JPH0870140A - Semiconductor light emitting element and its manufacture - Google Patents

Abstract

(57) [Abstract] [Purpose] An element structure capable of emitting light of multiple colors can be manufactured on the same substrate, the size of the light emitting element is not restricted, and a single element structure can provide multiple colors. Provided are a compact and highly functional semiconductor light emitting device and a method for manufacturing the same. [Structure] On a device structure made of a III-V group compound semiconductor containing arsenic and phosphorus as V group elements alone or simultaneously,
A semiconductor light emitting device in which a device structure made of a semiconductor containing nitrogen as a group V element is directly grown. And a method for manufacturing a semiconductor light emitting device using active nitrogen atoms generated by plasma as a raw material of nitrogen in the process of manufacturing a device structure made of a semiconductor containing nitrogen. [Effect] Since the active nitrogen atoms generated by the plasma are used, the growth temperature of the nitride semiconductor can be lowered, so that the nitride semiconductor can be grown thereon without destroying other element structures.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device used for displaying images and characters, optical communication and the like.

[0002]

2. Description of the Related Art Semiconductor light emitting devices have many advantages such as high efficiency of converting electric power into light, low power consumption, and high responsiveness to input signals. Widely used for optical communication. Semiconductor light-emitting devices that output visible light are not only replacing miniature bulbs for pilot lamps, but are also used for electronic display boards, auxiliary stop lamps for vehicles, and the like. A red light emitting device using AlGaAs and a green yellow light emitting device using GaP have been put to practical use for a long time. In recent years, Ga
It has been reported that a blue light emitting device using N is of good quality (S. Nakamura: Conference digest of 7th I).
nternational Conference on Metalorganic Vapor
Phase Epitaxy, Yokohama 1994, A9-1). By putting this blue light emitting element into practical use, all three primary colors of light can be produced by the semiconductor light emitting element, and in principle, multicolor display using the semiconductor light emitting element has become possible. In order to create various colors such as white light from the three primary colors of red, green, and blue, it is necessary to emit the respective primary colors in close proximity. In order to obtain white light using a light emitting device that has been put to practical use in the related art, one pixel becomes large due to the size limitation of the device, and it is difficult to manufacture a small display screen. In the current semiconductor growth technology, the nitride-based semiconductor used for the blue light emitting element has a very high crystal growth temperature of about 1000 ° C. Therefore, there is a problem in that, when an attempt is made to fabricate a light emitting element structure of another color, the light emitting element structure of another color is destroyed at the above temperature.

[0003]

As described above, in the prior art, in order to produce various colors such as white light from the three primary colors of red, green and blue, the respective primary colors are emitted at close positions. Since it has to be done, one pixel becomes large due to the size limitation of the element,
There is a problem that it is difficult to manufacture a small display screen.

An object of the present invention is to solve the above problems in the prior art and to fabricate a device structure capable of emitting a plurality of colors on the same substrate, thereby eliminating the restriction on the size of the light emitting device. It is an object of the present invention to provide a semiconductor light emitting device capable of multicoloring with one device structure and a method for manufacturing the same. Specifically, a structure made of a nitride semiconductor that emits green / blue light is used.
We propose a semiconductor light emitting device structure that can be grown directly on the device structure containing arsenic or phosphorus. Further, in the method for manufacturing a semiconductor light emitting element of the present invention, a green / blue light emitting element structure made of a nitride is grown without destroying the light emitting element structure made of a semiconductor containing arsenic or phosphorus, and light is emitted in multiple colors. A method of manufacturing a semiconductor light emitting device is provided.

[0005]

DISCLOSURE OF THE INVENTION The present inventor has found that in order to allow a plurality of colors to emit light in close proximity, a device structure having different emission wavelengths is formed on the same substrate. In other words, we have found a method to lower the crystal growth temperature of a nitride / green semiconductor emitting light to a temperature that does not destroy the element structure of an arsenic- or phosphorus-containing semiconductor. The semiconductor light emitting device structure that emits light in multiple colors is formed on the same substrate as the device structure that emits light in 1. In order to achieve the object of the present invention, the present invention has a structure as described in the claims. That is, as described in claim 1, V
Containing arsenic and phosphorus alone or simultaneously as group III-
A semiconductor light emitting device having a structure in which an element structure made of a semiconductor containing nitrogen as a group V element is directly grown on an element structure made of a group V compound semiconductor. Further, as described in claim 2, an element structure made of a semiconductor containing nitrogen as a V group element is formed on a device structure made of a III-V group compound semiconductor containing arsenic and phosphorus alone or simultaneously as a V group element. In the method for producing a semiconductor light emitting device by direct growth, active nitrogen atoms generated by plasma are used as a nitrogen source in the process of producing a device structure made of a semiconductor containing nitrogen.

