JPH0823068B2 - Thin film forming equipment - Google Patents
Thin film forming equipmentInfo
- Publication number
- JPH0823068B2 JPH0823068B2 JP63207032A JP20703288A JPH0823068B2 JP H0823068 B2 JPH0823068 B2 JP H0823068B2 JP 63207032 A JP63207032 A JP 63207032A JP 20703288 A JP20703288 A JP 20703288A JP H0823068 B2 JPH0823068 B2 JP H0823068B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- holding member
- guide groove
- thin film
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 14
- 230000003746 surface roughness Effects 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000005488 sandblasting Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 16
- 239000000428 dust Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はスパッタ蒸着法等に用いて、光ディスクや磁
気ディスク等を生産する薄膜形成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming apparatus for producing an optical disk, a magnetic disk or the like by using a sputtering deposition method or the like.
従来の技術 第３図は従来の薄膜形成装置を示す透視図である。同
図において、チャンバ20の中にはスパッタ用のターゲッ
ト21a,21bが設置されている。ターゲット21a,21bからス
パッタされた材料は、回転するパレット22に保持されて
いる基板23（23a,23b,23c）に付着して薄膜が形成され
る。また、第４図（ａ），（ｂ）はパレット22に基板23
が保持されている状態を拡大した側面図、及びこの側面
の断面を表した断面図である。同図において、パレット
30には基板31が装着されており、この基板31を装着し、
保持しながら基板31自身が回転できるように案内溝32が
設けられている。このような構成で、パレット30が回転
すると、基板31はパレット30の回転軸24を中心に公転
し、しかも案内溝32に装着されているのでこの案内溝32
に沿って自転する。Prior Art FIG. 3 is a perspective view showing a conventional thin film forming apparatus. In the figure, targets 21a and 21b for sputtering are installed in the chamber 20. The material sputtered from the targets 21a, 21b adheres to the substrate 23 (23a, 23b, 23c) held on the rotating pallet 22 to form a thin film. 4 (a) and 4 (b) show a pallet 22 and a substrate 23.
FIG. 3 is an enlarged side view showing a state in which is held, and a cross-sectional view showing a cross section of this side face. In the figure, the pallet
A substrate 31 is attached to 30, and this substrate 31 is attached,
A guide groove 32 is provided so that the substrate 31 itself can rotate while being held. With such a structure, when the pallet 30 rotates, the substrate 31 revolves around the rotation shaft 24 of the pallet 30 and is mounted in the guide groove 32.
Rotate along.
従来このような装置で基板に均一な膜厚の薄膜が形成
されていた。Conventionally, a thin film having a uniform thickness has been formed on a substrate by such an apparatus.
発明が解決しようとする課題 前記の薄膜形成装置において、第４図によると基板31
がパレット30の案内溝32の内面33（特に接触部34a,34b,
34c）で接しながら基板外周部と案内溝の内面とがすれ
て回転することになる。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention In the above thin film forming apparatus, according to FIG.
Is the inner surface 33 of the guide groove 32 of the pallet 30 (particularly the contact portions 34a, 34b,
While contacting at 34c), the outer peripheral portion of the substrate and the inner surface of the guide groove slip and rotate.
また、パレット30は普通、金属材料でできており、か
つパレット30に付着した薄膜が剥離し難くするために、
サンドブラスト処理されている。さらに、基板31が樹脂
材料であるときは、基板31の外周部が案内溝の内面33と
こすれて削れたりキズが多く発生する。基板31がこすれ
るとこの部分から多くの削りクズ（以下ダストという）
が発生し、このダストが基板31に付着したり、あるいは
飛散したりしたものが、基板31の内周表面に付着するよ
うになる。このため、形成された薄膜中にはダストが混
入し欠陥の多い膜が発生し、良質な膜の形成が困難であ
った。Further, the pallet 30 is usually made of a metal material, and in order to make it difficult for the thin film attached to the pallet 30 to peel off,
It has been sandblasted. Further, when the substrate 31 is made of a resin material, the outer peripheral portion of the substrate 31 rubs against the inner surface 33 of the guide groove and is often scraped or scratched. When the substrate 31 is rubbed, many scraps (hereinafter referred to as dust) are scraped from this part.
