JPH0874043A - Cobalt silicide sintered target material for sputtering hardly generating particles during film formation - Google Patents
Cobalt silicide sintered target material for sputtering hardly generating particles during film formationInfo
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- JPH0874043A JPH0874043A JP6216811A JP21681194A JPH0874043A JP H0874043 A JPH0874043 A JP H0874043A JP 6216811 A JP6216811 A JP 6216811A JP 21681194 A JP21681194 A JP 21681194A JP H0874043 A JPH0874043 A JP H0874043A
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Abstract
(57)【要約】
【目的】 成膜中にパ−ティクル発生の少ないスパッタ
リング用Ｃｏシリサイド焼結タ−ゲット材を提供する。
【構成】 スパッタリング用Ｃｏシリサイド焼結タ−ゲ
ット材が、ＣｏＳｉn（ただし、ｎはモル比で１．８〜
２．５）の組成式を満足し、かつＣｏ−Ｓｉ ２元合金
系状態図で示されるＣｏＳｉ2化合物が反応生成相とし
て存在し、このＣｏＳｉ2反応生成相中に、同状態図に
おけるＣｏＳｉ−ＣｏＳｉ2共晶の第１未反応共晶相と
ＣｏＳｉ2-Ｓｉ共晶の第２未反応共晶相が分散分布した
組織を有する。(57) [Abstract] [Purpose] To provide a Co silicide sintered target material for sputtering, which causes less particles during film formation. [Configuration] sputtering Co silicide grilled Yuita - Get material, CoSi n (where, n is in a molar ratio 1.8
The composition formula of 2.5) is satisfied, and the CoSi 2 compound shown in the Co—Si binary alloy phase diagram is present as a reaction product phase. In the CoSi 2 reaction product phase, the CoSi— the second unreacted eutectic phase of the first unreacted eutectic phase and CoSi 2 -Si eutectic CoSi 2 eutectic having tissue was dispersed distribution.
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体デバイスにお
ける電極や配線などを構成するＣｏシリサイド薄膜をス
パッタリングにより形成するのに用いた場合に、成膜中
に薄膜欠陥となるパ−ティクルの発生が著しく少ない焼
結タ−ゲット材に関するものである。BACKGROUND OF THE INVENTION The present invention, when used to form a Co silicide thin film which constitutes an electrode or wiring in a semiconductor device by sputtering, causes the generation of particles which become thin film defects during film formation. It relates to significantly less sintered target material.
【０００２】[0002]
【従来の技術】従来、半導体デバイスの製造に際して、
スパッタリングにより低抵抗のＣｏシリサイド薄膜を形
成することが行われる場合があり、これにＣｏシリサイ
ド焼結タ−ゲット材が用いられている。また、上記Ｃｏ
シリサイド焼結タ−ゲット材は、原料としてＣｏ板材と
Ｓｉ塊材を用い、これを所定の割合に秤量し、非酸化性
雰囲気中で電子ビ−ム溶解などにより溶解し、ついで、
粉砕し、ホットプレスすることにより製造されることも
知られている。さらに、この結果得られたＣｏシリサイ
ド焼結タ−ゲット材は、組成式：ＣｏＳｉn（ｎはモル
比で１．８〜２．５）を満足する場合、すなわち原料と
してＣｏＳｉ1.8-2.0の組成を有する粉砕粉末を用いて
ホットプレスした場合には、Ｃｏ−Ｓｉ２元合金系状態
図におけるＣｏＳｉ2化合物とＣｏＳｉ化合物の２相組
織を有し、また、組成式：ＣｏＳｉ2（ｎはモル比で
２．０〜２．５）を満足するすなわちＣｏＳｉ2.0-2.5
の組成を有する粉砕粉末を用いてホットプレスした場合
には、同じく同状態図におけるＣｏＳｉ2化合物とＳｉ
の２相組織をもつようになることも知られている。2. Description of the Related Art Conventionally, when manufacturing a semiconductor device,
A Co silicide thin film having a low resistance may be formed by sputtering, and a Co silicide sintered target material is used for this. In addition, the above Co
The silicide sintered target material uses a Co plate material and a Si lump material as raw materials, and weighs them at a predetermined ratio and dissolves them by electron beam melting or the like in a non-oxidizing atmosphere.
