JPH0817153B2 - Method for manufacturing silicon thin film crystal layer - Google Patents
Method for manufacturing silicon thin film crystal layerInfo
- Publication number
- JPH0817153B2 JPH0817153B2 JP60174053A JP17405385A JPH0817153B2 JP H0817153 B2 JPH0817153 B2 JP H0817153B2 JP 60174053 A JP60174053 A JP 60174053A JP 17405385 A JP17405385 A JP 17405385A JP H0817153 B2 JPH0817153 B2 JP H0817153B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- thin film
- silicon thin
- film
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 33
- 239000010409 thin film Substances 0.000 title claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 13
- 229910052710 silicon Inorganic materials 0.000 title claims description 13
- 239000010703 silicon Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title description 9
- 238000010894 electron beam technology Methods 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 31
- 239000006096 absorbing agent Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、絶縁膜上に単結晶層、特に半導体単結晶層
を成長させる半導体薄膜結晶層の製造方法に関する。TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for producing a semiconductor thin film crystal layer in which a single crystal layer, particularly a semiconductor single crystal layer, is grown on an insulating film.
絶縁膜上に単結晶シリコン層を成長させる、所謂SOI
（絶縁膜上のシリコン層）技術は、３次元ICを実現する
上で最も重要な技術である。SOI技術の中でも、電子ビ
ームを用いたアニール技術は、大面積をアニールできる
点で極めて有望である。しかしながら、電子ビームアニ
ール技術では基板を真空中に配置する必要があり、この
ため、以下に述べるような問題を生じていた。So-called SOI for growing a single crystal silicon layer on an insulating film
The (silicon layer on insulating film) technology is the most important technology for realizing a three-dimensional IC. Among the SOI technologies, the annealing technology using an electron beam is extremely promising because it can anneal a large area. However, the electron beam annealing technique requires the substrate to be placed in a vacuum, which causes the following problems.
第４図（ａ）（ｂ）は従来の電子ビームアニール方法
を説明するための断面図である。この方法では、まず第
４図（ａ）に示す如く、Si基板41上に開孔部42aを有す
るSiO2膜42を形成し、この上に多結晶Si膜43を形成す
る。次いで、この多結晶Si膜43上に電子ビーム44を照射
し、該ビーム44を一方向に走査する。開孔部42aは、基
板41の単結晶領域からの結晶情報を多結晶Si膜43に伝搬
する、所謂種結晶領域となる。この種結晶領域の情報が
間断なく多結晶Si膜43に伝搬するには、電子ビーム44の
照射で溶融した溶融層が種結晶に近い方から順に固化し
ていく必要がある。例えば、第４図（ａ）において、Ａ
→Ｂ→Ｃの順に固化していく必要がある。4 (a) and 4 (b) are sectional views for explaining the conventional electron beam annealing method. In this method, first, as shown in FIG. 4A, a SiO 2 film 42 having an opening 42a is formed on a Si substrate 41, and a polycrystalline Si film 43 is formed thereon. Then, the polycrystalline Si film 43 is irradiated with an electron beam 44, and the beam 44 is scanned in one direction. The opening 42a serves as a so-called seed crystal region that propagates crystal information from the single crystal region of the substrate 41 to the polycrystalline Si film 43. In order for the information on the seed crystal region to propagate to the polycrystalline Si film 43 without interruption, it is necessary to solidify the molten layer melted by the irradiation of the electron beam 44 in order from the one closer to the seed crystal. For example, in FIG. 4 (a), A
It is necessary to solidify in the order of → B → C.
しかしながら、電子ビームアニール技術においては、
系が真空中に置かれるため、必ずしも上記Ａ→Ｂ→Ｃの
順に固化するための温度分布が得られないと云う問題が
ある。即ち、第４図（ａ）に矢印45,46で示す如く、溶
融した多結晶Si膜43の熱は、絶縁膜42を伝わる熱伝導46
或いは多結晶Si膜43の表面からの熱放射45によって拡散
していくが、絶縁膜42の熱伝導率はそもそも低く、更に
熱放射45は前記熱伝導46による熱散逸より小さい。その
結果、多結晶Si膜43中で熱が溜って固化し難くなり、場
合によっては種結晶領域より遠くにあるにも拘らず、絶
縁膜下にある基板に形成した素子形状によっては熱伝導
の多少良い地点では速く固化が起こる。このため、第４
図（ｂ）に示す如く、単結晶がとぎれ多結晶領域47が生
じると云う問題があった。However, in the electron beam annealing technology,
Since the system is placed in a vacuum, there is a problem that the temperature distribution for solidifying in the order of A → B → C cannot always be obtained. That is, as shown by arrows 45 and 46 in FIG. 4A, the heat of the melted polycrystalline Si film 43 is transferred to the insulating film 42 by the heat conduction 46.
