JPH0816651B2 - Double-sided foreign matter detection method and device - Google Patents
Double-sided foreign matter detection method and deviceInfo
- Publication number
- JPH0816651B2 JPH0816651B2 JP3096770A JP9677091A JPH0816651B2 JP H0816651 B2 JPH0816651 B2 JP H0816651B2 JP 3096770 A JP3096770 A JP 3096770A JP 9677091 A JP9677091 A JP 9677091A JP H0816651 B2 JPH0816651 B2 JP H0816651B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- foreign matter
- optical system
- transparent substrate
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
【0001】
【発明の対象分野】本発明は、表面に回路パターンを形
成した透明基板の表面及び裏面の各々に付着した微小異
物を区別して検出する両面異物検出方法及びその装置に
関するものである。
【0002】
【従来技術】従来の異物検査装置は図1に示すように構
成されていた。即ち、ウエハ1上に存在する異物2に対
して2方向斜め上方よりS偏光レーザ発振器3、4より
出射されたS偏光レーザ光5、6が照射され、異物2か
らはS+P偏光レーザ光7が反射される。このS+P偏
光レーザ光7を対物レンズ8で集光した後、S偏光カッ
トフィルタ9でS偏光レーザのみを遮断し、P偏光レー
ザ光10のみを視野限定用の絞り11を介して光電変換
素子12により検出する。回路パターン断差からはS偏
光レーザ光のみが反射される。従って、上記光電変換素
子12の出力により異物の存在を知ることが出来る。こ
の従来の異物検査装置は、あくまでもウエハ上に存在す
る異物を検出しようとするものである。
【0003】また、従来技術として、特開昭57−12
8834号公報が知られている。
【0004】
【発明が解決しようとする課題】しかしながら、上記従
来技術には、ひっくり返さないで、実際に投影露光する
状態と同じである回路パターンを形成した表面を下向き
にした状態で、透明基板の表面及び裏面の各々に付着し
た微小異物を区別して検出しようとする課題については
考慮されていなかった。
【0005】本発明の目的は上記従来技術の課題を解決
するべく、実際に投影露光する状態と同じである回路パ
ターンを形成した表面を下向きにした状態で、表面に回
路パターンを有する透明基板の表面及び裏面の両面に付
着した微小異物を区別して検査できるようにして、微小
異物を確実に検査して透明基板に付着した微小異物に基
づく不良露光をなくし、半導体生産の大きな歩留まり向
上に寄与できるようにした両面異物検出方法及びその装
置を提供するにある。
【0006】
【課題を解決するための手段】本発明は、上記目的を達
成するために、表面に回路パターンを形成した透明基板
(レチクル)の表面及び裏面の各々に、直線偏光レーザ
照明光を表面用照明集光光学系及び裏面用照明集光光学
系により透明基板面の垂直方向から67.5±15度傾
斜させて直線状に走査して集光スポット照明し、前記透
明基板を前記直線状走査方向に対してほぼ直角方向に走
査し、表面上及び裏面上の各々からの散乱光を、透明基
板面の垂直方向から67.5±15度傾斜させ、且つほ
ぼ前記直線状走査方向から表面用検出集光光学系及び裏
面用検出集光光学系の各々で集光すると共に該表面用検
出集光光学系及び裏面用検出集光光学系の各々に備えら
れた遮光手段で前記回路パターンのエッジから反射する
散乱光を遮光し、各遮光手段を通して集光された光の各
々を表面用光電変換手段及び裏面用光電変換手段の各々
で受光し、該表面用光電変換手段から検出される信号と
裏面用光電変換手段から検出される信号に基づいて前記
回路パターンを形成した透明基板の表面上に付着した異
物と前記透明基板の裏面上に付着した異物とを区別して
検出することを特徴とする両面異物検出方法である。ま
た本発明は、表面に回路パターンを形成した透明基板
(レチクル)の表面及び裏面の各々に、直線偏光レーザ
照明光を透明基板面の垂直方向から67.5±15度傾
斜させて集光スポット照明する表面用照明集光光学系及
び裏面用照明集光光学系と、前記透明基板を前記直線状
走査方向に対してほぼ直角方向に走査する走査手段と、
表面上及び裏面上の各々からの散乱光を、透明基板面の
垂直方向から67.5±15度傾斜させ、且つほぼ前記
直線状走査方向から集光し、前記回路パターンのエッジ
から反射する散乱光を遮光する遮光手段を有する表面用
検出集光光学系及び裏面用検出集光光学系と、前記各遮
光手段を通して前記表面用検出集光光学系及び裏面用検
出集光光学系の各々で集光された光の各々を受光する表
面用光電変換手段及び裏面用光電変換手段とを備え、該
表面用光電変換手段から検出される信号と裏面用光電変
換手段から検出される信号に基づいて前記回路パターン
を形成した透明基板の表面上に付着した異物と前記透明
基板の裏面上に付着した異物とを区別して検出するよう
に構成したことを特徴とする両面異物検出装置である。
【0007】
【作用】縮小投影式自動マスクアライナ等の露光装置に
おいて、レチクルやフォトマスク等に形成された回路パ
ターンを、半導体ウエハ上にステップアンドレピートし
て転写する際、レチクルパターンやフォトマスク等に異
物が存在するとその像(影)が回路パターンと一緒にウ
エハ上に転写され、出来上がったウエハ上の単一露光部
(チップ)全てが不良となる。そこで、レチクルやフォ
トマスク等において、ひっくり返さないで(異物付着状
態を変えることなく)、実際に投影露光する状態と同じ
である回路パターンを形成した表面を下向きにした状態
で、両面に付着した異物を区別して検査する必要があ
る。それは、回路パターン面に存在する異物は、微小異
物でも露光に影響を及ぼすと共に、異物が回路パターン
面に存在するか裏面に存在するかで異物除去条件も変わ
