JPH087745A - Electron-emitting device substrate, manufacturing method thereof, and image forming apparatus incorporating the same - Google Patents

Abstract

PURPOSE:To provide an electron emitting element substrate having a high step coverage by suppressing the level difference of wiring in the line direction and column direction. CONSTITUTION:Column wirings 502 and filler wirings 502a are provided on a base board 501, and insulative material 503 is applied in the parts where the line wiring 7 and column wiringg are scheduled to make intersection. Then line wiring 504 are provided, and finally a thin film 506 including element electrode 505 and electron emission part is formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface conduction electron-emitting device substrate, a method for manufacturing the same, and a planar image forming apparatus incorporating the same substrate.

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known for use in display devices and the like. The cold cathode electron beam includes field emission type (hereinafter abbreviated as FE), metal / insulating layer / metal type (hereinafter abbreviated as MIM), surface conduction electron emission element (hereinafter abbreviated as SCE), and the like.

As an example of the FE type, W. P. Dyke &
W. W. Dolan, "Fielddemissio
n ”, Advance in Electron Ph
ysics, 8, 89 (1956) and the like are known.

An example of the MIM type is C.I. A. Mea
d, "The tunnel-emission am
plier, J. et al. Appl. Phys. 32, 64
6 (1961) and C.I. A. Spndt, "Physic
al properties of thin-film
field emission cathode sw
it mollybdenum cones ", JA
ppl. Phys. , 47, 5248, (1976) and the like are known.

As an example of the SCE type, M. I. Elin
son, Radio Eng. Electron Ph
y. 10, (1965) and so on.

The SCE utilizes a phenomenon in which electron emission occurs when a current is passed in parallel with the film surface of a thin film having a small area formed on a substrate.

As the surface conduction electron-emitting device, one using the SnO ₂ thin film by Erinson et al.
Thin film [G. Dittmer: "Thin S
old Films ", 9, 317 (1972)],
In ₂ O ₃ / SnO ₂ thin film [M. Hartw
ell and C. G. Fonstad: “IEEE
Trans. ED Conf. "519 (197
5)], by carbon thin film [Hiraki Araki et al .: Vacuum,
Vol. 26, No. 1, 22 (1983)] and the like are reported.

As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell device configuration is shown in FIG.

In the figure, reference numeral 701 is an insulating substrate.
704 is a thin film including an electron emitting portion. An electron emitting portion 703 is formed by subjecting a thin film for forming an electron emitting portion formed of an H-shaped metal oxide thin film or the like formed by sputtering to an energization process called forming described later. The length L1 of the element in the figure is about 0.5 mm to 1 m.
m, the width W2 of the element is about 0.1 mm. Conventionally, in these surface conduction electron-emitting devices, it is general that the electron-emitting portion 703 is formed in advance by performing an energization process called forming on the electron-emitting portion forming thin film before the electron emission.

That is, the forming means that a voltage is applied to both ends of the electron-emitting-portion forming thin film to locally energize the electron-emitting-portion forming thin film so that the electron-emitting-portion forming thin film is brought into a high resistance state. That is, the electron emission portion 703 is formed.

In some cases, the electron emitting portion 703 has a crack in a part of the thin film for forming the electron emitting portion, and the electron is emitted from the vicinity of the crack.

Hereinafter, a thin film for forming an electron emitting portion including the electron emitting portion 703 generated by forming will be referred to as a thin film 704 including an electron emitting portion. The surface conduction electron-emitting device that has undergone the forming process is a thin film 704 including the electron-emitting portion.
Electrons are emitted from the electron emitting portion 703 by applying a voltage to the device and passing a current through the device surface.

FIG. 8 shows the structure of a surface conduction electron-emitting device proposed by the present applicants. (JP-A-2-5682
2) In the figure, 801 is an insulating substrate, and 805 and 806.
Is an element electrode, 804 is a thin film including an electron emitting portion, and 803 is an electron emitting portion. Of the thin film 804 including the electron emitting portion, the electron emitting portion 803 is made of conductive fine particles having a particle diameter of several tens of angstroms, and the other thin film 804 including the electron emitting portion is made of a fine particle film. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not limited to a state in which the fine particles are individually dispersed and arranged, but a state in which the fine particles are adjacent to each other or overlap each other (including an island shape). ) Membrane. In addition to this, the thin film 804 including the electron emitting portion may be a carbon thin film in which conductive fine particles are dispersed.