It is also known to be manufactured by crushing and hot pressing. Furthermore, the resulting Co silicide sintered Yuita - target material, the composition formula: If CoSi n (n is the 1.8 to 2.5 by molar ratio) is satisfied, i.e. the composition of CoSi 1.8-2.0 as a raw material In the case of hot pressing using a pulverized powder having the following formula, it has a two-phase structure of a CoSi 2 compound and a CoSi compound in a Co—Si binary alloy phase diagram, and a composition formula: CoSi 2 (n is a molar ratio). 2.0-2.5), that is, CoSi 2.0-2.5
When hot pressing was performed using a pulverized powder having the composition of, the same CoSi 2 compound and Si in the same phase diagram were used.
It is also known to have a two-phase organization.
【０００３】[0003]
【発明が解決しようとする課題】−方、近年のスパッタ
リング技術の進歩はめざましく、スパッタリング装置の
高出力化および大型化が可能となり、これに伴い、Ｃｏ
シリサイド薄膜の形成に際しても、成膜の高速化および
大面積化がはかられる傾向にあるが、上記の従来Ｃｏシ
リサイド焼結タ−ゲット材においては、これを用いて高
速成膜や大面積成膜をおこなうと、成膜中にパ−ティク
ル（微細粒子）が発生し易くなるという問題がある。な
お、薄膜中にパ−ティクルが多数存在すると、これが例
えば０．５〜４μｍの線幅で形成された電極を断線させ
たり、配線内を短絡させたりするなどの原因となり、不
良率が増大するようになるものである。On the other hand, the progress of sputtering technology in recent years has been remarkable, and it has become possible to increase the output and size of a sputtering apparatus.
Even when forming a silicide thin film, there is a tendency for film formation to be speeded up and to have a large area. However, in the above conventional Co silicide sintered target material, this is used to form a high speed film and a large area. When a film is formed, there is a problem that particles (fine particles) are easily generated during film formation. If a large number of particles are present in the thin film, this may cause, for example, disconnection of electrodes formed with a line width of 0.5 to 4 μm or short circuit in the wiring, thus increasing the defect rate. It will be like this.
【０００４】[0004]
【課題を解決するための手段】そこで、本発明者等は、
上述のような観点から、Ｃｏシリサイド薄膜のスパッタ
リングによる形成に際して、パ−ティクル発生の少ない
Ｃｏシリサイド焼結タ−ゲット材を開発すべく研究を行
なつた結果、原料粉末として、予めＣｏ板材とＳｉ塊材
を所定の割合に秤量し、これを例えば電子ビ−ム溶解な
どにより溶解し、粉砕することにより調製した、Ｃｏ−
Ｓｉ２元合金系状態図におけるＣｏＳｉ化合物とＣｏＳ
ｉ2化合物の共晶からなるＣｏＳｉ−ＣｏＳｉ2共晶粉末
と、同じく同状態図におけるＣｏＳｉ2化合物とＳｉの
共晶からなるＣｏＳｉ2-Ｓｉ共晶粉末を用い、これら両
原料粉末を所定の割合に配合し、混合した後、ホットプ
レスすることにより組成式：ＣｏＳｉn（ただし、ｎは
モル比で１．８〜２．５）を満足するＣｏシリサイド焼
結タ−ゲット材を製造すると、上記ホットプレス時に、
上記ＣｏＳｉ−ＣｏＳｉ2共晶粉末とＣｏＳｉ2-Ｓｉ共
晶粉末が反応して、これら両者間にはＣｏＳｉ2化合物
が形成されるようになり、したがつてこの結果のＣｏシ
リサイド焼結タ−ゲット材は、ＣｏＳｉ2化合物の反応
生成相中に、未反応のＣｏＳｉ−ＣｏＳｉ2共晶相と同
じく未反応のＣｏＳｉ2-Ｓｉ共晶相が分散分布した組織
をもつようになり、このような組織を有するＣｏシリサ
イド焼結タ−ゲット材においては、成膜中のパ−ティク
ル発生が著しく減少し、パ−ティクルのきわめて少ない
Ｃｏシリサイド薄膜の形成が可能になるという研究結果
を得たのである。Therefore, the present inventors have
