JPH08193295A - Vacuum chamber member made of aluminum of aluminum alloy - Google Patents
Vacuum chamber member made of aluminum of aluminum alloyInfo
- Publication number
- JPH08193295A JPH08193295A JP6823295A JP6823295A JPH08193295A JP H08193295 A JPH08193295 A JP H08193295A JP 6823295 A JP6823295 A JP 6823295A JP 6823295 A JP6823295 A JP 6823295A JP H08193295 A JPH08193295 A JP H08193295A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- vacuum chamber
- pore diameter
- corrosion resistance
- porous layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 50
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 239000011148 porous material Substances 0.000 claims abstract description 72
- 239000010407 anodic oxide Substances 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims description 48
- 239000002244 precipitate Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 26
- 230000008859 change Effects 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 abstract description 101
- 230000007797 corrosion Effects 0.000 abstract description 101
- 238000001312 dry etching Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 92
- 238000012360 testing method Methods 0.000 description 68
- 239000010410 layer Substances 0.000 description 58
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 33
- 238000007743 anodising Methods 0.000 description 25
- 239000000243 solution Substances 0.000 description 21
- 150000001875 compounds Chemical class 0.000 description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 14
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 229910052801 chlorine Inorganic materials 0.000 description 11
- 239000000460 chlorine Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 235000006408 oxalic acid Nutrition 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005868 electrolysis reaction Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 8
- 239000008151 electrolyte solution Substances 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000005266 casting Methods 0.000 description 5
- 238000001125 extrusion Methods 0.000 description 5
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- 229910019018 Mg 2 Si Inorganic materials 0.000 description 2
- 229910017706 MgZn Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 238000001192 hot extrusion Methods 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 229910018084 Al-Fe Inorganic materials 0.000 description 1
- 229910016943 AlZn Inorganic materials 0.000 description 1
- 229910018192 Al—Fe Inorganic materials 0.000 description 1
- 229910018191 Al—Fe—Si Inorganic materials 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910005347 FeSi Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、CVD装置,PVD装
置,ドライエッチング装置などに用いられるAlまたは
Al合金製真空チャンバ部材であって、真空チャンバ内
に導入される腐食性のガスやプラズマに対して優れた耐
食性を発揮するAlまたはAl合金製真空チャンバ部材
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum chamber member made of Al or Al alloy used in a CVD apparatus, a PVD apparatus, a dry etching apparatus, etc., and is suitable for corrosive gas or plasma introduced into the vacuum chamber. On the other hand, the present invention relates to a vacuum chamber member made of Al or Al alloy that exhibits excellent corrosion resistance.
【0002】[0002]
【従来の技術】CVD装置,PVD装置,ドライエッチ
ング装置などに用いられる真空チャンバの内部には、反
応ガスやエッチングガスとしてClやF等のハロゲン元
素を含む腐食性のガスが導入されることから、腐食性ガ
スに対する耐食性(以下、耐ガス腐食性という)が要求
されている。また熱プラズマCVD装置等の場合には、
上記腐食性ガスに加えて、ハロゲン系のプラズマも発生
するので、プラズマに対する耐食性(以下、耐プラズマ
性という)も重要である。2. Description of the Related Art Since a corrosive gas containing a halogen element such as Cl or F is introduced as a reaction gas or an etching gas into a vacuum chamber used in a CVD apparatus, a PVD apparatus, a dry etching apparatus or the like. Corrosion resistance to corrosive gas (hereinafter referred to as gas corrosion resistance) is required. In the case of a thermal plasma CVD device, etc.,
In addition to the above corrosive gas, halogen-based plasma is also generated, and therefore corrosion resistance to plasma (hereinafter referred to as plasma resistance) is also important.
【0003】その為、上記真空チャンバ用材料としては
従来主にステンレス鋼材が用いられていた。しかしなが
ら、ステンレス鋼製の真空チャンバは重量が大きく土台
に大掛かりな工事が必要であり、また熱伝導性が十分で
なく作動時のベーキングに時間がかかるという問題があ
った。更に、ステンレス鋼の合金成分であるCrなどの
重金属が、何らかの要因でプロセス中に放出されて汚染
源となることもあった。そこで、ステンレス鋼より軽量
で、熱伝導性に優れ、しかも重金属汚染のおそれのない
AlまたはAl合金製の真空チャンバの開発が検討され
ている。Therefore, stainless steel has been mainly used as the material for the vacuum chamber. However, the vacuum chamber made of stainless steel has a problem that it is heavy and requires a large amount of work on the base, and the thermal conductivity is not sufficient, and it takes a long time to bake at the time of operation. Further, heavy metals such as Cr, which is an alloy component of stainless steel, may be released during the process as a pollution source for some reason. Therefore, development of a vacuum chamber made of Al or Al alloy, which is lighter than stainless steel, excellent in thermal conductivity, and free from the risk of heavy metal contamination, is under study.
【0004】しかしながら、AlまたはAl合金の地金
表面は耐ガス腐食性および耐プラズマ性が必ずしも良い
訳ではなく、何らかの表面処理を施すことが必要と考え
られ、種々検討されている。例えば、特公平5−538
70号公報には、AlまたはAl合金製真空チャンバ部
材の表面に陽極酸化処理を施し、陽極酸化皮膜を形成す
ることによりAlまたはAl合金の耐ガス腐食性を向上
させて真空チャンバ部材とする発明が開示されている。
しかしながら上記陽極酸化皮膜は、前記腐食性ガスやプ
ラズマとの反応を全く起こさないというものではなく、
使用中に腐食されると反応生成物が微粒子として発生
し、例えば半導体製造に用いられると不良品の原因とな
ることがあり、改善が望まれていた。However, the surface of a bare metal of Al or Al alloy is not necessarily good in gas corrosion resistance and plasma resistance, and it is considered necessary to perform some kind of surface treatment, and various studies have been conducted. For example, Japanese Patent Publication No. 5-538
Japanese Patent Laid-Open No. 70-70 discloses an invention in which the surface of an Al or Al alloy vacuum chamber member is anodized to form an anodized film to improve the gas corrosion resistance of Al or Al alloy to form a vacuum chamber member. Is disclosed.
However, the anodized film does not cause any reaction with the corrosive gas or plasma,
When it is corroded during use, reaction products are generated as fine particles, and when it is used in, for example, semiconductor manufacturing, it may cause defective products, and improvement has been desired.
【0005】また特公平5−53871号公報には、イ
オンプレーティング法を採用しAlまたはAl合金製真
空チャンバ部材の表面に、耐食性に優れた皮膜(例え
ば、TiN、TiC等)を形成する技術が開示されてい
る。但し、上記皮膜をイオンプレーティング等の気相合
成法により作成すると、かなりの処理コストがかかると
いう問題がある。Japanese Patent Publication No. 5-53871 discloses a technique for forming a film (for example, TiN, TiC, etc.) having excellent corrosion resistance on the surface of a vacuum chamber member made of Al or Al alloy by using an ion plating method. Is disclosed. However, if the above-mentioned film is formed by a vapor phase synthesis method such as ion plating, there is a problem that a considerable processing cost is required.
【0006】[0006]
【発明が解決しようとする課題】本発明は上記事情に着
目してなされたものであって、コスト的に有利な陽極酸
化処理法を採用することを前提として、耐ガス腐食性及
び耐プラズマ性に優れたAlまたはAl合金製真空チャ
ンバ部材を提供しようとするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and is based on the premise that a cost-effective anodic oxidation treatment method is adopted, the gas corrosion resistance and the plasma resistance. The present invention is intended to provide a vacuum chamber member made of Al or Al alloy excellent in heat resistance.
【0007】[0007]
【課題を解決するための手段】上記目的を達成した本発
明に係るAlまたはAl合金製真空チャンバ部材とは、
表面に開口したポアを多数有するポーラス層とポアのな
いバリア層からなる陽極酸化皮膜を有し、上記ポーラス
層のポア径を表面側で小さく、基材側で大きくしてなる
ことを要旨とするものである。The vacuum chamber member made of Al or Al alloy according to the present invention which achieves the above object,
The gist of the present invention is to have an anodic oxide film composed of a porous layer having a large number of pores opened on the surface and a barrier layer having no pores, and to make the pore diameter of the porous layer small on the surface side and large on the substrate side. It is a thing.
【0008】尚、上記ポーラス層のポア径を表面側で小
さく、基材側で大きく形成された陽極酸化皮膜は、ポー
ラス層のポア径が深さ方向の任意区間で連続的変化部を
有していてもよく、また非連続的変化部を有していても
よい。さらにポーラス層のポア径が深さ方向の任意区間
で非変化部を有しているものであってもよい。さらに、
C,S,N,P,F,Bよりなる群から選ばれる2種以
上の元素を、陽極酸化皮膜に含有させることによってよ
り優れた耐食性が得られる。The anodic oxide film, which has a small pore diameter on the surface side and a large pore diameter on the substrate side, has a continuous change portion in the pore area of the porous layer in an arbitrary section in the depth direction. It may have a discontinuous change portion. Further, the pore diameter of the porous layer may have a non-change portion in an arbitrary section in the depth direction. further,
By incorporating two or more kinds of elements selected from the group consisting of C, S, N, P, F and B in the anodic oxide film, more excellent corrosion resistance can be obtained.
【0009】上記真空チャンバ部材に用いるAl合金製
基材としては、晶出物及び析出物の平均粒径が10μm
以下であるか、或は上記晶出物及び析出物が、部材表面
中最大面積を有する部材表面に対して平行に配列される
様に調整されたAl合金材料を用いることによって、陽
極酸化皮膜の耐食性に加えて基材自体の耐食性も期待で
きる。また、晶出物及び析出物の平均粒径が10μm以
下であり、且つ晶出物及び析出物の配列方向が最大面積
を有する部材表面に対して平行であることが好ましい。The Al alloy base material used for the vacuum chamber member has an average grain size of crystallized substances and precipitates of 10 μm.
Or by using an Al alloy material adjusted such that the above-mentioned crystallized substances and precipitates are arranged in parallel to the member surface having the largest area in the member surface. In addition to corrosion resistance, the corrosion resistance of the base material itself can be expected. Further, it is preferable that the average grain size of the crystallized substances and the precipitates is 10 μm or less, and the arrangement direction of the crystallized substances and the precipitates is parallel to the surface of the member having the maximum area.
【0010】本発明において真空チャンバ部材とは、真
空チャンバの構造材だけではなく、該真空チャンバ内に
配設されるガス拡散プレート(GDP),クランパー,
シャワーヘッド,サセプター,クランプリング,静電チ
ャックなどの部材であって、Al合金で製作されるもの
には全て適用され、以下の説明では、これらの部材をす
べて包含して真空チャンバ部材と総称する。但し現実に
製作するチャンバとしては、その部材の全てを本発明の
改良品で構成しなければならないという訳ではなく、他
の改良を加えたAl合金や従来公知のステンレス鋼,セ
ラミックス・プラスチック複合材料などと組み合わせ
て、製作したものであっても差支えない場合がある。In the present invention, the vacuum chamber member means not only the structural material of the vacuum chamber, but also the gas diffusion plate (GDP), clamper,
The present invention is applied to all members such as shower heads, susceptors, clamp rings, electrostatic chucks, etc. made of Al alloy, and in the following description, all of these members are collectively referred to as vacuum chamber members. . However, in a chamber to be actually manufactured, not all of its members have to be configured by the improved product of the present invention, but other improved Al alloys, conventionally known stainless steel, ceramics / plastic composite materials In some cases, it may be manufactured in combination with the above.
