JPH0821175B2 - Optical head device - Google Patents
Optical head deviceInfo
- Publication number
- JPH0821175B2 JPH0821175B2 JP1092526A JP9252689A JPH0821175B2 JP H0821175 B2 JPH0821175 B2 JP H0821175B2 JP 1092526 A JP1092526 A JP 1092526A JP 9252689 A JP9252689 A JP 9252689A JP H0821175 B2 JPH0821175 B2 JP H0821175B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- thin film
- waveguide layer
- dielectric thin
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Optical Head (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は光学的に情報を記録再生する光学式情報記
録再生装置において情報の記録・再生を行なうための光
源として用いられる光学式ヘツド装置に関する。The present invention relates to an optical head device used as a light source for recording / reproducing information in an optical information recording / reproducing device for optically recording / reproducing information. .
第2図は例えば特開昭61−296540号公報に示された従
来の光IC化された光学式ヘツド装置の概略図である。第
2図において、(1)は基板、(2)はバツフア層、
(3)は誘電体薄膜導波路層、(4)は半導体レーザ、
(5)は集光グレーテイングカプラで、誘電体薄膜導波
路層(3)上に形成され、光を誘電体薄膜導波路層
(3)外部の空間にとりだし、情報記録媒体(6)上の
一点に集光スポツト(7)を形成させたり、また情報記
録媒体(6)からの反射光を誘電体薄膜導波路層(3)
に導く作用を行う。(8)は情報記録媒体(6)上の情
報ピツト、(9)はビームスプリツタで、情報記録媒体
(6)からの反射光を進む方向の中心光軸に対して各々
所定の鋭角で対称に二分割して収束させる。(10)は光
検知器で、ビームスプリツタ(9)によつて二分割され
た光束(11)を受光するよう基板(1)に形成されてい
る。(10a)は光検知器(10)からの電気信号を外部へ
取り出すための電極である。FIG. 2 is a schematic view of a conventional optical IC integrated optical head device disclosed in, for example, Japanese Patent Laid-Open No. 61-296540. In FIG. 2, (1) is the substrate, (2) is the buffer layer,
(3) is a dielectric thin film waveguide layer, (4) is a semiconductor laser,
Reference numeral (5) is a condensing grating coupler, which is formed on the dielectric thin film waveguide layer (3) and takes out light to the space outside the dielectric thin film waveguide layer (3), and on the information recording medium (6). A light condensing spot (7) is formed at one point, and reflected light from the information recording medium (6) is reflected by a dielectric thin film waveguide layer (3).
Perform the action of leading to. (8) is an information pit on the information recording medium (6), and (9) is a beam splitter, which are symmetrical with respect to the central optical axis in the direction in which the reflected light from the information recording medium (6) travels at a predetermined acute angle. It is divided into two and converged. (10) is a photodetector, which is formed on the substrate (1) so as to receive the light beam (11) divided into two by the beam splitter (9). Reference numeral (10a) is an electrode for taking out an electric signal from the photodetector (10) to the outside.
なお、第2図に示す光学式ヘツド装置は、光IC化され
た光学式ヘツド装置の主要部(12)であり、この主要部
(12)の基板(1)上に酸化や蒸着等の手段でバツフア
層(2)を設け、さらに蒸着あるいはスパツタリング等
により誘電体薄膜導波路層(3)を形成し、集光グレー
テイングカプラ(5)、ビームスプリツタ(9)を誘電
体薄膜導波路層(3)上に設けられた別の誘電体層にフ
オトリソグラフあるいは電子ビーム描画法とプラズマエ
ツチング法等により作成する。The optical head device shown in FIG. 2 is the main part (12) of the optical head device in the form of an optical IC, and means such as oxidation or vapor deposition on the substrate (1) of this main part (12). To form a dielectric thin film waveguide layer (3) by vapor deposition or sputtering, and then a condensing grating coupler (5) and a beam splitter (9) are formed on the dielectric thin film waveguide layer. (3) It is formed on another dielectric layer provided above by a photolithography or electron beam drawing method and a plasma etching method.