ることが考えられる。また、回路パターン上に存在する
異物も移動する可能があり、移動した際、露光に支障を
及ぼすことになり、回路パターン上に存在する異物も検
出することが必要となる。
【0008】従って、上記本発明の構成により、レチク
ルやフォトマスク等において、ひっくり返さないで(異
物付着状態を変えることなく)、実際に投影露光する状
態と同じである回路パターンを形成した表面を下向きに
した状態で、両面に付着した異物を区別して高信頼度で
検査することが可能となり、透明基板に付着した微小異
物に基づく不良露光をなくし、半導体生産の大きな歩留
まり向上に寄与できる。
【0009】
【実施例】以下本発明を図に示す実施例にもとづいて具
体的に説明する。図2は本発明に係るペリクル体をフォ
トマスクやレチクル等の基板に装着した場合の基板上の
異物を検出する装置の一実施例を示す図である。即ちレ
ーザ発振器27から出たレーザ光30は偏光素子29に
よってある特定方向の直線偏光波(水平波)となり、回
転または揺動するモータ34に連結されたガルバノミラ
ー28で全反射し、レンズ31を経てミラー32に達す
る。その後ミラー35a,36aあるいは35b,36
bを経て基板21の表面上に斜方向より傾斜角α=7.
5°〜37.5°で入射する。ガルバノミラー28は回
転速度を一定に振動し、レンズ31はガルバノミラー2
8の回転角に比例して基板21の表面上のレーザスポッ
ト80を直線的に走査することができるf・θレンズ
(照明集光光学系)である。
【0010】図4に示す基板21の表面上に存在する異
物24からの反射光25を検出するため、レーザ光30
a,30bとほぼ直角(90°±10°)にしかも基板
21の水平面に対し傾斜角β=7.5°〜37.5°の
斜上方にS偏光シャットフィルタ等の検光子41a,4
1b、集光レンズ(検出集光光学系)40a,40b、
スリット状遮光装置(視野限定手段)39a,39b、
光電変換素子(光電変換手段)38a,38bから成る
検出装置37a,37bをレチクルの基板21y方向中
心の対称位置にそれぞれ設置してある。検光子41a,
41bは異物24からの反射光25の特定方向の直線偏
光波を抽出するものである。抽出された検光子通過光は
集光レンズ40a,40bによりスリット状遮光装置3
9a,39bを経て光電変換素子38a,38b上に達
する。高感度を有する光電子倍増管等の光電変換素子3
8a,38bは受光強度に比例した電気信号を発生す
る。
【0011】図2で1対の照明装置35a,36a,及
び35b,36bと検出装置37a,37bを設けたの
は以下の理由による。
【0012】図5,図6は、レーザ光30の照射方向と
異物24の反射光25の検出方向を示す図である。ペリ
クルの枠22でレーザ光30a,30bや異物24の反
射光25が遮断されるのを防止する手段として第5図の
如く基板21を半分に分けて、常に検査領域の反対側か
らレーザ光30a,30bを照射し、同時に異物24の
反射光25も異物24の存在領域の反対側より検出する
ようにしてある。すなわち、図6の如く基板21の検査
領域を4個に分割して示すならば、レーザ光30aは領
域AとCを検査する場合に照射し、レーザ光30bは領
域B,Dを検査する場合に照射する。この場合レーザ光
30a,30bの切換えはミラー32(図2)をモータ
33で90度回転させることにより行う。検出装置37
aはレーザスポット80が基板21の面上のAないしB
の領域にある時作動させ、検出装置37bはレーザスポ
ット80が基板21の面上のCないしDの領域に存在す
る時に作動させる。即ち、ガルバノミラー28の回転角
に同期して光電子倍増管等の光電変換素子38aまたは
38bの検出信号を電気回路によって導通,非導通(オ
ン・オフ)させることになる。また、基板21の中心寄
りに異物24が存在する場合と端に異物24が存在する
場合とでは、異物からの反射光25の検出感度が変化す
るため本装置では異物検出のための電気的な閾値(スラ
イスレベル)を基板21面上のレーザスポット80の位
置に同期して変化するようにしてある。
【0013】図7に検出回路の概略を示す。光電変換素
子38aまたは38bのアナログ信号は電圧増幅器42
a,42bを経てマルチプレクサ43に入力する。マル
チプレクサ43は、ガルバノミラー駆動装置44から出
る回転角に比例した図8(a)に示す駆動信号50に同
期して、図8(b)に示すゲート信号51を形成し、光
電変換素子38a,または38bのいずれかの信号のみ
を通す。図8(d)に示すアナログ信号52は、閾値回
路(コンパレータ)47により、ガルバノミラー駆動回
路44から出る電気信号と同期して電圧を可変する閾値
発生回路46で発生する図8(c)に示す可変閾値信号
53と比較され、図8(e)に示す信号54が得られ
る。この場合、検出信号52が閾値53を越えた場合に
A/D変換器49により検出信号52のピーク値を、ガ
ルバノミラー駆動装置44から得られるy座標電気信号
50とテーブル駆動装置45のx座標検出センサから得
られるx座標電気信号とに基いて定まる基板21上の
(x,y)座標位置に対応させて記憶装置48に記憶す
るので、異物の(x,y)存在位置が把握でき、顕微鏡
等によって異物検出後に異物の寸法・形状の観察が可能
である。
【0014】以上述べた説明は基板21の上表面異物検
出装置85によるものであるが、基板21の下表面の異
物を検出する際には、図9に示す如く基板21の下表面
異物検出装置90を基板21の下面に更に1組設置する
ことにより可能である。この場合、装置の構成および電
気回路の構成は全く同様なもので良い。
【0015】1/10縮小投影式マスクアライナ用のレ
チクルでは、レチクル上面の異物10〜20μm以上、
下面パターン面上の異物2〜5μm以上を検出する必要
があるため、上表面・下表面異物検出装置85,90の
閾値を上記異物検出レベルに設定する必要がある。
【0016】又、以上の説明はレチクル異物検査単体と
しているが、本装置をマスクアライナに装着することに
より、マスクアライナへのレチクル装着後の付着異物を
も、検査することが可能となる。
【0017】以上説明したように本発明では、基板面上
に装着された107mm□のペリクルの枠22(厚さ2
mm,高さ4mm,又は6.3mm)の影響をさけるた
