JPH0827565A - Film forming device and evaporating source device for film forming - Google Patents
Film forming device and evaporating source device for film formingInfo
- Publication number
- JPH0827565A JPH0827565A JP16123994A JP16123994A JPH0827565A JP H0827565 A JPH0827565 A JP H0827565A JP 16123994 A JP16123994 A JP 16123994A JP 16123994 A JP16123994 A JP 16123994A JP H0827565 A JPH0827565 A JP H0827565A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- film
- heating
- lump
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001704 evaporation Methods 0.000 title claims abstract description 58
- 239000002994 raw material Substances 0.000 claims abstract description 181
- 238000010438 heat treatment Methods 0.000 claims abstract description 58
- 230000008020 evaporation Effects 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 19
- 230000009257 reactivity Effects 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 238000005192 partition Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 239000000470 constituent Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 7
- 230000008016 vaporization Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract 3
- 239000010408 film Substances 0.000 description 84
- 230000008569 process Effects 0.000 description 8
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 7
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は成膜装置および成膜用蒸
発源装置に係り、特に詳細には、化学的に安定な原料と
不安定な原料とを用いて、基板上にこれら化合物結晶の
膜を成長させる装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus and an evaporation source apparatus for film formation, and more particularly, to a compound crystal formed on a substrate by using a chemically stable raw material and an unstable raw material. Apparatus for growing a film.
【０００２】[0002]
【従来の技術】真空下での物理的成膜法（ＰＶＤ法）と
して、真空蒸着法が知られている。真空中で材料物質を
加熱して蒸発或いは昇華させ、その蒸気を比較的低温の
他の基体の上に輸送して凝縮・析出させることにより、
薄膜を形成する手法が真空蒸着である。真空であること
は、原料物質の蒸発を促進する。また、蒸気の輸送過程
の効率を上げて膜の生成を促進すると共に、高温の蒸発
器中で原料物質が熱分解或いは空気（酸素）に触れて酸
化するなどの反応により、変質したり劣化するのを防ぐ
のに有効に機能している。2. Description of the Related Art A vacuum deposition method is known as a physical film forming method (PVD method) under vacuum. By heating a material in a vacuum to evaporate or sublimate it and transport the vapor onto another substrate at a relatively low temperature to cause condensation / precipitation,
The method of forming a thin film is vacuum vapor deposition. The vacuum promotes evaporation of the source material. In addition, the efficiency of the vapor transport process is increased to promote the formation of a film, and the raw material is deteriorated or deteriorated by a reaction such as thermal decomposition or contact with air (oxygen) and oxidation in a high temperature evaporator. It works effectively to prevent
【０００３】ＰＶＤプロセスにおける基本的ステップ
は、第１に、原料物質の気相空間への放出、第２に、空
間中での蒸気の輸送、第３に、基板表面への蒸気の入射
および析出、の３ステップからなる。ここで、気相空間
への放出プロセスでは、原料の塊、粉末あるいは粒子を
供給する手段として、いわゆる「るつぼ」が用いられ、
従来から蒸発用るつぼとして、クヌーセン型るつぼ、末
広ノズル型るつぼ等が知られている。The basic steps in the PVD process are: first, the release of the source material into the vapor phase space, second, the transport of vapors in the space, and third, the injection and deposition of vapors on the substrate surface. , 3 steps. Here, in the release process into the gas phase space, a so-called "crucible" is used as a means for supplying a mass, powder or particles of the raw material,
Conventionally, Knudsen type crucibles, Suehiro nozzle type crucibles, etc. are known as evaporation crucibles.
【０００４】成膜に際しては、大気中でるつぼに原料が
入れられ、真空中で底部が加熱させることで原料が蒸発
される。そして、蒸気は頂部の開口を通って気相空間
（真空空間）に放出され、基板の方向へ輸送される。成
膜が完了すると真空状態がリークされ、大気中で成膜済
みの基板が取り出される。このとき、るつぼ内の原料
は、大気にさらされる。When forming a film, the raw material is put in a crucible in the air and the bottom is heated in a vacuum to evaporate the raw material. Then, the vapor is discharged into the vapor phase space (vacuum space) through the opening at the top and is transported toward the substrate. When the film formation is completed, the vacuum state is leaked, and the film-formed substrate is taken out in the atmosphere. At this time, the raw material in the crucible is exposed to the atmosphere.
【０００５】[0005]
【発明が解決しようとする課題】成膜原料には化学的に
安定な物質も多いが、化学的に不安定な物質もある。こ
のような不安定な物質は、成膜プロセスの後に大気にさ
らされると、大気中の成分、例えば酸素や水蒸気と反応
し、原料の塊の表面に反応生成物が現れる。Many raw materials for film formation are chemically stable, but some are chemically unstable. When such an unstable substance is exposed to the atmosphere after the film forming process, it reacts with components in the atmosphere, such as oxygen and water vapor, and reaction products appear on the surface of the lump of the raw material.
【０００６】ちなみに、鉛、ストロンチウムおよび硫黄
からなるＰｂＳｒＳ結晶膜を成長させるときには、Ｐｂ
Ｓ（硫化鉛）とＳｒ（ストロンチウム）の塊が原料とし
て用いられるが、Ｓｒは化学的に不安定であるため、Ｓ
ｒ塊の表面に水酸化ストロンチウムが生成されやすい。
このため、例えば第１回目の成膜をした後に大気中で基
板を取り換え、次の成膜プロセスを実行すると、表面に
大気成分との反応生成物が付着したＳｒ塊からのＳｒの
蒸発が、第１回目に比べて好適になされず、良好な成膜
ができない。Incidentally, when a PbSrS crystal film made of lead, strontium and sulfur is grown, Pb
A lump of S (lead sulfide) and Sr (strontium) is used as a raw material, but since Sr is chemically unstable, S
Strontium hydroxide is easily generated on the surface of the r-lump.
