uniformity can be formed as compared with the conventional spinner method or dipping method, and when a large number of elements are formed at the same time, variations in characteristics between the elements can be reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface conduction electron-emitting device, an electron source provided with a plurality of such devices, and an image forming apparatus such as a display device and an exposure device configured by using the electron source. In particular, it relates to a manufacturing method thereof.

[0002]

2. Description of the Related Art A surface conduction electron-emitting device utilizes a phenomenon in which electron emission occurs when a current is passed through a conductive thin film formed on an insulating substrate in parallel with the film surface.

As a typical example of the structure of the surface conduction electron-emitting device, a conductive thin film such as a metal oxide which connects between a pair of device electrodes provided on an insulating substrate is referred to as forming in advance. The thing which formed the electron emission part by the electricity supply process is mentioned. Forming is done at both ends of the conductive thin film.
It is usually done by applying a voltage and energizing, locally destroying, deforming or altering the conductive thin film to change the structure,
This is a process of forming an electron emitting portion having a high electrical resistance. The electron emission is performed from the vicinity of the crack generated in the electron emitting portion by applying a voltage to the conductive thin film in which the electron emitting portion is formed and flowing a current.

Since the surface conduction electron-emitting device has a simple structure and is relatively easy to manufacture, it has an advantage that many arrays can be formed over a large area. Therefore, various applications for utilizing this feature are being researched. For example, it can be used for an image forming apparatus such as a charged beam source and a display device.

Conventionally, as an example in which a large number of surface conduction electron-emitting devices are formed in an array, surface conduction electron-emitting devices are arranged in parallel and both ends (both device electrodes) of each surface conduction electron-emitting device are wired. An electron source may be an electron source in which a plurality of rows (also referred to as a common wiring) are arranged in rows (also referred to as a ladder arrangement) (JP-A-64-31332 and JP-A-1-2).
No. 83749, Japanese Patent Laid-Open No. 2-257552).

Further, particularly in the case of the display device, a surface conduction electron emission device can be used as a self-luminous display device which can be a flat panel display device similar to the display device using liquid crystal and does not require a backlight. A display device has been proposed (US Pat. No. 5,066,883) in which an electron source in which a large number of elements are arranged and a phosphor which emits visible light when irradiated with an electron beam from the electron source are combined.

The material of the conductive thin film of the surface conduction electron-emitting device is not limited to metal compounds such as metal oxides, and many materials such as metal and carbon can be used. Among them, as a manufacturing method in the case of using a metal oxide, a method of forming a metal oxide film by heating and baking in the air after forming an organometallic thin film is a production technique compared to other thin film forming techniques. Research is progressing because of its great advantages.

FIG. 22 shows a conventional method of manufacturing a surface conduction electron-emitting device, taking as an example the method of applying an organic metal solution to form an organic metal thin film and then heating and baking it. Use to outline. The following steps a to
h corresponds to (a) to (h) in the figure.

Step a: The device electrodes 4 and 5 are formed on the substrate 1.

Step b: An organometallic solution is applied by a spinner method or a dipping method to form an organometallic thin film, which is heated and baked in a furnace at 300 ° C. for about 10 minutes to form a metal oxide film 2201. .

Step c: A resist 2202 is formed on this.

Step d: Exposure is performed using a photomask 2203 having a conductive thin film pattern.

Step e: Develop the resist 2202.

Step f: The metal oxide film 2201 other than the region to be the conductive thin film is dry-etched using Ar gas.

Step g: resist 22 using UV / O ₃
02 is removed to obtain the conductive thin film 3.

Step h: The forming process is performed to form the electron emitting portion 2 on the conductive thin film 3.

[0017]

The above-mentioned conventional manufacturing method has the following problems.

(1) The metal oxide film 2201 obtained by heating and baking the organometallic thin film formed by the spinner method in step b is likely to have nonuniform film quality due to the shape of the device electrodes 4 and 5. Also, the shape of the electron emitting portion 2 formed by forming the conductive thin film 3 obtained by patterning the metal oxide film 2201 is likely to vary. Since the film quality of the conductive thin film 3 and the shape of the electron emission portion 2 have a great influence on the electron emission characteristics of the surface conduction electron emission element, when a large number of surface conduction electron emission elements are formed, the characteristics of each element are It was easy for variations to occur.

(2) The film produced by the spinner method does not have very good adhesion to the substrate 1 and the device electrodes 4 and 5,
For example, the degree of freedom in device configuration such as forming the device electrodes 4 and 5 on the conductive thin film 3 is low.

(3) When the organometallic solution is applied by the spinner method or the dipping method, the organometallic thin film is formed on the entire surface of the substrate 1. Therefore, in order to obtain the conductive thin film 3 having a desired pattern shape, A step of patterning by a method such as etching to remove an unnecessary portion is required, which complicates the step. In particular, when a large number of surface conduction electron-emitting devices are used as an electron source for a display device or the like, it is important to reduce the defect occurrence rate of each element and increase the yield, but to reduce this defect occurrence rate. Therefore, if the device can be manufactured with a smaller number of steps, the achievement can be expected. Also, in order to reduce the manufacturing cost, reducing the number of steps can be expected to be effective.

(4) When manufacturing a large-area electron source or an image forming apparatus, it is necessary to use a large-sized substrate, but if an organometallic solution is applied to the substrate by using the spinner method, It is necessary to rotate such a large-sized substrate at a high speed, and a very large-scale device is required. Further, performing such work is extremely dangerous.

An object of the present invention is to improve the uniformity and adhesion of a conductive thin film in a surface conduction electron-emitting device having a conductive thin film provided with an electron emitting portion, an electron source using the same, and an image forming apparatus. An object of the present invention is to provide a manufacturing method which can improve and reduce variations in element characteristics.

Another object of the present invention is to reduce the number of steps in the surface conduction electron-emitting device, the electron source using the same, and the image forming apparatus, which can be manufactured safely and inexpensively with a simple apparatus and have a large area. It is to provide a manufacturing method suitable for commercialization.

[0024]

The present invention, which has been made to achieve the above object, provides a surface conduction electron-emitting device in which an electron-emitting portion is provided in a conductive thin film that connects a pair of device electrodes. Alternatively, in a method of manufacturing an image forming apparatus having an electron source including a plurality of the surface conduction electron-emitting devices on a substrate, or an image forming member for forming an image by irradiation of the electron sources and electron beams emitted from the electron source. The step of forming the conductive thin film has a step of spraying a solution containing a constituent element of the conductive thin film onto a substrate from a nozzle.

The present invention is further characterized in that, in the step of spraying a solution containing a constituent element of the conductive thin film from a nozzle, a shielding member having a pattern-shaped opening of the conductive thin film is arranged on the substrate. That is, the step of spraying the solution from the nozzle is a spray coating step, the step of spraying the solution from the nozzle is an airless spray coating step, and the step of spraying the solution from the nozzle is An electrostatic spray coating step, spraying the solution from a nozzle is an electrostatic spray coating and airless spray coating step, spraying the solution from a nozzle is an electrostatic spray coating step It also includes having a step of spinner coating of the solution after the step, and the solution being an organic palladium solution.

The present invention also resides in an electron-emitting device, an electron source, or an image forming apparatus obtained by the manufacturing method of the present invention.

The basic structure of the surface conduction electron-emitting device according to the present invention is as shown in FIG.
Is a substrate, 2 is an electron emitting portion, 3 is a conductive thin film including an electron emitting portion, and 4 and 5 are device electrodes. Further, the surface conduction electron-emitting device according to the present invention may have a configuration in which the device electrodes 4, 5 and the conductive thin film 3 are arranged in a vertical relationship opposite to the device configuration shown in FIG.

The substrate 1 is, for example, quartz glass or Na.
Examples thereof include glass having a reduced content of impurities such as blue glass, soda lime glass, a laminated body obtained by laminating SiO ₂ on soda lime glass by a sputtering method, and ceramics such as alumina.

As the material of the device electrodes 4 and 5 facing each other,
Common conductor materials are used, such as Ni, Cr, Au,
Metal or alloy such as Mo, W, Pt, Ti, Al, Cu and Pd, and printed conductor composed of metal or metal oxide such as Pd, Ag, Au, RuO ₂ , Pd-Ag and glass. , In ₂ O ₃ —SnO _{2 and} other transparent conductors, and polysilicon and other semiconductor conductor materials.

The element electrode spacing L, the element electrode length W, the shape of the conductive thin film 3 and the like are appropriately designed according to the applied form and the like.

The device electrode interval L is preferably several hundred Å to several hundred μm, and more preferably several μm to several depending on the voltage applied between the device electrodes 4 and 5 and the electric field strength capable of emitting electrons. It is 10 μm.

The device electrode length W is preferably several μm to several hundreds μm, and the device electrode thickness d is several hundred Å to several μm, considering the resistance value of the electrodes and the electron emission characteristics.

In order to obtain good electron emission characteristics, the conductive thin film 3 is particularly preferably a fine particle film composed of fine particles, and the thickness of the conductive thin film 3 depends on the step coverage to the device electrodes 4 and 5 and the device. It is appropriately set depending on the resistance value between the electrodes 4 and 5 and the forming conditions described later. The thickness of the conductive thin film 3 is preferably several Å to several thousand Å, particularly preferably 10 Å to 500 Å, and its resistance value is 10
The sheet resistance value is ³ to 10 ⁷ Ω / □.

As the material for forming the conductive thin film 3, for example, Pd, Pt, Ru, Ag, Au, Ti, In, C are used.
Metals such as u, Cr, Fe, Zn, Sn, Ta, W and Pb, PdO, SnO ₂ , In ₂ O ₃ , PbO, Sb ₂ O
Oxides such as ₃ HfB ₂ , ZrB ₂ , LaB ₆ , CeB
Borides such as ₆ , YB ₄ , GdB ₄ , TiC, ZrC, H
Carbides such as fC, TaC, SiC, WC, TiN, Zr
Examples include nitrides such as N and HfN, semiconductors such as Si and Ge, and carbon.

The fine particle film is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state where the fine particles are individually dispersed and arranged but also in a state where the fine particles are adjacent to each other or overlap each other (island shape). (Including)). In the case of a fine particle film, the particle diameter of the fine particles is preferably several Å to several thousand Å, particularly preferably 10 Å to 200 Å.