Alternatively, the heat radiation 45 from the surface of the polycrystalline Si film 43 causes diffusion, but the thermal conductivity of the insulating film 42 is low in the first place, and the heat radiation 45 is smaller than the heat dissipation by the heat conduction 46. As a result, heat is hard to be accumulated and hardened in the polycrystalline Si film 43, and depending on the shape of the element formed on the substrate under the insulating film, heat conduction may occur depending on the case, although it is far from the seed crystal region. Fast solidification occurs at some good points. Therefore, the fourth
As shown in FIG. 6B, there is a problem that the single crystal is broken to form a polycrystalline region 47.
本発明は上記事情を考慮してなされたもので、その目
的とするところは、電子ビームアニールによる溶融領域
の種結晶に近い側から順に固化させることができ、安定
した単結晶化を行い得るシリコン単結晶層の製造方法を
提供することにある。The present invention has been made in consideration of the above circumstances, and an object of the present invention is to make it possible to solidify sequentially from the side close to the seed crystal in the melting region by electron beam annealing, and to perform stable single crystallization. It is to provide a method for manufacturing a single crystal layer.
本発明の骨子は、熱の吸収体を用い、この熱吸収体を
電子ビーム照射側の該照射領域の近傍に配置して、溶融
領域の種結晶に近い側から順に冷却することにある。The essence of the present invention is to use a heat absorber, arrange the heat absorber near the irradiation region on the electron beam irradiation side, and cool the melted region in order from the side closer to the seed crystal.
即ち本発明は、単結晶シリコン基板上に種結晶領域と
なる開孔部を有するSiO2絶縁膜を形成し、該SiO2絶縁膜
上に非晶質若しくは多結晶のシリコン薄膜を堆積し、該
シリコン薄膜には電子ビームを照射し、該薄膜を前記種
結晶領域より順次溶融・再結晶化するシリコン薄膜結晶
層の製造方法において、前記電子ビームの進行方向に対
して前記電子ビーム照射領域の後方に前記シリコン薄膜
の熱の一部を吸収する熱吸収体を配置して、且つ該熱吸
収体を前記電子ビームの移動に随伴して移動せしめ、こ
れにより溶融した前記シリコン薄膜を前記種結晶領域に
近い順から順に冷却するようにしたものである。That is, the present invention forms a SiO 2 insulating film having an opening portion to be a seed crystal region on a single crystal silicon substrate, deposits an amorphous or polycrystalline silicon thin film on the SiO 2 insulating film, In a method of manufacturing a silicon thin film crystal layer in which a silicon thin film is irradiated with an electron beam, and the thin film is sequentially melted and recrystallized from the seed crystal region, a silicon thin film rear side of the electron beam irradiation region with respect to a traveling direction of the electron beam A heat absorber that absorbs a part of the heat of the silicon thin film, and the heat absorber is moved together with the movement of the electron beam, whereby the molten silicon thin film is melted into the seed crystal region. The cooling is performed in order from the one closest to
本発明によれば熱吸収体を電子ビームのすぐ後るから
電子ビームに随伴して移動させることにより、溶融状態
にあるシリコン膜表面から効果的に熱を吸収し、シリコ
ン膜を種結晶領域に近い側が低くなる理想的な急峻な温
度分布が常に形成され、種結晶を核として確実に固化さ
せることができるのである。このため、単結晶がとぎれ
ることなく、安定した単結晶化を行わせることができ
る。According to the present invention, the heat absorber is moved immediately after the electron beam so that the heat absorber is moved along with the electron beam, so that heat is effectively absorbed from the surface of the silicon film in a molten state, and the silicon film becomes a seed crystal region. An ideal steep temperature distribution in which the near side becomes lower is always formed, and the seed crystal can be reliably solidified with the seed crystal as the nucleus. Therefore, stable single crystallization can be performed without breaking the single crystal.
以下、本発明の詳細を図示の実施例によって説明す
る。Hereinafter, the details of the present invention will be described with reference to the illustrated embodiments.