【0011】[0011]
【作用】本発明者らは、AlまたはAl合金製真空チャ
ンバ部材は、前述の腐食性ガスやプラズマに対する耐食
性が悪いので、これを改善すべく種々の表面改質技術に
ついて鋭意研究を重ねてきた。その結果、AlまたはA
l合金製真空チャンバ部材に陽極酸化処理を行う場合に
は、その陽極酸化皮膜の内部構造や成分組成を制御する
ことが可能であり、これによって耐ガス腐食性及び耐プ
ラズマ性の向上に非常に優れた成果が得られることを見
出した。Since the vacuum chamber member made of Al or Al alloy has poor corrosion resistance to the above-mentioned corrosive gas and plasma, the inventors of the present invention have conducted extensive studies on various surface modification techniques in order to improve it. . As a result, Al or A
When performing anodizing treatment on a vacuum chamber member made of l-alloy, it is possible to control the internal structure and composition of the anodized film, which greatly improves gas corrosion resistance and plasma resistance. We have found that excellent results can be obtained.
【0012】尚、従来技術(例えば、上記特公平5ー5
3870号公報)においても、陽極酸化処理を行うに際
して陽極酸化皮膜の膜厚を制御する技術が含まれてい
る。また、電解条件を変えることで陽極酸化皮膜の構造
が変化することも知られている。しかしながら、陽極酸
化皮膜の内部構造や成分組成を制御することによって腐
食性ガスやプラズマとの腐食反応を抑制しようとする試
みは行われておらず、またこの観点から検討を行った事
例の報告はない。Prior art (for example, the above Japanese Patent Publication No. 5-5
Japanese Patent No. 3870) also includes a technique for controlling the film thickness of the anodized film when performing anodizing treatment. It is also known that the structure of the anodic oxide film changes by changing the electrolysis conditions. However, no attempt has been made to suppress the corrosion reaction with corrosive gas or plasma by controlling the internal structure and composition of the anodized film, and there are no reports of cases examined from this viewpoint. Absent.
【0013】図1は、陽極酸化処理によりAl又はAl
合金製真空チャンバ部材の表面に形成される陽極酸化皮
膜の概略構造を概念的に示す一部断面説明図である。上
記陽極酸化皮膜は、電解が開始されると共に基材1にポ
ア3と呼ばれる凹部を穿孔しながら、上記ポア3を中心
位置に有するセル2を深さ方向に成長せしめる。FIG. 1 shows Al or Al formed by anodizing treatment.
It is a partial cross section explanatory drawing which shows notionally the schematic structure of the anodized film formed on the surface of the alloy vacuum chamber member. The anodized film grows the cell 2 having the pore 3 at the center position in the depth direction while starting the electrolysis and perforating the concave portion called the pore 3 in the base material 1.
【0014】図2は、陽極酸化皮膜の断面図であり、本
発明ではポア3が形成された部分をポーラス層4、該ポ
ーラス層4と基材1との間に介在してポアのない層をバ
リア層5と呼ぶ。該バリア層5はガス透過性を有しない
から、ガスやプラズマがAlやAl合金と接触するのを
防ぐ。FIG. 2 is a cross-sectional view of the anodized film. In the present invention, the portion in which the pores 3 are formed is a porous layer 4, and a layer having no pores is interposed between the porous layer 4 and the substrate 1. Is called a barrier layer 5. Since the barrier layer 5 does not have gas permeability, it prevents gas or plasma from coming into contact with Al or Al alloy.
【0015】尚、上記の様にポーラス層とバリア層を有
する陽極酸化皮膜の場合には、ポーラス層のポア径、セ
ル径およびバリア層の厚さは、夫々の間に正の相関関係
があることが分かっている。そこでまず、本発明者らが
陽極酸化皮膜の内部構造と耐ガス腐食性および耐プラズ
マ性との関係について調べたところ、以下の様な知見を
得た。In the case of an anodic oxide film having a porous layer and a barrier layer as described above, the pore diameter of the porous layer, the cell diameter and the thickness of the barrier layer have a positive correlation. I know that. Therefore, when the present inventors first investigated the relationship between the internal structure of the anodized film and the gas corrosion resistance and plasma resistance, the following findings were obtained.
【0016】第1に、ポーラス層の表面におけるポア径
およびセル径が小さい程、優れた耐プラズマ性を発揮す
ることを見出した。これは、ポアの開口部面積が小さい
程ポーラス層表面の均一性が向上することから、ポア径
およびセル径が大きい場合においてポアの表面側縁部に
発生し易いプラズマの局部的集中を抑制して、ポーラス
層の表面近傍においてプラズマ濃度が不均一となること
を抑制できるからであると考えられる。First, it was found that the smaller the pore diameter and the cell diameter on the surface of the porous layer, the better the plasma resistance. This is because the smaller the opening area of the pores, the more uniform the surface of the porous layer is, so that when the pore diameter and the cell diameter are large, the local concentration of plasma that tends to occur at the side edge of the pore surface is suppressed. It is considered that it is possible to suppress the nonuniform plasma concentration near the surface of the porous layer.
【0017】第2に、ポーラス層の基材側の内部構造と
しては、ポア径およびセル径の大きな構造であること
が、耐ガス腐食性の向上に対して有効に作用することが
分かった。その理由としては、ポア径およびセル径の大
きな構造とすることによってポア内の表面積を含む実質
表面積が小さくなり、腐食性ガスとの反応可能面積が減
少することにより、反応生成物による体積変化が内部構
造に及ぼす悪影響を減少させるからであると考えられ
る。Secondly, it has been found that the internal structure of the porous layer on the substrate side has a large pore diameter and a large cell diameter, which effectively acts to improve the gas corrosion resistance. The reason is that the substantial surface area including the surface area inside the pore is reduced by making the structure with a large pore diameter and cell diameter, and the area that can react with the corrosive gas is reduced, so that the volume change due to the reaction product It is thought that this is because the adverse effect on the internal structure is reduced.
【0018】第3に、バリア層は厚い程、耐ガス腐食性
が良くなることを見出した。上述の通り、バリア層の存
在により、腐食性ガスはAlまたはAl合金基材と容易
に接触することはできない。但し、腐食性ガス雰囲気下
に長時間おかれると、ガスの種類によっては徐々にバリ
ア層内に侵入していくことがある。従って、腐食性ガス
から遮断するだけではなく、更には腐食性ガスに長時間
曝された場合であっても優れた耐ガス腐食性を発揮する
上で、バリア層は厚い方が望ましいのである。Thirdly, it was found that the thicker the barrier layer, the better the gas corrosion resistance. As mentioned above, due to the presence of the barrier layer, the corrosive gas cannot easily contact the Al or Al alloy substrate. However, if it is left in a corrosive gas atmosphere for a long time, it may gradually penetrate into the barrier layer depending on the type of gas. Therefore, it is desirable that the barrier layer be thicker in order not only to shield from corrosive gas but also to exhibit excellent gas corrosion resistance even when exposed to corrosive gas for a long time.
【0019】以上の知見から、ポーラス層の表面側のポ
ア径はできるだけ小さく形成し、一方、基材側のポア径
はできるだけ大きく形成してバリア層を厚くする様な構
造が望ましいとの結論を得た。From the above findings, it is concluded that it is desirable to form a structure in which the pore size on the surface side of the porous layer is formed as small as possible, while the pore size on the substrate side is formed as large as possible to thicken the barrier layer. Obtained.
【0020】但し、本発明はポア径を限定するものでは
なく、少なくともポーラス層の基材側ポア径を表面側ポ
ア径より大きくすることによって耐食性の向上を図るも
のであるが、優れた耐プラズマ性を得るには、表面側ポ
ア径を80nm以下とすることが好ましく、50nm以
下であればより好ましく、さらに好ましくは30nm以
下である。また、耐ガス腐食性を十分発揮する上で、バ
リア層の厚さは50nm以上が好ましく、80nm以上
であればより好ましい。However, the present invention does not limit the pore diameter, and at least improves the corrosion resistance by increasing the pore diameter on the substrate side of the porous layer to be larger than the pore diameter on the surface side. In order to obtain the property, the surface-side pore diameter is preferably 80 nm or less, more preferably 50 nm or less, further preferably 30 nm or less. In addition, the thickness of the barrier layer is preferably 50 nm or more, more preferably 80 nm or more, in order to sufficiently exhibit the gas corrosion resistance.
【0021】また本発明では、少なくとも上記ポーラス
層の基材側ポア径を表面側ポア径より大きくしていれば
よく、上記ポーラス層のポアの基材側と表面側の中間部
におけるポア径を限定するものではない。従って該中間
部は任意区間において連続的変化部,非連続的変化部,
非変化部が任意に混在可能であり、またポア径が基材側
から表面側に向かう途中で一旦小さくなっても良く、或
いは途中で中断されたものを含んでいても差しつかえな
い。Further, in the present invention, it is sufficient that at least the pore diameter of the porous layer on the base material side is larger than the pore diameter of the front surface side, and the pore diameter in the intermediate portion between the base material side and the surface side of the pores of the porous layer is set to It is not limited. Therefore, the middle part is a continuous change part, a discontinuous change part,
The non-changed portions can be arbitrarily mixed, and the pore diameter may be once reduced on the way from the base material side to the surface side, or may include a portion interrupted on the way.
【0022】例えばポア径が深さ方向に連続的に変化し
ていてもよく、この場合には、表面側から基材側に向け
て順次ポア径の大きくなっているものや、表面側から基
材側に向けて順次ポア径が大きくなった後に再びポア径
を小さくし、さらに再度ポア径を大きくしてポア径を連
続的に変化させたものなど種々のものが可能である。For example, the pore diameter may be continuously changed in the depth direction. In this case, the pore diameter gradually increases from the front surface side to the base material side, or the base diameter increases from the front surface side. It is possible to use various materials such that the pore diameter is gradually increased toward the material side, then the pore diameter is decreased again, and the pore diameter is increased again to continuously change the pore diameter.
【0023】またポア径の異なるポーラス層が2層以上
積層されてポア径が段階的に変化する様な構造であって
もよい。この場合には、ポア径の変化はできるだけ小さ
いことが好ましく、中間層としてポア径が連続的に変化
する傾斜層を設けて積層することが望ましい。この様な
ポーラス層の構造の選択は、それぞれの部材の適用部位
によって適宜選定すればよい。Further, it may have a structure in which two or more porous layers having different pore diameters are laminated so that the pore diameter changes stepwise. In this case, it is preferable that the change in the pore diameter is as small as possible, and it is desirable to provide and stack an inclined layer as the intermediate layer in which the pore diameter continuously changes. The selection of such a structure of the porous layer may be appropriately selected depending on the application site of each member.