Therefore, for example, when the substrate is replaced in the atmosphere after the first film formation and the next film formation process is performed, the evaporation of Sr from the Sr lump whose reaction product with the atmospheric component adheres to the surface is As compared with the first time, the film is not made suitable and a good film cannot be formed.
【０００７】本発明は、このような従来技術の欠点を克
服するため完成されたもので、化学的に不安定な物質を
原料の一部もしくは全部とする結晶膜を安定かつ良好に
成長できる成膜装置と、これに用いられる成膜用蒸発源
装置を提供することを目的とする。The present invention has been completed in order to overcome the drawbacks of the prior art, and a crystal film containing a chemically unstable substance as a part or all of the raw material can be grown stably and satisfactorily. An object is to provide a film device and a film-forming evaporation source device used for the film device.
【０００８】[0008]
【課題を解決するための手段】本発明に係る成膜装置
は、第１の原料（例えばＰｂＳ）と、この第１の原料よ
り大気中の成分と反応性の高い第２の原料（例えばＳ
ｒ）とを真空中に蒸発させ、基板上に第１および第２の
原料を含む結晶膜（例えばＰｂＳｒＳ）を成長させる装
置において、第１の原料を加熱（例えば５６０℃）して
蒸発させる第１の蒸発源手段と、第２の原料を加熱して
蒸発させる第２の蒸発源手段とを備え、この第２の蒸発
源手段は、第２の原料の塊が配置される原料塊配置部材
と、原料塊配置部材を、表面に大気中の成分との反応生
成物（例えば水酸化ストロンチウム）を有する第２の原
料の塊を蒸発させるのに十分な温度（例えば７００℃）
に加熱する原料塊加熱手段と、第２の原料の塊から蒸発
させた当該第２の原料の膜が表面に堆積される原料膜堆
積部材と、原料膜堆積部材を加熱（例えば４７０℃）し
て第２の原料膜を蒸発させる原料膜加熱手段とを有する
ことを特徴とする。A film forming apparatus according to the present invention comprises a first raw material (for example, PbS) and a second raw material (for example, Sb) which has a higher reactivity with a component in the atmosphere than the first raw material.
r) is evaporated in a vacuum to grow a crystal film containing the first and second raw materials (for example, PbSrS) on the substrate, and the first raw material is heated (for example, 560 ° C.) to be vaporized. 1 evaporation source means and 2nd evaporation source means which heats and evaporates a 2nd raw material, and this 2nd evaporation source means is a raw material lump arrangement member in which the lump of a 2nd raw material is arrange | positioned. And a temperature sufficient to evaporate the mass of the second raw material having a reaction product (for example, strontium hydroxide) on the surface of the raw material lump disposing member, for example, 700 ° C.
To heat the raw material lump heating means, the raw material film deposition member on which the film of the second raw material evaporated from the second raw material lump is deposited on the surface, and the raw material film deposition member are heated (for example, 470 ° C.). And a second raw material film heating means for evaporating the second raw material film.
【０００９】ここで、第２の原料（例えばＳｒ）が第１
の原料の構成元素（例えばＳ）との反応性が高いとき
は、原料塊加熱手段は第１の原料の構成元素との反応生
成物（例えばＳｒＳ）を表面に有する第２の原料の塊を
蒸発させるのに十分な温度に原料塊配置部材を加熱す
る。Here, the second raw material (for example, Sr) is the first
When the reactivity with the constituent element (for example, S) of the raw material is high, the raw material lump heating means forms the second raw material lump having the reaction product (for example, SrS) with the constituent element of the first raw material on the surface. The material mass placement member is heated to a temperature sufficient to cause evaporation.
【００１０】本発明に係る成膜用蒸発源装置は、基板上
に結晶膜を成長させるための原料を、加熱して真空中に
蒸発させる装置において、頂部に絞られて突出する開口
を有し底部に原料の塊が配置される容器と、表面に大気
中の成分との反応生成物を有する原料の塊を蒸発させて
原料の膜を容器の内面に堆積させるのに十分な温度に容
器の底部を加熱する原料塊加熱手段と、容器の側壁を加
熱して原料の膜を蒸発させる原料膜加熱手段とを備える
ことを特徴とする。The evaporation source apparatus for film formation according to the present invention is an apparatus for heating a raw material for growing a crystal film on a substrate to evaporate it into a vacuum, and has an opening narrowed and projected at the top. A container in which a lump of the raw material is arranged at the bottom and a lump of the raw material having a reaction product with a component in the atmosphere on the surface are evaporated to a temperature sufficient to deposit a film of the raw material on the inner surface of the container. It is characterized by comprising a raw material lump heating means for heating the bottom portion, and a raw material film heating means for heating the side wall of the container to evaporate the raw material film.
【００１１】また、本発明に係る成膜用蒸発源装置は、
基板上に結晶膜を成長させるための第１および第２の原
料をそれぞれ加熱して真空中に蒸発させる装置におい
て、頂部に開口を有すると共にほぼ中間部に隔壁を有
し、当該隔壁のほぼ中央部には上方に絞られて突出する
開口が形成され、第２の原料の塊はその底部に、第１の
原料は隔壁上に配置される容器と、表面に大気中の成分
との反応生成物を有する第２の原料の塊を蒸発させて第
２の原料の膜を容器内面に堆積させるのに十分な温度に
容器の底部を加熱する原料塊加熱手段と、容器の隔壁下
方の側壁を加熱して第２の原料の膜を蒸発させる原料加
熱手段と、容器の隔壁上部の側壁を加熱して第１の原料
を蒸発させる加熱手段とを備えることを特徴とする。Further, the evaporation source device for film formation according to the present invention is
An apparatus for heating a first raw material and a second raw material for growing a crystal film on a substrate and evaporating the raw material in a vacuum, wherein an opening is provided at the top and a partition is provided substantially at an intermediate portion of the partition. An opening that is squeezed upward is formed in the section, and the reaction mass is formed between the container in which the second raw material mass is placed at the bottom and the first raw material is placed on the partition wall, and the components in the atmosphere on the surface. A mass of raw material for heating the bottom of the container to a temperature sufficient to evaporate the mass of the second raw material having a substance and deposit a film of the second raw material on the inner surface of the container; A raw material heating means for heating to vaporize the film of the second raw material and a heating means for heating the side wall of the upper part of the partition of the container to vaporize the first raw material are provided.