[0006]

The light emitting device structure of the semiconductor light emitting device is produced by growing a thin film crystal on the substrate. When a semiconductor with a large bandgap that emits green and blue light is fabricated on a device structure that emits red, a semiconductor with a large bandgap does not absorb red light with a long wavelength, so red light is not attenuated from the surface. You can take it out. However, in the conventional crystal growth technique, the crystal growth temperature of a nitride-based semiconductor that emits blue light is extremely high at about 1000 ° C. AlGa that emits red light at this temperature
In the As / GaAs-based semiconductor, arsenic is evaporated from the surface, damage such as the interface of the element structure and the distribution of the doped impurities being changed by thermal diffusion becomes remarkable, and the light emitting element structure is destroyed. A GaP-based semiconductor, which is a material for a green light-emitting device, and an InGaAsP / InP-based semiconductor, which emits infrared light and is used in an optical communication device, similarly have a drawback that they cannot withstand high temperatures. The reason why a high temperature is required for the growth of the nitride semiconductor is that the decomposition temperature of the nitrogen raw material is high, and that the bonding force of the group III element and the nitrogen atom is strong, so that the migration distance of atoms on the surface is short at low temperature, Etc. As described in claim 1, the semiconductor light emitting device of the present invention has a device structure comprising a III-V group compound semiconductor containing arsenic and phosphorus as V group elements alone or simultaneously,
A semiconductor light emitting device having a structure in which a semiconductor containing nitrogen as a group V element is directly grown. By using such a light emitting device structure, a device emitting light in a plurality of colors including blue and green. The structure can be formed on the same substrate, and a small display screen or the like that emits light in multiple colors can be realized. In addition, as described in claim 2, V
Containing arsenic and phosphorus alone or simultaneously as group III-
In a method for producing a semiconductor light emitting device by directly growing an element structure made of a semiconductor containing nitrogen as a group V element on an element structure made of a group V compound semiconductor, the element structure made of a semiconductor containing nitrogen is produced. In the process, activated nitrogen atoms generated by plasma are used as a nitrogen raw material. As described above, when active nitrogen atoms generated by plasma decomposition are used as the raw material of the nitride, the active nitrogen atoms have high reactivity, so that crystal growth is possible even at low temperature, and the active atoms have large kinetic energy. Therefore, the movement of atoms on the surface of crystal growth is promoted, the surface during crystal growth is flattened, and defects in the crystal are reduced. By using active atoms, the growth temperature of a nitride-based semiconductor can be lowered to about 500 to 700 ° C. This temperature is approximately the same as the crystal growth temperature of an AlGaAs semiconductor, and is the semiconductor light emitting device structure A of the present invention.
l Without destroying the red light emitting structure of GaAs semiconductors,
It is possible to directly grow a blue light emitting structure of a nitride semiconductor on it, and it is possible to fabricate an element structure which emits light of a plurality of colors including blue and green on the same substrate.

[0007]

