JPH0865076A - Piezoelectric device - Google Patents
Piezoelectric deviceInfo
- Publication number
- JPH0865076A JPH0865076A JP6198403A JP19840394A JPH0865076A JP H0865076 A JPH0865076 A JP H0865076A JP 6198403 A JP6198403 A JP 6198403A JP 19840394 A JP19840394 A JP 19840394A JP H0865076 A JPH0865076 A JP H0865076A
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- Prior art keywords
- zinc oxide
- thickness
- film
- piezoelectric film
- different
- Prior art date
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、酸化亜鉛圧電膜からな
る圧電装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric device including a zinc oxide piezoelectric film.
【０００２】[0002]
【従来の技術】配向性酸化亜鉛膜を絶縁処理して得られ
る酸化亜鉛圧電膜は、フィルター、発振子等の圧電装置
として用いられている。2. Description of the Related Art A zinc oxide piezoelectric film obtained by insulating a oriented zinc oxide film is used as a piezoelectric device such as a filter or an oscillator.
【０００３】そして、この配向性酸化亜鉛膜の製造方法
としては、スパッタリング法やＣＶＤ法等がある。As a method for producing this oriented zinc oxide film, there are a sputtering method, a CVD method and the like.
【０００４】例えば、酸化亜鉛圧電膜にビスマスおよび
マンガンを含有させることにより、高周波スパッタリン
グ法等によって、被着面に対しｃ軸が垂直で、良質な圧
電膜が得られることが、特公昭５７−２１９５号公報に
開示されている。For example, by adding bismuth and manganese to a zinc oxide piezoelectric film, a high-quality piezoelectric film having a c-axis perpendicular to the adherend surface can be obtained by a high frequency sputtering method or the like. 2195.
【０００５】また、ＣＶＤ法の一種で、特に大きい成膜
速度を有する輸送法による成膜によっても、良好な配向
性酸化亜鉛膜が得られる。Further, a good oriented zinc oxide film can be obtained by a film formation by a transport method which is one of the CVD methods and has a particularly high film formation rate.
【０００６】以下、輸送法による配向性酸化亜鉛の成膜
を例として、広がりや厚み縦の振動モードを利用した発
振子、フィルター等の圧電装置の製造方法を説明する。Hereinafter, a method of manufacturing a piezoelectric device such as an oscillator or a filter using a vibration mode of a spread or thickness direction will be described by taking a film formation of oriented zinc oxide by a transportation method as an example.
【０００７】輸送法は、酸化亜鉛（ＺｎＯ）と亜鉛（Ｚ
ｎ）とで、還元雰囲気中では高温でＺｎが安定で、ある
温度を境に低温でＺｎＯが安定であるという性質を利用
した成膜方法である。The transport method is based on zinc oxide (ZnO) and zinc (Z
n) is a film forming method utilizing the property that Zn is stable at high temperature in a reducing atmosphere and ZnO is stable at low temperature at a certain temperature.
【０００８】すなわち、還元ガス上流の高温域に配置さ
れたＺｎＯがガスにより還元されてＺｎ蒸気となり、下
流、低温側で酸化され配向性のＺｎＯが基板上に析出す
る。この場合、還元ガスとしてはＨ2 ／Ｎ2 混合ガス
が、また、基板としては、一般に、ＺｎＯ焼結体、Ｍｇ
Ｏ単結晶、ＭｇＯ上にスパッタリング法でＺｎＯ配向膜
を形成したもの等が用いられる。このようにして輸送法
により得られた配向性酸化亜鉛膜はｃ軸に配向し、その
向きは揃っている。That is, ZnO arranged in the high temperature region upstream of the reducing gas is reduced by the gas to become Zn vapor, which is oxidized downstream and at the low temperature side, and oriented ZnO is deposited on the substrate. In this case, a H 2 / N 2 mixed gas is used as the reducing gas, and a ZnO sintered body, Mg are generally used as the substrate.
For example, an O single crystal, a MgO on which a ZnO alignment film is formed by a sputtering method, or the like is used. The oriented zinc oxide film thus obtained by the transport method is oriented along the c-axis and the orientations thereof are uniform.