【0024】尚、以上の説明では、陽極酸化皮膜のポア
径に代表される内部構造が深さ方向に変化している場合
について述べてきた。しかし、ポア径を変化させるべく
電解条件を変えた場合には、表面のポア径が全表面に亘
って均一になるとは限らず、表面の形状や位置によって
は平面的に見て変化することが多い。従って特に高い耐
プラズマ性が要求される部分を選んで特にその部位の表
面側ポア径を可及的に小さくする様にしてもよい。従っ
て局部的に見れば、ポア径についての本発明条件を満足
しない部分もあり得るが、全体的傾向として本発明条件
を満足しておれば良いのである。In the above description, the case where the internal structure represented by the pore diameter of the anodic oxide film changes in the depth direction has been described. However, when the electrolysis conditions are changed to change the pore diameter, the pore diameter of the surface is not always uniform over the entire surface, and may change in plan view depending on the shape and position of the surface. Many. Therefore, it is possible to select a portion that requires particularly high plasma resistance and make the surface-side pore diameter of that portion as small as possible. Therefore, when viewed locally, there may be a portion that does not satisfy the condition of the present invention regarding the pore diameter, but it is sufficient if the condition of the present invention is satisfied as an overall tendency.
【0025】本発明は、陽極酸化皮膜の厚さを限定する
ものではないが、優れた耐食性を発揮するには、0.0
5μm以上形成することが好ましく、0.1μm以上で
あればより好ましい。但し、皮膜厚さが厚過ぎると、内
部応力等の影響により割れを生じて表面の被覆が不充分
になったり、更には皮膜の剥離を起こすので50μm以
下とすることが望ましい。即ち、皮膜厚さが50μmを
超えると皮膜自身によって応力を緩和することが困難に
なる場合もあり、割れを生じて皮膜が剥離し、逆に不良
発生の問題を引き起こすことがあるので注意が必要であ
る。The present invention does not limit the thickness of the anodic oxide coating, but it is 0.0 if it has excellent corrosion resistance.
The thickness is preferably 5 μm or more, more preferably 0.1 μm or more. However, if the film thickness is too thick, cracking occurs due to the influence of internal stress and the like, the surface coating becomes insufficient, and further the film peels off, so the film thickness is preferably 50 μm or less. That is, if the film thickness exceeds 50 μm, it may be difficult to relax the stress by the film itself, cracks may occur and the film may peel off, which may cause problems of defectiveness on the contrary. Is.
【0026】本発明は電解に用いる溶液の種類を限定す
るものではなく、硫酸,りん酸,クロム酸などの無機
酸、或いはギ酸やしゅう酸などの有機酸が使用できる
が、陽極酸化の電解電圧を広い範囲で任意に制御できる
面から、しゅう酸を1g/リットル以上含有する電解液
を用いることが推奨される。例えば図3は、硫酸,しゅ
う酸,りん酸の3種の陽極酸化処理溶液を用いて、種々
の電解条件で陽極酸化皮膜を形成した場合の電解電圧と
電流密度の関係を示すグラフである。硫酸の場合は、電
解電圧の変化によって電流密度が大きく変化することか
ら、成膜速度が大きい。一方りん酸の場合は電解電圧を
比較的大きく変化させても電流密度の変化が小さく、ま
た成膜速度が小さい。従って、硫酸は成膜速度が大き過
ぎて膜厚の制御が難しく、一方りん酸は成膜速度が小さ
過ぎて生産効率が悪いということが言える。これに対し
てしゅう酸は電解電圧の変化に対する電流密度の変化が
硫酸とりん酸の中間程度であり、生産効率をりん酸ほど
損なうことなく、内部構造を制御することが容易であ
る。The present invention does not limit the kind of solution used for electrolysis, and inorganic acids such as sulfuric acid, phosphoric acid and chromic acid, or organic acids such as formic acid and oxalic acid can be used. It is recommended to use an electrolytic solution containing oxalic acid in an amount of 1 g / liter or more from the viewpoint that the temperature can be arbitrarily controlled in a wide range. For example, FIG. 3 is a graph showing the relationship between electrolysis voltage and current density when an anodized film is formed under various electrolysis conditions using three types of anodizing solutions of sulfuric acid, oxalic acid, and phosphoric acid. In the case of sulfuric acid, the film formation rate is high because the current density greatly changes due to the change in electrolysis voltage. On the other hand, in the case of phosphoric acid, the change in current density is small even when the electrolysis voltage is changed relatively large, and the film formation rate is small. Therefore, it can be said that the film formation rate of sulfuric acid is too high to control the film thickness, and that of phosphoric acid is too low and the production efficiency is poor. On the other hand, oxalic acid has a change in current density with respect to a change in electrolysis voltage that is intermediate between sulfuric acid and phosphoric acid, and it is easy to control the internal structure without degrading production efficiency as much as phosphoric acid.
【0027】以上は、陽極酸化皮膜の内部構造を制御す
ることによって、耐ガス腐食性および耐プラズマ性を向
上させた陽極酸化皮膜を説明したが、更に本発明者らが
鋭意研究を重ねた結果、陽極酸化皮膜の成分組成を調整
することによって、より一層の耐食性改善効果が得られ
ることをつきとめた。即ち、C,S,N,P,F,B
(以下、本発明に係る元素ということがある)よりなる
群から選ばれる2種以上の元素を、陽極酸化皮膜中に含
有させることによって、ガスやプラズマに対する耐食性
が一層向上することを見出したのである。The anodic oxide film having improved gas corrosion resistance and plasma resistance by controlling the internal structure of the anodic oxide film has been described above. As a result of further intensive studies by the present inventors. It was found that the corrosion resistance can be further improved by adjusting the composition of the anodized film. That is, C, S, N, P, F, B
It has been found that the corrosion resistance to gas and plasma is further improved by incorporating two or more elements selected from the group consisting of (hereinafter, sometimes referred to as an element according to the present invention) in the anodized film. is there.
【0028】尚、陽極酸化処理溶液として例えばしゅう
酸やギ酸などの有機酸を用いると、Al4 C3 ,Al2
C6 ,HCOOH,(COOH)2 等のCを含む化合物
[その他、−CO3 ,−C2 O4 ,−COOHなどのC
x Oy Hz 基(x≧1、y,z≧0の整数)を含有する
化合物]が陽極酸化皮膜中に含有される。従って、しゅ
う酸などの有機酸を陽極酸化処理溶液に用いる場合に
は、C以外のS,N,P,F,Bより1種以上の元素を
含有させて2種以上とすればよく、具体的な方法として
は、以下に例示する化合物を陽極酸化処理溶液に添加す
ればよい。If an organic acid such as oxalic acid or formic acid is used as the anodizing solution, Al 4 C 3 , Al 2
Compounds containing C such as C 6 , HCOOH and (COOH) 2 [Other C such as —CO 3 , —C 2 O 4 and —COOH
A compound containing an x O y H z group (an integer of x ≧ 1, y, z ≧ 0)] is contained in the anodized film. Therefore, when an organic acid such as oxalic acid is used in the anodizing solution, one or more elements other than S, N, P, F, and B other than C may be contained to form two or more elements. As a typical method, the compounds exemplified below may be added to the anodizing treatment solution.
【0029】 Sの場合:H2 SO4 ,Al2 (SO
4 )3 等を陽極酸化処理溶液に添加することにより、H
2 SO4 ,H2 SO3 ,Al2 (SO4 )3 ,Al(H
SO 4 )3 等のSを含む化合物[その他、−SO4 ,−
SO3 ,−HSO4 などのS x Oy Hz 基(x≧1、
y,z≧0の整数)を含有する化合物]が陽極酸化皮膜
中に含有される。In case of S: H2 SOFour , Al2 (SO
Four )3 Etc. to the anodizing treatment solution
2 SOFour , H2 SO3 , Al2 (SOFour )3 , Al (H
SO Four )3 Compounds containing S such as [others, -SOFour ,-
SO3 , -HSOFour Such as S x Oy Hz Group (x ≧ 1,
[compound containing y, z ≧ 0)] is an anodized film
Contained in.
【0030】 Nの場合:HNO3 ,Al(NO3 )
3 等を陽極酸化処理溶液に添加することにより、HNO
3 ,HNO2 ,Al(NO3 )3 等のNを含む化合物
[その他、−NO3 ,−NO2 などのNx Oy Hz 基
(x≧1、y,z≧0の整数)を含有する化合物]が陽
極酸化皮膜中に含有される。In the case of N: HNO 3 , Al (NO 3 )
By adding 3 etc. to the anodizing solution, HNO
Compounds containing N such as 3 , HNO 2 and Al (NO 3 ) 3 [in addition, N x O y H z groups such as —NO 3 and —NO 2 (x ≧ 1, y, integers of z ≧ 0) Compounds contained] are contained in the anodized film.
【0031】 Pの場合:H3 PO4 ,H3 PO3 ,
AlPO4 等を陽極酸化処理溶液に添加することによ
り、H3 PO4 ,H2 PHO3 ,AlPO4 等のPを含
む化合物[その他、−PO4 ,−HPO4 ,−H2 PO
4 ,−HPHO3 などのPx O y Hz 基(x≧1、y,
z≧0の整数)を含有する化合物]が陽極酸化皮膜中に
含有される。For P: H3 POFour , H3 PO3 ,
AlPOFour Is added to the anodizing solution.
H3 POFour , H2 PHO3 , AlPOFour Including P such as
Mu compound [Other, -POFour , -HPOFour , -H2 PO
Four , -HPHO3 Such as Px O y Hz Groups (x ≧ 1, y,
containing an integer of z ≧ 0] is contained in the anodized film.
Contained.
【0032】 Fの場合:HF等を陽極酸化処理溶液
に添加することにより、Fを含む化合物が陽極酸化M皮
膜膜中に含有される。 Bの場合:(NH4 )2 B4 O7 ,H3 BO3 等を
陽極酸化処理溶液に添加することにより、B2 O3 ,
(NH4 )2 B4 O7 等のBを含む化合物[その他、−
BO3 ,−B4 O7 などBx Oy Hz 基(x≧1、y,
z≧0の整数)を含有する化合物]が陽極酸化皮膜中に
含有される。In the case of F: A compound containing F is contained in the anodized M coating film by adding HF or the like to the anodizing treatment solution. In the case of B: (NH 4 ) 2 B 4 O 7 , H 3 BO 3, etc. were added to the anodizing solution to obtain B 2 O 3 ,
Compounds containing B such as (NH 4 ) 2 B 4 O 7 [others,-
BO 3 , -B 4 O 7 and other B x O y H z groups (x ≧ 1, y,
containing an integer of z ≧ 0] is contained in the anodized film.
【0033】尚、陽極酸化処理溶液に添加する上記化合
物の量は、S,N,P,F,Bという夫々の元素量に換
算して0.1g/リットル以上が好ましく、0.1g/
リットル未満の場合には顕著な効果を発揮することは難
しい。The amount of the above compound added to the anodizing solution is preferably 0.1 g / liter or more, and 0.1 g / liter in terms of the amount of each element of S, N, P, F and B.
