JPH08217565A - Porous electrically conductive silicon carbide sintered body, its production and use - Google Patents
Porous electrically conductive silicon carbide sintered body, its production and useInfo
- Publication number
- JPH08217565A JPH08217565A JP7020381A JP2038195A JPH08217565A JP H08217565 A JPH08217565 A JP H08217565A JP 7020381 A JP7020381 A JP 7020381A JP 2038195 A JP2038195 A JP 2038195A JP H08217565 A JPH08217565 A JP H08217565A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- sintered body
- particle size
- sic
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 48
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000002245 particle Substances 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000012298 atmosphere Substances 0.000 claims abstract description 18
- 239000011148 porous material Substances 0.000 claims abstract description 16
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 8
- 238000009826 distribution Methods 0.000 claims abstract description 8
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 230000001186 cumulative effect Effects 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000005121 nitriding Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000010000 carbonizing Methods 0.000 claims description 4
- 239000011812 mixed powder Substances 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 101100492805 Caenorhabditis elegans atm-1 gene Proteins 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 abstract description 14
- 230000003647 oxidation Effects 0.000 abstract description 13
- 239000011230 binding agent Substances 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 4
- 239000006229 carbon black Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021431 alpha silicon carbide Inorganic materials 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010419 fine particle Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000003763 carbonization Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- NFYLSJDPENHSBT-UHFFFAOYSA-N chromium(3+);lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+3].[La+3] NFYLSJDPENHSBT-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010411 cooking Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920000609 methyl cellulose Polymers 0.000 description 2
- 239000001923 methylcellulose Substances 0.000 description 2
- 235000010981 methylcellulose Nutrition 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002459 porosimetry Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Processes For Solid Components From Exhaust (AREA)
- Filtering Materials (AREA)
- Ceramic Products (AREA)
- Porous Artificial Stone Or Porous Ceramic Products (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ディーゼルエンジン等
から排出される可燃性微粒子の捕集用に用いられる多孔
質導電性炭化珪素焼結体に関するもので、更に詳しくは
補集した可燃性微粒子を、通電発熱により均一にしかも
効率的に焼却し、再生可能な導電性ディーゼルパティキ
ュレートフィルターに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a porous conductive silicon carbide sintered body used for collecting combustible fine particles discharged from a diesel engine or the like, and more particularly to collected combustible fine particles. The present invention relates to a conductive diesel particulate filter that can be regenerated by uniformly and efficiently incinerating by heat generated by energization.
【0002】[0002]
【従来の技術】ディーゼルエンジン等から排出される可
燃性微粒子を補集するフィルターは、低熱膨張性のコー
ディエライトセラミックが使用されているが、一定量の
微粒子を捕集すると圧力損失が増大するため、定期的に
焼却し再生する必要がある。フィルターの再生は、バー
ナの燃焼ガスを噴射しその燃焼熱で焼却する方法やニク
ロム線ヒータあるいは発熱金属層を組み合わせて加熱し
焼却する方法がとられている。しかし、これらの方法は
外部からフィルターを加熱するため、可燃性微粒子の燃
焼に伴い局所的な発熱と大きな温度勾配によってフィル
ターの溶損や熱応力割れが発生する問題がある。2. Description of the Related Art A filter which collects combustible fine particles discharged from a diesel engine or the like uses a cordierite ceramic having a low thermal expansion coefficient, but when a certain amount of fine particles are collected, pressure loss increases. Therefore, it is necessary to incinerate and regenerate regularly. The filter is regenerated by injecting the combustion gas of the burner and incinerating it with the combustion heat, or by incinerating it by heating in combination with a nichrome wire heater or a heating metal layer. However, since these methods heat the filter from the outside, there is a problem that melting loss and thermal stress cracking of the filter occur due to local heat generation and a large temperature gradient as the combustible particles burn.
【0003】このため補集した可燃性微粒子を均一に焼
却し、コンパクトで現状の装置を大きく変更することな
く取り付けられる自己発熱型フィルターが検討されてい
る。この方法で使用されるフィルターは、主に炭化珪
素、珪化モリブデン、炭化チタニウムあるいはランタン
クロマイトを主成分とした導電性セラミックス(特開昭
58-119317, 特開平 2-42112)を用いる技術が開示され
ている。For this reason, a self-heating type filter, which is capable of uniformly incinerating the collected combustible fine particles, and which is compact and can be attached without largely changing the existing apparatus, has been studied. The filter used in this method is mainly made of conductive ceramics containing silicon carbide, molybdenum silicide, titanium carbide or lanthanum chromite as a main component (Japanese Patent Laid-Open Publication No. Sho.
58-119317, JP-A-2-42112) is disclosed.