めに、図10に示す如くペリクルの枠の影響を受けず
に、基板面上を照射できる位置(α=22.5°±15
°)に照射装置(27,29)を設け、これと直角(9
0度±10度)に基板の斜上方(β=22.5°±15
°)に検出装置37を設けて、基板21上の異物を検出
することにある。しかし本発明では照射光30を基板2
1に対し斜方向より照射するため、図4に示す如くペリ
クル膜体の枠22の上面からの反射光26a,レチクル
パターン面21aからの反射光26b,ペリクル膜23
上の異物58からの反射光26cを基板21面上の異物
として誤検出してしまう。ここでペリクル膜23上に存
在する異物58は、基板21より離れているので、投影
露光する際焦点ボケとなり、露光不良を発生することは
ない。
【0018】そこで本発明は、図10に示すピンホール
状遮光装置57および図11に示すスリット状遮光装置
39を検出装置に付加したことによって誤検出への対処
を行った。図10に示すピンホール状遮光装置57を付
加した検出装置を用いて基板面上の異物を検出する場合
は基板21をxおよびy方向に移動または回転しながら
一方向に移動するテーブル(図示せず)上に載置して2
次元的に操作する必要がある。また、図11に示すスリ
ット状遮光装置39を付加した検出装置を用いて基板2
1の面上の異物24を検出する場合は、照明光を走査手
順(ガルバノミラー28とf・θレンズ31等から構成
される。)で一方向(y方向)に走査して基板21をx
方向テーブル(図示せず)に載置して照明光の走査と直
交する方向(x方向)に移動することにより基板全面上
の異物検出が可能である。以上述べた図10及び図11
に示すピンホール,スリット状遮光装置を本発明に採用
したことにより、図12に示すようなペリクルの枠22
などの反射光の影響を受けずに、基板面上の異物検出が
高感度に行える。又、照明光に偏光(例えばS偏光)を
行い、検出装置に検光子(例えばS偏光シャットフィル
タ)41を付加することにより、従来技術に比べている
如く異物と回路パターンの断差部との間の散乱反射光の
偏光角度特性の違いを利用して更に微小異物の感度向上
をはかることができる。
【0019】また、上記実施例において傾斜角α,βは
小さい程、偏光角度変化が有効に検出出来るので、検出
感度が向上するが、ペリクルの枠等の影響からα,β共
に角度22.5±15度が最適である。更に検出装置3
7a,37bの光軸(スリットの中心)を図6のイ,ロ
の点(レチクル移動時には線x1x2)に向けると、検出
感度の均一性を向上させることができる。
【0020】
【発明の効果】以上説明したように、本発明によれば、
レチクルやフォトマスク等において、ひっくり返さない
で(異物付着状態を変えることなく)、実際に投影露光
する状態と同じである回路パターンを形成した表面を下
向きにした状態で、両面に付着した異物を区別して高信
頼度で検査することが可能となり、透明基板に付着した
微小異物に基づく不良露光をなくし、半導体生産の大き
な歩留まり向上に寄与できる効果を奏する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a double-sided foreign matter detecting method for discriminatingly detecting minute foreign matter attached to each of the front surface and the back surface of a transparent substrate having a circuit pattern formed on the front surface thereof. It relates to the device. 2. Description of the Related Art A conventional foreign matter inspection apparatus is constructed as shown in FIG. That is, the foreign matter 2 existing on the wafer 1 is irradiated with the S-polarized laser light 5 and 6 emitted from the S-polarized laser oscillators 3 and 4 obliquely from above in two directions, and the foreign matter 2 emits the S + P polarized laser light 7 from the foreign matter 2. Is reflected. After this S + P-polarized laser light 7 is condensed by the objective lens 8, only the S-polarized laser light is blocked by the S-polarization cut filter 9, and only the P-polarized laser light 10 is passed through the field-selecting diaphragm 11 to the photoelectric conversion element 12. To detect. Only S-polarized laser light is reflected from the circuit pattern difference. Therefore, the presence of foreign matter can be known from the output of the photoelectric conversion element 12. This conventional foreign matter inspection apparatus is intended to detect foreign matter existing on a wafer. Further, as a conventional technique, Japanese Patent Laid-Open No. 57-12 is used.