【０００９】次に、得られた酸化亜鉛膜は、研磨やスラ
イシングによって基板から除去され、拡散元素種の化合
物を含むペーストを塗布された後、８００℃程度の温度
で拡散させる熱拡散法によって絶縁化処理され、圧電性
を付与される。なお、一般に、拡散元素種としてはアク
セプターとして働くＬｉが使用される。その後、圧電性
を付与された酸化亜鉛膜は、望みの共振周波数を得るた
めに所定の寸法にスライシング、研磨される。Next, the obtained zinc oxide film is removed from the substrate by polishing or slicing, a paste containing a compound of a diffusing element species is applied, and then the film is insulated by a thermal diffusion method of diffusing at a temperature of about 800 ° C. It is subjected to chemical treatment and imparted with piezoelectricity. In general, Li that acts as an acceptor is used as the diffusion element species. After that, the piezoelectrically imparted zinc oxide film is sliced and polished to a predetermined size in order to obtain a desired resonance frequency.
【００１０】このようにして得られた酸化亜鉛圧電膜
は、電極を形成されて、広がりや厚み縦の振動モードを
利用した発振子、フィルター等の圧電装置として用いら
れる。The zinc oxide piezoelectric film thus obtained has electrodes formed thereon and is used as a piezoelectric device such as an oscillator or a filter utilizing a vibration mode of spreading and thickness.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、上記の
ような配向軸の向きがすべて同じ方向を向いた酸化亜鉛
圧電膜を用いると、例えば、厚み振動モードを利用して
１０ＭＨｚの共振周波数を得ようとした場合、この酸化
亜鉛圧電膜の厚みを約２５０μｍにする必要がある。さ
らに高周波の５０ＭＨｚの共振周波数を得ようとした場
合、その厚みを５０μｍにする必要があるが、これでは
酸化亜鉛圧電膜の機械的強度が弱くなり過ぎて、圧電装
置として用いることができなかった。However, if a zinc oxide piezoelectric film in which the orientation axes are all oriented in the same direction as described above, for example, a resonance frequency of 10 MHz can be obtained by utilizing the thickness vibration mode. In this case, the thickness of this zinc oxide piezoelectric film needs to be about 250 μm. Further, in order to obtain a high-frequency resonance frequency of 50 MHz, it is necessary to set the thickness to 50 μm, but with this, the mechanical strength of the zinc oxide piezoelectric film becomes too weak and it cannot be used as a piezoelectric device. .
【００１２】そこで、本発明の目的は、酸化亜鉛圧電膜
からなるものであって、その厚みを薄くして機械的強度
を低下させることなく、厚み振動モードによってより高
い共振周波数を得ることができる圧電装置を提供するこ
とにある。Therefore, an object of the present invention is to form a zinc oxide piezoelectric film, and it is possible to obtain a higher resonance frequency by the thickness vibration mode without reducing the mechanical strength by reducing the thickness. It is to provide a piezoelectric device.
【００１３】[0013]
【課題を解決するための手段】上記目的を達成するた
め、本発明の圧電装置は、酸化亜鉛圧電膜からなり、前
記酸化亜鉛圧電膜はほぼ同じ厚みを有する２つの領域が
厚み方向に隣接し、かつ、互いの領域の配向軸の向きが
異なっていることを特徴とする。In order to achieve the above object, the piezoelectric device of the present invention comprises a zinc oxide piezoelectric film, and the zinc oxide piezoelectric film has two regions having substantially the same thickness adjacent to each other in the thickness direction. In addition, the orientation axes of the regions are different from each other.
【００１４】そして、互いの領域の配向軸の向きが、ほ
ぼ１８０度異なっていることが好ましい。It is preferable that the orientation axes of the regions are different from each other by approximately 180 degrees.
【００１５】[0015]
【作用】本発明の圧電装置は、酸化亜鉛圧電膜からなる
ものであって、その厚み方向に、ほぼ同じ厚みであって
配向軸の向きが異なる２つの領域が層状に存在するもの
である。The piezoelectric device of the present invention is composed of a zinc oxide piezoelectric film, and has two layers in the thickness direction, which have almost the same thickness but different orientation axes.
【００１６】この酸化亜鉛圧電膜を用いた場合、従来の
配向軸の向きが揃った同じ厚みの酸化亜鉛圧電膜と比較
して、より高い周波数位置に厚み振動の共振モードが励
振される。そして、互いの領域の配向軸の向きがほぼ１
８０度異なっている場合には、従来の配向軸の向きが揃
った同じ厚みのものと比較して、２倍の周波数位置に厚
み振動の共振モードが励振される。When this zinc oxide piezoelectric film is used, the resonance mode of thickness vibration is excited at a higher frequency position as compared with the conventional zinc oxide piezoelectric film having the same thickness in which the orientation axes are aligned. The orientation axes of the regions are almost 1
When they are different by 80 degrees, the resonance mode of the thickness vibration is excited at a frequency position twice that of the conventional one having the same thickness in which the orientation axes are aligned.
