JPH08206960A - Polishing tool and its manufacture - Google Patents
Polishing tool and its manufactureInfo
- Publication number
- JPH08206960A JPH08206960A JP1625695A JP1625695A JPH08206960A JP H08206960 A JPH08206960 A JP H08206960A JP 1625695 A JP1625695 A JP 1625695A JP 1625695 A JP1625695 A JP 1625695A JP H08206960 A JPH08206960 A JP H08206960A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing tool
- base material
- diamond coating
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 71
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 41
- 239000010432 diamond Substances 0.000 claims abstract description 41
- 238000000576 coating method Methods 0.000 claims abstract description 32
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 230000003746 surface roughness Effects 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052702 rhenium Inorganic materials 0.000 claims description 5
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 5
- -1 platinum group metals Chemical class 0.000 claims description 4
- 238000007788 roughening Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 22
- 239000006061 abrasive grain Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 2
- 239000002585 base Substances 0.000 description 17
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 235000019592 roughness Nutrition 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910001315 Tool steel Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、新規な研磨工具及び
その製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel polishing tool and its manufacturing method.
【0002】[0002]
【従来の技術】研磨加工は、精密、電子関連機器等の部
品加工分野において著しく重要な技術であり、一般に遊
離砥粒加工が多く採用されているが、近年、作業性のよ
さ、高い加工能率等から、固定砥粒加工の進展が急であ
る。固定砥粒加工の主な工具は、微細砥粒を用いた砥石
である。しかしながら、砥石は、その表面のツルーイン
グ性、加工時間の経過や加工量増加に伴う砥粒の脱落等
による砥石表面の経時変化の点で問題があり、また高精
度加工が平面や円筒面に対しては比較的容易に行える
が、球面や非球面などのような複雑形状面に対しては困
難となる。2. Description of the Related Art Polishing is a remarkably important technology in the field of parts processing such as precision and electronic-related equipment. In general, loose abrasive grain processing has been widely adopted, but in recent years it has been easy to work and has high processing efficiency. Therefore, the progress of fixed abrasive processing is rapid. The main tool for fixed abrasive grain processing is a grindstone using fine abrasive grains. However, the whetstone has a problem in that the truing property of the surface of the whetstone and the aging of the whetstone surface due to the removal of abrasive grains due to the passage of machining time and the amount of machining increase, etc. Can be performed relatively easily, but it becomes difficult for a surface having a complicated shape such as a spherical surface or an aspherical surface.
【0003】また、硬質炭素膜を平坦な母材上に成膜し
た研磨工具も知られており、この成膜研磨工具は砥石を
用いた平面研磨と比べて同等な精度で研磨でき、耐摩耗
性にも優れているため、砥石のように砥粒が脱落した
り、加工数量の増加に伴い工具表面の修正が必要となる
などの不都合がないという利点を有する。しかし、この
成膜研磨工具は、研磨加工により発生した切り粉を逃が
す部分がないために、この切り粉によりワーク加工面に
スクラッチが発生しやすいという問題を有する。Further, a polishing tool in which a hard carbon film is formed on a flat base material is also known, and this film-forming polishing tool can be polished with the same accuracy as that of the surface polishing using a grindstone, and is resistant to wear. Since it is also excellent in workability, there is an advantage that there are no inconveniences such as the removal of abrasive grains like a grindstone and the need to correct the tool surface as the number of machining increases. However, this film-forming polishing tool has a problem that scratches are likely to occur on the work surface due to the cutting chips because there is no portion for releasing the cutting chips generated by the polishing process.
【0004】[0004]
【発明が解決しようとする課題】本発明の目的は、この
ような事情の下、研磨の加工効率、加工面の精度を向上
でき、しかも切り粉によるワーク加工面のスクラッチの
発生が抑止された新規な研磨工具及びそれを簡単に効率
よく製造する方法を提供することにある。Under these circumstances, the object of the present invention is to improve the processing efficiency of polishing and the accuracy of the processed surface, and to suppress the occurrence of scratches on the processed surface of the work due to the cutting chips. It is to provide a new polishing tool and a method for easily and efficiently manufacturing the same.