Embodiments of the present invention will be described below in more detail with reference to the drawings. Example 1 FIG. 4 is a schematic diagram showing an example of the configuration of a crystal growth apparatus for producing the semiconductor light emitting device structure of the present invention.
The crystal growth apparatus includes a gas mixing / supply unit 38, an active atom supply unit 41, a crystal growth unit 45, a vacuum exhaust unit 49, and an exhaust gas processing unit 50. In the gas mixing / supply unit 38, the flow rate of various raw material gases is controlled by the raw material gas flow rate regulator collection box 39, and a predetermined amount of raw material gas is supplied to the active atom supply unit 41 and the reaction vessel 46. In the active atom supply unit 41, the plasma is confined in the quartz tube 44, and the active atoms generated in the plasma region are entrained by the gas flow and supplied to the reaction container 46. The high frequency supplied from the high frequency oscillator 42 passes through the waveguide 43, and is adjusted by the electromagnetic field adjuster to maximize the absorption of the high frequency in the plasma region. In the crystal growth part 45, the semiconductor substrate 47 is kept at a predetermined temperature in the reaction container 46, and a semiconductor crystal thin film is grown on the substrate from the supplied source gas and active atoms. The evacuation unit 49 includes a vacuum pump and a shutoff valve, and keeps the pressure inside the reaction container 46 constant. In the exhaust gas processing unit 50, the toxic gas generated from the reaction container 46 and the gas mixing / supply unit 38 is detoxified and then discharged. Using the above crystal growth apparatus, an AlGaAs semiconductor is grown using an organic metal gas containing a group III metal, a group V hydride such as arsine, and a doping gas, and directly grown thereon.
A nitride-based semiconductor was grown. The present invention is characterized in that active nitrogen atoms are used for crystal growth of a nitride semiconductor. In the examples described below, nitrogen gas or ammonia gas was used as the nitrogen source gas and introduced into the active atom supply unit 41 to generate active nitrogen atoms.
Inert gas (argon) before starting supply of active nitrogen atoms
The plasma of No. 1 was ignited, and the nitrogen raw material was supplied to the plasma region to start the supply of active nitrogen atoms. The accuracy of starting and stopping the supply of active nitrogen atoms by this method of supplying active atoms has been improved to more than a second unit [M. Sato: 1994 Alternative Conference
on Solid State Devises and Materials, Yokohama
ma, 1994 S-I-1- (3)]. By this active nitrogen atom supply method, when the growth of the nitride semiconductor is started after the growth of the AlGaAs-based semiconductor, the interruption of the growth due to the operation of starting the supply of the active nitrogen atoms can be minimized, and impurities to the interface can be reduced. Can be suppressed. Reaction container 4
Since the supply of active nitrogen atoms can be started without changing the conditions such as the pressure inside 6, the initial conditions of crystal growth such as gas replacement in the reaction vessel 46 and the state of the semiconductor surface can be controlled with good reproducibility. It has a structure that allows it.

Example 2 Using the crystal growth apparatus shown in FIG. 4, a GaN-based blue light emitting structure was produced on an AlGaAs-based red light emitting structure. Triethylaluminum and triethylgallium were used as Group III raw materials, arsine and nitrogen gas were used as Group V raw materials, and hydrogen gas was used as a carrier gas. A p-type GaAs substrate is used as the substrate, and the temperature of the substrate is 5
00 ° C to 700 ° C, the pressure in the reaction vessel 46 is 50 Pa
Crystals were grown at (1 Pa is about 1/100000 atm). The device structure thus produced is shown in FIG. In FIG. 2, p-GaAs semiconductor substrate 26, p-AlGaAs confinement layer (Al = 0.5) 27, p-AlGaAs active layer (Al = 0.3) 28, n-AlGaAs confinement layer (Al = 0.5). ) 29, n-GaAs protective layer 30 is a typical AlGaAs-based red light emitting device structure,
aN buffer layer 31, n-AlGaN confinement layer (Al
= 0.2) 32, p-GaN active layer 33, p-AlGa
The N confinement layer (Al = 0.2) 34 is a typical GaN.
It is a system blue light emitting element structure. In the conventional red light emitting device, the n-GaAs protective layer 30 is made of AlGa which is easily oxidized.
Although it is grown to protect As, in the light emitting device structure of the present invention, in addition to protection against oxidation, a p-AlGaAs confinement layer (Al = 0.5) 27, p is formed during the GaN-based semiconductor growth process. -AlGaAs active layer (A
l = 0.3) 28, n-AlGaAs confinement layer (Al
= 0.5) 29, which also has a role of preventing arsenic from escaping from the layer directly involved in red light emission. n-Ga
After the layer of the As protective layer 30 is grown, the supply of the group III raw material and the group V raw material (arsine) is stopped, the inside of the reaction vessel 46 is replaced, and then the supply of active nitrogen atoms is first started.
The outermost surface of the n-GaAs layer 30 is nitrided to adjust the initial conditions. After that, the supply of the group III raw material is started to make n-Ga
The N buffer layer 31 is grown. After the crystal growth is completed, a resist is applied to the surface of the substrate, and a pattern is formed by lithography, leaving the resist only in a predetermined region. This is dry-etched to partially expose the n-GaAs protective layer 30, and then an electrode 36 is formed. FIG. 3 shows the photoluminescence spectrum of the structure consisting of the semiconductor layers 26 to 34 shown in FIG. 2 before applying the resist. Photoluminescence is a spectrum of light emitted when a semiconductor is irradiated with light having energy higher than the band gap and electrons and holes generated by the energy of light recombine. The measurement is performed at room temperature, and the wavelength of the excitation light is 32
A 5 nm He-Cd laser was used.

