JPH0822979A - Method and apparatus for substance treatment - Google Patents
Method and apparatus for substance treatmentInfo
- Publication number
- JPH0822979A JPH0822979A JP6177735A JP17773594A JPH0822979A JP H0822979 A JPH0822979 A JP H0822979A JP 6177735 A JP6177735 A JP 6177735A JP 17773594 A JP17773594 A JP 17773594A JP H0822979 A JPH0822979 A JP H0822979A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ions
- magnetic field
- plasma
- neutral particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000000126 substance Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 150000002500 ions Chemical class 0.000 claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 35
- 230000007935 neutral effect Effects 0.000 claims abstract description 33
- 230000033001 locomotion Effects 0.000 claims abstract description 11
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000003672 processing method Methods 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims description 2
- 230000004907 flux Effects 0.000 abstract description 9
- 239000010453 quartz Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 238000006386 neutralization reaction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、基板処理方法および基
板処理装置に関し、特に、半導体装置の製造工程等にお
いて用いられる、中性粒子ビームを利用したドライエッ
チング方法等の基板処理方法およびその装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method and a substrate processing apparatus, and more particularly to a substrate processing method such as a dry etching method utilizing a neutral particle beam and its apparatus used in a manufacturing process of semiconductor devices. It is about.
【０００２】[0002]
【従来の技術】半導体装置の製造工程におけるエッチン
グ技術としては現在ドライ法が主流となっており、中で
もＲＩＥ（Reactive Ion Etching）法と呼ばれる物理的
手段と化学的手段とを併用したエッチング方法が多用さ
れている。これは、例えば、平行平板の電極間にＣＣｌ
2 Ｆ2 等の反応ガスを供給し、一方の電極にＲＦ電圧を
印加して高周波グロー放電によりガスをプラズマ化し、
発生したイオンおよびラジカルにより半導体基板（ウェ
ハ）を処理するものである。2. Description of the Related Art A dry method is currently the mainstream as an etching technique in the manufacturing process of semiconductor devices, and in particular, an etching method called RIE (Reactive Ion Etching) method that uses both physical and chemical means is frequently used. Has been done. This is due to, for example, CCl between parallel plate electrodes.
The reaction gas such as 2 F 2 is supplied, and the RF voltage is applied to one of the electrodes to turn the gas into plasma by high frequency glow discharge,
The semiconductor substrate (wafer) is processed by the generated ions and radicals.
【０００３】このように従前のドライ法においては、イ
オンを半導体基板に照射するものであるため、基板表面
に入射されたイオンにより絶縁膜にチャージアップが起
こり、膜質の低下を招くという問題がある。また、被処
理基板の形状により電場の乱れが発生して精度の高い加
工ができなかったり、いわゆるマイクロローディング効
果により微細な加工が困難になるという問題もある。As described above, in the conventional dry method, since the semiconductor substrate is irradiated with ions, there is a problem that the ions incident on the surface of the substrate cause charge-up in the insulating film, resulting in deterioration of film quality. . In addition, there are problems that the electric field is disturbed due to the shape of the substrate to be processed and high-precision processing cannot be performed, or that fine processing is difficult due to a so-called microloading effect.
【０００４】そこで、電気的に中性な粒子を用いて基板
処理を行う方式が提案され、開発が進められている。図
２は、この種従来の基板処理装置の概略構成図である。
この従来例では、同図に示すように、イオン源２１内に
ガス供給管２６を通じて希ガスを導入し、マイクロ波導
波管２２より放電管２３内にマイクロ波を供給してイオ
ン源２１内にプラズマを生成し、イオンビーム引き出し
電極２４、２５に正、負の電圧を印加してイオンビーム
を引き出し、真空槽２７内において数１００ｅＶに加速
する。そして、真空槽２７を通過するイオンはその一部
がここで電荷交換反応により中性化された後、中性ビー
ム透過電極２８を透過して試料台３１上の試料３０に衝
突して試料に所定の処理を加える。中性化されなかった
イオンは中性ビーム透過電極により透過が阻止される。
反応性ガス供給口２９からは反応性ガスを供給すること
ができる。なお、この種基板処理装置は、例えば、特開
昭６３−３１８０５８号公報により公知となっている。Therefore, a method of processing a substrate using electrically neutral particles has been proposed and is being developed. FIG. 2 is a schematic configuration diagram of a conventional substrate processing apparatus of this type.