【0005】[0005]
【課題を解決するための手段】本発明者は、前記した良
好な特性を有する研磨工具を開発するために鋭意研究を
重ねた結果、研磨工具母材の一部、または全面を、場合
により所定金属薄膜を介して表面形状が多数の微細な凹
凸を有するようにダイヤモンドで覆い、この凹凸面にお
ける凸部を研磨部、凹部を研磨加工により発生した切り
粉の逃げ部に構成することにより、その目的を達成しう
ることを見出し、この知見に基づいて本発明をなすに至
った。As a result of intensive studies to develop a polishing tool having the above-mentioned favorable characteristics, the present inventor has found that a part or the whole surface of the base material of the polishing tool may be predetermined. The surface shape through the metal thin film is covered with diamond so as to have a large number of fine irregularities, by configuring the convex portion on the irregular surface as a polishing portion, the concave portion as the escape portion of the cutting chips generated by the polishing process, The inventors have found that the object can be achieved, and have completed the present invention based on this finding.
【0006】すなわち、本発明は、研磨工具母材と、そ
の表面に部分的にあるいは全面に設けられた、場合によ
り白金族金属及びレニウムの中から選ばれた少なくとも
1種の金属の薄膜を介する、多数の微細な凹凸をもつダ
イヤモンド被膜とから成る研磨工具、及びこのものを、
研磨工具母材を一様な表面粗さに多数の微細な凹凸が形
成されるように疎面化し、場合により白金族金属及びレ
ニウムの中から選ばれた少なくとも1種の金属の薄膜
(以下、所定金属薄膜ともいう)を被覆し、次いでこの
表面にダイヤモンド被膜を形成することにより製造する
方法を提供するものである。That is, the present invention includes a polishing tool base material and a thin film of at least one metal selected from platinum group metals and rhenium, which is provided partially or entirely on the surface of the base material. , A polishing tool comprising a diamond coating having a large number of fine irregularities, and this one,
The polishing tool base material is roughened so that a large number of fine irregularities are formed with a uniform surface roughness, and a thin film of at least one metal selected from platinum group metals and rhenium (hereinafter, The present invention provides a method for producing the same by coating a predetermined metal thin film) and then forming a diamond coating on the surface.
【0007】本発明において用いられる研磨工具母材の
材質については、研磨工具あるいはその母材に通常用い
られている材質のものであれば特に制限はなく、このよ
うなものとしては、例えばシリコン、アルミニウム、ジ
ルコニア、窒化ケイ素、炭化ケイ素、アルミナ、鉄、鉄
合金、工具鋼、超硬合金などが挙げられる。工具鋼とし
ては、例えばSK、SKD、SKS、SKHなどが、ま
た超硬合金としては、例えばSF、G、Dなどが挙げら
れる。The material of the polishing tool base material used in the present invention is not particularly limited as long as it is a material normally used for the polishing tool or the base material thereof, and examples thereof include silicon, Aluminum, zirconia, silicon nitride, silicon carbide, alumina, iron, iron alloys, tool steel, cemented carbide and the like can be mentioned. Examples of the tool steel include SK, SKD, SKS, SKH, and the like, and examples of the cemented carbide include SF, G, D, and the like.
