JPH08186196A - Semiconductor device mounting structure - Google Patents

Semiconductor device mounting structure

Info

Publication number
JPH08186196A
JPH08186196A JP6338431A JP33843194A JPH08186196A JP H08186196 A JPH08186196 A JP H08186196A JP 6338431 A JP6338431 A JP 6338431A JP 33843194 A JP33843194 A JP 33843194A JP H08186196 A JPH08186196 A JP H08186196A
Authority
JP
Japan
Prior art keywords
terminal
wiring pattern
rod
substrate
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6338431A
Other languages
Japanese (ja)
Inventor
Tsuneo Kobayashi
常雄 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP6338431A priority Critical patent/JPH08186196A/en
Publication of JPH08186196A publication Critical patent/JPH08186196A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/306Assembling printed circuits with electric components, e.g. with resistors with lead-in-hole components
    • H05K3/308Adaptations of leads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/682Shapes or dispositions thereof comprising holes having chips therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)

Abstract

(57)【要約】 【目的】 PGA型による半導体装置の実装構造におい
て、半導体チップのパッド数の半分の端子数として、P
GA型の半導体パッケージの小型化、高密度化が図れる
ようにする。 【構成】 半導体チップ21のパッドと配線パターン1
5,17とをワイヤ22,23により接続した基板1
1,12,13に4層構造の配線パターン14,15,
17,18を形成し、筒状端子2の中に筒状絶縁体3を
介して棒状端子4を貫通してなる多重構造接続端子1を
基板11,12,13に備える。即ち、2層の配線パタ
ーン14,15のスルーホール16部分に筒状端子2
を、他の2層の配線パターン17,18のスルーホール
19部分に棒状端子4をそれぞれ接続する。そして、多
重構造接続端子1を、表裏両面に配線パターン32,3
3を有する回路基板31に接続する。即ち、回路基板3
1の一面側の配線パターン32に筒状端子2を、他面側
の配線パターン33に棒状端子4をそれぞれ接続する。
(57) [Abstract] [Purpose] In a PGA type semiconductor device mounting structure, the number of terminals, which is half the number of pads of a semiconductor chip, is P
It is possible to reduce the size and density of a GA type semiconductor package. [Structure] Pad of semiconductor chip 21 and wiring pattern 1
Substrate 1 in which wires 5 and 17 are connected to wires 22 and 23
1, 12, 13 have four-layer wiring patterns 14, 15,
Substrates 11, 12, and 13 are provided with multi-structured connection terminals 1 formed by forming the terminals 17 and 18 and penetrating the rod-shaped terminals 4 through the cylindrical insulator 3 in the cylindrical terminals 2. That is, the cylindrical terminal 2 is provided in the through hole 16 portion of the two-layer wiring patterns 14 and 15.
And the rod-shaped terminals 4 are connected to the through holes 19 of the other two wiring patterns 17 and 18, respectively. Then, the multiple structure connection terminal 1 is provided with wiring patterns 32, 3 on both front and back surfaces.
3 is connected to the circuit board 31. That is, the circuit board 3
The cylindrical terminal 2 is connected to the wiring pattern 32 on the one surface side 1 and the rod-shaped terminal 4 is connected to the wiring pattern 33 on the other surface side.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置の実装構造
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device mounting structure.

【0002】[0002]