In this conventional example, as shown in the figure, a rare gas is introduced into the ion source 21 through the gas supply pipe 26, and microwaves are supplied from the microwave waveguide 22 into the discharge tube 23 so that the ion source 21 is supplied with microwaves. Plasma is generated, and positive and negative voltages are applied to the ion beam extraction electrodes 24 and 25 to extract the ion beam, which is accelerated in the vacuum chamber 27 to several hundred eV. Then, after a part of the ions passing through the vacuum chamber 27 is neutralized by the charge exchange reaction, the ions pass through the neutral beam transmission electrode 28 and collide with the sample 30 on the sample table 31 to become a sample. Add predetermined processing. Ions that have not been neutralized are blocked by the neutral beam transmission electrode.
Reactive gas can be supplied from the reactive gas supply port 29. This type of substrate processing apparatus is known from, for example, Japanese Patent Laid-Open No. 63-318058.
【０００５】[0005]
【発明が解決しようとする課題】上述した従来の基板処
理方式は以下のような問題を含むものであった。第１
に、前述の方式では、イオンの中性化が真空槽での密度
の小さい残留気体との衝突による電荷交換反応を利用す
るものであるために、十分に高い粒子束密度の中性粒子
ビームが得られなかった。第２に、イオン源から引き出
されたイオンは被加工基板に向かって飛行する途中で発
散する特徴がある。而して、中性化の前後でイオンと中
性粒子の速さと方向は変わることはなく、そして電場や
磁場によって中性粒子の飛行方向は制御できないため、
基板に到達する中性粒子の入射角は基板に対して垂直に
揃えることができなかった。第３に、中性粒子の運動エ
ネルギーが数１００ｅＶになるため、被処理基板に誘起
される損傷が大きくなる。イオンの加速電圧を低くすれ
ば損傷は軽減されるが第２の問題点はさらに悪化するた
め、実用上数１００ｅＶ以下とすることはできない。The conventional substrate processing system described above has the following problems. First
In the above method, since the neutralization of the ions utilizes the charge exchange reaction due to the collision with the low-density residual gas in the vacuum chamber, the neutral particle beam with sufficiently high particle flux density is used. I couldn't get it. Secondly, the ions extracted from the ion source are characterized in that they diffuse during the flight toward the substrate to be processed. Thus, the speed and direction of ions and neutral particles do not change before and after neutralization, and the flight direction of neutral particles cannot be controlled by an electric field or magnetic field,
The incident angle of the neutral particles reaching the substrate could not be aligned perpendicular to the substrate. Thirdly, since the kinetic energy of the neutral particles becomes several hundred eV, damage induced on the substrate to be processed becomes large. Although the damage can be reduced by lowering the acceleration voltage of the ions, the second problem is further aggravated, and therefore it cannot be practically set to several hundred eV or less.
【０００６】したがって、本発明の解決すべき課題は、
平行性が良好で粒子束密度の大きい中性粒子を低エネル
ギーで被処理基板に供給できるようにすることであり、
このことにより、処理速度および加工精度の向上を図る
とともに被処理基板に与える損傷を軽減化しようとする
ものである。Therefore, the problems to be solved by the present invention are as follows.