A crack is included in the electron emitting portion 2, and the electron is emitted from the vicinity of the crack. The electron emitting portion 2 including the crack and the crack itself are formed depending on the film thickness of the conductive thin film 3, the film quality, the material, the forming conditions described later, and the like. Therefore, the position and shape of the electron emitting portion 2 are not limited to the position and shape as shown in FIG.

The crack may have conductive fine particles having a particle diameter of several Å to several hundred Å. The conductive fine particles are the same as some or all of the elements of the material forming the conductive thin film 3. Further, the electron emitting portion 2 including a crack and the conductive thin film 3 in the vicinity thereof may contain carbon and a carbon compound.

An example of the manufacturing method of the present invention will be described below with reference to the manufacturing process chart of FIG. 2 by taking the surface conduction electron-emitting device having the structure shown in FIG. 1 as an example. In addition, steps a to d shown below
Corresponds to (a) to (d) of FIG.

Step a: After the substrate 1 is thoroughly washed with a detergent, pure water and an organic solvent, a device electrode material is deposited by a vacuum deposition method, a sputtering method or the like, and then by a photolithography technique or a lift-off method or the like. The device electrodes 4 and 5 having a desired pattern are formed on the surface of the substrate 1.

Step b: On the substrate 1 provided with the device electrodes 4 and 5, the organometallic solution containing the constituent elements of the electroconductive thin film 3 is sprayed from a nozzle (not shown) to form an organometallic thin film. The film is heated and baked in the atmosphere to form a thin film 21 made of metal oxide fine particles.

Step c: A region of the thin film 21 which becomes the conductive thin film 3 is masked with a resist, and the other region is etched out by dry etching using Ar gas or the like,
The resist is removed by UV / O ₃ ashing to form a conductive thin film 3 made of metal oxide fine particles having a desired pattern shape.

Step d: Subsequently, an energization process called forming is performed. When electricity is applied between the device electrodes 4 and 5 from a power source (not shown), the electron emitting portion 2 having a changed structure is formed at the portion of the conductive thin film 3. By this energization treatment, the conductive thin film 3 is locally destroyed, deformed or altered, and the electron-emissive portion 2 is a portion whose structure is changed.

According to the present invention, in the step b, the organometallic solution containing the constituent elements of the conductive thin film 3 is sprayed from the nozzle to form the organometallic thin film, so that the device electrodes 4, 5 are formed as in the conventional spinner method. The film is less likely to be affected by the shape and the like, and a more uniform film can be obtained.

The characteristics of the various spraying methods will be described.

The spray coating method is an ordinary air spray coating method, which is a method of pressurizing with air and spraying a liquid. When a small area is coated, it can be coated relatively uniformly, but when it is a large area. Will be non-uniform.

The airless spray coating method is a method of spraying without pressurizing air as described above, and since particles softly land on the substrate to be coated, they are more uniformly coated than the ordinary spray coating method. . Therefore, it is suitable for uniform coating on a large area, but the adhesion between the substrate and the coating film is not so good.

On the other hand, the electrostatic spray coating method is a method of electrostatically coating particles by giving an electric charge to the particles to be sprayed and making the substrate side oppositely charged, and covers the drawbacks of the former spray coating method. It is a method of uniformly coating over a large area. However, if the substrate has an insulating property, it may not be uniform in some cases.

In the present invention, the method of spraying the organometallic solution from the nozzle may be a spray coating method, an airless spray coating method, an electrostatic spray coating method, or a combination thereof. Among these, the electrostatic spray coating method is preferable because it can obtain a film having higher adhesion to the substrate.

The electrostatic spray coating method will be described with reference to FIG.

FIG. 13 shows the principle of the electrostatic spray coating method. In the figure, 131 is a nozzle for spraying an organometallic solution, 132 is a generator for atomizing the organometallic solution, and 133 is a reservoir for the organometallic solution. Storage tank, 13
4 is -1 for the organic metal atomized by the generator 132
A high-voltage DC power supply that charges 0 kV to -100 kV,
Reference numeral 135 is a support table on which the substrate 1 is placed. The nozzle 131 can scan the upper surface of the substrate 1 two-dimensionally at a constant speed. The substrate 1 is grounded.

In the above structure, the negatively charged organometallic fine particles are sprayed from the nozzle 131 and are accelerated and deposited toward the grounded substrate 1. For this reason,
A film having higher adhesiveness can be obtained as compared with the usual spray coating method.

As described above, in the electrostatic spray coating method, the fine particles are deposited while being accelerated by the potential distribution. Therefore, if the potential distribution is not uniform, the uniformity of the film is lost. For example, when the pattern formation of the device electrodes 4 and 5 is performed by a lift-off method, burrs are apt to occur at the edge portions of the device electrodes 4 and 5, and the potential distribution becomes discontinuous at the edge portions, and as shown in FIG. Organometallic thin film 1 near the edges of electrodes 4 and 5
41 may not be formed. In such cases,
It is preferable to combine the electrostatic spray coating method with the conventionally used spinner method or airless spray coating method.

In the manufacturing process shown in FIG. 2, in order to form a conductive thin film 3 having a desired pattern, an organic metal thin film is formed on the entire surface of the substrate 1 and then heated and baked to form the thin film 21.
Is formed (step b), and the thin film 21 is patterned (step c). However, as shown in FIG.
It is also possible to spray the organometallic solution 34 from the nozzle 33 onto the substrate 1 masked by the shielding member 32 having the pattern-shaped opening 31. Also in this case, by applying a voltage between the nozzle 33 and the shielding member 32, the fine droplets of the organometallic solution sprayed from the nozzle 33 are -10.
By charging to a voltage of about kV to −100 kV, accelerating, and spraying onto the substrate 1, it is possible to form a dense and uniform film having higher adhesion. Substrate 1 with shielding member 32 as described above
By masking the upper part, the patterning process described above becomes unnecessary, and the number of manufacturing processes can be reduced.

Further, in the manufacturing method of the present invention, the method of spraying from the nozzle at the time of applying the organometallic solution in the formation of the conductive thin film 3 of the surface conduction electron-emitting device is adopted. It is not necessary to rotate the substrate 1 as described above, and it is particularly effective when manufacturing an electron source in which a large number of surface conduction electron-emitting devices are arranged over a large area. That is, the danger of rotating the large-sized substrate 1 can be avoided, and a large-area electron source and an image forming apparatus using this electron source can be manufactured with a simple device at low cost.

Next, the above-mentioned forming process (see FIG. 2)
(See (d)) will be described in more detail.

FIG. 4 shows an example of the voltage waveform of the forming applied between the device electrodes 4 and 5.

The voltage waveform is particularly preferably a pulse waveform,
There are a case where a voltage pulse whose pulse peak value is a constant voltage is continuously applied (FIG. 4A) and a case where a voltage pulse is applied while increasing the pulse peak value (FIG. 4B).

First, the case where the pulse peak value is a constant voltage will be described. In FIG. 4A, T1 and T2 are the pulse width and pulse interval of the voltage waveform, for example, T1 is 1 μsec to 10 msec, T2 is 10 μsec to 100 msec,
The peak value (peak voltage at the time of forming) is appropriately selected according to the form of the surface conduction electron-emitting device described above, and a suitable vacuum degree, for example, in a vacuum atmosphere of about 1 × 10 ⁻⁵ Torr. Apply for several seconds to several tens of minutes. The voltage waveform to be applied is not limited to the illustrated triangular wave, and a desired waveform such as a rectangular wave can be used.

Next, the case where the voltage pulse is applied while increasing the pulse peak value will be described. T1 and T2 in FIG. 4 (b) are the same as those in FIG. 4 (a), and the peak value (peak voltage during forming) is increased by, for example, about 0.1 V step, and FIG. The application is performed under an appropriate vacuum atmosphere similar to the description of 1.

In the pulse interval T2, the conductive thin film 3
(See FIG. 1) The element current is measured at a voltage that does not locally destroy, deform, or alter the properties, for example, a voltage of about 0.1 V to obtain a resistance value. For example, when a resistance of 1 M ohm or more is exhibited, forming is performed. Can be finished.

It is preferable to further perform an activation step.

The activation step is, for example, 10 ⁻⁴ to 10 ⁻⁵ T.
As with the description in the forming step, it means a process of repeating the application of pulses with a pulse peak value of a constant voltage at a degree of vacuum of about orr, which is used to remove carbon and carbon compounds from an organic substance existing in a vacuum atmosphere. Discharge part 2 (see FIG. 1)
This is a process in which the state of device current and emission current can be remarkably improved by depositing on. This activation process is performed while measuring the device current and the emission current, for example,
For example, it is effective to end the emission current when saturated, which is preferable. The pulse peak value in the activation step is preferably the peak value of the drive voltage applied when driving the element.

The carbon and the carbon compound are graphite (both single crystal and polycrystal) and amorphous carbon (amorphous carbon and a mixture of polycrystal graphite and amorphous carbon). The deposited film thickness is preferably 500 Å or less, more preferably 300 Å or less.

The basic characteristics of the surface conduction electron-emitting device of the present invention thus obtained will be described below.

FIG. 5 is a schematic block diagram showing an example of a measurement / evaluation system for measuring the electron emission characteristics of the surface conduction electron-emitting device. First, the measurement / evaluation system will be described.

5, the same reference numerals as those in FIG. 1 indicate the same members. Further, 51 is a power supply for applying a device voltage Vf to the device, 50 is an ammeter for measuring a device current If flowing through the conductive thin film 3 between the device electrodes 4 and 5, and 54 is an electron emitting portion 2. An anode electrode for trapping the emission current Ie generated, 53 is a high-voltage power supply for applying a voltage to the anode electrode 54, and 52 is a measurement of the emission current Ie emitted from the electron emission portion 5. An ammeter, 55 is a vacuum device, and 56 is an exhaust pump.

The surface conduction electron-emitting device, the anode electrode 54, etc. are installed in a vacuum device 55.
Is equipped with necessary equipment such as a vacuum gauge (not shown),
The surface conduction electron-emitting device can be measured and evaluated under a desired vacuum.