When it is less than liter, it is difficult to exert a remarkable effect.
【0034】上述の通り、しゅう酸を陽極酸化処理溶液
として用いると、しゅう酸に由来するC含有化合物が陽
極酸化皮膜に含有されるので、C以外の本発明に係る元
素(S,N,P,F,B)を1種以上含有させれば良
く、また硫酸を陽極酸化処理溶液として用いる場合に
は、硫酸に由来するS含有化合物が陽極酸化皮膜に含有
されるので、S以外の本発明に係る元素(C,N,P,
F,B)を1種以上含有させれば良い。この様に、陽極
酸化処理溶液に含有される元素の種類に応じて、該含有
元素以外の本発明に係る元素を含む化合物を、上記陽極
酸化処理溶液に添加し、結果として2種以上の本発明に
係る元素を陽極酸化皮膜に含有させれば良い。As described above, when oxalic acid is used as the anodizing treatment solution, a C-containing compound derived from oxalic acid is contained in the anodic oxide film, so that elements other than C (S, N, P) according to the present invention can be used. , F, B), and when sulfuric acid is used as an anodizing treatment solution, since the S-containing compound derived from sulfuric acid is contained in the anodized film, the present invention other than S can be used. Elements related to (C, N, P,
One or more of F and B) may be contained. Thus, depending on the type of element contained in the anodizing solution, a compound containing an element according to the present invention other than the contained element is added to the anodizing solution, and as a result, two or more kinds of The element according to the invention may be contained in the anodized film.
【0035】また、陽極酸化処理液に上記化合物を添加
する方法以外にも、基材のAl合金に、合金化元素とし
て本発明に係る元素を含有したものを用いてもよく、ま
たイオン注入等の表面改質法により基材の表面層だけに
上記元素を含有させた後陽極酸化処理する方法を採用し
てもよい。いずれの方法を用いる場合であっても、最終
的に本発明に係る元素を2種以上含有させることによ
り、陽極酸化皮膜の耐ガス腐食性および耐プラズマ性を
向上できる。In addition to the method of adding the above compound to the anodizing treatment solution, the Al alloy of the base material containing the element according to the present invention as an alloying element may be used, or ion implantation or the like may be used. It is also possible to adopt a method in which the above elements are contained only in the surface layer of the base material by the surface modification method and then anodization is performed. Whichever method is used, the gas corrosion resistance and plasma resistance of the anodized film can be improved by finally incorporating two or more elements according to the present invention.
【0036】上記元素を陽極酸化皮膜に含有させる量
(重量%にて)としては、耐ガス腐食性および耐プラズ
マ性の向上を図る上で、Cは0.01%以上が好まし
く、0.5%以上であるとより望ましい。Sは0.02
%以上が好ましく、2%以上であるとより望ましい。N
は0.01%以上が好ましく、0.7以上であるとより
望ましい。Pは0.015%以上が好ましく、1%以上
であるとより望ましい。Fは0.01%以上が好まし
く、0.5%以上であるとより望ましい。Bは0.01
5%以上が好ましく、0.3%以上であるとより望まし
い。The amount of the above elements to be contained in the anodized film (in% by weight) is preferably 0.01% or more, and 0.5% or less in order to improve gas corrosion resistance and plasma resistance. % Or more is more desirable. S is 0.02
% Or more is preferable, and 2% or more is more preferable. N
Is preferably 0.01% or more, and more preferably 0.7 or more. P is preferably 0.015% or more, and more preferably 1% or more. F is preferably 0.01% or more, and more preferably 0.5% or more. B is 0.01
It is preferably 5% or more, and more preferably 0.3% or more.
【0037】本発明は基材となるAl合金を限定する訳
ではないが、例えばチャンバ材料としては機械的強度,
熱伝導率,電気伝導率,耐食性の観点で優れている10
00系合金や5000系合金,6000系合金が望まし
い。1000系合金は純アルミニウム系であるが、50
00系合金の場合には、少なくとも合金成分としてS
i:0.5重量%以下,Mg:0.5〜6.0重量%を
含有していることが好ましく、また6000系合金の場
合には、少なくとも合金成分としてSi:0.2〜1.
2重量%、Mg:0.4〜1.5重量%を含有している
ことが好ましい。尚、チャンバ内部品の場合には、50
00系合金や6000系合金の他に、2000系合金や
7000系合金などを用いることもできる。また、Al
合金の合金成分として、Mg,Si,Cu,Fe等を含
有することにより、高周波や高温(熱サイクル)に対す
る陽極酸化皮膜の耐割れ性向上、酸化膜内部応力の低減
にも効果を発揮することが分かっている。特に6000
系合金の成分元素であるMg,Siがあると効果的であ
り、材料の最終熱処理条件によってその効果が影響を受
ける場合がある。Although the present invention does not limit the Al alloy as the base material, for example, the chamber material has a mechanical strength,
Excellent in terms of thermal conductivity, electrical conductivity and corrosion resistance 10
00 series alloys, 5000 series alloys, and 6000 series alloys are desirable. The 1000 series alloy is a pure aluminum series, but 50
In the case of a 00-based alloy, at least S is used as an alloy component.
i: 0.5 wt% or less and Mg: 0.5 to 6.0 wt% are preferable, and in the case of a 6000 series alloy, Si: 0.2 to 1.
It is preferable to contain 2% by weight and Mg: 0.4 to 1.5% by weight. In the case of chamber internal parts, 50
In addition to the 00-based alloy and the 6000-based alloy, a 2000-based alloy and a 7000-based alloy may be used. Also, Al
By containing Mg, Si, Cu, Fe, etc. as alloy components of the alloy, it is also effective in improving crack resistance of the anodic oxide film against high frequency and high temperature (thermal cycle) and reducing internal stress of the oxide film. I know. Especially 6000
The presence of Mg and Si, which are the constituent elements of the system alloy, is effective, and the effect may be affected by the final heat treatment conditions of the material.
【0038】尚、Al合金を基材として用いる場合に
は、Al合金中に含まれる合金化元素や不可避不純物に
起因する晶出物及び析出物が含有される場合が多い。晶
出物及び析出物が存在すると、腐食性の高いClやF等
のハロゲン元素等が、マトリックスであるAlとの界面
に侵入しやすく、耐食性に悪影響を及ぼすことがある。
従って、Al合金中の晶出物及び析出物が微細に分散し
ている材料を選択するか、晶出物又は析出物が腐食性元
素の侵入方向に対して連続的に存在しない様に構成する
ことが推奨される。具体的には、晶出物及び析出物の平
均粒径が10μm以下の材料を用いることが好ましい。
また晶出物及び析出物の平均粒径が10μmを超える場
合には、熱間加工により配列した晶出物及び析出物の配
列方向が部材表面に対して、特にプラズマやガスに暴露
される最大表面積を有する面に対して、平行である様に
配慮して用いることが望ましい。さらに、晶出物及び析
出物の粒径と配列方向を同時に上述の様に制御すればよ
り好ましい。When an Al alloy is used as a base material, it often contains crystallized substances and precipitates due to alloying elements and unavoidable impurities contained in the Al alloy. When crystallized substances and precipitates are present, halogen elements such as Cl and F, which are highly corrosive, easily enter the interface with Al that is the matrix, which may adversely affect the corrosion resistance.
Therefore, select a material in which crystallized substances and precipitates in the Al alloy are finely dispersed, or configure such that crystallized substances or precipitates do not continuously exist in the intrusion direction of the corrosive element. Is recommended. Specifically, it is preferable to use a material having an average grain size of crystallized substances and precipitates of 10 μm or less.
When the average grain size of crystallized substances and precipitates exceeds 10 μm, the arrangement direction of crystallized substances and precipitates arranged by hot working is the maximum with respect to the surface of the member, especially exposed to plasma or gas. It is desirable to use it so that it is parallel to a surface having a surface area. Further, it is more preferable to control the grain size and the arrangement direction of the crystallized substances and precipitates at the same time as described above.
【0039】上記晶出物及び析出物の平均粒径が10μ
m以下であることが耐食性向上に有効である理由として
は、晶出物及び析出物が微細に形成されている場合には
晶出物及び析出物の連続性がなくなって相互の間隔も適
切に保ち易く、耐食性を向上させることができるもので
あると考えられる。晶出物の場合では、その平均粒径が
6μm以下であることが好ましく、3μm以下であれば
より好ましい。析出物の場合では、その平均粒径が2μ
m以下であることが好ましく、1μm以下であればより
好ましい。尚、晶出物及び析出物の平均粒径が本発明の
範囲を満足する場合であっても、最大の粒径を有する晶
出物または析出物が大き過ぎる場合には、耐食性に悪影
響を与える場合がある。従って晶出物及び析出物の最大
粒径は15μm以下が好ましく、10μm以下がより好
ましい。The average grain size of the above-mentioned crystallized substance and precipitate is 10 μm.
The reason why the value of m or less is effective for improving the corrosion resistance is that when the crystallized substances and the precipitates are finely formed, the continuity of the crystallized substances and the precipitates is lost and the mutual spacing is also appropriate. It is considered to be easy to maintain and to improve the corrosion resistance. In the case of crystallized substances, the average particle size is preferably 6 μm or less, and more preferably 3 μm or less. In the case of precipitates, the average particle size is 2μ
It is preferably m or less, and more preferably 1 μm or less. Even if the average grain size of crystallized substances and precipitates satisfies the range of the present invention, if the crystallized substances or precipitates having the maximum grain size are too large, the corrosion resistance is adversely affected. There are cases. Therefore, the maximum grain size of crystallized substances and precipitates is preferably 15 μm or less, more preferably 10 μm or less.
【0040】また本発明による部材を使用する環境によ
っては、使用中に析出物が成長し、その粒径が増大する
場合がある。粒径が大きくなった場合でも最大の粒径が
上記の範囲内にあることが好ましいが、それが難しい環
境で用いる場合には、析出物の粒径が可及的に小さい材
料(具体的には、析出物の平均粒径が2μm以下,好ま
しくは1μm以下の材料)を選択することが望ましい。Further, depending on the environment in which the member according to the present invention is used, precipitates may grow during use and the particle size thereof may increase. Even when the particle size becomes large, it is preferable that the maximum particle size is within the above range, but when it is used in an environment where it is difficult, the material with the smallest particle size of the precipitate (specifically, It is desirable to select a material having an average grain size of precipitates of 2 μm or less, preferably 1 μm or less.
【0041】Al合金において晶出物及び析出物を微細
に分散形成させる要因としては、合金組成における合金
化元素や不可避不純物の含有量を少なくすること以外
に、鋳造速度を制御することが挙げられる。即ち、鋳造
時の冷却速度を可及的に大きくすることにより、晶出物
及び析出物の平均粒径及び体積分率を小さく制御するこ
とが可能である。具体的には、鋳造時の冷却速度は1℃
/sec以上が好ましく、10℃/sec以上がより好
ましい。Factors for finely forming crystallized substances and precipitates in the Al alloy include controlling the casting speed in addition to reducing the content of alloying elements and unavoidable impurities in the alloy composition. . That is, by increasing the cooling rate during casting as much as possible, it is possible to control the average grain size and volume fraction of crystallized substances and precipitates to be small. Specifically, the cooling rate during casting is 1 ° C
/ Sec or more is preferable, and 10 ° C / sec or more is more preferable.
