JPH08222907A - High temperature superconducting microwave 4-pole bandpass filter - Google Patents
High temperature superconducting microwave 4-pole bandpass filterInfo
- Publication number
- JPH08222907A JPH08222907A JP29842795A JP29842795A JPH08222907A JP H08222907 A JPH08222907 A JP H08222907A JP 29842795 A JP29842795 A JP 29842795A JP 29842795 A JP29842795 A JP 29842795A JP H08222907 A JPH08222907 A JP H08222907A
- Authority
- JP
- Japan
- Prior art keywords
- bandpass filter
- temperature superconducting
- microwave
- crystal substrate
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 239000002887 superconductor Substances 0.000 claims abstract description 11
- 238000010168 coupling process Methods 0.000 claims description 24
- 238000005859 coupling reaction Methods 0.000 claims description 24
- 230000008878 coupling Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 238000012360 testing method Methods 0.000 claims description 7
- 230000010354 integration Effects 0.000 claims description 2
- 229910002480 Cu-O Inorganic materials 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910002367 SrTiO Inorganic materials 0.000 claims 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 claims 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 15
- 238000001914 filtration Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 230000008054 signal transmission Effects 0.000 description 6
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
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- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
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- 238000004381 surface treatment Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
(57)【要約】
【課題】 マイクロ波通信システムの部品を小型化し性
能を向上させる。
【解決手段】 単結晶基板上に高温超伝導体を使用しエ
ピタキシアル薄膜を成長させた平行結合線方式の高温超
伝導４極帯域通過フィルタに関し、上部表面及び下部表
面を有する単結晶基板、上記単結晶基板の上部表面上の
一側に、高温超伝導薄膜を使用しマイクロストリップ線
にて形成され、入力用コネクタと連結され外部よりマイ
クロ波信号を受ける入力端；上記単結晶基板の上部表面
上の他側に上記入力端と同一な高温超伝導体を使用しマ
イクロストリップ線に形成され、出力用コネクタと連結
されフィルタリング信号を外部へ出力する出力端；上記
単結晶基板の上部表面上の上記入力端及び出力端の間に
同一な高温超伝導体で上記入力端及び出力端と整合され
電気的に連結されるように形成されたフィルタパターン
を含む。
(57) 【Abstract】 PROBLEM TO BE SOLVED: To reduce the size of parts of a microwave communication system and improve the performance. A parallel-coupling-line-type high-temperature superconducting 4-pole bandpass filter in which an epitaxial thin film is grown on a single-crystal substrate by using a high-temperature superconductor, the single-crystal substrate having an upper surface and a lower surface, An input end formed by a microstrip line using a high temperature superconducting thin film on one side of the upper surface of the single crystal substrate and connected to an input connector to receive a microwave signal from the outside; the upper surface of the single crystal substrate An output end formed on a microstrip line using the same high temperature superconductor as the input end on the other side and connected to an output connector to output a filtering signal to the outside; on the upper surface of the single crystal substrate A filter pattern is formed between the input end and the output end of the same high temperature superconductor so as to be aligned and electrically connected to the input end and the output end.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は高温超伝導マイクロ
波４極帯域通過フィルタに係る、特に、マイクロ波特性
が優れてマイクロ波通信システムを小型化させて性能を
向上することができる。高温超伝導エピタキシアル薄膜
と平行結合線（Ｐａｒａｌｌｅｄ Ｃｏｕｐｌｅｄ−ｌ
ｉｎｅ）方式を採用したフィルタパターンを使用する高
温超伝導マイクロ波４極帯域通過フィルタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high temperature superconducting microwave quadrupole bandpass filter, and more particularly, it has excellent microwave characteristics and can downsize a microwave communication system to improve its performance. High temperature superconducting epitaxial thin film and parallel coupled line (Paralleled Coupled-1)
The present invention relates to a high-temperature superconducting microwave quadrupole bandpass filter using a filter pattern adopting the (ine) method.
【０００２】[0002]
【従来の技術】移動通信、衛星通信及び衛星放送などの
電波を利用する分野で良質の電波サービスの要求が暴増
し、大容量の高級情報に対する欲求の多様化、高度化、
個人化の趨勢に能動的に対応するためには、マイクロ波
通信システムを構成する種々の核心部品の特性向上と大
きさ及び重さの縮小などが核心の課題に浮き上げられて
いる。2. Description of the Related Art The demand for high-quality radio services in the field of using radio waves such as mobile communications, satellite communications and satellite broadcasting has increased dramatically, and the diversification and sophistication of the desire for large-capacity high-class information has
In order to actively respond to the trend of personalization, improvement of the characteristics of various core parts constituting the microwave communication system and reduction of size and weight have been raised to the core issues.
【０００３】従って限定された電波資源を効率的に活用
するためには、非常に優れたマイクロ波特性を発揮する
材料開発だけでなく、高性能、高信頼度、小型化をなし
とげ得るマイクロ波部品開発が切実な状況である。Therefore, in order to efficiently utilize limited radio wave resources, microwaves that can achieve high performance, high reliability, and miniaturization as well as material development that exhibits extremely excellent microwave characteristics are achieved. The development of parts is urgent.
【０００４】故に、高い良好度（Ｑ−ｆａｃｔｏｒ）を
発揮し得る上、無損失及び無抵抗の特性を有する高温超
伝導体のマイクロ波応用は、通信部品の特性向上に非常
に有利なものと知られている。Therefore, the microwave application of the high temperature superconductor, which can exhibit high quality factor (Q-factor) and has no loss and no resistance, is very advantageous for improving the characteristics of communication parts. Are known.
【０００５】従って、マイクロ波特性が優れているＭｇ
Ｏ、ＬａＡｌＯ3、サファイア（Ｓｈａｐｐｈｉｒｅ）
などの単結晶基板に良質の高温超伝導エピタキシアル薄
膜を成長させて、成長された良質の薄膜を利用し最適に
設計されたマイクロ波素子及び回路を具現すればマイク
ロ波部品の小型化と高性能化をなしとげることと期待し
ている。Therefore, Mg having excellent microwave characteristics
O, LaAlO 3 , Sapphire
If a high-quality high-temperature superconducting epitaxial thin film is grown on a single crystal substrate such as, and an optimally designed microwave element and circuit are realized by using the grown high-quality thin film, downsizing of microwave parts and I expect it to improve performance.