【0004】しかしながら、ランタンクロマイトのよう
な導電性の酸化物系セラミックスは、耐熱性が低く熱膨
張率が高いため熱応力割れが発生する問題がある。一
方、珪化モリブデン、炭化チタニウム等の導電性の非酸
化物系セラミックスはフィルター機能を付与するために
気孔率、気孔径を大きくすると容易に酸化し導電性が失
われる問題がある。また、炭化珪素セラミックは、基本
的に絶縁体であるため、所望の導電性を得るためには T
i, Zr のような周期律表IVa 族元素あるいはV,Nbのよう
なVa 族元素の炭化物、窒化物、ホウ化物を添加し、焼
結体中に連続的な導電相を形成させることによって導電
性を付与する必要がある。しかし、これら導電性物質は
多量の添加が必要で、この多量添加によって大気中など
酸素を含む雰囲気で容易に酸化を受け導電性が失われる
問題がある。However, conductive oxide ceramics such as lanthanum chromite have a problem that thermal stress cracking occurs due to their low heat resistance and high coefficient of thermal expansion. On the other hand, conductive non-oxide ceramics such as molybdenum silicide and titanium carbide have a problem that they easily oxidize and lose conductivity when the porosity and pore diameter are increased in order to impart a filter function. Further, since silicon carbide ceramic is basically an insulator, it is necessary to use T
i, the periodic table IV a-group element or V, such as Zr, carbides of V a group element such as Nb, nitrides, added boride, thereby forming a continuous conductive phase in the sintered body Therefore, it is necessary to impart conductivity. However, it is necessary to add a large amount of these electroconductive substances, and there is a problem that the electroconductivity is easily lost in an atmosphere containing oxygen such as the atmosphere due to the addition of a large amount thereof, and the electroconductivity is lost.
【0005】本発明は以上の状況に鑑がみなされたもの
であり、導電性付与物質を添加することなく導電性を向
上し優れた耐酸化性を付与させるとともに、フィルター
として最適な気孔径及び気孔率を有する多孔質導電性炭
化珪素焼結体、及びその製造方法並びにこの焼結体で構
成された導電性ディーゼルパティキュレートフィルター
の提供を目的とする。The present invention has been made in view of the above circumstances, and improves conductivity and imparts excellent oxidation resistance without adding a conductivity-imparting substance, and has a pore size and an optimum pore size as a filter. An object is to provide a porous conductive silicon carbide sintered body having a porosity, a method for producing the same, and a conductive diesel particulate filter composed of this sintered body.
【0006】[0006]
【課題を解決するための手段】すなわち、本発明の多孔
質導電性炭化珪素焼結体は、α型炭化珪素結晶粒と粒界
結合部からなる焼結体であって、該α型炭化珪素結晶粒
の含有量が20〜80体積%であり、該粒界結合部主相がβ
型炭化珪素で構成されていることを特徴とする。That is, the porous conductive silicon carbide sintered body of the present invention is a sintered body composed of α-type silicon carbide crystal grains and grain boundary bonding portions, and the α-type silicon carbide The content of crystal grains is 20 to 80% by volume, and the main phase of the grain boundary bonding part is β
Type silicon carbide.
【0007】そして、本発明の製造方法は、平均粒子径
5〜 50 μm 、粒度分布の累積粒度10% 径(D10) と50%
径(D50) の粒径比(D10/D50)が 0.2以上の炭化珪素粉末
20〜80重量% とカーボンに対する金属珪素のモル比(金
属珪素/カーボン)が 1.0〜2.0である金属珪素と炭素
物質の混合粉末 80 〜 20 重量% とを配合し成形体とし
た後、該成形体を窒素ガスを含む雰囲気中で加熱し窒化
した後、炭化することを特徴とするものである。この
際、前記、成形体を窒化し窒化珪素を生成させた後、炭
化することによって、反応生成したβ型炭化珪素がα型
炭化珪素の粒界相主相を構成することにより、導電性物
質を添加することなく導電性を向上させることができる
とともに、粒界結合力を高め粒界相が緻密化し耐酸化性
を向上させることができる。And, the production method of the present invention is
5-50 μm, cumulative particle size distribution particle size 10% diameter (D 10 ) and 50%
Diameter (D 50) of the particle size ratio (D 10 / D 50) of 0.2 or more silicon carbide powder
After forming 20 to 80% by weight and 80 to 20% by weight of a mixed powder of metallic silicon and a carbon material having a molar ratio of metallic silicon to carbon (metallic silicon / carbon) of 1.0 to 2.0 into a molded body, the molding is carried out. It is characterized in that the body is heated in an atmosphere containing nitrogen gas to be nitrided and then carbonized. At this time, the molded body is nitrided to generate silicon nitride, and then carbonized to form the reaction-produced β-type silicon carbide as a grain boundary phase main phase of the α-type silicon carbide. It is possible to improve the conductivity without adding Al, increase the grain boundary bonding force, and densify the grain boundary phase to improve the oxidation resistance.
【0008】より好ましい製造方法は、上記の成形体を
窒素ガスを含む雰囲気中で加熱し窒化した後、炭化する
工程が次の(1)及び(2)の工程からなることを特徴
とするものである。 (1)高くても 400℃の温度から 1100 ℃〜 1800 ℃の
任意の温度までをN2 分圧が 0.2 atm以上の非酸化性雰
囲気中で 600℃/hr以下の昇温速度で加熱した後、
(2)N2 分圧が 0.2 atm 未満の非酸化性雰囲気中で
600℃/hr以下の昇温速度で 1500 ℃以上でかつ(1)
の最高温度以上の温度に加熱する。A more preferable manufacturing method is characterized in that the step of heating the above-mentioned molded body in an atmosphere containing nitrogen gas for nitriding and then carbonizing comprises the following steps (1) and (2). Is. (1) After heating from a temperature of 400 ° C to an arbitrary temperature of 1100 ° C to 1800 ° C at a temperature rising rate of 600 ° C / hr or less in a non-oxidizing atmosphere with a N 2 partial pressure of 0.2 atm or more ,
(2) In non-oxidizing atmosphere with N 2 partial pressure of less than 0.2 atm
1500 ℃ or more at the heating rate of 600 ℃ / hr or less and (1)
Heat above the maximum temperature of.
