JPH0832928B2 - Method for producing unidirectional electrical steel sheet with excellent magnetic properties and glass film properties - Google Patents
Method for producing unidirectional electrical steel sheet with excellent magnetic properties and glass film propertiesInfo
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- JPH0832928B2 JPH0832928B2 JP62275013A JP27501387A JPH0832928B2 JP H0832928 B2 JPH0832928 B2 JP H0832928B2 JP 62275013 A JP62275013 A JP 62275013A JP 27501387 A JP27501387 A JP 27501387A JP H0832928 B2 JPH0832928 B2 JP H0832928B2
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Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、一方向性電磁鋼板の製造プロセスの脱炭焼
鈍工程において得られる材料表面の酸化膜層の改質に関
するものであり、得に最終仕上焼鈍時の材料の二次再結
晶の安定化とグラス皮膜の特性の向上の双方を同時に満
たす一方向性電磁鋼板の製造方法に関するものである。TECHNICAL FIELD The present invention relates to modification of an oxide film layer on a material surface obtained in a decarburizing annealing step of a production process of a grain-oriented electrical steel sheet, and particularly The present invention relates to a method for producing a grain-oriented electrical steel sheet that simultaneously satisfies the stabilization of secondary recrystallization of the material during final finish annealing and the improvement of the properties of the glass film.
(従来の技術) 一方向性電磁鋼板は、圧延方向に(110)〔001〕方位
を持つ結晶粒(ゴス方位粒)により構成される、通常、
4.5重量%以下のSiを含有する、板厚が0.10〜0.35mmの
鋼板である。その表面は、絶縁性を確保する等の目的
で、通常、フォルステライトで覆われている。(Prior Art) A grain-oriented electrical steel sheet is usually composed of crystal grains (goss-oriented grains) having a (110) [001] orientation in the rolling direction.
It is a steel plate containing 4.5% by weight or less of Si and having a plate thickness of 0.10 to 0.35 mm. The surface is usually covered with forsterite for the purpose of ensuring insulation.
即ち、一方向性電磁鋼板は、極めて集積度の高い(11
0)〔001〕集合組織(ゴス組織)を持ったSi含有薄鋼板
と、表層部の0.1〜数μmの酸化物系セラミックスであ
るフォルステライトからなる複合材料である。That is, the grain-oriented electrical steel sheet has an extremely high degree of integration (11
0) A composite material composed of a Si-containing thin steel plate having a [001] texture (goss structure) and forsterite which is an oxide-based ceramic having a surface layer portion of 0.1 to several μm.
このような、ゴス組織の極めて高い集積度の達成と、
材料表層部の薄いフォルステライト絶縁皮膜の生成とい
う2つの異質の過程は、現在の一方向性電磁鋼板製造工
程においては、最終仕上焼鈍という一つの箱焼鈍工程中
において、ほぼ時期を同じくして行なわれる。前者の、
ゴス組織の集積度向上には、二次再結晶と呼ばれるゴム
方位粒のカタストロフィックな粒成長(異常粒成長)
が、工業的に利用されている。Achievement of such an extremely high degree of Goss organization,
In the current unidirectional electrical steel sheet manufacturing process, the two different processes of forming a thin forsterite insulating film on the surface layer of the material are performed almost at the same time during one box annealing process of final annealing. Be done. Of the former,
To improve the degree of Goss structure accumulation, catastrophic grain growth of rubber-oriented grains called secondary recrystallization (abnormal grain growth)
Is used industrially.
一方、後者の、材料表層部の薄いフォルステライト絶
縁皮膜の生成は、材料(鋼板)表面に予め形成された酸
化皮膜中のSiO2と、その上に塗布された焼鈍分離剤中の
固相反応によってなされる。On the other hand, in the latter case, the formation of a thin forsterite insulating film on the surface layer of the material is caused by the solid-phase reaction between SiO 2 in the oxide film previously formed on the surface of the material (steel plate) and the annealing separator applied on it. Done by
これら、二次再結晶とフォルステライトの生成という
本質的に全く異なる2つの現象は、脱炭焼鈍過程で材料
表面に形成される酸化膜の構造や厚さ等を決定する脱炭
焼鈍条件や焼鈍分離剤の影響を受け易い。また、これら
2つの現象は、実際には、材料(鋼板)内部と表層部界
面とで相互に干渉しあいながら反応が進行する結果であ
ると考えられる。These two completely different phenomena of secondary recrystallization and generation of forsterite are the decarburization annealing conditions and annealing that determine the structure and thickness of the oxide film formed on the material surface during the decarburization annealing process. It is easily affected by the separating agent. In addition, it is considered that these two phenomena are actually the result of the progress of the reaction while interfering with each other inside the material (steel plate) and the surface layer interface.
かかる観点から、これまで、脱炭焼鈍条件や焼鈍分離
剤について多くの研究がなされてきた。From this point of view, much research has been conducted on decarburization annealing conditions and annealing separators.
一方、生産性を向上させる目的で、最終仕上焼鈍工程
において取り扱うストリップコイルの単重は増大する傾
向にあり、このことに起因してストリップ長さ方向、幅
方向における温度或は雰囲気組成(露点等)のバラツ
キ、特に昇温時におけるバラツキは避けられない実情に
ある。このような、最終仕上焼鈍過程における材料(ス
トリップコイル)内部での温度、雰囲気条件の不均一性
を可及的に緩和するためにも、脱炭焼鈍過程で材料表面
に形成する酸化膜層や焼鈍分離剤は重要であり、この分
野の研究を進める動機となってきた。On the other hand, in order to improve productivity, the unit weight of the strip coil handled in the final finish annealing step tends to increase, which causes the temperature or atmosphere composition (dew point, etc.) in the strip length direction and width direction. ), Especially when the temperature rises, is inevitable. In order to reduce the unevenness of the temperature and atmosphere conditions inside the material (strip coil) in the final finishing annealing process as much as possible, an oxide film layer formed on the material surface in the decarburizing annealing process or Annealing agents are important and have motivated research in this area.