Specific examples of the material of the thin film 804 including the electron emitting portion include Pt, Pd, Ru, Ag, Au and T.
i, In, Cr, Fe, Zn, Sn, Ta, W, Pb and other metals, PdO, SnO ₂ , In ₂ O ₃ , PbO, Sb
₂ O _{3 and} other oxides, HfB ₂ , ZrB ₂ , LaB ₆ , C
Borides of eB ₆ , YB ₄ , GdB _4, etc., TiC, Zr
Carbides such as C, HfC, TaC, SiC, WC, Ti
There are nitrides such as N, ZrN and HfN, semiconductors such as Si and Ge, carbon, AgMg and NiCu.

The thin film 804 including the electron emitting portion is formed by a vacuum vapor deposition method, a sputtering method, a chemical vapor deposition method, a dispersion coating method, a dipping method, a spinner method or the like.

The present applicants also proposed an electron source and an image forming apparatus using the surface conduction electron-emitting device (U).
SP5068663). FIG. 9 is a perspective view of an image forming apparatus in which the surface conduction electron-emitting device is arranged. Board 90
Each of the plurality of electron-emitting devices provided on 1 is connected in parallel to two wirings, for example, Dr 2 and Dl 2.
A modulation electrode 906 having an electron passage hole 905 is arranged above the substrate on which the electron-emitting device 904 is formed so as to be orthogonal to the wiring 903 of the electron-emitting device.

FIG. 10 is a sectional view of the image forming apparatus. Here, 901 is a substrate, 1002 is a device electrode, 10
13 is a wiring, 1005 is an insulating film, 906 is a modulation electrode, 9
Reference numeral 05 represents an electron passage hole, and 1003 represents a thin film including an electron emission portion.

Next, an outline of the manufacturing process of the surface conduction electron-emitting device substrate will be described below with reference to FIG.

Step-a A resist pattern 1117 is formed on the substrate 901 by a photolithography technique, and a device electrode 1118 is formed. As the element electrode material, any material having conductivity can be used.

Step-b The unnecessary portion of the device electrode material is removed by lift-off.

Step-c A layer 1119 serving as a mask is laminated and patterned on the electrode 1118, and an electron emission portion forming thin film 1104 is formed thereon.

Step-d Electron emitting portion forming thin film 1104
A thin film 1003 including an electron emitting portion is formed by removing unnecessary portions by lift-off.

Step-e The wiring 903 is formed by a vacuum evaporation technique and a photolithography technique. Any wiring material may be used as long as it is usually used as an electrode material.

Step-f The insulating film 1105 for supporting the modulation electrode is formed, and the modulation electrode 906 is formed by the vacuum evaporation technique.

Step-g Insulating layer 1105, modulation electrode 90
6 by photolithography technology and etching technology
The unnecessary portion is removed to expose the thin film 1003 including the electron emitting portion.

[0026]

However, an image of an electron source provided with a plurality of surface conduction electron-emitting devices proposed by the present applicant and an image of the display device or the like in which a phosphor is arranged at a position facing the electron source. Also in the forming apparatus (FIG. 9), the grid is provided in the direction (column-direction wiring) orthogonal to the wiring (row-direction wiring) of the elements in which a large number of elements are arranged in parallel in order to select the element that emits electrons. Is an essential electron source, and is not an electron source that can easily select an element that emits electrons and control the electron emission amount with a simple configuration. Also,
A grid is indispensable in order to make the phosphor arranged at a position facing the electron source emit light with selectively controlled brightness, and an element that emits electrons can be easily selected with a simple structure. However, it is not an image forming apparatus such as a display device that can control the electron emission amount and the brightness of the phosphor.