【0008】本発明の研磨工具は、換言すれば、研磨工
具母材の表面に場合により特定金属薄膜を介し、多数の
微細な凹凸をもつダイヤモンド被膜を部分的にあるいは
全面に形成させたものである。この研磨工具母材の表面
に設けられるダイヤモンド被膜については、各種成形
品、耐摩耗工具等に表面被膜として形成されるダイヤモ
ンド組成の被膜であれば特に制限はない。この成形品や
耐摩耗工具としては、例えばラップ用セグメント、精密
用砥石、研磨用工具、ラッピング用工具などが挙げられ
る。また、この被膜は砥粒の脱離の生じる砥石とは異な
り、研磨工具母材にある程度の広さで成膜しているた
め、密着力が大きく、超硬質で摩耗しにくいダイヤモン
ド組成であることと相俟って研磨性能の安定性、持続性
をもたらすものである。また、ダイヤモンド被膜は、所
定金属薄膜を介して形成されたものであってもよい。所
定金属薄膜を構成する金属としては、白金族金属又はレ
ニウムが挙げられ、白金族金属については特に制限はな
く、Pt、Ru、Ir、Rh、Pd及びOsのいずれも
用いられるが、好ましくはPt、Ru又はRhが用いら
れる。In other words, the polishing tool of the present invention is one in which a large number of diamond coatings having fine irregularities are formed partially or entirely on the surface of the base material of the polishing tool with a specific metal thin film interposed as the case may be. is there. The diamond coating provided on the surface of the base material for the polishing tool is not particularly limited as long as it is a coating of diamond composition formed as a surface coating on various molded products, wear resistant tools and the like. Examples of the molded product and the wear resistant tool include a lap segment, a precision grindstone, a polishing tool, and a lapping tool. Also, unlike the grindstone that causes desorption of abrasive grains, this coating is formed on the base material of the polishing tool with a certain size, so it has a strong adhesion, is super hard, and has a diamond composition that does not easily wear. Combined with this, it brings stability and durability of polishing performance. Further, the diamond coating may be formed via a predetermined metal thin film. Examples of the metal forming the predetermined metal thin film include a platinum group metal and rhenium. The platinum group metal is not particularly limited, and any of Pt, Ru, Ir, Rh, Pd and Os is used, but Pt is preferably used. , Ru or Rh are used.
【0009】このダイヤモンド被膜は多数の微細な凹凸
を有することが重要である。この凹凸により研磨工具の
ダイヤモンド被膜の形成された表面には砥粒をもつ砥石
に似た表面粗さがもたらされ、この凸部は研磨部、凹部
は研磨加工により発生した切り粉の逃げ部として機能す
る。It is important that the diamond coating has a large number of fine irregularities. These irregularities cause a surface roughness similar to that of a grindstone with abrasive grains on the surface of the polishing tool on which the diamond coating is formed.The convex portions are the polishing portions, and the concave portions are the escape portions of the cutting chips generated by the polishing process. Function as.
【0010】次に、本発明の研磨工具は、研磨工具母材
を、一様な表面粗さに多数の微細な凹凸が形成されるよ
うに疎面化し、場合により所定金属薄膜を被覆し、次い
でこの表面に、場合によりロースーツ膜を形成させ、ダ
イヤモンド被膜を形成することによって製造することが
できる。Next, in the polishing tool of the present invention, the polishing tool base material is surface-roughened so that a large number of fine irregularities are formed in a uniform surface roughness, and if necessary, coated with a predetermined metal thin film, Then, a low suit film may be optionally formed on this surface, and a diamond film may be formed on the surface to produce the film.
【0011】この製造法についてさらに詳しく説明する
と、疎面化は、例えば炭化ケイ素やダイヤモンドの種々
の粒径の粒子を支持物例えばプラスチックフィルムや紙
などに貼り付けた種々の粗さの研磨シートを用いる方法
でも行われるが、好ましくは研磨粉末を含有する研磨液
中で振動処理して表面に傷入れを施すことによって行わ
れる。研磨粉末としては、研磨工具母材よりも硬質であ
れば特に制限はなく、また研磨硬質母材の種類等により
好適なものも変動するが、一般的には超硬質のもの、例
えばダイヤモンド粉末等が好ましく、また研磨液を研磨
粉末とともに構成する媒体としては、研磨工具母材及び
研磨粉末に悪影響を及ぼさないものであれば特に制限は
なく、例えば水、アルコール、アセトンなどが挙げられ
る。研磨液中での振動処理としては、超音波処理を用い
るのが好ましい。This manufacturing method will be described in more detail. For surface roughening, for example, silicon carbide or diamond particles having various particle sizes are attached to a support such as a plastic film or paper, and a polishing sheet having various roughnesses is used. Although it may be carried out according to the method used, it is preferably carried out by vibrating in a polishing liquid containing a polishing powder to scratch the surface. The polishing powder is not particularly limited as long as it is harder than the polishing tool base material, and suitable ones vary depending on the type of the polishing hard base material, etc., but in general, ultra-hard ones such as diamond powder The medium for forming the polishing liquid together with the polishing powder is not particularly limited as long as it does not adversely affect the polishing tool base material and the polishing powder, and examples thereof include water, alcohol and acetone. Ultrasonic treatment is preferably used as the vibration treatment in the polishing liquid.