【０００６】一方、マイクロ波通信システム用核心部品
の種々のマイクロ波帯域通過フィルタ（ｆｉｌｔｅｒ）
の設計及び製造で最も重要な点は、製造されたマイクロ
波素子が理論値（設計値）とほぼ一致する損失特性（Ｓ
21，Ｓ11）を発揮すべきことである。このようなフィル
タを開発するためには、製作が容易で、高周波応答特性
度が良好な平行結合線方式を採択したマイクロ波帯域通
過フィルタが有用で（高温超伝導ＭＨＩとを開発するた
めに）、性能、大きさ及び良好度などの特性のマイクロ
波帯域通過フィルタに比べて優秀であり、マイクロ波帯
域の電波高度の利用技術へも積極活用しなければならな
い。On the other hand, various microwave band-pass filters as core parts for microwave communication systems.
The most important point in the design and manufacturing of the device is that the manufactured microwave device has a loss characteristic (S
21 , S 11 ) should be demonstrated. In order to develop such a filter, a microwave band-pass filter adopting a parallel coupling line method, which is easy to manufacture and has a good high frequency response characteristic, is useful (for developing a high temperature superconducting MHI). It is superior to the microwave band pass filter in characteristics such as performance, size and goodness, and it must be actively used in the technology for utilizing the high level of radio wave in the microwave band.
【０００７】[0007]
【発明が解決しようとする課題】従って、本発明はマイ
クロ波特性が優秀な高温超伝導エピタキシアル薄膜と平
行結合線方式を採用したフィルタパターンを基本とし
て、衛星通信及び衛星放送などマイクロ波通信システム
に使用し得るマイクロ波用高温超伝導４極帯域通過フィ
ルタを提供することを目的とする。SUMMARY OF THE INVENTION Therefore, the present invention is based on a high temperature superconducting epitaxial thin film having excellent microwave characteristics and a filter pattern adopting a parallel coupling line system, and is based on microwave communication such as satellite communication and satellite broadcasting. It is an object of the present invention to provide a high temperature superconducting 4-pole bandpass filter for microwaves that can be used in a system.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に本発明による平行結合線方式の高温超伝導４極帯域通
過フィルタは、上部表面及び下部表面を有する単結晶基
板；上記単結晶基板の上部表面上の一側に高温超伝導薄
膜を使用しマイクロストリップ線から形成され、入力用
コネクタと連結され外部よりマイクロ波信号を受ける入
力端；上記単結晶基板の上部表面上の他側に上記入力端
と同一な高温伝導体を使用しマイクロストリップ線に形
成され、出力用コネクタと連結されフィルタリングされ
た信号を外部へ出力する出力端；上記単結晶基板の上部
表面上の上記入力端の面に同一な高温超伝導体に上記入
力端及び出力端と整合され電気的に連結されるように形
成され、所定周波数を通過させるために長さと通過帯域
の帯域幅による幅及び間隙を有する結合線に構成され、
上記入力端から入力される信号をフィルタリングし上記
出力端で出力するフィルタパターンを含む。In order to achieve the above object, a parallel-coupling wire type high temperature superconducting four-pole bandpass filter according to the present invention is a single crystal substrate having an upper surface and a lower surface; An input end formed of a microstrip line using a high temperature superconducting thin film on one side of the upper surface and connected to an input connector to receive a microwave signal from the outside; An output end formed on a microstrip line using the same high temperature conductor as the input end and connected to an output connector to output a filtered signal to the outside; a surface of the input end on the upper surface of the single crystal substrate. The same high temperature superconductor is formed so as to be matched and electrically connected to the input end and the output end, and has a length and a width of a pass band to pass a predetermined frequency. Configured to coupled lines with fine gap,
It includes a filter pattern for filtering a signal input from the input end and outputting the filtered signal at the output end.
【０００９】[0009]
【発明の実施の形態】以下、添付された図面を参照し本
発明を詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
【００１０】図１は本発明の一実施例による平行結合線
方式の高温超伝導４極帯域通過フィルタの平面図であ
る。FIG. 1 is a plan view of a parallel coupled wire type high temperature superconducting four-pole bandpass filter according to an embodiment of the present invention.
【００１１】図１で信号伝送用入力端１は高温超伝導マ
イクロストリップ線（ｌｉｎｅ；５０ｏｈｍ）で製作さ
れており、整合網（ｍａｔｃｈｉｎｇ ｎｅｔ ｗｏｒ
ｋ）を介して本発明の核心である平行結合線と連結され
る。In FIG. 1, the input end 1 for signal transmission is made of a high temperature superconducting microstrip line (50 ohm), and a matching network (matching network).
It is connected to the parallel coupling line which is the core of the present invention through k).
【００１２】そして試験治具（ｔｅｓｔ−ｊｉｇ）のハ
ウジングに付着されたＫ−型コネクタピンと連結される
ようになる。Then, the test jig is connected to the K-type connector pin attached to the housing of the test jig.
【００１３】フィルタパターン２は、本発明の核心であ
り、平行結合線方式にて製作したマイクロ波用ｃｈｅｂ
ｙｓｈｅｖ型帯域通過フィルタパターンである。この時
中心周波数１２ＧＨｚであり帯域幅は７００ＭＨｚ（１
１．７ＧＨｚ−１２．４ＧＨｚ）であり、平行結合線よ
り現われる極数は４個である。The filter pattern 2 is the core of the present invention, and is a microwave cheb manufactured by the parallel coupling line method.