【００１２】ここで、第２の原料（例えばＳｒ）が第１
の原料の構成元素（例えばＳ）との反応性が高いとき
は、原料塊加熱手段は第１の原料の構成元素との反応生
成物（例えばＳｒＳ）を表面に有する第２の原料の塊を
蒸発させて第２の原料の膜を容器内面に堆積させるのに
十分な温度に容器の底部を加熱する。Here, the second raw material (for example, Sr) is the first
When the reactivity with the constituent element (for example, S) of the raw material is high, the raw material lump heating means forms the second raw material lump having the reaction product (for example, SrS) with the constituent element of the first raw material on the surface. The bottom of the container is heated to a temperature sufficient to evaporate and deposit a film of the second source material on the inner surface of the container.
【００１３】[0013]
【作用】本発明に係る成膜装置によれば、化学的に安定
な第１の原料は第１の蒸発源手段で、不安定な第２の原
料は第２の蒸発源手段で蒸発させるが、後者について
は、原料塊を加熱する手段と、原料塊からの蒸気により
原料膜が堆積される部材と、この原料膜を加熱する手段
とを備えている。そして、上記の原料塊の加熱は、表面
に大気成分、または他の原料の構成元素との反応生成物
を有する原料塊が蒸発するのに十分な温度とされるた
め、原料塊の状態で化学的な不安定性ゆえに表面に反応
生成物が現れていたとしても、反応生成物をほとんど含
まない原料膜を生成できる。したがって、この原料膜を
蒸発源として好適に第２の原料の蒸発をなし得るので、
安定かつ良好な結晶膜を成長できる。According to the film forming apparatus of the present invention, the chemically stable first raw material is vaporized by the first evaporation source means and the unstable second raw material is vaporized by the second evaporation source means. Regarding the latter, it is provided with a means for heating the raw material lump, a member for depositing the raw material film by the vapor from the raw material lump, and a means for heating the raw material film. Since the heating of the raw material lump is performed at a temperature sufficient to evaporate the raw material lump having a reaction product with an atmospheric component or another raw material constituent element on the surface, the raw material lump is chemically heated in the state of the raw material lump. Even if the reaction product appears on the surface due to the instability of the material, a raw material film containing almost no reaction product can be formed. Therefore, the second raw material can be suitably evaporated by using this raw material film as the evaporation source.
A stable and excellent crystal film can be grown.
【００１４】本発明の成膜用蒸発源装置では、底部に原
料塊の置かれる容器が、頂部に絞られて突出する開口を
有しているため、底部のみを原料塊が蒸発する温度（表
面に反応生成物のある原料塊が蒸発するのに十分な温
度）に加熱することで、容器の底部以外の内面には大気
成分との反応生成物をほとんど含まない原料膜を形成で
きる。そして、この原料膜は容器の壁面を介して加熱さ
れるので、これを原料の蒸発源として成膜用原料を気相
空間に供給できる。In the evaporation source apparatus for film formation of the present invention, since the container in which the raw material block is placed has the opening which is squeezed and protrudes at the top, the temperature (surface By heating to a temperature sufficient to evaporate the raw material lump containing the reaction product), a raw material film containing almost no reaction product with atmospheric components can be formed on the inner surface other than the bottom of the container. Since this raw material film is heated via the wall surface of the container, the raw material for film formation can be supplied to the vapor phase space by using this as the evaporation source of the raw material.
【００１５】また、本発明の別の成膜用蒸発源装置によ
れば、容器は上方に突出した開口を有する隔壁により、
上、下の２室に区分され、下側区分に化学的に不安定な
第２の原料の蒸発源、上側区分に安定な第１の原料の蒸
発源が設定される。そして、下側区分については、底部
の原料塊を加熱して内面に原料膜を成長させ、この原料
膜を蒸発させて蒸気を開口から上方に供給している。よ
って上方の２つの開口（二重構造の開口）からは、安定
な第１の原料と不安定な第２の原料を、それぞれ気相空
間に放出させることができる。According to another evaporation source apparatus for film formation of the present invention, the container has a partition wall having an opening projecting upward,
It is divided into two chambers, an upper chamber and a lower chamber, and a chemically unstable second raw material evaporation source is set in the lower section and a stable first raw material evaporation source is set in the upper section. In the lower section, the raw material mass at the bottom is heated to grow a raw material film on the inner surface, the raw material film is evaporated, and vapor is supplied upward from the opening. Therefore, the stable first raw material and the unstable second raw material can be discharged into the gas phase space from the upper two openings (double-structured openings), respectively.
【００１６】[0016]
【実施例】以下、図面を参照して本発明の実施例を説明
する。なお、同一の要素には同一の符号を付し、重複説
明は省略する。Embodiments of the present invention will be described below with reference to the drawings. The same elements will be denoted by the same reference symbols, without redundant description.