The exhaust pump 56 is composed of a normal high vacuum system such as a turbo pump and a rotary pump, and an ultra high vacuum system such as an ion pump.
The entire vacuum device 55 and the substrate 1 of the surface conduction electron-emitting device can be heated up to about 200 ° C. by a heater. It should be noted that this measurement / evaluation system uses a vacuum device 55 for the display panel and the inside thereof at the stage of assembling the display panel (see 201 in FIG. 8) as described later.
And the inside thereof, it can be applied to the measurement evaluation and processing in the above-mentioned forming step and activation step.

The basic characteristics of the surface conduction electron-emitting device described below are that the voltage of the anode electrode 54 of the measurement and evaluation system is 1 kV to 10 kV and the distance H between the anode electrode 54 and the surface conduction electron-emitting device is H. Is usually set to 2 mm to 8 mm, and the normal measurement is performed.

First, the emission current Ie and the device current If,
FIG. 6 (solid line in the figure) shows a typical example of the relationship of the element voltage Vf.
Shown in In FIG. 6, the emission current Ie is the device current Ie.
Since it is significantly smaller than f, it is shown in arbitrary units.

As is apparent from FIG. 6, the surface conduction electron-emitting device has the following three characteristic characteristics with respect to the emission current Ie.

First, in the surface conduction electron-emitting device, when a device voltage Vf higher than a certain voltage (called threshold voltage: Vth in FIG. 6) is applied, the emission current Ie rapidly increases, while At the threshold voltage Vth or less, the emission current Ie is hardly detected. That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie has a characteristic of monotonically increasing with respect to the element voltage Vf (referred to as MI characteristic), the emission current Ie can be controlled by the element voltage Vf.

Thirdly, the emitted charges captured by the anode electrode 54 (see FIG. 5) depend on the time for applying the device voltage Vf. That is, the amount of charges captured by the anode electrode 54 can be controlled by the time for which the device voltage Vf is applied.

The characteristic shown by the solid line in FIG. 6 is the emission current Ie.
Has an MI characteristic with respect to the element voltage Vf, and at the same time, the element current If also has an MI characteristic with respect to the element voltage Vf. However, as indicated by a broken line in FIG. 6, the element current If becomes the element voltage Vf. On the other hand, it may exhibit a voltage control type negative resistance characteristic (called a VCNR characteristic). Which characteristic is exhibited is
It depends on the manufacturing method of the device and the measurement conditions at the time of measurement. However,
Even if the device current If has a VCNR characteristic with respect to the device voltage Vf, the emission current Ie is M with respect to the device voltage Vf.
It has the I characteristic.

Due to the characteristic characteristics of the surface conduction electron-emitting device of the present invention as described above, even in an electron source or an image forming apparatus in which a plurality of devices are arranged, the amount of emitted electrons can be easily adjusted according to an input signal. Since it can be controlled, it can be applied to various fields.

Next, the arrangement of the surface conduction electron-emitting devices in the electron source of the present invention will be described.

As a method of arranging the surface conduction electron-emitting devices in the electron source of the present invention, in addition to the ladder-type arrangement as described in the section of the prior art, n Ys are arranged on m X-direction wirings. There is an arrangement method in which directional wirings are provided via an interlayer insulating layer and an X-direction wiring and a Y-direction wiring are connected to a pair of device electrodes of the surface conduction electron-emitting device. This is hereinafter referred to as a simple matrix arrangement. First, this simple matrix arrangement will be described in detail.

According to the basic characteristics of the surface conduction electron-emitting device described above, when the applied device voltage Vf exceeds the threshold voltage Vth, the electron is generated at the peak value and pulse width of the applied pulsed voltage. The amount of release can be controlled. On the other hand, below the threshold voltage Vth, almost no electrons are emitted. Therefore, even when a large number of surface conduction electron-emitting devices are arranged, it becomes possible to apply a pulsed voltage controlled according to an input signal only by simple matrix wiring, select individual devices and drive them independently. .

The simple matrix arrangement is based on the above principle, and the structure of the electron source of the simple matrix arrangement, which is an example of the electron source of the present invention, will be further described with reference to FIG.

In FIG. 7, the substrate 1 is a glass plate or the like as described above, and the number and shape of the surface conduction electron-emitting devices 104 arranged on the substrate 1 are appropriately set according to the application. Is.

The m X-direction wirings 102 have external terminals DX1, DX2, ... DXm, respectively.
A conductive metal or the like formed on the upper surface by a vacuum deposition method, a printing method, a sputtering method, or the like. In addition, the material, so that the voltage is supplied almost evenly to the large number of surface conduction electron-emitting devices 104,
The film thickness and wiring width are set.

The n Y-direction wirings 103 each have external terminals DY1, DY2, ... DYn, and are formed similarly to the X-direction wirings 102.

These m X-direction wirings 102 and n Y-wirings
An interlayer insulating layer (not shown) is provided between the directional wirings 103 and electrically separated to form a matrix wiring. In addition, both m and n are positive integers.

The interlayer insulating layer (not shown) is SiO ₂ or the like formed by a vacuum evaporation method, a printing method, a sputtering method or the like, and has a desired shape on the entire surface or a part of the substrate 1 on which the X-direction wiring 102 is formed. In particular, the film thickness, material, and manufacturing method are appropriately set so as to withstand the potential difference at the intersection of the X-direction wiring 102 and the Y-direction wiring 103. The X-direction wiring 102 and the Y-direction wiring 103 are drawn out as external terminals.

Furthermore, the opposing device electrodes (not shown) of the surface conduction electron-emitting device 104 are m number of X-direction wirings 102.
And n Y-direction wirings 103, a vacuum deposition method, a printing method,
Connection 1 made of a conductive metal or the like formed by a sputtering method or the like
05 are electrically connected.

Here, the m number of X-direction wirings 102, the n number of Y-direction wirings 103, the connection 105, and the opposing element electrodes may have the same or partial constituent elements. Further, they may be different from each other, and are appropriately selected from the above-mentioned material of the device electrode and the like. The wiring to these element electrodes may be generically referred to as an element electrode when the same material as the element electrode is used. The surface conduction electron-emitting device 104 may be formed either on the substrate 1 or on an interlayer insulating layer (not shown).

Further, as will be described later in detail, a scanning signal is applied to the X-direction wiring 102 in order to scan the rows of the surface conduction electron-emitting devices 104 arranged in the X-direction according to an input signal. A scanning signal applying means (not shown) is electrically connected.

On the other hand, a modulation signal (not shown) is applied to the Y-direction wiring 103 in order to modulate each row of the surface conduction electron-emitting devices 104 arranged in the Y-direction according to an input signal. The signal applying means is electrically connected. The drive voltage applied to each surface conduction electron-emitting device 104 is supplied as a difference voltage between the scanning signal and the modulation signal applied to the surface conduction electron-emitting device.

Next, an example of the image forming apparatus of the present invention using the electron source of the present invention having the above simple matrix arrangement will be described with reference to FIGS. 8 is a basic configuration diagram of the display panel 201, FIG. 9 is a diagram showing the fluorescent film 114, and FIG. 10 is the display panel 201 of FIG.
It is a block diagram showing an example of a drive circuit for performing a television display according to an SC system television signal.

In FIG. 8, 1 is a substrate of an electron source in which the surface conduction electron-emitting devices are arranged as described above, 111 is a rear plate to which the substrate 1 is fixed, and 116 is a glass substrate 1.
The fluorescent film 114, which is an image forming member, is formed on the inner surface of 13.
And a face spray formed with a metal back 115 and the like.
Reference numeral 112 is a support frame. The rear plate 111, the support frame 112, and the face plate 116 are sealed by applying frit glass or the like to their joints and firing at 400 ° C. to 500 ° C. for 10 minutes or more in the air or a nitrogen atmosphere. Then, the outer envelope 118 is constructed.

In FIG. 8, reference numerals 102 and 103 denote X-direction wirings and Y-direction wirings connected to the pair of device electrodes 4 and 5 (see FIG. 1) of the surface conduction electron-emitting device 104, which are external terminals Dx1 to Dxm, respectively. , Dy1 to Dyn.

The envelope 118 is composed of the face plate 116, the support frame 112, and the rear plate 111 as described above. However, the rear plate 111 is provided mainly for the purpose of reinforcing the strength of the substrate 1, and when the substrate 1 itself has sufficient strength, the rear plate 1 is a separate body.
11, the support frame 112 may be directly sealed to the substrate 1, and the face plate 116, the support frame 112, and the substrate 1 may constitute the envelope 118. Further, by further installing a support body (not shown) called a spacer between the face plate 116 and the rear plate 111, it is possible to form the envelope 118 having sufficient strength against atmospheric pressure.

In the case of monochrome, the fluorescent film 114 is composed of only the phosphor 122, but in the case of color, the phosphor 1 is used.
22 stripes, black stripes (Fig. 9 (a))
Alternatively, it is composed of a black conductive material 121 called a black matrix (FIG. 9B) and the like, and a phosphor 122.
The purpose of providing the black stripes and the black matrix is to provide each of the three primary color phosphors 12 required for color display.
It is to make the color-mixed portions between the two black so as to make the color mixture inconspicuous and to suppress the deterioration of the contrast due to the reflection of external light on the fluorescent film 114. Black conductive material 12
As the material of No. 1, not only a commonly used material containing graphite as a main component, but also another material can be used as long as it is a material having conductivity and little transmission and reflection of light.

As a method of applying the phosphor 122 to the glass substrate 113, a precipitation method or a printing method is used regardless of monochrome or color.

Further, as shown in FIG.
A metal back 115 is usually provided on the inner surface side of 4.
The purpose of the metal back 115 is to allow the light emitted from the phosphor 122 (see FIG. 9) toward the inner surface side to face the face plate 11.
6 to improve the brightness by specular reflection, to act as an electrode for applying an electron beam accelerating voltage from the high voltage terminal Hv, and to prevent damage due to collision of negative ions generated in the envelope 118. For example, protection of the fluorescent substance 122 from the light. The metal back 115 can be manufactured by performing smoothing processing (usually called filming) on the inner surface of the fluorescent film 114 after manufacturing the fluorescent film 114, and then depositing Al by vacuum vapor deposition or the like.

