JPH08264381A - Laminated capacitor and its manufacture - Google Patents
Laminated capacitor and its manufactureInfo
- Publication number
- JPH08264381A JPH08264381A JP7068289A JP6828995A JPH08264381A JP H08264381 A JPH08264381 A JP H08264381A JP 7068289 A JP7068289 A JP 7068289A JP 6828995 A JP6828995 A JP 6828995A JP H08264381 A JPH08264381 A JP H08264381A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- metal
- metal thin
- forming
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010409 thin film Substances 0.000 claims abstract description 153
- 229910052751 metal Inorganic materials 0.000 claims abstract description 126
- 239000002184 metal Substances 0.000 claims abstract description 126
- 238000010335 hydrothermal treatment Methods 0.000 claims abstract description 16
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 16
- 229910052788 barium Inorganic materials 0.000 claims abstract description 9
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 8
- 229910052745 lead Inorganic materials 0.000 claims abstract description 8
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 44
- 239000007864 aqueous solution Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 25
- 239000003989 dielectric material Substances 0.000 abstract description 7
- 239000002131 composite material Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 229910002367 SrTiO Inorganic materials 0.000 description 7
- 239000003985 ceramic capacitor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001427 strontium ion Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，小型かつ軽量にして大
きな静電容量を有する積層コンデンサ及びその製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer capacitor which is small and lightweight and has a large capacitance, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】電子機器の小型化にともない、単位容積
あたりに収納される電子部品数が増大してきている。そ
して、トランジスタやダイオードのような界面の物理現
象に係わる素子は、集積回路技術の進歩により極めて小
型化されている。ところが、コンデンサはその静電容量
が電極面積に比例するため、大きな静電容量と小型化を
同時に実現することは容易ではない。しかしながら、大
きな静電容量と小型化を図ったコンデンサとして、積層
セラミックコンデンサ、電解コンデンサ、電気二重層コ
ンデンサ、薄膜コンデンサなどが実用化されている。2. Description of the Related Art With the miniaturization of electronic equipment, the number of electronic components housed in a unit volume is increasing. Elements such as transistors and diodes that are related to physical phenomena at the interface have been extremely miniaturized due to the progress of integrated circuit technology. However, since the capacitance of the capacitor is proportional to the electrode area, it is not easy to realize a large capacitance and downsizing at the same time. However, multilayer capacitors, electrolytic capacitors, electric double layer capacitors, thin film capacitors and the like have been put into practical use as capacitors having large capacitance and downsizing.
【０００３】[0003]
【発明が解決しようとする課題】積層セラミックコンデ
ンサは、ＢａＴｉＯ3 で代表されるペロブスカイト型複
合酸化物などの高誘電率材料の粉末原料を、有機バイン
ダーなどでスラリー化してシート状に成形した後、内部
電極を形成して積層し、その後焼結させたものである。
即ち、高誘電率材料の使用と積層化による電極面積の増
大により、高静電容量化を図ったものである。しかしな
がら、高誘電率の粉末原料は一般に千数百℃以上の高温
で焼結させる必要があるため、内部電極にパラジウムな
どの高価な貴金属を使用する必要があることや多大のエ
ネルギーを必要とすることからコスト高となり、その製
造工程も複雑である。又、その誘電体の厚さは約１０μ
ｍ程度あり、更なる薄膜化には限界がある。A multilayer ceramic capacitor is manufactured by forming a powder raw material of a high dielectric constant material such as a perovskite complex oxide typified by BaTiO 3 into a sheet form by slurrying it with an organic binder or the like. The internal electrodes are formed, laminated, and then sintered.
That is, by using a high dielectric constant material and increasing the electrode area by stacking, a high capacitance is achieved. However, since a powder material having a high dielectric constant generally needs to be sintered at a high temperature of several thousand hundreds of degrees Celsius or more, it is necessary to use an expensive precious metal such as palladium for the internal electrode and a large amount of energy is required. Therefore, the cost is high and the manufacturing process is complicated. The thickness of the dielectric is about 10μ.
There is a limit to further thinning.
【０００４】電解コンデンサと電気二重層コンデンサ
は、共に凹凸により電極の表面積を極力大きくすること
を図ったものであるが、それぞれ次のような欠点があ
る。Both the electrolytic capacitor and the electric double layer capacitor are intended to maximize the surface area of the electrode by the unevenness, but each has the following drawbacks.
【０００５】即ち、アルミ電解コンデンサやタンタル電
解コンデンサなどの電解コンデンサは、電極金属である
アルミニウムやタンタルの陽極酸化膜を誘電体として使
用しているという構造上、誘電体材料の選択の余地がな
いため、多様なコンデンサ特性の要求に対応できない。
又、それらの酸化物の比誘電率は高々数十程度であり、
セラミックコンデンサに使用されているＢａＴｉＯ3 な
どの高誘電率材料の数千という値と比べると著しく低い
ため、電極面積が大きい割に容量は大きくならない。
又、得られるコンデンサは有極性となる。That is, since electrolytic capacitors such as aluminum electrolytic capacitors and tantalum electrolytic capacitors use an anodic oxide film of aluminum or tantalum, which is an electrode metal, as a dielectric, there is no room for selecting a dielectric material. Therefore, it is not possible to meet various requirements for capacitor characteristics.
Moreover, the relative permittivity of these oxides is about several tens at most,
Compared with the value of thousands of high dielectric constant materials such as BaTiO 3 used for ceramic capacitors, it is extremely low, so that the capacitance does not increase despite the large electrode area.
Moreover, the obtained capacitor becomes polar.
【０００６】一方、電気二重層コンデンサは、静電容量
／体積比を大きくとれるものの、電解液を含むため衝撃
に弱く、しかも使用電圧が低い。On the other hand, the electric double layer capacitor can have a large capacitance / volume ratio, but since it contains an electrolytic solution, it is weak against impact and has a low operating voltage.