【0012】次いで、本発明方法においては、このよう
に疎面化された表面に、場合により所定金属薄膜を被覆
し、この表面に、場合によりロースーツ膜を形成し、ダ
イヤモンド被膜を形成する。すなわち、疎面化された表
面に直接ダイヤモンド被膜を形成してもよいし、疎面化
された表面に先ずロースーツ膜を形成し、次いでこの膜
上にダイヤモンド被膜を形成してもよいし、疎面化され
た表面に、先ず所定金属薄膜を被覆し、次いでこの薄膜
上にダイヤモンド被膜を形成してもよいし、疎面化され
た表面に、先ず所定金属薄膜を被覆し、次いでこの薄膜
上にロースーツ膜を形成したのち、この膜上にダイヤモ
ンド被膜を形成してもよい。所定金属薄膜の被覆を行う
場合には、通常スパッタリング法、イオンスパッタリン
グ法、蒸着法、イオンプレーティング法、めっき法、化
学めっき(無電解めっき)法などの被覆法が用いられ
る。Then, in the method of the present invention, the surface thus roughened is optionally coated with a predetermined metal thin film, and a low suit film is optionally formed on this surface to form a diamond coating. That is, the diamond coating may be directly formed on the roughened surface, or a low suit film may be first formed on the roughened surface, and then the diamond coating may be formed on this film. The flattened surface may be first coated with a predetermined metal thin film, and then a diamond coating may be formed on this thin film, or the roughened surface may be first coated with a predetermined metal thin film, and then this thin film is formed. A low suit film may be formed on and then a diamond film may be formed on this film. When coating a predetermined metal thin film, a coating method such as a sputtering method, an ion sputtering method, a vapor deposition method, an ion plating method, a plating method, a chemical plating (electroless plating) method is usually used.
【0013】ダイヤモンド被膜の形成法については特に
制限はなく、例えばマイクロ波プラズマCVD法、熱フ
ィラメントCVD法、直流プラズマCVD法、高周波プ
ラズマCVD法、高周波熱プラズマCVD法、ECRプ
ラズマCVD法、電子線照射CVD法、ArFレーザー
CVD法、真空紫外光併用エレクトロンビームガンCV
D法などが用いられるが、好ましくはマイクロ波プラズ
マ化学蒸着法が用いられる。The method of forming the diamond coating is not particularly limited, and examples thereof include microwave plasma CVD method, hot filament CVD method, direct current plasma CVD method, high frequency plasma CVD method, high frequency thermal plasma CVD method, ECR plasma CVD method, electron beam. Irradiation CVD method, ArF laser CVD method, vacuum ultraviolet light combined use electron beam gun CV
The D method or the like is used, but the microwave plasma chemical vapor deposition method is preferably used.
【0014】マイクロ波プラズマ化学蒸着法において、
被膜形成に炭素源としてメタンを用いる場合には、これ
は水素との混合物として用いられる。この際のメタンと
水素との混合比は容量比で1:100〜5:100の範
囲が好ましい。この水素は、気相中のメタンの水素の引
き抜き反応を行い、化学種の活性化、ダイヤモンド表面
のダングリングボンドへの結合、炭素のSP3結合の安
定化、ダイヤモンド表面の炭素‐水素結合の水素引き抜
き反応による切断、成長点のラジカル化又はイオン化、
ダイヤモンド表面におけるSP2結合のSP3結合への
再配列、ダイヤモンドと共に析出するグラファイトのよ
うなアモルファス成分の選択的なエッチング除去などを
行う。また、この水素に、酸素や水を添加したり、メタ
ンと酸素含有化合物とを併用することにより、上記のア
モルファス成分のエッチング除去を一層効果的に行わせ
ることができる。In the microwave plasma chemical vapor deposition method,
When methane is used as the carbon source for film formation, it is used as a mixture with hydrogen. At this time, the mixing ratio of methane and hydrogen is preferably in the range of 1: 100 to 5: 100 by volume. This hydrogen carries out hydrogen abstraction reaction of methane in the gas phase, activates chemical species, bonds to dangling bonds on the diamond surface, stabilizes carbon's SP 3 bonds, and carbon-hydrogen bonds on the diamond surface. Cutting by hydrogen abstraction reaction, radicalization or ionization of growing points,
Rearrangement of SP 2 bonds to SP 3 bonds on the diamond surface, selective etching removal of amorphous components such as graphite that precipitate with diamond are performed. Further, by adding oxygen or water to this hydrogen, or by using methane and an oxygen-containing compound in combination, it is possible to more effectively remove the amorphous component by etching.