【００１７】図１は、実施例に係る成膜装置の要部を示
し、左半分は側面図、右半分は断面図である。原料を収
容する容器（るつぼ）は上側半体１１と下側半体１２か
らなり、共に断面円筒形状であって、上側半体１１の内
径は下側半体１２の外形よりも僅かに大きく、嵌め込み
接合されて一体になっている。上側半体１１は下端近傍
に隔壁１３を有し、その略中央部分は上方に絞られて突
出した筒体１４を形成している。下側半体１２は上方の
み開口し、その開口端は上側半体１１の隔壁１３に当接
し、底部は略半球形状に成型されている。FIG. 1 shows a main part of a film forming apparatus according to an embodiment. The left half is a side view and the right half is a sectional view. The container (crucible) for containing the raw material is composed of an upper half body 11 and a lower half body 12, both of which have a cylindrical cross section, and the inner diameter of the upper half body 11 is slightly larger than the outer shape of the lower half body 12. It is fitted and joined to form an integral unit. The upper half 11 has a partition wall 13 near the lower end, and a substantially central portion thereof forms a cylindrical body 14 that is squeezed upward and protrudes. The lower half body 12 is open only at the upper side, the opening end is in contact with the partition wall 13 of the upper half body 11, and the bottom part is formed in a substantially hemispherical shape.
【００１８】容器の外側には、下から第１，第２および
第３のヒータ２１，２２，２３が設けられ、各ヒータ２
１，２２，２３に対応して、各部の温度を測定する熱電
対３１，３２，３３が設けられている。ここで、第１の
ヒータ２１は主として容器の下側半体１２底部を加熱
し、第２のヒータ２２は下側半体１２の側壁部を加熱
し、第３のヒータ２３は上側半体１１の隔壁１３の上部
近傍を加熱する。Outside the container, first, second and third heaters 21, 22, 23 are provided from the bottom, and each heater 2
Thermocouples 31, 32, 33 for measuring the temperature of each part are provided corresponding to 1, 22, 23. Here, the first heater 21 mainly heats the bottom of the lower half 12 of the container, the second heater 22 heats the side wall of the lower half 12, and the third heater 23 heats the upper half 11 of the container. The upper part of the partition 13 is heated.
【００１９】容器の上側半体１１の開口上方には開閉自
在のシャッタ４が設けられ、その上方に基板ホルダ５が
取り付けられ、ここに成膜すべき基板６が載置される。
そして、基板ホルダ５の上方には基板６を加熱するため
の第４のヒータ２４が配設され、これに対応して熱電対
３４が設けられている。An openable and closable shutter 4 is provided above the opening of the upper half body 11 of the container, a substrate holder 5 is attached above the shutter 4, and a substrate 6 to be deposited is placed thereon.
A fourth heater 24 for heating the substrate 6 is provided above the substrate holder 5, and a thermocouple 34 is provided corresponding to the fourth heater 24.
【００２０】図１の装置を用いて基板６に成膜する手順
を説明する。A procedure for forming a film on the substrate 6 using the apparatus shown in FIG. 1 will be described.
【００２１】まず、大気中で結晶膜用の二種の原料塊を
容器に入れるが、下側半体１２の底部に配置する原料塊
は化学的に不安定なもの、上側半体１１の隔壁１３上に
配置する原料塊は化学的に安定なものとする。そして、
真空装置のチャンバ（図示せず）を閉じ、真空ポンプ
（図示せず）を駆動して真空下で第１のヒータ２１に端
子ＴＭ1 を介して通電する。このとき、シャッタ４は閉
じられており、また下側半体１２の底部の温度は原料塊
の蒸発温度よりも高温、すなわち原料塊の表面に大気中
の酸素、水素等との反応生成物があっても、原料物質が
充分に蒸発する高温とする。First, two kinds of raw material lumps for a crystal film are put in a container in the atmosphere, but the raw material lumps arranged at the bottom of the lower half 12 are chemically unstable, and the partition walls of the upper half 11 are separated. The raw material block placed on 13 should be chemically stable. And
A chamber (not shown) of the vacuum device is closed, and a vacuum pump (not shown) is driven to energize the first heater 21 under vacuum through the terminal TM 1 . At this time, the shutter 4 is closed, and the temperature of the bottom of the lower half body 12 is higher than the evaporation temperature of the raw material lump, that is, the reaction product with oxygen, hydrogen, etc. in the atmosphere is present on the surface of the raw material lump. Even if there is, the temperature is high enough to sufficiently evaporate the raw materials.
【００２２】次に、第１のヒータ２１による加熱を止
め、第２のヒータ２２と第３のヒータ２３による加熱を
同時に開始する。すなわち、端子ＴＭ2 と端子ＴＭ3 か
ら通電を同時に開始するが、このときの下側半体１２の
側壁の温度（熱電対３２で測定される温度）は、表面に
上記の反応生成物がない化学的に不安定な原料塊から蒸
発がなされ得る温度とする。また、上側半体１１の下部
の温度（熱電対３３で測定される温度）は、化学的に安
定な原料塊から蒸発がなされ得る温度とする。Next, the heating by the first heater 21 is stopped, and the heating by the second heater 22 and the third heater 23 is simultaneously started. That is, the energization is started from the terminals TM 2 and TM 3 at the same time, but the temperature of the side wall of the lower half body 12 (the temperature measured by the thermocouple 32) at this time is that there is no reaction product on the surface. The temperature is such that evaporation can be performed from the chemically unstable raw material mass. The temperature of the lower part of the upper half body 11 (the temperature measured by the thermocouple 33) is set to a temperature at which evaporation can be performed from the chemically stable raw material block.
【００２３】このようにして原料の蒸発が始まったら、
シャッタ４を開放にする。これにより、蒸発物質は真空
中を基板６に向かって輸送され、基板６の裏面に化学的
に安定な原料と不安定な原料の化合物からなる結晶膜が
成膜される。なお、この状態では基板６は第４のヒータ
２４によって成膜に好適な温度に加熱されているものと
する。When the evaporation of the raw materials starts in this way,
The shutter 4 is opened. As a result, the vaporized substance is transported toward the substrate 6 in a vacuum, and a crystal film made of a chemically stable raw material and an unstable raw material compound is formed on the back surface of the substrate 6. In this state, the substrate 6 is heated by the fourth heater 24 to a temperature suitable for film formation.
