JPH0821548B2 - Method for manufacturing amorphous silicon alloy film - Google Patents
Method for manufacturing amorphous silicon alloy filmInfo
- Publication number
- JPH0821548B2 JPH0821548B2 JP62055563A JP5556387A JPH0821548B2 JP H0821548 B2 JPH0821548 B2 JP H0821548B2 JP 62055563 A JP62055563 A JP 62055563A JP 5556387 A JP5556387 A JP 5556387A JP H0821548 B2 JPH0821548 B2 JP H0821548B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- film
- silicon alloy
- alloy film
- egopt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 36
- 229910045601 alloy Inorganic materials 0.000 title claims description 17
- 239000000956 alloy Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- LQJIDIOGYJAQMF-UHFFFAOYSA-N lambda2-silanylidenetin Chemical compound [Si].[Sn] LQJIDIOGYJAQMF-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は非晶質シリコンに、光学的バンドギヤップを
任意の値に調節する元素を添加し合金化した非晶質シリ
コンアロイ膜の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention is directed to the production of an amorphous silicon alloy film in which amorphous silicon is added with an element for adjusting the optical band gap to an arbitrary value and alloyed. Regarding the method.
（ロ） 従来の技術 非晶質太陽電池の用途が電卓、腕時計のような小型民
生用電子機器の電源から光太陽発電へと進むに従つて、
半導体接合も単層型から特開昭58−116779号公報の如く
積層型（タンデム型）の構造へと開発目標が拡がつてい
る。(B) Conventional technology As the use of amorphous solar cells progresses from the power source of small consumer electronic devices such as calculators and wristwatches to photovoltaic solar power generation,
As for the semiconductor junction, the development target is expanding from a single layer type to a laminated type (tandem type) structure as disclosed in Japanese Patent Laid-Open No. 58-116779.
従来、非晶質太陽電池において主として発電に寄与す
る光活性層は欠陥を形成するダングリングボンド（不対
結合手）を水素及び又はハロゲンによりターミネート
（終端）した非晶質シリコン（ａ−Si）が用いられ、就
中水素をダングリングボンドのターミネータ（終端子）
とした水素化非晶質シリコン（ａ−Si:H）により高い光
電変換特性が得られている。Conventionally, in an amorphous solar cell, a photoactive layer mainly contributing to power generation is an amorphous silicon (a-Si) obtained by terminating dangling bonds (unpaired bonds) that form defects with hydrogen and / or halogen. Is used, and hydrogen is used as a dangling bond terminator (terminator).
High photoelectric conversion characteristics are obtained by the hydrogenated amorphous silicon (a-Si: H).
一方、積層型非晶質太陽電池において、上記公開公報
に開示された如き光活性層の光学的バンドギヤップEgop
tを異ならしめる所謂マルチバンドギヤップセルが注目
され、ａ−SiのEgopt（1.75eV）を基準にバンドギヤッ
プの広い非晶質シリコンカーバイド、非晶質シリコンナ
イトライド等のワイドバンドギヤップ材料や、バンドギ
ヤップの狭い非晶質シリコンゲルマニウム、非晶質シリ
コンスズ等のナローバンドギヤップ材料として良質な非
晶質シリコンアロイの開発が急がれている。現在非晶質
シリコンアロイとして非晶質シリコンカーバイドが光活
性層ではないものの光入射側に配されるｐ型不純物層と
して実用化されている以外、未だ工業化されるに至つて
いない。これは、非晶質シリコンに光学的バンドギヤッ
プ調節用元素を添加することにより、膜のネットワーク
の低密度化及び添加元素に多数のダングリングボンドが
発生することによるものと考えられている。On the other hand, in the laminated amorphous solar cell, the optical bandgap Egop of the photoactive layer as disclosed in the above-mentioned publication is disclosed.