The face plate 116 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 114 in order to further enhance the conductivity of the fluorescent film 114.

When the above-mentioned sealing is performed, in the case of a color, the phosphors 122 of the respective colors have to correspond to the surface conduction electron-emitting devices 104, so that it is necessary to perform sufficient alignment.

The inside of the envelope 118 is sealed through a vacuum degree of about 10 ⁻⁷ Torr through an exhaust pipe (not shown).
Further, the getter process may be performed immediately before or after the envelope 118 is sealed. This is to heat a getter (not shown) arranged at a predetermined position in the envelope 118 by a heating method such as resistance heating or high frequency heating.
This is a process of forming a vapor deposition film. The getter usually contains Ba or the like as a main component.
^{This is} for maintaining a vacuum degree of ^-5 to 10 ^-7 Torr.

Incidentally, the above-mentioned forming process and the subsequent manufacturing process of the surface conduction electron-emitting device are usually performed in the envelope 1.
It is performed immediately before or after the sealing of 18, and the content thereof is as described above.

The display panel 201 described above is shown in FIG.
It can be driven by a driving circuit as shown in FIG.
In FIG. 10, 201 is the display panel,
202 is a scanning circuit, 203 is a control circuit, 204 is a shift register, 205 is a line memory, 206 is a sync signal separation circuit, 207 is a modulation signal generator, and Vx and Va are DC voltage sources.

As shown in FIG. 10, the display panel 20
1 is connected to an external electric circuit via the external terminals Dx1 to Dxm, the external terminals Dy1 to Dyn, and the high-voltage terminal Hv. Of these, the external terminals Dx1 to Dx
In xm, a surface conduction electron-emitting device provided in the display panel 201, that is, a group of surface conduction electron-emitting devices arranged in a matrix of m rows and n columns is sequentially arranged for each row (n elements). A scanning signal for driving is applied.

On the other hand, the external terminals Dy1 to Dyn are connected to
A modulation signal for controlling the output electron beam of each element in one row selected by the scanning signal is applied. Further, the high voltage terminal Hv is, for example, 10 kV from the DC voltage source Va.
DC voltage is supplied. This is an accelerating voltage for giving enough energy to excite the phosphor to the electron beam output from the surface conduction electron-emitting device.

The scanning circuit 202 has therein m switching elements (schematically shown by S1 to Sm in FIG. 10).
Each of the switching elements S1 to Sm selects either the output voltage of the DC voltage source Vx or 0V (ground level) and is electrically connected to the external terminals Dx1 to Dxm of the display panel 201. It is a thing. Each of the switching elements S1 to Sm includes a control circuit 203.
It operates on the basis of the control signal Tscan output from the device, and in fact, it can be easily configured by combining elements having a switching function such as an FET.

In the DC voltage source Vx in this example, the drive voltage applied to the unscanned surface conduction electron-emitting device is based on the characteristics (threshold voltage) of the surface conduction electron-emitting device. It is set to output a constant voltage that is less than or equal to the value voltage.

The control circuit 203 has a function of matching the operation of each part so that an appropriate display is performed based on an image signal input from the outside. The synchronization signal Tsyn sent from the synchronization signal separation circuit 206 described below
Based on c, Tscan, Tsft, and Tmry control signals are generated for each unit.

The sync signal separation circuit 206 is a circuit for separating a sync signal component and a luminance signal component from an NTSC television signal inputted from the outside, and as is well known, a frequency separation (filter ) Using a circuit,
It can be easily constructed. Sync signal separation circuit 206
The synchronizing signal separated by means of a vertical synchronizing signal and a horizontal synchronizing signal are also well known. Here, for convenience of explanation, it is shown as Tsync. On the other hand, the luminance signal component of the image separated from the television signal is referred to as D for convenience.
This is shown as an ATA signal. This DATA signal is input to the shift register 204.

The shift register 204 is for serially / parallel converting the DATA signal serially input in time series for each line of the image, and based on the control signal Tsft sent from the control circuit 203. Operate. The control signal Tsft is supplied to the shift register 20.
In other words, it may be said that the shift clock is four. Also,
One line of serial / parallel converted image (corresponding to driving data for n elements of the surface conduction electron-emitting device)
Data is output from the shift register 204 as n parallel signals Id1 to Idn.

The line memory 205 is a storage device for storing data for one line of the image for a required time, and stores the contents of Id1 to Idn in accordance with the control signal Tmry sent from the control circuit 203. The stored contents are output as I′d1 to I′dn and input to the modulation signal generator 207.

The modulation signal generator 207 is a signal line for appropriately driving and modulating each of the surface conduction electron-emitting devices according to each of the image data I'd1 to I'dn.
The output signal is applied to the surface conduction electron-emitting device in the display panel 201 through the external terminals Dy1 to Dyn.

As described above, the surface conduction electron-emitting device has a clear threshold voltage for electron emission, and electron emission occurs only when a voltage exceeding the threshold voltage is applied. For voltages exceeding the threshold voltage,
The emission current also changes according to the change in the voltage applied to the surface conduction electron-emitting device. The value of the threshold voltage and the degree of change of the emission current with respect to the applied voltage may be changed by changing the material, structure, and manufacturing method of the surface conduction electron-emitting device. I can say things.

That is, when a pulsed voltage is applied to the surface conduction electron-emitting device, electron emission does not occur even if a voltage below the threshold voltage is applied, but a voltage exceeding the threshold voltage is applied. If it does, electron emission occurs. At that time, firstly, it is possible to control the intensity of the output electron beam by changing the peak value of the voltage pulse. Secondly, it is possible to control the total amount of charges of the output electron beam by changing the width of the voltage pulse.

Therefore, as a method of modulating the surface conduction electron-emitting device according to an input signal, there are a voltage modulation method and a pulse width modulation method. In the case of performing the voltage modulation method, the modulation signal generator 207 uses a voltage modulation method circuit that generates a voltage pulse of a constant length, but can appropriately modulate the pulse peak value according to the input data. In the case of performing the pulse width modulation method, the modulation signal generator 207 generates a voltage pulse having a constant peak value, but a circuit of the pulse width modulation method capable of appropriately modulating the pulse width according to the input data is used. To use.

The shift register 204 and the line memory 20
5 may be of a digital signal type or an analog signal type as long as it can perform serial / parallel conversion and storage of an image signal at a predetermined speed.

When the digital signal type is used, it is necessary to convert the output signal DATA of the sync signal separation circuit 206 into a digital signal. This can be done by providing an A / D converter at the output of the sync signal separation circuit 206.

Also in connection with this, the line memory 20
Depending on whether the output signal of 5 is a digital signal or an analog signal,
The circuit provided in the modulation signal generator 207 is slightly different.

That is, in the case of the voltage modulation method using a digital signal, for example, a well-known D / A conversion circuit may be used as the modulation signal generator 207, and an amplification circuit or the like may be added if necessary. Further, in the case of a pulse width modulation method using a digital signal, the modulation signal generator 207, for example, a high-speed oscillator and a counter (counter) that counts the number of waves output by the oscillator, and the output value of the counter and the output value of the memory. It can be easily configured by using a circuit in which comparators for comparison are combined. Further, if necessary, an amplifier for voltage-amplifying the pulse-width-modulated modulation signal output from the comparator to the drive voltage of the surface conduction electron-emitting device may be added.

On the other hand, in the case of the voltage modulation method using analog signals, the modulation signal generator 207 may be, for example, an amplifier circuit using a well-known operational amplifier or the like, and a level shift circuit or the like may be added if necessary. May be. Further, in the case of the pulse width modulation method using an analog signal, for example, a well-known voltage controlled oscillation circuit (VCO) may be used, and the voltage is amplified to the drive voltage of the surface conduction electron-emitting device as necessary. May be added.

The image forming apparatus of the present invention having the display panel 201 and the driving circuit as described above has the external terminals Dx1 to Dx1.
By applying a voltage from Dxm and Dy1 to Dyn, an electron can be emitted from any electron-emitting device 104, and a high voltage is applied to the metal back 115 or a transparent electrode (not shown) through the high-voltage terminal Hv. Bee
A television display can be performed according to an NTSC television signal by excitation / light emission caused by accelerating the beam and causing the accelerated electron beam to collide with the fluorescent film 114.

The above-described structure is a schematic structure necessary for obtaining the image forming apparatus of the present invention used for display or the like, and the detailed parts such as the material of each member are limited to the above contents. However, it is appropriately selected so as to suit the purpose of the image forming apparatus. Further, although the NTSC system has been taken as an example of the input signal, the image forming apparatus of the present invention is not limited to this, and other systems such as PAL and SECAM systems may be used, and more scanning lines than these may be used. The TV signal may be a high-definition TV system such as the MUSE system.

Next, an example of the above-mentioned ladder-type electron source and an image forming apparatus of the present invention using the electron source will be described with reference to FIGS. 11 and 12.

In FIG. 11, 1 is a substrate, 104 is a surface conduction electron-emitting device, and 304 is a common wiring for connecting the surface conduction electron-emitting device 104. Ten common wirings are provided, each having external terminals D1 to D10. are doing.

The surface conduction electron-emitting device 104 is the substrate 1
A plurality of them are arranged in parallel on the top. This is called an element row. A plurality of these element rows are arranged to form an electron source.

Each element row can be independently driven by applying an appropriate drive voltage between the common wiring 304 of each element row (for example, the common wiring 304 of the external terminals D1 and D2). That is, a voltage exceeding the threshold voltage may be applied to the element row where the electron beam is desired to be emitted, and a voltage lower than the threshold voltage may be applied to the element row where the electron beam is not desired to be emitted. The application of such a driving voltage is performed on the common wirings D2 to D9 located between the element rows by the common wirings 304 adjacent to each other, that is, the external terminals D adjacent to each other.
The common wiring 304 of 2 and D3, D4 and D5, D6 and D7, and D8 and D9 can also be formed as an integrated same wiring.

FIG. 12 is a diagram showing the structure of a display panel 301 having the above-mentioned ladder-type electron sources.