【００２４】一定時間の成膜が完了したら、シャッタ４
を閉じて第１〜第４のヒータ２１〜２４への通電を全て
停止し、真空下で冷却する。そして、室温近くまで冷却
した後、バルブ（図示せず）を開放してチャンバ内を大
気圧とし、チャンバを開く。次に、成膜済みの基板６を
取り出して新しい基板６を基板ホルダ５にセットし、チ
ャンバを密閉する。そして、真空ポンプを作動させて再
び真空状態とし、上記したプロセスを繰り返す。When film formation for a certain period of time is completed, the shutter 4
Is closed to stop all energization to the first to fourth heaters 21 to 24, and cooling is performed under vacuum. Then, after cooling to near room temperature, a valve (not shown) is opened to bring the inside of the chamber to atmospheric pressure, and the chamber is opened. Next, the substrate 6 on which the film has been formed is taken out, a new substrate 6 is set on the substrate holder 5, and the chamber is sealed. Then, the vacuum pump is operated to return to the vacuum state, and the above process is repeated.
【００２５】本実施例では、上記のように、化学的に不
安定な原料を蒸発させるに際しては、二段階の加熱プロ
セスを採用している。このため、不安定な原料について
も安定な原料と同様に好適な蒸発を行なうことができ
る。In the present embodiment, as described above, a two-step heating process is adopted when vaporizing the chemically unstable raw material. For this reason, it is possible to perform suitable vaporization on an unstable raw material as well as a stable raw material.
【００２６】本実施例の特徴および効果を、図２により
説明する。ここで、成膜されるのはＰｂＳｒＳであると
し、化学的に安定な原料はＰｂＳ、不安定な原料はＳｒ
である。The features and effects of this embodiment will be described with reference to FIG. Here, it is assumed that the film formed is PbSrS, the chemically stable raw material is PbS, and the unstable raw material is Sr.
Is.
【００２７】まず、図２（ａ）のように、容器の上側半
体１１にはＰｂＳ塊、下側半体１２にはＳｒ塊をセット
する。そして、真空状態としてＳｒ塊を温度Ｔ1 に加熱
する。ここで、化学的に不安定なＳｒ塊は表面に水酸化
ストロンチウムを有しており、通常のＳｒの蒸発温度Ｔ
2 では良好に蒸発しない。そこで、通常の温度（約４７
０℃）よりも高い温度Ｔ1 （約７００℃）とし、Ｓｒを
蒸発させる。First, as shown in FIG. 2A, a PbS mass is set in the upper half body 11 and an Sr mass is set in the lower half body 12. Then, the Sr mass is heated to a temperature T 1 in a vacuum state. Here, the chemically unstable Sr lump has strontium hydroxide on the surface, and the normal Sr evaporation temperature T
2 does not evaporate well. Therefore, the normal temperature (about 47
The temperature T 1 (about 700 ° C.) higher than 0 ° C.) is used to evaporate Sr.
【００２８】すると、図２（ｂ）に示すように、Ｓｒ塊
からのＳｒ蒸気が下側半体１２の内面に衝突し、Ｓｒ膜
が形成される。このＳｒ膜についても、化学的に不安定
であることは言うまでもないが、内部は真空に維持され
ているので、大気の成分との反応は生じない。Then, as shown in FIG. 2B, the Sr vapor from the Sr mass collides with the inner surface of the lower half body 12 to form an Sr film. Needless to say, this Sr film is also chemically unstable, but since the inside is maintained in vacuum, it does not react with atmospheric components.
【００２９】そこで、図２（ｃ）に示すように、下側半
体１２の側壁をＳｒの通常の蒸発温度Ｔ2 にすると同時
に、上側半体１１の下部をＰｂＳの蒸発温度（約５６０
℃）とする。これにより、双方の原料ＳｒおよびＰｂＳ
からの蒸発が始まり、基板６にＰｂＳｒＳ膜が成長され
る。Therefore, as shown in FIG. 2C, the side wall of the lower half 12 is set to the normal evaporation temperature T 2 of Sr, and at the same time, the lower half of the upper half 11 is evaporated to PbS (about 560).
℃). As a result, both raw materials Sr and PbS
Starts to evaporate, and a PbSrS film is grown on the substrate 6.
【００３０】基板６への成膜が終了すると、全体が冷却
されて真空が破られ、大気が導入される。これにより、
容器の下側半体１２底部のＳｒ塊の表面と、下側半体１
２内面の残留Ｓｒ膜は水酸化ストロンチウムに変質す
る。しかし、成膜後の基板６を新しい基板６に換えた後
の次の成膜プロセスでは、再びＳｒ塊は通常温度Ｔ
2（４７０℃）より高い温度Ｔ1 （７００℃）にされる
ので、Ｓｒ塊からのＳｒの蒸発に故障はない。また、容
器の下側半体１２内面には、新しいＳｒ膜が残留してい
る水酸化ストロンチウムの上に形成されるので、通常温
度Ｔ2 での蒸発に支障はない。When the film formation on the substrate 6 is completed, the whole is cooled, the vacuum is broken, and the atmosphere is introduced. This allows
The surface of the Sr mass at the bottom of the lower half 12 of the container and the lower half 1
2 The residual Sr film on the inner surface is transformed into strontium hydroxide. However, in the next film formation process after the substrate 6 after film formation is replaced with a new substrate 6, the Sr lumps are again formed at the normal temperature T
Since the temperature T 1 (700 ° C.) higher than 2 (470 ° C.) is used, there is no failure in the evaporation of Sr from the Sr mass. Further, since a new Sr film is formed on the remaining strontium hydroxide on the inner surface of the lower half body 12 of the container, there is no problem in evaporation at the normal temperature T 2 .