【０００７】薄膜コンデンサは、電極及び誘電体の厚さ
を極力薄くすることを図ったものであり、その膜厚は数
百ｎｍ以下にするのが一般的である。誘電体の薄膜化
は、単に誘電体の占める体積を低減するだけではなく、
同じ電極面積であれば静電容量を大きくする効果があ
る。薄膜コンデンサにはＴａ2 Ｏ5 などの酸化物薄膜を
蒸着やスパッタリングなどの気相法により薄膜化したも
のがあるが、これらの誘電率は高々数十であり、大容量
の実現には不十分である。The thin film capacitor is intended to make the thickness of the electrode and the dielectric as thin as possible, and the film thickness is generally set to several hundreds nm or less. Thinning the dielectric not only reduces the volume occupied by the dielectric,
The same electrode area has the effect of increasing the capacitance. Some thin film capacitors are thin films of oxide thin films such as Ta 2 O 5 formed by vapor phase methods such as vapor deposition and sputtering, but their dielectric constants are at most several tens, which is not sufficient to realize large capacity. Is.
【０００８】一方、ＢａＴｉＯ3 などの高誘電率材料を
同様の気相法で薄膜化しようとする試みもある。薄膜化
した場合は強誘電性が十分にあらわれないため、その比
誘電率はセラミックコンデンサで使用している膜厚での
数千という値に比べると小さいが、Ｔａ2 Ｏ5 などの酸
化物薄膜よりは高い数百の比誘電率が達成されている。
しかし、セラミックコンデンサがその長所としている積
層化の技術や、電解コンデンサや電気二重層コンデンサ
がその長所としている大表面積の膜形成技術がないこと
から電極面積の増大は望めず、薄膜化だけでの大容量コ
ンデンサの実現には至っていない。On the other hand, there is also an attempt to thin a high dielectric constant material such as BaTiO 3 by a similar vapor phase method. Since the ferroelectricity does not appear sufficiently when the film is made thin, its relative dielectric constant is small compared to the value of several thousand in the film thickness used in ceramic capacitors, but it is an oxide thin film such as Ta 2 O 5. Higher relative dielectric constants of several hundred have been achieved.
However, since there is no layering technology that ceramic capacitors have the advantage of, and large surface area film formation technology that electrolytic capacitors and electric double layer capacitors have the advantage of, it is not possible to expect an increase in the electrode area, and it is only possible to reduce the film thickness. Large-capacity capacitors have not been realized yet.
【０００９】以上より明らかなように、小型にして大き
な静電容量を有するコンデンサを低コストで実現するに
は、電解コンデンサには望めないような高誘電率材料の
使用が可能であること、その誘電体材料を薄膜コンデン
サなみに薄膜化することが可能であること、かつ、その
薄膜化した誘電体材料を使用して積層セラミックコンデ
ンサのような積層化による電極面積の増大が可能である
こと、という３つの課題を解決する必要がある。As is clear from the above, in order to realize a capacitor having a large electrostatic capacity in a small size at a low cost, it is possible to use a material having a high dielectric constant, which cannot be expected for an electrolytic capacitor. It is possible to make the dielectric material as thin as a thin film capacitor, and it is possible to increase the electrode area by laminating such a thin ceramic material as a laminated ceramic capacitor, It is necessary to solve these three issues.
【００１０】そこで、本発明の目的は、上記課題を解決
した安価な、小型・大容量の積層コンデンサとその製造
方法を提供することにある。Therefore, an object of the present invention is to provide an inexpensive, small-sized, large-capacity multilayer capacitor that solves the above problems and a method for manufacturing the same.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成するた
め、本発明の積層コンデンサは、金属基体又は絶縁基体
上に形成された、Ｔｉ及びＺｒのうち少なくとも１種類
からなる複数の金属薄膜の層と、該金属薄膜の縁端を交
互に露出させて残りを覆うように該金属薄膜の層間に形
成された一般式ＡＢＯ3 （但し、ＡはＣａ，Ｓｒ，Ｂａ
及びＰｂのうち少なくとも１種類、ＢはＴｉ及びＺｒの
うち少なくとも１種類）で表されるペロブスカイト型複
合酸化物からなる複数の誘電体薄膜と、前記金属薄膜の
露出した部分に電気的に接続された外部電極とからな
る。In order to achieve the above object, the multilayer capacitor of the present invention comprises a plurality of metal thin film layers made of at least one of Ti and Zr formed on a metal substrate or an insulating substrate. And a general formula ABO 3 (where A is Ca, Sr, Ba) formed between the layers of the metal thin film so as to alternately expose the edges of the metal thin film and cover the rest.
And Pb, B is at least one of Ti and Zr), and a plurality of dielectric thin films composed of a perovskite-type complex oxide represented by the following formula, and electrically connected to exposed portions of the metal thin film. And external electrodes.
【００１２】又、本発明の積層コンデンサの製造方法
は、Ｔｉ及びＺｒのうち少なくとも１種類からなる金属
基体を、Ｃａ、Ｓｒ、Ｂａ及びＰｂのうち少なくとも１
種類の金属イオンを含むアルカリ性の水溶液中に浸漬し
加熱して水熱処理するとともに、配設した電極と前記金
属基体との間に通電して電解処理を行なうことにより、
前記金属基体の一方の縁端を露出させて残りを覆うよう
に誘電体薄膜を形成する第１の工程と、該誘電体薄膜の
上にＴｉ及びＺｒのうち少なくとも１種類からなる金属
薄膜を形成する第２の工程と、該金属薄膜をＣａ、Ｓ
ｒ、Ｂａ及びＰｂのうち少なくとも１種類の金属イオン
を含むアルカリ性の水溶液中に浸漬し加熱して水熱処理
するとともに、配設した電極と該金属薄膜との間に通電
して電解処理を行なうことにより、該金属薄膜の前記金
属基体の露出縁端と向かい合う位置の縁端を露出させて
残りを覆うように誘電体薄膜を形成する第３の工程と、
前記第２の工程と第３の工程とを繰りかえして、複数の
金属薄膜と金属基体が対向する内部電極を形成するよう
に交互に露出した積層体を形成する第４の工程と、該積
層体の金属薄膜及び金属基体に電気的に接続された外部
電極を形成する第５の工程と、からなる。Further, in the method for manufacturing a multilayer capacitor of the present invention, a metal substrate made of at least one of Ti and Zr is added to at least one of Ca, Sr, Ba and Pb.