[0027]

According to the present invention for solving the above problems, m number of row-direction wirings and n number of column-direction wirings (where m and n are natural numbers and may be the same or different). ), And a surface conduction electron-emitting device having a thin film including a device electrode and an electron emitting portion and connected to the row-direction wiring and the column-direction wiring on a substrate. , The row-direction wirings and the column-direction wirings have an intersection with an insulating film interposed, and at least one of the wirings at the intersection has a film thickness smaller than that of the wiring other than the intersection. In the characteristic surface conduction electron-emitting device substrate, the total film thickness of the wiring at the intersection and the insulating film is 0.7 to 1. 3 times, and at least the wiring in the row direction at the intersection Comprising at least a portion of a part and the column direction wirings are disposed between the insulating film and the substrate.

The present invention is also a plane type image forming apparatus incorporating the above surface conduction electron-emitting device substrate.

Furthermore, the present invention includes m row-direction wirings and n column-direction wirings (where m and n are natural numbers, which may be the same or different), a device electrode and an electron emitting portion. In a method of manufacturing a surface conduction electron-emitting device substrate, which comprises a thin film and a surface conduction electron-emitting device connected to the row-direction wiring and the column-direction wiring on a substrate, the row-direction wiring and the column direction are provided. A surface conduction electron-emitting device substrate including a step of previously forming a part of the column-direction wiring or a part of the row-direction wiring in a portion where the row-direction wiring or the column-direction wiring other than the intersection of the wiring is formed. Is a manufacturing method.

By configuring the element substrate of the present invention as described above, a grid electrode is not required, the above problems associated with the grid electrode are solved, and the manufacturing method is simplified.
It is possible to provide an electron-emitting device that is inexpensive and has a simple structure, reduce the height difference between wiring surface positions, and suppress pattern defects due to steps in the manufacturing process.

By disposing at least a part of the row-direction wiring and at least a part of the column-direction wiring at the intersection between the insulating film and the substrate, disconnection of the wiring at the end of the insulating film can be suppressed and the yield can be improved. Is improved. Alternatively,
Since the total film thickness of the wiring at the intersection and the film thickness of the insulating film is substantially equal to the film thickness of the wiring other than the intersection, disconnection of the wiring at the end of the insulating film can be suppressed. Further, by forming a flat image forming apparatus using the above-mentioned surface conduction electron-emitting device, it is possible to provide a flat image forming apparatus having an inexpensive and simple structure.

Further, according to the method of the present invention, it is possible to provide an easy manufacturing method capable of suppressing the decrease in yield due to the grid electrode and suppressing the disconnection defect of the wiring.

An embodiment of the image forming apparatus according to the present invention will be described below. FIG. 1 shows a wiring configuration diagram of a matrix wiring substrate, and FIG. 2 shows a configuration diagram of an image forming apparatus.

In FIG. 1, 101 is quartz glass, glass with a reduced content of impurities such as Na, soda lime glass, and Si.
An insulating substrate such as a glass plate such as a blue plate laminated with O ₂ and a ceramics substrate such as alumina, 102 is N
i, Cr, Au, Mo, W, Pt, Ti, Al, Cu,
Metals or alloys such as Pd and Pd, Ag, Au,
A printed conductor composed of a metal such as RuO ₂ , Pd-Ag or a metal oxide and glass, In ₂ O ₃ -Sn
A column-directional wiring made of a material having a sufficiently low resistance such as a transparent conductor such as O ₂ and a semiconductor conductor material such as a semiconductor material such as polysilicon, 103 is a row-directional wiring made of a material having a sufficiently low resistance like the wiring 102, 104 Is an insulator material.

In FIG. 2, reference numeral 201 denotes a rear plate on which a matrix wiring board 200 having surface conduction electron-emitting devices is fixed. Here, since the rear plate is provided for the purpose of reinforcing the matrix wiring board, it is unnecessary when the matrix wiring board has sufficient strength. Further, 202 is a support frame, 203 is a phosphor,
Reference numeral 204 is a face plate.

Here, the wiring structure is not limited to the shape shown in FIG. 1, but the insulating material 3 as shown in FIG.
The entire width of the column-direction wiring 302 and a part of the supplementary wiring 302a connected to the row-direction wiring 303 may be arranged between 04 and the substrate 301. Also, FIG.
As shown in FIG. 2, the wiring arranged on the substrate side (the wiring 1202 in the present embodiment) may have a structure having a smaller film thickness than the supplementary wiring 1203a integrated with the wiring 1202 at the intersection. . Further, the structure may be such that both wirings have a thin film thickness at the intersection.