次に、上記構成に基づく従来の光学式ヘツド装置の動
作について説明する。半導体レーザ(4)から出射した
光束は誘電体薄膜導波路層(3)内に注入導波され、集
光グレーテイングカプラ(5)にて誘電体薄膜導波路層
(3)外に取り出されて情報記録媒体(6)上に集光ス
ポツト(7)として集光される。この集光スポツト
(7)で情報ピツト(8)の形成もしくは検出すること
によつて、情報の記録または再生が行なわれる。情報記
録媒体(6)からの反射光は、集光グレーテイングカプ
ラ(5)およびビームスプリツタ(9)を経て誘電体薄
膜導波路層(3)を導波し、光検知器(10)で受光され
て電気信号に変換される。この電気信号は電極(10a)
から図示していない外部の電気回路系へ送られ、再生信
号および集光スポツト(7)を情報記録媒体(6)上の
情報ピツト(8)に正しくフオーカシングとトラツキン
グを行なわせるための制御信号が検出される。Next, the operation of the conventional optical head device based on the above configuration will be described. The luminous flux emitted from the semiconductor laser (4) is injected and guided into the dielectric thin film waveguide layer (3), and is extracted outside the dielectric thin film waveguide layer (3) by the condensing grating coupler (5). The light is collected as a light collecting spot (7) on the information recording medium (6). Information is recorded or reproduced by forming or detecting the information spot (8) by the light-condensing spot (7). The reflected light from the information recording medium (6) is guided through the dielectric thin film waveguide layer (3) through the condensing grating coupler (5) and the beam splitter (9), and is reflected by the photodetector (10). The light is received and converted into an electric signal. This electrical signal is the electrode (10a)
From the external electric circuit system (not shown), and a control signal for causing the information signal (8) on the information recording medium (6) to properly focus and track the reproduction signal and the focusing spot (7). To be detected.
従来の光学式ヘツド装置は以上のように構成されてい
るので、以下に述べるような問題点があつた。これを第
3図を用いて説明する。第3図は従来例における問題点
を示すための概略図であり、符号(1)〜(12)は第2
図のものと同じものである。(13)は半導体レーザ
(4)の後方出射光(14)を受光するように配置された
モニタ用光検知器であり、モニタ用光検知器(13)の出
力信号は半導体レーザ駆動回路(15)に接続されてい
る。半導体レーザ駆動回路(15)は半導体レーザ(4)
の後方出射光(14)を受光したモニタ用光検知器(13)
の出力信号に基づいて、半導体レーザ(4)が所定の光
出力で発光しているかどうかを判定し、所定の光出力で
発光するように半導体レーザ(4)の駆動電流Iを供給
する。Since the conventional optical head device is configured as described above, it has the following problems. This will be described with reference to FIG. FIG. 3 is a schematic diagram showing the problems in the conventional example, and the reference numerals (1) to (12) are the second.
It is the same as the one in the figure. Reference numeral (13) is a monitor photodetector arranged so as to receive the backward emission light (14) of the semiconductor laser (4), and the output signal of the monitor photodetector (13) is a semiconductor laser drive circuit (15). )It is connected to the. The semiconductor laser drive circuit (15) is a semiconductor laser (4)
Monitor photodetector (13) that received the rearward emission light (14)
It is determined whether the semiconductor laser (4) is emitting light with a predetermined light output based on the output signal of (1), and a drive current I of the semiconductor laser (4) is supplied so as to emit light with a predetermined light output.
通常、半導体レーザ(4)の光出力を制御するために
以上に述べたように構成するのが一般的であるが、光IC
化された光学式ヘツド装置の主要部(12)とは別にモニ
タ用光検知器(13)が必要となり、しかも半導体レーザ
(4)の後方出射光(14)を効率よく受光できる位置に
調整配置しなければならず、各種光学素子を一体形成す
ることができる光IC化の長所を十分に生かしていなかつ
た。Usually, the structure as described above is generally used to control the optical output of the semiconductor laser (4).
In addition to the main part (12) of the integrated optical head device, a monitor photodetector (13) is required, and the rearranged light (14) of the semiconductor laser (4) can be efficiently adjusted and arranged at a position where it can be received efficiently. However, it has not been able to fully utilize the merit of making an optical IC that can integrally form various optical elements.
この発明は上記のような問題点を解消するためになさ
れたもので、光IC化された光学式ヘツド装置の主要部に
おいて、光源である半導体レーザの光出力を検出するモ
ニタ用光検知器を一体に形成した光学式ヘツド装置を得
ることを目的とする。The present invention has been made to solve the above problems, and in a main part of an optical head device having an optical IC, a monitor photodetector for detecting the optical output of a semiconductor laser which is a light source is provided. An object is to obtain an integrally formed optical head device.
この発明に係る光学式ヘツド装置は、主要部において
集光グレーテイングカプラの誘電体薄膜導波路層を含む
基板の一部に凹部を設け、この凹部内に半導体レーザを
収容固定すると共に、その後方で誘電体薄膜導波路層に
形成したモニタ用光検知器と、このモニタ用光検知器か
らの出力信号に基づいて半導体レーザを駆動するための
電流を注入する電気回路とを備えた点を特徴とする。In the optical head device according to the present invention, a concave portion is provided in a part of a substrate including a dielectric thin film waveguide layer of a condensing grating coupler in a main portion, a semiconductor laser is accommodated and fixed in the concave portion, and a rear portion thereof is provided. And a photodetector for monitoring formed in the dielectric thin film waveguide layer, and an electric circuit for injecting a current for driving a semiconductor laser based on an output signal from the photodetector for monitoring. And
この発明におけるモニタ用光検知器は、光源である半
導体レーザの後方出射光を効率よく検出することができ
る。The monitor photodetector according to the present invention can efficiently detect the backward emission light of the semiconductor laser that is the light source.
