JPH08220133A - Acceleration sensor - Google Patents
Acceleration sensorInfo
- Publication number
- JPH08220133A JPH08220133A JP7022518A JP2251895A JPH08220133A JP H08220133 A JPH08220133 A JP H08220133A JP 7022518 A JP7022518 A JP 7022518A JP 2251895 A JP2251895 A JP 2251895A JP H08220133 A JPH08220133 A JP H08220133A
- Authority
- JP
- Japan
- Prior art keywords
- acceleration
- weight portion
- electrode portions
- acceleration sensor
- capacitances
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Landscapes
- Pressure Sensors (AREA)
Abstract
(57)【要約】
【目的】 小型安価な２軸方向の加速度を検出できる加
速度センサを提供すること。
【構成】 重り部１１ａは梁部１１ｂに支持され、印加
加速度に応じて変位する。絶縁基板２２及び２３には、
それぞれ電極部２２ｂ及び２３ｂが形成されており、こ
れら電極部はＡ方向において重り部と対向している。こ
れによって、第１及び第２の静電容量が形成される。絶
縁基板２４及び２５には、それぞれ電極部２４ｂ及び２
５ｂが形成されており、これら電極部はＢ方向において
重り部と対向している。これによって、第３及び第４の
静電容量が形成される。重り部に加速度が印加された
際、第１及び第２の静電容量の変化分によってＡ方向の
加速度を検出し、第３及び第４の静電容量の変化分によ
ってＢ方向の加速度を検出する。
(57) [Abstract] [Purpose] To provide a small and inexpensive acceleration sensor capable of detecting acceleration in two axial directions. [Structure] The weight portion 11a is supported by the beam portion 11b and is displaced according to an applied acceleration. The insulating substrates 22 and 23 include
Electrode portions 22b and 23b are formed respectively, and these electrode portions face the weight portion in the A direction. As a result, the first and second capacitances are formed. The insulating substrates 24 and 25 have electrode portions 24b and 2 respectively.
5b is formed, and these electrode portions face the weight portion in the B direction. This forms the third and fourth capacitances. When acceleration is applied to the weight portion, the acceleration in the A direction is detected by the change in the first and second capacitances, and the acceleration in the B direction is detected by the change in the third and fourth capacitances. To do.
Description
【０００１】[0001]
【産業上の利用分野】本発明は加速度を検出するための
加速度センサに関し、特に、静電容量の変化によって加
速度を検出する加速度センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an acceleration sensor for detecting acceleration, and more particularly to an acceleration sensor for detecting acceleration based on a change in capacitance.
【０００２】[0002]
【従来の技術】一般に、加速度センサとして静電容量の
変化によって加速度を検出するセンサが知られており、
この種のセンサは、例えば、自動車、産業機械、及び家
電機器等に用いられている。2. Description of the Related Art Generally, as an acceleration sensor, a sensor that detects acceleration by a change in capacitance is known.
This type of sensor is used, for example, in automobiles, industrial machines, home appliances, and the like.
【０００３】ここで、図３を参照して、従来の加速度セ
ンサについて概説する。Here, a conventional acceleration sensor will be outlined with reference to FIG.
【０００４】図示の加速度センサはシリコン基板１１と
絶縁基板１２及び１３とを有しており、絶縁基板１２及
び１３には、例えば、パイレックスガラスが用いられ
る。シリコン基板１１には、異方性エッチング等の手法
によって梁部１１ａ及び重り部１１ｂが形成されてい
る。一方、絶縁基板１２及び１３にはそれぞれ段差部１
２ａ及び１３ａが形成されている。そして、これら段差
部１２ａ及び１３ａにはそれぞれ電極部１２ｂ及び１３
ｂが形成されている。The acceleration sensor shown in the figure has a silicon substrate 11 and insulating substrates 12 and 13. For the insulating substrates 12 and 13, for example, Pyrex glass is used. A beam portion 11a and a weight portion 11b are formed on the silicon substrate 11 by a method such as anisotropic etching. On the other hand, the stepped portion 1 is formed on each of the insulating substrates 12 and 13.