By immersing in an alkaline aqueous solution containing metal ions of a type and heating it for hydrothermal treatment, and conducting electrolysis by energizing between the disposed electrode and the metal substrate,
A first step of forming a dielectric thin film so as to expose one edge of the metal substrate and cover the other edge; and forming a metal thin film of at least one of Ti and Zr on the dielectric thin film The second step of
Immersing in an alkaline aqueous solution containing at least one metal ion of r, Ba and Pb, heating and hydrothermal treatment, and conducting electrolysis by energizing between the disposed electrode and the metal thin film. A third step of forming a dielectric thin film so as to expose the edge of the metal thin film at a position facing the exposed edge of the metal base and cover the rest.
A fourth step of repeating the second step and the third step to form a laminate in which a plurality of metal thin films and a metal substrate are alternately exposed so as to form internal electrodes facing each other, and the laminate. And a fifth step of forming an external electrode electrically connected to the metal thin film and the metal substrate.
【００１３】又、本発明の積層コンデンサの製造方法
は、絶縁基体の上にＴｉ及びＺｒのうち少なくとも１種
類からなる金属薄膜を形成する第１の工程と、該金属薄
膜をＣａ、Ｓｒ、Ｂａ及びＰｂのうち少なくとも１種類
の金属イオンを含むアルカリ性の水溶液中に浸漬し加熱
して水熱処理するとともに、配設した電極と該金属薄膜
との間に通電して電解処理を行なうことにより、該金属
薄膜の一方の縁端を露出させて残りを覆うように誘電体
薄膜を形成する第２の工程と、該誘電体薄膜の上にＴｉ
及びＺｒのうち少なくとも１種類からなる金属薄膜を形
成する工程と前記第２の工程とを繰り返して、複数の金
属薄膜が対向する内部電極を形成するように交互に露出
した積層体を形成する第３の工程と、該積層体の金属薄
膜に電気的に接続された外部電極を形成する第４の工程
と、からなる。In the method for manufacturing a multilayer capacitor of the present invention, a first step of forming a metal thin film made of at least one of Ti and Zr on an insulating substrate and the metal thin film is made of Ca, Sr, Ba. And Pb are immersed in an alkaline aqueous solution containing at least one kind of metal ion to be heated for hydrothermal treatment, and at the same time, an electric current is applied between the disposed electrode and the metal thin film to perform electrolytic treatment. A second step of forming a dielectric thin film so as to expose one edge of the metal thin film and cover the other edge, and Ti on the dielectric thin film.
A step of forming a metal thin film made of at least one of Zr and Zr and the second step to form a laminate in which a plurality of metal thin films are alternately exposed so as to form internal electrodes facing each other. 3 and a fourth step of forming an external electrode electrically connected to the metal thin film of the laminate.
【００１４】[0014]
【作用】本発明の積層コンデンサは、金属基体又は絶縁
基体上に、金属薄膜からなる複数の内部電極と、ペロブ
スカイト型複合酸化物からなる複数の薄膜誘電体と、外
部電極とからなる。そして、誘電体薄膜は水熱処理及び
電解処理によって金属薄膜の表面に形成されたものであ
る。The multilayer capacitor of the present invention comprises a plurality of internal electrodes made of a metal thin film, a plurality of thin film dielectrics made of a perovskite complex oxide, and an external electrode on a metal substrate or an insulating substrate. The dielectric thin film is formed on the surface of the metal thin film by hydrothermal treatment and electrolytic treatment.
【００１５】即ち、薄膜の高誘電率材料を誘電体とし
て、薄膜の金属を電極として使用したものであり、積み
重ねて電極面積を増大させたものの小型化が図れる。
又、従来の積層セラミックコンデンサのように高温で焼
成する必要もない。That is, the thin-film high-permittivity material is used as a dielectric and the thin-film metal is used as an electrode.
Further, it is not necessary to fire at high temperature as in the conventional monolithic ceramic capacitor.
【００１６】[0016]
【実施例】最初に、本発明で反復して実施した金属薄膜
形成工程と誘電体薄膜形成工程について説明する。EXAMPLES First, the metal thin film forming step and the dielectric thin film forming step which were repeatedly performed in the present invention will be described.
【００１７】（金属薄膜形成工程）Ｔｉ、Ｚｒ又はこれ
らの合金の薄膜を形成する工程は，すでに公知の高周波
スパッタ法によった。即ち、金属又は合金組成の金属板
をターゲットとして、５×１０-3Ｔｏｒｒの真空中で１
３．５６ＭＨｚ、１５０Ｗの条件で、絶縁基体又は誘電
体薄膜上に金属薄膜を形成した。このスパッタ条件下に
おける金属薄膜の形成速度は，約０．５μｍ／時間であ
った。なお，この値はターゲット合金の組成にはほとん
ど依存しなかった。(Metal thin film forming step) The step of forming a thin film of Ti, Zr or an alloy thereof was carried out by the already known high frequency sputtering method. That is, using a metal plate having a metal or alloy composition as a target, the target is 1 in a vacuum of 5 × 10 −3 Torr.
A metal thin film was formed on the insulating substrate or the dielectric thin film under the conditions of 3.56 MHz and 150 W. The metal thin film formation rate under these sputtering conditions was about 0.5 μm / hour. This value did not depend on the composition of the target alloy.
【００１８】なお、金属薄膜の形成は、スパッタ法以外
に蒸着法などを用いることができる。The metal thin film can be formed by a vapor deposition method or the like other than the sputtering method.