【従来の技術】IC(Integrated Circ
uit:集積回路)やLSI(Large Scale
Integration:大規模集積回路)等の半導
体装置の実装技術の一つとして、PGA(ピン・グリッ
ド・アレイ)型がある。図5はPGA型の従来のLSI
パッケージの一例構造を示したもので、基板51上に実
装したLSIチップ52の入出力パッド(図示せず)
と、基板51上に形成した配線パターン53,53,5
3,…とを、ワイヤ54,54,54,…によりそれぞ
れ接続するとともに、基板51には、配線パターン5
3,53,53,…に対応した端子ピン55,55,5
5,…を設けている。そして、基板51上のLSIチッ
プ52、配線パターン53,53,53,…およびワイ
ヤ54,54,54,…を絶縁性樹脂56により封止し
ている。このように、PGA型の従来のLSIパッケー
ジは、LSIチップ52の入出力パッド数と1対1に対
応した数の端子ピン55,55,55,…を有してい
る。
2. Description of the Related Art IC (Integrated Circuit)
unit: integrated circuit) or LSI (Large Scale)
Integration: A PGA (pin grid array) type is one of the mounting techniques for semiconductor devices such as large-scale integrated circuits. FIG. 5 shows a conventional PGA type LSI.
1 shows an example structure of a package, which is an input / output pad (not shown) of an LSI chip 52 mounted on a substrate 51.
And the wiring patterns 53, 53, 5 formed on the substrate 51.
, Are connected to each other by wires 54, 54, 54 ,.
Terminal pins 55, 55, 5 corresponding to 3, 53, 53, ...
5, ... are provided. The LSI chip 52, the wiring patterns 53, 53, 53, ... And the wires 54, 54, 54, ... On the substrate 51 are sealed with an insulating resin 56. As described above, the conventional PGA type LSI package has the number of terminal pins 55, 55, 55, ... Corresponding to the number of input / output pads of the LSI chip 52 on a one-to-one basis.

【0003】[0003]

【発明が解決しようとする課題】以上の通り、PGA型
の従来のLSIパッケージでは、LSIチップ52の入
出力パッド数と同数の端子ピン55,55,55,…が
必要となっており、このため、LSIの端子数が増えれ
ば、端子ピンの数も同じく増加し、これによりパッケー
ジが大型化してしまう。従って、PGA型のLSIパッ
ケージの小型化、高密度化が困難になるという問題点が
あった。
As described above, the conventional PGA type LSI package requires the same number of terminal pins 55, 55, 55, ... As the number of input / output pads of the LSI chip 52. Therefore, if the number of terminals of the LSI increases, the number of terminal pins also increases, which causes the package to become large. Therefore, it is difficult to reduce the size and density of the PGA type LSI package.

【0004】本発明の課題は、PGA型による半導体装
置の実装構造において、半導体チップのパッド数の半分
の端子数として、PGA型の半導体パッケージの小型
化、高密度化が図れるようにすることである。
An object of the present invention is to make a PGA type semiconductor package compact and highly dense in a PGA type semiconductor device mounting structure with the number of terminals being half the number of pads of a semiconductor chip. is there.

【0005】[0005]

【課題を解決するための手段】以上の課題を解決すべく
請求項1記載の発明は、半導体チップのパッドと配線パ
ターンとをワイヤにより接続した基板に接続端子を備え
る半導体装置の実装構造であって、前記基板に複層構造
の前記配線パターンを形成し、筒状端子の中に筒状絶縁
体を介して棒状端子を貫通してなる多重構造接続端子を
前記基板に備え、かつ、前記配線パターンの少なくとも
一の層に前記筒状端子を接続して、前記配線パターンの
他の層に前記棒状端子を接続した構成を特徴としてい
る。
In order to solve the above-mentioned problems, the invention according to claim 1 is a mounting structure of a semiconductor device having a connection terminal on a substrate in which a pad of a semiconductor chip and a wiring pattern are connected by a wire. The wiring pattern having a multilayer structure is formed on the substrate, and the substrate is provided with a multi-structured connection terminal formed by penetrating a rod-shaped terminal through a tubular insulator in the tubular terminal. The structure is characterized in that the cylindrical terminal is connected to at least one layer of the pattern and the rod-shaped terminal is connected to another layer of the wiring pattern.

【0006】そして、請求項2記載の発明は、請求項1
記載の発明において、前記配線パターンは少なくとも三
層以上の構造であって、その中の二層が前記基板のスル
ーホール部分で接続され、かつ、このスルーホール部分
において前記筒状端子または前記棒状端子の何れかが接
続される構成を特徴としている。
The invention according to claim 2 is the same as claim 1.
In the invention described above, the wiring pattern has a structure of at least three layers or more, two layers of which are connected at a through hole portion of the substrate, and at the through hole portion, the cylindrical terminal or the rod terminal. It is characterized by a configuration in which any one of them is connected.