2a and 13a are formed. Then, the electrode portions 12b and 13 are provided on the step portions 12a and 13a, respectively.
b is formed.
【０００５】図３に示すように、電極部１２ａ及び１３
ｂとシリコン基板１１の重り部１１ｂとを対応させて、
絶縁基板１２及び１３とシリコン基板１１とによって内
部空間が形成るように絶縁基板１２及び１３とシリコン
基板１１とが組み合わされて静電溶接等によって接合さ
れる。As shown in FIG. 3, the electrode portions 12a and 13 are formed.
b and the weight portion 11b of the silicon substrate 11 are made to correspond to each other,
The insulating substrates 12 and 13 and the silicon substrate 11 are combined and joined by electrostatic welding or the like so that an internal space is formed by the insulating substrates 12 and 13 and the silicon substrate 11.
【０００６】上述のように、電極部１２ａ及び１３ｂと
シリコン基板１１の重り部１１ｂとを対向させてそれぞ
れ第１及び第２の空隙部を形成しているから、第１の空
隙部には静電容量Ｃ１が形成され、第２の空隙部には静
電容量Ｃ２が形成される。As described above, since the electrode portions 12a and 13b and the weight portion 11b of the silicon substrate 11 are opposed to each other to form the first and second void portions, respectively, the first void portion has a static gap. The capacitance C1 is formed, and the capacitance C2 is formed in the second void portion.
【０００７】いま、外部から加速度が印加されると、こ
れによって、重り部１１ｂは梁部１１ａで支持されてい
る構造であるから、重り部１１ｂが変位することにな
る。この結果、第１及び第２の空隙部において、電極部
１２ａ及び１３ｂと重り部１１ｂと間隔が変化すること
になる。この間隔の変化量（変位量）は外部から印加さ
れた加速度の大きさに比例する。上述のように、間隔が
変化すると、静電容量Ｃ１及びＣ２が変化し、この変化
量を後段の処理回路（例えば、容量−周波数変換回路、
又は容量−電圧変換回路）によって検出して印加加速度
を知ることができる。When acceleration is applied from the outside, the weight portion 11b is displaced due to the structure in which the weight portion 11b is supported by the beam portion 11a. As a result, the distance between the electrode portions 12a and 13b and the weight portion 11b changes in the first and second gaps. The change amount (displacement amount) of this interval is proportional to the magnitude of the acceleration applied from the outside. As described above, when the interval changes, the electrostatic capacitances C1 and C2 change, and the amount of change is processed by a processing circuit (for example, a capacitance-frequency conversion circuit,
Alternatively, it is possible to know the applied acceleration by detecting with a capacitance-voltage conversion circuit).
【０００８】[0008]
【発明が解決しようとする課題】ところで、従来の加速
度センサでは、加速度の方向は１軸方向のみ検出できる
だけである。つまり、図３において、下から上（又は上
から下）に延びる軸方向における加速度のみが検出でき
るだけであって、２軸方向において加速度を検出しよう
とすると、図３に示す加速度センサを２個準備して、こ
れら速度センサをその検出方向が互いに直角となるよう
に配置する必要がある。By the way, in the conventional acceleration sensor, the direction of acceleration can be detected only in the uniaxial direction. That is, in FIG. 3, only the acceleration in the axial direction extending from the bottom to the top (or the top to the bottom) can be detected, and if the acceleration is to be detected in the two axes, two acceleration sensors shown in FIG. 3 are prepared. Then, these speed sensors must be arranged so that their detection directions are at right angles to each other.
【０００９】ところが、このように、２台の加速度セン
サを用いると装置全体の寸法が大きくなってしまうばか
りでなく、コストアップになってしまうという問題点が
ある。However, when two acceleration sensors are used as described above, not only the size of the entire apparatus becomes large, but also the cost increases.
【００１０】本発明の目的は小型でしかも安価で２軸方
向の加速度を検出できる加速度センサを提供することに
ある。An object of the present invention is to provide an acceleration sensor which is small in size and inexpensive, and which can detect acceleration in two axial directions.