No. 8834 is known. However, the prior art described above does not turn over and the surface of the transparent substrate on which the circuit pattern is formed, which is the same as the state of actual projection exposure, faces downward. No consideration was given to the problem of trying to detect minute foreign matter attached to each of the front surface and the back surface separately. In order to solve the above-mentioned problems of the prior art, the object of the present invention is to provide a transparent substrate having a circuit pattern on its surface with the surface on which the circuit pattern is formed facing downward, which is the same as the actual state of projection exposure. By making it possible to inspect minute foreign substances adhered to both the front surface and the back surface separately, it is possible to reliably inspect the minute foreign substances, eliminate defective exposure due to the minute foreign substances adhered to the transparent substrate, and contribute to a large improvement in semiconductor production yield. The present invention provides a double-sided foreign matter detecting method and apparatus therefor. In order to achieve the above object, the present invention provides linearly polarized laser illumination light to each of the front and back surfaces of a transparent substrate (reticle) having a circuit pattern formed on the front surface. The front surface illumination condensing optical system and the back surface illumination condensing optical system are slanted by 67.5 ± 15 degrees from the vertical direction of the transparent substrate surface to perform linear scanning to perform condensing spot illumination and the transparent substrate to the straight line. Scanning in a direction substantially perpendicular to the horizontal scanning direction, the scattered light from each of the front surface and the back surface is tilted by 67.5 ± 15 degrees from the direction perpendicular to the transparent substrate surface, and substantially from the linear scanning direction. The circuit pattern is collected by the front-side detection light-collecting optical system and the back-side detection light-collecting optical system, and the light-shielding means provided in each of the front-side detection light-collecting optical system and the back-side detection light-collecting optical system. Scattering from the edges of And each of the light condensed through each light shielding means is received by each of the front surface photoelectric conversion means and the back surface photoelectric conversion means, and the signal detected from the front surface photoelectric conversion means and the back surface photoelectric conversion means. According to the double-sided foreign matter detection method, the foreign matter adhered on the front surface of the transparent substrate on which the circuit pattern is formed and the foreign matter adhered on the rear surface of the transparent substrate are distinguished and detected based on a signal detected from is there. Further, according to the present invention, a linearly polarized laser illumination light is tilted 67.5 ± 15 degrees from the direction perpendicular to the transparent substrate surface on each of the front surface and the back surface of a transparent substrate (reticle) having a circuit pattern formed on the surface to form a focused spot. A front surface illumination condensing optical system and a back surface illumination condensing optical system, and scanning means for scanning the transparent substrate in a direction substantially perpendicular to the linear scanning direction,
Scattering light scattered from each of the front surface and the back surface is inclined by 67.5 ± 15 degrees from the vertical direction of the transparent substrate surface, is condensed from substantially the linear scanning direction, and is reflected from the edge of the circuit pattern. The front-side detection light collection optical system and the back-side detection light collection optical system having a light-shielding means for shielding light, and the front-side detection light collection optical system and the back-side detection light collection optical system through the respective light-shielding means. A photoelectric conversion means for the front surface and a photoelectric conversion means for the back surface, which receive each of the emitted light, and based on a signal detected from the photoelectric conversion means for the front surface and a signal detected from the photoelectric conversion means for the back surface, A double-sided foreign matter detection device, characterized in that it is configured to detect a foreign matter attached on a front surface of a transparent substrate on which a circuit pattern is formed and a foreign matter attached on a rear surface of the transparent substrate, separately. In an exposure apparatus such as a reduction projection type automatic mask aligner, when a circuit pattern formed on a reticle, a photomask or the like is transferred by step-and-repeat onto a semiconductor wafer, the reticle pattern, the photomask or the like is transferred. If there is a foreign substance on the wafer, the image (shadow) of the foreign substance is transferred onto the wafer together with the circuit pattern, and all the single exposure portions (chips) on the finished wafer become defective. Therefore, in a reticle, photomask, etc., without turning over (without changing the foreign matter adhesion state), the state in which the circuit pattern formed that is the same as the state in which actual projection exposure is performed is facing down, and the foreign matter attached on both sides It is necessary to distinguish and inspect. It is conceivable that the foreign matter existing on the circuit pattern surface affects the exposure even if it is a minute foreign matter, and the foreign matter removing condition is changed depending on whether the foreign matter exists on the circuit pattern surface or on the back surface. Further, foreign matters existing on the circuit pattern may also move, and when the foreign matter moves, it may interfere with the exposure, and it is necessary to detect the foreign matters existing on the circuit pattern. Therefore, according to the above-described structure of the present invention, in the reticle, the photomask, or the like, the surface on which the circuit pattern is formed, which is the same as the actual projection exposure state, is turned down without turning over (without changing the foreign matter adhesion state). In this state, it is possible to inspect the foreign matters attached to both sides with high reliability, eliminate defective exposure due to minute foreign matters attached to the transparent substrate, and contribute to a large improvement in semiconductor production yield. The present invention will be specifically described below based on the embodiments shown in the drawings. FIG. 2 is a diagram showing an embodiment of an apparatus for detecting foreign matter on a substrate when the pellicle body according to the present invention is mounted on a substrate such as a photomask or a reticle. That is, the laser light 30 emitted from the laser oscillator 27 becomes a linearly polarized wave (horizontal wave) in a specific direction by the polarization element 29, and is totally reflected by the galvano mirror 28 connected to the rotating or oscillating motor 34, and the lens 31 is reflected. After that, it reaches the mirror 32. After that, the mirrors 35a, 36a or 35b, 36
tilt angle α = 7. from the oblique direction on the surface of the substrate 21 via b.