【００１９】（誘電体薄膜形成工程）Ｔｉ金属基体上に
誘電体薄膜としてＳｒＴｉＯ3 薄膜を形成する場合を例
として、図３及び図４に基づき誘電体薄膜形成工程を説
明する。なお、図３は誘電体薄膜形成工程で用いる装置
の断面図であり、図４は水熱処理温度が１５０℃の場合
の誘電体薄膜の形成条件を示す図である。(Dielectric Thin Film Forming Step) The dielectric thin film forming step will be described with reference to FIGS. 3 and 4, taking as an example the case of forming a SrTiO 3 thin film as a dielectric thin film on a Ti metal substrate. 3 is a cross-sectional view of an apparatus used in the dielectric thin film forming step, and FIG. 4 is a view showing conditions for forming the dielectric thin film when the hydrothermal treatment temperature is 150 ° C.
【００２０】まず、テトラフルオロエチレン製のビーカ
ー１内に、ＮａＯＨ水溶液を添加してｐＨ１４．５に調
整した０．５ｍｏｌ／Ｌ濃度のＳｒ（ＯＨ）2 の水溶液
２を入れた。その後、この水溶液２が入ったビーカー１
全体をオートクレーブ３内に設置した。一方、オートク
レーブ３の外部の電源４から内部のビーカー１内へ、オ
ートクレーブ３を密閉状態にしたときでも電力を供給で
きるようにあらかじめ配線しておいた一対のテトラフル
オロエチレンで被覆した白金線５に、Ｔｉからなる金属
基体６と白金板７を電極として接続し、水溶液２内にこ
れらの電極が浸漬するように調節してオートクレーブ３
を密閉した。First, a beaker 1 made of tetrafluoroethylene was charged with an aqueous solution 2 of Sr (OH) 2 having a concentration of 0.5 mol / L adjusted to pH 14.5 by adding an aqueous NaOH solution. After that, beaker 1 containing this aqueous solution 2
The whole was installed in the autoclave 3. On the other hand, a pair of tetrafluoroethylene-coated platinum wires 5 are pre-wired so that power can be supplied from the power source 4 outside the autoclave 3 to the inside beaker 1 even when the autoclave 3 is sealed. , The metal substrate 6 made of Ti and the platinum plate 7 are connected as electrodes, and the electrodes are adjusted so as to be immersed in the aqueous solution 2 and the autoclave 3 is adjusted.
Was sealed.
【００２１】次に、この状態でオートクレーブ３内の水
溶液を１５０℃まで昇温し、その後所定の時間この温度
に保持してＴｉ金属基体の水熱処理を行った。これと同
時に、昇温過程の５０℃を超えた時点から１５０℃での
水熱処理が終了する時点までの間、Ｔｉ金属基体６を陽
極、白金板７を陰極として両電極間に直流８Ｖを印加し
て、１０Ｃ／ｃｍ2 の電気量に相当する電解処理を施し
た。これらの処理の関係を図４に示す。なお、この定電
圧電解処理方法で形成される薄膜の膜厚は電解処理にお
いて供給する電気量で容易に制御できる。その後、処理
後のＴｉ金属基体６を蒸留水中で十分に超音波洗浄した
後、１２０℃で６０分間乾燥した。Next, in this state, the aqueous solution in the autoclave 3 was heated to 150 ° C., and then kept at this temperature for a predetermined time to perform hydrothermal treatment of the Ti metal substrate. At the same time, from the time when the temperature rises above 50 ° C. to the time when the hydrothermal treatment at 150 ° C. ends, a direct current of 8 V is applied between the two electrodes with the Ti metal substrate 6 as the anode and the platinum plate 7 as the cathode. Then, an electrolytic treatment corresponding to an electric quantity of 10 C / cm 2 was performed. The relationship between these processes is shown in FIG. The thickness of the thin film formed by this constant voltage electrolytic treatment method can be easily controlled by the amount of electricity supplied in the electrolytic treatment. Then, the treated Ti metal substrate 6 was sufficiently ultrasonically washed in distilled water and then dried at 120 ° C. for 60 minutes.
【００２２】以上の方法によって、Ｔｉ金属基体６のう
ち、Ｓｒ（ＯＨ）2 の水溶液２に浸漬されていた部分の
表面に厚さ０．２μｍのＳｒＴｉＯ3 多結晶膜を形成す
ることができた。その膜厚は走査電子顕微鏡で直接測定
した。又、結晶性は薄膜Ｘ線回折で確認した。By the above method, a 0.2 μm thick SrTiO 3 polycrystal film could be formed on the surface of the portion of the Ti metal substrate 6 that had been immersed in the aqueous solution 2 of Sr (OH) 2 . . The film thickness was directly measured by a scanning electron microscope. The crystallinity was confirmed by thin film X-ray diffraction.
【００２３】なお、上記例においては、Ｓｒイオン源と
してはＳｒ（ＯＨ）2 を、ｐＨ調製にはＮａＯＨを用い
たが、その目的を達することのできる他の物質、例え
ば、Ｓｒ（ＯＨ）2 ・８Ｈ2 ＯとＫＯＨなどを用いるこ
とができる。そして、ｐＨは１３以上に調節するのが好
ましい。In the above example, Sr (OH) 2 was used as the Sr ion source and NaOH was used to adjust the pH, but other substances that can achieve the purpose, for example, Sr (OH) 2 are used. 8H 2 O and KOH can be used. The pH is preferably adjusted to 13 or higher.
【００２４】又、電解処理をともなわない水熱処理のみ
でもＳｒＴｉＯ3 膜を形成できるが、この場合の膜厚は
およそ０．１μｍ以下に留まるため、電解処理を併用す
るのが好ましい。Further, the SrTiO 3 film can be formed only by the hydrothermal treatment without the electrolytic treatment, but in this case, the film thickness remains approximately 0.1 μm or less, and therefore it is preferable to use the electrolytic treatment together.