【0015】ダイヤモンド被膜形成の前に、あらかじめ
ロースーツ膜を形成させる場合には、ロースーツ膜形成
は、好ましくは、アルカリ溶液中にロースーツを懸濁さ
せ、電解法や泳動電着法などにより、これを前記の疎面
化処理した研磨工具母材へ成膜することにより行われ
る。このアルカリ溶液としては水酸化アルカリ、中でも
水酸化ナトリウムのようなアルカリ金属水酸化物と、ア
ミン、中でもエチレンジアミンのような低級アルキレン
ポリアミンから成る溶液が好ましい。ロースーツとして
は、カーボンクラスターロースーツ、例えば15重量%
C60などが好ましい。このようにロースーツ膜を形成し
たのち行われるダイヤモンド被膜形成は、マイクロ波プ
ラズマ化学蒸着法によるのが好ましい。When the low suit film is formed in advance before forming the diamond film, the low suit film is preferably formed by suspending the low suit film in an alkaline solution and subjecting it to an electrolysis method or an electrophoretic deposition method. It is performed by forming a film on the polishing tool base material subjected to the surface roughening treatment. The alkaline solution is preferably a solution containing an alkali hydroxide, especially an alkali metal hydroxide such as sodium hydroxide, and an amine, especially a lower alkylene polyamine such as ethylene diamine. As a low suit, a carbon cluster low suit, for example, 15% by weight
C 60 and the like are preferable. The diamond film formation performed after forming the low suit film in this manner is preferably performed by a microwave plasma chemical vapor deposition method.
【0016】特に好適な被膜形成法は、所定の研磨工具
母材を300〜1200℃、好ましくは300〜700
℃、より好ましくは300〜500℃の範囲の温度に加
熱し、この上にメタン1〜10容量%、好ましくは2〜
8容量%を含有する水素ガスを流しながら、マイクロ波
を印加し、プラズマを発生させることによって行われ
る。この際のガス圧力は1×102〜1×104Pa、好
ましくは5×102〜5×103Pa、マイクロ波出力は
100〜1000W、好ましくは300〜500Wの範
囲で選ばれる。メタン含有水素ガスの流入時間は、1〜
25時間、好ましくは3〜10時間の範囲で選ばれる。A particularly preferred coating forming method is to use a predetermined polishing tool base material at 300 to 1200 ° C., preferably 300 to 700.
C., more preferably to a temperature in the range 300 to 500.degree. C., on which methane 1 to 10% by volume, preferably 2 to
Microwaves are applied to generate plasma while flowing hydrogen gas containing 8% by volume. The gas pressure at this time is selected in the range of 1 × 10 2 to 1 × 10 4 Pa, preferably 5 × 10 2 to 5 × 10 3 Pa, and the microwave output in the range of 100 to 1000 W, preferably 300 to 500 W. The inflow time of hydrogen gas containing methane is 1 to
It is selected in the range of 25 hours, preferably 3 to 10 hours.
【0017】[0017]
【発明の効果】本発明の研磨工具は、その表面のダイヤ
モンド被膜の凸部で研磨が行われ、凹部により研磨加工
中に発生する切り粉が排除されるので、研磨の加工効
率、加工面の精度を向上でき、砥粒を用いた研磨と同
等、あるいはそれに近い研磨効果を達成できるととも
に、ワーク加工面のスクラッチ発生を抑制しうるという
顕著な効果を奏する。また、本発明方法によれば、この
ように優れた研磨工具を簡単に効率的に製造することが
できる。In the polishing tool of the present invention, the convex portions of the diamond coating on the surface of the polishing tool are used for polishing, and the concave portions eliminate chips generated during the polishing process. It is possible to improve the accuracy, achieve a polishing effect equivalent to or similar to the polishing using abrasive grains, and to suppress the occurrence of scratches on the work surface of the workpiece. Further, according to the method of the present invention, it is possible to easily and efficiently manufacture such an excellent polishing tool.