脱炭焼鈍過程で材料方面に形成する酸化膜層の効果
は、大きく分けて2つある。The effect of the oxide film layer formed in the material direction in the decarburization annealing process is roughly divided into two.
1つは、材料表面におけるグラス皮膜(フォルステラ
イト皮膜)の安定形成であり、もう1つは、二次再結晶
の安定化である。One is the stable formation of a glass film (forsterite film) on the material surface, and the other is the stabilization of secondary recrystallization.
前者の場合、材料表面の酸化層の厚さ、構成成分等が
重要であり、後者の場合、材質的にどのようなメカニズ
ムで二次再結晶を行わせるかということが重要である。
これらが、脱炭焼鈍条件選択の重要な基準となる。In the former case, the thickness of the oxide layer on the surface of the material, the constituents, etc. are important, and in the latter case, the mechanism by which secondary recrystallization is performed is important in terms of the material.
These are important criteria for selecting decarburization annealing conditions.
周知の如く、最終仕上焼鈍過程で材料の二次再結晶を
進行せしめるためには、インヒビターと呼ばれる微細析
出物の存在が必須である。通常、前記微細析出物の分散
相を、最終仕上焼鈍過程の高音域まで強化・維持するこ
とにより二次再結晶は安定するので、インヒビターが窒
化物を主体としている場合は、焼鈍雰囲気中の窒素
(N2)分圧を、硫化物を主体としている場合は、硫黄分
圧を適当に維持する。As is well known, in order to promote the secondary recrystallization of the material in the final finish annealing process, the presence of fine precipitates called inhibitors is essential. Usually, the secondary recrystallization is stabilized by strengthening and maintaining the dispersed phase of the fine precipitates in the high tone range of the final finishing annealing process.Therefore, when the inhibitor is mainly composed of nitride, nitrogen in the annealing atmosphere is used. If the main component of sulfide is (N 2 ) partial pressure, maintain the sulfur partial pressure appropriately.
最終仕上焼鈍過程における焼鈍雰囲気中の窒素(N2)
分圧を適当に維持することに関しては、たとえば、特公
昭46−937号公報に、含Al珪素鋼板を窒素雰囲気下で焼
鈍することの有用性が開示されており、この方法は、引
続きAl,Ti,Zr,V等を含有する珪素鋼板を種々の方法で窒
化することを提案した特公昭46−40855号公報に開示さ
れたプロセスに発展した。Nitrogen (N 2 ) in the annealing atmosphere in the final finish annealing process
With respect to maintaining the partial pressure appropriately, for example, Japanese Patent Publication No. 46-937 discloses the usefulness of annealing an Al-containing silicon steel sheet in a nitrogen atmosphere. The process has been developed to the process disclosed in Japanese Patent Publication No. 46-40855, which proposes nitriding a silicon steel sheet containing Ti, Zr, V, etc. by various methods.
また、特公昭49−6455号公報には、含Al珪素鋼板の表
層部を選択的に窒化することの有用性が指摘されてお
り、さらに、特公昭54−19850号公報には、適切な窒化
吸収を行わせるため、最終仕上焼鈍辞の雰囲気の露点
を、−20℃〜30℃の範囲にすることが提案されている。Further, JP-B-49-6455 has pointed out the usefulness of selectively nitriding the surface layer portion of an Al-containing silicon steel sheet, and JP-B-54-19850 discloses a suitable nitriding method. It has been proposed to set the dew point of the atmosphere of the final finish annealing in the range of -20 ° C to 30 ° C in order to cause absorption.
さらに、特公昭54−22408号公報には、最終仕上焼鈍
を水素20%以下の水素・窒素混合雰囲気下に行うことが
提案されている。Further, Japanese Examined Patent Publication No. 54-22408 proposes to carry out the final finish annealing in a hydrogen / nitrogen mixed atmosphere containing 20% or less of hydrogen.
一方、焼鈍分離剤中に金属窒化物を添加することによ
り、最終仕上焼鈍過程での材料(ストリップコイル)長
さ方向、幅方向での雰囲気のバラツキの影響を緩和する
方法が、特公昭54−14568号公報に開示されている。具
体的には、焼鈍分離剤中に窒化クロム、窒化チタン、窒
化バナジウムを添加することにより、最終仕上焼鈍過程
でのストリップコイルのストリップ幅方向における雰囲
気の窒素分圧を均一にし、二次再結晶の安定性を実現せ
んとするものである。On the other hand, by adding a metal nitride to the annealing separator, there is a method of mitigating the influence of atmosphere variation in the length direction and width direction of the material (strip coil) in the final finish annealing process. It is disclosed in Japanese Patent No. 14568. Specifically, by adding chromium nitride, titanium nitride, and vanadium nitride to the annealing separator, the nitrogen partial pressure of the atmosphere in the strip width direction of the strip coil in the final finishing annealing process is made uniform, and the secondary recrystallization is performed. It is intended to realize the stability of.
他方、最終仕上焼鈍過程での雰囲気中の硫黄分圧の確
保を目的としたものに、特開昭53−50008号公報に提案
されている方法がある。これは、Sbと、Sおよび/また
はSeを主体とする析出分散相をインヒビターとして用い
る成分系の珪素鋼の二次再結晶の安定化を図るために、
Fe2S等硫黄化合物を焼鈍分離剤中に添加したり、H2Sを
含有する雰囲気中で最終仕上焼鈍する方法である。On the other hand, there is a method proposed in Japanese Patent Laid-Open No. 53-50008 for the purpose of ensuring the partial pressure of sulfur in the atmosphere during the final finish annealing process. This is because in order to stabilize the secondary recrystallization of the silicon steel of the component system using Sb and the precipitated dispersed phase mainly composed of S and / or Se as an inhibitor,
In this method, a sulfur compound such as Fe 2 S is added to the annealing separator, or final finishing annealing is performed in an atmosphere containing H 2 S.