【００２５】（実施例１）Ｔｉ金属基体上に、ＳｒＴｉ
Ｏ3 誘電体薄膜とＴｉ金属薄膜とを積層化した場合の実
施例を、製造工程を示す断面図である図１に基づき説明
する。なお、図１において、１０はＴｉからなる金属基
体であり、１３、１７、２１及び２３はＴｉからなる金
属薄膜である。又、１０ａは金属基体１０の一端、１３
ａ及び１７ａはそれぞれ金属薄膜１３及び１７の一端で
ある。又、１２、１５、１９、２２及び２４は金属基体
あるいは金属薄膜上に形成されたＳｒＴｉＯ3 からなる
誘電体薄膜である。又、１６及び２０はシリコン樹脂か
らなる絶縁皮膜であり、２５及び２６は露出した金属基
体及び金属薄膜と電気的に接続された１対の外部電極で
ある。Example 1 SrTi was deposited on a Ti metal substrate.
An example of stacking an O 3 dielectric thin film and a Ti metal thin film will be described based on FIG. 1 which is a cross-sectional view showing the manufacturing process. In FIG. 1, 10 is a metal base made of Ti, and 13, 17, 21, and 23 are metal thin films made of Ti. Further, 10a is one end of the metal base 10, and 13
Reference characters a and 17a are ends of the metal thin films 13 and 17, respectively. Reference numerals 12, 15, 19, 22 and 24 are dielectric thin films made of SrTiO 3 formed on a metal substrate or a metal thin film. Further, 16 and 20 are insulating films made of silicon resin, and 25 and 26 are a pair of external electrodes electrically connected to the exposed metal substrate and metal thin film.
【００２６】まず、Ｔｉからなる長さ３ｍｍ、幅２ｍ
ｍ、厚さ５００μｍの金属基体１０を準備し、その一端
１０ａの部分で電気的接続をとり、矢印１１で示す部分
をＳｒ（ＯＨ）2 水溶液中に浸漬し、前記の誘電体薄膜
形成工程によって、膜厚０．２μｍのＳｒＴｉＯ3 から
なる誘電体薄膜１２を形成した｛図１（ａ）｝。First, the length of Ti is 3 mm and the width is 2 m.
A metal substrate 10 having a thickness of 500 m and a thickness of 500 μm is prepared, an electrical connection is made at one end 10a thereof, the portion indicated by an arrow 11 is immersed in an Sr (OH) 2 aqueous solution, and the dielectric thin film forming step is performed. A dielectric thin film 12 made of SrTiO 3 having a thickness of 0.2 μm was formed {FIG. 1 (a)}.
【００２７】次に、この誘電体薄膜１２の上に、前記の
金属薄膜形成工程によって、膜厚１μｍのＴｉからなる
金属薄膜１３を形成した。その後、この金属薄膜１３の
一端１３ａの部分で電気的接続をとり、矢印１４で示す
部分をＳｒ（ＯＨ）2 水溶液中に浸漬し、前記の誘電体
薄膜形成工程によって、ＳｒＴｉＯ3 からなる誘電体薄
膜１５を形成した｛図１（ｂ）｝。なおこのとき、金属
基体１０の端部１０ａの表面に水熱処理による変質を防
ぐために、誘電体薄膜形成工程前にシリコン樹脂からな
る絶縁皮膜１６を形成し、誘電体薄膜形成後にこれを除
去した。Next, a metal thin film 13 made of Ti and having a film thickness of 1 μm was formed on the dielectric thin film 12 by the metal thin film forming step described above. After that, electrical connection is made at a portion of one end 13a of the metal thin film 13, the portion shown by an arrow 14 is dipped in an Sr (OH) 2 aqueous solution, and a dielectric material made of SrTiO 3 is formed by the dielectric thin film forming step. A thin film 15 was formed {FIG. 1 (b)}. At this time, in order to prevent alteration due to hydrothermal treatment on the surface of the end portion 10a of the metal substrate 10, an insulating film 16 made of silicon resin was formed before the dielectric thin film forming step and removed after the dielectric thin film was formed.
【００２８】その後、Ｔｉからなる金属薄膜１７を前記
の金属薄膜形成工程によって形成した後、前記金属薄膜
端１３ａの反対側に位置する金属薄膜の一端１７ａの部
分で電気的接続をとり、矢印１８で示す部分をＳｒ（Ｏ
Ｈ）2 の水溶液中に浸漬し、前記の誘電体薄膜形成工程
によって、ＳｒＴｉＯ3 からなる誘電体薄膜１９を形成
した（表１（ｃ））。なお、このときも、誘電体薄膜形
成工程前に、金属薄膜１３の端部１３ａの表面にシリコ
ン樹脂からなる絶縁皮膜２０を形成し、誘電体薄膜形成
後にこれを除去した。Then, after the metal thin film 17 made of Ti is formed by the above-described metal thin film forming step, electrical connection is made at the end 17a of the metal thin film located on the opposite side of the metal thin film end 13a, and the arrow 18 is formed. Sr (O
It was immersed in an aqueous solution of H) 2 and the dielectric thin film 19 made of SrTiO 3 was formed by the above-described dielectric thin film forming step (Table 1 (c)). At this time as well, the insulating film 20 made of silicon resin was formed on the surface of the end portion 13a of the metal thin film 13 before the dielectric thin film forming step, and was removed after the dielectric thin film was formed.
【００２９】その後、金属薄膜１３の形成から誘電体薄
膜薄膜１９の形成までと同様にして、金属薄膜２１、誘
電体薄膜２２、金属薄膜２３及び誘電体薄膜２４を順次
形成して、金属薄膜及び金属基体が誘電体薄膜の間にあ
って対向する内部電極を形成するように交互に露出した
積層体を形成した。Thereafter, the metal thin film 21, the dielectric thin film 22, the metal thin film 23 and the dielectric thin film 24 are sequentially formed in the same manner as the formation of the metal thin film 13 to the formation of the dielectric thin film 19 and the metal thin film, Laminates were alternately exposed so that the metal substrate was between the dielectric thin films to form opposing internal electrodes.
【００３０】最後に、Ａｇペーストを塗布して、露出し
た金属基体および金属薄膜の部分と電気的に接続した外
部電極２５、２６を形成して、合計６層の誘電体薄膜を
積層したコンデンサを作製した｛図１（ｄ）｝。Finally, an Ag paste was applied to form external electrodes 25 and 26 electrically connected to the exposed metal substrate and metal thin film portions, and a capacitor having a total of six dielectric thin films laminated was prepared. It was produced {Fig. 1 (d)}.