So-called multi-band gear up cells that differ in t have attracted attention. Wide band gearup materials such as amorphous silicon carbide and amorphous silicon nitride with wide bandgap based on a-Si Egopt (1.75eV), and bandgap materials. There is an urgent need to develop a good quality amorphous silicon alloy as a narrow band gearup material such as amorphous silicon germanium or amorphous silicon tin with a narrow gap. At present, amorphous silicon carbide has not been industrialized as an amorphous silicon alloy, except that amorphous silicon carbide is not a photoactive layer but is practically used as a p-type impurity layer arranged on the light incident side. It is considered that this is because the addition of the optical bandgap adjusting element to the amorphous silicon lowers the density of the film network and causes many dangling bonds in the added element.
（ハ） 発明が解決しようとする問題点 本発明は上述の如く非晶質シリコンアロイ膜が非晶質
シリコン膜に比してネットワークの低密度化及び添加元
素に多数のダングリングボンドが発生し膜特性が低下す
ることを解決しようとするものである。(C) Problems to be Solved by the Invention In the present invention, as described above, the amorphous silicon alloy film has a lower network density and a large number of dangling bonds in the additive element as compared with the amorphous silicon film. This is intended to solve the deterioration of film characteristics.
（ニ） 問題点を解決するための手段 本発明製造方法は上記問題点を解決すべく、少なくと
もシリコン元素及び光学的バンドギャップの調節に寄与
する元素を含む原料ガスを分解し、基板表面に光学的バ
ンドギャップがEgopt［eV］の非晶質シリコンアロイ膜
を堆積せしめる非晶質シリコンアロイ膜の製造方法であ
って、上記非晶質シリコンアロイ膜の膜形成時の基板温
度を、当該非晶質シリコンアロイ膜の光学的バンドギャ
ップEgopt［eV］に対応して、Ts＝300×（1.75−Egop
t）＋200±10なる関係をみたすTs［℃］から選択したこ
とを特徴とする。(D) Means for Solving the Problems In order to solve the above problems, the manufacturing method of the present invention decomposes a source gas containing at least a silicon element and an element that contributes to the adjustment of the optical band gap, and optically decomposes it on the substrate surface. A method of manufacturing an amorphous silicon alloy film, in which an amorphous silicon alloy film having a dynamic band gap of Egopt [eV] is deposited, wherein a substrate temperature at the time of forming the amorphous silicon alloy film is Corresponding to the optical bandgap Egopt [eV] of high quality silicon alloy film, Ts = 300 × (1.75−Egop
t) + 200 ± 10, which is selected from Ts [° C] that satisfies the relationship.
（ホ） 作用 基板温度を、成膜しようとする非晶質シリコンアロイ
膜の光学的バンドギャップEgopt［eV］に対応して、 Ts＝300×（1.75−Egopt）＋200±10 なる関係を満たすTs［℃］から選択することによって、
光学的バンドギヤップ調節用元素の移動性の向上が図
れ、斯る元素が不安定な領域に留まりダングリングボン
ドを形成することなく安定なサイトにまで移動し、結合
して、当該サイトでネットワークを構成する。(E) Action The substrate temperature is Ts = 300 × (1.75-Egopt) + 200 ± 10 corresponding to the optical bandgap Egopt [eV] of the amorphous silicon alloy film to be formed. By selecting from [℃],
The mobility of the optical bandgap adjusting element can be improved, and such an element stays in an unstable region and moves to a stable site without forming a dangling bond, and bonds to form a network at the site. Configure.
この結果、特性エネルギが小さく、膜特性の良い非晶
質シリコンアロイ膜を得ることができる。As a result, an amorphous silicon alloy film having small characteristic energy and good film characteristics can be obtained.