【0042】更に、析出物については、最終的に施され
る熱処理(例えば、T4,T6等と称されるもの)によ
って、粒径や形状,分布状態等を制御することができ
る。その方法としては、溶体化処理温度をできるだけ高
く設定して(例えば、固相高温ぎりぎりまで上昇させ
て)、過飽和の固溶体を形成し、その後2段,3段等の
多段時効処理を行なうことが有効である。この様に鋳造
後であっても、上記の熱処理を施すことによって析出物
の粒径を一層小さく制御することが可能である。Further, with respect to the precipitate, the grain size, shape, distribution state, etc. can be controlled by the final heat treatment (for example, those called T4, T6 etc.). As the method, it is possible to set the solution heat treatment temperature as high as possible (for example, to raise the temperature to the solid-phase high temperature to the utmost) to form a supersaturated solid solution, and then to perform multi-step aging treatment such as two-stage or three-stage treatment. It is valid. Even after the casting as described above, it is possible to control the grain size of the precipitate to be smaller by performing the above heat treatment.
【0043】また、晶出物及び析出物は鋳造後の熱間押
出や熱間圧延等に際して押出方向や圧延方向に配列され
がちである。このように晶出物及び析出物が特定方向に
配列している場合であっても、真空チャンバ部材として
用いる際に、その配列方向を考慮して、真空チャンバ部
材の形状ごとに最大面積を有する面と晶出物及び析出物
の配列方向が平行となる様にすることによって、耐食性
向上に寄与する。Further, the crystallized substances and the precipitates are likely to be arranged in the extrusion direction or the rolling direction during hot extrusion or hot rolling after casting. Even when crystallized substances and precipitates are arranged in a specific direction in this way, when used as a vacuum chamber member, the arrangement direction is taken into consideration and the maximum area is provided for each shape of the vacuum chamber member. By making the planes parallel to the array direction of crystallized substances and precipitates, it contributes to the improvement of corrosion resistance.
【0044】尚、真空チャンバ部材の種類によっては、
その部材の形状に由来する制約から、最大面積を有する
面と晶出物及び析出物の配列方向とが垂直となることが
ある。例としては、部材形状が円盤状であるサセプタ
ー,ガス拡散プレート,静電チャックの誘電体プレート
等が挙げられる。例えば上記サセプターは円柱状の押出
材を輪切りにすることにより円盤状に製造される場合が
多く、熱間押出方向に配列した晶出物及び析出物の配列
方向と、上記サセプターの上面及び底面とが直交するこ
とが一般的である。従って、このようなサセプターの様
な真空チャンバ部材の場合には、晶出物及び析出物の配
列方向に配慮するのではなく、むしろ晶出物及び析出物
の平均粒径を前述の通り可及的に小さく制御することに
より、耐食性の向上を図れば良い。Depending on the type of vacuum chamber member,
Due to the restrictions derived from the shape of the member, the surface having the maximum area may be perpendicular to the direction in which crystallized substances and precipitates are arranged. Examples include a susceptor having a disk-shaped member, a gas diffusion plate, a dielectric plate of an electrostatic chuck, and the like. For example, the susceptor is often manufactured in a disk shape by cutting a columnar extruded material into slices, the arranging direction of crystallized substances and precipitates arranged in the hot extrusion direction, and the top and bottom surfaces of the susceptor. Are generally orthogonal. Therefore, in the case of a vacuum chamber member such as such a susceptor, the arrangement direction of the crystallized substances and the precipitates is not taken into consideration, but rather the average grain size of the crystallized substances and the precipitates is controlled as described above. The corrosion resistance may be improved by controlling it to be small.
【0045】更に、晶出物及び析出物の平均粒径及び/
又は配列方向を制御することに加えて、晶出物及び析出
物の体積分率を可及的に小さく制御することにより、よ
り一層耐食性を向上させることが可能である。具体的に
は、晶出物及び析出物の体積分率は4%以下であること
が推奨され、より好ましくは2%以下であり、1%以下
であると更に望ましい。Furthermore, the average grain size of crystallized substances and precipitates and /
Alternatively, in addition to controlling the arrangement direction, it is possible to further improve the corrosion resistance by controlling the volume fraction of crystallized substances and precipitates to be as small as possible. Specifically, the volume fraction of crystallized substances and precipitates is recommended to be 4% or less, more preferably 2% or less, and further preferably 1% or less.
【0046】尚、晶出物及び析出物の平均粒径と体積分
率の組合わせにおいて望ましい範囲は以下の通りであ
る。即ち、晶出物の場合では、平均粒径が6μm以下で
且つ体積分率が4%以下(望ましくは2%以下)である
ことが好ましく、平均粒径が3μm以下で且つ体積分率
が2%以下(望ましくは1%以下)であればより好まし
い。一方析出物の場合では、平均粒径が2μm以下で且
つ体積分率が4%以下(望ましくは2%以下)であるこ
とが好ましく、平均粒径が1μm以下で且つ体積分率が
2%以下(望ましくは1%以下)であればより好まし
い。Desirable ranges of the combination of the average grain size of the crystallized substances and the precipitates and the volume fraction are as follows. That is, in the case of a crystallized substance, it is preferable that the average grain size is 6 μm or less and the volume fraction is 4% or less (desirably 2% or less), and the average grain size is 3 μm or less and the volume fraction is 2%. % Or less (desirably 1% or less) is more preferable. On the other hand, in the case of precipitates, the average particle size is preferably 2 μm or less and the volume fraction is 4% or less (desirably 2% or less), and the average particle size is 1 μm or less and the volume fraction is 2% or less. It is more preferable if it is (preferably 1% or less).
【0047】本発明において、晶出物とは液相から形成
される化合物を言い、析出物とは固相から形成される化
合物をいう。晶出物や析出物の種類は、Al合金の組成
に応じて変化するものであり、その種類により限定され
るものではないが、例示すれば以下の通りである。In the present invention, the crystallized substance means a compound formed from a liquid phase, and the precipitate means a compound formed from a solid phase. The types of crystallized substances and precipitates vary depending on the composition of the Al alloy and are not limited by the types, but are as follows, for example.
【0048】1000系Al合金の晶出物(以下、10
00系晶出物という)には、Al3Fe,Al6 Fe等
のAl−Fe系晶出物と、α−AlFeSi,β−Al
FeSi等のAl−Fe−Si系晶出物がある。200
0系Al合金の晶出物は上記1000系晶出物と同様で
あり、析出物としては、Al2 Cu,Al2 CuMg,
Al6 CuMg4 などが挙げられる。Crystallized substances of 1000 series Al alloys (hereinafter 10
00-based crystallized substances) include Al-Fe-based crystallized substances such as Al 3 Fe and Al 6 Fe, and α-AlFeSi, β-Al.
There are Al-Fe-Si based crystallized substances such as FeSi. 200
The crystallization product of the 0-system Al alloy is the same as the above-mentioned 1000-system crystallization product, and as the precipitation product, Al 2 Cu, Al 2 CuMg,
Al 6 CuMg 4 and the like can be mentioned.
【0049】3000系Al合金の晶出物は上記100
0系晶出物に加えて、Al6 Mn,Al4 Mn,AlM
n,Al12Mn,Al12Fe3 Si,Al12Mn3 S
i,Al9 Mn2 Si等があり、析出物は主としてAl
6 Mnである。Crystallized substances of 3000 series Al alloy are 100 above.
In addition to 0-based crystallized substances, Al 6 Mn, Al 4 Mn, AlM
n, Al 12 Mn, Al 12 Fe 3 Si, Al 12 Mn 3 S
i, Al 9 Mn 2 Si, etc., and the precipitates are mainly Al
6 Mn.
【0050】5000系Al合金の晶出物は上記100
0系晶出物に加えて、Al3 Mg2,Al12Mg17,A
l7 Cr,Al18Mg3 Cr2 ,Al18Mg3 Mn2 等
があり、析出物としてはAl3 Mg2 ,Al2 CuMg
等が挙げられる。The crystallized substances of 5000 series Al alloy are 100 above.
In addition to the 0-system crystallized product, Al 3 Mg 2 , Al 12 Mg 17 , A
l 7 Cr, Al 18 Mg There are 3 Cr 2, Al 18 Mg 3 Mn 2 and the like, as the deposit Al 3 Mg 2, Al 2 CuMg
Etc.
【0051】6000系Al合金の晶出物は上記100
0系晶出物に加えて、Mg2 Si,Si,Al8 Mg5
等があり、析出物としては主としてMg2 Si,Al2
CuMg等がある。The crystallization product of the 6000 series Al alloy is 100 above.
In addition to 0-type crystallized substances, Mg 2 Si, Si, Al 8 Mg 5
Etc., and the precipitates are mainly Mg 2 Si, Al 2
There are CuMg and the like.
【0052】7000系Al合金の晶出物は上記100
0系晶出物に加えて、Al8 Mg5,AlZn,Mg2
Zn11,MgZn2 等があり、析出物としてはMg2 Z
n11,MgZn2 ,Al2 Mg3 Zn3 ,Al2 CuM
g等がある。The crystallization product of 7000 series Al alloy is 100 above.
In addition to 0-type crystallized substances, Al 8 Mg 5 , AlZn, Mg 2
Zn 11 , MgZn 2, etc., and Mg 2 Z as a precipitate
n 11 , MgZn 2 , Al 2 Mg 3 Zn 3 , Al 2 CuM
g etc.
【0053】以下本発明を実施例によって更に詳細に説
明するが、下記実施例は本発明を限定する性質のもので
はなく、前・後記の趣旨に徴して設計変更することはい
ずれも本発明の技術的範囲に含まれるものである。The present invention will be described in more detail with reference to the following examples, but the following examples are not intended to limit the present invention, and any change in the design of the present invention can be made without departing from the spirit of the preceding and the following. It is included in the technical scope.
【0054】[0054]
【実施例】実施例1 表1に示す各種Al合金板を用いて、表1に併記する種
々の構造を有する陽極酸化皮膜を形成して試験片とし
た。尚、ポーラス層のポア径はいずれも深さ方向に連続
的に変化している。ポーラス層の層数、各ポーラス層の
表面側および基材側ポア径、陽極酸化処理に用いた電解
液種類と上記陽極酸化皮膜の厚さを表1に示す。 Example 1 Using various Al alloy plates shown in Table 1, anodized films having various structures shown in Table 1 were formed to obtain test pieces. It should be noted that the pore diameters of all the porous layers continuously change in the depth direction. Table 1 shows the number of porous layers, the pore diameters on the surface side and substrate side of each porous layer, the type of electrolytic solution used for anodizing treatment, and the thickness of the anodized film.