【0018】[0018]
【実施例】次に実施例により本発明をさらに詳細に説明
するが、本発明はこれらの例によって何ら限定されるも
のではない。The present invention will be described in more detail by way of examples, which should not be construed as limiting the invention thereto.
【0019】実施例1 直径5.08mm、厚さ3mmのシリコンウエーハ平板
を研磨工具母材とし、これを、平均粒径10μmのダイ
ヤモンド粉末2gを300mlの水に分散させた研磨液
の入った容器中に入れ、容器ごと、20kHz、20W
の条件で超音波振動処理を施してシリコンウエーハ表面
に傷入れを施し、次いで、この被処理研磨工具母材の表
面にマイクロ波プラズマ化学蒸着法により表1の条件下
でダイヤモンド被膜を施した。この被膜は硬度Hv5,
000〜10,000を示し、ラマン分光分析で113
3cm-1にダイヤモンドピークと呼ばれる1500cm
-1付近にi‐カーボンの幅広のスペクトルを示す。この
ようにして表面あらさが0.08μmRaである、ダイ
ヤモンド被覆が施されたシリコンウエーハから成る固定
砥石を作製した。Example 1 A silicon wafer flat plate having a diameter of 5.08 mm and a thickness of 3 mm was used as a base material for a polishing tool, and 2 g of diamond powder having an average particle size of 10 μm was dispersed in 300 ml of water. Put in, container, 20kHz, 20W
Ultrasonic vibration treatment was performed under the conditions described above to scratch the surface of the silicon wafer, and then a diamond coating was applied to the surface of the base material of the polishing tool to be treated under the conditions of Table 1 by the microwave plasma chemical vapor deposition method. This coating has a hardness Hv5
000 to 10,000, and 113 by Raman spectroscopy
1500 cm called the diamond peak at 3 cm -1
A broad spectrum of i-carbon is shown near -1 . In this way, a fixed grindstone made of a diamond-coated silicon wafer having a surface roughness of 0.08 μmRa was produced.
【0020】[0020]
【表1】 [Table 1]
【0021】この固定砥石を回転させ、これに、シリコ
ンウエーハをワークとして用いこれを、研磨液としての
水酸化ナトリウム溶液(pH8.5)を供給しながら5
90gf/cm2の荷重条件で押し付けて研磨した。研
磨加工面は0.08μmRaの砥石と同じ粗さを示し、
固定砥石の粗さがワークに正確に転写された。この砥石
は研磨を60分間行っても最初の粗さが維持され、加工
能率に優れるものであり、固定砥石の表面粗度を調節す
ることによってそれに応じたワーク粗面が得られた。This fixed grindstone is rotated, and a silicon wafer is used as a work, and while this is supplied with a sodium hydroxide solution (pH 8.5) as a polishing liquid,
It was pressed and polished under a load condition of 90 gf / cm 2 . The polished surface shows the same roughness as the 0.08 μmRa whetstone,
The roughness of the fixed grindstone was accurately transferred to the work. This grindstone maintains the initial roughness even after polishing for 60 minutes and is excellent in processing efficiency. By adjusting the surface roughness of the fixed grindstone, a work rough surface corresponding to it was obtained.
【0022】実施例2 ワークとして、シリコンウエーハに代えてアルミニウム
(2011,2017,5056)を用いた以外は実施
例1と同様にして、実施例1と同様のダイヤモンド被覆
が施された固定砥石を作製し、研磨加工を行った。研磨
加工面の粗さは、0.08μmRaであった。Example 2 A fixed whetstone coated with diamond as in Example 1 was used in the same manner as in Example 1 except that aluminum (2011, 2017, 5056) was used in place of the silicon wafer as the work. It was produced and polished. The roughness of the polished surface was 0.08 μmRa.
【0023】実施例3 ワークとして、シリコンウエーハに代えてセラミックス
のZrO2、Si3N4又はSiC焼結体を用いた以外は
実施例1と同様にして、実施例1と同様のダイヤモンド
被覆が施された固定砥石を作製し、研磨加工を行った。
研磨加工面の粗さは、0.08μmRaであった。Example 3 A diamond coating similar to that of Example 1 was carried out in the same manner as in Example 1 except that ceramics ZrO 2 , Si 3 N 4 or SiC sintered body was used as the work piece instead of the silicon wafer. The fixed whetstone that was applied was produced and subjected to polishing.