However, the total film thickness of the wiring and the insulating film at the intersection is 0.7 to 1.3 times the film thickness of the wiring other than the intersection. preferable.

[0038]

【Example】

[Embodiment 1] A first embodiment of a surface conduction electron-emitting device according to the present invention and an image forming apparatus using the same will be described.

FIG. 4 is a process drawing of the surface conduction electron-emitting device according to this embodiment. Step a On a substrate 401 in which a 0.5 μm-thick silicon oxide film was formed on a cleaned soda-lime glass by a sputtering method, Cr with a thickness of 50, Au with a thickness of 6000, and Cr with a thickness of 300 Å were deposited by vacuum deposition. After stacking sequentially, photoresist (AZ
1370 Hoechst) is spin coated by spinner,
After baking, the photomask image is exposed and developed to form a resist pattern of the column-direction wiring 402, and the Au / Cr deposited film is wet-etched to form the lower wiring 4 having a desired shape.
02 was formed. Step b After that, a desired pattern is formed on the photoresist (RD-200
0N-41 (manufactured by Hitachi Chemical Co., Ltd.) was formed, and Cr having a thickness of 50 Å and Au having a thickness of 10000 Å were sequentially deposited by a vacuum vapor deposition method. Dissolve the photoresist pattern with an organic solvent,
The Au / Cr deposited film is lifted off and the supplementary wiring 40 in the row direction is formed.
Formed 3. Step c Silicon oxide film as an interlayer insulating layer is 10000Å, RF
The photoresist film is deposited by sputtering, a photoresist pattern is formed at a desired position, this is masked and etched to remove an unnecessary portion of the silicon oxide film, and an insulating film 40 having a desired shape is formed.
4 was formed. The etching is RIE (Reactive Ion Etching) using CF ₄ and H ₂ gas.
According to the law. Step d After that, a desired pattern is formed on the photoresist (RD-200).
0N-41 (manufactured by Hitachi Chemical Co., Ltd.) was formed, and Cr having a thickness of 50Å and Au having a thickness of 3000Å were sequentially deposited by a vacuum vapor deposition method. Dissolve the photoresist pattern with an organic solvent, and
The u / Cr deposited film was lifted off to form the row wiring 405. Step e After that, a pattern having a gap between the device electrodes and device electrodes was formed with a photoresist (RD-2000N-41 manufactured by Hitachi Chemical Co., Ltd.), and Ti having a thickness of 50Å and Ni having a thickness of 1000Å were sequentially deposited by a vacuum evaporation method. The photoresist pattern is dissolved in an organic solvent, the Ni / Ti deposition film is lifted off, the device electrode interval L1 is set to 3 μm, and the device electrode width is set to 3
A device electrode 406 having a thickness of 00 μm was formed.

Then, a C film having a film thickness of 1000Å is formed into a desired shape.
The r film was deposited and patterned by vacuum evaporation, and organic Pd (ccp4230 manufactured by Okuno Chemical Industries Co., Ltd.) was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes. Further, P is the main element formed in this way.
The film thickness of the electron-emitting-portion-forming thin film made of fine particles of d was 100Å, and the sheet resistance value was 5 × 10 ⁴ Ω / □. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state in which the fine particles are individually dispersed and arranged but also in a state in which the fine particles are adjacent to each other or overlap each other (also in an island shape). (Including)
The particle diameter means the diameter of fine particles whose particle shape can be recognized in the above state. Next, the Cr film and the electron emission part forming thin film after firing were etched with an acid etchant to form an electron emission part forming thin film 407.

An electron-emitting device was formed as described above. As a result of the fact that the height difference of the wiring surface position of the electron-emitting device thus created was alleviated by the supplementary wiring 403, the unevenness due to the film thickness in the column direction alone was suppressed, and the unevenness due to the insulating film was suppressed. Further, since the grid is not used, the manufacturing method is simplified, and even if a large-area electron-emitting device is manufactured, an extremely low yield does not occur. Further, the cost can be reduced by simplifying the manufacturing process. Further, disconnection of the row-direction wiring due to the insulating film step portion was suppressed, and the yield was improved.

Next, an example in which a display device is configured using the electron source created as described above will be described with reference to FIGS. 13 and 14.