As is apparent from FIG. 3, the light emitting device having the structure shown in FIG. 2 has two emission peaks, red near 690 nm and blue near 470 nm. The 690 nm emission is from the p-AlGaAs active layer (Al = 0.3) 28 and the 470 nm emission is from the p-GaN active layer 33. n-GaN buffer layer 31, n-A
lGaN confinement layer (Al = 0.2) 32, p-GaN
Active layer 33, p-AlGaN confinement layer (Al = 0.
2) The nitride layer shown in 34 is transparent to the red light of 690 nm, so that the p-AlGaAs active layer (A
The light emission from (l = 0.3) 28 is not attenuated even when it passes through the nitride layers shown in 31 to 34 above. Next, the electrodes 35, 36 and 37 are attached, and a voltage is applied between the electrodes, so that the device structure emits light. The active layers of the p-AlGaAs active layer (Al = 0.3) 28 and the p-GaN active layer 33 are sandwiched by confinement layers having a wider band gap than these layers. Therefore, a pair of electron and hole is confined in the active layer, so that high luminous efficiency can be obtained.
The electrode 36 is a common negative electrode, and the electrodes 35 and 37 are
Apply a positive voltage to. When voltage was applied to the electrode 35, red light emission of 690 nm was obtained, and when voltage was applied to the electrode 37, blue light emission of 470 nm was obtained. By fabricating a nitride semiconductor device structure on the AlGaAs based light emitting device structure as shown in FIG. 2, a device structure emitting two colors of red and blue could be realized.

<Embodiment 3> A device structure similar to that shown in FIG.
It was made of an aP-based semiconductor structure and a nitride semiconductor structure. In this embodiment, the p-GaAs semiconductor substrate 2 shown in FIG.
6 instead of GaP substrate, and p-AlGaAs confining layer (Al = 0.5) 27 instead of p-GaP.
Instead of the -AlGaAs active layer (Al = 0.3) 28, a p-GaAsP (As = 0.1) active layer is used as n-AlG.
aAs confinement layer (Al = 0.5) 29 and n-Ga
Instead of the As protective layer 30, an n-GaP layer was used. The layers from the n-GaN buffer layer 31 to the p-AlGaN confinement layer (Al = 0.2) 34 grown on the n-GaP are the same semiconductor layers as in FIG. 2, and phosphine is used as a phosphorus source. Was used. Since GaAsP has a narrower bandgap than GaAs, electrons and holes are confined to emit light. When a voltage is applied between the electrodes 35 and 36,
It emitted a slightly greenish-yellow color centered at 580 nm. When a voltage was applied between the electrode 36 and the electrode 37, blue light emission of 470 nm was obtained as in Example 2. Since GaAsP with a small amount of As is an indirect transition type semiconductor, the emission intensity at 580 nm was lower than that in Example 2. In addition, the p-AlGaAs active layer (Al = 0.
3) By making 28 a nitrogen-doped GaP layer,
A green light emission centered at 565 nm was obtained. The slightly added nitrogen acts as an isoelectronic trap in the GaP layer and attracts electrons, so that it has the effect of improving the light emission efficiency from the indirect transition type semiconductor. However, compared with the case where GaAsP is used as the active layer, the emission efficiency of the entire light emitting device structure is low because there is no confinement of electrons and holes due to the difference in band gap. As described above, by producing a nitride semiconductor device structure on a GaP-based device structure, a device capable of emitting light in two colors of yellow or green and blue could be realized.

<Embodiment 4> The GaP-based semiconductor used for emitting green light in Embodiment 3 is an indirect transition type semiconductor and has a low luminous efficiency. The emission wavelength is 565 nm, which is a slightly yellowish green color. In order to realize the three primary colors of light, a pure green color was realized by using InGaN in the active layer. The manufactured light emitting device structure is shown in FIG.
As a p-InGaN (In = 0.25) active layer, and p-Al
The GaN confinement layer (Al = 0.2) 34 was used as a p-GaN confinement layer. InGaN is a direct transition type semiconductor whose bandgap is narrower than that of GaN, and its emission efficiency is GaP.
It is higher than that using.

When a voltage was applied between the electrodes 35 and 36, red light emission of 690 nm was obtained as in Example 2. When a voltage is applied between the electrode 36 and the electrode 37, 540
A pure green emission of nm was obtained. In the light emitting device structure of FIG. 2, by using InGaN for the active layer of the nitride semiconductor structure, a device emitting light of pure green and red could be realized.