It is a yshev type band pass filter pattern. At this time, the center frequency is 12 GHz and the bandwidth is 700 MHz (1
1.7 GHz-12.4 GHz), and the number of poles appearing from the parallel coupling line is four.
【００１４】更にフィルタパターン２は、マイクロスト
リップ線を基本とするので伝送線路とＪ−型インバータ
（ｉｎｖｅｒｔｅｒ）を利用したマイクロ波帯域通過フ
ィルタ設計及び解析理論により平行結合線方式の帯域通
過フィルタを設計し、マイクロ波部品設計ツール（Ｓｏ
ｆｔ Ｗａｒｅ：Ｔｏｕｃｈｓｔｏｎｅ）を使って設計
されたパターンをシミュレーションすることにより最適
化させる。Further, since the filter pattern 2 is basically a microstrip line, a parallel coupling line type bandpass filter is designed by a microwave bandpass filter design utilizing a transmission line and a J-type inverter and analysis theory. Microwave component design tool (So
Optimized by simulating a pattern designed using ftWare: Touchstone).
【００１５】平行結合線方式とは、進行波の共振現像を
利用したものであり、並ぶ２つの伝送線は、互いにλ／
４（λは波長）だけ重なり、適当なギャップ（ｇａｐ）
も有し、次いで周期的な構造をつくって共振（ｒｅｓｏ
ｎａｎｃｅ）と結合（ｃｏｕｐｌｉｎｇ）によって所望
の周波数帯域に於いてのみ特定信号（正弦波）が減殺な
く通過するようにしたものである。The parallel coupling line system utilizes resonance development of traveling waves, and two transmission lines arranged side by side have λ /
4 (λ is the wavelength) overlap, and an appropriate gap
And then create a periodic structure to create resonance (reso
The specific signal (sinusoidal wave) is allowed to pass through only in a desired frequency band by non-reduction and coupling.
【００１６】本発明は、移動通信、衛星通信及び衛星放
送を考慮した帯域通過フィルタであるので、信号を通過
させる帯域（１１．７ＧＨｚ−１２．４ＧＨｚ）の中心
周波数（ｆ0）は１２ＧＨｚ、通過帯域の帯域幅（ｂａ
ｎｄ ｗｉｄｔｈ）は７００ＭＨｚとし、リップルが殆
どなく平担度（ｆｌａｔｎｅｓｓ）が良好な通過帯域
（ｐａｓｓｂａｎｄ）を有する。Since the present invention is a band pass filter considering mobile communication, satellite communication and satellite broadcasting, the center frequency (f 0 ) of the band (11.7 GHz-12.4 GHz) for passing signals is 12 GHz. Bandwidth of the band (ba
nd width is 700 MHz and has a pass band with almost no ripple and good flatness.
【００１７】更に帯域幅両端の阻止帯域（ｓｔｏｐｂａ
ｎｄ）をより増加させて、帯域通過フィルタのスカート
（ｓｋｉｒｔ）特性を向上させ、より急峻に（ｓｔｏ
ｐ）するために極数（ｐｏｌｅ ｎｕｍｂｅｒ）を増加
させ４極にした。Furthermore, stopbands (stopba) at both ends of the bandwidth
nd) is further increased to improve the skirt characteristic of the bandpass filter, and the steeper (sto) is improved.
p), the number of poles was increased to 4 poles.
【００１８】そして帯域通過フィルタ設計時には、使用
される単結晶基板４であるＭｇＯ及びＬａＡｌＯ3のそ
れぞれの誘電率（εr）及び厚みと、この単結晶基板４
上に成長させるＹＢａ2Ｃｕ3Ｏ7-xの高温伝導エピタキ
シアル薄膜の厚みなどを考慮して、入出力端と平行結合
線及び傾斜の平行結合線の線幅及び長さと平行結合線間
のギャップ（ｇａｐ）を定めた。When designing the bandpass filter, the dielectric constants (ε r ) and thicknesses of the single-crystal substrates 4 used, MgO and LaAlO 3 , respectively, and the single-crystal substrates 4 are used.
Considering the thickness of the high - temperature conductive epitaxial thin film of YBa 2 Cu 3 O 7-x grown on the upper and lower sides, the line width and length of the parallel coupling line and the parallel coupling line and the parallel coupling line of the inclined parallel coupling line A gap was defined.
【００１９】上記において、ＭｇＯ及びＬａＡｌＯ3各
々の誘電率（εr）は、９．６と２４であり、厚みは
０．５ｍｍと１．０ｍｍであり、上記ＹＢａ2Ｃｕ3Ｏ
7-xの高温超伝導エピタキシアル薄膜の厚みは４５００
オングストロームとする。In the above, the dielectric constants (ε r ) of MgO and LaAlO 3 are 9.6 and 24, the thickness is 0.5 mm and 1.0 mm, and the above YBa 2 Cu 3 O is
The thickness of 7-x high temperature superconducting epitaxial thin film is 4500
Angstrom.
【００２０】次いで数回のシミュレ−ション（Ｓｉｍｕ
ｌａｔｉｏｎ）を経て４極帯域通過フィルタの最適回路
パターンが得られ、かつマイクロ波伝送応答（ｍｉｃｒ
ｏｗａｖｅ ｔｒａｎｓｍｉｓｓｉｏｎ ｒｅｓｐｏｎ
ｓｅｓ）特性を調べてみた。Next, several simulations (Simu
The optimum circuit pattern of the 4-pole band pass filter is obtained through the
owave transmission response
ses) The characteristics were examined.
【００２１】このような過程を経て決定した最適設計さ
れたフィルタパターンに基づいて、高温超伝導マイクロ
波４極帯域通過フィルタを製造することができる電子線
・マスク（Ｃｒがコーティングされたガラス−マスクで
ある）を製作した。An electron beam mask (Cr-coated glass-mask) capable of manufacturing a high temperature superconducting microwave quadrupole bandpass filter based on the optimally designed filter pattern determined through the above process. Was produced).
【００２２】信号伝送用出力端３は、信号伝送用入力端
１と同様に高温超伝導マイクロストリップ線（５０ｏｈ
ｍ）で製作され、整合網（ｍａｔｃｈｉｎｇ ｎｅｔ
ｗｏｒｋ）を介して平行結合線及び傾斜された平行結合
線と連結され試験治具のハウジングに付着されたＫ−型
コネクタピンとを連結するようになる。The signal transmission output end 3 is similar to the signal transmission input end 1 in the high temperature superconducting microstrip line (50 ohm).
m), matching net (matching net)
The K-type connector pin attached to the housing of the test jig is connected to the parallel connecting line and the inclined parallel connecting line via the work.