（ヘ） 実 施 例 第１図は本発明製造方法を説明するためのプラズマCV
D法による膜形成装置を示し、本装置自体は当業者にと
つて周知である。即ち、（１）は排気系（２）を介して
10-6Torr以下に減圧せしめられる反応容器、（３）
（４）は該反応容器（１）内に反応空間を隔てて対向配
置された一対の上部．下部電極、（５）は上記電極の内
一方の下部電極（４）上に載置され形成される膜を支持
する基板、（６）は上記基板（５）を所定の温度に加熱
保持すべく下部電極（４）に内蔵されたヒータ、（７）
は上記一対の上部．下部電極（３）（４）に高周波電力
を付与する高周波電源、（8a）（8b）（8c）は反応容器
（１）内に導入すべき原料ガスを貯蔵するガスボンベ、
（9a）（9b）（9c）は各ガスボンベ（8a）（8b）（8c）
から流出する原料ガスの流量を制御するマスフローコン
トローラである。(F) Actual Example FIG. 1 shows plasma CV for explaining the production method of the present invention.
A film forming apparatus by the D method is shown, and this apparatus itself is well known to those skilled in the art. That is, (1) passes through the exhaust system (2)
Reaction vessel that can be depressurized to 10 -6 Torr or less, (3)
(4) is a pair of upper parts which are opposed to each other with a reaction space in the reaction container (1). A lower electrode, (5) is a substrate that supports a film formed and formed on one of the lower electrodes (4), and (6) is for heating and maintaining the substrate (5) at a predetermined temperature. Heater incorporated in lower electrode (4), (7)
Is the upper part of the above pair. A high frequency power source for applying high frequency power to the lower electrodes (3) and (4), (8a), (8b) and (8c) are gas cylinders for storing the raw material gas to be introduced into the reaction vessel (1),
(9a) (9b) (9c) are gas cylinders (8a) (8b) (8c)
It is a mass flow controller that controls the flow rate of the raw material gas flowing out from.
而して、斯る装置において、原料ガスとして、SiH4を
用いてａ−Si:H膜を形成したところ、SiH4流量20cc/
分、反応圧力0.1Torr、高周波電力30W、基板温度200℃
の成膜条件で、現在非晶質太陽電池に用いられるような
暗導電率（σａ）が10-11〜10-10〔Ω-1cm-1〕、光導電
率（σph）が10-6〜10-5〔Ω-1cm-1〕と高光導電特性を
有する光学的バンドギヤップ（Egopt）が1.75〔eV〕の
ａ−Si:H膜が得られる。Then, in such an apparatus, when an a-Si: H film was formed using SiH 4 as a source gas, the SiH 4 flow rate was 20 cc /
Min, reaction pressure 0.1Torr, high frequency power 30W, substrate temperature 200 ℃
Under the film-forming conditions, the dark conductivity (σa) currently used in amorphous solar cells is 10 -11 to 10 -10 [Ω -1 cm -1 ] and the photoconductivity (σph) is 10 -6. An a-Si: H film having an optical bandgap (Egopt) of 1.75 [eV] and having a high photoconductive property of up to 10 -5 [Ω -1 cm -1 ] is obtained.
次に、上記成膜条件において、原料ガスとしてSiH4に
H2ベースの２％GeH4ガスを毎分50cc加えて、非晶質シリ
コンアロイ膜としてナロ−バンドギヤップ材料の水素化
非晶質シリコンゲルマニウム（ａ−SiGe:H）膜を形成し
た。Next, under the above film forming conditions, SiH 4 was used as a source gas.
2% GeH 4 gas based on H 2 was added at 50 cc / min to form a hydrogenated amorphous silicon germanium (a-SiGe: H) film as a narrow band gap material as an amorphous silicon alloy film.
下記第１表１項に斯るａ−SiGe:H膜の各種特性値を示
す。Table 1 below shows various characteristic values of the a-SiGe: H film.
