JPH08507575A - 炭化ケイ素層の製造方法とその物品 - Google Patents
炭化ケイ素層の製造方法とその物品Info
- Publication number
- JPH08507575A JPH08507575A JP7506895A JP50689595A JPH08507575A JP H08507575 A JPH08507575 A JP H08507575A JP 7506895 A JP7506895 A JP 7506895A JP 50689595 A JP50689595 A JP 50689595A JP H08507575 A JPH08507575 A JP H08507575A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- hydrogen
- methyltrichlorosilane
- reactor
- gas phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
- Laminated Bodies (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.原料成分である高純度化したメチルトリクロロシランと水素の気相混合物 を反応器に供給し、加熱した基材の上で分解させて分解生成物を生成する、気相 からの堆積によって炭化ケイ素層を生成する方法であって、次の過程を含んでな る方法: ・メチルトリクロロシランと水素のモル比が1:1〜3の気相混合物を3〜4 g/cm2・hの密度で1200〜1250℃の温度に加熱した基材に供給し、 ・基材を取り出し、 ・気相混合物としての分解生成物を反応器から抜き出し、0〜−120℃の温 度での凝縮によって気相と液相に分離し、 ・液相を重力によって精留に導き、 ・メチルトリクロロシランと他のオルガノクロロシランを分離して反応器にリ サイクルし、 ・塩化水素、メタン、水素を含む気相を−185〜−196℃に冷し、固体の 堆積物として塩化水素とメタンを分離し、 ・水素を圧縮して反応器にリサイクルする。 2.液体のメチルトリクロロシラン、他のオルガノクロロシラン、及びクロロ シランを含む液体相の凝縮を0〜−75℃の温度、及び−75〜−120℃の温 度で段階的に行う請求の範囲第1項に記載の方法。 3.基材が、堆積の前に弾性物質の層で被覆し、その上に100〜500μm の厚さの第1炭化ケイ素層を堆積させた炭化ケイ素と繊維を含む硬質なカーカス を形成したマンドレルであり、次いでマンドレルを除去し、炭化ケイ素堆積プロ セスを繰り返して所望の厚さの層を形成する請求の範囲第1又は2項に記載の方 法。 4.マンドレルが請求の範囲第〜3項に記載のいずれか1項の方法によって得 られた炭化ケイ素を含むマンドレルである請求の範囲第1又は2項に記載の方法 。 5.弾性の炭素質物質と100〜500μmの厚さを有する炭化ケイ素の少な くとも1方の層と、カーカスの上に所望の厚さの第2の炭化ケイ素層を順次に含 む物品であり、請求の範囲第1〜4項に記載のいずれか1項の方法によって得ら れた炭化ケイ素層の堆積により形成された物品。
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU93041348A RU2087416C1 (ru) | 1993-08-17 | 1993-08-17 | Способ получения слоев карбида кремния |
| RU93041348 | 1993-08-17 | ||
| RU93041257/26A RU93041257A (ru) | 1993-08-17 | Способ получения изделий из карбида кремния | |
| RU93041257 | 1993-08-17 | ||
| PCT/RU1994/000201 WO1995005495A1 (en) | 1993-08-17 | 1994-08-15 | Method of producing layers of silicon carbide and an associated product |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08507575A true JPH08507575A (ja) | 1996-08-13 |
Family
ID=26653756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7506895A Ceased JPH08507575A (ja) | 1993-08-17 | 1994-08-15 | 炭化ケイ素層の製造方法とその物品 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5698261A (ja) |
| EP (1) | EP0665305A4 (ja) |
| JP (1) | JPH08507575A (ja) |
| AU (1) | AU7667994A (ja) |
| WO (1) | WO1995005495A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129561A (ja) * | 1995-11-06 | 1997-05-16 | Teisan Kk | ガス回収装置 |
| US6332925B1 (en) * | 1996-05-23 | 2001-12-25 | Ebara Corporation | Evacuation system |
| US5952046A (en) * | 1998-01-21 | 1999-09-14 | Advanced Technology Materials, Inc. | Method for liquid delivery chemical vapor deposition of carbide films on substrates |
| US7261919B2 (en) * | 2003-11-18 | 2007-08-28 | Flx Micro, Inc. | Silicon carbide and other films and method of deposition |
| US9546420B1 (en) * | 2012-10-08 | 2017-01-17 | Sandia Corporation | Methods of depositing an alpha-silicon-carbide-containing film at low temperature |
| US10683572B2 (en) * | 2018-10-15 | 2020-06-16 | Goodrich Corporation | Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites |
| TW202237532A (zh) * | 2020-12-11 | 2022-10-01 | 法商扎迪恩特科技簡易股份有限公司 | 用於製造SiC固體材料之方法及裝置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU327779A1 (ru) * | 1959-11-06 | 1973-03-20 | Способ получени кристаллов карбида кремни | |
| US3091517A (en) * | 1959-11-25 | 1963-05-28 | Texas Instruments Inc | Method for recovery and recycling hydrogen and silicon halides from silicon deposition reactor exhaust |
| US3293950A (en) * | 1965-01-15 | 1966-12-27 | Dow Corning | Wire drawing die |
| GB1257519A (ja) * | 1968-12-05 | 1971-12-22 | ||
| US4131697A (en) * | 1973-06-15 | 1978-12-26 | Association Pour La Recherches Et Le Developpement Des Methodes Et Processus Industriels | Method of coating carbon filaments with silicon carbide |
| DE3207065C2 (de) * | 1982-02-26 | 1985-08-22 | Gosudarstvennyj naučno-issledovatel'skij i proektnyj institut redkometalličeskoj promyšlennosti GIREDMET, Moskva | Verfahren zur Regenerierung von nichtumgesetzten Chlorsilanen und nichtumgesetztem Wasserstoff bei der Herstellung von polykristallinem Halbleitersilizium |
| US4491604A (en) * | 1982-12-27 | 1985-01-01 | Lesk Israel A | Silicon deposition process |
| US5154862A (en) * | 1986-03-07 | 1992-10-13 | Thermo Electron Corporation | Method of forming composite articles from CVD gas streams and solid particles of fibers |
| US5118485A (en) * | 1988-03-25 | 1992-06-02 | Hemlock Semiconductor Corporation | Recovery of lower-boiling silanes in a cvd process |
| US4980202A (en) * | 1989-07-03 | 1990-12-25 | United Technologies Corporation | CVD SiC matrix composites containing carbon coated fibers |
| US4997678A (en) * | 1989-10-23 | 1991-03-05 | Cvd Incorporated | Chemical vapor deposition process to replicate the finish and figure of preshaped structures |
| JPH0813713B2 (ja) * | 1990-10-11 | 1996-02-14 | 東芝セラミックス株式会社 | SiC被覆C/C複合材 |
-
1994
- 1994-08-15 AU AU76679/94A patent/AU7667994A/en not_active Abandoned
- 1994-08-15 WO PCT/RU1994/000201 patent/WO1995005495A1/ru not_active Ceased
- 1994-08-15 EP EP19940927128 patent/EP0665305A4/en not_active Ceased
- 1994-08-15 US US08/416,821 patent/US5698261A/en not_active Expired - Fee Related
- 1994-08-15 JP JP7506895A patent/JPH08507575A/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO1995005495A1 (en) | 1995-02-23 |
| AU7667994A (en) | 1995-03-14 |
| EP0665305A1 (en) | 1995-08-02 |
| EP0665305A4 (en) | 1996-01-10 |
| US5698261A (en) | 1997-12-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20050111 |
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| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20050411 |
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| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20050530 |
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| A313 | Final decision of rejection without a dissenting response from the applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A313 Effective date: 20050822 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20051004 |