Then, the dust adheres to the substrate 31 or scatters, and adheres to the inner peripheral surface of the substrate 31. Therefore, dust is mixed in the formed thin film and a film with many defects is generated, which makes it difficult to form a high-quality film.
そこで、本発明は従来の装置がもつ以上のような課題
を解決し、実現容易な具体的構成を提供するものであ
る。Therefore, the present invention solves the above problems of the conventional device and provides a concrete configuration that is easy to realize.
課題を解決するための手段 上記の課題を解決するための本発明の技術的手段は以
下のようになる。すなわち、薄膜化しようとする材料を
蒸発させる蒸発手段と、この蒸発手段から蒸発する材料
が付着する基板を保持しながら回転する保持部材とを備
え、保持部材には基板を遊挿、かつ転動可能に保持し前
記保持部材の材料のみで構成した案内溝を具備し、前記
案内溝の前記保持部材の表面粗さをRmax1μｍ以下にし
た構成としている。Means for Solving the Problems The technical means of the present invention for solving the above problems are as follows. That is, an evaporation means for evaporating the material to be thinned and a holding member that rotates while holding the substrate on which the material evaporated from the evaporation means adheres are provided, and the substrate is loosely inserted and rolled in the holding member. A guide groove that is held as much as possible and is made of only the material of the holding member is provided, and the surface roughness of the holding member of the guide groove is set to Rmax 1 μm or less.
作 用 この技術的手段による作用は次のようになる。Operation The effects of this technical means are as follows.
すなわち、案内溝が基板と接触する部分の表面粗さを
Rmax1μｍ以下にすることで、基板と案内溝とが保持部
材の回転に伴ってこすれても、基板の削れ及び基板外周
部の薄膜が案内溝と当接することに起因する当該薄膜の
キズは発生しなくなる。That is, the surface roughness of the portion where the guide groove contacts the substrate
By setting the Rmax to 1 μm or less, even if the substrate and the guide groove are rubbed with the rotation of the holding member, the substrate is scraped and the thin film on the outer peripheral portion of the substrate is not scratched due to contact with the guide groove. Disappear.
実施例 以下、本発明の一実施例について、添付図面に基づい
て説明する。Embodiment Hereinafter, one embodiment of the present invention will be described with reference to the accompanying drawings.
第１図（ａ）及び（ｂ）は、本発明の実施例を示す斜
視図及び部分拡大断面の斜視図である。1 (a) and 1 (b) are a perspective view and a partially enlarged sectional perspective view showing an embodiment of the present invention.
同図において、スパッタターゲット１（1a,1b）より
蒸発した材料は、回転する保持部材２の案内溝４中で保
持された基板３（3a,3b,3c,3d）に付着して薄膜が形成
される。保持部材２には基板３を保持しながら、基板３
自身が回転できるように基板３の厚さよりも若干広くし
た案内溝４が設けられている。In the figure, the material evaporated from the sputter target 1 (1a, 1b) adheres to the substrate 3 (3a, 3b, 3c, 3d) held in the guide groove 4 of the rotating holding member 2 to form a thin film. To be done. While holding the substrate 3 on the holding member 2, the substrate 3
A guide groove 4 which is slightly wider than the thickness of the substrate 3 is provided so that it can rotate.