<Embodiment 5> As shown in Embodiments 2 and 4, by using a nitride semiconductor structure,
An element structure that emits light in the three primary colors of light could be manufactured on the same substrate. By integrating these device structures, a semiconductor light emitting device capable of emitting all colors with one device structure was manufactured. FIG. 5 shows a structure capable of simultaneously emitting light of three primary colors using a conventional semiconductor light emitting device. This structure is red, green,
The blue semiconductor light emitting device is housed in the same package. By using the grounding lead 8 as a common negative electrode and applying a positive voltage to the lead wires of the red light emitting lead 5, the green light emitting lead 6, and the blue light emitting lead 7,
The red light emitting element 2, the green light emitting element 3, and the blue light emitting element 4 emit light in red, green, and blue, respectively. The intensity ratio of each color can be changed and the color can be changed by changing the voltage applied to the lead wire to change the light emission intensity, or by applying a pulsed voltage to change the blinking interval of the element. Since the light emitting elements of each color have a size of about 0.3 mm square when viewed from the top surface, the respective colors appear to be separated when viewed from a short distance. Further, it is difficult to store a large number of light emitting devices in the same package. In the semiconductor light emitting device structure of the present invention, a light emitting device having the same function as the assembly of the conventional light emitting devices shown in FIG. 5 can be manufactured on a single substrate, and the device structure is shown in FIG. . The manufacturing method is shown below. Semi-insulating Ga
On the As semiconductor substrate 9, p-GaAs buffer layer 10,
p-AlGaAs confinement layer (Al = 0.5) 11, p
-AlGaAs active layer (Al = 0.3) 12, n-Al
GaAs confinement layer (Al = 0.5) 13, n-GaA
An AlGaAs based semiconductor structure having an s protective layer 14 is prepared. After nitriding the outermost surface of the n-GaAs protective layer 14 with active nitrogen atoms, Ga raw material and active nitrogen atoms are simultaneously supplied to the n-GaN buffer layer 15 and n-AlGaN.
Confinement layer (Al = 0.2) 16, p-GaN active layer 1
7. A nitride semiconductor structure including a p-AlGaN confinement layer (Al = 0.2) 18 is manufactured. Next, take it out from the reaction container, apply resist, form a pattern,
Depending on the etching process, the n-GaAs protective layer 1 is partially
Expose 4 Then, the n-GaN buffer / confinement layer 19 and the p-InGaN active layer (In = 0.25) 2
0, a mask for preventing the growth of nitride is provided in a portion other than the portion where the p-GaN confinement layer 21 is grown. This masked structure is put into the reaction vessel again, and n-
After nitriding the exposed portion of the GaAs protective layer 14 from the mask with active nitrogen atoms, the layers 19, 20, and 21 are grown to form a device structure. The material after the second growth is taken out of the reaction container, and the mask is removed. In order to attach the electrode 23, p-AlGaA is partially used.
s confinement layer (Al = 0.5) 11 to n-GaAs
The layer of the protective layer 14 is etched, and the space of the electrode 23 is left to separate the elements from each other, and p-GaAs is used.
The layer of the buffer layer 10 is also etched. Next, the ground electrode 22, the red light emitting electrode 23, the green light emitting electrode 24, and the blue light emitting electrode 25 are produced. Through the above steps, the semiconductor light emitting device having the structure shown in FIG. 1 can be manufactured. The ground electrode 22 is used as the negative ground electrode, and the red light emitting electrode 23, the green light emitting electrode 24, and the blue light emitting electrode 25.
When a voltage is applied to the p-AlGaAs active layer (Al =
0.3) 12, p-InGaN active layer (In = 0.2
5) 20, the p-GaN active layer 17 is respectively red, green,
It emits blue light. In fabricating the semiconductor light emitting device structure of the present invention, by using a fine structure processing technique used in the manufacture of LSI or the like for pattern formation, etching, masking, and electrode formation, 30 μm (0 .0
It is possible to fabricate the entire structure shown in FIG. 1 in an area as small as 3 mm square. Since the distance between the light emitting areas is sufficiently smaller than the resolution of human eyes, it is possible to avoid that the colors of the light emitting areas appear to be separated. Also,
In the structure shown in FIG. 1, since many element structures can be simultaneously manufactured on the same semiconductor substrate, it becomes easy to accommodate many light emitting element structures in the same package. In this case, as a method of changing the colors, it is effective not only to control the light emission / flicker interval of each primary color, but also to change the number of element structures emitting light. This allows
It enables fine color control. By using the microfabrication technology together with the technology for manufacturing the nitride semiconductor structure on the AlGaAs semiconductor structure, it is possible to manufacture an element structure that emits light in all three primary colors of light. We realized that all colors can be made with the light emitting device.