これらの先行技術にみられるように、珪素鋼の二次再
結晶は、最終仕上焼鈍過程での窒素分圧や硫黄分圧の確
保により安定する方向に向い、焼鈍分離剤中の添加物も
この目的のために加えられることが多い。As seen in these prior arts, the secondary recrystallization of silicon steel tends to be stabilized by securing a nitrogen partial pressure and a sulfur partial pressure in the final finishing annealing process, and the additive in the annealing separator is also Often added for the purpose.
上に述べたように、脱炭焼鈍過程で材料表面に形成さ
れる酸化膜の機能の1つであるグラス皮膜形成は、焼鈍
分離剤中のMgOと酸化膜中のSiO2との反応で生じるもの
であり、酸化膜の構成成分としてSiO2リッチであること
および一定以上の膜厚さが確保されていることが重要で
ある。As described above, glass film formation, which is one of the functions of the oxide film formed on the material surface during decarburization annealing, occurs due to the reaction between MgO in the annealing separator and SiO 2 in the oxide film. It is important that the constituent of the oxide film be rich in SiO 2 and that the film thickness be above a certain level.
脱炭焼鈍過程で材料表面に形成される酸化膜の第2の
機能である、最終仕上焼鈍過程での二次再結晶の安定化
については、従来の、鋼中インヒビターとしてMnS、MnS
e、AlN等を用いる場合は、最終仕上焼鈍の昇温過程での
雰囲気ガスとの反応によるインヒビターの変化を防止す
るためには、雰囲気ガスに対して安定な酸化膜、即ちシ
ール性のよい(バリヤーとして機能し得る)酸化膜であ
ることが要求されてきた。Regarding stabilization of secondary recrystallization in the final finish annealing process, which is the second function of the oxide film formed on the material surface in the decarburization annealing process, MnS, MnS as the conventional inhibitors in steel are used.
In the case of using e, AlN or the like, in order to prevent the change of the inhibitor due to the reaction with the atmospheric gas in the temperature rising process of the final annealing, an oxide film stable to the atmospheric gas, that is, a good sealing property ( It has been required to be an oxide film (which can function as a barrier).
この目的のために、たとえば、特公昭57−1575号公報
には、脱炭焼鈍過程前段領域における雰囲気の酸化度
(PH20/PH2)を0.15以上とし、引き続く後段領域におけ
る雰囲気の酸化度を0.75以下かつ前段領域におけるそれ
よりも小さくすることが開示されている。For this purpose, for example, in Japanese Patent Publication No. 57-1575, the degree of oxidation (P H20 / P H2 ) of the atmosphere in the former region of the decarburization annealing process is set to 0.15 or more, and the degree of oxidation of the atmosphere in the succeeding latter region is It is disclosed that the value is 0.75 or less and smaller than that in the former region.
処で、近年、スラブ過熱過程でインヒビターを完全に
溶体化することなく、比較的低い温度に加熱する一方向
性電磁鋼板の製造プロセスが試みられている。In recent years, attempts have been made to manufacture a grain-oriented electrical steel sheet in which the inhibitor is heated to a relatively low temperature without completely solutionizing the inhibitor during the slab heating process.
かかるプロセスにあっては、熱延板焼鈍過程以外の過
程でインヒビターを析出分散させることが必要となって
くる。そのような、インヒビター析出分散手段の1つに
最終仕上焼鈍における二次再結晶以前の段階で、たとえ
ば、鋼中のAlを窒化析出させる手段がある。In such a process, it becomes necessary to precipitate and disperse the inhibitor in a process other than the hot-rolled sheet annealing process. As one of such inhibitor precipitation dispersion means, there is a means for nitriding precipitation of Al in steel, for example, at a stage before secondary recrystallization in final finish annealing.
かかる手段を採るときは、脱炭焼鈍過程で材料表面に
形成する酸化膜の機能が一変する。即ち、脱炭焼鈍過程
で材料表面に形成する酸化膜は、上に述べた如き最終仕
上焼鈍での雰囲気ガスに対して安定な酸化膜であっては
ならない。When such means is adopted, the function of the oxide film formed on the material surface during the decarburization annealing process is completely changed. That is, the oxide film formed on the surface of the material during the decarburization annealing process should not be a stable oxide film against the atmospheric gas in the final finishing annealing as described above.
かかる条件を満たしかつ、グラス皮膜の特性の向上と
二次再結晶の安定化を図らねばならない。It is necessary to satisfy such conditions and to improve the characteristics of the glass film and stabilize the secondary recrystallization.
(発明が解決しようとする問題点) 本発明は、スラブ加熱温度を1280℃未満の低い水準と
する一方向性電磁鋼板製造プロセスを採るときに、最終
仕上焼鈍過程における材料の窒化反応の安定化による二
次再結晶の安定化とグラス皮膜の安定形成が図れる一方
向性電磁鋼板の製造方法を提供することを目的としてな
された。(Problems to be Solved by the Invention) The present invention stabilizes the nitriding reaction of the material in the final finishing annealing process when the unidirectional electrical steel sheet manufacturing process in which the slab heating temperature is set to a low level of less than 1280 ° C is adopted. The present invention was made for the purpose of providing a method for producing a grain-oriented electrical steel sheet capable of stabilizing secondary recrystallization and stably forming a glass film.