From the above viewpoints, when the Co silicide thin film was formed by sputtering, research was conducted to develop a Co silicide sintered target material that generates less particles, and as a result, a Co plate material and Si A lump material was weighed in a predetermined ratio, dissolved by, for example, electron beam melting, and prepared by pulverizing Co-
CoSi compound and CoS in Si binary alloy phase diagram
and CoSi-CoSi 2 eutectic powder made of eutectic i 2 compounds, using CoSi 2 -Si eutectic powder made of eutectic CoSi 2 compound and Si in same the state diagram, the ratio of these two raw material powders of predetermined after blended, and mixed in the composition formula by hot pressing: CoSi n (where, n is 1.8 to 2.5 molar ratio) Co silicide sintered Yuita satisfying - when producing the target material, the During hot pressing,
The CoSi—CoSi 2 eutectic powder and the CoSi 2 —Si eutectic powder react with each other to form a CoSi 2 compound between them, so that the resulting Co silicide sintering target is obtained. The material has a structure in which an unreacted CoSi-CoSi 2 eutectic phase and an unreacted CoSi 2 -Si eutectic phase are dispersedly distributed in the reaction-generated phase of the CoSi 2 compound. In the case of the Co silicide sintered target material having Pt, the research result was obtained that the generation of particles during film formation is significantly reduced, and a Co silicide thin film with extremely few particles can be formed.
【０００５】この発明は、上記の研究結果にもとづいて
なされたものであつて、ＣｏＳｉn（ただし、ｎはモル
比で１．８〜２．５）の組成式を満足し、かつＣｏ−Ｓ
ｉ２元合金系状態図で示されるＣｏＳｉ2化合物が反応
生成相として存在し、このＣｏＳｉ2化合物反応生成相
中に、同状態図におけるＣｏＳｉ化合物とＣｏＳｉ2化
合物の共晶からなる第１未反応共晶相と、同じく同状態
図におけるＣｏＳｉ2化合物とＳｉの共晶からなる第２
未反応共晶相とが分散 分布した組織を有するスパッタ
リング用Ｃｏシリサイド焼結タ−ゲット材に特徴を有す
るものである。なお、組成式におけるｎの値を１．８〜
２．５としたのは、ｎの値が１．８未満でも、また２．
５を越えても所望の低抵抗をもつたＣｏシリサイド薄膜
の形成を行うことができないという理由によるものであ
る。[0005] The present invention shall apply was made based on the above findings, CoSi n (where, n is the molar ratio 1.8 to 2.5) satisfy the composition formula, and Co-S
The CoSi 2 compound shown in the i binary alloy phase diagram exists as a reaction product phase, and in this CoSi 2 compound reaction product phase, the first unreacted co-crystal composed of the eutectic of the CoSi compound and the CoSi 2 compound in the same phase diagram is present. A second phase consisting of a crystal phase and a eutectic of CoSi 2 compound and Si in the same phase diagram
It is characterized by a Co silicide sintered target material for sputtering having a structure in which an unreacted eutectic phase is dispersed and distributed. The value of n in the composition formula is 1.8 to
The reason for setting 2.5 is that n is less than 1.8 and 2.
This is because a Co silicide thin film having a desired low resistance cannot be formed even if the value exceeds 5.