In FIG. 12, 302 is a grid electrode,
Reference numeral 303 is an opening through which electrons pass, D1 to Dm are external terminals for applying a voltage to each surface conduction electron-emitting device, and G1 to Gn are terminals connected to the grid electrode 302. Further, the common wiring 304 between each element row is formed on the substrate 1 as an integrated single wiring.

In FIG. 12, the same reference numerals as those in FIG. 8 indicate the same members, and a big difference from the display panel 201 using the electron source of the simple matrix arrangement shown in FIG. The point is that the grid electrode 302 is provided between 116.

The grid electrode 302 is provided between the substrate 1 and the face plate 116 as described above. The grid electrode 302 is capable of modulating the electron beam emitted from the surface conduction electron-emitting device 104, and the electron beam is applied to the stripe-shaped electrodes provided orthogonally to the device rows in the ladder type arrangement. To pass
A circular opening 303 is provided for each of the surface conduction electron-emitting devices 104.

The shape and arrangement position of the grid electrode 302 are
The shape is not necessarily shown in FIG. 12, and a large number of openings 303 may be provided in a mesh shape, and the grid electrode 302 may be provided, for example, in the surface conduction electron-emitting device 10.
It may be provided around 4 or in the vicinity thereof.

The external terminals D1 to Dm and G1 to Gn are connected to a drive circuit (not shown). Then, in synchronization with the sequential driving (scanning) of the element rows one column at a time, a modulation signal for one line of the image is applied to the columns of the grid electrode 302, so that each electron beam is applied to the fluorescent film 114. The irradiation can be controlled and the image can be displayed line by line.

As described above, the image forming apparatus of the present invention is
An image formation that can be obtained by using the electron source of the present invention in either a simple matrix arrangement or a trapezoidal arrangement and is suitable not only as a display device for the television broadcast described above but also as a display device for a video conference system, a computer, or the like. The device is obtained. Further, it can also be used as an exposure device of an optical printer constituted by a photosensitive drum and the like.

[0132]

EXAMPLES The present invention will be further described with reference to the following examples.

[Embodiment 1] This embodiment is based on FIG.
This is an example in which the shape of the thin film 21 is observed by performing the step shown in (b). The following steps a and b are shown in FIGS.
Corresponding to.

Step a: A quartz substrate is used as the substrate 1, which is thoroughly washed with an organic solvent, and then on the substrate 1 is formed a vacuum vapor deposition method with a thickness of 50 Å Ti and a thickness of 1000 Å N.
i were sequentially deposited. After that, patterning is performed by a photolithography technique, and an element electrode interval L is 3 μm and a width W
To form device electrodes 4 and 5 having a thickness of 300 μm.

Step b: Substrate 1 on which device electrodes 4 and 5 are formed
Organic palladium (Okuno Pharmaceutical Co., Ltd .; ccp-4)
230) After applying the containing solution by the airless spray method, the thin film 21 made of palladium oxide (PdO) fine particles (average particle size: 60Å) is formed by baking at 300 ° C. for 10 minutes in the atmosphere in a clean oven. did.

The shape of the thin film 21 produced as described above was observed by FE-SEM. As a result, it was found that the film was generally more uniform than a thin film formed by spinner coating of an organic palladium-containing solution as in the prior art. Was high.

Example 2 In this example, except that in step b of Example 1, the organopalladium-containing solution was applied by the electrostatic spray method instead of the airless spray method,
A thin film 21 was formed in the same manner as in Example 1.

When the shape of the thin film 21 produced as described above was observed with an FE-SEM, the same as in Example 1 was obtained.
The uniformity of the film was high overall. Further, the thin film 21 produced in this example had improved adhesion to the substrate 1 and the device electrodes 4 and 5.

[Embodiment 3] This embodiment is based on FIG.
This is an example in which the shape of the thin film 21 is observed by performing the step shown in (b). The following steps a and b are shown in FIGS.
Corresponding to.

Step a: A quartz substrate is used as the substrate 1. After thoroughly washing the substrate with an organic solvent, a pattern having a desired electrode-shaped opening is formed on the substrate 1 with a photoresist (RD).
-2000N-41, manufactured by Hitachi Chemical Co., Ltd.), and by vacuum deposition method, Ti with a thickness of 50Å and Ni with a thickness of 1000Å.
Were sequentially deposited. Then, by the lift-off method, the device electrodes 4, 5 having a device electrode interval L of 3 μm and a width W of 300 μm.
Was formed.

Process b: Substrate 1 on which device electrodes 4 and 5 are formed
Organic palladium (Okuno Pharmaceutical Co., Ltd .; ccp-4)
230) After the containing solution is applied by the electrostatic spray method, the same organopalladium containing solution is further applied thereon by the spinner method, and then, in a clean oven under air.
After firing at 00 ° C for 10 minutes, palladium oxide (Pd
O) A thin film 21 made of fine particles (average particle diameter: 60 Å) was formed.

When the shape of the thin film 21 produced as described above was observed by FE-SEM, the uniformity of the film as a whole was high. In addition, the thin film 21 produced in this example is
The adhesion to the substrate 1 and the device electrodes 4 and 5 was also high.

For comparison, in the step b, the coating of the organopalladium-containing solution was performed only by the spinner method or the electrostatic spray method.
Similarly, the thin film was observed. As a result, the thin film formed using only the spinner method was inferior in film uniformity and adhesion. Further, although the thin film formed only by the electrostatic spraying method had high adhesion, it seems that the burrs at the edges of the device electrodes 4 and 5 affect the area. There was

When a shape defect such as a burr is generated in the device electrode as in the present embodiment, it is not possible to combine the electrostatic spray method and the spinner method in the application of the organic metal-containing solution. It was revealed that it is effective for the uniformity and the adhesion.

Example 4 As the surface conduction electron-emitting device of this example, the surface conduction electron-emitting device shown in FIG. 1 was manufactured. FIG. 1A is a plan view of the surface conduction electron-emitting device, and FIG. 1B is a sectional view. In the figure, W represents the width of the device electrodes 4 and 5, L represents the distance between the device electrodes 4 and 5, and d represents the thickness of the device electrodes.

A method of manufacturing the surface conduction electron-emitting device of this embodiment will be described with reference to FIG. The following steps a to d correspond to (a) to (d) in FIG.

Step a: A quartz substrate is used as the substrate 1, which is thoroughly washed with an organic solvent, and then Pt is deposited on the substrate 1 by a vacuum vapor deposition method to have a device electrode interval L of 3 μm and a width W of 500 μm. Element electrodes 4 and 5 having a thickness d of 300 Å were formed.

Step b: Substrate 1 on which device electrodes 4 and 5 are formed
Organopalladium (Okuno Pharmaceutical Co., Ltd .; ccp
-4230) containing solution is applied by electrostatic spray method, and then air baking is performed in a clean oven at 300 ° C. for 10 minutes to obtain fine particles of palladium oxide (PdO) (average particle diameter:
A thin film 21 of 60Å) was formed. The film thickness of this thin film 21 was 0.02 μm, and the sheet resistance was 2 × 10 ⁴ Ω / □.

Step c: Region (200 to be the conductive thin film 3)
(μm × 300 μm) thin film 21 is masked with an OMR resist, and then excess PdO fine particles are removed by dry etching with Ar gas, and then the resist is removed with a UV / O ₃ asher to obtain a conductive film. The thin film 3 was used.

Step d: Next, the substrate 1 on which the element electrodes 4 and 5 and the conductive thin film 3 are formed is placed in the vacuum device 55 of the measurement and evaluation system of FIG. ,
The inside of the vacuum device 55 was set to a vacuum degree of about 10 ⁻⁶ Torr. After that, a voltage was applied between the device electrodes 4 and 5 by a power source 51 for applying the device voltage Vf, and a forming process was performed to form the electron emitting portion 2. The voltage waveform shown in FIG. 4A was used for the forming process.

In this embodiment, T1 in FIG. 4A is set to 1 m.
Seconds, T2 was set to 10 msec, the peak value (peak voltage during forming) was set to 5 V, and the forming treatment was performed for about 60 seconds.

The electron emission characteristics of the surface conduction electron-emitting device manufactured as described above were measured using the above-described measurement evaluation system.

The measurement conditions were that the distance H between the anode electrode 54 and the surface conduction electron-emitting device was 4 mm and the anode electrode 5 was 5 mm.
The potential of 4 is 1 kV, the vacuum device 55 at the time of measuring electron emission characteristics
The degree of vacuum inside was about 1 × 10 ^−6.5 Torr.

As a result, the element which has undergone the manufacturing process in this example has obtained the current-voltage characteristics as shown by the solid line in FIG. 6 even if it is manufactured several times, and the variations among the elements are small. . In the typical element of the present embodiment, the emission current Ie rapidly increases from the element voltage of about 8V, the element current If is 2.2mA and the emission current Ie is 1.1µA at the element voltage 14V.
And the electron emission efficiency η = Ie / If (%) is 0.05.
%Met.

[Embodiment 5] In this embodiment, an image forming apparatus as shown in FIG. 8 is used by using an electron source as shown in FIG. 7 in which a large number of surface conduction electron-emitting devices are arranged in a simple matrix. The produced example will be described.

A plan view of a part of the electron source is shown in FIG. 16 is a sectional view taken along the line AA ′ in the figure. However, the same reference numerals in FIG. 7, FIG. 8, FIG. 15 and FIG. 16 indicate the same members.

Here, 1 is a substrate, 102 is an X-direction wiring (also called lower wiring), 103 is a Y-direction wiring (also called upper wiring), 3 is a conductive thin film, 4 and 5 are element electrodes, and 401 is an interlayer. An insulating layer 402 is a contact hole for electrically connecting the device electrode 4 and the lower wiring 102.

First, a method for manufacturing an electron source will be specifically described in the order of steps with reference to FIG. The following steps a to
j corresponds to (a) to (j) in FIG.

Step a: Cr having a thickness of 50 Å and Au having a thickness of 6000 Å were sequentially laminated on the cleaned quartz substrate 1 by vacuum evaporation, and then a photoresist (made by AZ1370 Hoechst) was spin-coated by a spinner, followed by coating. -After
The photomask image was exposed and developed to form a resist pattern for the lower wiring 102, and the Au / Cr deposited film was wet-etched to form the lower wiring 102 having a desired shape.