【0055】上記試験片のハロゲン系ガスに対する耐食
性を評価することを目的として、5%Cl2 −Ar混合
ガスにより、300℃で4時間のガス腐食試験を行い、
試験後の外観を調べて以下の基準で評価した。 [ガス腐食試験] ○: 腐食発生なし △: 腐食発生面積率 5%未満 ×: 腐食発生面積率 5%以上For the purpose of evaluating the corrosion resistance of the above-mentioned test piece to a halogen-based gas, a gas corrosion test was carried out with a 5% Cl 2 -Ar mixed gas at 300 ° C. for 4 hours,
The appearance after the test was examined and evaluated according to the following criteria. [Gas corrosion test] ○: No corrosion occurred △: Corrosion occurrence area ratio less than 5% ×: Corrosion occurrence area ratio 5% or more
【0056】また、前記試験片の耐プラズマ性を評価す
るため、低バイアス条件下で90分間の塩素プラズマ照
射試験を行い、その被エッチング量を測定して、以下の
様に評価した。 [プラズマ照射試験] ○: 被エッチング量 2μm未満 △: 被エッチング量 2μm以上5μm未満 ×: 被エッチング量 5μm以上 上記ガス腐食試験およびプラズマ照射試験の結果は表1
に示す。Further, in order to evaluate the plasma resistance of the test piece, a chlorine plasma irradiation test was performed for 90 minutes under a low bias condition, and the etching amount was measured, and evaluated as follows. [Plasma irradiation test] ○: Etching amount less than 2 μm Δ: Etching amount 2 μm or more and less than 5 μm ×: Etching amount 5 μm or more The results of the above gas corrosion test and plasma irradiation test are shown in Table 1.
Shown in
【0057】[0057]
【表1】 [Table 1]
【0058】表1の結果から明らかな様に、本発明に係
る条件を満足するNo.1〜5は、優れた耐ガス腐食性
および耐プラズマ性を示した。一方No.6〜9は、本
発明に係る条件のいずれかを満足しない比較例であり、
耐ガス腐食性または耐プラズマ性の少なくとも一方が不
充分である。As is clear from the results shown in Table 1, No. 1 which satisfies the conditions according to the present invention. Nos. 1 to 5 showed excellent gas corrosion resistance and plasma resistance. On the other hand, No. 6 to 9 are comparative examples that do not satisfy any of the conditions according to the present invention,
At least one of gas corrosion resistance and plasma resistance is insufficient.
【0059】実施例2 しゅう酸溶液を電解液とし表2に示す各種Al合金板を
用いて、表2に併記する種々の構造を有する陽極酸化皮
膜を形成して試験片とした。尚、ポーラス層のポア径は
いずれも深さ方向に連続的に変化している。ポーラス層
の層数、各ポーラス層の表面側および基材側のポア径と
上記陽極酸化皮膜の厚さを表2に示す。上記試験片を用
いて実施例1と同様の方法によりガス腐食試験およびプ
ラズマ照射試験を行い耐ガス腐食性および耐プラズマ性
を調べた。結果は表2に示す。 Example 2 Using an oxalic acid solution as an electrolytic solution and various Al alloy plates shown in Table 2, anodic oxide coatings having various structures shown in Table 2 were formed to obtain test pieces. It should be noted that the pore diameters of all the porous layers continuously change in the depth direction. Table 2 shows the number of porous layers, the pore diameters on the surface side and the substrate side of each porous layer, and the thickness of the anodized film. Using the above test piece, a gas corrosion test and a plasma irradiation test were conducted in the same manner as in Example 1 to examine gas corrosion resistance and plasma resistance. The results are shown in Table 2.
【0060】[0060]
【表2】 [Table 2]
【0061】表2の結果から明らかな様に、本発明に係
る条件を満足するNo.1〜5は、優れた耐ガス腐食性
および耐プラズマ性を示した。一方No.6〜9は、本
発明に係る条件のいずれかを満足しない比較例であり、
耐ガス腐食性または耐プラズマ性の少なくとも一方が不
充分である。As is clear from the results shown in Table 2, No. 1 which satisfies the conditions according to the present invention. Nos. 1 to 5 showed excellent gas corrosion resistance and plasma resistance. On the other hand, No. 6 to 9 are comparative examples that do not satisfy any of the conditions according to the present invention,
At least one of gas corrosion resistance and plasma resistance is insufficient.
【0062】実施例3 表3に示す各種Al合金板を用いて、表3に併記する種
々の構造を有する陽極酸化皮膜を形成して試験片とし
た。尚、ポーラス層が2層以上積層されている陽極酸化
皮膜はポア径が段階的に変化している。但し、No.4
は中間層としてポア径が連続的に変化する傾斜層を設け
た。ポーラス層の構造と、陽極酸化処理に用いた電解液
種類および上記陽極酸化皮膜の厚さを表3に示す。上記
試験片を用いて実施例1と同様の方法によりガス腐食試
験およびプラズマ照射試験を行い耐ガス腐食性および耐
プラズマ性を調べた。結果は表3に示す。 Example 3 Using various Al alloy plates shown in Table 3, anodic oxide coatings having various structures shown in Table 3 were formed into test pieces. In addition, the pore diameter of the anodized film in which two or more porous layers are laminated is changed stepwise. However, No. Four
Was provided with an inclined layer having a continuously changing pore diameter as an intermediate layer. Table 3 shows the structure of the porous layer, the type of electrolytic solution used for the anodizing treatment, and the thickness of the anodized film. Using the above test piece, a gas corrosion test and a plasma irradiation test were conducted in the same manner as in Example 1 to examine gas corrosion resistance and plasma resistance. The results are shown in Table 3.
【0063】[0063]
【表3】 [Table 3]
【0064】表3の結果から明らかな様に、本発明に係
る条件を満足するNo.1〜8は、優れた耐ガス腐食性
および耐プラズマ性を示した。一方No.9〜12は、
本発明に係る条件のいずれかを満足しない比較例であ
り、耐ガス腐食性または耐プラズマ性の少なくとも一方
が不充分である。As is clear from the results shown in Table 3, No. 1 satisfying the conditions according to the present invention. Nos. 1 to 8 showed excellent gas corrosion resistance and plasma resistance. On the other hand, No. 9 to 12
It is a comparative example that does not satisfy any of the conditions according to the present invention, and at least one of gas corrosion resistance and plasma resistance is insufficient.
【0065】実施例4 しゅう酸溶液を電解液とし表4に示す各種Al合金板を
用いて、表4に併記する種々の構造を有する陽極酸化皮
膜を形成して試験片とした。尚、ポーラス層が2層以上
積層されている陽極酸化皮膜はポア径が段階的に変化し
ている。但し、No.2およびNo.8は中間層として
ポア径が連続的に変化する傾斜層を設けた。ポーラス層
の構造と上記陽極酸化皮膜の厚さを表4に示す。 Example 4 Using an oxalic acid solution as an electrolytic solution and using various Al alloy plates shown in Table 4, anodic oxide films having various structures shown in Table 4 were formed to obtain test pieces. In addition, the pore diameter of the anodized film in which two or more porous layers are laminated is changed stepwise. However, No. 2 and No. In No. 8, an inclined layer having a continuously changing pore diameter was provided as an intermediate layer. Table 4 shows the structure of the porous layer and the thickness of the anodized film.
【0066】上記試験片を用いて、ガス腐食試験の条件
を300℃で4時間とし、また塩素プラズマ照射試験の
照射時間を120分間とした以外は、実施例1と同様に
してガス腐食試験およびプラズマ照射試験を行い耐ガス
腐食性および耐プラズマ性を調べた。結果は表4に示
す。Using the above test piece, the gas corrosion test and the gas corrosion test were carried out in the same manner as in Example 1 except that the conditions of the gas corrosion test were 300 ° C. for 4 hours and the irradiation time of the chlorine plasma irradiation test was 120 minutes. A plasma irradiation test was conducted to examine gas corrosion resistance and plasma resistance. The results are shown in Table 4.
【0067】[0067]
【表4】 [Table 4]
【0068】表4の結果から明らかな様に、本発明に係
る条件を満足するNo.1〜9は、優れた耐ガス腐食性
および耐プラズマ性を示した。一方No.10〜14
は、本発明に係る条件のいずれかを満足しない比較例で
あり、耐ガス腐食性または耐プラズマ性の少なくとも一
方が不充分である。As is clear from the results shown in Table 4, No. 1 satisfying the conditions according to the present invention. Nos. 1 to 9 showed excellent gas corrosion resistance and plasma resistance. On the other hand, No. 10-14
Is a comparative example that does not satisfy any of the conditions according to the present invention, and at least one of gas corrosion resistance and plasma resistance is insufficient.
【0069】実施例5 表5に示す各種Al合金板を用いて、表5に併記する種
々の構造を有する陽極酸化皮膜を形成して試験片とし
た。尚、ポーラス層の構造の変化をポア径で表すと共
に、陽極酸化処理に用いた電解液種類と上記陽極酸化皮
膜の厚さを表5に示す。上記試験片を用いて実施例1と
同様の方法によりガス腐食試験およびプラズマ照射試験
を行い耐ガス腐食性および耐プラズマ性を調べた。結果
は表5に示す。 Example 5 Using various Al alloy plates shown in Table 5, anodic oxide coatings having various structures shown in Table 5 were formed into test pieces. In addition, the change in the structure of the porous layer is represented by the pore diameter, and the type of electrolyte used for the anodizing treatment and the thickness of the anodized film are shown in Table 5. Using the above test piece, a gas corrosion test and a plasma irradiation test were conducted in the same manner as in Example 1 to examine gas corrosion resistance and plasma resistance. The results are shown in Table 5.
【0070】[0070]
【表5】 [Table 5]
【0071】本発明例No.1〜5は、ポーラス層が2
層以上積層されており、しかも各ポーラス層のポア径は
連続的に変化している。表5の結果から明らかな様に、
いずれも優れた耐ガス腐食性および耐プラズマ性を示し
た。一方No.6〜8は、本発明に係る条件のいずれか
を満足しない比較例であり、耐ガス腐食性または耐プラ
ズマ性の少なくとも一方が不充分である。Inventive Example No. 1 to 5 has 2 porous layers
More than one layer is laminated, and the pore diameter of each porous layer continuously changes. As is clear from the results in Table 5,
All showed excellent gas corrosion resistance and plasma resistance. On the other hand, No. Nos. 6 to 8 are comparative examples that do not satisfy any of the conditions according to the present invention, and at least one of gas corrosion resistance and plasma resistance is insufficient.
【0072】実施例6 しゅう酸溶液を電解液とし表6に示す各種Al合金板を
用いて、表6に併記する種々の構造を有する陽極酸化皮
膜を形成して試験片とした。尚、ポーラス層の構造の変
化をポア径で表すと共に、上記陽極酸化皮膜の厚さを表
6に示す。上記試験片を用いて、実施例4と同様にして
ガス腐食試験およびプラズマ照射試験を行い耐ガス腐食
性および耐プラズマ性を調べた。結果は表6に示す。 Example 6 Using an oxalic acid solution as an electrolytic solution and using various Al alloy plates shown in Table 6, anodic oxide films having various structures shown in Table 6 were formed to obtain test pieces. The changes in the structure of the porous layer are represented by the pore diameter, and the thickness of the anodized film is shown in Table 6. Using the above test piece, a gas corrosion test and a plasma irradiation test were performed in the same manner as in Example 4 to examine gas corrosion resistance and plasma resistance. The results are shown in Table 6.