【0007】さらに、請求項3記載の発明は、請求項1
または2記載の発明において、表裏両面に配線パターン
を有する回路基板に前記多重構造接続端子が接続され、
かつ、前記回路基板の一面側の前記配線パターンに前記
筒状端子が接続されて、前記回路基板の他面側の前記配
線パターンに前記棒状端子が接続される構成を特徴とし
ている。
Further, the invention according to claim 3 is the same as claim 1
Alternatively, in the invention described in 2, the multiple structure connection terminal is connected to a circuit board having wiring patterns on both front and back surfaces,
In addition, the tubular terminal is connected to the wiring pattern on one surface side of the circuit board, and the rod-shaped terminal is connected to the wiring pattern on the other surface side of the circuit board.

【0008】[0008]

【作用】請求項1記載の発明によれば、複層構造の配線
パターンを形成した基板に対し、筒状端子の中に筒状絶
縁体を介して棒状端子を貫通してなる多重構造接続端子
を組み付けて、その筒状端子を少なくとも一の配線パタ
ーン層に接続して、棒状端子を他の配線パターン層に接
続することにより、PGA型の半導体パッケージにおい
て、多重構造接続端子の一つで二つの端子の接続が行え
るようになるので、端子数が半導体チップのパッド数の
半分になる。
According to the first aspect of the present invention, a multi-structured connection terminal is formed by penetrating a rod-shaped terminal through a cylindrical insulator in a substrate on which a wiring pattern having a multilayer structure is formed. And connecting the cylindrical terminal to at least one wiring pattern layer and connecting the rod-shaped terminal to another wiring pattern layer. Since it becomes possible to connect two terminals, the number of terminals is half the number of pads of the semiconductor chip.

【0009】そして、請求項2記載の発明によれば、二
つの配線パターン層が接続される基板のスルーホール部
分において、筒状端子または棒状端子の何れかを接続す
ることで、三層以上の多層構造の配線パターンを有する
PGA型の半導体パッケージの場合にも対応できる。
According to the second aspect of the present invention, by connecting either the cylindrical terminal or the rod terminal at the through hole portion of the substrate to which the two wiring pattern layers are connected, three or more layers are formed. It can also be applied to the case of a PGA type semiconductor package having a multilayer wiring pattern.

【0010】さらに、請求項3記載の発明によれば、回
路基板に対し、その一面側の配線パターンに筒状端子を
接続して、他面側の配線パターンに棒状端子を接続する
ことにより、多重構造接続端子を接続することで、複層
構造の配線パターンを有するPGA型の半導体パッケー
ジを、表裏両面に配線パターンを有する回路基板に接続
できる。
Further, according to the invention of claim 3, by connecting the cylindrical terminal to the wiring pattern on one side of the circuit board and connecting the rod-shaped terminal to the wiring pattern on the other side of the circuit board, By connecting the multi-structure connection terminals, the PGA type semiconductor package having the wiring pattern of the multilayer structure can be connected to the circuit board having the wiring patterns on both front and back surfaces.

【0011】[0011]

【実施例】以下に、本発明に係る半導体装置の実装構造
の実施例を図1から図4に基づいて説明する。先ず、図
1は本発明に係る半導体装置の実装構造に使用する多重
構造接続端子1の構成を示すもので、2は筒状端子、3
は筒状絶縁体、4は棒状端子である。即ち、多重構造接
続端子1は、導電金属製の筒状端子2の中に電気的絶縁
材料による筒状絶縁体3を介して導電金属製の棒状端子
4を貫通してなるもので、筒状端子2と筒状絶縁体3は
ほぼ同長であり、棒状端子4は筒状端子2から上下両側
にそれぞれ所定量突出する長さとなっている。なお、筒
状端子2の外周にはフランジ5が形成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the mounting structure of a semiconductor device according to the present invention will be described below with reference to FIGS. First, FIG. 1 shows a structure of a multiple structure connection terminal 1 used for a mounting structure of a semiconductor device according to the present invention.
Is a cylindrical insulator, and 4 is a rod-shaped terminal. That is, the multiple structure connection terminal 1 is formed by penetrating a rod-shaped terminal 4 made of a conductive metal into a tubular terminal 2 made of a conductive metal via a cylindrical insulator 3 made of an electrically insulating material. The terminal 2 and the tubular insulator 3 have substantially the same length, and the rod-shaped terminal 4 has a length protruding from the tubular terminal 2 to the upper and lower sides by a predetermined amount. A flange 5 is formed on the outer circumference of the cylindrical terminal 2.

