JPH08167740A - Pyroelectric infrared thin film element - Google Patents
Pyroelectric infrared thin film elementInfo
- Publication number
- JPH08167740A JPH08167740A JP6331688A JP33168894A JPH08167740A JP H08167740 A JPH08167740 A JP H08167740A JP 6331688 A JP6331688 A JP 6331688A JP 33168894 A JP33168894 A JP 33168894A JP H08167740 A JPH08167740 A JP H08167740A
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- Prior art keywords
- thin film
- substrate
- oriented
- film
- pyroelectric
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は人体検知や炎検知等の用
に供される焦電型赤外線薄膜素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pyroelectric infrared thin film element used for human body detection, flame detection and the like.
【０００２】[0002]
【従来の技術】強誘電体としての特性を生かして焦電素
子から電荷を取り出せるように、分極方向に配向したＰ
ＺＴ系薄膜を作成する場合、例えば格子定数の近いＭｇ
ＯやＳｒＴｉＯ3 等の単結晶を基板として用い、エピタ
キシャル成長させるのが一般的な方法である。2. Description of the Related Art P is oriented in the polarization direction so that electric charges can be taken out from a pyroelectric element by utilizing the characteristics of a ferroelectric substance.
When a ZT-based thin film is formed, for example, Mg having a close lattice constant is used.
It is a general method to epitaxially grow using a single crystal such as O or SrTiO 3 as a substrate.
【０００３】また、その単結晶基板上に下部電極として
Ｐｔ薄膜を被着形成した後に、分極方向に配向したＰＺ
Ｔ系薄膜を作成する場合、その単結晶基板上に、まず、
下部電極をエピタキシャル成長させてから、その上にＰ
ＺＴ系薄膜を析出させていた。例えば特開昭６０−１３
１７０４号公報には、このような構成の焦電形熱検出素
子が提案されている。Further, after a Pt thin film is formed as a lower electrode on the single crystal substrate, PZ oriented in the polarization direction is formed.
When creating a T-based thin film, first, on the single crystal substrate,
After epitaxially growing the lower electrode, P on it
The ZT type thin film was deposited. For example, JP-A-60-13
Japanese Patent No. 1704 proposes a pyroelectric heat detecting element having such a configuration.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上述した従来
のＭｇＯを基板材料とする場合には、そのＭｇＯが非常
に高価であることから製品コストが高くなる難点があっ
た。However, when the above-mentioned conventional MgO is used as the substrate material, there is a problem that the product cost becomes high because the MgO is extremely expensive.
【０００５】このような難点の解消を図るべく、より安
価なＳｉを基板材料として用いる提案がなされている。
例えば、特開昭６２−１６２３６９号公報には、Ｓｉ基
板上にＭｇＯ薄膜を（１００）方向にエピタキシャル成
長させ、その上にＰｔ膜を（１００）方向に配向成長さ
せ、その上に分極方向に配向したＰＺＴ系薄膜を形成す
るようにした強誘電体薄膜素子が提案されている。In order to solve these problems, it has been proposed to use cheaper Si as a substrate material.
For example, in Japanese Unexamined Patent Publication No. 62-162369, a MgO thin film is epitaxially grown in a (100) direction on a Si substrate, a Pt film is oriented and grown in the (100) direction, and a polarization direction is oriented thereon. There has been proposed a ferroelectric thin film element adapted to form the PZT type thin film.
【０００６】ところが、ＭｇＯの熱膨張係数が１３．６
×１０-6／℃であるのに対し、Ｓｉ基板が４．２×１０
-6／℃、Ｐｔ膜が８×１０-6／℃であることから、中間
層としてＭｇＯ薄膜を用いる場合には、剥離の発生が懸
念される。However, the coefficient of thermal expansion of MgO is 13.6.
X10 -6 / ° C, whereas the Si substrate has 4.2x10
Since the Pt film is -6 / ° C and the Pt film is 8 × 10 -6 / ° C, peeling may occur when the MgO thin film is used as the intermediate layer.
【０００７】本発明はこのような実情に鑑みてなされ、
生産過程における膜の定着が良好で歩留りが高くコスト
安な焦電型赤外線薄膜素子を提供することを目的として
いる。The present invention has been made in view of such circumstances.
It is an object of the present invention to provide a pyroelectric infrared thin film element which has good film fixing in the production process, high yield, and low cost.