尚、上記各種特性値において、光学的バンドギヤップ
Egoptは光吸収スペクトル（TACPLOT）から求め、暗導電
率σａ、光導電率σphの測定はalを電極として用いたギ
ヤップセル構造を用い、また特性エネルギEchは斯る構
造における光電流測定の結果を、先の光吸収スペクトル
の測定結果に外挿することにより求めた。このように、
200〔℃〕の基板温度（Ts）で形成したａ−SiGe:H膜に
あつては、Egoptが1.5（eV）とａ−Si:H膜の1.75〔eV〕
と小さい、即ち高光吸収特性をもつにも拘らず、光導電
率σphは小さく、また特性エネルギEchも大きく非常に
膜特性が悪い。 In addition, in the above various characteristic values, the optical band gap
Egopt is obtained from the light absorption spectrum (TACPLOT), dark conductivity σa and photoconductivity σph are measured using a Gyppsell structure using al as an electrode, and characteristic energy Ech is the result of photocurrent measurement in such a structure. It was determined by extrapolating to the above measurement result of the light absorption spectrum. in this way,
For an a-SiGe: H film formed at a substrate temperature (Ts) of 200 [° C], Egopt is 1.5 (eV) and a-Si: H film is 1.75 [eV].
Despite being small, that is, having high light absorption characteristics, the photoconductivity σph is small, the characteristic energy Ech is large, and the film characteristics are very poor.
そこで、上記第１表２項、３項及び４項の如く基板温
度（Ts）を、240℃、275℃及び300℃と上昇させ、その
他の成膜条件は同一としてａ−SiGe:H膜を形成したとこ
ろ、第１表の如く各種特性値を得た。第２図は、特性エ
ネルギEchを第１表の記号と対応させて描いたものであ
る。斯る特性エネルギEchは、特にａ−SiGe:H膜の欠陥
順位の一つであるテイル準位の状態を示す重要な値で、
当該Echが小さいことは膜特性が良いことを意味する。
従つて、光学的バンドギヤップ（Egopt）が1.5〔eV〕の
ａ−SiGe:H膜にあつては、基板温度（Ts）がほぼ275
〔℃〕のとき、その膜特性の最適化が図れる。Therefore, the substrate temperature (Ts) is increased to 240 ° C, 275 ° C, and 300 ° C as shown in the items 2 and 3 and 4 in Table 1 above, and the a-SiGe: H film is formed under the same other film forming conditions. When formed, various characteristic values were obtained as shown in Table 1. FIG. 2 shows the characteristic energy Ech in association with the symbols in Table 1. The characteristic energy Ech is an important value indicating the state of the tail level, which is one of the defect ranks of the a-SiGe: H film,
The small Ech means that the film characteristics are good.
Therefore, for an a-SiGe: H film with an optical bandgap (Egopt) of 1.5 [eV], the substrate temperature (Ts) is almost 275.
At [° C], the film characteristics can be optimized.
このようにａ−SiGe:H膜の膜特性が基板温度（Ts）依
存性を示す理由としては基板温度が200℃、240℃、275
℃と増加していくにつれて成膜に寄与する活性種（特に
Ge）が基板表面で安定なサイトに落ちつき、高密度なネ
ットワークを形成するためのマイグレーシヨン（移動
度）が向上するため、200℃、240℃に比べ275℃の特性
が良いと考えられ、また275℃から300℃に上げた場合
は、今度は基板温度の上げすぎのため、弱いGe−Ｈ結合
からの水素の離脱あるいはそれによる表面反応性の増加
のためにGeのマイグレーシヨンの低下が生ずるため300
℃の特性が275℃に劣ると考えられる。従つて、上述の
ごとく、ａ−SiGeネットワークの高密度化を図り、膜特
性の最適化を図る場合、クリテイカルな基板温度効果を
考慮する必要があり、さらにその基板温度Ts〔℃〕とし
ては、本実施例に示したごとくEgopt＝1.75eVでTs＝200
℃、Egopt＝1.5eVでTs＝275℃が最適であることから他
のEgopt値をもつａ−SiGe:H膜にあつても、第３図に示
すように、 Ts＝300（1.75−Egopt）＋200 で求められる基板温度を中心に±10℃の変動幅を許容す
る温度範囲に設定することにより、膜特性の最適化が図
れる。The reason why the film characteristics of the a-SiGe: H film show the dependence on the substrate temperature (Ts) is that the substrate temperature is 200 ° C, 240 ° C, 275 ° C.