保持部材２が回転すると、案内溝４に装着された基板
３は、案内溝４に沿って転動することになる。ここで、
案内溝４の内径は基板３の外径よりも大きいため、保持
部材２が１回転すると、基板３は１回転以上自転するこ
とになる。つまり、保持部材２の回転と基板３の自転と
の位相を変えることによって、薄膜の膜厚均一性を得て
いる。When the holding member 2 rotates, the substrate 3 mounted in the guide groove 4 rolls along the guide groove 4. here,
Since the inner diameter of the guide groove 4 is larger than the outer diameter of the substrate 3, when the holding member 2 makes one rotation, the substrate 3 rotates about one rotation or more. That is, the film thickness uniformity of the thin film is obtained by changing the phase between the rotation of the holding member 2 and the rotation of the substrate 3.
ところが、基板３が案内溝４を転動すると、基板３の
外周部が案内溝４の内面５とこすれることになるが、本
実施例では内面５の表面粗さをRmax1μｍ以下にしてい
るため、基板３の外周部にキズやダストを発生しなくで
きる。However, when the substrate 3 rolls in the guide groove 4, the outer peripheral portion of the substrate 3 rubs against the inner surface 5 of the guide groove 4, but in this embodiment, the surface roughness of the inner surface 5 is Rmax 1 μm or less. It is possible to prevent generation of scratches and dust on the outer peripheral portion of the substrate 3.
従って、本実施例では、基板３と案内溝４とがこすれ
ても、内面６の表面粗さをRmax1μｍ以下にすること
で、こすれによる基板のキズやダスト、及び基板の外周
部の薄膜が案内溝に当接することに起因した当該薄膜の
キズの発生を防止できる。その結果、ダストが飛散し
て、基板３の表面に付着することを防止でき、異物混入
及びキズの無い良質な薄膜を形成できる。Therefore, in the present embodiment, even if the substrate 3 and the guide groove 4 are rubbed, by setting the surface roughness of the inner surface 6 to Rmax 1 μm or less, the scratches and dust on the substrate due to the rub and the thin film on the outer peripheral portion of the substrate are guided. It is possible to prevent the thin film from being scratched due to the contact with the groove. As a result, it is possible to prevent dust from scattering and adhering to the surface of the substrate 3, and it is possible to form a high-quality thin film free from foreign matter and scratches.
なお、ターゲット1a、1bの材料は、スパッタにより基
板３以外にも保持部材２の案内溝４以外の表面にも付着
堆積し堆積膜を形成する。この堆積膜が保持部材２表面
から剥離し異物として基板３または基板３上に成膜する
薄膜に再付着することにより、基板３に成膜する薄膜の
膜質を劣化させる。The materials of the targets 1a and 1b are deposited and deposited on the surfaces of the holding member 2 other than the guide grooves 4 by sputtering to form a deposited film. The deposited film is peeled from the surface of the holding member 2 and reattached as foreign matter to the substrate 3 or the thin film formed on the substrate 3, thereby deteriorating the film quality of the thin film formed on the substrate 3.
このような堆積膜に起因した薄膜の膜質劣化を防止す
るために、堆積膜をできるだけ保持部材２から剥離し難
くすることが有効であり、その具体的手段としては、保
持部材２の案内溝４以外の表面粗度を大きくする手法で
ある。In order to prevent deterioration of the quality of the thin film due to such a deposited film, it is effective to prevent the deposited film from peeling off from the holding member 2 as much as possible. As a concrete means thereof, the guide groove 4 of the holding member 2 is used. It is a method of increasing the surface roughness other than.
すなわち、案内溝４以外の保持部材２表面粗度を大き
くすると、保持部材２上にスパッタされたターゲット1
a,1bの材料が堆積膜として付着する付着面積を増大させ
ることで当該堆積膜を剥離し難くでき、保持部材２の案
内溝４以外に付着した堆積膜が剥離し基板３表面に再付
着することに伴う基板３の薄膜中の異物発生を防止で、
良好な膜質を有する薄膜が得られると同時に、後述する
サンドブラスト加工による堆積膜の定期的除去回数も低
減できるため、製造効率が向上し好ましい。なお、この
保持部材２の表面粗さはRmax4μｍ以上にすると効果が
顕著であった。That is, when the surface roughness of the holding member 2 other than the guide groove 4 is increased, the target 1 sputtered on the holding member 2 is increased.