It is incident at 5 ° to 37.5 °. The galvanometer mirror 28 oscillates at a constant rotational speed, and the lens 31 moves to the galvanometer mirror 2.
This is an f.theta. Lens (illumination condensing optical system) capable of linearly scanning the laser spot 80 on the surface of the substrate 21 in proportion to the rotation angle of 8. Laser light 30 is used to detect the reflected light 25 from the foreign matter 24 existing on the surface of the substrate 21 shown in FIG.
The analyzers 41a, 4 such as an S-polarization shut filter are arranged at a right angle (90 ° ± 10 °) to a and 30b and obliquely above the horizontal plane of the substrate 21 with an inclination angle β = 7.5 ° to 37.5 °.
1b, condenser lenses (detection condenser optical system) 40a, 40b,
Slit-shaped light-shielding devices (field-of-view limiting means) 39a, 39b,
Detection devices 37a and 37b, which are composed of photoelectric conversion elements (photoelectric conversion means) 38a and 38b, are installed at symmetrical positions about the center of the reticle in the direction of the substrate 21y. Analyzer 41a,
Reference numeral 41b is for extracting a linearly polarized wave of the reflected light 25 from the foreign matter 24 in a specific direction. The extracted light passing through the analyzer is condensed by the condenser lenses 40a and 40b into the slit-shaped light shielding device 3
The photoelectric conversion elements 38a and 38b are reached via 9a and 39b. Photoelectric conversion element 3 such as a photomultiplier tube having high sensitivity
8a and 38b generate electric signals proportional to the received light intensity. The pair of illumination devices 35a, 36a and 35b, 36b and the detection devices 37a, 37b are provided in FIG. 2 for the following reason. FIGS. 5 and 6 are views showing the irradiation direction of the laser light 30 and the detection direction of the reflected light 25 of the foreign matter 24. As a means for preventing the laser beams 30a and 30b and the reflected beam 25 of the foreign matter 24 from being blocked by the frame 22 of the pellicle, the substrate 21 is divided in half as shown in FIG. 5, and the laser beam 30a is always provided from the opposite side of the inspection area. , 30b, and at the same time, the reflected light 25 of the foreign matter 24 is also detected from the side opposite to the area where the foreign matter 24 exists. That is, if the inspection area of the substrate 21 is divided into four areas as shown in FIG. 6, the laser beam 30a is irradiated when inspecting the areas A and C, and the laser beam 30b is irradiated when inspecting the areas B and D. To irradiate. In this case, switching between the laser beams 30a and 30b is performed by rotating the mirror 32 (FIG. 2) by 90 degrees with the motor 33. Detection device 37
a indicates that the laser spot 80 is A or B on the surface of the substrate 21.
, And the detector 37b is activated when the laser spot 80 is in the area C to D on the surface of the substrate 21. That is, in synchronization with the rotation angle of the galvano mirror 28, the detection signal of the photoelectric conversion element 38a or 38b such as a photomultiplier tube is turned on / off by an electric circuit. Further, since the detection sensitivity of the reflected light 25 from the foreign matter changes depending on whether the foreign matter 24 is present near the center of the substrate 21 or when the foreign matter 24 is present at the end, the present apparatus has an electrical function for foreign matter detection. The threshold value (slice level) is changed in synchronization with the position of the laser spot 80 on the surface of the substrate 21. FIG. 7 shows an outline of the detection circuit. The analog signal of the photoelectric conversion element 38a or 38b is a voltage amplifier 42.