【００３１】以上、得られた積層コンデンサの外部電極
間でその静電容量（周波数１ｋＨｚ、印加電圧１．０Ｖ
ｒｍｓ）を測定したところ、４１ｎＦであった。The capacitance (frequency: 1 kHz, applied voltage: 1.0 V) between the external electrodes of the obtained multilayer capacitor is as described above.
The rms) was measured and found to be 41 nF.
【００３２】（実施例２）金属基体としてＴｉ（９０ｗ
ｔ％）−Ｚｒ（１０ｗｔ％）からなる合金を用いて、こ
の基体上に、チタン酸ジルコン酸バリウム（ＢａＴｉ
0.9 Ｚｒ0.1 Ｏ3 ）誘電体薄膜と、金属基体と同じ組成
であって膜厚１μｍの合金薄膜とを、実施例１と同様に
して積層して、合計３０層の誘電体薄膜を積層したコン
デンサを作製した。得られた積層コンデンサの静電容量
（周波数１ｋＨｚ、印加電圧１．０Ｖｒｍｓ）は１．２
２μＦであった。(Example 2) Ti (90w) as a metal substrate
t%)-Zr (10 wt%) is used to form barium zirconate titanate (BaTi) on this substrate.
0.9 Zr 0.1 O 3 ) Dielectric thin film and an alloy thin film having the same composition as the metal substrate and a thickness of 1 μm are laminated in the same manner as in Example 1 to laminate a total of 30 dielectric thin films. Was produced. The capacitance (frequency 1 kHz, applied voltage 1.0 Vrms) of the obtained multilayer capacitor was 1.2.
It was 2 μF.
【００３３】（実施例３）ポリフェニレンサルファイド
（以下、ＰＰＳと称す）樹脂からなる絶縁基体上に、Ｂ
ａＴｉＯ3 誘電体薄膜とＴｉ金属薄膜を積層化した場合
の実施例を、製造工程を示す断面図である図２に基づき
説明する。なお、図２において、３０はＰＰＳ樹脂から
なる絶縁基体であり、３１、３４、３８及び４０はＴｉ
からなる金属薄膜である。又、３１ａ及び３４ａはそれ
ぞれ金属薄膜３１及び３４の一端である。又、３３、３
６、３９及び４１は金属薄膜上に形成されたＢａＴｉＯ
3 からなる誘電体薄膜である。又、３７はシリコン樹脂
からなる絶縁皮膜であり、４２及び４３は露出した金属
基板及び金属薄膜と電気的に接続された１対の外部電極
である。(Example 3) B was formed on an insulating substrate made of polyphenylene sulfide (hereinafter referred to as PPS) resin.
An example of stacking an aTiO 3 dielectric thin film and a Ti metal thin film will be described with reference to FIG. 2 which is a cross-sectional view showing a manufacturing process. In FIG. 2, 30 is an insulating substrate made of PPS resin, and 31, 34, 38 and 40 are Ti.
Is a thin metal film. Further, 31a and 34a are one ends of the metal thin films 31 and 34, respectively. Also, 33, 3
6, 39 and 41 are BaTiO formed on the metal thin film
It is a dielectric thin film consisting of 3 . Further, 37 is an insulating film made of silicon resin, and 42 and 43 are a pair of external electrodes electrically connected to the exposed metal substrate and metal thin film.
【００３４】まず、ＰＰＳ樹脂からなる長さ３ｍｍ、幅
２ｍｍ、厚さ５００μｍの絶縁基体３０を準備し、この
絶縁基体３０の上に、前記の金属薄膜形成工程によっ
て、膜厚１μｍのＴｉからなる金属薄膜３１を形成し
た。そして、この金属薄膜３１の一端３１ａの部分で電
気的接続をとり、矢印３２で示す部分をｐＨ１４．２の
０．５ｍｏｌ／Ｌ濃度のＢａ（ＯＨ）2 水溶液中に浸漬
し、前記の誘電体薄膜形成工程によって、膜厚０．１μ
ｍのＢａＴｉＯ3 薄膜３３を形成した｛図２（ａ）｝。First, an insulating substrate 30 made of PPS resin and having a length of 3 mm, a width of 2 mm and a thickness of 500 μm is prepared, and Ti having a film thickness of 1 μm is formed on the insulating substrate 30 by the metal thin film forming step. The metal thin film 31 was formed. Then, electrical connection is made at a portion of one end 31a of the metal thin film 31, and a portion indicated by an arrow 32 is immersed in a 0.5 mol / L concentration Ba (OH) 2 aqueous solution having a pH of 14.2 to obtain the above-mentioned dielectric material. The film thickness is 0.1μ
A BaTiO 3 thin film 33 of m was formed {FIG. 2 (a)}.
【００３５】次に、この誘電体薄膜３３の上に、前記の
金属薄膜形成工程によって、Ｔｉからなる金属薄膜３４
を形成した。その後、金属薄膜の一端３１ａの反対側に
位置する金属薄膜の一端３４ａの部分で電気的接続をと
り、矢印３５で示す部分をＢａ（ＯＨ）2 水溶液中に浸
漬し、前記の誘電体薄膜形成工程と同様の工程によっ
て、ＢａＴｉＯ3 からなる誘電体薄膜３６を形成した
｛図２（ｂ）｝。なお、このとき、金属薄膜３１の端部
３１ａの表面に水熱処理による変質を防ぐために、誘電
体薄膜形成工程前にシリコン樹脂からなる絶縁皮膜３７
を形成し、誘電体薄膜形成後にこれを除去した。Next, a metal thin film 34 made of Ti is formed on the dielectric thin film 33 by the metal thin film forming step described above.