By increasing the adhesion area where the materials a and 1b adhere as a deposited film, it is possible to make it difficult to peel off the deposited film, and the deposited film that has adhered to portions other than the guide grooves 4 of the holding member 2 peels off and reattaches to the surface of the substrate 3. It is possible to prevent foreign matter from being generated in the thin film of the substrate 3,
A thin film having good film quality can be obtained, and at the same time, the number of periodical removals of a deposited film by sandblasting, which will be described later, can be reduced, which improves manufacturing efficiency, which is preferable. The effect was remarkable when the surface roughness of the holding member 2 was Rmax of 4 μm or more.
また、保持部材２の案内溝４以外の表面の堆積膜を定
期的に除去すればよい。定期的に除去する具体的手法と
しては、サンドブラスト加工が効率的で製造上で好まし
い。サンドブラスト加工は、堆積膜の定期的除去ととも
に、保持部材２の表面粗度を大きくする手法としても有
効である。Further, the deposited film on the surface of the holding member 2 other than the guide groove 4 may be regularly removed. As a specific method of removing periodically, sandblasting is efficient and preferable in manufacturing. Sandblasting is effective as a method of increasing the surface roughness of the holding member 2 as well as periodically removing the deposited film.
上述した実施例では、保持部材２に直接案内溝４を形
成した大型の保持部材を用いる例を示したが、本発明の
薄膜形成装置は、これに限定されるものではなく、例え
ば第２図に示したように、小型の保持部材12を用いても
同様である。In the embodiment described above, an example of using a large-sized holding member in which the guide groove 4 is directly formed in the holding member 2 has been shown, but the thin film forming apparatus of the present invention is not limited to this, and for example, FIG. As shown in, even if a small holding member 12 is used, it is the same.
すなわち、第２図に示すように、案内溝11を有する小
型の保持部材12を、回転軸（図では省略）を有するパレ
ット10に着脱可能に取り付け、当該案内溝11に基板を装
着する。保持部材12とパレット10とを着脱可能に取り付
ける手段としては、例えばボルト13を利用する方法等が
ある。That is, as shown in FIG. 2, a small holding member 12 having a guide groove 11 is detachably attached to a pallet 10 having a rotating shaft (not shown), and a substrate is attached to the guide groove 11. As a means for removably attaching the holding member 12 and the pallet 10, there is, for example, a method using a bolt 13.
なお、第２図のように保持部材12とパレット10とを別
にした構成を採用すると、例えば径もしくは厚みが異な
る基板を、同一ロットでスパッタする、またはロットを
変えてスパッタする場合でも、大型の保持部材を交換す
ることなく、同一パレットで小型の保持部材のみを基板
に適合させてスパッタできるため、製造効率上で好まし
い。By adopting a configuration in which the holding member 12 and the pallet 10 are separated as shown in FIG. 2, even if substrates having different diameters or thicknesses are sputtered in the same lot or different lots are sputtered, a large size This is preferable from the standpoint of manufacturing efficiency, because only a small holding member can be adapted to the substrate on the same pallet without replacing the holding member, and sputtering can be performed.
発明の効果 以上のように本発明は、薄膜化しようとする材料を蒸
発させる蒸発手段と、蒸発手段から蒸発する材料が付着
する基板を保持しながら回転する保持部材とを備え、保
持部材には基板を遊挿、かつ転動可能に保持し前記保持
部材の材料のみで構成した案内溝を具備し、案内溝の保
持部材の表面粗さをRmax1μｍ以下にした薄膜形成装置
であるため、基板にキズやダスト、及び基板の外周部の
薄膜が案内溝に当接することに起因した当該薄膜のキズ
の発生を抑制できるため、異物の混入やキズが無く、か
つ、均一な膜厚の薄膜を形成することができ、その工業
的価値は高い。EFFECTS OF THE INVENTION As described above, the present invention includes the evaporation means for evaporating the material to be thinned, and the holding member that rotates while holding the substrate to which the material evaporated from the evaporation means adheres. Since the thin film forming apparatus has a guide groove that holds the substrate loosely and rollably, and is configured only by the material of the holding member, and the surface roughness of the holding member of the guide groove is Rmax 1 μm or less, Since it is possible to suppress scratches, dust, and scratches in the thin film due to the thin film on the outer periphery of the substrate coming into contact with the guide groove, it is possible to form a thin film with no foreign matter or scratches and a uniform film thickness. Can, and its industrial value is high.