(問題点を解決するための手段) 本発明の要旨とする処は、重量%で、C:0.0010〜0.10
%、Si:2.5〜4.0%、酸可溶性Al:0.010〜0.06%、S≦
0.014%、残部:Feおよび不可避的不純物からなる一方向
性電磁鋼板用スラブを1280℃を超えない温度に加熱した
後、熱間圧延および熱延板焼鈍を施し、次いで1回また
は焼鈍を介挿する2回以上の冷間圧延を行って最終板厚
とした後、湿水素雰囲気中で脱炭焼鈍しさらに、焼鈍分
離剤を塗布した後最終仕上焼鈍する一方向性電磁鋼板の
製造方法において、脱炭焼鈍過程における均熱帯の前段
領域での材料滞在時間をa、後段領域での材料滞在時間
をbとするとき、b≦a/3とするとともに前記後段領域
における雰囲気の水素分圧に対する水蒸気分圧の比PH20
/PH2を0.02以下として脱炭焼鈍を行った後、焼鈍分離剤
を塗布し、次いで昇温過程1000℃までをN2を含むPH20/P
H2≦0.02の雰囲気中で最終仕上焼鈍することを特徴とす
る磁気特性およびグラス皮膜特性に優れた一方向性電磁
鋼板の製造方法にある。(Means for Solving Problems) The gist of the present invention is that, in% by weight, C: 0.0010 to 0.10.
%, Si: 2.5 to 4.0%, acid-soluble Al: 0.010 to 0.06%, S ≦
0.014%, balance: Fe and unavoidable impurities slabs for unidirectional electrical steel sheets are heated to a temperature not exceeding 1280 ° C, then hot-rolled and hot-rolled sheet annealed, then once or annealed. In the method for producing a unidirectional electrical steel sheet, after performing cold rolling twice or more to obtain a final plate thickness, decarburizing annealing in a wet hydrogen atmosphere, and further applying an annealing separating agent and finally finishing annealing, When the material staying time in the soaking zone in the decarburization annealing process is a and the material staying time in the latter stage area is b, b ≦ a / 3 and steam for the hydrogen partial pressure of the atmosphere in the latter stage area Partial pressure ratio P H20
/ P H2 is 0.02 or less, decarburization annealing is performed, then an annealing separator is applied, and then the temperature rising process up to 1000 ℃ contains N 2 P H20 / P
This is a method for producing a grain-oriented electrical steel sheet having excellent magnetic properties and glass film properties, which is characterized by performing final finish annealing in an atmosphere of H2 ≤ 0.02.
以下に、本発明を、詳細に説明する。 Hereinafter, the present invention will be described in detail.
本発明は、前述のように、脱炭焼鈍ならびに最終仕上
焼鈍における雰囲気の制御条件を組合せることにより、
最終仕上焼鈍過程での材料の窒化反応の安定化による二
次再結晶の安定化とグラス皮膜の安定形成を図ることを
目的としている。The present invention, as described above, by combining the control conditions of the atmosphere in the decarburization annealing and the final finishing annealing,
The purpose is to stabilize the secondary recrystallization and the stable formation of the glass film by stabilizing the nitriding reaction of the material in the final finishing annealing process.
先ず、本発明による脱炭焼鈍後の材料(ストリップ)
の表面酸化層介質の結果、二次最結晶が安定する点につ
いて説明する。First, the material (strip) after decarburization annealing according to the present invention
As a result of the intervening surface oxide layer, the point that the secondary maximum crystal is stable will be described.
本発明の発明者等は、出発材料として、重量%で、C:
0.055%、Si:3.30%、Mn:0.15%、酸化溶性Al:0.030
%、N:0.0070%、残部:実質的にFeからなるスラブを、
熱間圧延−熱延板焼鈍−酸洗−冷間圧延の工程で処理し
て0.30mmの最終板厚として、この材料を、脱炭焼鈍過程
後段領域の雰囲気のPH20/PH2を変えて脱炭焼鈍した。The inventors of the present invention, as a starting material, in% by weight, C:
0.055%, Si: 3.30%, Mn: 0.15%, Oxide soluble Al: 0.030
%, N: 0.0070%, balance: a slab consisting essentially of Fe,
This material was processed in the process of hot rolling-hot rolled sheet annealing-pickling-cold rolling to a final sheet thickness of 0.30 mm, and this material was changed by changing P H20 / P H2 in the atmosphere in the latter region of the decarburization annealing process. Decarburized and annealed.
こうして得られた材料の表面酸化層を、GDS分析およ
び擬似電極電位法を用いて電位差カーブの測定を行って
解析した。その結果、脱炭焼鈍過程の均熱時間内の後段
の特定領域を極端にドライな雰囲気で焼鈍することによ
り、材料表面に形成される酸化層の最表層にSi、Mnの強
い濃化層ができ、また最表層にはMxOy層に相当する酸化
物層が殆どないことが判った。この模様を、第1図に示
す。The surface oxide layer of the material thus obtained was analyzed by measuring the potential difference curve using GDS analysis and the pseudo electrode potential method. As a result, by annealing a specific region in the subsequent stage within the soaking time of the decarburization annealing process in an extremely dry atmosphere, a strong concentrated layer of Si and Mn is formed on the outermost surface of the oxide layer formed on the material surface. It was found that the outermost layer had almost no oxide layer corresponding to the M x O y layer. This pattern is shown in FIG.
また、電位差カーブの結果でも、脱炭焼鈍時の後段領
域のPH20/PH2≦0.02の場合には、酸化層の溶解性が非常
に速く、タイトなMxOy層の形成がなかった。この模様
を、第2図に示す。In addition, even in the result of the potential difference curve, when P H20 / P H2 ≦ 0.02 in the latter region during decarburization annealing, the solubility of the oxide layer was very fast, and there was no formation of a tight M x O y layer. . This pattern is shown in FIG.