Was formed. After that, electrical connection is made at a portion of one end 34a of the metal thin film located on the opposite side of the one end 31a of the metal thin film, and the portion shown by an arrow 35 is immersed in a Ba (OH) 2 aqueous solution to form the dielectric thin film. A dielectric thin film 36 made of BaTiO 3 was formed by the same process as the process {FIG. 2 (b)}. At this time, in order to prevent deterioration of the surface of the end portion 31a of the metal thin film 31 due to hydrothermal treatment, the insulating film 37 made of silicon resin is formed before the dielectric thin film forming step.
Was formed, and this was removed after the dielectric thin film was formed.
【００３６】その後、金属薄膜３１の形成から誘電体薄
膜３６の形成までと同様にして、金属薄膜３８、誘電体
薄膜３９、金属薄膜４０及び誘電体薄膜４１を順次形成
して、金属薄膜が誘電体薄膜の間にあって対向する内部
電極を形成するように交互に露出した積層体を形成し
た。Thereafter, the metal thin film 38, the dielectric thin film 39, the metal thin film 40, and the dielectric thin film 41 are sequentially formed in the same manner as the formation of the metal thin film 31 to the formation of the dielectric thin film 36, and the metal thin film becomes a dielectric film. Laminates were alternately exposed so as to form opposing internal electrodes between body thin films.
【００３７】最後に、Ａｇペーストを塗布して、露出し
た金属薄膜の部分と電気的に接続した外部電極４２、４
３を形成して、合計４層の誘電体薄膜を積層したコンデ
ンサを作製した｛図２（ｃ）｝。Finally, the Ag paste is applied to the external electrodes 42, 4 electrically connected to the exposed metal thin film portion.
3 was formed to produce a capacitor in which a total of four layers of dielectric thin films were laminated {FIG. 2 (c)}.
【００３８】以上、得られた積層コンデンサの外部電極
間でその静電容量（周波数１ｋＨｚ、印加電圧１．０Ｖ
ｒｍｓ）を測定したところ、８９ｎＦであった。The capacitance (frequency: 1 kHz, applied voltage: 1.0 V) between the external electrodes of the obtained multilayer capacitor is as described above.
The rms) was measured and found to be 89 nF.
【００３９】以上、実施例１〜３に示した通り、本発明
の方法によって、小型・大容量の積層コンデンサを容易
に得ることができた。As described above, as shown in Examples 1 to 3, a small-sized and large-capacity multilayer capacitor could be easily obtained by the method of the present invention.
【００４０】[0040]
【発明の効果】以上の説明で明らかなように、本発明の
積層コンデンサは、金属基体又は絶縁基体上の、金属薄
膜からなる複数の内部電極と、電解処理を併用した水熱
処理によってその内部電極の表面に形成させたペロブス
カイト型複合酸化物からなる複数の薄膜誘電体と、外部
電極とからなる。As is apparent from the above description, the multilayer capacitor of the present invention has a plurality of internal electrodes made of a metal thin film on a metal base or an insulating base, and the internal electrodes are formed by hydrothermal treatment combined with electrolytic treatment. And a plurality of thin film dielectrics made of perovskite type complex oxide formed on the surface of, and external electrodes.
【００４１】即ち、誘電体として薄膜の高誘電率材料
を、電極として薄膜の金属を使用したものであり、さら
に、従来の積層セラミックコンデンサのように高温で焼
成する必要もない。That is, a thin film having a high dielectric constant is used as a dielectric, and a thin film metal is used as an electrode. Further, it is not necessary to perform firing at a high temperature as in a conventional monolithic ceramic capacitor.
【００４２】したがって、本発明の方法によれば、安価
な、小型・大容量の積層コンデンサを得ることができ
る。Therefore, according to the method of the present invention, an inexpensive, small-sized, large-capacity multilayer capacitor can be obtained.
【図１】本発明の金属基体上に積層コンデンサを形成す
る場合の製造工程を示す断面図である。FIG. 1 is a cross-sectional view showing a manufacturing process for forming a multilayer capacitor on a metal substrate of the present invention.
【図２】本発明の絶縁基体上に積層コンデンサを形成す
る場合の製造工程を示す断面図である。FIG. 2 is a cross-sectional view showing a manufacturing process for forming a multilayer capacitor on an insulating substrate of the present invention.
【図３】誘電体薄膜形成工程で用いる装置の断面図であ
る。FIG. 3 is a cross-sectional view of an apparatus used in a dielectric thin film forming step.
【図４】水熱処理温度が１５０℃の場合の誘電体薄膜の
形成条件を示す図である。FIG. 4 is a diagram showing conditions for forming a dielectric thin film when the hydrothermal treatment temperature is 150 ° C.
２ 水溶液 ７ 電極 ６，１０ 金属基体 ３０ 絶縁基体 １３、１７、２１、２３、３１、３４、３８、４０
金属薄膜 １２、１５、１９、２２、２４、３３、３６、３９、４
１ 誘電体薄膜 ２５、２６、４２、４３ 外部電極2 Aqueous Solution 7 Electrode 6,10 Metal Substrate 30 Insulating Substrate 13, 17, 21, 23, 31, 34, 38, 40
Metal thin films 12, 15, 19, 22, 24, 33, 36, 39, 4
1 Dielectric thin film 25, 26, 42, 43 External electrode
Claims (3)
Ｔｉ及びＺｒのうち少なくとも１種類からなる複数の金
属薄膜の層と、該金属薄膜の縁端を交互に露出させて残
りを覆うように該金属薄膜の層間に形成された一般式Ａ
ＢＯ3 （但し、ＡはＣａ，Ｓｒ，Ｂａ及びＰｂのうち少
なくとも１種類、ＢはＴｉ及びＺｒのうち少なくとも１
種類）で表されるペロブスカイト型複合酸化物からなる
複数の誘電体薄膜と、前記金属薄膜の露出した部分に電
気的に接続された外部電極とからなる積層コンデンサ。1. A metal substrate or an insulating substrate,
A plurality of layers of a metal thin film made of at least one of Ti and Zr, and a general formula A formed between the layers of the metal thin film so as to alternately expose the edge of the metal thin film and cover the rest.