第１図及び第２図は本発明の一実施例における薄膜形成
装置の透視図及び部分拡大図、第３図及び第４図は従来
の薄膜形成装置の斜視図及び部分拡大図である。 １……スパッタターゲット、２、12……保持部材、３
（3a,3b,3c）……基板、４、11……案内溝、５……内
面。1 and 2 are a perspective view and a partially enlarged view of a thin film forming apparatus according to an embodiment of the present invention, and FIGS. 3 and 4 are a perspective view and a partially enlarged view of a conventional thin film forming apparatus. 1 ... Sputter target, 2, 12 ... Holding member, 3
(3a, 3b, 3c) ... Substrate, 4,11 ... Guide groove, 5 ... Inner surface.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 太田 威夫 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭64−17865（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takeo Ota 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A 64-17865 (JP, A)
Claims (3)
手段と、前記蒸発手段から蒸発する材料が付着する基板
を保持しながら回転する保持部材とを備え、前記保持部
材には前記基板を遊挿、かつ転動可能に保持し前記保持
部材の材料のみで構成した案内溝を具備し、前記案内溝
の前記保持部材の表面粗さをRmax1μｍ以下にした薄膜
形成装置。1. An evaporation means for evaporating a material to be thinned, and a holding member which rotates while holding a substrate to which the material evaporated from the evaporation means adheres, wherein the holding member floats the substrate. A thin film forming apparatus comprising a guide groove which is inserted and held so as to be rollable, and which is composed only of the material of the holding member, and the surface roughness of the holding member of the guide groove is Rmax 1 μm or less.
る案内溝部以外の表面粗さをRmax4μｍ以上にした、請
求項（１）記載の薄膜形成装置。2. The thin film forming apparatus according to claim 1, wherein the holding member has a surface roughness other than the guide groove portion where the substrate and the guide groove are in contact with each other at Rmax of 4 μm or more.
る案内溝部以外の表面をサンドブラストで加工した、請
求項（２）記載の薄膜形成装置。3. The thin film forming apparatus according to claim 2, wherein the surface of the holding member other than the guide groove portion where the substrate and the guide groove contact each other is processed by sandblasting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63207032A JPH0823068B2 (en) | 1988-08-19 | 1988-08-19 | Thin film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63207032A JPH0823068B2 (en) | 1988-08-19 | 1988-08-19 | Thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0254765A JPH0254765A (en) | 1990-02-23 |
| JPH0823068B2 true JPH0823068B2 (en) | 1996-03-06 |
Family
ID=16533074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63207032A Expired - Lifetime JPH0823068B2 (en) | 1988-08-19 | 1988-08-19 | Thin film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0823068B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443416A (en) * | 1993-09-09 | 1995-08-22 | Cybeq Systems Incorporated | Rotary union for coupling fluids in a wafer polishing apparatus |
| WO2008134516A2 (en) | 2007-04-27 | 2008-11-06 | Honeywell International Inc. | Novel manufacturing design and processing methods and apparatus for sputtering targets |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0733574B2 (en) * | 1987-07-10 | 1995-04-12 | セイコーエプソン株式会社 | Substrate holding mechanism in thin film manufacturing equipment |
-
1988
- 1988-08-19 JP JP63207032A patent/JPH0823068B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0254765A (en) | 1990-02-23 |
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