It is input to the multiplexer 43 via a and 42b. The multiplexer 43 forms the gate signal 51 shown in FIG. 8B in synchronism with the drive signal 50 shown in FIG. 8A, which is proportional to the rotation angle output from the galvano-mirror drive device 44, and the photoelectric conversion element 38a, Alternatively, only the signal of 38b is passed. The analog signal 52 shown in FIG. 8D is generated by the threshold value circuit (comparator) 47 in the threshold value generation circuit 46 that varies the voltage in synchronization with the electric signal output from the galvano-mirror drive circuit 44. The signal 54 shown in FIG. 8E is obtained by comparison with the variable threshold signal 53 shown. In this case, when the detection signal 52 exceeds the threshold value 53, the peak value of the detection signal 52 is calculated by the A / D converter 49 as the y coordinate electric signal 50 obtained from the galvanometer mirror driving device 44 and the x coordinate of the table driving device 45. Since the (x, y) coordinate position on the substrate 21 determined based on the x-coordinate electric signal obtained from the detection sensor is stored in the storage device 48, the (x, y) existence position of the foreign matter can be grasped. It is possible to observe the size and shape of a foreign substance after detecting the foreign substance with a microscope or the like. Although the above description is based on the upper surface foreign matter detection device 85 of the substrate 21, when detecting the foreign matter on the lower surface of the substrate 21, the lower surface foreign matter detection device of the substrate 21 is shown in FIG. It is possible to install one set of 90 on the lower surface of the substrate 21. In this case, the configuration of the device and the configuration of the electric circuit may be exactly the same. In the reticle for the 1/10 reduction projection type mask aligner, foreign matter on the upper surface of the reticle is 10 to 20 μm or more,
Since it is necessary to detect foreign matter of 2 to 5 μm or more on the lower surface pattern surface, it is necessary to set the thresholds of the upper surface / lower surface foreign matter detection devices 85 and 90 to the above foreign matter detection level. In the above description, the reticle foreign matter inspection is used as a single unit. However, by mounting the apparatus on the mask aligner, it is possible to inspect the foreign matter attached to the mask aligner after the reticle is mounted. As described above, according to the present invention, the frame 22 (thickness 2) of the 107 mm square pellicle mounted on the substrate surface is used.
mm, height 4 mm, or 6.3 mm) in order to avoid the influence of the frame of the pellicle, as shown in FIG. 10, a position (α = 22.5 ° ± 15) where irradiation can be performed on the substrate surface.
Irradiation device (27, 29) is installed at the right angle (9)
Diagonally above the substrate (β = 22.5 ° ± 15)
The detection device 37 is provided at (°) to detect foreign matter on the substrate 21. However, in the present invention, the irradiation light 30 is applied to the substrate 2
As shown in FIG. 4, the reflected light 26a from the upper surface of the frame 22 of the pellicle film body, the reflected light 26b from the reticle pattern surface 21a, and the pellicle film 23 as shown in FIG.
The reflected light 26c from the upper foreign matter 58 is erroneously detected as a foreign matter on the surface of the substrate 21. Here, since the foreign matter 58 existing on the pellicle film 23 is separated from the substrate 21, the foreign matter 58 is out of focus during projection exposure and does not cause exposure failure. Therefore, the present invention has dealt with erroneous detection by adding the pinhole-shaped light shielding device 57 shown in FIG. 10 and the slit-shaped light shielding device 39 shown in FIG. 11 to the detection device. When detecting a foreign substance on the surface of the substrate using the detection device to which the pinhole-shaped shading device 57 shown in FIG. 10 is added, the substrate 21 is moved in one direction while being moved or rotated in the x and y directions (not shown). 2) Put it on
It needs to be manipulated dimensionally. In addition, the substrate 2 is formed by using the detection device to which the slit-shaped shading device 39 shown in FIG. 11 is added.
When detecting the foreign matter 24 on the surface No. 1, the illumination light is scanned in one direction (y direction) by a scanning procedure (including the galvano mirror 28 and the f.theta. Lens 31 etc.) to scan the substrate 21 with x.
It is possible to detect foreign matter on the entire surface of the substrate by mounting it on a direction table (not shown) and moving it in a direction (x direction) orthogonal to the scanning of the illumination light. 10 and 11 described above
By adopting the pinhole / slit shading device shown in FIG. 2 in the present invention, the pellicle frame 22 as shown in FIG.
Foreign matter on the substrate surface can be detected with high sensitivity without being affected by reflected light such as. Further, by polarizing the illumination light (for example, S-polarized light) and adding an analyzer (for example, S-polarized shut filter) 41 to the detection device, the foreign matter and the gap portion of the circuit pattern are separated from each other as compared with the prior art. It is possible to further improve the sensitivity of the minute foreign matter by utilizing the difference in the polarization angle characteristics of the scattered reflected light between them. Further, in the above embodiment, the smaller the tilt angles α and β, the more effectively the change in the polarization angle can be detected, so the detection sensitivity is improved. However, due to the influence of the frame of the pellicle and the like, both α and β have an angle of 22.5. ± 15 degrees is optimal. Further detection device 3
The uniformity of the detection sensitivity can be improved by directing the optical axes of 7a and 37b (centers of the slits) to points a and b in FIG. 6 (lines x 1 x 2 when moving the reticle). As described above, according to the present invention,
In a reticle, photomask, etc., without turning over (without changing the foreign matter adhesion state), with the surface on which the circuit pattern is formed that is the same as the state of actual projection exposure facing down, separate the foreign matter adhered to both sides. In addition, it is possible to perform inspection with high reliability, and it is possible to eliminate defective exposure due to minute foreign matter adhering to the transparent substrate and to contribute to a large yield improvement in semiconductor production.