It is to enable neutral particles with good parallelism and large particle bundle density to be supplied to a substrate to be processed with low energy,
As a result, the processing speed and processing accuracy are improved, and damage to the substrate to be processed is reduced.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
に、本発明によれば、プラズマイオン源を用い、電荷交
換反応を利用して中性粒子ビームを形成し、これにより
基板を処理する方法において、プラズマに一様な磁場を
印加してイオンを円運動させ、該イオンの円運動の接線
方向に放出される中性粒子を長手方向が磁場に平行なス
リットを介して基板に照射することを特徴とする基板処
理方法、が提供される。そして、好ましくは上記スリッ
トは２重になされる。In order to solve the above problems, according to the present invention, a plasma ion source is used to form a neutral particle beam by utilizing a charge exchange reaction, thereby treating a substrate. In the method, a uniform magnetic field is applied to plasma to cause circular motion of ions, and neutral particles emitted in a tangential direction of the circular motion of the ions are applied to a substrate through a slit whose longitudinal direction is parallel to the magnetic field. A substrate processing method characterized by the above is provided. And, preferably, the slit is doubled.
【０００８】[0008]
【作用】第１および第３の問題を解決するために、本発
明ではプラズマ領域内で起こる電荷交換反応を利用す
る。中性粒子ビーム形成装置の真空漕内ではプラズマ領
域が最もガス圧が高いためイオンの中性化率が大きくな
る。また、プラズマ領域内ではイオンと同種の中性原
子、分子間の共鳴電荷交換反応も起こるため、それも中
性化率を大きくすることに寄与する。外部磁場乃至外部
電場がなければイオンはプラズマ内でランダムに運動す
るため、中性化の後ではプラズマ領域から全方向に発散
して平行な中性粒子ビームが得られない。ところが、プ
ラズマを一様な磁場中に置くとローレンツ力が向心力と
なってイオンは磁束の回りに円運動を始める。その接線
速度はプラズマのイオン温度で決まる。In order to solve the first and third problems, the present invention utilizes the charge exchange reaction occurring in the plasma region. In the vacuum chamber of the neutral particle beam forming apparatus, the gas pressure is highest in the plasma region, so that the ion neutralization rate becomes large. Further, in the plasma region, a resonance charge exchange reaction between neutral atoms and molecules of the same kind as the ions also occurs, which also contributes to increasing the neutralization rate. Without an external magnetic field or electric field, the ions move randomly in the plasma, and after neutralization, they diverge from the plasma region in all directions and a parallel neutral particle beam cannot be obtained. However, when the plasma is placed in a uniform magnetic field, the Lorentz force becomes a centripetal force, and the ions start circular motion around the magnetic flux. The tangential velocity is determined by the ion temperature of the plasma.
【０００９】イオンを外部電場で故意に加速しないた
め、イオンの運動エネルギーは数ｅＶ乃至十数ｅＶ程度
である。磁束に垂直な速度成分を持ち、平行な速度成分
を持たないイオンは磁束に垂直な平面内で円運動する。
磁束に平行な速度成分も合わせ持つイオンは螺旋運動し
てプラズマ外に飛び出す。円運動するイオンはその軌道
上の至るところでプラズマ中の原子分子と遭遇して中性
化する。中性化の後、中性粒子は円軌道の接線方向に飛
行する。Since the ions are not intentionally accelerated by the external electric field, the kinetic energy of the ions is about several eV to ten and several eV. Ions that have a velocity component perpendicular to the magnetic flux but no parallel velocity component make circular motions in a plane perpendicular to the magnetic flux.
Ions that also have a velocity component parallel to the magnetic flux make a spiral motion and fly out of the plasma. Circularly moving ions encounter neutral atoms in the plasma everywhere on their orbits and are neutralized. After neutralization, the neutral particles fly tangentially to the circular orbit.