【０００８】[0008]
【課題を解決するための手段】本発明は上述の課題を解
決するための手段を以下のように構成している。すなわ
ち、請求項１に記載の発明では、Ｓｉ（１００）基板上
に、ＣｅＯ2 を含む（１００）方向に配向したバッファ
層を介してＰｔ膜を（１００）方向に配向させ、その基
板上に、組成式がＰｂＺｒx Ｔｉ1-x Ｏ3 で表わされ、
そのｘの範囲が０≦ｘ≦０．５２であり、かつ分極方向
が（００１）方向である焦電体薄膜を析出させ、その焦
電体薄膜上に赤外透過金属材料よりなる受光部を設けて
なり、かつその受光部下部の基板を受光部より大きく除
去してなることを特徴としている。The present invention comprises means for solving the above-mentioned problems as follows. That is, in the invention described in claim 1, the Pt film is oriented in the (100) direction on the Si (100) substrate through the buffer layer containing CeO 2 and oriented in the (100) direction, and the Pt film is oriented on the substrate. , The composition formula is represented by PbZr x Ti 1-x O 3 ,
A pyroelectric thin film whose x range is 0 ≦ x ≦ 0.52 and the polarization direction is the (001) direction is deposited, and a light receiving portion made of an infrared-transparent metal material is formed on the pyroelectric thin film. It is characterized in that it is provided and the substrate below the light receiving portion is removed more largely than the light receiving portion.
【０００９】請求項２に記載の発明では、請求項１に記
載の発明における前記ＣｅＯ2 を含む（１００）方向に
配向したバッファ層の組成式が（Ｃｅ1-y Ｔｈy ）Ｏ2
で表わされ、そのｙの範囲が０≦ｙ≦０．１１であるこ
とを特徴としている。According to a second aspect of the invention, the composition formula of the buffer layer oriented in the (100) direction containing CeO 2 in the first aspect of the invention is (Ce 1-y Th y ) O 2
And the range of y is 0 ≦ y ≦ 0.11.
【００１０】[0010]
【作用】請求項１に記載の発明では、バッファ層をなす
ＣｅＯ2 の格子定数は５．４１Åであり、基板材料とな
るＳｉの格子定数は５．４３Åに近く、良好な配向性が
得られ、かつ、Ｐｔ膜を（１００）方向に配向させるこ
とができる。その上に、組成がＰｂＺｒx Ｔｉ1-x Ｏ3
（０≦ｘ≦０．５２）であるＰＺＴ系薄膜を分極方向で
ある（１００）方向に配向させることができ、これによ
り、高感度かつ高速応答を達成できる。In the invention described in claim 1, the buffer layer CeO 2 has a lattice constant of 5.41 Å, and the substrate material Si has a lattice constant close to 5.43 Å, and good orientation can be obtained. In addition, the Pt film can be oriented in the (100) direction. On top of that, the composition is PbZr x Ti 1-x O 3
The PZT-based thin film with (0 ≦ x ≦ 0.52) can be oriented in the (100) direction that is the polarization direction, whereby high sensitivity and high-speed response can be achieved.
【００１１】一方、基板上に形成するＰＺＴ系薄膜の結
晶化温度は６００℃以上の高温となるが、その熱膨張係
数は９×１０-6／℃であるのに対し、Ｐｔが８×１０-6
／℃、ＣｅＯ2 が８．４×１０-6／℃、Ｓｉが４．２×
１０-6／℃であることから、これら相互間の熱膨張係数
に大きな差はなく、熱膨張差による剥離の発生を懸念す
るには及ばない。On the other hand, the crystallization temperature of the PZT thin film formed on the substrate is as high as 600 ° C. or higher, but its thermal expansion coefficient is 9 × 10 -6 / ° C., whereas Pt is 8 × 10 6. -6
/ ° C, CeO 2 is 8.4 × 10 -6 / ° C, Si is 4.2 ×
Since it is 10 −6 / ° C., there is no large difference in the thermal expansion coefficient between them, and it is not necessary to worry about the occurrence of peeling due to the difference in thermal expansion.
【００１２】請求項２に記載の発明では、ＣｅＯ2 にＴ
ｈＯ2 を添加させることによって格子定数は５．４１Å
から５．４３Åとなり、より一層Ｓｉの格子定数に近く
なり、ミスマッチ（格子不整合率）がより少なくなり、
エピタキシャル成長がより容易確実なものとなり、配向
性がさらに向上する。このミスマッチの低下により剥離
の発生がさらに抑制される。According to the second aspect of the invention, CeO 2 has a T content.