The substrate 1311 on which a large number of plane type surface conduction electron-emitting devices are manufactured as described above is used as the rear plate 13.
After being fixed on 01, the face plate 1306 (which is formed by forming the fluorescent film 1304 and the metal back 1305 on the inner surface of the glass substrate 1303) is arranged 5 mm above the substrate 1311 via the support frame 1302, and the face plate 1306, support frame 1302, rear plate 130
Frit glass was applied to the joint portion 1 and baked at 400 ° C. to 500 ° C. for 10 minutes or more in the air or in a nitrogen atmosphere for sealing. The frit glass was also used to fix the substrate 1311 to the rear plate 1301.

In FIG. 13, 1312 is an electron-emitting device, and 1313 and 1314 are wirings in the column and row directions, respectively.

In the case of monochrome, the fluorescent film 1304 may consist of only the fluorescent material, but in this embodiment, the fluorescent material has a stripe shape, and a black stripe is formed first, and the fluorescent material of each color is provided in the gap. Is applied, and the fluorescent film 13 is applied.
04 was produced. As a material for the black stripe, a material containing graphite as a main component, which is often used, was used.

A slurry method was used as a method for applying the phosphor to the glass substrate 1303.

Further, a metal back 1305 is usually provided on the inner surface side of the fluorescent film 1304. The metal back was manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after manufacturing the fluorescent film, and then vacuum-depositing Al.

The face plate 1306 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 1304 in order to further enhance the conductivity of the fluorescent film 1304.
In this example, since sufficient conductivity was obtained only with the metal back, it was omitted.

In the case of the above-mentioned sealing, in the case of a color, the phosphors of the respective colors and the electron-emitting devices have to correspond to each other, so that sufficient alignment is performed.

The atmosphere in the glass container completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the terminals outside the container Dxol or Doxm and Doyl or Doyn. A voltage is applied between the electrodes 1313 and 1314 of the electron-emitting device 1312 through the through-hole, and the electron-emitting portion is formed by energizing (forming) the thin film for forming the electron-emitting portion. FIG. 14 shows the voltage waveform of the forming process.

In FIG. 14, T1 and T2 are the pulse width and the pulse interval of the voltage waveform. In this embodiment, T1 is 1 ms and T2 is 10 ms, and the peak value of the triangular wave (peak voltage during forming). Was 5 V and the forming treatment was performed for 60 seconds in a vacuum atmosphere of about 1 × 10 ⁻⁶ torr.

In the electron-emitting portion thus produced, fine particles containing palladium element as a main component were dispersed and arranged, and the average flow diameter of the fine particles was 30Å.

Forming was performed to form an electron emitting portion, and an electron emitting device was manufactured.

Next, at a vacuum degree of about 10 ^-6 torr, an unillustrated exhaust pipe was heated by a gas burner to weld and seal the envelope. Finally, a getter process was performed in order to maintain the degree of vacuum after sealing. Immediately before sealing, a getter placed at a predetermined position (not shown) in the image forming apparatus was heated by a heating method such as high-frequency heating to form a vapor deposition film. The getter was mainly composed of Ba or the like.

In the image display device of the present invention completed as described above, the scanning signal and the modulation signal are respectively supplied to the respective electron-emitting devices from the signal generating means (not shown) through the terminals Dxl to Dxm and Dyl to Dyn outside the container. , Is applied to cause electrons to be emitted, and a high voltage of several kV or more is applied to the metal back 1305 through the high voltage terminal Hv to accelerate the electron beam, collide with the fluorescent film 1304, and cause excitation / light emission to display an image. did. [Embodiment 2] A second embodiment of the surface conduction electron-emitting device according to the present invention will be described.