【００３１】本実施例によれば、不安定なＳｒは容器の
下側半体１２内面という一定面積から蒸発されるので、
温度コントロールにより一定速度の蒸発コントロールを
なし得る。このため、表面に水酸化ストロチウムの膜や
粒子が付着したＳｒ塊から蒸発させる場合と比べて、極
めて高精度の膜厚制御をなし得る。According to this embodiment, unstable Sr is vaporized from a constant area of the inner surface of the lower half body 12 of the container.
A constant rate of evaporation control can be achieved by controlling the temperature. Therefore, the film thickness can be controlled with extremely high accuracy as compared with the case of evaporating from a Sr lump in which a strontium hydroxide film or particles adhere to the surface.
【００３２】本発明の成膜装置および蒸発源装置は、上
記の実施例に限らず、種々の変更が可能である。The film forming apparatus and the evaporation source apparatus of the present invention are not limited to the above embodiments, but various modifications can be made.
【００３３】まず、化学的に不安定な材料とは、大気成
分との反応性の高いものだけでなく、同時に用いられる
他の原料の構成元素との反応性の高いものも含まれる。
ちなみに、ＰｂＳｒＳ結晶の成長において、原料を収容
した装置内において、昇温、成長、徐冷等を行なうとき
には、成長室内の残留ガスを真空引きしながら成長させ
るが、一部は成長室内に残る。すると、温度条件によっ
てはＳｒの塊の表面にＳｒＳが生成することがあり、こ
れが水酸化ストロンチウムと同様の害を与える。そこ
で、上記実施例と同様に第１段階として原料塊から原料
膜を形成し、次に第２段階として原料膜を蒸発させれ
ば、上記の不具合は克服できる。First, the chemically unstable material includes not only a material having a high reactivity with atmospheric components but also a material having a high reactivity with the constituent elements of other raw materials used at the same time.
Incidentally, in the growth of the PbSrS crystal, when the temperature is raised, the growth, the gradual cooling, etc. are performed in the apparatus containing the raw material, the residual gas in the growth chamber is grown while being evacuated, but a part remains in the growth chamber. Then, depending on the temperature conditions, SrS may be generated on the surface of the Sr lump, which causes the same damage as strontium hydroxide. Therefore, if the raw material film is formed from the raw material mass as the first step and then the raw material film is evaporated as the second step, as in the above-described embodiment, the above-mentioned problems can be overcome.
【００３４】蒸発源装置については、図１および図２の
実施例では容器（るつぼ）を上下の半体で構成し、いわ
ゆる二段構成としているが、化学的に不安定な原料塊の
加熱と、これにより生じた原料膜の加熱とを、分離して
行ない得る構成であれば十分であり、安定な原料塊の蒸
発機構と一体化されている必要はない。つまり、図３に
示す如く、つぼ状るつぼ１０Ａを用意し、この底部を温
度Ｔ1 に、側壁部を温度Ｔ2 に加熱できるヒータ（図示
せず）を付設すればよい。Regarding the evaporation source device, in the embodiment shown in FIGS. 1 and 2, the container (crucible) is composed of upper and lower halves and has a so-called two-stage structure. However, it is sufficient that the heating of the raw material film generated thereby can be performed separately, and it is not necessary to be integrated with a stable evaporation mechanism of the raw material mass. That is, as shown in FIG. 3, a crucible 10A may be prepared, and a heater (not shown) capable of heating the bottom portion to the temperature T 1 and the side wall portion to the temperature T 2 may be attached.
【００３５】この場合には、例えば試験管型るつぼ１０
Ｂが別に用意され、ここに化学的に安定な原料塊が入れ
られる。そして、シャッタ４および基板ホルダ５と共に
チャンバ７内に収容されることにより、本発明の成膜装
置が構成される。したがって、例えば従来のクヌーセン
型るつぼを用い、底部を温度Ｔ1 に、側部を温度Ｔ2に
加熱するヒータを設けた場合にも、本発明の成膜用蒸発
源装置が構成される。In this case, for example, the test tube type crucible 10 is used.
B is prepared separately, and a chemically stable raw material mass is put therein. By accommodating the shutter 4 and the substrate holder 5 in the chamber 7, the film forming apparatus of the present invention is configured. Therefore, for example, when a conventional Knudsen type crucible is used and a heater for heating the bottom portion to the temperature T 1 and the side portions to the temperature T 2 is provided, the evaporation source device for film formation of the present invention is configured.
【００３６】本発明において成膜される結晶膜は、例え
ばアルカリ土類金属や希土類金属を含む混晶化合物半導
体膜であり、例えば、ＰｂＳｅ（セレン化鉛）、ＺｎＳ
（硫化亜鉛）、ＺｎＳｅ（セレン化亜鉛）などの安定な
材料にＳｒ（ストロンチウム）、Ｅｕ（ユーロピウム）
などの不安定な物質を含んだ膜である。そして、例えば
ＰｂＳｒＳはＰｂＳを活性層とする半導体レーザのクラ
ッド層として用いることができ、波長３μｍ帯の長波長
半導体レーザが得られる。The crystal film formed in the present invention is a mixed crystal compound semiconductor film containing, for example, an alkaline earth metal or a rare earth metal, and for example, PbSe (lead selenide), ZnS.
Sr (strontium), Eu (europium) for stable materials such as (zinc sulfide) and ZnSe (zinc selenide)
It is a film containing unstable substances such as. Then, for example, PbSrS can be used as a clad layer of a semiconductor laser having PbS as an active layer, and a long wavelength semiconductor laser having a wavelength band of 3 μm can be obtained.