【００１０】プラズマ領域と被加工基板の間の隔壁にス
リットを設けておくと、これらの中性粒子をプラズマの
外に取り出すことができる。特に磁場と平行な長手穴を
二重に設けておくと、中性粒子ビームを磁場と直角方向
に帯状に取り出すことができる。これによって第２の問
題点も改善される。この帯状の中性粒子ビームを被処理
基板の半径または直径位置に照射して、被加工基板を回
転させることにより、あるいは被処理基板をビームに対
し垂直方向に移動させることにより基板の全面に中性粒
子を照射することができる。If a slit is provided in the partition wall between the plasma region and the substrate to be processed, these neutral particles can be taken out of the plasma. In particular, if double longitudinal holes are provided parallel to the magnetic field, the neutral particle beam can be taken out in a band shape in the direction perpendicular to the magnetic field. This also improves the second problem. The belt-shaped neutral particle beam is applied to the radius or diameter position of the substrate to be processed, and the substrate to be processed is rotated, or the substrate to be processed is moved in the direction perpendicular to the beam, so that the whole surface of the substrate is made to reach the center. Particles can be irradiated.
【００１１】[0011]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。図１は、本発明の一実施例の基板処理装置
を示す概略構成図である。この実施例は、Ｃｌ2 ビーム
によりシリコン等をエッチングする場合のものである。
真空容器３にガス導入バルブ１２からＣｌ2 ガスを導入
し、石英窓１０を通して導波管１１からマイクロ波を導
入して、真空容器３の内部にマイクロ波放電プラズマを
発生させる。真空容器３とそれを覆う真空容器２はそれ
ぞれ独立に真空ポンプ９と真空ポンプ８で排気される。Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a schematic configuration diagram showing a substrate processing apparatus according to an embodiment of the present invention. This embodiment is for etching silicon or the like with a Cl 2 beam.
Cl 2 gas is introduced into the vacuum container 3 from the gas introduction valve 12, and microwaves are introduced from the waveguide 11 through the quartz window 10 to generate microwave discharge plasma inside the vacuum container 3. The vacuum container 3 and the vacuum container 2 covering it are evacuated by a vacuum pump 9 and a vacuum pump 8 independently.
【００１２】真空容器２の外側からソレノイド１を用い
てマイクロ波の進行方向と直交する向きに磁場を印加す
る。磁束密度が０．０３８Ｔの時、１０ｅＶの並進エネ
ルギーのＣｌ2 +イオンは磁場に直交する面内で半径１０
cmの円軌道を描き、中性化して塩素分子となるとその接
線方向に飛び出す。A magnetic field is applied from the outside of the vacuum container 2 using a solenoid 1 in a direction orthogonal to the traveling direction of microwaves. When the magnetic flux density is 0.038T, Cl 2 + ions with a translational energy of 10 eV have a radius of 10 in the plane orthogonal to the magnetic field.
A circular orbit of cm is drawn, and when neutralized to become chlorine molecules, it jumps out in the tangential direction.
【００１３】磁場の方向と平行に開けた長さ２０cmのス
リット６からプラズマ領域外に出た幅２０ｃｍのＣｌ2
ビームを、さらに同様のスリット７を用いて帯状の中性
粒子ビームとして切り出し、８インチのシリコン基板４
の直径方向に照射した。シリコン基板を面内回転機能を
持つ基板保持機構５に保持してエッチングした。このよ
うに、ガス圧の高いプラズマ領域内での電荷交換反応で
生成するＣｌ2 を利用することにより、比較的大きな粒
子束密度の低エネルギーＣｌ2 ビームを得ることがで
き、基板をチャージアップさせることなく３０ｎｍ／ｍ
ｉｎのエッチングレートを得ることができた。ＧａＡｓ
の場合は５０ｎｍ／ｍｉｎのエッチングレートであり、
さらにＳｉＯ2 膜では１０ｎｍ／ｍｉｎのエッチングレ
ートであった。Cl 2 having a width of 20 cm, which is outside the plasma region, through a slit 6 having a length of 20 cm opened parallel to the direction of the magnetic field.