【0073】[0073]
【表6】 [Table 6]
【0074】本発明例No.1〜5は、ポーラス層が2
層以上積層され、しかも各ポーラス層のポア径は連続的
に変化している。表6の結果から明らかな様に、いずれ
も優れた耐ガス腐食性および耐プラズマ性を示した。一
方No.6〜9は、本発明に係る条件のいずれかを満足
しない比較例であり、耐ガス腐食性または耐プラズマ性
の少なくとも一方が不充分である。Inventive Example No. 1 to 5 has 2 porous layers
More than one layer is laminated, and the pore diameter of each porous layer continuously changes. As is clear from the results in Table 6, all exhibited excellent gas corrosion resistance and plasma resistance. On the other hand, No. Nos. 6 to 9 are comparative examples which do not satisfy any of the conditions according to the present invention, and at least one of gas corrosion resistance and plasma resistance is insufficient.
【0075】実施例7 表7に示す各種Al合金板を用いて、表7に併記する種
々の構造を有する陽極酸化皮膜を形成して試験片とし
た。尚、陽極酸化皮膜の構造としてポーラス層の層数、
各ポーラス層の表面側および基材側のポア径、陽極酸化
処理に用いた電解液種類と上記陽極酸化皮膜の厚さを表
7に示す。 Example 7 Using various Al alloy plates shown in Table 7, anodic oxide coatings having various structures shown in Table 7 were formed into test pieces. The number of porous layers as the structure of the anodized film,
Table 7 shows the pore diameters on the surface side and the base material side of each porous layer, the type of electrolytic solution used for the anodizing treatment, and the thickness of the anodized film.
【0076】上記試験片のハロゲン系ガスに対する耐食
性を評価することを目的として、10%Cl2 −Ar混
合ガスにより、350℃で4時間のガス腐食試験を行
い、試験後の外観を調べて以下の基準で評価した。 [ガス腐食試験] ◎: 腐食発生なし ○: 腐食発生面積率 5%未満 △: 腐食発生面積率 5%以上 10%未満 ×: 腐食発生面積率 10%以上For the purpose of evaluating the corrosion resistance of the above-mentioned test piece to halogen-based gas, a gas corrosion test was carried out with a 10% Cl 2 -Ar mixed gas at 350 ° C. for 4 hours, and the appearance after the test was examined. It evaluated by the standard of. [Gas Corrosion Test] ◎: No corrosion occurrence ○: Corrosion occurrence area ratio less than 5% △: Corrosion occurrence area ratio 5% or more and less than 10% ×: Corrosion occurrence area ratio 10% or more
【0077】また、前記試験片の耐プラズマ性を評価す
るため、低バイアス条件下で120分間の塩素プラズマ
照射試験を行い、その被エッチング量を測定して、以下
の様に評価した。 [プラズマ照射試験] ◎: 被エッチング量 1.5μm未満 ○: 被エッチング量 1.5μm以上 2μm未満 △: 被エッチング量 2μm以上 5μm未満 ×: 被エッチング量 5μm以上 上記ガス腐食試験およびプラズマ照射試験の結果は表7
に示す。Further, in order to evaluate the plasma resistance of the test piece, a chlorine plasma irradiation test was performed for 120 minutes under a low bias condition, and the amount of etching was measured, and evaluated as follows. [Plasma irradiation test] ◎: Etching amount less than 1.5 μm ○: Etching amount 1.5 μm or more and less than 2 μm Δ: Etching amount 2 μm or more and less than 5 μm ×: Etching amount 5 μm or more of the above gas corrosion test and plasma irradiation test The results are shown in Table 7.
Shown in
【0078】[0078]
【表7】 [Table 7]
【0079】表7の結果から明らかな様に、本発明に係
る条件を満足するNo.1〜9は、優れた耐ガス腐食性
および耐プラズマ性を示した。一方No.10〜13
は、本発明に係る条件のいずれかを満足しない比較例で
あり、耐ガス腐食性または耐プラズマ性の少なくとも一
方が不充分である。As is clear from the results shown in Table 7, No. 1 which satisfies the conditions according to the present invention. Nos. 1 to 9 showed excellent gas corrosion resistance and plasma resistance. On the other hand, No. 10-13
Is a comparative example that does not satisfy any of the conditions according to the present invention, and at least one of gas corrosion resistance and plasma resistance is insufficient.
【0080】実施例8 表8に示す各種Al合金板を用いて、表8に併記する種
々の構造を有する陽極酸化皮膜を形成して試験片とし
た。尚、陽極酸化皮膜の構造の変化はポア径で表すと共
に、陽極酸化処理に用いた電解液種類と上記陽極酸化皮
膜の厚さを表8に示す。 Example 8 Using various Al alloy plates shown in Table 8, anodic oxide coatings having various structures shown in Table 8 were formed into test pieces. The change in structure of the anodized film is represented by the pore diameter, and Table 8 shows the type of electrolyte used for the anodizing treatment and the thickness of the anodized film.
【0081】上記試験片を用いて、ガス腐食試験の条件
を350℃で5時間とし、また塩素プラズマ照射試験の
照射時間を150分間とした以外は、実施例7と同様に
してガス腐食試験およびプラズマ照射試験を行い耐ガス
腐食性および耐プラズマ性を調べた。結果は表8に示
す。Using the above test piece, the gas corrosion test and the gas corrosion test were conducted in the same manner as in Example 7 except that the conditions of the gas corrosion test were 350 ° C. for 5 hours and the irradiation time of the chlorine plasma irradiation test was 150 minutes. A plasma irradiation test was conducted to examine gas corrosion resistance and plasma resistance. The results are shown in Table 8.
【0082】[0082]
【表8】 [Table 8]
【0083】表8の結果から明らかな様に、本発明に係
る条件を満足するNo.1〜7は、優れた耐ガス腐食性
および耐プラズマ性を示した。一方No.8〜11は、
本発明に係る条件のいずれかを満足しない比較例であ
り、耐ガス腐食性または耐プラズマ性の少なくとも一方
が不充分である。As is clear from the results shown in Table 8, No. 1 satisfying the conditions according to the present invention. Nos. 1 to 7 showed excellent gas corrosion resistance and plasma resistance. On the other hand, No. 8-11 are
It is a comparative example that does not satisfy any of the conditions according to the present invention, and at least one of gas corrosion resistance and plasma resistance is insufficient.
【0084】実施例9 表9に示す各種Al合金板を用いて、表9に併記する種
々の構造を有する陽極酸化皮膜を形成して試験片とし
た。尚、陽極酸化皮膜の構造の変化はポア径で表すと共
に、陽極酸化処理に用いた電解液種類と上記陽極酸化皮
膜の厚さを表9に示す。 Example 9 Using various Al alloy plates shown in Table 9, anodic oxide films having various structures shown in Table 9 were formed into test pieces. The change in the structure of the anodized film is represented by the pore size, and Table 9 shows the type of electrolyte used for the anodizing treatment and the thickness of the anodized film.
【0085】上記試験片を用いて、ガス腐食試験の条件
を370℃で5時間とし、また塩素プラズマ照射試験の
照射時間を180分間とした以外は、実施例7と同様に
してガス腐食試験およびプラズマ照射試験を行い耐ガス
腐食性および耐プラズマ性を調べた。結果は表9に示
す。Using the above test piece, the gas corrosion test and the gas corrosion test were conducted in the same manner as in Example 7 except that the conditions of the gas corrosion test were 370 ° C. for 5 hours and the irradiation time of the chlorine plasma irradiation test was 180 minutes. A plasma irradiation test was conducted to examine gas corrosion resistance and plasma resistance. The results are shown in Table 9.
【0086】[0086]
【表9】 [Table 9]
【0087】表9の結果から明らかな様に、本発明に係
る条件を満足するNo.1〜6は、優れた耐ガス腐食性
および耐プラズマ性を示した。一方No.7〜9は、本
発明に係る条件のいずれかを満足しない比較例であり、
耐ガス腐食性または耐プラズマ性の少なくとも一方が不
充分である。As is clear from the results shown in Table 9, No. 1 which satisfies the conditions according to the present invention. Nos. 1 to 6 showed excellent gas corrosion resistance and plasma resistance. On the other hand, No. 7 to 9 are comparative examples that do not satisfy any of the conditions according to the present invention,
At least one of gas corrosion resistance and plasma resistance is insufficient.
【0088】実施例10 表10に示す各種Al合金板を用いて試験片とした。各
種Al合金はJIS規格に定められた組成範囲にあり、
大気中で溶解し、凝固速度1℃/秒で鋳造した。その
後、480℃で4時間の均質化焼鈍を施した後、熱間圧
延加工または押出し加工を施した。加工温度は圧延,押
出し共に450℃であり、圧延加工の圧下率は80%、
押出し加工の押出比は4であった。 Example 10 Various Al alloy plates shown in Table 10 were used to prepare test pieces. Various Al alloys are in the composition range specified in JIS standard,
It was melted in the air and cast at a solidification rate of 1 ° C / sec. After that, homogenization annealing was performed at 480 ° C. for 4 hours, and then hot rolling or extrusion was performed. The processing temperature is 450 ° C for both rolling and extrusion, the rolling reduction is 80%,
The extrusion ratio of the extrusion process was 4.
【0089】材料組織は断面から走査電子顕微鏡(SE
M)を用いて観察し、晶出物及び析出物の平均粒径を求
めた。また、一部の試験片については、画像解析処理に
よって体積分率を算出した。晶出物及び析出物の平均粒
径と体積分率及びその配列方向は表10に併記する。
尚、配列方向とは、上記試験片について以下の耐ガス腐
食性評価試験及び耐プラズマ性評価試験を行った最大面
積表面に対する配列方向である。From the cross section of the material structure, a scanning electron microscope (SE
M) was used to determine the average particle size of crystallized substances and precipitates. In addition, for some test pieces, the volume fraction was calculated by image analysis processing. Table 10 also shows the average particle size and volume fraction of crystallized substances and precipitates, and the arrangement direction thereof.
The arrangement direction is the arrangement direction with respect to the surface of the maximum area where the gas corrosion resistance evaluation test and the plasma resistance evaluation test described below were performed on the test piece.