【0012】図2は以上の多重構造接続端子1を用いた
PGA型のLSIパッケージ10の構造例を示したもの
で、このLSIパッケージ10は、三層の基板11,1
2,13に4層の配線パターン14,15,17,18
を積層している。この4層の配線パターン14,15,
17,18は、第1の基板11の表裏両面に形成した第
1の配線パターン14と第2の配線パターン15とをス
ルーホール16により接続するとともに、第2の基板1
2上に形成した第3の配線パターン17と第3の基板1
3上に形成した第4の配線パターン18とを第3の基板
13のスルーホール19により接続してなる。なお、第
3の基板13のスルーホール19は、第1の基板11の
スルーホール16と同一中心線上に形成されている。
FIG. 2 shows an example of the structure of a PGA type LSI package 10 using the above-mentioned multiple structure connection terminal 1. This LSI package 10 has three layers of substrates 11 and 1.
2 and 13 have four layers of wiring patterns 14, 15, 17, 18
Are stacked. This four-layer wiring pattern 14, 15,
The first and second wiring patterns 17 and 18 connect the first wiring pattern 14 and the second wiring pattern 15 formed on both front and back surfaces of the first substrate 11 by through holes 16.
Third wiring pattern 17 and third substrate 1 formed on
The fourth wiring pattern 18 formed on the third substrate 3 is connected by the through hole 19 of the third substrate 13. The through hole 19 of the third substrate 13 is formed on the same center line as the through hole 16 of the first substrate 11.

【0013】そして、図4に示すように、第1の基板1
1上に実装したLSIチップ21の入出力パッド(図示
せず)と、第1の基板11上の配線パターン15,1
5,15,…とを、ワイヤ22,22,22,…により
それぞれ接続するとともに、同じく、LSIチップ21
の他の入出力パッド(図示せず)と、第2の基板12上
の配線パターン17,17,17,…とを、ワイヤ2
3,23,23,…によりそれぞれ接続している。さら
に、第1の基板11上のLSIチップ21、配線パター
ン15,15,15,…、第2の基板12上の配線パタ
ーン17,17,17,…およびワイヤ22,22,2
2,…、ワイヤ23,23,23,…を絶縁性樹脂24
により封止している。
Then, as shown in FIG. 4, the first substrate 1
I / O pads (not shown) of the LSI chip 21 mounted on the first substrate 1 and the wiring patterns 15 and 1 on the first substrate 11.
, 15 are connected by wires 22, 22, 22, ..
Other input / output pads (not shown) and the wiring patterns 17, 17, 17, ... On the second substrate 12 are connected to the wire 2
3, 23, 23, ... Connected respectively. Further, the LSI chip 21 on the first substrate 11, the wiring patterns 15, 15, 15, ..., The wiring patterns 17, 17, 17, ... On the second substrate 12, and the wires 22, 22, 2.
2, ..., Wires 23, 23, 23 ,.
It is sealed by.

【0014】以上の構造において、図2に示すように、
第1の基板11のスルーホール16内に多重構造接続端
子1の筒状端子2を挿入するとともに、第2の基板12
を貫通して第3の基板13のスルーホール19内に筒状
絶縁体3を挿入する。ここで、筒状端子2は、図示のよ
うに、上端を第2の基板12の下面に突き当てて、外周
のフランジ5を第1の配線パターン14の下面に重ねた
状態となっている。また、棒状端子4は、上端を第3の
基板13上の第4の配線パターン18よりも僅かに突出
した状態となっている。
In the above structure, as shown in FIG.
While inserting the cylindrical terminal 2 of the multiple structure connection terminal 1 into the through hole 16 of the first substrate 11, the second substrate 12
And the cylindrical insulator 3 is inserted into the through hole 19 of the third substrate 13 through. Here, the cylindrical terminal 2 is in a state where the upper end is abutted against the lower surface of the second substrate 12 and the flange 5 on the outer periphery is overlapped with the lower surface of the first wiring pattern 14, as shown in the figure. Further, the rod-shaped terminal 4 is in a state in which the upper end thereof slightly protrudes from the fourth wiring pattern 18 on the third substrate 13.