【００２３】本発明にて使用されたマイクロ波帯域通過
フィルタ用基板は、ＭｇＯ及びＬａＡｌＯ3などの単結
合基板４である。The microwave band pass filter substrate used in the present invention is a single bond substrate 4 such as MgO and LaAlO 3 .
【００２４】特に、ＬａＡｌＯ3基板自体の低温マイク
ロ波特性は、ＭｇＯ基板を使用する場合より劣るが、Ｌ
ａＡｌＯ3基板上に製造した高温超伝導ＹＢａ2Ｃｕ3Ｏ
7-xエピタキシアル薄膜の電気的特性や表面特性はＭｇ
Ｏ基板を使用する場合よりさらに優秀なものと知られて
いる。In particular, the low temperature microwave characteristics of the LaAlO 3 substrate itself are inferior to the case of using the MgO substrate, but L
High temperature superconducting YBa 2 Cu 3 O produced on aAlO 3 substrate
The electrical and surface properties of 7-x epitaxial thin films are Mg
It is known to be even better than the case of using an O substrate.
【００２５】そして試験治具（ｊｉｇ）の内部の底と優
秀な電気的整合及び接触のため、蒸着する接地平面５用
Ｔｉ／Ａｇ２重薄膜は、電子線蒸発器により均一に蒸着
することができる。また、ＭｇＯ及びＬａＡｌＯ3単結
晶基板４との接着も非常に良好である。そして一般的に
マイクロ波通信部品へ使用する金（Ａｕ）薄膜に比べて
マイクロ波特性も優れ、製造価格も非常に低価で接地平
面としてはもっとも適当である。Due to excellent electrical matching and contact with the inner bottom of the test jig, the Ti / Ag double thin film for the ground plane 5 to be deposited can be uniformly deposited by an electron beam evaporator. . Also, the adhesion with the MgO and LaAlO 3 single crystal substrate 4 is very good. In addition, microwave characteristics are generally superior to those of gold (Au) thin films used for microwave communication components, the manufacturing cost is very low, and it is most suitable as a ground plane.
【００２６】図２は本発明の他の実施例による傾斜され
た平行結合線方式の高温超伝導４極帯域通過フィルタの
平面図である。FIG. 2 is a plan view of a tilted parallel coupling line type high temperature superconducting quadrupole bandpass filter according to another embodiment of the present invention.
【００２７】上記の図２に図示された傾斜された平行結
合線方式の高温超伝導４極帯域通過フィルタは、図１に
図示された平行結合線方式の高温超伝導４極帯域通過フ
ィルタとほぼ同一であるが集積度を高めるために平行結
合線を傾けたのが異なる。The tilted parallel coupling line type high temperature superconducting four-pole bandpass filter shown in FIG. 2 is substantially the same as the parallel coupling line type high temperature superconducting four-pole bandpass filter shown in FIG. They are the same, except that the parallel coupling lines are inclined to increase the degree of integration.
【００２８】図３は本発明の一実施例のＹＢａ2Ｃｕ3Ｏ
7-x／ＬａＡｌＯ3／Ｔｉ／Ａｇ構造の高温超伝導帯域通
過フィルタの製作工程を説明する図面で、（ａ）はＥＣ
Ｒ−イオンミリング（ｉｏｎ ｍｉｌｌｉｎｇ）装備に
よるＬａＡｌＯ3単結晶基板４の表面処理工程、（ｂ）
はパルスレーザ蒸着法による高温超伝導体ＹＢａ2Ｃｕ3
Ｏ7-xエピタキシアル薄膜６の製造工程、（ｃ）はフォ
トリソグラフィ（ｐｈｏｔｏｌｉｔｈｏｇｒａｐｈｉ
ｃ）工程を遂行するためのフォトレジスト（ｐｈｏｔｏ
ｒｅｓｉｓｔ）（ＰＲ：７）を塗布する工程、（ｄ）は
フォトリソグラフィ（ｐｈｏｔｏｌｉｔｈｏｇｒａｐｈ
ｉｃ）工程とＥＤＴＡ（エチレンジアミン四酢酸：Ｅｔ
ｈｙｌｅｎｅｄｉａｍｉｎｅｔｅｔｒａａｃｅｔｉｃ
ａｃｉｄ）蝕刻工程による微細形像化のためのパタニン
グ工程、（ｅ）はアセトンと蒸留水（ＤＩ−ｗａｔｅ
ｒ）によるフォトレジスト（ｐｈｏｔｏｒｅｓｉｓｔ）
７膜除去及び不純物洗浄工程を各々現わしている。FIG. 3 shows YBa 2 Cu 3 O of one embodiment of the present invention.
7A to 7C are drawings for explaining a manufacturing process of a high-temperature superconducting bandpass filter having a 7-x / LaAlO 3 / Ti / Ag structure.
Surface treatment step of LaAlO 3 single crystal substrate 4 by R-ion milling equipment, (b)
Is a high temperature superconductor YBa 2 Cu 3 produced by pulsed laser deposition.
The manufacturing process of the O 7-x epitaxial thin film 6, (c) is photolithography.
c) photoresist for performing the process.
resist) (PR: 7) is applied, and (d) is photolithography.
ic) process and EDTA (ethylenediaminetetraacetic acid: Et
hylenediaminetraacetic
acid) a patterning process for microfabrication by an etching process, (e) acetone and distilled water (DI-weight)
Photoresist by r)
7 film removal and impurity cleaning steps are shown.
【００２９】優秀な高温超伝導マイクロ波伝送線素子を
製作するためには、良質のエピタキシアル薄膜が要求さ
れるので、本発明においては優秀性が立証されたパルス
レーザ蒸着装備を利用して単結晶基板４の上部表面に高
温超伝導エピタキシアル薄膜６を製造する。In order to fabricate an excellent high temperature superconducting microwave transmission line device, a high quality epitaxial thin film is required. Therefore, in the present invention, a single pulse laser deposition apparatus proved to be excellent is used. A high temperature superconducting epitaxial thin film 6 is manufactured on the upper surface of the crystal substrate 4.