この材料に焼鈍分離剤を塗布し、20℃/hrの昇温速度
で、N2主体のN2+H2混合ドライ雰囲気を用いて焼鈍し、
途中の窒化状況および最終仕上焼鈍完了後の製品の磁気
特性ならびに二次再結晶状況の調査を行った。The annealing separator was applied to this material, at a heating rate of 20 ° C. / hr, using a N 2 + H 2 mixed dry atmosphere N 2 mainly annealed,
The state of nitriding on the way, the magnetic properties of the product after the final finish annealing and the state of secondary recrystallization were investigated.
その結果、昇温過程900℃における鋼中のN量は、脱
炭焼鈍条件との間に強い相関があり、表1に示すよう
に、均熱領域の後段部分のPH20/PH2が低い場合、鋼中の
N量が安定して増加していることが判った。この模様を
第3図および表4に示す。As a result, the amount of N in the steel at the temperature rising process of 900 ° C has a strong correlation with the decarburization annealing condition, and as shown in Table 1, P H20 / P H2 in the latter part of the soaking region is low. In this case, it was found that the N content in the steel increased steadily. This pattern is shown in FIG. 3 and Table 4.
また、最終仕上焼鈍完了後の製品の磁気特性は、脱炭
焼鈍過程における均熱後段領域のPH20/PH2が低いほど良
く、最終仕上焼鈍での二次再結晶が安定しており、グラ
ス皮膜も極めて均一で優れていることが判った。Further, the magnetic properties of the product after the final finish annealing are better as the P H20 / P H2 in the post-heating soaking region in the decarburizing annealing process is lower, and the secondary recrystallization in the final finishing annealing is stable, The coating was found to be extremely uniform and excellent.
このように、脱炭焼鈍条件を制御することにより、製
品の磁気特性とグラス皮膜の両面で顕著な改善効果が得
られることが確認できた。この両面での改善効果は、脱
炭焼鈍条件の制御に加えて最終仕上焼鈍過程での材料の
窒化が必須となっている傾向が見られた。As described above, it was confirmed that by controlling the decarburization annealing conditions, a remarkable improvement effect can be obtained in both the magnetic properties of the product and the glass film. As for the improvement effect on both sides, it was observed that nitriding of the material in the final finish annealing process was essential in addition to the control of the decarburization annealing conditions.
次に、本発明の要件の限定理由を述べる。 Next, the reasons for limiting the requirements of the present invention will be described.
先ず、脱炭焼鈍における均熱領域の雰囲気条件につい
て述べる。First, the atmospheric conditions in the soaking region in decarburization annealing will be described.
均熱量域の前段における材料滞在時間aと後段におけ
材料滞在時間bの比を、b≦a/3としたのは、後段領域
における材料滞在時間がa/3より長いと、工業的な生産
を考えた場合、脱炭性と酸化皮膜形成を阻害することの
ほかに最終仕上焼鈍過程における材料の窒素の吸収量が
増大し過ぎて磁気特性の優れた製品を得難く、磁性、皮
膜ともやや劣化する傾向があるからである。The ratio of the material staying time a in the first stage of the soaking amount region to the material staying time b in the latter stage is set to b ≦ a / 3, because the material staying time in the latter stage region is longer than a / 3, industrial production In consideration of the above, in addition to inhibiting decarburization and oxide film formation, it is difficult to obtain products with excellent magnetic properties because the absorption amount of nitrogen in the material during the final finish annealing process increases too much, and the magnetic properties and film are rather This is because it tends to deteriorate.
後段領域でのPH20/PH2を0.02以下としたのは、これを
超えると、脱炭焼鈍での材料最表面相の介質反応が弱く
なり、最終仕上焼鈍過程における窒化反応を抑制するMx
Oy相の残留量が増すためである。特に、PH20/PH2=0.15
〜0.35といった値になると、本発明における鋼成分では
材料表面の酸化膜の緻密化が顕著になり、最終仕上焼鈍
昇温過程における材料の適切なNの吸収性が劣ることに
起因して二次再結晶が不安定となる。また、材料表層部
へのMn、Siの濃化現象が弱まり、最終仕上焼鈍昇温過程
における材料の適切な窒化促進効果が得られないからで
ある。The P H20 / P H2 in the latter stage region was set to 0.02 or less, because if it exceeds this, the intercalation reaction of the outermost surface phase of the material in decarburization annealing becomes weaker, and the nitriding reaction in the final finish annealing process is suppressed M x
Residual amounts of O y phase is to increase. Especially, PH20 / PH2 = 0.15
When the value is up to 0.35, the densification of the oxide film on the surface of the material becomes remarkable with the steel composition in the present invention, and the secondary absorption is caused by the inferior proper N absorption of the material in the final finishing annealing temperature rising process. Recrystallization becomes unstable. Further, the concentration phenomenon of Mn and Si to the surface layer of the material is weakened, and an appropriate nitriding promotion effect of the material in the final finish annealing temperature rising process cannot be obtained.
発明者等の研究結果によれば、材料表面の酸化膜のN
吸収性を考えた場合、b:a/4〜a/10、PH20/PH2≦0.01が
最も望ましい条件である。According to the research results of the inventors, N of the oxide film on the material surface is
Considering the absorbability, b: a / 4 to a / 10 and P H20 / P H2 ≦ 0.01 are the most desirable conditions.
最終仕上げ焼鈍過程における雰囲気条件は、本発明に
おける成分条件下では特に重要であり、特公昭54−1456
8号公報に開示されている技術におけるような窒化剤を
用いる時以外は、N2を含む焼鈍雰囲気であることが重要
である。The atmospheric conditions in the final finish annealing process are particularly important under the component conditions in the present invention.