The lattice constant is 5.41Å by adding hO 2.
To 5.43Å, which is even closer to the lattice constant of Si, and the mismatch (lattice mismatch rate) is smaller,
Epitaxial growth becomes easier and more reliable, and the orientation is further improved. Due to this decrease in mismatch, the occurrence of peeling is further suppressed.
【００１３】[0013]
【実施例】以下に本発明の焦電型赤外線薄膜素子の好ま
しい実施例を図面を参照しつつ詳細に説明する。図１は
焦電型赤外線薄膜素子１の構成を示す断面図で、符号２
は結晶方位（１００）のＳｉよりなる基板、３は表面酸
化膜を除去した基板２上にＣＶＤ法（化学気相成長法）
で（１００）方向にエピタキシャル成長させたＣｅＯ2
膜よりなるバッファ層で、（Ｃｅ1-y Ｔｈy ）Ｏ2 （０
≦ｙ≦０．１１）よりなる化学式で表わされる。４はＣ
ｅＯ2 膜３上にスパッタ法で堆積させた（１００）方向
配向のＰｔ膜で下部電極となり、５はＭＯＣＶＤ法（有
機金属化学気相成長法）により２〜５μｍ厚に析出させ
たＰＺＴ系薄膜、６はＰＺＴ系薄膜５上に被着形成した
上部電極（受光部）となる例えばＣｒ等の赤外透過金属
である。The preferred embodiments of the pyroelectric infrared thin film element of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view showing the structure of a pyroelectric infrared thin film element 1, which is designated by reference numeral 2
Is a substrate made of Si having a crystal orientation (100), and 3 is a CVD method (chemical vapor deposition method) on the substrate 2 from which the surface oxide film is removed.
CeO 2 epitaxially grown in the (100) direction by
A buffer layer made of a film, which is (Ce 1-y Th y ) O 2 (0
≦ y ≦ 0.11). 4 is C
The (100) -oriented Pt film deposited on the eO 2 film 3 by the sputtering method serves as the lower electrode, and 5 is a PZT-based thin film deposited to a thickness of 2 to 5 μm by the MOCVD method (metal organic chemical vapor deposition method). , 6 are infrared-transparent metals such as Cr, which serve as upper electrodes (light-receiving portions) formed on the PZT-based thin film 5 by deposition.
【００１４】このような構成の焦電型赤外線薄膜素子１
では、まず、バッファ層をなすＣｅＯ2 膜３は、面心立
方格子をなすＣｅＯ2 にＴｈＯ2 を添加させることによ
って格子定数が５．４１Åから５．４３Åとなり、同様
に面心立方格子をなすＳｉの格子定数（５．４３Å）に
より近くなり、ミスマッチが小さくなるため、膜の配向
性が向上する。ちなみに、ミスマッチを計算すれば、Ｃ
ｅＯ2 （１００）／／Ｓｉ（１００）では最大で０．３
５％の低い値を示し、エピタキシャル成長が容易である
ことが判る。これに対して、ＭｇＯを基板とする場合に
は、そのＭｇＯがＮａＣｌ型の立方晶であり格子定数が
４．２１Åであることから、ＭｇＯ（１００）／／Ｓｉ
（１００）４５°回転で８．６％とミスマッチの値がか
なり高く、エピタキシャル成長が容易でないことがうか
がえる。また、Ｐｔの格子定数３．９２Åからミスマッ
チを計算すると、Ｐｔ（１００）／／ＣｅＯ2 （１０
０）４５°回転で最大で２．３％と、ＭｇＯの７．１％
に比較して非常に小さいことが判る。The pyroelectric infrared thin film element 1 having such a structure
First, the CeO 2 film 3 forming the buffer layer has a lattice constant of 5.41Å to 5.43Å by adding ThO 2 to CeO 2 forming the face-centered cubic lattice, and similarly forms the face-centered cubic lattice. Since it is closer to the lattice constant of Si (5.43Å) and the mismatch is reduced, the orientation of the film is improved. By the way, if you calculate the mismatch, C
eO 2 (100) // Si (100) has a maximum of 0.3
A low value of 5% indicates that epitaxial growth is easy. On the other hand, when MgO is used as the substrate, the MgO is an NaCl type cubic crystal and has a lattice constant of 4.21Å.