【０００６】[0006]
【実施例】つぎに、この発明のＣｏシリサイド焼結タ−
ゲット材を実施例により具体的に説明する。 まず、５
Ｎ（ナイン）の高純度Ｃｏ板材と７Ｎの高純度Ｓｉ塊材
を用い、これらを所定の割合に秤量し、真空度：１０−
５tｏｒｒの雰囲気中、水冷銅ハ−スにて電子ビ−ム溶
解を行ない、ついでジョ−クラッシャ−にて粗粉砕し、
さらにボ−ルミルで微粉砕して、それぞれＣｏ−Ｓｉ２
元合金系状態図におけるＣｏＳｉ化合物とＣｏＳｉ2化
合物の共晶からなるＣｏＳｉ−ＣｏＳｉ2共晶粉末と、
同じく同状態図におけるＣｏＳｉ2化合物とＳｉの共晶
からなるＣｏＳｉ2-Ｓｉ共晶粉末を調製し、ついでこれ
ら両共晶粉末を原料粉末として用い、２０〜１００μｍ
の範囲内の所定の平均粒径に調整した状態で、表１に示
される割合に配合し、Ｖ型ミキサ−にて３０分間混合し
た後、温度：１２３０℃、圧力：２０ＭＰａ、保持時
間：４０分の条件でホットプレスすることにより組成
式：ＣｏＳｉnのｎの値がそれぞれ表１に示される値を
もち、かついずれもＣｏＳｉ2化合物反応生成相中に、
ＣｏＳｉ−ＣｏＳｉ2共晶の第１未反応共晶相とＣｏＳ
ｉ2-Ｓｉ共晶の第２未反応共晶相が分散分布した組織を
有し、さらに直径：２５０ｍｍ、厚さ：１０ｍｍの寸法
をもつた本発明Ｃｏシリサイド焼結タ−ゲット材（以
下、本発明タ−ゲット材という）１〜８をそれぞれ製造
した。EXAMPLES Next, the Co silicide sintering type of the present invention was used.
The get material will be specifically described by way of examples. First, 5
N (nine) high-purity Co plate material and 7N high-purity Si lump material were used, these were weighed at a predetermined ratio, and the degree of vacuum was 10 −.
In an atmosphere of 5 torr, an electron beam was melted with a water-cooled copper hearth, and then coarsely crushed with a jaw crusher,
Further, finely pulverized with a ball mill to obtain Co-Si2
A CoSi—CoSi 2 eutectic powder consisting of a eutectic of a CoSi compound and a CoSi 2 compound in the original alloy phase diagram,
Similarly, a CoSi 2 —Si eutectic powder composed of a eutectic of CoSi 2 compound and Si in the same phase diagram was prepared, and then both of these eutectic powders were used as raw material powders, and 20 to 100 μm.
After adjusting to a predetermined average particle size within the range, the ingredients were blended in the proportions shown in Table 1 and mixed in a V-type mixer for 30 minutes, then, temperature: 1230 ° C., pressure: 20 MPa, holding time: 40 By hot pressing under the condition of minutes, the values of n in the composition formula: CoSi n have the values shown in Table 1, and both are in the CoSi 2 compound reaction production phase.
First unreacted eutectic phase of CoSi-CoSi 2 eutectic and CoS
i 2 second unreacted eutectic phase of -Si eutectic has a dispersed distribution organization, further diameter: 250 mm, thickness: present invention having dimensions of 10 mm Co silicide sintered Yuita - target material (hereinafter, Inventive target materials) 1 to 8 were manufactured respectively.
【０００７】また、比較の目的で、上記の高純度Ｃｏ板
材と高純度Ｓｉ塊材の秤量割合をかえて組成式：ＣｏＳ
ｉnのｎが表２に示される値のＣｏＳｉn粉末を調製し、
これを原料粉末として用いる以外は同一の条件で従来Ｃ
ｏシリサイド焼結タ−ゲット材（以下、従来タ−ゲット
材という）１〜８をそれぞれ製造した。さらに表２には
この結果得られた従来タ−ゲット材１〜８の構成相（組
織）を示した。For the purpose of comparison, the composition formula: CoS was changed by changing the weighing ratios of the high-purity Co plate material and the high-purity Si lump material.