【００３７】[0037]
【発明の効果】以上、詳細に説明した通り本発明によれ
ば、化学的に不安定な原料塊を通常の蒸発温度よりも高
温に加熱し、中間体としての原料膜を真空中で形成でき
るので、通常の温度で原料膜を加熱するだけで、原料の
蒸発を安定して好適になし得る。このため、化学的に不
安定な原料を含む化合物結晶膜を、高精度の組成制御と
膜厚制御の下で成長できる効果がある。なお、特開平２
−２１７４６４号には２段階で加熱する蒸発源が開示さ
れているが、これは、るつぼ壁の未使用原料を蒸発させ
て原料の成分比が変動しないようにしたものであり、本
発明の効果は全く得られない。As described above in detail, according to the present invention, a chemically unstable raw material mass can be heated to a temperature higher than a normal evaporation temperature to form a raw material film as an intermediate in a vacuum. Therefore, only by heating the raw material film at a normal temperature, it is possible to stably and suitably evaporate the raw material. Therefore, there is an effect that a compound crystal film containing a chemically unstable raw material can be grown under highly precise composition control and film thickness control. In addition, JP-A-2
No. 217464 discloses an evaporation source that heats in two steps. This is to evaporate the unused raw material of the crucible wall so that the component ratio of the raw material does not change, and the effect of the present invention. Can't get at all.
【図１】本発明の実施例に係る成膜用蒸発源装置と、こ
れを用いた成膜装置を示す図である。FIG. 1 is a diagram showing an evaporation source device for film formation according to an embodiment of the present invention and a film formation device using the same.
【図２】図１の実施例による化合物膜の成長工程を示す
図である。FIG. 2 is a diagram showing a process of growing a compound film according to the embodiment of FIG.
【図３】変形例に係る成膜用蒸発源装置と、これを用い
た成膜装置を示す図である。FIG. 3 is a diagram showing a film formation evaporation source device according to a modified example and a film formation device using the same.
１１…容器（るつぼ）の上側半体、１２…容器（るつ
ぼ）の下側半体、１３…上下の隔壁、２１…化学的に不
安定な原料塊を加熱する第１のヒータ、２２…化学的に
不安定な原料膜を加熱する第２のヒータ、２３…化学的
に安定な原料を加熱する第３のヒータ、２４…基板を加
熱する第４のヒータ、４…シャッタ、５…基板ホルダ、
６…基板。11 ... Upper half of container (crucible), 12 ... Lower half of container (crucible), 13 ... Upper and lower partition walls, 21 ... First heater for heating chemically unstable raw material mass, 22 ... Chemistry Second heater for heating a chemically unstable raw material film, 23 ... Third heater for heating a chemically stable raw material, 24 ... Fourth heater for heating a substrate, 4 ... Shutter, 5 ... Substrate holder ,
6 ... substrate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤安 洋 静岡県浜松市遠州浜１丁目33番８号 (72)発明者 桑原 正和 静岡県浜松市市野町1126番地の１ 浜松ホ トニクス株式会社内 (72)発明者 菅 博文 静岡県浜松市市野町1126番地の１ 浜松ホ トニクス株式会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Hiroshi Fujian 1-33-8 Enshuhama, Hamamatsu City, Shizuoka Prefecture (72) Inventor Masakazu Kuwahara 1126, Ichinomachi, Hamamatsu City, Shizuoka Prefecture Hamamatsu Photonics Co., Ltd. (72) Inventor Hirofumi Suga 1 Hamamatsu Photonics Co., Ltd. 1 1126 Nomachi, Hamamatsu City, Shizuoka Prefecture
Claims (5)
中の成分と反応性の高い第２の原料とを真空中に蒸発さ
せ、基板上に前記第１および第２の原料を含む結晶膜を
成長させる成膜装置において、 前記第１の原料を加熱して蒸発させる第１の蒸発源手段
と、 前記第２の原料を加熱して蒸発させる第２の蒸発源手段
とを備え、 前記第２の蒸発源手段は、 前記第２の原料の塊が配置される原料塊配置部材と、 前記原料塊配置部材を、表面に大気中の成分との反応生
成物を有する前記第２の原料の塊を蒸発させるのに十分
な温度に加熱する原料塊加熱手段と、 前記第２の原料の塊から蒸発させた当該第２の原料の膜
が表面に堆積される原料膜堆積部材と、 前記原料膜堆積部材を加熱して前記第２の原料の膜を蒸
発させる原料膜加熱手段とを有することを特徴とする成
膜装置。1. A first raw material and a second raw material, which has a higher reactivity with components in the atmosphere than the first raw material, are evaporated into a vacuum to deposit the first and second raw materials on a substrate. A film forming apparatus for growing a crystal film including: first evaporation source means for heating and evaporating the first raw material; and second evaporation source means for heating and evaporating the second raw material. The second evaporation source means has a raw material lump arranging member on which the lump of the second raw material is arranged, and the second raw material lump arranging member having a reaction product on the surface thereof with a component in the atmosphere. A raw material lump heating means for heating the raw material lump to a temperature sufficient to evaporate the raw material lump; and a raw material film deposition member on which a film of the second raw material evaporated from the second raw material lump is deposited on the surface. A source film heating means for heating the source film deposition member to evaporate the second source film. Film-forming apparatus according to claim Rukoto.
を、加熱して真空中に蒸発させる成膜用蒸発源装置にお
いて、 頂部に絞られて突出する開口を有し、底部に前記原料の
塊が配置される容器と、 表面に大気中の成分との反応生成物を有する前記原料の
塊を蒸発させて前記原料の膜を前記容器の内面に堆積さ
せるのに十分な温度に前記容器の底部を加熱する原料塊
加熱手段と、 前記容器の側壁を加熱して前記原料の膜を蒸発させる原
料膜加熱手段とを備えることを特徴とする成膜用蒸発源
装置。2. An evaporation source device for film formation, wherein a raw material for growing a crystal film on a substrate is heated to evaporate in a vacuum, wherein the raw material has a projecting opening narrowed to the top and the raw material at the bottom. A container in which a lump of the raw material is placed, and the container at a temperature sufficient to evaporate the lump of the raw material having a reaction product with a component in the atmosphere on the surface to deposit a film of the raw material on the inner surface of the container. And a raw material film heating means for heating the side wall of the container to evaporate the raw material film.