【0009】さらに、出発原料であるα型炭化珪素粉末
の粒径及び配合量を適宜、設定することによって、所望
の気孔径及び気孔率を有する多孔質導電性炭化珪素焼結
体を製造することができる。Further, a porous conductive silicon carbide sintered body having a desired pore size and porosity can be manufactured by appropriately setting the particle size and the compounding amount of the α-type silicon carbide powder as a starting material. You can
【0010】以下、さらに詳しく本発明について説明す
る。The present invention will be described in more detail below.
【0011】本発明の多孔質導電性炭化珪素焼結体は、
例えば金属珪素粉末、炭素質物質及びα型炭化珪素粉末
から成る混合原料を窒化し、生成した窒化珪素をさらに
炭化することによって得られる。原料中の金属珪素を窒
化し、さらに炭化することによって、粒界部に不純物導
電相を形成し容易に 10 Ω・ cm以下の比抵抗を有する焼
結体となる。また、金属珪素粉末を用いないでも、あら
かじめ窒化されて形成された窒化珪素を配合してもよ
い。このようにして得られた炭化珪素焼結体は、α型炭
化珪素とこれを結合する粒界部からなる炭化珪素焼結体
であって、α型炭化珪素の含有量 20 〜 80 体積%であ
って、粒界部の主相がβ型炭化珪素で構成されているこ
とによって、粒界相は通常の炭化珪素の粉末焼結体と比
べると緻密化しているため、比抵抗が小さく優れた耐酸
化性を有する。また、比抵抗は10Ω・ cm以下で、10Ω・
cmより高いと導電性ディーゼルパティキュレートフィル
ターとして通電加熱を行う場合、通常、搭載される 24
V のバッテリー容量では捕集したパティキュレートを焼
却できる温度まで加熱させることが難しくなる。The porous conductive silicon carbide sintered body of the present invention comprises:
For example, it can be obtained by nitriding a mixed raw material composed of metallic silicon powder, carbonaceous material and α-type silicon carbide powder, and further carbonizing the produced silicon nitride. By nitriding metallic silicon in the raw material and further carbonizing it, an impurity conductive phase is formed at the grain boundary portion, and a sintered body having a specific resistance of 10 Ω · cm or less is easily obtained. Further, it is also possible to mix silicon nitride formed by previously nitriding, without using the metallic silicon powder. The silicon carbide sintered body thus obtained is a silicon carbide sintered body composed of α-type silicon carbide and a grain boundary part that binds the α-type silicon carbide, and the α-type silicon carbide content is 20 to 80% by volume. Since the main phase of the grain boundary portion is composed of β-type silicon carbide, the grain boundary phase is densified as compared with a normal silicon carbide powder sintered body, so that the specific resistance is small and excellent. Has oxidation resistance. In addition, the specific resistance is 10Ω ・ cm or less.
If it is higher than cm, it is usually installed when conducting electric heating as a conductive diesel particulate filter.
With a battery capacity of V, it becomes difficult to heat the collected particulates to a temperature at which they can be incinerated.
【0012】本発明の焼結体のα型炭化珪素の含有量は
20〜80体積%の範囲であるが、20体積%未満では機械的
強度が低下し、80体積%を越えると粒界相を構成するβ
型炭化珪素の量が少ないため比抵抗が高く耐酸化性が低
下する。粒界相の比抵抗と耐酸化性の変化は次の理由に
よる。すなわち、粒界相を構成するβ型炭化珪素は、窒
化珪素を経由して生成されたものであり、多量の窒素固
溶量を確保することができ低い比抵抗を備えるため、粒
界相を構成するβ型炭化珪素の量が少ないと比抵抗が高
くなり、また粒界結合部の緻密性が低下するため容易に
粒界酸化が進行し耐酸化性が低下するためである。The content of α-type silicon carbide in the sintered body of the present invention is
It is in the range of 20 to 80% by volume, but if it is less than 20% by volume, the mechanical strength is reduced, and if it exceeds 80% by volume, β constituting the grain boundary phase is formed.
Since the amount of type silicon carbide is small, the specific resistance is high and the oxidation resistance is reduced. The changes in the specific resistance and oxidation resistance of the grain boundary phase are due to the following reasons. That is, β-type silicon carbide forming the grain boundary phase is generated via silicon nitride, and can secure a large amount of solid solution of nitrogen and has a low specific resistance. This is because when the amount of β-type silicon carbide forming the composition is small, the specific resistance becomes high, and the denseness of the grain boundary joint portion is lowered, so that the grain boundary oxidation easily progresses and the oxidation resistance is lowered.