BO 3 (where A is at least one of Ca, Sr, Ba and Pb, B is at least one of Ti and Zr)
A multilayer capacitor composed of a plurality of dielectric thin films made of perovskite-type complex oxides represented by the type) and an external electrode electrically connected to the exposed portion of the metal thin film.
らなる金属基体を、Ｃａ、Ｓｒ、Ｂａ及びＰｂのうち少
なくとも１種類の金属イオンを含むアルカリ性の水溶液
中に浸漬し加熱して水熱処理するとともに、配設した電
極と前記金属基体との間に通電して電解処理を行なうこ
とにより、前記金属基体の一方の縁端を露出させて残り
を覆うように誘電体薄膜を形成する第１の工程と、該誘
電体薄膜の上にＴｉ及びＺｒのうち少なくとも１種類か
らなる金属薄膜を形成する第２の工程と、該金属薄膜を
Ｃａ、Ｓｒ、Ｂａ及びＰｂのうち少なくとも１種類の金
属イオンを含むアルカリ性の水溶液中に浸漬し加熱して
水熱処理するとともに、配設した電極と該金属薄膜との
間に通電して電解処理を行なうことにより、該金属薄膜
の前記金属基体の露出縁端と向かい合う位置の縁端を露
出させて残りを覆うように誘電体薄膜を形成する第３の
工程と、前記第２の工程と第３の工程とを繰りかえし
て、複数の金属薄膜と金属基体が対向する内部電極を形
成するように交互に露出した積層体を形成する第４の工
程と、該積層体の金属薄膜及び金属基体に電気的に接続
された外部電極を形成する第５の工程と、からなる積層
コンデンサの製造方法。2. A metal base made of at least one of Ti and Zr is immersed in an alkaline aqueous solution containing at least one metal ion of Ca, Sr, Ba and Pb and heated to undergo hydrothermal treatment. A first step of forming a dielectric thin film so that one edge of the metal substrate is exposed and the rest is covered by electrolyzing by energizing between the disposed electrode and the metal substrate And a second step of forming a metal thin film made of at least one of Ti and Zr on the dielectric thin film, and applying a metal ion of at least one of Ca, Sr, Ba and Pb to the metal thin film. The metal thin film is immersed in an alkaline aqueous solution containing it for hydrothermal treatment, and the electrolytic treatment is carried out by supplying electricity between the disposed electrode and the metal thin film to expose the metal substrate of the metal thin film. A plurality of metal thin films are formed by repeating the third step of forming a dielectric thin film so as to expose the edge at the position facing the projecting edge and cover the rest, and the second step and the third step. A fourth step of forming a laminate in which the metal substrates are alternately exposed so as to form opposing internal electrodes, and a fifth step of forming external electrodes electrically connected to the metal thin film and the metal substrate of the laminate. And a method of manufacturing a multilayer capacitor.
くとも１種類からなる金属薄膜を形成する第１の工程
と、該金属薄膜をＣａ、Ｓｒ、Ｂａ及びＰｂのうち少な
くとも１種類の金属イオンを含むアルカリ性の水溶液中
に浸漬し加熱して水熱処理するとともに、配設した電極
と該金属薄膜との間に通電して電解処理を行なうことに
より、該金属薄膜の一方の縁端を露出させて残りを覆う
ように誘電体薄膜を形成する第２の工程と、該誘電体薄
膜の上にＴｉ及びＺｒのうち少なくとも１種類からなる
金属薄膜を形成する工程と前記第２の工程とを繰り返し
て、複数の金属薄膜が対向する内部電極を形成するよう
に交互に露出した積層体を形成する第３の工程と、該積
層体の金属薄膜に電気的に接続された外部電極を形成す
る第４の工程と、からなる積層コンデンサの製造方法。3. A first step of forming a metal thin film made of at least one of Ti and Zr on an insulating substrate, and the metal thin film is made of at least one metal ion of Ca, Sr, Ba and Pb. By immersing it in an alkaline aqueous solution containing water for hydrothermal treatment, and conducting electrolysis by energizing between the disposed electrode and the metal thin film to expose one edge of the metal thin film. And a second step of forming a dielectric thin film so as to cover the rest, a step of forming a metal thin film made of at least one of Ti and Zr on the dielectric thin film, and the second step are repeated. And a third step of forming a laminated body in which a plurality of metal thin films are alternately exposed so as to form opposing internal electrodes, and a third step of forming an external electrode electrically connected to the metal thin film of the laminated body. From process 4 Method for manufacturing multilayer capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7068289A JPH08264381A (en) | 1995-03-27 | 1995-03-27 | Laminated capacitor and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7068289A JPH08264381A (en) | 1995-03-27 | 1995-03-27 | Laminated capacitor and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08264381A true JPH08264381A (en) | 1996-10-11 |
Family
ID=13369472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7068289A Pending JPH08264381A (en) | 1995-03-27 | 1995-03-27 | Laminated capacitor and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08264381A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6590866B2 (en) | 1997-08-13 | 2003-07-08 | Fujitsu Limited | Cell flowing ratio controlling method and cell switching system using the same |
| JP2011077151A (en) * | 2009-09-29 | 2011-04-14 | Tdk Corp | Thin-film capacitor, and method of manufacturing the same |
| KR101217820B1 (en) * | 2011-01-05 | 2013-01-21 | 삼화콘덴서공업주식회사 | Embedded printed circuit board using flexible multi layer type thin film capacitor |
-
1995
- 1995-03-27 JP JP7068289A patent/JPH08264381A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6590866B2 (en) | 1997-08-13 | 2003-07-08 | Fujitsu Limited | Cell flowing ratio controlling method and cell switching system using the same |
| JP2011077151A (en) * | 2009-09-29 | 2011-04-14 | Tdk Corp | Thin-film capacitor, and method of manufacturing the same |
| US8605410B2 (en) | 2009-09-29 | 2013-12-10 | Tdk Corporation | Thin-film capacitor and manufacturing method thereof |
| KR101217820B1 (en) * | 2011-01-05 | 2013-01-21 | 삼화콘덴서공업주식회사 | Embedded printed circuit board using flexible multi layer type thin film capacitor |
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