【0090】耐ガス腐食性 上記試験片のハロゲン系ガスに対する耐ガス腐食性を評
価することを目的として、5%Cl2 −Ar混合ガスに
より、400℃で2時間のガス腐食試験を行い、外観状
態を調べて以下の基準で評価した。 ◎: 腐食発生 なし ○: 腐食発生 面積率10%未満 △: 腐食発生 面積率10%以上20%未満 ×: 腐食発生 面積率20%以上 耐プラズマ性 前記試験片の耐プラズマ性を評価するため、低バイアス
条件下で15分間の塩素プラズマ照射を5分間隔で6回
繰り返すプラズマ照射試験を行ない、耐ガス腐食性と同
じ基準で評価した。上記ガス腐食試験およびプラズマ照
射試験の結果は表10に示す。Gas Corrosion Resistance For the purpose of evaluating the gas corrosion resistance of the above-mentioned test piece against a halogen-based gas, a gas corrosion test was conducted at 400 ° C. for 2 hours with a 5% Cl 2 —Ar mixed gas, and the appearance was evaluated. The condition was examined and evaluated according to the following criteria. ◎: No corrosion occurrence ○: Corrosion occurrence Area ratio less than 10% △: Corrosion occurrence Area ratio 10% or more and less than 20% ×: Corrosion occurrence Area ratio 20% or more Plasma resistance To evaluate the plasma resistance of the test piece, Under a low bias condition, chlorine plasma irradiation for 15 minutes was repeated 6 times at intervals of 5 minutes to perform a plasma irradiation test, and the same criteria as the gas corrosion resistance were evaluated. The results of the above gas corrosion test and plasma irradiation test are shown in Table 10.
【0091】[0091]
【表10】 [Table 10]
【0092】表10の結果から明らかな様に、本発明に
係る条件を満足するNo.1〜16は、優れた耐ガス腐食
性および耐プラズマ性を示した。一方No.17〜27
は、本発明に係る条件のいずれかを満足しない比較例で
あり、耐ガス腐食性または耐プラズマ性の少なくとも一
方が不充分である。As is clear from the results shown in Table 10, Nos. 1 to 16 satisfying the conditions according to the present invention showed excellent gas corrosion resistance and plasma resistance. Meanwhile, No. 17-27
Is a comparative example that does not satisfy any of the conditions according to the present invention, and at least one of gas corrosion resistance and plasma resistance is insufficient.
【0093】[0093]
【発明の効果】本発明は以上の様に構成されているの
で、耐ガス腐食性および耐プラズマ性に優れたAlまた
はAl合金製真空チャンバ部材が提供できることとなっ
た。As described above, the present invention can provide an Al or Al alloy vacuum chamber member having excellent gas corrosion resistance and plasma resistance.
【図1】陽極酸化皮膜の概略構造を示す一部断面説明図
である。FIG. 1 is a partial cross-sectional explanatory view showing a schematic structure of an anodized film.
【図2】ポーラス層およびバリア層を有する陽極酸化皮
膜の断面説明図である。FIG. 2 is an explanatory cross-sectional view of an anodized film having a porous layer and a barrier layer.
【図3】3種の陽極酸化処理溶液による電解電圧と電流
密度の関係を示すグラフである。FIG. 3 is a graph showing the relationship between the electrolysis voltage and the current density of three kinds of anodizing treatment solutions.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 池田 貢基 兵庫県神戸市西区高塚台1丁目5番5号 株式会社神戸製鋼所神戸総合技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kouki Ikeda 1-5-5 Takatsukadai, Nishi-ku, Kobe-shi, Hyogo Kobe Steel Works, Ltd. Kobe Research Institute
Claims (7)
ス層とポアのないバリア層からなる陽極酸化皮膜を有
し、上記ポーラス層のポア径を表面側で小さく、基材側
で大きくしてなることを特徴とするAlまたはAl合金
製真空チャンバ部材。1. An anodized film comprising a porous layer having a large number of pores open on the surface and a barrier layer having no pores, wherein the pore diameter of the porous layer is small on the surface side and large on the substrate side. A vacuum chamber member made of Al or Al alloy, characterized in that
間で連続的変化部を有している請求項1に記載のAlま
たはAl合金製真空チャンバ部材。2. The vacuum chamber member made of Al or Al alloy according to claim 1, wherein the pore diameter of the porous layer has a continuously changing portion in an arbitrary section in the depth direction.
間で非連続的変化部を有している請求項1または2に記
載のAlまたはAl合金製真空チャンバ部材。3. The vacuum chamber member made of Al or Al alloy according to claim 1, wherein the pore diameter of the porous layer has a discontinuous change portion in an arbitrary section in the depth direction.
間で非変化部を有している請求項2または3に記載のA
lまたはAl合金製真空チャンバ部材。4. The A according to claim 2, wherein the pore diameter of the porous layer has a non-change portion in an arbitrary section in the depth direction.
1 or Al alloy vacuum chamber member.
選ばれる2種以上の元素を、陽極酸化皮膜に含有する請
求項1〜4のいずれかに記載のAlまたはAl合金製真
空チャンバ部材。5. The Al or Al alloy according to claim 1, wherein the anodic oxide coating contains two or more elements selected from the group consisting of C, S, N, P, F and B. Made vacuum chamber member.
10μm以下である請求項1〜5のいずれかに記載のA
l合金製真空チャンバ部材。6. The A according to claim 1, wherein an average particle diameter of crystallized substances and precipitates in the base material is 10 μm or less.
1 alloy vacuum chamber member.
中最大面積を有する部材表面に対して平行に配列されて
なる請求項1〜6のいずれかに記載のAl合金製真空チ
ャンバ部材。7. The aluminum alloy vacuum according to claim 1, wherein the crystallized substances and precipitates in the base material are arranged in parallel with the surface of the member having the largest area on the surface of the member. Chamber member.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6823295A JP2900822B2 (en) | 1994-11-16 | 1995-03-27 | Al or Al alloy vacuum chamber member |
| TW084111487A TW343238B (en) | 1994-11-16 | 1995-10-30 | Aluminum or aluminum alloy member for vacuum chamber, method of processing the surface of the member and material for the member |
| US08/836,469 US6027629A (en) | 1994-11-16 | 1995-11-06 | Vacuum chamber made of aluminum or its alloys, and surface treatment and material for the vacuum chamber |
| KR1019970703292A KR100473691B1 (en) | 1994-11-16 | 1995-11-06 | Vacuum chamber made of aluminum or its alloy |
| DE69522954T DE69522954T2 (en) | 1994-11-16 | 1995-11-06 | VACUUM CHAMBER MADE OF ALUMINUM OR ITS ALLOYS |
| EP95936105A EP0792951B1 (en) | 1994-11-16 | 1995-11-06 | Vacuum chamber made of aluminum or its alloys |
| PCT/JP1995/002263 WO1996015295A1 (en) | 1994-11-16 | 1995-11-06 | Vacuum chamber made of aluminum or its alloy, and surface treatment and material for the vacuum chamber |
| KR10-2004-7013903A KR100482862B1 (en) | 1994-11-16 | 1995-11-06 | Surface treatment for vacuum chamber made of aluminum or its alloy |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28231394 | 1994-11-16 | ||
| JP6-282313 | 1994-11-16 | ||
| JP6823295A JP2900822B2 (en) | 1994-11-16 | 1995-03-27 | Al or Al alloy vacuum chamber member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08193295A true JPH08193295A (en) | 1996-07-30 |
| JP2900822B2 JP2900822B2 (en) | 1999-06-02 |
Family
ID=26409452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6823295A Expired - Lifetime JP2900822B2 (en) | 1994-11-16 | 1995-03-27 | Al or Al alloy vacuum chamber member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2900822B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066392A (en) * | 1997-11-14 | 2000-05-23 | Kabushiki Kaisha Kobe Seiko Sho | Al material excellent in thermal crack resistance and corrosion resistance |
| JP2000192293A (en) * | 1998-12-24 | 2000-07-11 | Aisin Seiki Co Ltd | Alumite coating |
| US6444304B1 (en) | 1998-10-09 | 2002-09-03 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Anodic oxide layer and ceramic coating for aluminum alloy excellent in resistance to gas and plasma corrosion |
| US6686053B2 (en) | 2001-07-25 | 2004-02-03 | Kabushiki Kaisha Kobe Seiko Sho | AL alloy member having excellent corrosion resistance |
| US20080105203A1 (en) * | 2006-09-28 | 2008-05-08 | Tokyo Electron Limited | Component for substrate processing apparatus and method of forming film on the component |
| JP2010209411A (en) * | 2009-03-10 | 2010-09-24 | Kobe Steel Ltd | Aluminum alloy member for semiconductor liquid crystal manufacturing apparatus |
| JP2011117042A (en) * | 2009-12-03 | 2011-06-16 | Kobe Steel Ltd | Surface treatment member |
| JP2013049903A (en) * | 2011-08-31 | 2013-03-14 | Kobe Steel Ltd | Method for manufacturing aluminum anodic oxide coating being superior in productivity and having high voltage endurance |
| KR20170139456A (en) * | 2016-06-08 | 2017-12-19 | 한국과학기술원 | Anti-corrosive metal having oxide layer and method for preparing the same |
| US9850590B2 (en) | 2012-09-26 | 2017-12-26 | Kobe Steel, Ltd. | Anodized aluminum film |
| JP2020007643A (en) * | 2013-11-13 | 2020-01-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | High-purity metal topcoat for semiconductor manufacturing components |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4168066B2 (en) | 2006-08-11 | 2008-10-22 | 株式会社神戸製鋼所 | Aluminum alloy for anodizing treatment used in plasma processing apparatus and manufacturing method thereof, aluminum alloy member having anodized film, and plasma processing apparatus |
-
1995
- 1995-03-27 JP JP6823295A patent/JP2900822B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066392A (en) * | 1997-11-14 | 2000-05-23 | Kabushiki Kaisha Kobe Seiko Sho | Al material excellent in thermal crack resistance and corrosion resistance |
| US6444304B1 (en) | 1998-10-09 | 2002-09-03 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Anodic oxide layer and ceramic coating for aluminum alloy excellent in resistance to gas and plasma corrosion |
| JP2000192293A (en) * | 1998-12-24 | 2000-07-11 | Aisin Seiki Co Ltd | Alumite coating |
| US6686053B2 (en) | 2001-07-25 | 2004-02-03 | Kabushiki Kaisha Kobe Seiko Sho | AL alloy member having excellent corrosion resistance |
| US20080105203A1 (en) * | 2006-09-28 | 2008-05-08 | Tokyo Electron Limited | Component for substrate processing apparatus and method of forming film on the component |
| JP2010209411A (en) * | 2009-03-10 | 2010-09-24 | Kobe Steel Ltd | Aluminum alloy member for semiconductor liquid crystal manufacturing apparatus |
| JP2011117042A (en) * | 2009-12-03 | 2011-06-16 | Kobe Steel Ltd | Surface treatment member |
| JP2013049903A (en) * | 2011-08-31 | 2013-03-14 | Kobe Steel Ltd | Method for manufacturing aluminum anodic oxide coating being superior in productivity and having high voltage endurance |
| US9850590B2 (en) | 2012-09-26 | 2017-12-26 | Kobe Steel, Ltd. | Anodized aluminum film |
| JP2020007643A (en) * | 2013-11-13 | 2020-01-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | High-purity metal topcoat for semiconductor manufacturing components |
| KR20170139456A (en) * | 2016-06-08 | 2017-12-19 | 한국과학기술원 | Anti-corrosive metal having oxide layer and method for preparing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2900822B2 (en) | 1999-06-02 |
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