It is important to have an annealing atmosphere containing N 2 except when using a nitriding agent as in the technique disclosed in Japanese Patent Laid-Open No. 8 (1999).
最終仕上げ焼鈍過程における雰囲気ガスとしては、N2
単独、N2+H2、N2+Ar、N2+H2+Ar等であればよい。The atmosphere gas in the final finish annealing process is N 2
It may be alone, N 2 + H 2 , N 2 + Ar, N 2 + H 2 + Ar, or the like.
本発明において、もう1つの重要な要件は、最終仕上
焼鈍の昇温過程における雰囲気のPH20/PH2であり、この
値が0.02以下であることが必要である。PH20/PH2が0.02
を超えると、脱炭焼鈍における雰囲気条件により改質さ
れた材料最表面層のSiO2以外のMxOy層のない表面酸化膜
が、昇温過程で追加酸化により変質してしまうからであ
る。In the present invention, another important requirement is P H20 / P H2 in the atmosphere during the temperature rising process of final finish annealing, and this value needs to be 0.02 or less. P H20 / P H2 is 0.02
If it exceeds, the surface oxide film having no M x O y layer other than SiO 2 , which is the outermost surface layer of the material modified by the atmospheric conditions in decarburization annealing, is deteriorated by additional oxidation in the temperature rising process. .
本発明における成分系においては、最終仕上焼鈍にお
ける雰囲気のPH20/PH2が高い場合に生じるFexOyMnxOy等
のMxOy層は、脱炭焼鈍時のPH20/PH2が高い場合に生じる
現象と同様に、悪影響をもたらす。In the component system in the present invention, M x O y layer such as Fe x O y Mn x O y which occurs when the PH H20 / P H2 of the atmosphere in the final annealing is high is P H20 / P during decarburization annealing. As with the high H2 phenomenon, it has adverse effects.
最終仕上焼鈍の昇温過程において、N2、N2+Arのよう
に、H2を含まないガスを使用する場合には、PH20/PH2≦
0.02に相当する低い露点のものであることが必要である
ことは論を俟たない。When a gas that does not contain H 2 , such as N 2 and N 2 + Ar, is used in the temperature rising process of final finish annealing, P H20 / P H2 ≤
It is arguable that it needs to have a low dew point equivalent to 0.02.
素材成分の限定理由についてのべる。本発明が2時再
結晶に必要な析出物として、(Si、Al)Nを使うことか
らSi、Alの含有が必須である。Siが2.5%未満では素材
の固有抵抗が低すぎ、トランス鉄心材料として必要な低
鉄損が得られないので2.5%以上とした。また、4.0%を
超えると冷延時の割れが著しくなるので4.0%以下とし
た。AlNは2次再結晶の安定化に必要なAlN若しくは(S
i、Al)Nを確保するため酸可溶性Alとして0.010%以上
が必要である。しかし0.06%を超えると熱延板のAlNが
不適切となり、2次再結晶が不安定になるので0.06%以
下とした。I will explain the reasons for limiting the ingredients. Since (Si, Al) N is used as the precipitate required for the 2 o'clock recrystallization in the present invention, the inclusion of Si and Al is essential. If Si is less than 2.5%, the specific resistance of the material is too low and the low iron loss required for the transformer core material cannot be obtained. Further, if it exceeds 4.0%, cracking during cold rolling becomes significant, so the content was made 4.0% or less. AlN is the AlN or (S
In order to secure i, Al) N, 0.010% or more is required as acid-soluble Al. However, if it exceeds 0.06%, the AlN of the hot-rolled sheet becomes unsuitable and the secondary recrystallization becomes unstable, so the content was made 0.06% or less.
Sを0.014%以下としたのは、Sが高いと線状細粒と
呼ばれる2次再結晶不良部が発生する傾向にあり、これ
を予防するためには窒化処理が十分であれば0.014%以
下であることが望ましい。Sがこの量を超えると、如何
に窒化処理により(Si、Al)Nを鋼中に作りインヒビタ
ーを強化しても2次再結晶不良部が発生する確率が高く
なり好ましくない。S is 0.014% or less because if S is high, secondary recrystallization defects called linear fine grains tend to occur. If nitriding treatment is sufficient to prevent this, 0.014% or less Is desirable. If S exceeds this amount, no matter how nitriding treatment is used to form (Si, Al) N in steel to strengthen the inhibitor, the probability of secondary recrystallization failure is increased, which is not preferable.
Cは0.0010%未満になると2次再結晶が不安定にな
り、かつ2次再結晶した場合でも低磁束密度しか得られ
ないので0.0010%以上とした。一方、Cが多くなり過ぎ
ると、脱炭焼鈍時間が長くなり経済的でないので0.10%
以下とした。When C is less than 0.0010%, the secondary recrystallization becomes unstable, and even when the secondary recrystallization is performed, only a low magnetic flux density can be obtained, so the content was made 0.0010% or more. On the other hand, if the amount of C is too much, the decarburization annealing time becomes long and it is not economical, so 0.10%
Below.
以下、実施例により本発明を更に詳細に説明する。 Hereinafter, the present invention will be described in more detail with reference to Examples.
(実施例) 実施例1 重量%で、C:0.048%、Si:3.30%、S:0.008%、N:0.0
075%、Mn:0.015%、残部:Feおよび不可避的不純物から
なる溶鋼を、連続鋳造−熱間圧延−熱延板焼鈍−酸洗−
冷間圧延して0.29mmの最終板厚とした。(Example) Example 1 C: 0.048%, Si: 3.30%, S: 0.008%, N: 0.0% by weight
Molten steel consisting of 075%, Mn: 0.015%, balance: Fe and unavoidable impurities, continuous casting-hot rolling-hot rolled sheet annealing-pickling-
Cold rolled to a final thickness of 0.29 mm.