【００１７】[0017]
【実施例】以下、本発明の圧電装置の実施例を説明す
る。まず、加圧成形したＺｎＯ粉体を１１００〜１３０
０℃の温度領域内に、アルミナ基板を６００〜９００℃
の温度領域内に保持し、高温側から１５０リットル／分
の３％Ｈ2 ／Ｎ2 混合ガスを流して、輸送法による気相
反応を５時間行い、アルミナ基板上に垂直にｃ軸配向し
た厚み約１ｍｍの酸化亜鉛膜を成膜した。その後、アル
ミナ基板を研磨して除去するとともに、得られた酸化亜
鉛膜をｃ軸配向軸に垂直に厚み０．５ｍｍの板状に研磨
した。EXAMPLES Examples of the piezoelectric device of the present invention will be described below. First, the pressure-molded ZnO powder is filled with 1100 to 130
Alumina substrate is 600-900 ° C within the temperature range of 0 ° C.
Held in the temperature range of 3%, and a 3% H 2 / N 2 mixed gas of 150 liter / min was flown from the high temperature side to carry out a gas phase reaction by a transport method for 5 hours to vertically orient the c-axis on the alumina substrate. A zinc oxide film having a thickness of about 1 mm was formed. After that, the alumina substrate was removed by polishing, and the obtained zinc oxide film was polished into a plate shape having a thickness of 0.5 mm perpendicular to the c-axis orientation axis.
【００１８】次に、この酸化亜鉛膜のアルミナ基板に接
していた面側、即ちｃ軸配向軸の向きと反対の面を基板
面となるようにし、その面上にさらに輸送法で酸化亜鉛
を成膜した。これにより、互いにその配向軸の方向が１
８０度の角度をなす２つの領域が存在する酸化亜鉛膜を
得た。Next, the surface side of this zinc oxide film that was in contact with the alumina substrate, that is, the surface opposite to the direction of the c-axis orientation axis was made the substrate surface, and zinc oxide was further deposited on the surface by the transport method. A film was formed. As a result, the directions of their orientation axes are 1
A zinc oxide film having two regions forming an angle of 80 degrees was obtained.
【００１９】そして、この酸化亜鉛膜を、一旦、厚み５
００μｍに研磨した後、空気中、８００℃で１０時間、
Ｌｉを熱拡散させて絶縁処理を施し、酸化亜鉛圧電膜を
得た。Then, the zinc oxide film was once formed into a film having a thickness of 5
After polishing to 00 μm, in air at 800 ° C. for 10 hours,
Li was thermally diffused and subjected to insulation treatment to obtain a zinc oxide piezoelectric film.
【００２０】その後、この酸化亜鉛圧電膜両面を研磨
し、スライシングして、１０ｍｍ角、厚みがそれぞれ約
５００μｍ、約１００μｍの酸化亜鉛圧電膜を得た。そ
して、その両面に直径２ｍｍの部分電極を形成し、図１
に示す圧電装置１を得た。図１はその断面図である。同
図において、２および３はそれぞれ配向軸の向きがＣ
２，Ｃ３と互いに異なる酸化亜鉛圧電膜の領域であり、
４および５はそれぞれ電極である。Thereafter, both surfaces of this piezoelectric film of zinc oxide were polished and sliced to obtain a piezoelectric film of zinc oxide having a 10 mm square and a thickness of about 500 μm and about 100 μm, respectively. Then, a partial electrode having a diameter of 2 mm is formed on both surfaces thereof, and as shown in FIG.
A piezoelectric device 1 shown in was obtained. FIG. 1 is a sectional view thereof. In the figure, 2 and 3 have orientation axes of C, respectively.
2 and C3 are different regions of the zinc oxide piezoelectric film,
4 and 5 are electrodes, respectively.
【００２１】次に、得られた酸化亜鉛からなる圧電装置
の共振周波数をインピーダンスアナライザーで測定した
ところ、厚み５００μｍのもので１０．４ＭＨｚ、厚み
１００μｍのもので４９ＭＨｚの周波数位置に共振モー
ドが確認された。Next, when the resonance frequency of the obtained piezoelectric device made of zinc oxide was measured by an impedance analyzer, a resonance mode was confirmed at a frequency position of 10.4 MHz for a thickness of 500 μm and 49 MHz for a thickness of 100 μm. It was
【００２２】なお、上記実施例においては、輸送法で配
向性酸化亜鉛を成膜しているが、本発明は成膜法により
限定されるものではない。即ち、スパッタリング法、Ｃ
ＶＤ法等種々の方法で配向性酸化亜鉛を成膜することが
できる。Although the oriented zinc oxide film is formed by the transport method in the above embodiment, the present invention is not limited to the film formation method. That is, sputtering method, C
Oriented zinc oxide can be deposited by various methods such as the VD method.