The beam is further cut out as a strip-shaped neutral particle beam by using the same slit 7, and an 8-inch silicon substrate 4
Was irradiated in the diametrical direction. The silicon substrate was held by the substrate holding mechanism 5 having an in-plane rotation function and etched. As described above, by using Cl 2 generated by the charge exchange reaction in the plasma region where the gas pressure is high, a low energy Cl 2 beam having a relatively large particle flux density can be obtained and the substrate is charged up. 30nm / m without
An etching rate of in could be obtained. GaAs
In the case of, the etching rate is 50 nm / min,
Further, the SiO 2 film had an etching rate of 10 nm / min.
【００１４】以上好ましい実施例について説明したが、
本発明は上記実施例に限定されるされるものではなく、
本願発明の要旨を逸脱しない範囲内において各種の変更
が可能である。例えば、実施例では、ハロゲン分子の中
性粒子を用いてエッチングを行う例について説明した
が、希ガス原子の中性粒子を基板に照射するようにし別
途反応性ガスを供給するようにしてもよい。また、本発
明はエッチング装置に有利に適用されるが、これに限定
されるものではなく、洗浄装置や成膜装置等の他の処理
装置にも適用が可能なものである。The preferred embodiment has been described above.
The present invention is not limited to the above embodiment,
Various modifications can be made without departing from the scope of the present invention. For example, in the embodiment, an example in which neutral particles of halogen molecules are used for etching has been described. However, neutral particles of rare gas atoms may be irradiated onto the substrate and a reactive gas may be separately supplied. . Further, although the present invention is advantageously applied to an etching apparatus, the present invention is not limited to this, and can be applied to other processing apparatuses such as a cleaning apparatus and a film forming apparatus.
【００１５】[0015]
【発明の効果】以上説明したように、本発明による基板
処理方法および装置は、プラズマイオン源に一様の磁場
を印加して円軌道の接線方向の中性粒子を得、これをス
リットを介して被処理基板に照射するものであるので、
シリコン等の半導体材料をチャージアップさせることな
く、極めて低損傷で処理を行うことが可能となる。ま
た、粒子束密度が高まりその基板に対する垂直性が改善
されたことにより、処理速度および加工精度の向上を図
ることができる。As described above, in the substrate processing method and apparatus according to the present invention, a uniform magnetic field is applied to the plasma ion source to obtain neutral particles in the tangential direction of the circular orbit, and the neutral particles are passed through the slit. Is to irradiate the substrate to be processed,
It is possible to perform processing with extremely low damage without charging up semiconductor materials such as silicon. Further, since the particle bundle density is increased and the perpendicularity to the substrate is improved, the processing speed and processing accuracy can be improved.
【図１】本発明の一実施例の概略構成図。FIG. 1 is a schematic configuration diagram of an embodiment of the present invention.
【図２】従来例の概略構成図。FIG. 2 is a schematic configuration diagram of a conventional example.
１ ソレノイド ２、３ 真空容器 ４ シリコン基板 ５ 基板保持機構 ６、７ スリット ８、９ 真空ポンプ １０ 石英窓 １１ 導波管 １２ ガス導入バルブ ２１ イオン源 ２２ マイクロ波導波管 ２３ 放電管 ２４、２５ イオンビーム引き出し電極 ２６ ガス供給口 ２７ 真空槽 ２８ 中性ビーム透過電極 ２９ 反応性ガス供給口 ３０ 試料台 ３１ 試料 1 Solenoid 2, 3 Vacuum container 4 Silicon substrate 5 Substrate holding mechanism 6, 7 Slit 8, 9 Vacuum pump 10 Quartz window 11 Waveguide 12 Gas introduction valve 21 Ion source 22 Microwave waveguide 23 Discharge tube 24, 25 Ion beam Extraction electrode 26 Gas supply port 27 Vacuum chamber 28 Neutral beam transmission electrode 29 Reactive gas supply port 30 Sample stage 31 Sample
Claims (5)
を利用して中性粒子ビームを形成し、これにより基板を
処理する方法において、プラズマに一様な磁場を印加し
てイオンを円運動させ、該イオンの円運動の接線方向に
放出される中性粒子を長手方向が磁場に平行なスリット
を介して基板に照射することを特徴とする基板処理方
法。1. A method of forming a neutral particle beam by utilizing a charge exchange reaction using a plasma ion source to process a substrate by the method, wherein a uniform magnetic field is applied to plasma to cause circular motion of ions. A substrate processing method comprising irradiating the substrate with neutral particles emitted in a tangential direction of a circular motion of the ions through a slit whose longitudinal direction is parallel to a magnetic field.