次いで、脱炭焼鈍を、N225%+H275%の雰囲気用ガス
を用い、後段領域のPH20/PH2を種種変えた条件で行った
後、MgO:100重量部、TiO2:3重量部からなる焼弾分離剤
を塗布した後、最終仕上焼鈍を、昇温過程での雰囲気N2
25%+H275%、1200℃×20hrの高温保定時の雰囲気H210
0%ドライの条件で行った。尚、このとき、同一サンプ
ルを最終仕上焼鈍の昇温過程900℃で引き出して、雰囲
気から材料へのN吸収量を測定した。Then, decarburization annealing was performed under the condition that the atmosphere gas of N 2 25% + H 2 75% was used and the P H20 / P H2 in the latter region was changed, and then MgO: 100 parts by weight, TiO 2 : 3 After applying the burn-up separator consisting of parts by weight, the final finish annealing is performed in the atmosphere N 2 during the heating process.
25% + H 2 75%, the atmosphere H 2 10 hot holding time of the 1200 ° C. × 20 hr
It was performed under the condition of 0% dry. At this time, the same sample was pulled out at a temperature rising process of 900 ° C. in the final annealing to measure the N absorption amount from the atmosphere to the material.
最終仕上焼鈍の条件を、表1に脱炭焼鈍の昇温過程90
0℃での材料のN吸収量測定結果ならびに製品の磁気特
性および皮膜特性を、表2に示す。Table 1 shows the conditions for final finish annealing.
Table 2 shows the N absorption measurement results of the material at 0 ° C. and the magnetic properties and coating properties of the product.
表2から明らかな如く、比較例1では磁気特性は、比
較的良い結果が得られたけれども、皮膜特性は、不均一
でピンホール状の欠陥が数多く見られた。As is clear from Table 2, the magnetic properties of Comparative Example 1 were relatively good, but the film properties were non-uniform and many pinhole-like defects were observed.
これに対し、脱炭焼鈍過程後領域のPH20/PH2を低下さ
せたものは、皮膜が均一で良好であった。また、磁気特
性は、PH20/PH2≦0.008で著しい改善効果が見られた。On the other hand, in the case where P H20 / P H2 in the region after the decarburization annealing process was lowered, the film was uniform and good. In addition, the magnetic properties showed a significant improvement effect at P H20 / P H2 ≤0.008.
さらに、最終仕上焼鈍の昇温過程における鋼中N量
は、脱炭焼鈍過程後段領域のPH20/PH2≦0.008のとき210
〜250ppmと多く、PH20/PH2=0.19のときが最も少なく、
全領域均一なPH20/PH2:0.44のときは、170ppmであっ
た。Further, the N content in the steel during the temperature rising process of the final finish annealing is 210 when P H20 / P H2 ≦ 0.008 in the latter region of the decarburizing annealing process.
~250ppm many, the least when the P H20 / P H2 = 0.19,
It was 170 ppm when P H20 / P H2 : 0.44 was uniform over the entire area.
このように、製品の磁気特性と、最終仕上焼鈍の昇温
過程における鋼中N量の相関が強いことが明らかとなっ
た。As described above, it was revealed that there is a strong correlation between the magnetic properties of the product and the N content in the steel during the temperature rising process of final finish annealing.
実施例2 実施例1におけると同一の成分の出発材料を、同じプ
ロセスで処理して0.22mmの最終板厚とした後、脱炭焼鈍
を、表3に示す条件で、後段の時間配分を変えて行っ
た。こうして得られた材料に焼鈍分離剤を塗布した後、
実施例1におけると同様の最終仕上焼鈍を施した。最終
仕上焼鈍完了後の製品の磁気特性と皮膜特性を、表3に
示す。Example 2 After starting materials having the same components as in Example 1 were treated in the same process to give a final plate thickness of 0.22 mm, decarburization annealing was carried out under the conditions shown in Table 3 and the time distribution of the latter stage was changed. I went. After applying the annealing separator to the material thus obtained,
The same final finishing annealing as in Example 1 was performed. Table 3 shows the magnetic properties and coating properties of the product after the completion of the final finish annealing.
比較例1では、グラス皮膜が不均一でピンホール状の
欠陥が多量に発生し、密着性も不良であった。In Comparative Example 1, the glass film was non-uniform, a large number of pinhole-like defects were generated, and the adhesion was also poor.
これに対し、脱炭焼鈍後段領域のPH20/PH2を0.012と
低くし、処理時間を15〜50秒間としたものは、グラス皮
膜の均一化、密着性の向上とともに磁気特性が著しく改
善される傾向が見られた。On the other hand, when the P H20 / P H2 in the post-decarburization annealing region was set as low as 0.012 and the treatment time was set to 15 to 50 seconds, the magnetic properties were remarkably improved as well as the uniformity of the glass coating and the improvement of adhesion. There was a tendency to change.
(発明の効果) 本発明は、以上述べたように構成しかつ、作用せしめ
るようにしたから、スラブ加熱温度を1280℃未満と低い
水準にしてなお、最終仕上焼鈍過程における二次再結晶
を安定化し、最終製品の磁気特性、皮膜特性ともに優れ
たものとすることができるから、スラブ加熱のためのエ
ネルギを大幅に減少せしめ得、設備のメンテナンス、設
備稼働率、作業性の面で多大の効果を奏する。 (Effect of the invention) Since the present invention is configured and operated as described above, the slab heating temperature is set to a low level of less than 1280 ° C, and secondary recrystallization in the final finish annealing process is stabilized. The final product can be made excellent in both magnetic properties and coating properties, so the energy for heating the slab can be greatly reduced, resulting in a great effect in terms of equipment maintenance, equipment availability, and workability. Play.