【００３０】上記において、高温超伝導エピタキシアル
薄膜６を７５０℃程度の温度を有する単結晶基板４上に
ＸｅＣｌエクサイマーレーザー（波長：３０８ｎｍ）を
使用し２００ｍＴｏｒｒの酸素分圧状態の蒸着チェンバ
ー内で成長させる。In the above, the high-temperature superconducting epitaxial thin film 6 was placed on the single crystal substrate 4 having a temperature of about 750 ° C. using a XeCl excimer laser (wavelength: 308 nm) in a vapor deposition chamber in an oxygen partial pressure state of 200 mTorr. Grow.
【００３１】上記の単結晶基板４はマイクロ波特性も良
好で良質の高温超伝導ＹＢａ2Ｃｕ3Ｏ7-xエピタキシア
ル薄膜６の製造に優れたＭｇＯ又はＬａＡｌＯ3基板を
使用した。As the above-mentioned single crystal substrate 4, a MgO or LaAlO 3 substrate was used, which has excellent microwave characteristics and is excellent in producing a high-temperature superconducting YBa 2 Cu 3 O 7-x epitaxial thin film 6.
【００３２】蒸着の後は５５０℃で酸素をながしながら
１時間程度の熱処理をしてエピタキシアル薄膜６を成長
させた。After the vapor deposition, the epitaxial thin film 6 was grown by heat treatment at 550 ° C. for about 1 hour while flowing oxygen.
【００３３】良質のエピタキシアル薄膜６を製造し、最
適フィルタパタンが転写されている電子線−マスクを用
意した後、フォトリソグラフィ（Ｐｈｏｔｏｌｉｔｈｏ
ｇｒａｐｈｉｃ）工程と蝕刻工程を通じて、信号伝送線
入力端１及び出力端３と帯域通過フィルタパターン３か
ら成っている高温超伝導マイクロ波帯域通過フィルタを
ＭｇＯ又はＬａＡｌＯ3単結晶基板４上に具現した。After manufacturing a high-quality epitaxial thin film 6 and preparing an electron beam-mask on which an optimum filter pattern is transferred, photolithography (Photolitho) is performed.
A high temperature superconducting microwave band pass filter consisting of a signal transmission line input end 1 and an output end 3 and a band pass filter pattern 3 was embodied on a MgO or LaAlO 3 single crystal substrate 4 through a graphic process and an etching process.
【００３４】この工程を詳細に説明すれば下記の通りで
ある。The process will be described in detail below.
【００３５】先ず高温超伝導ＹＢａ2Ｃｕ3Ｏ7-xエピタ
キシアル薄膜６をＭｇＯ又はＬａＡｌＯ3単結晶基板４
上にレーザ蒸着法で成長させる。First, a high-temperature superconducting YBa 2 Cu 3 O 7-x epitaxial thin film 6 was formed on a MgO or LaAlO 3 single crystal substrate 4.
Grow on top by laser deposition.
【００３６】次にはマイクロ波帯域通過フィルタ設計及
び解析理論とシミュレーション（Ｔｏｕｃｈｓｔｏｎｅ
ＴＭ）にて求めた、最適パタン（図２の平面図）の転
写されている電子線−マスクと半導体素子製造時使用す
るフォトリソグラフィ（Ｐｈｏｔｏｌｉｔｈｏｇｒａｐ
ｈｉｃ）工程及び湿式蝕刻工程を応用し、４極帯域通過
フィルタパターンをＹＢａ2Ｃｕ3Ｏ7-xエピタキシアル
薄膜６上に形像化（パタニング）する。Next, a microwave band pass filter design, analysis theory and simulation (Touchstone)
TM), which has an optimal pattern (plan view of FIG. 2) on which the transferred electron beam-mask and photolithography (Photolithography) used in manufacturing a semiconductor element.
Hic) process and wet etching process are applied to pattern the 4-pole band pass filter pattern on the YBa 2 Cu 3 O 7-x epitaxial thin film 6.
【００３７】即ち、実験室用小型のスピンコ−ト装置
（Ｓｐｉｎｃｏａｔｅｒ）のヘッドにＹＢａ2Ｃｕ3Ｏ
7-xエピタキシアル薄膜６を成長させた単結晶基板４を
位置させて、ＨＭＤＳ（ヘキサメチルジシラゼン：Ｈｅ
ｘａｍｅｔｈｙｌｄｉｓｉｌａｚｅｎ）を塗布しスピン
（Ｓｐｉｎｎｉｎｇ）させ、エピタキシアル薄膜６の表
面をきれいにした後、フォトレジスト（Ｐｈｏｔｏｒｅ
ｓｉｓｔ）膜７を４０００ｒｐｍの回転速度で３０秒間
スピン（Ｓｐｉｎｎｉｎｇ）させて均一に塗布する。That is, YBa 2 Cu 3 O was applied to the head of a small laboratory spin coater (Spincoater).
The single crystal substrate 4 on which the 7-x epitaxial thin film 6 is grown is positioned, and HMDS (hexamethyldisilazene: He)
After applying xametyldilazen) and spinning (Spinning) to clean the surface of the epitaxial thin film 6, a photoresist (Photore
Sist) The film 7 is spin-coated at a rotation speed of 4000 rpm for 30 seconds to be uniformly applied.
【００３８】そしてソフトベ−キング（Ｓｏｆｔ ｂａ
ｋｉｎｇ）：８５℃、５分間の工程を通してＰＲ膜７を
硬化させた後、ＰＲ膜７で覆われた試料を実験室用接触
整列器（ｃｏｎｔａｃｔ ａｌｉｇｎｅｒ）上において
高温超伝導エピタキシアル６とマイクを整列させた後１
００Ｗ用ＵＶ光源（Ｓｏｕｒｃｅ）に５分間露光させ
る。Then, soft baking (Soft ba)
After curing the PR film 7 through a process of 85 ° C. for 5 minutes, the sample covered with the PR film 7 was placed on a laboratory contact aligner to obtain a high temperature superconducting epitaxial film 6 and a microphone. After aligning 1
It is exposed to a UV light source (Source) for 00W for 5 minutes.