FIG. 5 is a process diagram of the surface conduction electron-emitting device according to this embodiment. Step a On a substrate 501 in which a 0.5 μm-thick silicon oxide film is formed on a cleaned soda-lime glass by a sputtering method, 50 Å of Cr, 10000 Å of Au in thickness, and 300 Å of Cr in thickness are deposited by vacuum evaporation. After sequentially stacking, photoresist (A
(Z1370 Hoechst Co., Ltd.) is spin coated by a spinner and baked, and then a photomask image is exposed and developed to form a resist pattern of a part 502 of the column direction wiring and the row direction wiring, and the Cr / Au / Cr deposited film is formed. The column-direction wiring 50, which is the lower wiring of a desired shape, is wet-etched.
2 and the supplementary wiring 502a are formed. The width of the column wiring 502 was formed wider than that of the supplementary wiring 502a. Step b: Silicon oxide film as an interlayer insulating layer is 10,000 Å, RF
The photoresist pattern was deposited by sputtering, a photoresist pattern was formed at a desired position, and the silicon oxide film was removed by etching using this as a mask to form an interlayer insulating film 503 having a desired shape. The etching is performed by RIE (Reactive Ion Etchi) using CF ₄ and H ₂ gas.
ng) method. Step c After that, a desired pattern is formed on the photoresist (RD-200
0N-41 (manufactured by Hitachi Chemical Co., Ltd.) was formed, and Cr having a thickness of 50Å and Au having a thickness of 3000Å were sequentially deposited by a vacuum vapor deposition method. Dissolve the photoresist pattern with an organic solvent, and
The u / Cr deposited film was lifted off, and the row wiring 504 was formed. Step d After that, a pattern having a gap between the device electrodes and device electrodes was formed with a photoresist (RD-2000N-41 manufactured by Hitachi Chemical Co., Ltd.), and Ti having a thickness of 50Å and Ni having a thickness of 1000Å were sequentially deposited by a vacuum evaporation method. The photoresist pattern is dissolved in an organic solvent, the Ni / Ti deposition film is lifted off, the device electrode interval L1 is set to 3 μm, and the device electrode width W is set.
A device electrode 505 having a thickness of 1 as 300 μm was formed.

After that, a C film having a film thickness of 1000Å was formed into a desired shape.
The r film was deposited and patterned by vacuum evaporation, and organic Pd (ccp4230 manufactured by Okuno Chemical Industries Co., Ltd.) was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes. In addition, the film thickness of the electron emission portion forming thin film formed of fine particles of Pd as the main element thus formed was 100Å, and the sheet resistance value was 5 × 10 ⁴ Ω / □. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state in which the fine particles are individually dispersed and arranged but also in a state in which the fine particles are adjacent to each other or overlap each other (also in an island shape). (Including)
The particle diameter means the diameter of fine particles whose particle shape can be recognized in the above state. Next, the Cr film and the thin film for forming the electron emitting portion after firing are etched with an acid etchant, and the thin film for forming the electron emitting portion is subjected to an electric current treatment (forming).
By doing so, a thin film 506 including an electron emitting portion having a desired pattern was formed.

An electron-emitting device was formed as described above. The height difference of the position of the wiring surface of the electron-emitting device thus manufactured was suppressed to the unevenness only in the insulating film thickness, and the unevenness due to the column-direction wiring could be suppressed. Moreover, since the grid is not used, the yield does not extremely decrease even if a large-area electron-emitting device is manufactured. Further, the cost can be reduced by simplifying the manufacturing process. Further, the deposited film thickness of the wiring in the step (d) could be reduced without changing the resistance of the wiring in the row direction. This is because the wiring resistance is reduced by the supplementary wiring 502a. [Embodiment 3] A third embodiment of the surface conduction electron-emitting device according to the present invention will be described.