【0013】一方、本発明の多孔質導電性炭化珪素焼結
体の気孔特性は、平均気孔径 5〜40μm の範囲で、5 μ
m より小さいと、可燃性微粒子の目詰まりが顕著になり
短時間に圧力損失が大きくなる。また、気孔径が 40 μ
m を越えると、捕集効率が低下しフィルター機能が低下
する。さらに、気孔率は40%以上、好ましくは50〜80%
の範囲で、40%より低いと圧力損失が高く、80%を越え
ると機械的強度が低下する。On the other hand, the pore characteristic of the porous conductive silicon carbide sintered body of the present invention is 5 μm in the range of the average pore diameter of 5-40 μm.
When it is smaller than m, the combustible fine particles are significantly clogged and the pressure loss increases in a short time. Also, the pore size is 40 μ
When it exceeds m, the collection efficiency is lowered and the filter function is lowered. Further, the porosity is 40% or more, preferably 50-80%
In the range of, if it is lower than 40%, the pressure loss is high, and if it exceeds 80%, the mechanical strength decreases.
【0014】上記、多孔質導電性炭化珪素焼結体を得る
ための製造方法として、出発原料となるα型炭化珪素粉
末の平均粒径及び粒度分布が重要で、焼結体の気孔特性
に影響する。すなわち、出発原料となるα型炭化珪素の
平均粒径は 5〜 50 μmで、その粒度分布の累積粒度10
%径と50%径の粒径比(D10/D50)が 0.2以上必要であ
る。すなわち、平均粒径が 5μm より小さい場合、また
は、粒度分布の(D10/D5 0)がの粒径比が 0.2未満の場
合、焼結体の気孔径が小さくなる。一方、平均粒径が 5
0 μm を越えると焼結体の機械的強度が低下する。金属
珪素粉末は、通常の工業用金属珪素で十分で、平均粒径
は成形性及び炭素質物質との反応性の点から100μm 以
下が好ましい。また、炭素質物質としてはカーボンブラ
ック、アセチレンブラック等の微粒子固体カーボン粉末
の他、フェノール、フラン、ポリイミド等の熱分解し炭
素となる有機系樹脂等も使用することができる。As a manufacturing method for obtaining the above-mentioned porous conductive silicon carbide sintered body, the average particle size and particle size distribution of the α-type silicon carbide powder as a starting material are important and affect the pore characteristics of the sintered body. To do. That is, the average particle size of α-type silicon carbide, which is a starting material, is 5 to 50 μm, and the cumulative particle size of the particle size distribution is 10 μm.
The particle size ratio (D 10 / D 50 ) of% diameter and 50% diameter must be 0.2 or more. That is, when the average particle size is 5μm smaller, or the particle size ratio of the particle size distribution (D 10 / D 5 0) is of less than 0.2, the pore size of the sintered body is reduced. On the other hand, the average particle size is 5
If it exceeds 0 μm, the mechanical strength of the sintered body decreases. As the metal silicon powder, ordinary industrial metal silicon is sufficient, and the average particle size is preferably 100 μm or less in view of moldability and reactivity with carbonaceous substances. As the carbonaceous substance, fine particle solid carbon powders such as carbon black and acetylene black, as well as organic resins such as phenol, furan and polyimide, which are thermally decomposed to become carbon, can be used.
【0015】これら出発原料の配合は、α型炭化珪素粉
末20〜80重量%と金属珪素粉末と炭素質物質の混合粉80
〜20重量%とする。この時の金属珪素粉末と炭素質物質
の配合比は、カーボンに対する金属珪素のモル比が 1.0
〜2.0 の範囲にする。このモル比が 1.0より小さいと焼
結体中にカーボンが残存し、反応生成したβSiC の焼結
を阻害する。一方、2.0 より多いと残存する金属珪素が
多く機械的強度及び耐酸化性が低下する。The mixing ratio of these starting materials is 20 to 80% by weight of α-type silicon carbide powder and 80% mixed powder of metallic silicon powder and carbonaceous material.
~ 20% by weight. At this time, the mixing ratio of the metallic silicon powder and the carbonaceous material is such that the molar ratio of metallic silicon to carbon is 1.0.
It should be in the range of ~ 2.0. If this molar ratio is less than 1.0, carbon remains in the sintered body and inhibits the sintering of reaction-produced βSiC. On the other hand, if it is more than 2.0, a large amount of metallic silicon remains and the mechanical strength and oxidation resistance are reduced.
【0016】これら原料粉末の混合方法としては、乾
式、湿式混合等均一に混合できる方法であれば何れの混
合方法でも適用することが可能である。また、混合原料
の成形は、メチルセルロース、ポリビニルアルコール等
の有機バインダーを添加し、プレス成形、押出成形、射
出成形あるいはスラリーを調整し所望の形状の容器に注
入固化する方法で成形することができる。As a method of mixing these raw material powders, any mixing method such as dry type and wet type can be applied as long as they can be uniformly mixed. The mixed raw material can be molded by adding an organic binder such as methyl cellulose or polyvinyl alcohol, press molding, extrusion molding, injection molding, or by adjusting a slurry and pouring into a container having a desired shape for solidification.