Activated species that contribute to film formation (especially
Ge) settles on a stable site on the substrate surface and improves migration (mobility) for forming a high-density network, so it is thought that the characteristics at 275 ° C are better than those at 200 ° C and 240 ° C. When the temperature is raised from 275 ℃ to 300 ℃, the temperature of the substrate is raised too much, so that hydrogen desorption from the weak Ge-H bond or the increase in surface reactivity causes a decrease in Ge migration. For 300
The characteristics at ℃ are considered to be inferior to 275 ℃. Therefore, as described above, in order to increase the density of the a-SiGe network and optimize the film characteristics, it is necessary to consider the critical substrate temperature effect. Further, as the substrate temperature Ts [° C], As shown in this embodiment, Egopt = 1.75eV and Ts = 200
Cs, Egopt = 1.5eV and Ts = 275 ° C are optimal, so even for a-SiGe: H films with other Egopt values, as shown in Fig. 3, Ts = 300 (1.75-Egopt) The film characteristics can be optimized by setting a temperature range that allows a fluctuation range of ± 10 ° C around the substrate temperature required at +200.
第４図は光学的バンドギヤップ（Egopt）が1.62〔e
V〕のａ−SiGe:H膜の特性エネルギEchの測定結果を示し
たもので、基板温度（Ts）を上記式にEgopt＝1.62〔e
V〕の値を代入して算出した240℃に設定して成膜したも
のである。このように、基板温度（Ts）の最適化が図れ
ることにより光学的バンドギヤップ（Egopt）が1.62〔e
V〕のａ−SiGe:H膜として、特性エネルギEchが従来にな
い29〔meV〕と良好な膜特性を有する膜が得られた。Fig. 4 shows that the optical bandgap (Egopt) is 1.62 [e
[V] a-SiGe: H film characteristic energy Ech is shown. The substrate temperature (Ts) is expressed by the above equation as Egopt = 1.62 [e
[V] was set to 240 ° C. and the film was formed. By optimizing the substrate temperature (Ts) in this way, the optical bandgap (Egopt) is 1.62 [e
As the a-SiGe: H film of V], a film having a characteristic energy Ech of 29 [meV], which is unprecedented, and having good film characteristics was obtained.
（ト） 発明の効果 本発明製造方法は以上の説明から明らかな如く、膜形
成時の基板温度を、成膜しようとする非晶質シリコンア
ロイ膜の光学的バンドギャップEgopt［eV］に対応し
て、 Ts＝300×（1.75−Egopt）＋200±10 なる関係を満たすTs［℃］から選択することによって、
Egopt調節用元素の移動性の向上が図れ、斯る元素が不
安定なサイトに留まりダングリングボンドを形成するこ
となく安定なサイトにまで移動し結合して、当該サイト
でネットワークを構成するので、低密度ネットワークの
原因となる光学的バンドギヤップ調節用元素が減少し高
光電特性且つテイル準位の少ない良質な膜が得られる。(G) Effect of the Invention As is clear from the above description, the manufacturing method of the present invention corresponds to the substrate temperature at the time of film formation to the optical band gap Egopt [eV] of the amorphous silicon alloy film to be formed. Then, by selecting from Ts [° C.] that satisfies the relationship of Ts = 300 × (1.75-Egopt) + 200 ± 10,
Since the mobility of the Egopt controlling element can be improved, and such an element stays in an unstable site and moves to a stable site without forming a dangling bond to be bonded to form a network at the site, The optical band gap adjusting element that causes the low density network is reduced, and a high quality film having high photoelectric characteristics and a small tail level can be obtained.