FIG. 6 is a process diagram of the surface conduction electron-emitting device according to this embodiment. Step a On a substrate 601 having a 0.5 μm-thick silicon oxide film formed on a cleaned soda-lime glass by a sputtering method, 50 Å of Cr, 10000 Å of Au, and 300 Å of Cr are deposited by vacuum evaporation. The layers were sequentially laminated. Photoresist (AZ
1370 Hoechst) is spin coated by spinner,
After baking, the photomask image is exposed and developed to form a resist pattern of a part of the column-direction wiring 602 and the row-direction wiring, and the Cr / Au / Cr deposited film is wet-etched to form a desired shape in the column direction. Wiring 602 and supplementary wiring 6
02a was formed. Step b A silicon oxide film of 3000 Å is deposited as an interlayer insulating layer by RF sputtering, a photoresist pattern is formed at a desired position, and the silicon oxide film of an unnecessary portion is removed by etching using this as a mask to form an interlayer insulating film of a desired shape. 603 was formed. The etching is performed by RIE (Reactive Ion Etchin) using CF ₄ and H ₂ gas.
g) According to the method. Step c After that, a desired pattern is formed on the photoresist (RD-200
0N-41 (manufactured by Hitachi Chemical Co., Ltd.) was formed, and Cr having a thickness of 50 Å and Au having a thickness of 10000 Å were sequentially deposited by a vacuum vapor deposition method. Dissolve the photoresist pattern with an organic solvent,
The Au / Cr deposited film is lifted off, and the row wiring 604,
A part of the column direction wiring, that is, the supplementary wiring 604a is formed. Step d After that, a pattern having a gap between the device electrodes and device electrodes was formed with a photoresist (RD-2000N-41 manufactured by Hitachi Chemical Co., Ltd.), and Ti having a thickness of 50Å and Ni having a thickness of 1000Å were sequentially deposited by a vacuum evaporation method. The photoresist pattern is dissolved in an organic solvent, the Ni / Ti deposition film is lifted off, the device electrode interval L1 is set to 3 μm, and the device electrode width W is set.
A device electrode 605 having a thickness of 1 as 300 μm was formed.

After that, a C film having a film thickness of 1000Å is formed into a desired shape.
The r film was deposited and patterned by vacuum evaporation, and organic Pd (ccp4230 manufactured by Okuno Chemical Industries Co., Ltd.) was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes. In addition, the film thickness of the electron emission portion forming thin film formed of fine particles of Pd as the main element thus formed was 100Å, and the sheet resistance value was 5 × 10 ⁴ Ω / □. The fine particle film described here is a film in which a plurality of fine particles are aggregated, and its fine structure is not only in a state in which the fine particles are individually dispersed and arranged but also in a state in which the fine particles are adjacent to each other or overlap each other (also in an island shape). (Including)
The particle diameter means the diameter of fine particles whose particle shape can be recognized in the above state. Next, the Cr film and the thin film for forming the electron emitting portion after firing are etched with an acid etchant, and the thin film for forming the electron emitting portion is subjected to an electric current treatment (forming).
By doing so, a thin film 606 including an electron emitting portion having a desired pattern was formed.

An electron-emitting device was formed as described above. The height difference of the position on the wiring surface of the electron-emitting device thus manufactured was suppressed by the unevenness of the insulating film. Also,
Since the grid is not used, the yield does not extremely decrease even if a large-area electron-emitting device is manufactured. further,
The cost can be reduced by simplifying the manufacturing process. Also,
It was possible to reduce the deposited film thickness of the wiring in the step (a) without changing the resistance of the wiring in the column direction.

[0062]

According to the present invention, the following effects can be confirmed.

1) Since the grid is not used, the electron-emitting device manufacturing process is facilitated, the manufacturing cost can be reduced, and the yield can be improved.

2) The height difference of the wiring surface position is suppressed, and the device electrodes and electron-emitting devices are easily formed.

3) It is possible to reduce the film thickness of the wiring deposited at one time without increasing the wiring resistance and without changing the number of times of forming the wiring. Therefore, the manufacturing cost can be reduced.

4) It is possible to reduce defects due to disconnection of wiring.

[Brief description of drawings]

FIG. 1 is a schematic explanatory diagram for explaining a configuration of an electron-emitting device substrate of the present invention.

FIG. 2 is an exploded perspective view for explaining the configuration of the image forming apparatus of the present invention.

FIG. 3 is a schematic explanatory diagram for explaining another configuration of the electron-emitting device substrate of the present invention.

FIG. 4 is a manufacturing process diagram showing a first embodiment of the electron-emitting device substrate of the present invention.

FIG. 5 is a manufacturing process diagram showing a second embodiment of the electron-emitting device substrate of the present invention.

FIG. 6 is a manufacturing process diagram showing a third embodiment of the electron-emitting device substrate of the present invention.

FIG. 7 is a plan view showing a configuration of a conventional electron-emitting device.

FIG. 8 is a plan view and b is a side view showing the structure of a conventional electron-emitting device.

FIG. 9 is a partially cutaway perspective view of a conventional image forming apparatus.

10 is a side sectional view of the image forming apparatus of FIG.