【0015】そして、筒状端子2の外周のフランジ5を
第1の配線パターン14に半田6により接続するととも
に、棒状端子4の上端を第4の配線パターン18に半田
7により接続することで、PGA型のLSIパッケージ
10を構成する。以上により、図4に示すように、第2
の配線パターン15と第3の配線パターン17を一組と
する多重構造接続端子1が多数揃えて備えられたPGA
型のLSIパッケージ10となる。なお、図4におい
て、実際には使用されないダミーの配線パターン15,
17および多重構造接続端子1を、15′,17′,
1′でそれぞれ示している。
Then, the flange 5 on the outer periphery of the cylindrical terminal 2 is connected to the first wiring pattern 14 by the solder 6, and the upper end of the rod-shaped terminal 4 is connected to the fourth wiring pattern 18 by the solder 7. A PGA type LSI package 10 is configured. From the above, as shown in FIG.
PGA provided with a large number of multi-structured connection terminals 1 each including the wiring pattern 15 and the third wiring pattern 17
It becomes a die LSI package 10. In FIG. 4, dummy wiring patterns 15, which are not actually used,
17 and the multi-structure connection terminal 1 are connected to 15 ', 17',
They are indicated by 1 '.

【0016】以上の構成によるPGA型のLSIパッケ
ージ10の回路基板への接続構造例を示したのが図3で
あり、回路基板31には、その表裏両面に配線パターン
32,33がそれぞれ形成されている。このような回路
基板31に対し、PGA型のLSIパッケージ10に備
えられた多重構造接続端子1の棒状端子4の下端を貫通
する。ここで、筒状端子2は、図示のように、下端を回
路基板31の上面に突き当てて、その周囲に上面の配線
パターン32が当接した状態となっている。また、棒状
端子4は、下端を回路基板31の下面の配線パターン3
3よりも僅かに突出した状態となっている。
FIG. 3 shows an example of the structure of connecting the PGA type LSI package 10 to the circuit board having the above-described structure. The circuit board 31 has wiring patterns 32 and 33 formed on both front and back surfaces thereof. ing. The lower end of the rod-shaped terminal 4 of the multi-structured connection terminal 1 provided in the PGA type LSI package 10 penetrates through the circuit board 31. Here, as shown in the figure, the cylindrical terminal 2 is in a state where the lower end is abutted against the upper surface of the circuit board 31 and the wiring pattern 32 on the upper surface is in contact with the periphery thereof. In addition, the bar-shaped terminal 4 has a lower end of the wiring pattern 3 on the lower surface of the circuit board 31.
It is in a state of slightly protruding from the number three.

【0017】そして、棒状端子4の下端を配線パターン
33に半田34により接続するとともに、筒状端子2の
下端を配線パターン32に半田35により接続すること
で、PGA型のLSIパッケージ10を回路基板31に
接続する。以上の通り、PGA型のLSIパッケージ1
0に多重構造接続端子1を用いたことにより、LSIチ
ップ21の2パッド分を一つの多重構造接続端子1で対
応できるため、PGA型のLSIパッケージ10として
小型化できて、高密度実装することができる。
Then, the lower end of the rod-shaped terminal 4 is connected to the wiring pattern 33 by the solder 34, and the lower end of the cylindrical terminal 2 is connected to the wiring pattern 32 by the solder 35, whereby the PGA type LSI package 10 is connected to the circuit board. Connect to 31. As described above, the PGA type LSI package 1
By using the multiple structure connection terminal 1 for 0, two pads of the LSI chip 21 can be handled by one multiple structure connection terminal 1, so that the PGA type LSI package 10 can be miniaturized and mounted at high density. You can

【0018】なお、以上の実施例においては、LSIの
実装構造としたが、本発明はこれに限定されるものでは
なく、IC等の他の半導体装置の実装構造であってもよ
い。また、その他、具体的な細部構造等についても適宜
に変更可能であることは勿論である。
In the above embodiments, the mounting structure of the LSI is used, but the present invention is not limited to this, and a mounting structure of another semiconductor device such as an IC may be used. In addition, it is needless to say that the specific detailed structure and the like can be appropriately changed.