以下、この発明の一実施例を図について説明する。第
1図はこの実施例の光IC化された光学式ヘツド装置の概
略図である。図において、符号(1)〜(12)および符
号(14),(15)は従来例の第2図、第3図と同一、ま
たは相当するものであるが、特に集光グレーテイングカ
プラ(5)の誘電体薄膜導波路層(3)内における集光
点の位置より後方側には、半導体レーザ(4)の形状
(幅および長さ)よりもやや大きく、かつ半導体レーザ
(4)の後方出射光(14)が効率よく誘電体薄膜導波路
層(3)内に注入導波されるような深さの凹部(16)が
設けられており、半導体レーザ(4)はこの凹部(16)
に位置が調整されて固定される。半導体レーザ(4)の
後方出射光(14)の方向の基板(1)上には、モニタ用
光検知器(17)が作りつけられている。(17a)はモニ
タ用光検知器(17)からの電気信号を外部へ取り出すた
めの電極であり、半導体レーザ駆動回路(15)に接続さ
れている。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram of an optical head device in the form of an optical IC according to this embodiment. In the figure, reference numerals (1) to (12) and reference numerals (14) and (15) are the same as or correspond to those in FIGS. 2 and 3 of the conventional example, but in particular, a condensing grating coupler (5 ), Which is slightly larger than the shape (width and length) of the semiconductor laser (4) behind the position of the condensing point in the dielectric thin film waveguide layer (3), and behind the semiconductor laser (4). The semiconductor laser (4) is provided with a recess (16) having a depth such that the emitted light (14) can be efficiently injected and guided in the dielectric thin film waveguide layer (3).
The position is adjusted and fixed. On the substrate (1) in the direction of the backward emission light (14) of the semiconductor laser (4), a photodetector (17) for monitoring is built. Reference numeral (17a) is an electrode for taking out an electric signal from the photodetector for monitoring (17) to the outside, and is connected to the semiconductor laser drive circuit (15).
次に、この一実施例における動作を説明する。半導体
レーザ(4)を出射した光束が集光グレーテイングカプ
ラ(5)によつて情報記録媒体面(6)上で集光され、
さらにこの反射光束が光検知器(10)で受光検出される
点に関しては従来例と同様である。半導体レーザ(4)
の後方出射光(14)は、基板(1)に作りつけられたモ
ニタ用光検知器(17)で受光検出され、半導体レーザ駆
動回路(15)で半導体レーザ(4)が所定の光出力で発
光しているかどうかが判定される。そして、所定の光出
力で発光するように半導体レーザ(4)の駆動電流Iが
供給される。Next, the operation of this embodiment will be described. The light flux emitted from the semiconductor laser (4) is focused on the information recording medium surface (6) by the focusing grating coupler (5),
Further, the point that this reflected light flux is received and detected by the photodetector (10) is the same as in the conventional example. Semiconductor laser (4)
The rear emission light (14) is detected by the photodetector (17) for monitoring built into the substrate (1), and the semiconductor laser drive circuit (15) causes the semiconductor laser (4) to output a predetermined light output. It is determined whether or not it is emitting light. Then, the drive current I of the semiconductor laser (4) is supplied so as to emit light with a predetermined light output.
以上のようにこの発明に係る光学式ヘツド装置は、半
導体レーザからの後方出射光を効率よく受光するよう
に、光IC化された基板の誘電体薄膜導波路層にモニタ用
光検知器を作りつけると共に、モニタ用光検知器からの
出力信号に基づいて半導体レーザに電流を注入するよう
にしたので、外部の光検知器を必要とすることなく半導
体レーザの光出力を検出して所定値に保持することがで
き、各種光学素子を一体形成することができる光IC化の
長所を十分に生かし、安価で生産性に富む光学式ヘツド
が得られる効果がある。As described above, in the optical head device according to the present invention, a photodetector for monitoring is formed in the dielectric thin film waveguide layer of the substrate that is made into an optical IC so as to efficiently receive the backward emission light from the semiconductor laser. In addition, the current is injected into the semiconductor laser based on the output signal from the photodetector for monitoring, so the optical output of the semiconductor laser can be detected and set to a predetermined value without the need for an external photodetector. There is an effect that an optical head that can be held and that various optical elements can be integrally formed is fully utilized, and an inexpensive optical head with high productivity can be obtained.