【００１１】[0011]
【課題を解決するための手段】本発明によれば、印加さ
れた加速度に応じてその位置が変位する重り部と、所定
の第１の方向において前記重り部と対向して前記重り部
とそれぞれ第１及び第２の静電容量を形成するための第
１及び第２の電極部と、前記第１の方向に直交する第２
の方向において前記重り部と対向して前記重り部とそれ
ぞれ第３及び第４の静電容量を形成するための第３及び
第４の電極部とを有し、前記第１及び前記第２の静電容
量の変化分に応じて前記第１の方向における加速度を検
出して、前記第３及び前記第４の静電容量の変化分に応
じて前記第２の方向における加速度を検出するようにし
たことを特徴とする加速度センサが得られる。According to the present invention, a weight portion whose position is displaced in response to an applied acceleration, and a weight portion facing the weight portion in a predetermined first direction, respectively. First and second electrode portions for forming first and second capacitances, and second electrodes orthogonal to the first direction
The weight portion and third and fourth electrode portions for forming third and fourth capacitances, respectively, which face the weight portion in the direction of. The acceleration in the first direction is detected according to the change in capacitance, and the acceleration in the second direction is detected according to the change in the third and fourth capacitances. An acceleration sensor characterized by the above is obtained.
【００１２】[0012]
【作用】本発明では、同一の重り部を用いて第１の方向
における加速度を第１及び第２の静電容量の変化分で検
出し、第２の方向における加速度を第３及び第４の静電
容量の変化分で検出するようにしたから、小型でしかも
安価で２軸方向の加速度を検出できる。In the present invention, the same weight portion is used to detect the acceleration in the first direction by the amount of change in the first and second capacitances, and the acceleration in the second direction is detected as the third and fourth accelerations. Since the change amount of the electrostatic capacitance is used for detection, the biaxial acceleration can be detected at a small size and at low cost.
【００１３】[0013]
【実施例】以下本発明について実施例によって説明す
る。EXAMPLES The present invention will be described below with reference to examples.
【００１４】図１及び図２を参照して、図示の加速度セ
ンサはシリコン基板２１を備えるとともに絶縁基板２２
乃至２５を備えている（図１において、絶縁基板２２及
び２５は省略されている）。シリコン基板２１には重り
部２１ａが形成され、この重り部２１ａは梁部２１ｂに
よって支持されている。図２（ａ）に示すように、絶縁
基板２２及び２３には段差部２２ａ及び２３ａが形成さ
れており、これら段差部２２ａ及び２３ａにはそれぞれ
電極部２２ｂ及び２３ｂが形成されている。同様にし
て、図２（ｂ）に示すように、絶縁基板２４及び２５に
は段差部２４ａ及び２５ａが形成されており、これら段
差部２４ａ及び２５ａにはそれぞれ電極部２４ｂ及び２
５ｂが形成されている。Referring to FIGS. 1 and 2, the illustrated acceleration sensor includes a silicon substrate 21 and an insulating substrate 22.
To 25 (the insulating substrates 22 and 25 are omitted in FIG. 1). A weight portion 21a is formed on the silicon substrate 21, and the weight portion 21a is supported by the beam portion 21b. As shown in FIG. 2A, step portions 22a and 23a are formed on the insulating substrates 22 and 23, and electrode portions 22b and 23b are formed on the step portions 22a and 23a, respectively. Similarly, as shown in FIG. 2B, step portions 24a and 25a are formed on the insulating substrates 24 and 25, and the electrode portions 24b and 2 are formed on the step portions 24a and 25a, respectively.
5b are formed.
【００１５】これら絶縁基板２２乃至２５はシリコン基
板２１に接合される。具体的には、絶縁基板２２及び２
３はシリコン基板２１の上面及び下面に接合され、この
際、電極部２２ｂ及び２３ｂは重り部２１ａに対向して
いる。一方、絶縁基板２４及び２５はシリコン基板２１
の左側面面及び右側面に接合され、この際、電極部２４
ｂ及び２５ｂは重り部２１ａに対向している。この結
果、各電極部２２ｂ乃至２５ｂと重り部２１ａとの間に
はそれぞれ静電容量Ｃ１乃至Ｃ４が形成される。These insulating substrates 22 to 25 are bonded to the silicon substrate 21. Specifically, the insulating substrates 22 and 2
3 is bonded to the upper surface and the lower surface of the silicon substrate 21, and at this time, the electrode portions 22b and 23b face the weight portion 21a. On the other hand, the insulating substrates 24 and 25 are the silicon substrate 21.