【００２３】また、上記実施例においては、酸化亜鉛圧
電膜の２つの領域の配向軸の向きのなす角度が１８０度
となるようにしているが、本発明はこの角度に限定され
るものではない。即ち、二つの領域の配向軸の向きが異
なっておれば、即ち０度以外のどの角度においても、上
記実施例に示すのと同様な効果が得られる。Further, in the above embodiment, the angle formed by the orientation axes of the two regions of the zinc oxide piezoelectric film is set to 180 degrees, but the present invention is not limited to this angle. . That is, if the orientations of the orientation axes of the two regions are different, that is, at any angle other than 0 degree, the same effect as that shown in the above embodiment can be obtained.
【００２４】[0024]
【発明の効果】以上の説明で明らかなように、本発明の
圧電装置の構成によれば、従来の配向軸の向きが揃った
同じ厚みの酸化亜鉛圧電膜と比較して、より高い周波数
位置に厚み振動の共振モードが励振される。そして、互
いの領域の配向軸の向きがほぼ１８０度異なっている場
合には、従来の配向軸の向きが揃った同じ厚みのものと
比較して、２倍の周波数位置に厚み振動の共振モードが
励振される。As is apparent from the above description, according to the structure of the piezoelectric device of the present invention, the higher frequency position is obtained as compared with the conventional zinc oxide piezoelectric film having the same thickness in which the orientation axes are aligned. The resonance mode of thickness vibration is excited. When the orientation axes of the regions are different from each other by approximately 180 degrees, the resonance mode of the thickness vibration is doubled at the frequency position as compared with the conventional one having the same orientation axis orientation. Is excited.
【００２５】したがって、酸化亜鉛圧電膜からなるもの
であって、その厚みを薄くして機械的強度を低下させる
ことなく、厚み振動モードによってより高い共振周波数
を得ることができる圧電装置が得られる。Accordingly, it is possible to obtain a piezoelectric device which is made of a zinc oxide piezoelectric film and which can obtain a higher resonance frequency by the thickness vibration mode without reducing the mechanical strength by reducing the thickness.
【図１】本発明の圧電装置の一実施例の断面図である。FIG. 1 is a sectional view of an embodiment of a piezoelectric device of the present invention.
１ 圧電装置 ２、３ 酸化亜鉛圧電膜の領域 Ｃ２、Ｃ３ 配向軸の向き ４、５ 電極 1 Piezoelectric device 2, 3 Region of zinc oxide piezoelectric film C2, C3 Orientation of orientation axis 4, 5 electrode
Claims (2)
圧電膜はほぼ同じ厚みを有する２つの領域が厚み方向に
隣接し、かつ、互いの領域の配向軸の向きが異なってい
ることを特徴とする圧電装置。1. A zinc oxide piezoelectric film, wherein two regions having substantially the same thickness are adjacent to each other in the thickness direction, and the orientation axes of the regions are different from each other. Piezoelectric device.
０度異なっていることを特徴とする請求項１記載の圧電
装置。2. The orientation axes of the mutual regions are approximately 18
The piezoelectric device according to claim 1, wherein the piezoelectric device is different by 0 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6198403A JPH0865076A (en) | 1994-08-23 | 1994-08-23 | Piezoelectric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6198403A JPH0865076A (en) | 1994-08-23 | 1994-08-23 | Piezoelectric device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0865076A true JPH0865076A (en) | 1996-03-08 |
Family
ID=16390555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6198403A Pending JPH0865076A (en) | 1994-08-23 | 1994-08-23 | Piezoelectric device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0865076A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100425685B1 (en) * | 2001-09-21 | 2004-04-03 | 엘지전자 주식회사 | Manufacturing method for duplexer and bandpass filter using thinfilm bulk acoustic resonator |
| CN114208031A (en) * | 2019-07-31 | 2022-03-18 | 丘克斯奥尼克斯公司 | Acoustic device structures, filters, and systems |
-
1994
- 1994-08-23 JP JP6198403A patent/JPH0865076A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100425685B1 (en) * | 2001-09-21 | 2004-04-03 | 엘지전자 주식회사 | Manufacturing method for duplexer and bandpass filter using thinfilm bulk acoustic resonator |
| CN114208031A (en) * | 2019-07-31 | 2022-03-18 | 丘克斯奥尼克斯公司 | Acoustic device structures, filters, and systems |
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