【0019】[0019]

【発明の効果】以上のように、請求項1記載の発明に係
る半導体装置の実装構造によれば、複層構造の配線パタ
ーンを有する基板に対し、筒状端子の中に筒状絶縁体を
介して棒状端子を貫通してなる多重構造接続端子を組み
付けて、その筒状端子を少なくとも一の配線パターン層
に接続して、棒状端子を他の配線パターン層に接続する
ため、PGA型の半導体パッケージにおいて、多重構造
接続端子の一つで二つの端子の接続が行えるようにな
り、端子数を半導体チップのパッド数の半分にすること
ができる。従って、PGA型の半導体パッケージの小型
化、高密度化を達成することができる。
As described above, according to the semiconductor device mounting structure of the first aspect of the present invention, the cylindrical insulator is provided in the cylindrical terminal for the substrate having the wiring pattern of the multilayer structure. A PGA-type semiconductor for assembling a multi-structured connection terminal penetrating the rod-shaped terminal through the connection, connecting the cylindrical terminal to at least one wiring pattern layer, and connecting the rod-shaped terminal to another wiring pattern layer. In the package, one of the multiple structure connection terminals can be connected to two terminals, and the number of terminals can be half the number of pads of the semiconductor chip. Therefore, miniaturization and high density of the PGA type semiconductor package can be achieved.

【0020】そして、請求項2記載の発明に係る半導体
装置の実装構造によれば、二つの配線パターン層が接続
される基板のスルーホール部分において、筒状端子また
は棒状端子の何れかを接続するため、三層以上の多層構
造の配線パターンを有するPGA型の半導体パッケージ
の場合にも対応することができる。
According to the semiconductor device mounting structure of the second aspect of the invention, either the cylindrical terminal or the rod terminal is connected in the through hole portion of the substrate to which the two wiring pattern layers are connected. Therefore, it can be applied to the case of a PGA type semiconductor package having a wiring pattern of a multilayer structure of three layers or more.

【0021】さらに、請求項3記載の発明に係る半導体
装置の実装構造によれば、回路基板に対し、その一面側
の配線パターンに筒状端子を、他面側の配線パターンに
棒状端子をそれぞれ接続して、多重構造接続端子を接続
するため、複層構造の配線パターンを有するPGA型の
半導体パッケージを、表裏両面に配線パターンを有する
回路基板に接続することができる。
Further, according to the mounting structure of the semiconductor device of the third aspect of the present invention, the circuit board is provided with the cylindrical terminals in the wiring pattern on the one surface side and the rod terminals in the wiring pattern on the other surface side. Since the connection is made and the connection terminals of the multiple structure are connected, the PGA type semiconductor package having the wiring pattern of the multilayer structure can be connected to the circuit board having the wiring patterns on both front and back surfaces.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る半導体装置の実装構造に使用する
多重構造接続端子の構成を示す縦断側面図である。
FIG. 1 is a vertical cross-sectional side view showing a structure of a multiple structure connection terminal used for a mounting structure of a semiconductor device according to the present invention.

【図2】本発明を適用した一例としてのPGA型のLS
Iパッケージの構造を示した要部縦断側面図である。
FIG. 2 is a PGA type LS as an example to which the present invention is applied.
It is a principal part longitudinal cross-sectional view which showed the structure of I package.

【図3】図2のLSIパッケージの回路基板への接続構
造例を示した要部縦断側面図である。
FIG. 3 is a vertical sectional side view of an essential part showing an example of a connection structure of the LSI package of FIG. 2 to a circuit board.

【図4】図2のLSIパッケージを上から見た要部概略
平面図である。
FIG. 4 is a schematic plan view of an essential part of the LSI package of FIG. 2 as viewed from above.

【図5】PGA型の従来のLSIパッケージの一例構造
を示した要部縦断側面図である。
FIG. 5 is a vertical sectional side view of a main part showing an example structure of a conventional PGA type LSI package.