Are joined to the left side surface and the right side surface of the
b and 25b face the weight portion 21a. As a result, capacitances C1 to C4 are formed between the electrode portions 22b to 25b and the weight portion 21a, respectively.
【００１６】この加速度センサでは、Ａ方向（図２
（ａ）に示す方向）とＢ方向（図２（ｂ）に示す方向）
とに印加される加速度をそれぞれ単独で検出する。In this acceleration sensor, the direction A (see FIG.
(Direction shown in (a)) and B direction (direction shown in FIG. 2B)
The accelerations applied to and are detected independently.
【００１７】図２を参照して、いまＡ方向に加速度が印
加されると、重り部２１ａはＡ方向に変位することにな
る。この結果、静電容量Ｃ１及びＣ２が変化する。そし
て、この静電容量Ｃ１及びＣ２の変化分を後段の処理回
路（図示せず、例えば、容量−周波数変換回路、又は容
量−電圧変換回路）で周波数信号又は電圧信号に変換し
て、周波数信号又は電圧信号に応じて加速度を検出す
る。Referring to FIG. 2, when acceleration is applied in the A direction, the weight portion 21a is displaced in the A direction. As a result, the capacitances C1 and C2 change. Then, a change amount of the electrostatic capacitances C1 and C2 is converted into a frequency signal or a voltage signal by a processing circuit (not shown, for example, a capacitance-frequency conversion circuit or a capacitance-voltage conversion circuit) in a subsequent stage, and a frequency signal is generated. Alternatively, the acceleration is detected according to the voltage signal.
【００１８】一方、Ｂ方向に加速度が印加されると、重
り部２１ａはＢ方向に変位する。この結果、静電容量Ｃ
３及びＣ４が変化する。そして、この静電容量Ｃ３及び
Ｃ４の変化分を後段の処理回路で周波数信号又は電圧信
号に変換して、周波数信号又は電圧信号に応じて加速度
を検出する。On the other hand, when acceleration is applied in the B direction, the weight portion 21a is displaced in the B direction. As a result, the capacitance C
3 and C4 change. Then, the change amount of the electrostatic capacitances C3 and C4 is converted into a frequency signal or a voltage signal by a processing circuit in the subsequent stage, and the acceleration is detected according to the frequency signal or the voltage signal.
【００１９】なお、上述の実施例では、一本の梁部で重
り部を片持ち支持しているが、両持ち梁構造としてもよ
い。In the above embodiment, the weight portion is supported by one beam portion in a cantilever manner, but a double-supported beam structure may be used.
【００２０】[0020]
【発明の効果】以上説明したように、本発明では一つに
加速度センサで２軸方向の加速度を検出できるので、小
型化できるばかりでなく、安価にできるという効果があ
る。As described above, according to the present invention, the acceleration sensor can detect acceleration in two axial directions. Therefore, not only can the size be reduced, but the cost can be reduced.
【図１】本発明による加速度センサの一実施例を一部省
略して示す斜視図である。FIG. 1 is a perspective view showing an embodiment of an acceleration sensor according to the present invention with a part thereof omitted.
【図２】本発明のよる加速度センサの断面図であり、
（ａ）は側断面図、（ｂ）は正断面図である。FIG. 2 is a cross-sectional view of an acceleration sensor according to the present invention,
(A) is a side sectional view and (b) is a front sectional view.
【図３】従来の加速度センサを示す断面図である。FIG. 3 is a sectional view showing a conventional acceleration sensor.