11 is a manufacturing process diagram of an electron-emitting device substrate of the image forming apparatus of FIG.

FIG. 12 is a schematic explanatory diagram for explaining another configuration of the electron-emitting device substrate of the present invention.

FIG. 13 is a partially cutaway perspective view showing an example of the image forming apparatus of the present invention.

FIG. 14 is a graph showing a forming voltage waveform.

[Explanation of symbols]

101 Insulating Substrate 102 Column Direction Wiring 103 Row Direction Wiring 104 Insulation Material 201 Rear Plate 202 Support Frame 203 Phosphor 204 Face Plate 301 Substrate 302 Column Direction Wiring 303 Row Direction Wiring 304 Insulation Material 401 Substrate 402 Column Direction Wiring 403 Supplementary Wiring 404 Insulating film 405 Row direction wiring 406 Element electrode 407 Electron emission part forming thin film 501 Substrate 502 Column direction wiring 502a Replenishment wiring 503 Insulation film 504 Row direction wiring 505 Element electrode 506 Thin film including electron emission section 601 Substrate 602 Column direction wiring 602a Replenishment Wiring 603 Insulating film 604 Row-direction wiring 604a Replenishing wiring 606 Thin film including electron emitting portion 701 Insulating substrate 703 Electron emitting portion 704 Thin film including electron emitting portion 705 Thin film including electron emitting portion 706 Electron emitting portion included Thin film 801 Insulating substrate 803 Electron emitting portion 804 Thin film including electron emitting portion 805 Device electrode 806 Device electrode 901 Substrate 902 Rear plate 903 Wiring 904 Electron emitting device 905 Electron passing hole 906 Modulation electrode 907 Transparent substrate 908 Fluorescent substance 909 Metal back 910 Face plate 911 Support frame 912 Image forming apparatus 1002 Element electrode 1003 Thin film including electron emitting portion 1005 Insulating film 1010 Glass frit 1013 Wiring 1104 Electron emitting portion forming thin film 1105 Insulating layer 1117 Resist 1118 Element electrode 1201 Insulating substrate 1202 First substrate Wiring 1203 Second wiring 1204 Insulating material 1301 Substrate on which a planar surface conduction electron-emitting device is manufactured 1302 Support frame 1303 Glass substrate 1304 Fluorescent film 1305 Metal bar Click 1306 faceplate 1308 image forming apparatus 1311 substrate 1312 electron-emitting devices 1313 column wirings 1314 rows directional wirings

Claims (5)

[Claims] 1. A wiring having m row-direction wirings and n column-direction wirings (where m and n are natural numbers and may be the same or different), and a thin film including a device electrode and an electron-emitting portion. In a surface-conduction type electron-emitting device substrate in which a surface-conduction type electron-emitting device connected to the row-direction wiring and the column-direction wiring is formed on a substrate, the row-direction wiring and the column-direction wiring are insulating films. A surface-conduction electron-emitting device substrate having an intersecting portion, and the film thickness of at least one of the wirings at the intersecting portion is thinner than the film thickness of the wiring other than the intersecting portion. 2. The total film thickness of the wiring at the intersection and the insulating film is 0.7 to 1.3 times the film thickness of the wiring other than at the intersection. The surface-conduction type electron-emitting device substrate according to. 3. The surface conduction electron-emitting device according to claim 1, wherein at least a part of the row-direction wiring and at least a part of the column-direction wiring at the intersection are arranged between the insulating film and the substrate. substrate. 4. A flat-type image forming apparatus comprising the surface conduction electron-emitting device substrate according to claim 1 incorporated therein. 5. A wiring having m row-direction wirings and n column-direction wirings (where m and n are natural numbers and may be the same or different), and a thin film including a device electrode and an electron-emitting portion. In a method of manufacturing a surface-conduction electron-emitting device substrate, comprising a surface-conduction electron-emitting device connected to the row-direction wiring and the column-direction wiring on a substrate, the intersection of the row-direction wiring and the column-direction wiring is provided. A method of manufacturing a surface-conduction type electron-emitting device substrate, characterized by including a step of previously forming a part of the column-direction wiring or a part of the row-direction wiring in a portion where row-direction wiring or column-direction wiring other than .