The (100) 45 ° rotation shows a significantly high mismatch value of 8.6%, indicating that epitaxial growth is not easy. Further, when the mismatch is calculated from the lattice constant of Pt of 3.92Å, Pt (100) // CeO 2 (10
0) Maximum of 2.3% at 45 ° rotation, 7.1% of MgO
It turns out that it is very small compared to.
【００１５】以上から、Ｐｔ（１００）／ＣｅＯ2 （１
００）／Ｓｉ（１００）基板を健全に作成することが可
能であり、その上にＰＺＴ系薄膜５を配向成長させるこ
とが可能となる。しかるに、そのＰＺＴ系薄膜５の結晶
化温度は６００℃以上の高温であり、一体化させる材料
との間の熱膨張差があると剥離が発生することが懸念さ
れる。しかし、既述のように、Ｓｉ、ＣｅＯ2 、Ｐｔ、
ＰＺＴの熱膨張係数（×１０-6／℃）は、それぞれ４．
２、８．４、８．９であり、大差はなく、剥離の発生を
懸念するには及ばない。これに対して、ＭｇＯの熱膨張
係数（×１０-6／℃）は１３．６であり、膜の剥離が懸
念される。From the above, Pt (100) / CeO 2 (1
A (00) / Si (100) substrate can be produced soundly, and the PZT-based thin film 5 can be oriented and grown on it. However, the crystallization temperature of the PZT-based thin film 5 is a high temperature of 600 ° C. or higher, and if there is a thermal expansion difference with the material to be integrated, peeling may occur. However, as described above, Si, CeO 2 , Pt,
The thermal expansion coefficient (× 10 −6 / ° C.) of PZT is 4.
The values are 2, 8.4 and 8.9, which are not much different, and are not too much to worry about the occurrence of peeling. On the other hand, the coefficient of thermal expansion of MgO (× 10 −6 / ° C.) is 13.6, and film peeling is a concern.
【００１６】一方、ＰＺＴ系薄膜５の組成をＰｂＺｒx
Ｔｉ1-x Ｏ3 とし、そのｘの範囲を０≦ｘ≦０．５２と
することにより、健全にエピタキシャル成長させたＰ
（１００）／ＣｅＯ2 （１００）／Ｓｉ（１００）基板
と相まって、ＰＺＴ系薄膜は分極方向である（００１）
方向に配向し、高感度、高速応答が達成される。On the other hand, the composition of the PZT thin film 5 is set to PbZr x.
Ti 1-x O 3 was used, and by setting the range of x to 0 ≦ x ≦ 0.52, P that was grown epitaxially soundly
In combination with the (100) / CeO 2 (100) / Si (100) substrate, the PZT-based thin film has a polarization direction (001).
Oriented, high sensitivity and fast response are achieved.
【００１７】このような焦電型赤外線薄膜素子１のプロ
セスを図２（Ａ）〜（Ｅ）を参照しつつ説明すると、ま
ず、表面酸化膜を除去したＳｉ（１００）基板２上にＣ
ＶＤ法または真空蒸着法によりＣｅＯ2 膜（＋Ｔｈ
Ｏ2 ）３をエピタキシャル成長させる〔図２（Ａ）参
照〕。なお、ＴｈＯ2 の添加は同一バッチ内でおこなう
ことができる。次いで、Ｐｔ膜４をスパッタ法で堆積さ
せ〔図２（Ｂ）参照〕、ＰＺＴ系薄膜５を堆積させるた
めの基板とする。The process of the pyroelectric infrared thin film element 1 will be described with reference to FIGS. 2A to 2E. First, C is formed on the Si (100) substrate 2 from which the surface oxide film is removed.
The CeO 2 film (+ Th is formed by the VD method or the vacuum deposition method).
O 2 ) 3 is epitaxially grown [see FIG. 2 (A)]. The ThO 2 can be added in the same batch. Next, the Pt film 4 is deposited by the sputtering method [see FIG. 2 (B)], and is used as a substrate for depositing the PZT-based thin film 5.
【００１８】そのＰｔ／ＣｅＯ2 ／Ｓｉ基板上にＭＯＣ
ＶＤ法によりＰＺＴ系薄膜５を２〜５μｍ析出させる
〔図２（Ｃ）参照〕。次いで、そのＰＺＴ系薄膜５の上
にＣｒ等の赤外透過金属を８０〜１００Å厚堆積させ、
受光部６とする〔図２（Ｄ）参照〕。そして、その受光
部６の下方の基板２を、その受光部６よりも大きくエッ
チングすることにより除去すればプロセスは終了する
〔図２（Ｅ）参照〕。MOC on the Pt / CeO 2 / Si substrate
The PZT thin film 5 is deposited by 2 to 5 μm by the VD method [see FIG. 2 (C)]. Then, an infrared transparent metal such as Cr is deposited on the PZT-based thin film 5 to a thickness of 80 to 100 Å,
The light receiving portion 6 is used [see FIG. 2 (D)]. Then, if the substrate 2 below the light receiving portion 6 is removed by etching to a size larger than that of the light receiving portion 6, the process ends (see FIG. 2E).