【符号の説明】[Explanation of symbols]

1 多重構造接続端子 2 筒状端子 3 筒状絶縁体 4 棒状端子 5 フランジ 6,7 半田 10 LSIパッケージ 11,12,13 基板 14,15,17,18 配線パターン 16,19 スルーホール 21 半導体チップ 22,23 ワイヤ 24 絶縁性樹脂 31 回路基板 32,33 配線パターン 34,35 半田 1 Multiple Structure Connection Terminal 2 Cylindrical Terminal 3 Cylindrical Insulator 4 Rod Terminal 5 Flange 6,7 Solder 10 LSI Package 11,12,13 Substrate 14,15,17,18 Wiring Pattern 16,19 Through Hole 21 Semiconductor Chip 22 , 23 wire 24 insulating resin 31 circuit board 32, 33 wiring pattern 34, 35 solder

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップのパッドと配線パターンと
をワイヤにより接続した基板に接続端子を備える半導体
装置の実装構造であって、 前記基板に複層構造の前記配線パターンを形成し、 筒状端子の中に筒状絶縁体を介して棒状端子を貫通して
なる多重構造接続端子を前記基板に備え、 かつ、前記配線パターンの少なくとも一の層に前記筒状
端子を接続して、前記配線パターンの他の層に前記棒状
端子を接続したことを特徴とする半導体装置の実装構
造。
1. A mounting structure of a semiconductor device, comprising a connection terminal on a substrate in which a pad of a semiconductor chip and a wiring pattern are connected by a wire, wherein the wiring pattern having a multilayer structure is formed on the substrate, and a cylindrical terminal is provided. The substrate is provided with a multi-structured connection terminal formed by penetrating a rod-shaped terminal through a tubular insulator, and the tubular terminal is connected to at least one layer of the wiring pattern to obtain the wiring pattern. A mounting structure for a semiconductor device, wherein the rod-shaped terminal is connected to another layer of the semiconductor device.
【請求項2】 前記配線パターンは少なくとも三層以上
の構造であって、その中の二層が前記基板のスルーホー
ル部分で接続され、 かつ、このスルーホール部分において前記筒状端子また
は前記棒状端子の何れかが接続されることを特徴とする
請求項1記載の半導体装置の実装構造。
2. The wiring pattern has a structure of at least three layers or more, two layers of which are connected at a through hole portion of the substrate, and the cylindrical terminal or the rod terminal is formed at the through hole portion. 2. The mounting structure for a semiconductor device according to claim 1, wherein any one of the above is connected.
【請求項3】 表裏両面に配線パターンを有する回路基
板に前記多重構造接続端子が接続され、 かつ、前記回路基板の一面側の前記配線パターンに前記
筒状端子が接続されて、前記回路基板の他面側の前記配
線パターンに前記棒状端子が接続されることを特徴とす
る請求項1または2記載の半導体装置の実装構造。
3. A circuit board having wiring patterns on both front and back surfaces, the multi-structured connection terminals are connected, and the cylindrical terminals are connected to the wiring pattern on one surface side of the circuit board. The semiconductor device mounting structure according to claim 1, wherein the rod-shaped terminal is connected to the wiring pattern on the other surface side.
JP6338431A 1994-12-27 1994-12-27 Semiconductor device mounting structure Pending JPH08186196A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6338431A JPH08186196A (en) 1994-12-27 1994-12-27 Semiconductor device mounting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6338431A JPH08186196A (en) 1994-12-27 1994-12-27 Semiconductor device mounting structure

Publications (1)

Publication Number Publication Date
JPH08186196A true JPH08186196A (en) 1996-07-16

Family

ID=18318092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6338431A Pending JPH08186196A (en) 1994-12-27 1994-12-27 Semiconductor device mounting structure

Country Status (1)

Country Link
JP (1) JPH08186196A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100280398B1 (en) * 1997-09-12 2001-02-01 김영환 Manufacturing method of stacked semiconductor package module
US6528871B1 (en) 1999-07-27 2003-03-04 Mitsubishi Denki Kabushiki Kaisha Structure and method for mounting semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100280398B1 (en) * 1997-09-12 2001-02-01 김영환 Manufacturing method of stacked semiconductor package module
US6528871B1 (en) 1999-07-27 2003-03-04 Mitsubishi Denki Kabushiki Kaisha Structure and method for mounting semiconductor devices

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