【００３９】露光された試料をＡＺ−３５１現像液（ｄ
ｅｖｅｌｏｐｅｒ）で１０−３０秒程度に処理して感光
されたＰＲ膜７を除去した後、蒸留水で素子表面を洗浄
する。The exposed sample was treated with AZ-351 developer (d
After removing the exposed PR film 7 by treating the surface of the element with distilled water for about 10 to 30 seconds, the surface of the element is washed with distilled water.
【００４０】この場合、湿式蝕刻の時にはＥＤＴＡ（酢
酸類）で蝕刻を行ない（化学蝕刻）、乾式蝕刻の時には
ＥＣＲのイオンミリング（ｉｏｎ ｍｉｌｌｉｎｇ）装
備で蝕刻を行なう（物理蝕刻）。In this case, during wet etching, EDTA (acetic acid) is used for etching (chemical etching), and during dry etching, ECR is performed using ion milling equipment (physical etching).
【００４１】上記において、ＥＣＲ（Ｅｌｅｃｔｒｏｎ
Ｃｙｃｌｏｔｒｏｎ Ｒｅｓｏｎａｎｃｅ）−イオン
ミリング（ｉｏｎ ｍｉｌｌｉｎｇ）装備は、２１５Ｇ
Ｈｚ／５００Ｗマイクロ波生成用ソ−ス（Ｓｏｕｒｃ
ｅ）と四角形ホーン（ｈｏｒｎ）状のキャビティ（Ｃａ
ｖｉｔｙ），ＥＣＲ−プラズマソ−ス（ｐｌａｓｍａＳ
ｏｕｒｃｅ），８００Ｇａｕｓｓ用電磁石などで構成さ
れている。そして、生成させた酸素又はアルゴンイオン
を加速させ、エピタキシアル薄膜の表面をミリング（ｍ
ｉｌｌｉｎｇ）することにより単結晶基板表面の平坦度
（ｆｌａｔｎｅｓｓ）を向上させたり、乾式蝕刻を行っ
たり、ＰＲ膜を除去したあと回路パターンの鋭利度（Ｓ
ｈａｒｐｎｅｓｓ）をよくさせるために使用する。In the above, ECR (Electron
Cyclotron Resonance) -Ion milling equipment is 215G
Hz / 500W microwave generation source (Source)
e) and a rectangular horn-shaped cavity (Ca)
, ECR-plasma source (plasmaS)
source), an 800 Gauss electromagnet, and the like. Then, the generated oxygen or argon ions are accelerated to mill the surface of the epitaxial thin film (m
The flatness (flatness) of the surface of the single crystal substrate is increased by illing, dry etching is performed, or after the PR film is removed, the sharpness of the circuit pattern (S
It is used to improve the harness.
【００４２】蝕刻が終るとフィルタパターン２の鋭利度
を高め、感光がされなかったＰＲ膜７や其の他の不純物
などを除去するために蒸留水（ＤＩ−ｗａｔｅｒ）とア
セトンで素子を洗浄した後、ハ−ドベ−キング（ｈａｒ
ｄ ｂａｋｉｎｇ）工程を５分程度行ない、高温超伝導
帯域通過フィルタのパタニング工程を終える。After the etching, the sharpness of the filter pattern 2 is increased, and the element is washed with distilled water (DI-water) and acetone in order to remove the PR film 7 which is not exposed to light and other impurities. After that, hard baking (har
The d baking process is performed for about 5 minutes to complete the patterning process of the high temperature superconducting bandpass filter.
【００４３】次いで接地平面を製造するために、パター
ンされた高温超伝導パターン６の反対側、即ち、単結晶
基板４の裏面に、電子線蒸発器を使用し１０~2Ｔｏｒｒ
程度の真空度と５００℃程度の温度を有する真空チェン
バ内で、Ｔｉ／Ａｇ２重薄膜５を蒸着する。Next, in order to manufacture a ground plane, on the opposite side of the patterned high-temperature superconducting pattern 6, that is, on the back surface of the single crystal substrate 4, an electron beam evaporator is used to obtain 10 to 2 Torr.
The Ti / Ag double thin film 5 is deposited in a vacuum chamber having a vacuum degree of about 500 ° C. and a temperature of about 500 ° C.
【００４４】Ｔｉ／Ａｇ２重薄膜５は、ＭｇＯ又はＬａ
ＡｌＯ3単結晶基板４と接着が大体良好であり、たやす
く蒸着し得るだけでなく、高温超伝導ＹＢａ2Ｃｕ3Ｏ
7-xエピタキシアル薄膜６にもほぼ影響を及ぼさない。The Ti / Ag double thin film 5 is made of MgO or La.
Adhesion to AlO 3 single crystal substrate 4 is generally good, not only easy vapor deposition but also high temperature superconducting YBa 2 Cu 3 O
It has almost no effect on the 7-x epitaxial thin film 6.
【００４５】特に、薄膜蒸着時接着剤として銀−ペース
ト（Ａｇ−ｐａｓｔｅ）を主として使用するために接地
平面蒸着時銀薄膜を使用すれば他の物質の汚染を最大に
防止し得る利点を有している。In particular, since silver-paste is mainly used as an adhesive during thin film deposition, the use of a silver thin film during ground plane deposition has the advantage of maximally preventing the contamination of other substances. ing.
【００４６】そして、銀薄膜はマイクロ波特性だけでな
く電気伝導性も非常に優秀であり、パッケージに構成す
る場合試験治具（ｔｅｓｔ−ｊｉｇ）内部の底との優れ
た接触と整合を成すことにも有利である。The silver thin film is excellent not only in microwave characteristics but also in electrical conductivity, and has excellent contact and matching with the bottom inside the test jig when it is packaged. It is also advantageous.