第１図は本発明の一実施例方法に使用した電子ビーム
アニール装置を示す概略構成図である。図中11は電子銃
であり、この電子銃11から放射された電子ビームは磁気
レンズ12,13,14により集束されステージ15上に載置され
た試料16上に照射される。17は電子ビームをON−OFFす
るブランキング電極である。18は電子ビームの照射領域
近傍にその先端が設けられた熱吸収体でる。この熱吸収
体18は、例えば第２図に示す如く、内部に冷却水を流す
ステンレス管21を有したセラミックス体22なるものであ
り、その先端が前記ビーム照射点から約10［μｍ］離
れ、且つ基板表面から約５［μｍ］の高さに位置するも
のとなっている。FIG. 1 is a schematic configuration diagram showing an electron beam annealing apparatus used in an embodiment method of the present invention. In the figure, 11 is an electron gun, and the electron beam emitted from the electron gun 11 is focused by the magnetic lenses 12, 13, and 14 and is irradiated onto the sample 16 placed on the stage 15. Reference numeral 17 is a blanking electrode that turns the electron beam on and off. Reference numeral 18 is a heat absorber whose tip is provided in the vicinity of the electron beam irradiation region. The heat absorber 18 is, for example, as shown in FIG. 2, a ceramic body 22 having a stainless tube 21 through which cooling water flows, the tip of which is about 10 [μm] away from the beam irradiation point, Moreover, it is located at a height of about 5 [μm] from the substrate surface.
なお、上記試料16は、単結晶Si基板31上に開孔部32a
を有するSiO2膜（絶縁膜）32を形成し、その上に多結晶
Si膜（半導体薄膜）33を堆積したものである。The sample 16 has an opening 32a on the single crystal Si substrate 31.
Forming a SiO 2 film (insulating film) 32 having
A Si film (semiconductor thin film) 33 is deposited.
次に、上記装置を用いたSi薄膜結晶層の製造方法につ
いて説明する。Next, a method of manufacturing a Si thin film crystal layer using the above apparatus will be described.
電子ビームの加速電圧を10［KV］、ビーム電流を１
［mA］とし、第３図（ａ）に示す如くビーム34が試料16
に対し矢印方向に相対的に走査されるよう、試料16を該
矢印と逆方向に移動する。この時の移動速度は、10［cm
/sec］とした。また、前記熱吸収体18の温度は、20
［℃］に保持するようにした。Electron beam acceleration voltage 10 [KV], beam current 1
[MA], and the beam 34 is reflected on the sample 16 as shown in FIG.
The sample 16 is moved in the direction opposite to the arrow so that the sample 16 is scanned relative to the arrow. The moving speed at this time is 10 [cm
/ sec]. The temperature of the heat absorber 18 is 20
It was kept at [° C].
その結果、多結晶Si膜33の溶融流域は、熱吸収体18に
より種結晶（開孔部32a）に近い側から順に強制的に冷
却されることになる。つまり、第３図（ｂ）に示す如
く、多結晶Si膜33の溶融領域は、常にＡ→Ｂ→Ｃの順に
固化される温度分布を持つことになる。このため、単結
晶がとぎれ多結晶領域が生じる等の不都合もなく、良質
の単結晶層を得ることができた。As a result, the melt flow region of the polycrystalline Si film 33 is forcibly cooled by the heat absorber 18 sequentially from the side closer to the seed crystal (opening 32a). That is, as shown in FIG. 3 (b), the molten region of the polycrystalline Si film 33 always has a temperature distribution that is solidified in the order of A → B → C. Therefore, a good quality single crystal layer could be obtained without the inconvenience that the single crystal was interrupted and a polycrystalline region was generated.
このように本実施例方法によれば、熱吸収体18を用
い、この熱吸収体18を電子ビーム34の進行方向に対して
電子ビーム34の照射領域後方に配置して、且つ熱吸収体
18を電子ビーム34の移動に随伴して移動させることによ
り、ビームアニールによる多結晶Si膜33の溶融領域の種
結晶に近い側から順に固化させることができる。このた
め、安定した単結晶化を行い得、３次元ICの製造等に極
めて有効である。Thus, according to the method of the present embodiment, the heat absorber 18 is used, the heat absorber 18 is arranged behind the irradiation region of the electron beam 34 with respect to the traveling direction of the electron beam 34, and
By moving 18 along with the movement of the electron beam 34, it is possible to solidify sequentially from the side closer to the seed crystal in the molten region of the polycrystalline Si film 33 by beam annealing. Therefore, stable single crystallization can be performed, which is extremely effective for manufacturing a three-dimensional IC.
なお、前記ビームアニールすべき半導体薄膜は多結晶
Siに限るものではなく、非晶質Si膜であってもよい。そ
の他、本発明の要旨を逸脱しない範囲で、種々変形して
実施することができる。The semiconductor thin film to be beam annealed is polycrystalline.
The film is not limited to Si and may be an amorphous Si film. In addition, various modifications can be made without departing from the scope of the present invention.