A CoSi n powder having a value of n of i n shown in Table 2 was prepared,
Conventional C under the same conditions except that this is used as raw material powder
o Silicide sintered target materials (hereinafter referred to as conventional target materials) 1 to 8 were manufactured. Further, Table 2 shows constituent phases (structures) of the conventional target materials 1 to 8 obtained as a result.
【０００８】つぎに、この結果得られた各種タ−ゲット
材を、スパッタリング装置に組み込み、 基板：直径１５２ｍｍのＳｉウェハ 基板温度：２００℃ 基板とタ−ゲツト材間の距離：５０ｍｍ 雰囲気：７Ｘ１０−３tｏｒｒのＡｒガス 直流出力：１．３２ｋＷ スパツタ時間：１分 の条件でＳｉウェハの表面にＣｏシリサイド薄膜を形成
し、Ｓｉウェハ表面の薄膜における直径：０．３μｍ以
上のパ−ティクル発生数を測定した。この測定結果をそ
れぞれ表１，２に示した。Next, various target materials obtained as a result were incorporated into a sputtering apparatus, and a substrate: Si wafer having a diameter of 152 mm, a substrate temperature: 200 ° C., a distance between the substrate and the target material: 50 mm, an atmosphere: 7 × 10- Ar gas of 3 torr DC output: 1.32 kW Sputtering time: 1 minute A Co silicide thin film was formed on the surface of the Si wafer, and the number of particles with a diameter of 0.3 μm or more in the thin film on the surface of the Si wafer was measured. did. The measurement results are shown in Tables 1 and 2, respectively.
【０００９】[0009]
【表１】 [Table 1]
【００１０】[0010]
【表２】 [Table 2]
【００１１】[0011]
【発明の効果】表１，２に示される結果から、ＣｏＳｉ
2反応生成相中に、ＣｏＳｉ−ＣｏＳｉ2共晶の第１未反
応共晶相と、ＣｏＳｉ2-Ｓｉ共晶の第２未反応共晶相が
分散分布する３相組織を有する本発明タ−ゲット材１〜
８で形成されたＣｏシリサイド薄膜中には、ＣｏＳｉ2
相とＳｉ相、またはＣｏＳｉ相とＣｏＳｉ2相の２相組
織を有する従来タ−ゲット材１〜８に比してパ−ティク
ル発生が著しく少ないことが明らかである。上述のよう
に、この発明のスパッタリング用Ｃｏシリサイド焼結タ
−ゲット材は、成膜中のパ−ティクル発生がきわめて少
なく、これは成膜速度を上げても、また成膜面積を大き
くしても変わらないので、スパッタリング装置の高出力
化および大型化に十分満足に対応することができるもの
である。From the results shown in Tables 1 and 2, CoSi
The present invention has a three-phase structure in which a first unreacted eutectic phase of CoSi—CoSi 2 eutectic and a second unreacted eutectic phase of CoSi 2 —Si eutectic are dispersed and distributed in the 2 reaction-produced phase. Get material 1
8 Co formed in the silicide thin film, CoSi 2
It is clear that particles are remarkably less generated than the conventional target materials 1 to 8 having a two-phase structure of a phase and a Si phase or a CoSi phase and a CoSi 2 phase. As described above, the Co silicide sintered target material for sputtering according to the present invention generates very little particles during film formation, which means that the film formation area is increased even if the film formation speed is increased. Since it does not change, it is possible to satisfactorily deal with higher output and larger size of the sputtering apparatus.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成６年１１月１１日[Submission date] November 11, 1994
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００２[Name of item to be corrected] 0002
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００２】[0002]
【従来の技術】従来、半導体デバイスの製造に際して、
スパッタリングにより低抵抗のＣｏシリサイド薄膜を形
成することが行われる場合があり、これにＣｏシリサイ
ド焼結タ−ゲット材が用いられている。また、上記Ｃｏ
シリサイド焼結タ−ゲット材は、原料としてＣｏ板材と
Ｓｉ塊材を用い、これを所定の割合に秤量し、非酸化性
雰囲気中で電子ビ−ム溶解などにより溶解し、ついで、
粉砕し、ホットプレスすることにより製造されることも
知られている。さらに、この結果得られたＣｏシリサイ
ド焼結タ−ゲット材は、組成式：ＣｏＳｉn（ｎはモル
比で１．８〜２．５）を満足する場合、すなわち原料と
してＣｏＳｉ1.8-2.0の組成を有する粉砕粉末を用いて
ホットプレスした場合には、Ｃｏ−Ｓｉ２元合金系状態
図におけるＣｏＳｉ2化合物とＣｏＳｉ化合物の２相組
織を有し、また、組成式：ＣｏＳｉn （ｎはモル比で
２．０〜２．５）を満足するすなわちＣｏＳｉ2.0-2.5
の組成を有する粉砕粉末を用いてホットプレスした場合
には、同じく同状態図におけるＣｏＳｉ2化合物とＳｉ
の２相組織をもつようになることも知られている。2. Description of the Related Art Conventionally, when manufacturing a semiconductor device,
A Co silicide thin film having a low resistance may be formed by sputtering, and a Co silicide sintered target material is used for this. In addition, the above Co
The silicide sintered target material uses a Co plate material and a Si lump material as raw materials, and weighs them at a predetermined ratio and dissolves them by electron beam melting or the like in a non-oxidizing atmosphere.