および第２の原料をそれぞれ加熱して真空中に蒸発させ
る成膜用蒸発源装置において、 頂部に開口を有すると共にほぼ中間部に隔壁を有し、当
該隔壁のほぼ中央部には上方に絞られて突出する開口が
形成され、前記第２の原料の塊はその底部に、前記第１
の原料は前記隔壁上に配置される容器と、 表面に大気中の成分との反応生成物を有する前記第２の
原料の塊を蒸発させて前記第２の原料の膜を前記容器内
面に堆積させるのに十分な温度に前記容器の底部を加熱
する原料塊加熱手段と、 前記容器の前記隔壁下方の側壁を加熱して前記第２の原
料の膜を蒸発させる原料膜加熱手段と、 前記容器の前記隔壁上部の側壁を加熱して前記第１の原
料を蒸発させる加熱手段とを備えることを特徴とする成
膜用蒸発源装置。3. A first for growing a crystal film on a substrate.
And an evaporation source device for film formation, which heats and evaporates the second raw material into a vacuum, respectively, and has an opening at the top and a partition wall at a substantially middle portion, and is squeezed upward at a substantially central portion of the partition wall. And a second mass of raw material is formed at the bottom of the first raw material.
Is a container placed on the partition wall, and a lump of the second raw material having a reaction product with a component in the atmosphere on the surface is evaporated to deposit a film of the second raw material on the inner surface of the container. A raw material lump heating means for heating the bottom of the container to a temperature sufficient to allow the raw material film heating means for heating a side wall of the container below the partition wall to evaporate the second raw material film; A heating means for heating the side wall above the partition wall to evaporate the first raw material.
素との反応性の高い第２の原料とを真空中に蒸発させ、
基板上に前記第１および第２の原料を含む結晶膜を成長
させる成膜装置において、 前記第１の原料を加熱して蒸発させる第１の蒸発源手段
と、 前記第２の原料を加熱して蒸発させる第２の蒸発源手段
とを備え、 前記第２の蒸発源手段は、 前記第２の原料の塊が配置される原料塊配置部材と、 前記原料塊配置部材を、表面に前記第１の原料の構成元
素との反応生成物を有する前記第２の原料の塊を蒸発さ
せるのに十分な温度に加熱する原料塊加熱手段と、 前記第２の原料の塊から蒸発させた当該第２の原料の膜
が表面に堆積される原料膜堆積部材と、 前記原料膜堆積部材を加熱して前記第２の原料の膜を蒸
発させる原料膜加熱手段とを有することを特徴とする成
膜装置。4. A first raw material and a second raw material having high reactivity with the constituent elements of the first raw material are evaporated in a vacuum,
In a film forming apparatus for growing a crystal film containing the first and second raw materials on a substrate, first evaporation source means for heating and vaporizing the first raw material, and heating the second raw material. And a second evaporation source means for evaporating the second raw material, wherein the second evaporation source means has a raw material lump arranging member on which the lump of the second raw material is arranged, and the raw material lump arranging member on the surface thereof. A raw material lump heating means for heating the lump of the second raw material having a reaction product with the constituent element of the first raw material to a temperature sufficient to vaporize the lump of the second raw material; A film formation method comprising: a material film deposition member on which a second material film is deposited on a surface; and material film heating means for heating the material film deposition member to evaporate the second material film. apparatus.
および第２の原料をそれぞれ加熱して真空中に蒸発させ
る成膜用蒸発源装置において、 頂部に開口を有すると共にほぼ中間部に隔壁を有し、当
該隔壁のほぼ中央部には上方に絞られて突出する開口が
形成され、前記第１の原料の構成元素との反応性の高い
前記第２の原料の塊はその底部に、前記第１の原料は前
記隔壁上に配置される容器と、 表面に前記第１の原料の構成元素との反応生成物を有す
る前記第２の原料の塊を蒸発させて前記第２の原料の膜
を前記容器内面に堆積させるのに十分な温度に前記容器
の底部を加熱する原料塊加熱手段と、 前記容器の前記隔壁下方の側壁を加熱して前記第２の原
料の膜を蒸発させる原料膜加熱手段と、 前記容器の前記隔壁上部の側壁を加熱して前記第１の原
料を蒸発させる加熱手段とを備えることを特徴とする成
膜用蒸発源装置。5. A first for growing a crystal film on a substrate.
And an evaporation source device for film formation, which heats and evaporates the second raw material into a vacuum, respectively, and has an opening at the top and a partition wall at a substantially middle portion, and is squeezed upward at a substantially central portion of the partition wall. A container in which a bulge of the second raw material having a high reactivity with the constituent elements of the first raw material is formed at the bottom thereof, and the first raw material is arranged on the partition wall, The container is heated to a temperature sufficient to evaporate the mass of the second raw material having a reaction product with the constituent element of the first raw material on the surface to deposit a film of the second raw material on the inner surface of the container. Raw material lump heating means for heating the bottom of the container, a raw material film heating means for heating the side wall below the partition wall of the container to evaporate the film of the second raw material, and a side wall above the partition wall of the container. And a heating means for evaporating the first raw material. A characteristic evaporation source device for film formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16123994A JP3552749B2 (en) | 1994-07-13 | 1994-07-13 | Film forming apparatus and film forming evaporation source apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16123994A JP3552749B2 (en) | 1994-07-13 | 1994-07-13 | Film forming apparatus and film forming evaporation source apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0827565A true JPH0827565A (en) | 1996-01-30 |
| JP3552749B2 JP3552749B2 (en) | 2004-08-11 |
Family
ID=15731294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16123994A Expired - Fee Related JP3552749B2 (en) | 1994-07-13 | 1994-07-13 | Film forming apparatus and film forming evaporation source apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3552749B2 (en) |
-
1994
- 1994-07-13 JP JP16123994A patent/JP3552749B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3552749B2 (en) | 2004-08-11 |
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