【００１９】以上のようにして得られる焦電型赤外線薄
膜素子１はエッチングで多くの部分を除去する基板２の
材料として比較的安価なＳｉを用いていることから、製
品コストの大幅な低減が可能となる。また、従来の単結
晶基板を用いた場合と同様にＰＺＴ系薄膜５の分極方向
（００１）方向の配向が可能となり、高感度かつ高速応
答が達成される。Since the pyroelectric infrared thin film element 1 obtained as described above uses relatively inexpensive Si as the material of the substrate 2 from which many parts are removed by etching, the product cost can be greatly reduced. It will be possible. Further, as in the case of using the conventional single crystal substrate, the PZT thin film 5 can be oriented in the polarization direction (001), and high sensitivity and high speed response can be achieved.
【００２０】そして、格子定数と熱膨張係数があまり差
のない材料を選択していることにより、プロセスにおけ
る膜の剥離の発生を抑制することができ、歩留りの向上
を図ることが可能となる。By selecting a material having a lattice expansion coefficient and a thermal expansion coefficient that are not so different from each other, it is possible to suppress the occurrence of peeling of the film in the process and to improve the yield.
【００２１】[0021]
【発明の効果】以上説明したように、請求項１に記載の
発明では、Ｓｉ（１００）基板上に、ＣｅＯ2 を含む
（１００）方向に配向したバッファ層を介して（１０
０）方向のＰｔ膜を配向させ、そのＰｔ（１００）／Ｃ
ｅＯ2 （１００）／Ｓｉ（１００）基板を形成するの
で、各材料間の格子定数と熱膨張係数に大差はなく、剥
離を発生させることなく、健全にエピタキシャル成長さ
せた基板を形成でき、歩留りを向上することができ、格
段に生産性の向上を図ることができる。また、そのＳｉ
が比較的安価であることから、製品コストの低減を図る
こともできる。しかも、その基板に対して（００１）方
向で組成式がＰｂＺｒx Ｔｉ1-x Ｏ3 （０≦ｘ≦０．５
２）で表わされる焦電体薄膜を形成することにより、健
全な（１００）方向配向の基板と相まって、その焦電体
薄膜を分極方向である（００１）方向に配向し、高感
度、高速応答を達成することができる。As described above, according to the first aspect of the invention, the (10) -oriented buffer layer containing CeO 2 is formed on the Si (100) substrate through the (10) direction.
The Pt film in the 0) direction is oriented and its Pt (100) / C
Since the eO 2 (100) / Si (100) substrate is formed, there is no great difference in the lattice constant and the coefficient of thermal expansion between the respective materials, and it is possible to form a substrate that has been epitaxially grown soundly without causing peeling, and to improve the yield. It is possible to improve the productivity, and it is possible to significantly improve the productivity. In addition, the Si
Since it is relatively inexpensive, the product cost can be reduced. Moreover, the composition formula in the (001) direction with respect to the substrate is PbZr x Ti 1-x O 3 (0 ≦ x ≦ 0.5
By forming the pyroelectric thin film represented by 2), the pyroelectric thin film is oriented in the (001) direction, which is the polarization direction, in combination with the substrate having a sound (100) orientation, and high sensitivity and high speed response. Can be achieved.
【００２２】請求項２に記載の発明では、ＣｅＯ2 にＴ
ｈＯ2 を添加することにより、その格子定数がＳｉの格
子定数により一層近くなり、ミスマッチをより少なくす
ることができ、エピタキシャル成長をより容易確実なも
のとして配向性がさらに向上し、剥離の発生をさらに抑
制してより一層の歩留りの向上を図ることが可能とな
る。In the second aspect of the invention, CeO 2 has a T content.
By adding hO 2 , the lattice constant becomes closer to the lattice constant of Si, the mismatch can be further reduced, the epitaxial growth can be made easier and more reliable, the orientation can be further improved, and the occurrence of peeling can be further suppressed. It is possible to suppress it and further improve the yield.