第1図は、脱炭焼鈍過程の均熱時間内の後段の特定領域
を、極端にドライな雰囲気とすることによって、材料の
酸化層の最表層部にSi、Mnの強い濃化層が形成される模
様を示す図で(a)は比較例、(b)は本発明例を示
す。第2図は、脱炭焼鈍過程の均熱時間内の後段領域の
PH20/PH2≦0.02とした場合に、材料表層部の溶解性が良
く、タイトなMxOy層の形成がないことを示す電位差カー
ブ、第3図は、脱炭焼鈍過程の均熱時間内の後段領域の
PH20/PH2と最終仕上焼鈍昇温過程900℃におけるN吸収
量の関係を示す図である。Fig. 1 shows the formation of a strong Si and Mn concentrated layer at the outermost surface of the oxide layer of the material by setting the extremely dry atmosphere in the specific region in the latter part of the soaking time during the decarburization annealing process. In the figure showing the pattern to be formed, (a) shows a comparative example and (b) shows an example of the present invention. Fig. 2 shows the post-stage region within the soaking time during the decarburization annealing process.
When P H20 / P H2 ≦ 0.02, the potential difference curve showing that the material surface layer has good solubility and there is no formation of a tight M x O y layer. Figure 3 shows soaking during the decarburization annealing process. In the latter part of the time
It is a figure which shows the relationship between P H20 / P H2 and the amount of N absorption in the final finishing annealing temperature rising process 900 ° C.
Claims (1)
0%、酸可溶性Al:0.010〜0.06%、S≦0.014%、残部:F
eおよび不可避的不純物からなる一方向性電磁鋼板用ス
ラブを1280℃を超えない温度に加熱した後、熱間圧延お
よび熱延板焼鈍を施し、次いで1回または焼鈍を介挿す
る2回以上の冷間圧延を行って最終板厚とした後、湿水
素雰囲気中で脱炭焼鈍しさらに、焼鈍分離剤を塗布した
後最終仕上焼鈍する一方向性電磁鋼板の製造方法におい
て、脱炭焼鈍過程における均熱帯の前段領域での材料滞
在時間をa、後段領域での材料滞在時間をbとすると
き、b≦a/3とするとともに前記後段領域における雰囲
気の水素分圧に対する水蒸気分圧の比PH20/PH2を0.02以
下として脱炭焼鈍を行った後、焼鈍分離剤を塗布し、次
いで昇温過程1000℃までをN2を含むPH20/PH2≦0.02の雰
囲気中で最終仕上焼鈍することを特徴とする磁気特性お
よびグラス皮膜特性に優れた一方向性電磁鋼板の製造方
法。1. By weight%, C: 0.0010 to 0.10%, Si: 2.5 to 4.
0%, acid-soluble Al: 0.010 to 0.06%, S ≦ 0.014%, balance: F
After heating the slab for unidirectional electrical steel sheet consisting of e and unavoidable impurities to a temperature not exceeding 1280 ° C, hot rolling and hot rolled sheet annealing are performed, and then once or twice or more by annealing. After performing cold rolling to the final plate thickness, decarburizing and annealing in a wet hydrogen atmosphere, and further applying an annealing separating agent and finally finishing annealing, in the method for producing a unidirectional electrical steel sheet, in the decarburizing and annealing process. When the material staying time in the former stage region of the soaking zone is a and the material staying time in the latter stage region is b, b ≦ a / 3 and the ratio P of the steam partial pressure to the hydrogen partial pressure of the atmosphere in the latter stage region is set. After decarburization annealing with H20 / P H2 of 0.02 or less, an annealing separator is applied, and then a final temperature annealing process up to 1000 ° C. is finally finished in an atmosphere of N 2 containing P H20 / P H2 ≦ 0.02. It has excellent magnetic properties and glass film properties. Method for manufacturing grain-oriented electrical steel sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62275013A JPH0832928B2 (en) | 1987-10-30 | 1987-10-30 | Method for producing unidirectional electrical steel sheet with excellent magnetic properties and glass film properties |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62275013A JPH0832928B2 (en) | 1987-10-30 | 1987-10-30 | Method for producing unidirectional electrical steel sheet with excellent magnetic properties and glass film properties |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01119621A JPH01119621A (en) | 1989-05-11 |
| JPH0832928B2 true JPH0832928B2 (en) | 1996-03-29 |
Family
ID=17549664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62275013A Expired - Lifetime JPH0832928B2 (en) | 1987-10-30 | 1987-10-30 | Method for producing unidirectional electrical steel sheet with excellent magnetic properties and glass film properties |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0832928B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0730397B2 (en) * | 1990-04-13 | 1995-04-05 | 新日本製鐵株式会社 | Method for producing unidirectional electrical steel sheet with excellent magnetic properties |
| US5904647A (en) * | 1996-10-08 | 1999-05-18 | Asahi Kogyo Kabushiki Kaisha | Treatment accessories for an endoscope |
| JP3415379B2 (en) * | 1996-11-21 | 2003-06-09 | Jfeスチール株式会社 | Insulating coating on grain-oriented silicon steel sheet and method of forming the same |
| KR20010086846A (en) * | 2000-03-03 | 2001-09-15 | 허남회 | Production method of Si-steel strip having single-preferred orientation and properties of low core loss and high magnetic induction |
| JP6519006B2 (en) * | 2015-04-02 | 2019-05-29 | 日本製鉄株式会社 | Unidirectional electrical steel sheet, decarburizing plate for unidirectional electrical steel sheet, and method for producing them |
-
1987
- 1987-10-30 JP JP62275013A patent/JPH0832928B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01119621A (en) | 1989-05-11 |
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