Step b: Next, an interlayer insulating layer 401 made of a silicon oxide film having a thickness of 0.5 μm was deposited by the RF sputtering method.

Step c: A photoresist pattern for forming a contact hole 402 is formed on the silicon oxide film deposited in step b, and this is used as a mask to form the interlayer insulating layer 40.
1 was etched to form a contact hole 402. The etching is performed by RIE using CF ₄ and H ₂ gas (R
The active Ion Etching method was used.

Step d: After that, a pattern for forming the gap G between the device electrodes 4 and 5 and the device electrodes is formed by a photoresist (R).
D-2000N-41 (manufactured by Hitachi Chemical Co., Ltd.) and formed by vacuum vapor deposition to a thickness of 50Å Ti and a thickness of 1000ÅN.
i were sequentially deposited. The photoresist pattern was dissolved in an organic solvent and the Ni / Ti deposited film was lifted off to form device electrodes 4 and 5 having a device electrode interval L of 3 μm and a width W of 300 μm.

Process e: Upper wiring 10 on the device electrodes 4 and 5
After forming the photoresist pattern No. 3, Ti with a thickness of 50Å and Au with a thickness of 5000Å are sequentially deposited by vacuum evaporation, and unnecessary portions are removed by lift-off to form the upper wiring 103 of a desired shape. .

Step f: A pattern was formed such that a resist was applied to portions other than the contact hole 402, and Ti having a thickness of 50Å and Au having a thickness of 5000Å were sequentially deposited by vacuum evaporation. Contact holes 402 were buried by removing unnecessary portions by lift-off.

Step g: A thin film 21 made of PdO fine particles was formed on the entire surface of the substrate by the same method as in Example 4.

Step h: An OMR resist 403 was patterned on the thin film 21 in the region between the device electrode gaps.

Step i: Etching using Ar gas,
The PdO fine particles other than the region where the OMR resist 403 was formed were removed.

Process j: OM by UV / O ₃ ashing
The R resist 403 was peeled off to obtain a conductive thin film 3 made of a PdO fine particle film having a desired pattern.

Through the above steps, the lower wiring 10 is formed on the substrate 1.
2, interlayer insulating layer 401, upper wiring 103, device electrode 4,
5, the conductive thin film 3 and the like were formed.

In an electron source in which a large number of unformed surface conduction electron-emitting devices were simultaneously manufactured on the same substrate as described above, the variation in device resistance of each surface conduction electron-emitting device was observed. The variation was suppressed to one third or less as compared with the electron source manufactured by the manufacturing method.

Next, an image forming apparatus was manufactured using the above-mentioned unformed electron source. The manufacturing procedure is shown in FIGS.
Will be described below.

First, after fixing the substrate 1 of the unformed electron source to the rear plate 111, the face plate 116 (image forming member on the inner surface of the glass substrate 113 is located 5 mm above the substrate 1). The fluorescent film 114 and the metal back 115 are formed.) The support frame 112
Through the face plate 116, the support frame 11
2. Frit glass was applied to the joint portion of the rear plate 111, and baked at 400 [deg.] C. for 10 minutes in the air for sealing. Further, the frit glass was also used to fix the substrate 1 to the rear plate 111.

Fluorescent film 114 which is an image forming member
In the case of monochrome, it is composed of only the phosphor, but in this embodiment, the phosphor has a stripe shape (see FIG. 9A), and a black stripe is first formed with the black conductive material 121. Each color phosphor 12 is formed in the gap by the slurry method.
2 was applied to produce a fluorescent film 114. Black conductive material 12
As 1, a commonly used material containing graphite as a main component was used.

A metal back 115 is provided on the inner surface side of the fluorescent film 114. The metal back 115 is the fluorescent film 1.
After producing 14, the inner surface of the fluorescent film 114 is smoothed (usually called filming), and then A
1 was vacuum-deposited.

The face plate 116 may be provided with a transparent electrode on the outer surface side of the fluorescent film 114 in order to further increase the conductivity of the fluorescent film 114, but in this embodiment, only the metal back 115 is used. It was omitted because sufficient conductivity was obtained.

When performing the above-mentioned sealing, in the case of color, the phosphors 122 of the respective colors must correspond to the electron-emitting devices 104, so that sufficient alignment was performed.

The atmosphere in the envelope 118 completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dx1 to Dxm and Dy1 to Dy1 to Dy1. A voltage is applied between the device electrodes 4 and 5 of the electron-emitting device 104 through Dyn in the same manner as in Example 4 to perform the above-mentioned forming process, and the electron-emitting unit 2
Was formed.

After this, the envelope 1 is passed through an exhaust pipe (not shown).
The inside of 18 was evacuated to a degree of vacuum of about 10 ^-7 Torr, and the exhaust pipe was heated by a gas burner to be welded to seal the envelope 118. Finally, in order to maintain the degree of vacuum after sealing,
Getter processing was performed by a high frequency heating method. Getter is Ba
Was the main component.

In the display panel 201 (see FIG. 8) constructed by using the electron sources having the simple matrix arrangement as described above, the scanning signal and the modulation signal are not shown through the terminals Dx1 to Dxm and Dy1 to Dyn outside the container. Electrons are emitted by applying each to the electron-emitting devices 104 by the signal generating means, and a high voltage of several kV or more is applied to the metal back 115 through the high-voltage terminal Hv to accelerate the electron beam and collide with the fluorescent film 114. Then, an image was displayed by exciting and emitting light. As a result, the electron source manufactured in this example has a small variation between the characteristics of the surface conduction electron-emitting devices, so that a good display image was obtained.

[Embodiment 6] In this embodiment, an electron source as shown in FIG. 7 in which a large number of surface conduction electron-emitting devices are arranged in a simple matrix is used as shown in FIG. Another example of manufacturing such an image forming apparatus will be described.

In this embodiment, in order to form the pattern of the conductive thin film 3 (see FIG. 1) of the surface conduction electron-emitting device,
The point that a shielding member is used is greatly different from the fifth embodiment.

First, a method of manufacturing the electron source will be specifically described in the order of steps with reference to FIG. The following steps a to
g corresponds to (a) to (g) of FIG.

Step a: Cr having a thickness of 50 Å and 60 having a thickness of 60 by vacuum deposition on a substrate 1 in which a silicon oxide film having a thickness of 0.5 μm is formed on a cleaned soda-lime glass by a sputtering method.
After sequentially stacking 00Å Au, the photoresist (AZ1
370 Hoechst) is spin coated with a spinner,
After baking, the photomask image is exposed and developed to form a resist pattern of the lower wiring 102, and the Au / Cr deposited film is wet-etched to form the lower wiring 102 having a desired shape.
Was formed.

Step b: Next, an interlayer insulating layer 401 made of a silicon oxide film having a thickness of 1.0 μm was deposited by the RF sputtering method.

Step c: A photoresist pattern for forming a contact hole 402 is formed on the silicon oxide film deposited in step b, and the interlayer insulating layer 40 is formed using this as a mask.
1 was etched to form a contact hole 402. The etching is performed by RIE using CF ₄ and H ₂ gas (R
The active Ion Etching method was used.

Step d: After that, a pattern for forming the gap G between the device electrodes 4 and 5 and the device electrodes is formed by a photoresist (R).
D-2000N-41 (manufactured by Hitachi Chemical Co., Ltd.) and formed by vacuum vapor deposition to a thickness of 50Å Ti and a thickness of 1000ÅN.
i were sequentially deposited. The photoresist pattern was dissolved in an organic solvent and the Ni / Ti deposited film was lifted off to form device electrodes 4 and 5 having a device electrode interval L of 3 μm and a width W of 300 μm.

Process e: Upper wiring 10 on the device electrodes 4 and 5
After forming the photoresist pattern No. 3, Ti with a thickness of 50Å and Au with a thickness of 5000Å are sequentially deposited by vacuum evaporation, and unnecessary portions are removed by lift-off to form the upper wiring 103 of a desired shape. .

Step f: The shielding member 3 used for forming the pattern of the conductive thin film 3 relating to this step in FIG.
2 shows a part of the plan view of FIG. The shielding member 32 is a thin metal plate having a gap L1 between the device electrodes 4 and 5 and an opening 31 in the vicinity thereof.

FIG. 20 shows a detailed view of the step of forming the conductive thin film 3 at a desired position by using the above-mentioned shielding member 32. In the figure, 33 is a nozzle, and 34 is a mist of the organometallic solution sprayed from the nozzle.

The shielding member 32 was aligned on the substrate 1 on which the element electrodes and the like were formed, and placed and fixed on the substrate 1. Organic Pd (Okuno Pharmaceutical Co., Ltd., ccp-
A solution obtained by diluting 4230) with butyl acetate was sprayed from a nozzle 33 and applied. At this time, the nozzle 33 and the substrate 1 were relatively scanned so that the solution was uniformly applied. After that, the shielding member 32 was removed, and heating and baking treatment was performed at 300 ° C. for 10 minutes to obtain the conductive thin film 3 having a desired pattern.

The conductive thin film 3 made of fine particles containing Pd as a main element, formed as described above, has a film thickness of 100Å,
The sheet resistance value was 5 × 10 ⁴ Ω / □.

Step g: A pattern was formed such that a resist was applied to portions other than the contact hole 402 portion, and Ti having a thickness of 50Å and Au having a thickness of 5000Å were sequentially deposited by vacuum evaporation. Contact holes 402 were buried by removing unnecessary portions by lift-off.

Through the above steps, the lower wiring 10 is formed on the substrate 1.
2, interlayer insulating layer 401, upper wiring 103, device electrode 4,
5, the conductive thin film 3 and the like were formed to obtain the electron source of this example.

Using the unformed electron source obtained as described above, an image forming apparatus was prepared in the same manner as in Example 6 and an image was displayed. A good display image was obtained with little variation between the device characteristics.

In this embodiment, the manufacturing process of the electron source can be simplified as compared with the fifth embodiment.