【0017】次に、得られた成形体の焼成方法は、まず
(1)高くても 400℃の温度から 1100 ℃〜 1800 ℃の
任意の温度までをN2 分圧が 0.2 atm以上の非酸化性雰
囲気中で 600℃/hr以下の昇温速度で加熱する。成形体
はバインダーの種類に応じて必要に応じて脱脂するが、
脱脂は酸化雰囲気中で行う方が好ましい場合もあり、少
なくとも 400℃以上の温度ではN2 分圧が 0.2 atm以上
の非酸化性雰囲気中で加熱する必要があるが、 400℃未
満の温度では必ずしも非酸化性雰囲気中である必要はな
い。N2 分圧が0.2atm未満では金属珪素の窒化が不十分
で、炭化して得られる焼結体の比抵抗が高くなる。同様
に、昇温速度が 600℃/hr を越えると窒化が不十分で比
抵抗が高くなる。また、窒化反応の温度が1100℃未満で
は窒化反応が起こらず、1800℃を越えると生成した窒化
珪素の炭化珪素への転化が起こり、このような条件で得
られた焼結体は気孔径が小さく、耐酸化性が低下する。Next, the method of firing the obtained molded body is as follows: (1) Non-oxidation with a N 2 partial pressure of 0.2 atm or more from a temperature of at most 400 ° C. to an arbitrary temperature of 1100 ° C. to 1800 ° C. In a neutral atmosphere, heat at a heating rate of 600 ° C / hr or less. The molded body is degreased as necessary depending on the type of binder,
In some cases, it is preferable to perform degreasing in an oxidizing atmosphere. At a temperature of at least 400 ° C, it is necessary to heat in a non-oxidizing atmosphere having a N 2 partial pressure of at least 0.2 atm, but at a temperature of less than 400 ° C It need not be in a non-oxidizing atmosphere. When the N 2 partial pressure is less than 0.2 atm, nitriding of metallic silicon is insufficient and the specific resistance of the sintered body obtained by carbonization becomes high. Similarly, if the heating rate exceeds 600 ° C / hr, nitriding is insufficient and the specific resistance increases. Further, if the temperature of the nitriding reaction is less than 1100 ° C, the nitriding reaction does not occur, and if it exceeds 1800 ° C, the generated silicon nitride is converted into silicon carbide, and the sintered body obtained under such conditions has a pore diameter of It is small and the oxidation resistance is reduced.
【0018】次いで、窒化珪素の生成した成形体を
(2)N2 分圧が 0.2atm 未満の非酸化性雰囲気中で 6
00℃/hr以下の昇温速度で 1500 ℃以上でかつ(1)の
最高温度以上の温度に加熱する。好ましくは 1800 ℃以
上、より好ましくは 1900 ℃以上がよい。N2 分圧が
0.2atm 未満の非酸化性雰囲気としては、真空、又は窒
素とアルゴン、一酸化炭素、アンモニア、メタン、水素
等との混合ガスの雰囲気も可能である。この工程の温度
が1500℃あるいは(1)の工程の最高温度よりも低い温
度では炭化が不十分で窒化珪素が残存し比抵抗が高くな
る。Next, the formed body of silicon nitride was subjected to (2) N 2 partial pressure in a non-oxidizing atmosphere of less than 0.2 atm.
Heat to a temperature of 1500 ℃ or more and the maximum temperature of (1) or more at a heating rate of 00 ℃ / hr or less. The temperature is preferably 1800 ° C or higher, more preferably 1900 ° C or higher. N 2 partial pressure
The non-oxidizing atmosphere of less than 0.2 atm may be vacuum or an atmosphere of a mixed gas of nitrogen and argon, carbon monoxide, ammonia, methane, hydrogen or the like. When the temperature of this step is 1500 ° C. or lower than the maximum temperature of the step (1), carbonization is insufficient, silicon nitride remains, and the specific resistance increases.
【0019】本発明の導電性炭化珪素焼結体の用途とし
ては、気孔率が 40%以上、平均気孔径が 5〜40μm 、室
温比抵抗が 10 Ω・ cm以下の多孔質導電性炭化珪素焼結
体であることから、ディーゼルエンジンから排出される
可燃性微粒子を捕集し燃焼することのできるヒーター性
能を付加した導電性フィルターとして最適である。一
方、これらの特性はダクトヒーター、大型ドライヤーの
熱源に使用される熱風発生機用ヒーターとしても、発熱
面積を大きくし熱効率を高める点から適している。さら
に、通常の暖房機器、調理機器、乾燥機器、焼成炉等に
使用されるヒーターとしても充分に使用することが可能
である。The conductive silicon carbide sintered body of the present invention is used as a porous conductive silicon carbide sintered body having a porosity of 40% or more, an average pore diameter of 5 to 40 μm, and a room temperature specific resistance of 10 Ω · cm or less. Since it is a united body, it is optimal as a conductive filter with added heater performance capable of collecting and burning combustible fine particles discharged from a diesel engine. On the other hand, these characteristics are suitable for a duct heater and a heater for a hot air generator used as a heat source for a large-sized dryer, from the viewpoint of increasing the heating area and increasing the thermal efficiency. Further, it can be sufficiently used as a heater used for ordinary heating equipment, cooking equipment, drying equipment, firing furnace and the like.
【0020】[0020]
【実施例】以下、実施例、比較例を挙げてさらに具体的
に本発明を説明する。EXAMPLES The present invention will be described more specifically with reference to Examples and Comparative Examples.