It is also known to be manufactured by crushing and hot pressing. Furthermore, the resulting Co silicide sintered Yuita - target material, the composition formula: If CoSi n (n is the 1.8 to 2.5 by molar ratio) is satisfied, i.e. the composition of CoSi 1.8-2.0 as a raw material In the case of hot pressing using a pulverized powder having the following formula, it has a two-phase structure of a CoSi 2 compound and a CoSi compound in a Co—Si binary alloy phase diagram, and a composition formula: CoSi n (n is a molar ratio). 2.0-2.5), that is, CoSi 2.0-2.5
When hot pressing was performed using a pulverized powder having the composition of, the same CoSi 2 compound and Si in the same phase diagram were used.
It is also known to have a two-phase organization.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/203 Ｓ 9545−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H01L 21/203 S 9545-4M
Claims (1)
８〜２．５）の組成式を満足し、かつＣｏ−Ｓｉ２元合
金系状態図で示されるＣｏＳｉ2化合物が反応生成相と
して存在し、このＣｏＳｉ2化合物反応生成相中に、同
状態図におけるＣｏＳｉ化合物とＣｏＳｉ2化合物の共
晶からなる第１未反応共晶相と、同じく同状態図におけ
るＣｏＳｉ2化合物とＳｉの共晶からなる第２未反応共
晶相とが分散分布した組織を有することを特徴とする成
膜中にパ−ティクル発生の少ないスパッタリング用Ｃｏ
シリサイド焼結タ−ゲット材。1. CoSi n (where n is a molar ratio of 1.
8 to 2.5), and the CoSi 2 compound shown in the Co—Si binary alloy phase diagram is present as a reaction product phase, and in this CoSi 2 compound reaction product phase, It has a structure in which a first unreacted eutectic phase composed of a eutectic of a CoSi compound and a CoSi 2 compound and a second unreacted eutectic phase composed of a eutectic of a CoSi 2 compound and Si in the same phase diagram are dispersedly distributed. Coating for sputtering, which is characterized in that little particles are generated during film formation
Silicide sintered target material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6216811A JPH0874043A (en) | 1994-09-12 | 1994-09-12 | Cobalt silicide sintered target material for sputtering hardly generating particles during film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6216811A JPH0874043A (en) | 1994-09-12 | 1994-09-12 | Cobalt silicide sintered target material for sputtering hardly generating particles during film formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0874043A true JPH0874043A (en) | 1996-03-19 |
Family
ID=16694266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6216811A Withdrawn JPH0874043A (en) | 1994-09-12 | 1994-09-12 | Cobalt silicide sintered target material for sputtering hardly generating particles during film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0874043A (en) |
-
1994
- 1994-09-12 JP JP6216811A patent/JPH0874043A/en not_active Withdrawn
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| A300 | Withdrawal of application because of no request for examination |
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