【００４７】以上の工程を経ると１２ＧＨｚ用平行結合
線及び傾斜の平行結合線方式の高温超伝導４極帯域通過
フィルタが完成される。After the above steps, a high-temperature superconducting 4-pole bandpass filter of 12 GHz parallel coupling line and inclined parallel coupling line type is completed.
【００４８】上記において製作された１２ＧＨｚ用高温
伝導４極帯域通過フィルタの低温マイクロ波特性は、マ
イクロ波特性が優秀なＫ−型コネクター（２．９ｍｍ
φ，−４０ＧＨｚ、ｗｉｌｔｒｏｎ社製品）を中間成分
であるハウジングに附着させた後３−成分試験治具（ｔ
ｅｓｔ−ｊｉｇ）にて測定した。The low-temperature microwave characteristics of the high-temperature conduction four-pole bandpass filter for 12 GHz manufactured as described above are K-type connectors (2.9 mm) having excellent microwave characteristics.
φ, -40 GHz, product of Wiltron) is attached to the housing, which is an intermediate component, and then a three-component test jig (t
est-jig).
【００４９】本発明に従うマイクロ波用高温超伝導４極
帯域通過フィルタは、良質の高温超伝導薄膜を利用した
平行結合線及び傾斜の平行結合線方式の伝送線素子なの
で、製作もＭＭＩＣ（Ｍｏｎｏｌｉｔｈｉｃ Ｍｉｃｒ
ｏｗａｖｅ Ｉｎｔｅｇｒａｔｅｄ Ｃｉｒｃｕｉｔ
ｓ）より簡単でかつ高温超伝導体の無損失、無抵抗の特
性を利用するために優秀な性能及び信頼度をもつマイク
ロ波核心素子である。Since the high-temperature superconducting 4-pole bandpass filter for microwaves according to the present invention is a parallel-coupling line and inclined parallel-coupling line type transmission line element utilizing a high-quality high-temperature superconducting thin film, it is manufactured by an MMIC (Monolithic Micro).
owave Integrated Circuit
s) It is a microwave core device having superior performance and reliability because it is simpler and utilizes the lossless and resistanceless characteristics of high temperature superconductors.
【００５０】更に、本発明に従うマイクロ波用高温超伝
導、４極帯域通過フィルタは従来の２−極帯域通過フィ
ルタよりパターンの大きさは若干大きいが、特性が電算
模写結果と一致した。Further, the high-temperature superconducting four-pole bandpass filter for microwaves according to the present invention has a slightly larger pattern size than the conventional two-pole bandpass filter, but the characteristics are in agreement with the computer simulation results.
【００５１】特に入力信号の通過帯域（ｐａｓｓｂａｎ
ｄ）両端の阻止帯域（ｓｔｏｐｂａｎｄ）が多く増加す
るだけでなくスカ−ト（ｓｋｉｒｔ）特性がさらに優秀
であり、通過帯域の挿入損失は０．５ｄＢ以下で非常に
小さく、リップルも全く発生されない平坦な通過帯域
（ｐａｓｓｂａｎｄ）を有する優秀な４極帯域通過フィ
ルタであることを見せた。In particular, the pass band of the input signal
d) Not only the stop band at both ends increases, but also the skirt characteristic is more excellent, the insertion loss in the pass band is 0.5 dB or less, which is very small, and the ripple is not generated at all. It has been shown to be an excellent 4-pole bandpass filter with a large passband.
【００５２】一方、フィルタとして使用される高温超伝
導ＹＢａ2Ｃｕ3Ｏ7-xエピタキシアル薄膜は、Ｔｃ＞８
０Ｋ級であり、接地平面にて使用したＴｉ／Ａｇ２重薄
膜（９９．９９％の純度）は、電子線蒸発器で５００
℃、真空で蒸着した種々の金属薄膜の中でもっとも優秀
な特性を見せた。On the other hand, the high temperature superconducting YBa 2 Cu 3 O 7-x epitaxial thin film used as a filter has Tc> 8.
The Ti / Ag double thin film (99.99% purity) used on the ground plane is 0K class, and it is 500 in the electron beam evaporator.
It showed the most excellent characteristics among various metal thin films deposited at ℃ and vacuum.
【００５３】[0053]
【発明の効果】本発明を利用すれば電波高度利用技術と
関連したマイクロ波通信システムのサブシステム（部
品）の小型化に寄与し得るし、情報通信システムの性能
を向上し得る効果を得ることができる。EFFECTS OF THE INVENTION By utilizing the present invention, it is possible to contribute to the miniaturization of the subsystem (component) of the microwave communication system related to the advanced radio wave utilization technology and to obtain the effect of improving the performance of the information communication system. You can
【００５４】一方、高温超伝導エピタキシアル薄膜を使
用するために、軽薄短小し高性能を備えた通信部品を製
作することができ、次世代マイクロ波移動通信、衛星通
信及び衛星放送用（２７ＧＨｚ以下）に所要される新機
能、新構造の種々のマイクロ波素子及び回路の創出研究
にも甚大な効果を得ることができる。On the other hand, since the high-temperature superconducting epitaxial thin film is used, it is possible to fabricate a communication component having a light, thin, short, small size and high performance, for the next-generation microwave mobile communication, satellite communication and satellite broadcasting (27 GHz or less). ), A great effect can be obtained also in the research of creation of various microwave devices and circuits having new functions and new structures.
【００５５】付け加えて、急増する電波サービスの需要
に能動的に対処し得る優秀なマイクロ波通信システムの
開発も期待することができる。In addition, it is possible to expect the development of an excellent microwave communication system capable of actively coping with the rapidly increasing demand for radio service.
【図１】本発明の一実施例に従う平行結合線方式の高温
超伝導４極帯域通過フィルタの平面図。FIG. 1 is a plan view of a parallel coupled wire type high temperature superconducting four-pole bandpass filter according to an embodiment of the present invention.
【図２】本発明の他の実施例に従う傾斜平行結合線方式
の高温超伝導４極帯域通過フィルタの平面図。FIG. 2 is a plan view of a high-temperature superconducting quadrupole bandpass filter of the inclined parallel coupling line type according to another embodiment of the present invention.