【0021】(実施例1〜7及び比較例1〜10)出発
原料として表1記載の粒径(平均粒径、粒度分布粒径
比)の炭化珪素粉末と、工業用金属珪素粉末及びカーボ
ンブラックの混合粉末を表1に示す割合で配合した原料
100重量部に対して、さらに水20重量部、バインダーと
してメチルセルロース 8.0重量部を添加し、ヘンシェル
混合機で10分間混合し、次いでニーダ式混練機を用いて
30分混練した。得られた混練物は高圧真空押出成形機を
用いて、外径寸法□50mm、セル寸法 2.5mm、リブ圧 0.5
mmのハニカムを成形圧力 60kg/cm2 で押出成形した。得
られた成形体は、乾燥後、窒素雰囲気中、450 ℃× 1hr
の脱脂を行った後、表2に示す窒化反応欄の焼成条件で
窒化後、炭化反応欄の焼成条件で炭化させた。(Examples 1 to 7 and Comparative Examples 1 to 10) As starting materials, silicon carbide powder having a particle size (average particle size, particle size distribution particle size ratio) shown in Table 1, industrial metal silicon powder and carbon black. Raw material in which the mixed powder of
To 100 parts by weight, 20 parts by weight of water and 8.0 parts by weight of methylcellulose as a binder were further added, mixed for 10 minutes with a Henschel mixer, and then using a kneader type kneader.
Kneaded for 30 minutes. The obtained kneaded product was sized 50 mm in outer diameter, 2.5 mm in cell size and 0.5 in rib pressure using a high pressure vacuum extruder.
mm honeycomb was extruded at a forming pressure of 60 kg / cm 2 . The obtained molded product is dried and then in a nitrogen atmosphere at 450 ° C for 1 hr.
After degreasing, it was nitrided under the firing conditions in the nitriding reaction column shown in Table 2 and then carbonized under the firing conditions in the carbonization reaction column.
【0022】得られた焼結体について以下の特性を測定
し表3に示した。 (1) 気孔率:アルキメデス法。 (2) 平均気孔径: 水銀圧入法。 (3) 炭化珪素結晶相の同定:X線回折を行い以下の式に
より算出した。 α型炭化珪素含有量(体積%)=100−{β型炭化珪
素含有量(体積%)} 但し、β型炭化珪素含有量(体積%)=100/(1+
a+b) a= 4.571Ia /(100− 2.721Ia − 0.665Ib) b= 2.531Ib /(100− 2.721Ia − 0.665Ib) ここで、Ia は CuKα 2θが 34.3 °におけるピーク強
度、Ib は 34.9 °におけるピーク強度であり、 CuKα
2θ=36.5 °におけるピーク強度を 100とした場合の相
対値である。 (4) 室温比抵抗:ハニカム構造体を□10×50mm Lに切断
し、銀電極を形成し4端子法で測定した (5) 耐酸化性:大気中、温度1000℃×100 時間処理後の
比抵抗を測定した。 (6) 機械的強度:ハニカム構造体を□10×10mm Lに切断
し、押出方向における圧縮強度を測定した。The following properties of the obtained sintered body were measured and are shown in Table 3. (1) Porosity: Archimedes method. (2) Average pore size: mercury porosimetry. (3) Identification of silicon carbide crystal phase: X-ray diffraction was performed and calculated by the following formula. α-type silicon carbide content (volume%) = 100− {β-type silicon carbide content (volume%)} where β-type silicon carbide content (volume%) = 100 / (1+
a + b) a = 4.571Ia / (100−2.721Ia−0.665Ib) b = 2.531Ib / (100−2.721Ia−0.665Ib) where Ia is the peak intensity at CuKα 2θ of 34.3 ° and Ib is the peak at 34.9 °. Strength, CuKα
This is a relative value when the peak intensity at 2θ = 36.5 ° is 100. (4) Room temperature resistivity: Honeycomb structure was cut into □ 10 × 50 mm L, silver electrodes were formed and measured by the 4-terminal method. (5) Oxidation resistance: After treatment in air at a temperature of 1000 ° C for 100 hours. The specific resistance was measured. (6) Mechanical strength: The honeycomb structure was cut into □ 10 × 10 mm L, and the compressive strength in the extrusion direction was measured.
【0023】[0023]
【表1】 [Table 1]
【0024】[0024]
【表2】 [Table 2]
【0025】[0025]
【表3】 [Table 3]
【0026】表1〜3から明らかなように、実施例1〜
7で得られた導電性多孔質炭化珪素焼結体は、好適な気
孔率及び平均気孔径を有し、室温比抵抗が低く優れた導
電性を示すとともに、すぐれた圧縮強度、耐酸化性を示
した。これらの焼結体の導電性ディーゼルパーティキュ
レートフィルターとしての特性、すなわち補集効率、補
集された微粒子の加熱除去性能の評価結果は良好であ
り、ディーゼルパーティキュレートフィルターとして優
れた特性を有するものであった。As is clear from Tables 1 to 3, Examples 1 to 1
The conductive porous silicon carbide sintered body obtained in No. 7 has suitable porosity and average pore diameter, shows low conductivity at room temperature and excellent conductivity, and has excellent compressive strength and oxidation resistance. Indicated. The properties of these sintered bodies as a conductive diesel particulate filter, that is, the collection efficiency, the evaluation results of the heat removal performance of the collected particulates are good, and they have excellent properties as a diesel particulate filter. there were.
