JPH08510596A - 二次電子の偏向ユニットを有する粒子光学機器 - Google Patents
二次電子の偏向ユニットを有する粒子光学機器Info
- Publication number
- JPH08510596A JPH08510596A JP7524512A JP52451295A JPH08510596A JP H08510596 A JPH08510596 A JP H08510596A JP 7524512 A JP7524512 A JP 7524512A JP 52451295 A JP52451295 A JP 52451295A JP H08510596 A JPH08510596 A JP H08510596A
- Authority
- JP
- Japan
- Prior art keywords
- particle
- dipole
- optical
- optical axis
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title claims description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 35
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 230000005684 electric field Effects 0.000 claims description 14
- 238000007654 immersion Methods 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 description 11
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/151—Electrostatic means
- H01J2237/1516—Multipoles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims (6)
- 【請求項1】機器の光軸(4)に沿って生じる荷電粒子のビーム(34)を発生 する粒子源を有し、当該粒子源は当該粒子ビーム(34)により試験される試料 (14)を操作するために配置されたものであり、さらに、前記試料が配置され た領域の範囲にビーム焦点を焦点合わせする焦点合わせレンズ(6)と、前記試 料から発生する荷電粒子(32)を検出する検出素子(24、26)とを有し、 当該検出素子(24,26)は、電界が光軸と交差しかつ、交差した形で延在し 、そして当該電界の合成領域が前記光軸上に存在する電気双極子(24)を有す る粒子光学機器において、 前記検出素子(24,26)は、第1の双極子に対応する光軸の方向にずらさ れかつ、当該光軸の領域における電界が当該第1の双極子の電界と反対で、さら に前記検出素子の全ての双極子の前記光軸に沿って合成領域の代数和が実質的に ゼロであるような強度を持つ、少なくとも一つの更なる電気双極子(3)を有す ることを特徴とする粒子光学機器。
- 【請求項2】請求項1に記載の粒子光学機器において、 前記検出素子(24)が、相互に対応して前記光軸の方向にずらされた三つの 電気双極子(36,38,40,42)を有し、 中央双極子(38,40)の電界が、前記対向方向に整合され、 前記光軸に沿った前記中央双極子(38,40)の合成領域が、他の二つの双 極子(36,42)の各々の合成領域の二倍の大きさであることを特徴とする粒 子光学機器。
- 【請求項3】請求項1または2に記載の粒子光学機器において、 少なくとも一つの双極子に、光軸を中心として略々120度の角度で納められた 電極(44,46)が設けられたことを特徴とする粒子光学機器。
- 【請求項4】請求項1乃至3の何れか一項に記載の粒子光学機器において、 前記検出器の全ての電極が、周囲から電気的に絶縁されることを特徴とする粒 子光学機器。
- 【請求項5】請求項1乃至4の何れか一項に記載の粒子光学機器において、 少なくとも一つの前記双極子の前記電極の一つが、荷電粒子を伝達することを 特徴とする粒子光学機器。
- 【請求項6】請求項1乃至5の何れか一項に記載の粒子光学機器において、 前記検出素子の前記双極子が、界浸レンズ(8)の穴に設けられることを特徴 とする粒子光学機器。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP94200713 | 1994-03-18 | ||
| EP94200713.9 | 1994-03-18 | ||
| PCT/IB1995/000142 WO1995026041A1 (en) | 1994-03-18 | 1995-03-07 | Particle-optical instrument comprising a deflection unit for secondary electrons |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08510596A true JPH08510596A (ja) | 1996-11-05 |
Family
ID=8216718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7524512A Pending JPH08510596A (ja) | 1994-03-18 | 1995-03-07 | 二次電子の偏向ユニットを有する粒子光学機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5510617A (ja) |
| EP (1) | EP0699341B1 (ja) |
| JP (1) | JPH08510596A (ja) |
| DE (1) | DE69501533T2 (ja) |
| WO (1) | WO1995026041A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6717144B2 (en) | 2001-12-04 | 2004-04-06 | Kabushiki Kaisha Topcon | Scanning electron microscope system |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0917177A1 (de) * | 1997-11-17 | 1999-05-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Korpuskularstrahlgerät |
| JP4176159B2 (ja) * | 1997-12-08 | 2008-11-05 | エフ イー アイ カンパニ | 改善された2次電子検出のための磁界を用いた環境制御型sem |
| JP4084427B2 (ja) * | 1997-12-08 | 2008-04-30 | エフ イー アイ カンパニ | 改善された2次電子検出のための多極界を用いた環境制御型sem |
| DE69920182T2 (de) * | 1998-12-17 | 2005-02-17 | Fei Co., Hillsboro | Korpuskularstrahloptisches gerät mit auger-elektronendetektion |
| EP1049131B1 (en) * | 1999-03-31 | 2008-08-13 | Advantest Corporation | Particle beam apparatus for tilted observation of a specimen |
| CN1302515C (zh) | 2001-11-02 | 2007-02-28 | 株式会社荏原制作所 | 具有内置检测装置的半导体制造装置和使用该制造装置的器件制造方法 |
| DE10301579A1 (de) * | 2003-01-16 | 2004-07-29 | Leo Elektronenmikroskopie Gmbh | Elektronenstrahlgerät und Detektoranordnung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR850001390B1 (ko) * | 1980-07-31 | 1985-09-24 | 니혼 덴시 가부시끼 가이샤 | 2차 전자 검출장치 |
| JPS59184440A (ja) * | 1983-04-04 | 1984-10-19 | Hitachi Ltd | 走査電子顕微鏡 |
| DE3532781A1 (de) * | 1985-09-13 | 1987-03-19 | Siemens Ag | Anordnung zur detektion von sekundaer- und/oder rueckstreuelektronen in einem elektronenstrahlgeraet |
| GB8604181D0 (en) * | 1986-02-20 | 1986-03-26 | Texas Instruments Ltd | Electron beam apparatus |
| US5192867A (en) * | 1989-01-13 | 1993-03-09 | Hitachi, Ltd. | Electron optical measurement apparatus |
| US5360764A (en) * | 1993-02-16 | 1994-11-01 | The United States Of America, As Represented By The Secretary Of Commerce | Method of fabricating laser controlled nanolithography |
-
1995
- 1995-03-07 DE DE69501533T patent/DE69501533T2/de not_active Expired - Lifetime
- 1995-03-07 JP JP7524512A patent/JPH08510596A/ja active Pending
- 1995-03-07 EP EP95909084A patent/EP0699341B1/en not_active Expired - Lifetime
- 1995-03-07 WO PCT/IB1995/000142 patent/WO1995026041A1/en not_active Ceased
- 1995-03-15 US US08/404,706 patent/US5510617A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6717144B2 (en) | 2001-12-04 | 2004-04-06 | Kabushiki Kaisha Topcon | Scanning electron microscope system |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69501533D1 (de) | 1998-03-05 |
| EP0699341B1 (en) | 1998-01-28 |
| EP0699341A1 (en) | 1996-03-06 |
| WO1995026041A1 (en) | 1995-09-28 |
| US5510617A (en) | 1996-04-23 |
| DE69501533T2 (de) | 1998-07-30 |
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| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
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| A912 | Re-examination (zenchi) completed and case transferred to appeal board |
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