[0014]

As described in detail above, in the semiconductor light emitting device of the present invention, the crystal growth temperature of the nitride semiconductor can be remarkably lowered by using the active nitrogen atoms generated by the plasma. Allows a nitride semiconductor to grow on the other semiconductor element structure containing arsenic or phosphorus without destroying it, forming an element structure emitting light in a plurality of colors including blue and green on the same substrate. Therefore, it is possible to realize a semiconductor light emitting device that is small in size and has high functionality and emits light in multiple colors.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing an example of a cross-sectional structure of a semiconductor light emitting device capable of emitting three primary colors of light from the same semiconductor substrate illustrated in a fifth embodiment of the present invention.

FIG. 2 is a schematic diagram showing an example of a cross-sectional structure of a semiconductor light emitting element that emits red and blue light, which is illustrated in Example 2 of the present invention.

FIG. 3 is a diagram showing a photoluminescence spectrum of the semiconductor light emitting device having the structure shown in FIG.

FIG. 4 is a schematic diagram showing a configuration of a crystal growth apparatus for producing a semiconductor light emitting element used in an example of the present invention.

FIG. 5 is a schematic view showing a configuration of a conventional element assembly capable of emitting three primary colors of light from the same package.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Resin lens 2 ... Red light emitting element 3 ... Green light emitting element 4 ... Blue light emitting element 5 ... Red light emitting lead 6 ... Green light emitting lead 7 ... Blue light emitting lead 8 ... Grounding lead 9 ... Semi-insulating GaAs semiconductor substrate 10 ... p-GaAs buffer layer 11 ... p-AlGaAs confinement layer (Al = 0.5) 12 ... p-AlGaAs active layer (Al = 0.3) 13 ... n-AlGaAs confinement layer (Al = 0.5) 14 ... n-GaAs protective layer 15 ... n-GaN buffer layer 16 ... n-AlGaN confinement layer (Al = 0.2) 17 ... p-GaN active layer 18 ... p-AlGaN confinement layer (Al = 0.2) 19 ... n-GaN buffer / confinement layer 20 ... p-InGaN active layer (In = 0.25) 21 ... p-GaN confinement layer 22 ... Ground electrode 23 ... Red light emitting electrode 24 ... Green Electrode for light 25 ... Electrode for blue light emission 26 ... p-GaAs semiconductor substrate 27 ... p-AlGaAs confinement layer (Al = 0.5) 28 ... p-AlGaAs active layer (Al = 0.3) 29 ... n-AlGaAs confinement Layer (Al = 0.5) 30 ... n-GaAs protective layer 31 ... n-GaN buffer layer 32 ... n-AlGaN confinement layer (Al = 0.2) 33 ... p-GaN active layer 34 ... p-AlGaN confinement layer (Al = 0.2) 35, 36, 37 ... Electrode 38 ... Gas mixing / supply unit 39 ... Collecting box for raw material gas flow rate regulator 40 ... Gas pipe 41 ... Active atom supply unit 42 ... High frequency oscillator 43 ... Waveguide 44 ... Quartz tube 45 ... Crystal growth part 46 ... Reaction container 47 ... Semiconductor substrate 48 ... Heater 49 ... Vacuum exhaust part 50 ... Exhaust gas treatment part

Claims (2)

[Claims] 1. An element structure made of a semiconductor containing nitrogen as a group V element is directly grown on an element structure made of a III-V group compound semiconductor containing arsenic and phosphorus alone or simultaneously as a group V element. A semiconductor light-emitting device characterized by. 2. Semiconductor light emission by directly growing an element structure made of a semiconductor containing nitrogen as a group V element on an element structure made of a III-V group compound semiconductor containing arsenic and phosphorus alone or simultaneously as a group V element. A method for manufacturing a semiconductor light emitting device, characterized in that active nitrogen atoms generated by plasma are used as a nitrogen source in the process of manufacturing a device structure made of a semiconductor containing nitrogen.