【0027】[0027]
【発明の効果】本発明の導電性炭化珪素焼結体の製造方
法によれば、導電性付与材を添加することなく、導電
性、耐酸化性に優れ、フィルターとして最適な気孔率及
び気孔径を有する多孔質導電性炭化珪素焼結体が提供さ
れる。また、本発明の多孔質導電性炭化珪素焼結体の用
途は、特に、ディーゼルエンジンから排出される微粒子
を捕集し燃焼焼却するヒーター性能を有する導電性ディ
ーゼルパティキュレートフィルターとして、さらに、発
熱面積が大きく熱効率を高められる観点から、ダクトヒ
ーター、大型ドライヤーの熱源に使用される熱風発生機
用ヒーターとして、また、暖房機器、調理機器、乾燥機
器、焼成炉等に使用されるヒーターとしても適してい
る。EFFECT OF THE INVENTION According to the method for producing a conductive silicon carbide sintered body of the present invention, the conductivity and the oxidation resistance are excellent without adding a conductivity-imparting material, and the optimum porosity and pore diameter as a filter are obtained. There is provided a porous conductive silicon carbide sintered body having: In addition, the application of the porous conductive silicon carbide sintered body of the present invention, particularly, as a conductive diesel particulate filter having a heater performance of collecting and burning incineration of fine particles discharged from a diesel engine, further, a heating area From the viewpoint that the heat efficiency is greatly increased, it is also suitable as a duct heater, a heater for a hot air generator used as a heat source for large dryers, and a heater used for heating equipment, cooking equipment, drying equipment, baking furnaces, etc. There is.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 今村 保男 福岡県大牟田市新開町1番地 電気化学工 業株式会社大牟田工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuo Imamura 1 Shinkai-cho, Omuta-shi, Fukuoka Electric Chemical Industry Co., Ltd. Omuta factory
Claims (4)
体であって、該α型炭化珪素の含有量が20〜80体積%で
あり、該粒界結合部主相がβ型炭化珪素で構成されてい
ることを特徴とする多孔質導電性炭化珪素焼結体。1. A sintered body composed of α-type silicon carbide and a grain boundary bonding part, wherein the content of the α-type silicon carbide is 20 to 80% by volume, and the main phase of the grain boundary bonding part is β type. A porous conductive silicon carbide sintered body characterized by being composed of silicon carbide.
積粒度10% 径(D10) と50% 径(D50) の粒径比(D10/D50)
が 0.2以上の炭化珪素粉末20〜80重量% とカーボンに対
する金属珪素のモル比(金属珪素/カーボン)が 1.0〜
2.0である金属珪素粉末と炭素物質の混合粉末 80 〜 2
0 重量% とを配合し成形体とした後、該成形体を窒素ガ
スを含む雰囲気中で加熱し窒化した後、炭化することを
特徴とする多孔質導電性炭化珪素焼結体の製造方法。Wherein the average particle diameter. 5 to 50 [mu] m, the particle size ratio (D 10 / D 50) of the cumulative particle size of 10% the diameter of the particle size distribution (D 10) and 50% diameter (D 50)
Of 20 to 80% by weight of silicon carbide powder of 0.2 or more and the molar ratio of metal silicon to carbon (metal silicon / carbon) is 1.0 to
Mixed powder of metallic silicon powder and carbon material that is 2.0 80 ~ 2
A method for producing a porous conductive silicon carbide sintered body, which comprises: blending 0% by weight to form a formed body, heating the formed body in an atmosphere containing nitrogen gas, nitriding it, and then carbonizing.
度から 1100 ℃〜 1800 ℃の任意の温度までをN2 分圧
が 0.2 atm以上の非酸化性雰囲気中で 600℃/hr以下の
昇温速度で加熱した後、(2)N2 分圧が 0.2 atm 未
満の非酸化性雰囲気中で 600℃/hr以下の昇温速度で 1
500 ℃以上でかつ(1)の最高温度以上の温度に加熱す
ることを特徴とする請求項2記載の多孔質導電性炭化珪
素焼結体の製造方法。3. The molded body is (1) 600 ° C./hr at a temperature of 400 ° C. to an arbitrary temperature of 1100 ° C. to 1800 ° C. in a non-oxidizing atmosphere having a N 2 partial pressure of 0.2 atm or more. After heating at the following heating rate, (2) at a heating rate of 600 ° C / hr or less in a non-oxidizing atmosphere with a N 2 partial pressure of less than 0.2 atm 1
The method for producing a porous conductive silicon carbide sintered body according to claim 2, wherein the heating is performed at a temperature of 500 ° C or higher and a temperature of (1) or higher.
μm 、室温比抵抗 10Ω・ cm以下である請求項1記載の
多孔質導電性炭化珪素焼結体で構成されてなることを特
徴とする導電性ディーゼルパティキュレートフィルタ
ー。4. A porosity of 40% to 80% and an average pore diameter of 5 to 40.
A conductive diesel particulate filter comprising the porous conductive silicon carbide sintered body according to claim 1, having a specific resistance of 10 Ω · cm or less.