第1図はこの発明の一実施例による光学式ヘツド装置を
示す斜視図、第2図、第3図は従来の光学式ヘツド装置
を示す斜視図である。 (1)……基板、(3)……誘電体薄膜導波路層、
(4)……半導体レーザ、(5)……集光グレーテイン
グカプラ、(9)……ビームスプリツタ、(10)……光
検知器、(12)……光学式ヘツドの主要部、(14)……
後方出射光、(17)……モニタ用光検知器。 なお、各図中、同一符号は同一または相当部分を示す。FIG. 1 is a perspective view showing an optical head device according to an embodiment of the present invention, and FIGS. 2 and 3 are perspective views showing a conventional optical head device. (1) ... substrate, (3) ... dielectric thin film waveguide layer,
(4) ... Semiconductor laser, (5) ... Condensing grating coupler, (9) ... Beam splitter, (10) ... Photodetector, (12) ... Main part of optical head, ( 14)……
Back-emitted light, (17) …… Monitor photodetector. In each drawing, the same reference numerals indicate the same or corresponding parts.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小池 学 京都府長岡京市馬場図所1番地 三菱電機 株式会社電子商品開発研究所内 (72)発明者 河野 慶三 京都府長岡京市馬場図所1番地 三菱電機 株式会社電子商品開発研究所内 (56)参考文献 特開 昭62−259241(JP,A) 特開 昭63−102053(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Manabu Koike 1st Baba Institute, Nagaokakyo City, Kyoto Prefecture Electronic Product Development Laboratory, Mitsubishi Electric Corporation (72) Inventor Keizo Kono 1st Baba Institute, Nagaokakyo Kyoto Prefecture Mitsubishi Electric (56) References JP-A-62-259241 (JP, A) JP-A-63-102053 (JP, A)
Claims (1)
板と、この基板表面の一部に形成された凹部に収容固定
され、前記誘電体薄膜導波路層にレーザ光を注入する半
導体レーザと、前記誘電体薄膜導波路層上に不等間隔曲
線群にて形成され、前記レーザ光を前記誘電体薄膜導波
路層外部の情報記録媒体面上の一点に収束させる集光グ
レーティングカプラと、前記情報記録媒体面からの反射
光を前記半導体レーザの方向とは異なる方向に偏向させ
るビームスプリッタと、前記ビームスプリッタにより偏
向された反射光を受光して電気信号に変換する光検知器
と、前記半導体レーザの後方位置で前記誘電体薄膜導波
路層に形成され前記半導体レーザの後方出射光を受光し
て電気信号に変換するモニタ用光検知器と、前記モニタ
用光検知器からの出力信号に基づいて前記半導体レーザ
を駆動するための電流を注入する電気回路手段とを備え
た光学式ヘッド装置。1. A semiconductor having a surface on which a dielectric thin film waveguide layer is formed, and a semiconductor which is housed and fixed in a recess formed in a part of the surface of the substrate and injects laser light into the dielectric thin film waveguide layer. A laser, and a focusing grating coupler formed on the dielectric thin film waveguide layer in a group of unequal-spaced curves and converging the laser light to one point on the surface of the information recording medium outside the dielectric thin film waveguide layer. A beam splitter that deflects the reflected light from the information recording medium surface in a direction different from the direction of the semiconductor laser; and a photodetector that receives the reflected light deflected by the beam splitter and converts the reflected light into an electric signal, A monitor photodetector which is formed in the dielectric thin film waveguide layer at a position rearward of the semiconductor laser and receives rear emission light of the semiconductor laser and converts it into an electric signal; and a monitor photodetector. Optical head apparatus having an electrical circuit means for injecting a current for driving the semiconductor laser based on the force signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1092526A JPH0821175B2 (en) | 1989-04-11 | 1989-04-11 | Optical head device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1092526A JPH0821175B2 (en) | 1989-04-11 | 1989-04-11 | Optical head device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02270142A JPH02270142A (en) | 1990-11-05 |
| JPH0821175B2 true JPH0821175B2 (en) | 1996-03-04 |
Family
ID=14056790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1092526A Expired - Lifetime JPH0821175B2 (en) | 1989-04-11 | 1989-04-11 | Optical head device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0821175B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0514573B1 (en) * | 1991-05-24 | 1994-07-20 | Dr. Johannes Heidenhain GmbH | Device for coupling and/or uncoupling of light beams with an integrated optical element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62259241A (en) * | 1986-05-02 | 1987-11-11 | Seiko Epson Corp | Optical pickup |
| JP2577726B2 (en) * | 1986-10-20 | 1997-02-05 | 日本電信電話株式会社 | Magneto-optical head |
-
1989
- 1989-04-11 JP JP1092526A patent/JPH0821175B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02270142A (en) | 1990-11-05 |
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| JPH10222864A (en) | Optical pickup |