【図１】本発明の焦電型赤外線薄膜素子の一実施例を示
す構成図である。FIG. 1 is a configuration diagram showing an embodiment of a pyroelectric infrared thin film element of the present invention.
【図２】（Ａ）〜（Ｅ）は焦電型赤外線薄膜素子のプロ
セスの説明図である。2A to 2E are explanatory views of a process of a pyroelectric infrared thin film element.
１…焦電型赤外線薄膜素子、２…Ｓｉ基板、３…バッフ
ァ層、４…Ｐｔ膜（下部電極）、５…焦電体薄膜、６…
受光部。1 ... Pyroelectric infrared thin film element, 2 ... Si substrate, 3 ... Buffer layer, 4 ... Pt film (lower electrode), 5 ... Pyroelectric thin film, 6 ...
Light receiving section.
Claims (2)
む（１００）方向に配向したバッファ層を介してＰｔ膜
を（１００）方向に配向させ、その基板上に、組成式が
ＰｂＺｒx Ｔｉ1-x Ｏ3 で表わされ、そのｘの範囲が０
≦ｘ≦０．５２であり、かつ分極方向が（００１）方向
である焦電体薄膜を析出させ、その焦電体薄膜上に赤外
透過金属材料よりなる受光部を設けてなり、かつその受
光部下部の基板を受光部より大きく除去してなることを
特徴とする焦電型赤外線薄膜素子。1. A Pt film is oriented in the (100) direction on a Si (100) substrate through a buffer layer containing CeO 2 and oriented in the (100) direction, and the composition formula is PbZr x on the substrate. It is represented by Ti 1-x O 3 , and its x range is 0.
A pyroelectric thin film having ≦ x ≦ 0.52 and a polarization direction of (001) is deposited, and a light receiving portion made of an infrared-transparent metal material is provided on the pyroelectric thin film, and A pyroelectric infrared thin film element, characterized in that the substrate below the light receiving portion is removed to a greater extent than the light receiving portion.
向したバッファ層の組成式が（Ｃｅ1-y Ｔｈy ）Ｏ2 で
表わされ、そのｙの範囲が０≦ｙ≦０．１１であること
を特徴とする請求項１に記載の焦電型赤外線薄膜素子。2. The composition formula of the buffer layer containing CeO 2 and oriented in the (100) direction is represented by (Ce 1-y Th y ) O 2 , and the range of y is 0 ≦ y ≦ 0.11. The pyroelectric infrared thin film element according to claim 1, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6331688A JPH08167740A (en) | 1994-12-10 | 1994-12-10 | Pyroelectric infrared thin film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6331688A JPH08167740A (en) | 1994-12-10 | 1994-12-10 | Pyroelectric infrared thin film element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08167740A true JPH08167740A (en) | 1996-06-25 |
Family
ID=18246475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6331688A Pending JPH08167740A (en) | 1994-12-10 | 1994-12-10 | Pyroelectric infrared thin film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08167740A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100578A (en) * | 1997-08-29 | 2000-08-08 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
| US6278138B1 (en) | 1998-08-28 | 2001-08-21 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
| US8004159B2 (en) | 2004-12-03 | 2011-08-23 | Fujifilm Corporation | Piezoelctric actuator, method of manufacturing same, and liquid ejection head |
| WO2011132636A1 (en) * | 2010-04-21 | 2011-10-27 | パナソニック電工株式会社 | Ferroelectric device |
-
1994
- 1994-12-10 JP JP6331688A patent/JPH08167740A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100578A (en) * | 1997-08-29 | 2000-08-08 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
| US6229159B1 (en) | 1997-08-29 | 2001-05-08 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
| US6278138B1 (en) | 1998-08-28 | 2001-08-21 | Sony Corporation | Silicon-based functional matrix substrate and optical integrated oxide device |
| US8004159B2 (en) | 2004-12-03 | 2011-08-23 | Fujifilm Corporation | Piezoelctric actuator, method of manufacturing same, and liquid ejection head |
| WO2011132636A1 (en) * | 2010-04-21 | 2011-10-27 | パナソニック電工株式会社 | Ferroelectric device |
| JP2011228548A (en) * | 2010-04-21 | 2011-11-10 | Panasonic Electric Works Co Ltd | Ferroelectric device |
| KR101382516B1 (en) * | 2010-04-21 | 2014-04-07 | 파나소닉 주식회사 | Ferroelectric device |
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