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| JP02038195A JP3681780B2 (en) | 1995-02-08 | 1995-02-08 | Porous conductive silicon carbide sintered body, its production method and use |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356383A (en) * | 2001-03-30 | 2002-12-13 | Ngk Insulators Ltd | Silicon carbide based porous compact and method for manufacturing the same |
| WO2006082938A1 (en) * | 2005-02-04 | 2006-08-10 | Ibiden Co., Ltd. | Ceramic honeycomb structure and method for manufacture thereof |
| US7427309B2 (en) | 1999-09-29 | 2008-09-23 | Ibiden Co., Ltd. | Honeycomb filter and ceramic filter assembly |
| US7438967B2 (en) | 2005-02-04 | 2008-10-21 | Ibiden Co., Ltd. | Ceramic honeycomb structural body |
| JP2009012005A (en) * | 2008-08-11 | 2009-01-22 | Ibiden Co Ltd | Honeycomb filter and filter aggregate |
| JP2009019634A (en) * | 2008-08-11 | 2009-01-29 | Ibiden Co Ltd | Exhaust emission control device |
| JP2010513206A (en) * | 2006-12-21 | 2010-04-30 | サン−ゴバン サントル ドゥ ルシェルシェ エ デトゥードゥ ユーロペン | Method for obtaining porous structure of silicon carbide substrate |
| US7794679B2 (en) | 2007-01-12 | 2010-09-14 | Honda Motor Co., Ltd. | Catalyst and method for purification of diesel engine exhaust gas |
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| JP2016183081A (en) * | 2015-03-26 | 2016-10-20 | 東京窯業株式会社 | Method for producing conductive silicon carbide sintered body and conductive silicon carbide sintered body |
| JP2017178771A (en) * | 2016-03-25 | 2017-10-05 | 東京窯業株式会社 | Production method of conductive silicon carbide-based sintered body and conductive silicon carbide-based sintered body |
| CN113443914A (en) * | 2020-03-25 | 2021-09-28 | 日本碍子株式会社 | Method for producing silicon carbide-containing honeycomb structure |
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-
1995
- 1995-02-08 JP JP02038195A patent/JP3681780B2/en not_active Expired - Lifetime
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7427309B2 (en) | 1999-09-29 | 2008-09-23 | Ibiden Co., Ltd. | Honeycomb filter and ceramic filter assembly |
| JP2002356383A (en) * | 2001-03-30 | 2002-12-13 | Ngk Insulators Ltd | Silicon carbide based porous compact and method for manufacturing the same |
| WO2006082938A1 (en) * | 2005-02-04 | 2006-08-10 | Ibiden Co., Ltd. | Ceramic honeycomb structure and method for manufacture thereof |
| US7438967B2 (en) | 2005-02-04 | 2008-10-21 | Ibiden Co., Ltd. | Ceramic honeycomb structural body |
| JP2010513206A (en) * | 2006-12-21 | 2010-04-30 | サン−ゴバン サントル ドゥ ルシェルシェ エ デトゥードゥ ユーロペン | Method for obtaining porous structure of silicon carbide substrate |
| US7794679B2 (en) | 2007-01-12 | 2010-09-14 | Honda Motor Co., Ltd. | Catalyst and method for purification of diesel engine exhaust gas |
| JP2009012005A (en) * | 2008-08-11 | 2009-01-22 | Ibiden Co Ltd | Honeycomb filter and filter aggregate |
| JP2009019634A (en) * | 2008-08-11 | 2009-01-29 | Ibiden Co Ltd | Exhaust emission control device |
| JP2012046380A (en) * | 2010-08-27 | 2012-03-08 | Tokyo Yogyo Co Ltd | Method for producing silicon carbide porous body |
| CN103415468A (en) * | 2011-03-08 | 2013-11-27 | 信越化学工业株式会社 | Readily sinterable silicon carbide powder and silicon carbide ceramic sintered body |
| EP2684845A4 (en) * | 2011-03-08 | 2014-09-10 | Shinetsu Chemical Co | Readily sinterable silicon carbide powder and silicon carbide ceramic sintered body |
| WO2016052469A1 (en) * | 2014-09-29 | 2016-04-07 | イビデン株式会社 | Honeycomb filter and method for manufacturing same |
| JP2016067995A (en) * | 2014-09-29 | 2016-05-09 | イビデン株式会社 | Honeycomb filter and manufacturing method for the same |
| JP2016183081A (en) * | 2015-03-26 | 2016-10-20 | 東京窯業株式会社 | Method for producing conductive silicon carbide sintered body and conductive silicon carbide sintered body |
| JP2017178771A (en) * | 2016-03-25 | 2017-10-05 | 東京窯業株式会社 | Production method of conductive silicon carbide-based sintered body and conductive silicon carbide-based sintered body |
| CN113443914A (en) * | 2020-03-25 | 2021-09-28 | 日本碍子株式会社 | Method for producing silicon carbide-containing honeycomb structure |
| CN113443914B (en) * | 2020-03-25 | 2023-01-03 | 日本碍子株式会社 | Method for producing silicon carbide-containing honeycomb structure |
| CN116768647A (en) * | 2022-03-15 | 2023-09-19 | 日本碍子株式会社 | Composite sintered body, honeycomb structure, electrically heated catalytic converter and method for manufacturing composite sintered body |
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