[Embodiment 7] In step f described in Embodiment 6, when the organometallic solution is sprayed from the nozzle 34 of FIG. 20, the substrate 1 is grounded and the nozzle 34 portion is pulsed to a high voltage of −60 kV. An electron source was produced in exactly the same manner as in Example 6 except that voltage was applied. In addition, when the above pulse is ON,
It was turned off every 100 ms.

Using the unformed electron source obtained as described above, an image forming apparatus was prepared in the same manner as in Example 6 and an image was displayed. A good display image was obtained with little variation between the device characteristics. Further, even when images were displayed continuously for a long time, deterioration of the device characteristics of the surface conduction electron-emitting device was not observed, and stable image display could be continued.

[Embodiment 8] FIG. 21 shows a display panel (display panel) 201 of Embodiments 5 to 7 (see FIG. 8).
FIG. 3 is a diagram showing an example of an image display device of the present invention configured so that it can display image information provided from various image information sources such as television broadcasting.

In the figure, 201 is a display panel, 100
1 is a display panel drive circuit, 1002 is a display controller, 1003 is a multiplexer, 10
Reference numeral 04 is a decoder, 1005 is an input / output interface circuit, 1006 is a CPU, 1007 is an image generation circuit, 10
08, 1009 and 1010 are image memory interface circuits, 1011 are image input interface circuits,
Reference numerals 1012 and 1013 are TV signal receiving circuits and 1014 is an input unit.

When the display device receives a signal including both video information and audio information, such as a television signal, it naturally reproduces audio at the same time as displaying video. Descriptions of circuits, speakers, etc. relating to reception, separation, reproduction, processing, and storage of audio information that are not directly related to the features of the invention will be omitted.

Each section will be described below along the flow of the image signal.

First, the TV signal receiving circuit 1013 is a circuit for receiving a TV image signal transmitted using a wireless transmission system such as radio waves or spatial optical communication.

The TV signal system to be received is not particularly limited, and examples thereof include NTSC system, PAL system and SE.
Various methods such as a CAM method may be used. Further, a TV signal including a larger number of scanning lines than these, for example, a so-called high-definition TV such as the MUSE system is suitable for taking advantage of the display panel 201 suitable for a large area and a large number of pixels. It is a signal source.

T received by the TV signal receiving circuit 1013
The V signal is output to the decoder 1004.

The image TV signal receiving circuit 1012 is a circuit for receiving a TV image signal transmitted using a wired transmission system such as a coaxial cable or an optical fiber. Similar to the TV signal receiving circuit 1013, the system of the TV signal to be received is not particularly limited, and the TV signal received by this circuit is also output to the decoder 1004.

Image input interface circuit 1011
Is a circuit for capturing an image signal supplied from an image input device such as a TV camera or an image reading scanner, and the captured image signal is output to the decoder 1004.

Image memory interface circuit 1010
Is a circuit for capturing an image signal stored in a video tape recorder (hereinafter abbreviated as VTR), and the captured image signal is output to the decoder 1004.

Image memory interface circuit 1009
Is a circuit for capturing the image signal stored in the video disc.
It is output to 04.

Image memory-interface circuit 100
Reference numeral 8 denotes a circuit for capturing an image signal from a device that stores still image data, such as a so-called still image disc. The captured still image data is decoded by a decoder 1004.
Is output to

The input / output interface circuit 1005 is
It is a circuit for connecting the display device to an external computer, a computer network, or an output device such as a printer. It is of course possible to input / output image data and character / graphic information, and in some cases, input / output control signals and numerical data between the CPU 1006 of the display device and the outside.

The image generation circuit 1007 receives image data, character / graphic information, or CPU 1006 input from the outside via the input / output interface circuit 1005.
It is a circuit for generating display image data based on image data and character / graphic information output from the output. Inside this circuit, for example, a rewritable memory for accumulating image data and character / graphic information, a read-only memory that stores image patterns corresponding to character codes,
The circuits necessary for image generation, such as a processor for image processing, are incorporated.

The display image data generated by this circuit is output to the decoder 1004, but in some cases, it can be output to an external computer network or printer via the input / output interface circuit 1005.

The CPU 1006 mainly performs operations related to operation control of the display device and generation, selection and editing of a display image.

For example, a control signal is output to the multiplexer 1003 to appropriately select or combine image signals to be displayed on the display panel 201. At that time, a control signal is generated to the display panel controller 1002 according to the image signal to be displayed, and the screen display frequency, the scanning method (for example, interlaced or non-interlaced), the number of scanning lines in one screen, etc. are displayed. The operation of the device is controlled appropriately. In addition, image data and character / graphic information are directly output to the image generation circuit 1007,
Alternatively, the external computer or memory is accessed through the input / output interface circuit 1005 to input image data or character / graphic information.

It should be noted that the CPU 1006 may of course be involved in work for purposes other than this. For example, it may be directly related to a function of generating and processing information, such as a personal computer or a word processor. Alternatively, as described above, the computer may be connected to an external computer network via the input / output interface circuit 1005, and work such as numerical calculation may be performed in cooperation with an external device.

The input unit 1014 is used by the user to input commands, programs, data, etc. to the CPU 1006. For example, in addition to a keyboard and a mouse,
It is possible to use various input devices such as a joystick, a bar code reader, and a voice recognition device.

The decoder 1004 converts various image signals input from the above 1007 to 1013 into three primary color signals,
Alternatively, it is a circuit for inverse conversion into a luminance signal, an I signal, and a Q signal. In addition, as shown by a dotted line in FIG.
It is desirable that 004 has an image memory inside. This is to handle a television signal that requires an image memory for reverse conversion, such as the MUSE method.

The provision of the image memory makes it easy to display a still image. Alternatively, the image processing circuit 1007 and the CPU 1006 cooperate with each other to obtain an advantage of facilitating image processing and editing such as image thinning, interpolation, enlargement, reduction, and composition.

The multiplexer 1003 is the CPU 10
The display image is appropriately selected on the basis of the control signal input from 06. That is, the multiplexer 1003 selects a desired image signal from the inversely converted image signals input from the decoder 1004 and outputs it to the drive circuit 1001. In that case, by switching and selecting image signals within one screen display time, it is possible to divide one screen into a plurality of areas and display different images depending on the areas, as in a so-called multi-screen television. .

Display panel controller 1002
Is a circuit for controlling the operation of the drive circuit 1001 based on a control signal input from the CPU 1006.

As ones related to the basic operation of the display panel 201, for example, the display panel 201
A signal for controlling the operation sequence of the driving power source (not shown) is output to the driving circuit 1001. As a signal relating to the driving method of the display panel 201, for example, a signal for controlling a screen display frequency and a scanning method (for example, interlace or non-interlace) is output to the drive circuit 1001. In some cases, the drive circuit 10 outputs control signals relating to image quality adjustment such as brightness, contrast, color tone, and sharpness of a display image.
It may be output to 01.

The drive circuit 1001 is a circuit for generating a drive signal to be applied to the display panel 201, and based on the image signal input from the multiplexer 1003 and the control signal input from the display panel controller 1002. It works.

The function of each unit has been described above. With the configuration illustrated in FIG. 21, the display panel 2 displays image information input from various image information sources in this display device.
01 can be displayed. That is, various image signals such as television broadcasts are transmitted to the decoder 1004.
After being inversely converted in, the signal is appropriately selected in the multiplexer 1003 and input to the driving circuit 1001. On the other hand, the display controller 1002 generates a control signal for controlling the operation of the drive circuit 1001 according to the image signal to be displayed. The drive circuit 1001 applies a drive signal to the display panel 201 based on the image signal and the control signal. As a result, the image is displayed on the display panel 201. These series of operations are centrally controlled by the CPU 1006.

In the present image forming apparatus, the image memory built in the decoder 1004 and the image generation circuit 100.
7 and the CPU 1006 are involved not only to display one selected from a plurality of image information but also to enlarge, reduce, rotate, move, edge emphasize, thin out, and interpolate the displayed image information. It is also possible to perform image processing such as color conversion and aspect ratio conversion of images, and image editing such as combining, erasing, connecting, replacing, and fitting. Although not particularly mentioned in the description of the present embodiment, a dedicated circuit for performing processing and editing on audio information may be provided as in the above-mentioned image processing and image editing.

Therefore, the present image forming apparatus is a display device for television broadcasting, a terminal device for a video conference, an image editing device for handling still images and moving images, a computer terminal device, an office terminal device such as a word processor,
It is possible to combine the functions of a game console etc. with one unit,
It has an extremely wide range of applications for industrial or consumer use.

Note that FIG. 21 shows only an example of the configuration in the case of an image forming apparatus using a display panel having a surface conduction electron-emitting device as an electron beam source. It goes without saying that the present invention is not limited to this.

For example, among the constituent elements shown in FIG. 21, circuits relating to functions unnecessary for the purpose of use may be omitted.
On the contrary, the constituent elements may be added depending on the purpose of use. For example, when the image forming apparatus is applied as a videophone, it is preferable to add a television camera, a voice microphone, an illuminator, a transmission / reception circuit including a modem, and the like to the constituent elements.

In this image forming apparatus, since the display panel 201 according to the present invention can be easily thinned, the depth of the display apparatus can be reduced. In addition, since it is easy to make a large screen, has high brightness, and has excellent viewing angle characteristics, it is possible to display a highly realistic image with high power and good visibility.

[0229]

As described above, the manufacturing method of the present invention has the following effects.

1) It is possible to improve the uniformity of the conductive thin film 3 which is a film for electron emission of the surface conduction electron-emitting device,
When a large number of surface conduction electron-emitting devices are formed, it is possible to reduce variations among the device characteristics.

2) When the pattern of the conductive thin film 3 is formed, if the shielding member 32 having a desired opening is used, the manufacturing process can be greatly simplified. Particularly, it is effective when a large number of surface conduction electron-emitting devices are arranged to form the devices over a large area. In a large-screen image forming apparatus, the occurrence of image defects is prevented, and the manufacturing yield is greatly improved. Is possible.

3) When the electrostatic spray coating method is used to form the conductive thin film 3, the conductive thin film 3 and the substrate 1 and the electrodes have high adhesion, and the stability of the device is increased. Also,
The degree of freedom in device design is increased.