The roughness of the polished surface was 0.08 μmRa.
【0024】実施例4 ワークとして、シリコンウエーハに代えて、13×13
×5mmの市販の超硬合金(TH10)の表面に白金を
1μm厚で化学めっきしたものを用いた以外は実施例1
と同様にして、実施例1と同様のダイヤモンド被覆が施
された固定砥石を作製し、研磨加工を行った。研磨加工
面の粗さは、0.08μmRaであった。Example 4 As a work, instead of a silicon wafer, 13 × 13
Example 1 except that platinum having a thickness of 1 μm was chemically plated on the surface of a commercially available cemented carbide (TH10) of × 5 mm was used.
In the same manner as in Example 1, a fixed whetstone coated with the same diamond as in Example 1 was produced and polished. The roughness of the polished surface was 0.08 μmRa.
Claims (6)
るいは全面に設けられた多数の微細な凹凸をもつダイヤ
モンド被膜とから成る研磨工具。1. A polishing tool comprising a polishing tool base material and a diamond coating having a large number of fine irregularities provided partially or entirely on the surface thereof.
微細な凹凸が形成されるように疎面化し、次いでこの表
面にダイヤモンド被膜を形成することを特徴とする研磨
工具の製造方法。2. A polishing tool characterized by roughening a polishing tool base material so as to form a large number of fine irregularities with a uniform surface roughness, and then forming a diamond coating on this surface. Method.
るいは全面に設けられた、白金族金属及びレニウムの中
から選ばれた少なくとも1種の金属の薄膜を介する多数
の微細な凹凸をもつダイヤモンド被膜とから成る研磨工
具。3. A polishing tool base material and a large number of fine irregularities formed on a surface thereof partially or entirely through a thin film of at least one metal selected from platinum group metals and rhenium. Polishing tool consisting of diamond coating.
微細な凹凸が形成されるように疎面化したのち、この表
面に白金族金属及びレニウムの中から選ばれた少なくと
も1種の金属の薄膜を被覆し、次いでこの薄膜の表面に
ダイヤモンド被膜を形成することを特徴とする研磨工具
の製造方法。4. A polishing tool base material is roughened so that a large number of fine irregularities are formed with a uniform surface roughness, and then at least one selected from a platinum group metal and rhenium is formed on this surface. A method of manufacturing a polishing tool, comprising coating a thin film of a metal of a seed and then forming a diamond coating on the surface of the thin film.
する研磨液中で振動処理して表面に傷入れを施すことに
よって行われる請求項2又は4記載の方法。5. The method according to claim 2, wherein the surface-roughening is performed by subjecting the polishing tool base material to vibration treatment in a polishing liquid containing polishing powder to scratch the surface.
ラズマ化学蒸着法で行われる請求項2、4又は5記載の
方法。6. The method according to claim 2, 4 or 5, wherein the diamond coating is formed by microwave plasma chemical vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1625695A JPH08206960A (en) | 1995-02-02 | 1995-02-02 | Polishing tool and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1625695A JPH08206960A (en) | 1995-02-02 | 1995-02-02 | Polishing tool and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08206960A true JPH08206960A (en) | 1996-08-13 |
Family
ID=11911492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1625695A Pending JPH08206960A (en) | 1995-02-02 | 1995-02-02 | Polishing tool and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08206960A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998014307A1 (en) * | 1996-09-30 | 1998-04-09 | Osaka Diamond Industrial Co. | Superabrasive tool and method of its manufacture |
| KR100609361B1 (en) * | 1998-03-23 | 2006-08-04 | 하시모또 히로시 | Super Grooved Chips and Super Grooved Tools |
-
1995
- 1995-02-02 JP JP1625695A patent/JPH08206960A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998014307A1 (en) * | 1996-09-30 | 1998-04-09 | Osaka Diamond Industrial Co. | Superabrasive tool and method of its manufacture |
| KR100609361B1 (en) * | 1998-03-23 | 2006-08-04 | 하시모또 히로시 | Super Grooved Chips and Super Grooved Tools |
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