とを特徴とする請求項１記載の基板処理方法。2. The substrate processing method according to claim 1, wherein the slit is provided in double.
に一様な磁場を印加してプラズマ中のイオンを円運動さ
せる磁場印加手段と、該イオンの円運動の接線方向の延
長上に長手方向が磁場に平行なスリットが形成された１
乃至複数枚の隔壁と、前記スリットの後方に配置され
た、被処理基板を保持する基板保持機構と、を具備する
ことを特徴とする基板処理装置。3. A plasma generating means, a magnetic field applying means for applying a uniform magnetic field to the plasma generating region to circularly move the ions in the plasma, and a longitudinal direction on a tangential extension of the circular motion of the ions. 1 with a slit parallel to the magnetic field
A substrate processing apparatus comprising: a plurality of partition walls; and a substrate holding mechanism that is disposed behind the slit and holds a substrate to be processed.
利用したものであることを特徴とする請求項３記載の基
板処理装置。4. The substrate processing apparatus according to claim 3, wherein the plasma generating means uses microwaves.
は前記スリットの長手方向と直角の方向に移動する機能
を有していることを特徴とする請求項３記載の基板処理
装置。5. The substrate processing apparatus according to claim 3, wherein the substrate holding mechanism has an in-plane rotation function or a function of moving in a direction perpendicular to the longitudinal direction of the slit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6177735A JPH0822979A (en) | 1994-07-07 | 1994-07-07 | Method and apparatus for substance treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6177735A JPH0822979A (en) | 1994-07-07 | 1994-07-07 | Method and apparatus for substance treatment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0822979A true JPH0822979A (en) | 1996-01-23 |
Family
ID=16036213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6177735A Pending JPH0822979A (en) | 1994-07-07 | 1994-07-07 | Method and apparatus for substance treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0822979A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1083894A (en) * | 1996-07-31 | 1998-03-31 | Toyo Technol Inc | Apparatus and method for treating plasma for modifying substrate surface |
| JP2018098094A (en) * | 2016-12-15 | 2018-06-21 | 東京エレクトロン株式会社 | Plasma processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH025523A (en) * | 1988-06-24 | 1990-01-10 | Anelva Corp | Plasma treating device |
| JPH0227718A (en) * | 1988-07-15 | 1990-01-30 | Mitsubishi Electric Corp | Plasma treating method and plasma treater using the same method |
| JPH04237123A (en) * | 1991-01-22 | 1992-08-25 | Anelva Corp | Plasma processor |
-
1994
- 1994-07-07 JP JP6177735A patent/JPH0822979A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH025523A (en) * | 1988-06-24 | 1990-01-10 | Anelva Corp | Plasma treating device |
| JPH0227718A (en) * | 1988-07-15 | 1990-01-30 | Mitsubishi Electric Corp | Plasma treating method and plasma treater using the same method |
| JPH04237123A (en) * | 1991-01-22 | 1992-08-25 | Anelva Corp | Plasma processor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1083894A (en) * | 1996-07-31 | 1998-03-31 | Toyo Technol Inc | Apparatus and method for treating plasma for modifying substrate surface |
| JP2018098094A (en) * | 2016-12-15 | 2018-06-21 | 東京エレクトロン株式会社 | Plasma processing apparatus |
| US10825663B2 (en) | 2016-12-15 | 2020-11-03 | Tokyo Electron Limited | Plasma processing apparatus |
| US11450515B2 (en) | 2016-12-15 | 2022-09-20 | Tokyo Electron Limited | Plasma processing apparatus |
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