【図面の簡単な説明】
【図1】従来技術を説明するための図である。
【図2】本発明の一実施例を示す構成図である。
【図3】本発明の基本構成を示す図である。
【図4】ペリクル枠の影響を示す図である。
【図5】照明光と検査領域の関係および異物検出方向と
検査領域の関係を示す図である。
【図6】基板上の検査領域の関係を示す図である。
【図7】本発明の電気回路を示す図である。
【図8】図9に示す回路で得られる信号波形を示す図で
ある。
【図9】基板の上、下面の異物を検査する装置の構成を
示す図である。
【図10】(A)は図3に示す検出装置にピンホールの
遮光装置を備え付けた場合を示した図、(B)は(A)
のA10矢視拡大図である。
【図11】(A)は検出装置にスリット遮光装置を備え
付けた場合を示した図、(B)は(A)のA11矢視拡大
図である。
【図12】(A)、(B)は本発明の特徴を示す図であ
る。
【符号の説明】
21…基板、 22…ペリクル膜体の枠、 2
3…ペリクル膜
24…異物、 27…レーザ発振器、 2
9…偏光素子
31…f・θレンズ、38,38a,38b…光電変換
素子
39,39a,39b…スリット状遮光装置
40,40a,44b…集光レンズ、 41,41a,
41b…検光装置
42a,42b…電圧増幅器、 43…マルチプ
レクサ
44…ガルバノミラー駆動装置、 45…テーブル
駆動装置
48…記憶装置、 50,51…異
物検出装置
57…ピンホール状遮光装置BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram for explaining a conventional technique. FIG. 2 is a configuration diagram showing an embodiment of the present invention. FIG. 3 is a diagram showing a basic configuration of the present invention. FIG. 4 is a diagram showing an influence of a pellicle frame. FIG. 5 is a diagram showing a relationship between illumination light and an inspection area and a relationship between a foreign matter detection direction and an inspection area. FIG. 6 is a diagram showing a relationship between inspection areas on a substrate. FIG. 7 is a diagram showing an electric circuit of the present invention. 8 is a diagram showing a signal waveform obtained by the circuit shown in FIG. FIG. 9 is a diagram showing a configuration of an apparatus for inspecting foreign matter on upper and lower surfaces of a substrate. 10A is a diagram showing a case where the detection device shown in FIG. 3 is equipped with a pinhole light-shielding device, and FIG. 10B is shown in FIG.
It is the A 10 arrow enlarged view. 11A is a diagram showing a case where a slit light-shielding device is provided in the detection device, and FIG. 11B is an enlarged view of the A 11 arrow in FIG. 11A. 12A and 12B are views showing the features of the present invention. [Explanation of reference numerals] 21 ... Substrate, 22 ... Pellicle film frame, 2
3 ... Pellicle film 24 ... Foreign matter, 27 ... Laser oscillator, 2
9 ... Polarizing element 31 ... f.theta. Lens, 38, 38a, 38b ... Photoelectric conversion element 39, 39a, 39b ... Slit-shaped light shielding device 40, 40a, 44b ... Condensing lens, 41, 41a,
Reference numeral 41b ... Detecting devices 42a, 42b ... Voltage amplifiers, 43 ... Multiplexer 44 ... Galvano mirror driving device, 45 ... Table driving device 48 ... Storage device, 50, 51 ... Foreign matter detecting device 57 ... Pinhole-shaped light shielding device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小泉 光義 神奈川県横浜市戸塚区吉田町292番地株式 会社日立製作所生産技術研究所内 (56)参考文献 特開 昭56−86340(JP,A) 特開 昭57−128834(JP,A) 特開 昭56−115945(JP,A) ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Mitsuyoshi Koizumi Stock, 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Production Engineering Research Laboratory, Hitachi, Ltd. (56) References JP-A-56-86340 (JP, A) JP-A-57-128834 (JP, A) JP-A-56-115945 (JP, A)
Claims (1)
裏面の各々に、直線偏光レーザ照明光を表面用照明集光
光学系及び裏面用照明集光光学系により透明基板面の垂
直方向から67.5±15度傾斜させて直線状に走査し
て集光スポット照射し、前記透明基板を前記直線状走査
方向に対してほぼ直角方向に走査し、表面上及び裏面上
の各々からの散乱光を、透明基板面の垂直方向から6
7.5±15度傾斜させ、且つほぼ前記直線状走査方向
から表面用検出集光光学系及び裏面用検出集光光学系の
各々で集光すると共に該表面用検出集光光学系及び裏面
用検出集光光学系の各々に備えられた検光子及び視野限
定手段から構成された遮光手段で前記回路パターンのエ
ッジから反射する散乱光を遮光し、各遮光手段を通して
集光された光の各々を表面用光電変換手段及び裏面用光
電変換手段の各々で受光し、該表面用光電変換手段から
検出される信号と裏面用光電変換手段から検出される信
号に基づいて前記回路パターンを形成した透明基板の表
面上に付着した異物と前記透明基板の裏面上に付着した
異物とを区別して検出することを特徴とする両面異物検
出方法。 2.表面に回路パターンを形成した透明基板の表面及び
裏面の各々に、直線偏光レーザ照明光を透明基板面の垂
直方向から67.5±15度傾斜させて直線状に走査し
て集光スポット照明する表面用照明集光光学系及び裏面
用照明集光光学系と、前記透明基板を前記直線状走査方
向に対してほぼ直角方向に走査する走査手段と、表面上
及び裏面上の各々からの散乱光を、透明基板面の垂直方
向から67.5±15度傾斜させ、且つほぼ前記直線状
走査方向から集光し、前記回路パターンのエッジから反
射する散乱光を遮光する検光子及び視野限定手段から構
成された遮光手段を有する表面用検出集光光学系及び裏
面用検出集光光学系と、前記各遮光手段を通して前記表
面用検出集光光学系及び裏面用検出集光光学系の各々で
集光された光の各々を受光する表面用光電変換手段及び
裏面用光電変換手段とを備え、該表面用光電変換手段か
ら検出される信号と裏面用光電変換手段から検出される
信号とに基づいて前記回路パターンを形成した透明基板
の表面上に付着した異物と前記透明基板の裏面上に付着
した異物とを区別して検出するように構成したことを特
徴とする両面異物検出装置。[Claims] 1. Linearly polarized laser illuminating light is applied to each of the front surface and the back surface of the transparent substrate having a circuit pattern formed on the front surface by a surface illumination condensing optical system and a back surface illumination condensing optical system from a direction perpendicular to the transparent substrate surface by 67.5 ±. The transparent substrate is scanned in a straight line with a tilt of 15 degrees to irradiate a focused spot, the transparent substrate is scanned in a direction substantially perpendicular to the linear scanning direction, and scattered light from each of the front surface and the back surface is transparent. 6 from the direction perpendicular to the board surface