第１図は本発明の一実施例方法に使用した電子ビームア
ニール装置を示す概略構成図、第２図は上記装置に用い
た熱吸収体の具体的構造を示す断面図、第３図（ａ）
（ｂ）は上記装置を用いたSi単結晶層の製造工程を示す
断面図、第４図（ａ）（ｂ）は従来のビームアニール法
の問題点を説明するための断面図である。 11……電子銃、12,〜.14……電磁レンズ、15……試料ス
テージ、16……試料、17……ブランキング電極、18……
熱吸収体、21……ステンレス管、22……セラミックス
体、31……単結晶Si基板、32……SiO2膜（絶縁膜）、32
a……開孔部、33……多結晶Si膜（半導体薄膜）、34…
…電子ビーム。FIG. 1 is a schematic configuration diagram showing an electron beam annealing apparatus used in an embodiment method of the present invention, FIG. 2 is a sectional view showing a specific structure of a heat absorber used in the apparatus, and FIG. 3 (a). )
FIG. 4B is a sectional view showing a manufacturing process of a Si single crystal layer using the above apparatus, and FIGS. 4A and 4B are sectional views for explaining problems of the conventional beam annealing method. 11 …… electron gun, 12, ～ .14 …… electromagnetic lens, 15 …… sample stage, 16 …… sample, 17 …… blanking electrode, 18 ……
Heat absorber, 21 …… Stainless steel tube, 22 …… Ceramics body, 31 …… Single crystal Si substrate, 32 …… SiO 2 film (insulating film), 32
a …… Opening part, 33 …… Polycrystalline Si film (semiconductor thin film), 34…
… Electron beam.
Claims (1)
開孔部を有するSiO2絶縁膜を形成し、該SiO2絶縁膜上に
非晶質若しくは多結晶のシリコン薄膜を堆積した試料の
シリコン薄膜に電子ビームを照射し、該薄膜を前記種結
晶領域より順次溶融・再結晶化するシリコン薄膜結晶層
の製造方法において、電子銃から放射される電子ビーム
をレンズ系により集束してステージ上に照射し、該電子
ビームの進行方向に対して前記電子ビーム照射領域の後
方にはその内部に冷却水を流すステンレス管からなる熱
吸収体の先端部を配置した電子ビームアニール装置を用
い、上記ステージに上記試料を載置するとともに、該試
料上に電子ビームを照射しながら前記熱吸収体を前記電
子ビームの移動に随伴して移動せしめ、電子ビーム照射
により溶融した上記シリコン薄膜を上記熱吸収体により
上記種結晶領域に近い順から順次冷却するようにしたこ
とを特徴とするシリコン薄膜結晶層の製造方法。1. A sample obtained by forming an SiO 2 insulating film having an opening portion serving as a seed crystal region on a single crystal silicon substrate, and depositing an amorphous or polycrystalline silicon thin film on the SiO 2 insulating film. In a method of manufacturing a silicon thin film crystal layer in which a silicon thin film is irradiated with an electron beam, and the thin film is sequentially melted and recrystallized from the seed crystal region, an electron beam emitted from an electron gun is focused by a lens system on a stage. And an electron beam annealing device in which a tip of a heat absorber made of a stainless steel tube through which cooling water flows is disposed behind the electron beam irradiation region with respect to the traveling direction of the electron beam. The sample is placed on a stage, the heat absorber is moved along with the movement of the electron beam while irradiating the sample with the electron beam, and the sample is melted by the electron beam irradiation. A method for producing a silicon thin film crystal layer, wherein the silicon thin film is cooled by the heat absorber in order from a position closer to the seed crystal region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60174053A JPH0817153B2 (en) | 1985-08-09 | 1985-08-09 | Method for manufacturing silicon thin film crystal layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60174053A JPH0817153B2 (en) | 1985-08-09 | 1985-08-09 | Method for manufacturing silicon thin film crystal layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6235511A JPS6235511A (en) | 1987-02-16 |
| JPH0817153B2 true JPH0817153B2 (en) | 1996-02-21 |
Family
ID=15971793
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60174053A Expired - Lifetime JPH0817153B2 (en) | 1985-08-09 | 1985-08-09 | Method for manufacturing silicon thin film crystal layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0817153B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0283915A (en) * | 1988-09-20 | 1990-03-26 | Ricoh Co Ltd | Manufacturing method of semiconductor single crystal thin film |
| CN116043325A (en) * | 2023-03-24 | 2023-05-02 | 北京航空航天大学 | Thin film deposition device and thin film deposition method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59147425A (en) * | 1983-02-10 | 1984-08-23 | Seiko Instr & Electronics Ltd | Formation of semiconductor crystal film |
-
1985
- 1985-08-09 JP JP60174053A patent/JPH0817153B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6235511A (en) | 1987-02-16 |
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