4) Various spray coating methods and spinner coating methods can be combined as the method for forming the conductive thin film 3. However, surface conduction electron emission is performed without using the spinner coating method including formation of electrodes and the like. An element, an electron source, and an image forming apparatus can be manufactured. Accordingly, when manufacturing an electron source in which a large number of surface conduction electron-emitting devices are arranged over a large area, it is not necessary to rotate a large-sized substrate at a high speed, and a simple device can be used safely and inexpensively. An electron source and an image forming apparatus using this electron source can be manufactured.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration example of a basic surface conduction electron-emitting device of the present invention.

FIG. 2 is a diagram for explaining an example of a method of manufacturing the surface conduction electron-emitting device of FIG.

FIG. 3 is a diagram for explaining the manufacturing method of the present invention using a shielding member.

FIG. 4 is an example of a voltage waveform used in forming processing.

FIG. 5 is a schematic diagram of a measurement evaluation system for measuring electron emission characteristics of a surface conduction electron-emitting device.

FIG. 6 is a diagram showing a typical example of the relationship between the emission current Ie and the device current If and the device voltage Vf of the surface conduction electron-emitting device of the present invention.

FIG. 7 is a schematic diagram of an electron source with a simple matrix arrangement.

FIG. 8 is a partially cutaway perspective view showing a schematic configuration of a display panel provided with an electron source having a simple matrix arrangement.

FIG. 9 is a diagram showing a configuration example of a fluorescent film used in a display panel.

FIG. 10 is a block diagram showing an example of a drive circuit of an image forming apparatus that displays an image in accordance with an NTSC television signal.

FIG. 11 is a schematic view of a ladder-type electron source.

FIG. 12 is a partial cutaway perspective view showing a schematic configuration of a display panel provided with a trapezoidal arrangement of electron sources.

FIG. 13 is a diagram for explaining the electrostatic spray coating method according to the present invention.

FIG. 14 is a cross-sectional view showing a state in which an organometallic thin film is formed on a device electrode having burrs by an electrostatic spray coating method.

FIG. 15 is a partial plan view of an electron source having a simple matrix arrangement shown in Examples 5 to 7.

16 is a partial cross-sectional view of the electron source of FIG.

FIG. 17 is a diagram for explaining a manufacturing process of the electron source of FIG. 15 shown in the fifth embodiment.

FIG. 18 is a drawing for explaining the manufacturing method for the electron source in FIG. 15 shown in the sixth embodiment.

FIG. 19 is a partial plan view of the shielding member used in the manufacturing process of the electron source shown in the sixth embodiment.

FIG. 20 is a diagram illustrating a sprayed state of the organometallic solution shown in Example 6.

FIG. 21 is a block diagram of the image forming apparatus shown in Embodiment 8.

FIG. 22 is a diagram illustrating a conventional method for manufacturing a surface conduction electron-emitting device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 Electron emission part 3 Conductive thin film 4,5 Element electrode 21 Thin film containing metal oxide 31 Opening 32 Shielding member 33 Nozzle 34 Fog of organic metal solution 50 For measuring device current If flowing through conductive thin film 3 Ammeter 51 Power supply for applying the device voltage Vf to the surface conduction electron-emitting device 52 Ammeter 53 for measuring the emission current Ie emitted from the electron-emitting portion 2 High voltage for applying a voltage to the anode electrode 54 Power supply 54 Anode electrode for trapping electrons emitted from the electron emission unit 55 Vacuum device 56 Exhaust pump 102 X-direction wiring 103 Y-direction wiring 104 Surface conduction electron-emitting device 105 Connection 111 Rear plate 112 Support frame 113 glass substrate 114 fluorescent film 115 metal back 116 face plate Hv high voltage terminal 118 envelope 121 Black Conductive Material 122 Phosphor 131 Nozzle 132 Generator 133 Tank 134 High Voltage DC Power Supply 135 Substrate Support 141 Organic Metal Thin Film 201 Display Panel 202 Scanning Circuit 203 Control Circuit 204 Shift Register 205 Line Memory 206 Synchronous Signal Separation Circuit 207 Modulation Signal Generator Va DC voltage source Vx DC voltage source 301 Display panel 302 Grid electrode 303 Electron passage opening 304 Common wiring for wiring the surface conduction electron-emitting device 104 401 Interlayer insulating layer 402 Contact hole 403 Resist 1001 Display panel 201 drive Circuit 1002 Display Controller 1003 Multiplexer 1004 Decoder 1005 Input / Output Interface Circuit 1006 CPU 1007 Image Generation Circuit 1 08,1009,1010 image memory interface circuit 1011 image input interface circuit 1012 and 1013 TV signal receiving circuit 1014 input unit 2201 metal oxide film 2202 resist 2203 photomask

Claims (31)

[Claims] 1. A method of manufacturing a surface conduction electron-emitting device, wherein an electron-emitting portion is provided on a conductive thin film that connects a pair of device electrodes. In the method of forming a conductive thin film, the conductive thin film is formed on a substrate. A method for manufacturing an electron-emitting device, comprising a step of spraying a solution containing a constituent element of a conductive thin film from a nozzle. 2. In the step of spraying a solution containing a constituent element of the conductive thin film from a nozzle, a shielding member having a pattern-shaped opening of the conductive thin film is arranged on the substrate. The method for manufacturing an electron-emitting device according to claim 1. 3. A step of spraying the solution from a nozzle,
The method for manufacturing an electron-emitting device according to claim 1, which is a spray coating step. 4. The step of spraying the solution from a nozzle comprises:
The method for manufacturing an electron-emitting device according to claim 1, which is a step of airless spray coating. 5. The step of spraying the solution from a nozzle comprises:
The method for manufacturing an electron-emitting device according to claim 1, which is a process of electrostatic spray coating. 6. The step of spraying the solution from a nozzle comprises:
The method of manufacturing an electron-emitting device according to claim 1, wherein the steps are electrostatic spray coating and airless spray coating. 7. The method of manufacturing an electron-emitting device according to claim 1, wherein the step of spraying the solution from a nozzle is an electrostatic spray coating step, and the step of applying a spinner coating of the solution is performed after the step. . 8. The method for manufacturing an electron-emitting device according to claim 1, wherein the solution is an organic palladium solution. 9. An electron-emitting device obtained by the manufacturing method according to claim 1. 10. A surface conduction electron-emitting device having an electron-emitting portion on a conductive thin film that connects a pair of device electrodes,
In the method of manufacturing a plurality of electron sources provided on a substrate, the step of forming the conductive thin films of the plurality of electron-emitting devices includes the step of spraying a solution containing the constituent elements of the conductive thin films on the substrate from a nozzle. A method of manufacturing an electron source, which comprises: 11. A step of spraying a solution containing a constituent element of the conductive thin film from a nozzle, wherein a shielding member having a pattern-shaped opening of the conductive thin film is arranged on the substrate. The method for manufacturing an electron source according to claim 10. 12. The method of manufacturing an electron source according to claim 10, wherein the step of spraying the solution from a nozzle is a spray coating step. 13. The method of manufacturing an electron source according to claim 10, wherein the step of spraying the solution from a nozzle is an airless spray coating step. 14. The step of spraying the solution from a nozzle is a step of electrostatic spray coating.
The method for manufacturing an electron source according to. 15. The method of manufacturing an electron source according to claim 10, wherein the step of spraying the solution from a nozzle is a step of electrostatic spray coating and airless spray coating. 16. The method for producing an electron source according to claim 10, wherein the step of spraying the solution from a nozzle is an electrostatic spray coating step, and the step has a spinner coating step of the solution after the step. 17. The method of manufacturing an electron source according to claim 10, wherein the solution is an organic palladium solution. 18. The electron source has at least one device row in which a plurality of electron-emitting devices are arranged, and wirings for driving each electron-emitting device are arranged in a matrix. Item 18. A method for manufacturing an electron source according to any one of Items 10 to 17. 19. The electron source has at least one device row in which a plurality of electron-emitting devices are arranged, and wirings for driving each electron-emitting device are arranged in a ladder shape. A method for manufacturing an electron source according to claim 10. 20. An electron source obtained by the manufacturing method according to claim 10. 21. An electron source having a plurality of surface conduction electron-emitting devices, each of which has an electron-emitting portion provided on a conductive thin film that connects a pair of device electrodes, on a substrate, and an electron beam emitted from the electron source. In the method of manufacturing an image forming apparatus having an image forming member that forms an image by irradiation, the step of forming a conductive thin film of the plurality of electron-emitting devices includes forming a solution containing a constituent element of the conductive thin film on a substrate. A method for manufacturing an image forming apparatus, comprising a step of spraying from a nozzle. 22. In the step of spraying a solution containing a constituent element of the conductive thin film from a nozzle, a shielding member having a pattern-shaped opening of the conductive thin film is arranged on the substrate. The method for manufacturing an image forming apparatus according to claim 22. 23. The method of manufacturing an image forming apparatus according to claim 21, wherein the step of spraying the solution from a nozzle is a spray coating step. 24. The method of manufacturing an image forming apparatus according to claim 21, wherein the step of spraying the solution from a nozzle is an airless spray coating step. 25. The process of spraying the solution from a nozzle is a process of electrostatic spray coating.
A method for manufacturing an image forming apparatus according to item 1. 26. The method of manufacturing an image forming apparatus according to claim 21, wherein the step of spraying the solution from a nozzle is a step of electrostatic spray coating and airless spray coating. 27. The method of manufacturing an image forming apparatus according to claim 21, wherein the step of spraying the solution from a nozzle is an electrostatic spray coating step, and the step has a spinner coating step of the solution after the step. . 28. The method of manufacturing an image forming apparatus according to claim 21, wherein the solution is an organic palladium solution. 29. The electron source has at least one device row in which a plurality of electron-emitting devices are arranged, and wirings for driving each electron-emitting device are arranged in a matrix. Item 29. A method for manufacturing an image forming apparatus according to any one of Items 21 to 28. 30. The electron source has at least one device row in which a plurality of electron-emitting devices are arranged, and wirings for driving each electron-emitting device are arranged in a ladder shape. A method for manufacturing an image forming apparatus according to claim 21. 31. An image forming apparatus obtained by the manufacturing method according to claim 21.