【図３】（Ａ）〜（Ｅ）は本発明の製造工程別の概略
図。3 (A) to 3 (E) are schematic views for each manufacturing process of the present invention.
１ 信号伝送用入力端 ２ 平行結合線方式の４極帯域通過フィルタパターン ３ 信号伝送用出力端 ４ 単結晶基板 ５ 接地平面用薄膜 1 signal transmission input end 2 parallel coupling wire type 4-pole band pass filter pattern 3 signal transmission output end 4 single crystal substrate 5 ground plane thin film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 安 達 大韓民国忠浦南都天眼市城停洞141−３フ ァリム１次アパート503 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor, Adachi 141-3, Falim Primary Apartment 503, 141-3 Seongdong-dong, Tianye-si, Namdu, Chungpo, South Korea
Claims (7)
板；上記単結晶基板の上部表面上の一側に、高温超伝導
薄膜を使用しマイクロストリップ線より形成され、入力
用コネクタと連結され外部よりマイクロ波信号を受ける
入力端；上記単結晶基板の上部表面上の他側に、上記入
力端と同一な高温超伝導体を使用しマイクロストリップ
線にて形成され、出力用コネクタと連結されフィルタリ
ングされた信号を外部へ出力する出力端；及び上記単結
晶基板の上部表面上の上記入力端及び出力端の間に同一
な高温超伝導体で上記入力端及び出力端と整合され電気
的に連結されるように形成し、所定周波数を通過させる
ために長さと通過帯域の帯域幅に従う幅及び間隔を有す
る結合線にて構成され上記入力端から入力される信号を
フィルタリングし、上記出力端にて出力するフィルタパ
ターンを含む高温超伝導マイクロ波４極帯域通過フィル
タ。1. A single crystal substrate having an upper surface and a lower surface; a high temperature superconducting thin film is used to form a microstrip line on one side of the upper surface of the single crystal substrate and is connected to an input connector. Input terminal for receiving more microwave signal; formed on the other side of the upper surface of the single crystal substrate with the same high-temperature superconductor as the input terminal with a microstrip line, connected to an output connector and filtered An output end for outputting the generated signal to the outside; and an identical high temperature superconductor between the input end and the output end on the upper surface of the single crystal substrate, which are aligned with and electrically connected to the input end and the output end. Is formed as described above, and is configured by a coupling line having a length and a width and a spacing according to the bandwidth of the pass band to pass a predetermined frequency, and filters a signal input from the input end, A high-temperature superconducting microwave 4-pole bandpass filter including a filter pattern output at the output end.
マイクロ波４極帯域通過フィルタ。2. The high temperature superconducting microwave quadrupole bandpass filter according to claim 1, wherein the number of the coupled lines is four.
び接触のための接地平面用薄膜をさらに含む高温超伝導
マイクロ波４極帯域通過フィルタ。3. The high temperature superconducting microwave quadrupole bandpass filter according to claim 1, further comprising a ground plane thin film on the lower surface of the single crystal substrate for electrical matching and contact with a test jig.
導マイクロ波４極帯域通過フィルタ。4. The high-temperature superconducting microwave quadrupole bandpass filter according to claim 3, wherein the ground plane thin film is made of Ag / Ti.
たパターンのマイクロストリップ線にて形成される高温
超伝導マイクロ波４極帯域通過フィルタ。5. The high-temperature superconducting microwave quadrupole bandpass filter according to claim 1, wherein the filter pattern is formed by a microstrip line having an inclined pattern for increasing integration.
−Ｃａ−Ｃｕ−Ｏ系、Ｔｌ−Ｓｒ−Ｃａ−Ｃｕ−Ｏ系、
及びＬａ−Ｃｕ−Ｏ系で構成されたグループから選択さ
れた一種より形成されることを特徴とするマイクロ波帯
域通過フィルタ。6. The high-temperature superconductor according to claim 1, wherein the high-temperature superconductor is Y—Ba—Cu—O system, Bi—Sr.
-Ca-Cu-O system, Tl-Sr-Ca-Cu-O system,
And a microwave bandpass filter formed of one kind selected from the group consisting of La-Cu-O system.
ＮｄＧａＯ3、Ａｌ2Ｏ3、ＹＳＺ（ＺｒＯ2）、ＬｉＮｂ
Ｏ3、ＭｇＦ、ＧＧＧ（ガドリニウムガリウムガーネッ
ト：Ｇａｄｏｌｉｎｉｕｍ Ｇａｌｌｉｕｍ Ｇａｒｎ
ｅｔ）、及びＭｇＡｌＯ3で構成されたグループから選
択された一種より形成されることを特徴とするマイクロ
波帯域通過フィルタ。7. The method according to claim 1, wherein the single crystal substrate is SrTiO 3 , MgO, LaAlO 3 ,
NdGaO 3 , Al 2 O 3 , YSZ (ZrO 2 ), LiNb
O 3 , MgF, GGG (Gadolinium Gallium Garn)
et), and a microwave bandpass filter formed of one kind selected from the group consisting of MgAlO 3 .
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR94-30105 | 1994-11-16 | ||
| KR94-30104 | 1994-11-16 | ||
| KR1019940030104A KR960019822A (en) | 1994-11-16 | 1994-11-16 | Method for manufacturing high temperature superconducting 4-pole-bandpass filter of inclined parallel coupling line type for microwave |
| KR1019940030105A KR960019823A (en) | 1994-11-16 | 1994-11-16 | Method for manufacturing high temperature superconducting 4-pole-bandpass filter of microwave |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08222907A true JPH08222907A (en) | 1996-08-30 |
Family
ID=26630696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29842795A Withdrawn JPH08222907A (en) | 1994-11-16 | 1995-11-16 | High temperature superconducting microwave 4-pole bandpass filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08222907A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860967A (en) * | 2018-12-11 | 2019-06-07 | 合肥本源量子计算科技有限责任公司 | Microstrip Bandpass Filter |
-
1995
- 1995-11-16 JP JP29842795A patent/JPH08222907A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860967A (en) * | 2018-12-11 | 2019-06-07 | 合肥本源量子计算科技有限责任公司 | Microstrip Bandpass Filter |
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