Inclination by 7.5 ± 15 degrees, and the light is condensed by each of the front-side detection condensing optical system and the back-side detection condensing optical system substantially from the linear scanning direction, and the front-side detection condensing optical system and the back-side condensing optical system The scattered light reflected from the edge of the circuit pattern is shielded by the light shielding means composed of the analyzer and the field limiting means provided in each of the detection / focusing optical systems, and each of the light condensed through each light shielding means is received by each of the photoelectric conversion means and back photoelectric conversion unit for surface, the formation of the circuit pattern based on the signal detected from the signal and the back photoelectric conversion unit detected from the photoelectric conversion means for surface transparent A double-sided foreign matter detection method, wherein foreign matter attached on the front surface of the substrate and foreign matter attached on the rear surface of the transparent substrate are detected separately. 2. On each of the front surface and the back surface of the transparent substrate having a circuit pattern formed on the surface, linearly polarized laser illumination light is tilted 67.5 ± 15 degrees from the direction perpendicular to the transparent substrate surface and linearly scanned to illuminate a focused spot. Front-side illumination condensing optical system and back-side illumination condensing optical system, scanning means for scanning the transparent substrate in a direction substantially perpendicular to the linear scanning direction, and scattered light from each of the front and back sides. From an analyzer and a field-of-view limiting means that inclines 67.5 ± 15 degrees from the direction perpendicular to the transparent substrate surface, and that collects light from substantially the linear scanning direction and blocks scattered light reflected from the edge of the circuit pattern. The front-side detection light collecting optical system and the back-side detection light collecting optical system having the configured light-shielding means, and the front-side detection light collecting optical system and the back-side detection light collecting optical system through the respective light-shielding means. Received each of the light A front surface photoelectric conversion means that emits light and a back surface photoelectric conversion means, and the circuit pattern is formed on the basis of a signal detected from the front surface photoelectric conversion means and a back surface photoelectric conversion means. A double-sided foreign matter detection device, characterized in that it is configured to detect a foreign matter adhered on the front surface of the substrate and a foreign matter adhered on the rear surface of the transparent substrate in distinction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3096770A JPH0816651B2 (en) | 1991-04-26 | 1991-04-26 | Double-sided foreign matter detection method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3096770A JPH0816651B2 (en) | 1991-04-26 | 1991-04-26 | Double-sided foreign matter detection method and device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63-135483A Division JPH01452A (en) | 1988-06-03 | Double-sided foreign object detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04230837A JPH04230837A (en) | 1992-08-19 |
| JPH0816651B2 true JPH0816651B2 (en) | 1996-02-21 |
Family
ID=14173872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3096770A Expired - Lifetime JPH0816651B2 (en) | 1991-04-26 | 1991-04-26 | Double-sided foreign matter detection method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0816651B2 (en) |
Families Citing this family (1)
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|---|---|---|---|---|
| CN107727661B (en) * | 2017-11-02 | 2024-09-13 | 中国科学院光电研究院 | Device and method for determining the location of flaws/stains on the surface of transparent materials |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56115945A (en) * | 1980-02-18 | 1981-09-11 | Hitachi Electronics Eng Co Ltd | Detecting device for defect of panel plate |
| JPS57128834A (en) * | 1981-02-04 | 1982-08-10 | Nippon Kogaku Kk <Nikon> | Inspecting apparatus of foreign substance |
-
1991
- 1991-04-26 JP JP3096770A patent/JPH0816651B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04230837A (en) | 1992-08-19 |
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