２１ シリコン基板２１ ２１ａ 重り部 ２１ｂ 梁部 ２２〜２５ 絶縁基板 ２２ａ〜２５ａ 段差部 ２２ｂ〜２５ｂ 電極部 21 Silicon substrate 21 21a Weight part 21b Beam part 22-25 Insulating substrate 22a-25a Step part 22b-25b Electrode part
Claims (4)
位する重り部と、所定の第１の方向において前記重り部
と対向して前記重り部とそれぞれ第１及び第２の静電容
量を形成するための第１及び第２の電極部と、前記第１
の方向に直交する第２の方向において前記重り部と対向
して前記重り部とそれぞれ第３及び第４の静電容量を形
成するための第３及び第４の電極部とを有し、前記第１
及び前記第２の静電容量の変化分に応じて前記第１の方
向における加速度を検出して、前記第３及び前記第４の
静電容量の変化分に応じて前記第２の方向における加速
度を検出するようにしたことを特徴とする加速度セン
サ。1. A weight portion whose position is displaced in accordance with an applied acceleration, and a weight portion facing the weight portion in a predetermined first direction, the weight portion and a first capacitance and a second capacitance, respectively. First and second electrode portions for forming the first and second electrode portions;
The weight portion and third and fourth electrode portions for forming third and fourth capacitances, respectively, facing the weight portion in a second direction orthogonal to the direction, First
And the acceleration in the first direction is detected according to the change in the second capacitance, and the acceleration in the second direction is detected according to the change in the third and fourth capacitances. An acceleration sensor characterized in that it is adapted to detect.
いて、前記重り部はシリコン基板に形成されるとともに
前記シリコン基板に形成された梁部によって変位可能に
支持されていることを特徴とする加速度センサ。2. The acceleration sensor according to claim 1, wherein the weight portion is formed on a silicon substrate and is displaceably supported by a beam portion formed on the silicon substrate. Sensor.
いて、前記第１乃至前記第４の電極部はそれぞれ第１乃
至第４の絶縁基板上に形成されていることを特徴とする
加速度センサ。3. The acceleration sensor according to claim 1, wherein the first to fourth electrode portions are formed on first to fourth insulating substrates, respectively.
いて、前記第１及び第２の絶縁基板には前記第１の方向
において所定の距離凹む段差部が形成され、前記第３及
び第４の絶縁基板には前記第２の方向において所定の距
離凹む段差部が形成されており、前記第１乃至前記第４
の電極部はそれぞれ前記第１乃至第４の絶縁基板におい
て前記段差部に形成されていることを特徴とする加速度
センサ。4. The acceleration sensor according to claim 3, wherein the first and second insulating substrates are formed with a stepped portion that is recessed a predetermined distance in the first direction, and the third and fourth insulating substrates are formed. The insulating substrate is formed with a stepped portion that is recessed by a predetermined distance in the second direction, and the first to fourth portions are formed.
2. The acceleration sensor according to claim 1, wherein the electrode portions are formed on the stepped portions on the first to fourth insulating substrates, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7022518A JPH08220133A (en) | 1995-02-10 | 1995-02-10 | Acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7022518A JPH08220133A (en) | 1995-02-10 | 1995-02-10 | Acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08220133A true JPH08220133A (en) | 1996-08-30 |
Family
ID=12084999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7022518A Pending JPH08220133A (en) | 1995-02-10 | 1995-02-10 | Acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08220133A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008162586A (en) * | 2008-02-12 | 2008-07-17 | Yamaha Motor Electronics Co Ltd | Anti-theft device of motorcycle |
| CN102275860A (en) * | 2010-06-11 | 2011-12-14 | 江苏丽恒电子有限公司 | Inertia micro-electro-mechanical sensor and manufacturing method thereof |
-
1995
- 1995-02-10 JP JP7022518A patent/JPH08220133A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008162586A (en) * | 2008-02-12 | 2008-07-17 | Yamaha Motor Electronics Co Ltd | Anti-theft device of motorcycle |
| CN102275860A (en) * | 2010-06-11 | 2011-12-14 | 江苏丽恒电子有限公司 | Inertia micro-electro-mechanical sensor and manufacturing method thereof |
| WO2011153837A1 (en) * | 2010-06-11 | 2011-12-15 | 上海丽恒光微电子科技有限公司 | Inertial micro electromechanical sensor and manufacturing method thereof |
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