第１図は本発明製造方法に用いられる膜形成装置の概念
図、第２図は非晶質シリコンゲルマニウム膜における特
性エネルギの基板温度依存性を示す特性図、第３図は光
学的バンドギヤップの基板温度依存性を示す特性図、第
４図は光学的バンドギヤップが1.62〔eV〕の非晶質シリ
コンゲルマニウム膜の特性エネルギを示す特性図、であ
る。 （１）……反応容器、（３）（４）……上部．下部電
極、（５）……基板。FIG. 1 is a conceptual diagram of a film forming apparatus used in the manufacturing method of the present invention, FIG. 2 is a characteristic diagram showing substrate temperature dependence of characteristic energy in an amorphous silicon germanium film, and FIG. 3 is an optical bandgap. FIG. 4 is a characteristic diagram showing substrate temperature dependence, and FIG. 4 is a characteristic diagram showing characteristic energy of an amorphous silicon germanium film having an optical bandgap of 1.62 [eV]. (1) …… Reaction container, (3) (4) …… Upper part. Lower electrode, (5) ... substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 樽井 久樹 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 菱川 善博 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 中嶋 行雄 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 中村 昇 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 中野 昭一 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 大西 三千年 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (72)発明者 桑野 幸徳 大阪府守口市京阪本通２丁目18番地 三洋 電機株式会社内 (56)参考文献 特開 昭60−147115（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Hisaki Tarui 2-18 Keihan Hondori, Moriguchi City, Osaka Prefecture Sanyo Electric Co., Ltd. (72) Inventor Yoshihiro Hishikawa 2-Chome Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (72) Inventor Yukio Nakajima 2-18 Keihan Hondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Noboru Nakamura 2-18-18 Keihan Hondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. ( 72) Inventor Shoichi Nakano 2-18, Keihan Hon-dori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor, Michinoshi Onishi 2-18-18 Keihan-hondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Yukinori Kuwano 2-18, Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (56) Reference JP-A-60-147115 (JP, A)
Claims (1)
ギャップの調節に寄与する元素を含む原料ガスを分解
し、基板表面に光学的バンドギャップがEgopt［eV］の
非晶質シリコンアロイ膜を堆積せしめる非晶質シリコン
アロイ膜の製造方法であって、上記非晶質シリコンアロ
イ膜の膜形成時の基板温度を、当該非晶質シリコンアロ
イ膜の光学的バンドギャップEgopt［eV］に対応して、 Ts＝300×（1.75−Egopt）＋200±10 なる関係をみたすTs［℃］から選択したことを特徴とす
る非晶質シリコンアロイ膜の製造方法。1. A source gas containing at least a silicon element and an element that contributes to the adjustment of an optical bandgap is decomposed to deposit an amorphous silicon alloy film having an optical bandgap of Egopt [eV] on a substrate surface. A method of manufacturing a crystalline silicon alloy film, wherein the substrate temperature during film formation of the amorphous silicon alloy film is Ts corresponding to an optical band gap Egopt [eV] of the amorphous silicon alloy film. = 300 × (1.75-Egopt) + 200 ± 10 A method for manufacturing an amorphous silicon alloy film, which is selected from Ts [° C.] satisfying the relationship.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62055563A JPH0821548B2 (en) | 1987-03-11 | 1987-03-11 | Method for manufacturing amorphous silicon alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62055563A JPH0821548B2 (en) | 1987-03-11 | 1987-03-11 | Method for manufacturing amorphous silicon alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63222425A JPS63222425A (en) | 1988-09-16 |
| JPH0821548B2 true JPH0821548B2 (en) | 1996-03-04 |
Family
ID=13002170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62055563A Expired - Lifetime JPH0821548B2 (en) | 1987-03-11 | 1987-03-11 | Method for manufacturing amorphous silicon alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0821548B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02122575A (en) * | 1988-10-31 | 1990-05-10 | Kyocera Corp | Photoelectric conversion device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60147115A (en) * | 1983-12-30 | 1985-08-03 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of producing electroluminescent device |
| JPS60147155A (en) * | 1984-01-11 | 1985-08-03 | Seiko Epson Corp | Cmos-ic |
-
1987
- 1987-03-11 JP JP62055563A patent/JPH0821548B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63222425A (en) | 1988-09-16 |
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