JPH088187A - Semiconductor device manufacturing equipment - Google Patents

Abstract

(57) [Abstract] [Purpose] By forming a minute ion beam,
Provided is a semiconductor device manufacturing apparatus capable of improving the formation rate of a fine crystal pattern and the growth rate of crystal ions. Ions ionized and emitted from the semiconductor crystal material by the ion source 11 are emitted by the first electron lens 13a.
And the desired ions are selected by the mass filter 14 and then refocused by the second electron lens 13b.
It becomes a focused ion beam and is deflected by the deflecting means 15 in accordance with a required circuit pattern. The defocused electrode 16 deflects the focused ion beam from 100 eV to 200 eV.
The energy is reduced to eV, and a fine crystal pattern is grown and formed on the semiconductor substrate m.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a semiconductor substrate (hereinafter simply referred to as a substrate).
TECHNICAL FIELD The present invention relates to a technique for growing and forming a semiconductor crystal thereon.

[0002]

2. Description of the Related Art Conventionally, there are various methods for growing and forming a semiconductor crystal on a substrate, for example, CV is generally used.
The D (chemical vapor deposition) method is widely used. According to this CVD method, a semiconductor crystal can be formed on the entire substrate. However, if there is a demand to lower the growth temperature or partially form a crystal pattern, the following ion vapor deposition method is used.

This is because the crystalline material is ionized, accelerated, and decelerated near the surface of the substrate for irradiation.
Crystal ions are vapor-deposited on the surface of a substrate to form a crystal film, and an ion vapor deposition apparatus as shown in the simplified diagram of FIG. 2 is used.

In the figure, reference numeral 1 is a vacuum chamber, and 2 is an ion source for ionizing a crystal material (for example, silicon). A gas containing silicon is introduced and plasmaized in a high-frequency electric field to generate silicon ions. Is generated. The ions generated by the ion source 2 are extracted by the extraction electrode 3 to become the ion beam B,
It passes through the mass separator 4. The mass separator 4 is a kind of electromagnet, which guides only required ions to the beam passage and deflects other ions to the outside of the beam passage. The required ions that have passed through the mass separator 4 are introduced into the growth chamber 6, the irradiation destination is adjusted by the deflection electrode 5, the speed is reduced by the deceleration electrode 7, and the ions are deposited on the surface of the substrate m to grow crystals.

[0005]

However, when a semiconductor crystal is formed using the above-mentioned ion beam vapor deposition apparatus, there are the following problems.

The ion extraction port of the ion source 2 of the conventional apparatus has a certain size and is not equipped with an electron lens for focusing the ion beam B. B was a relatively wide beam. Therefore, it is very difficult to form a fine crystal pattern (for example, a crystal pattern of several μm) on the substrate m.

Further, since the ion beam B is wide and divergent, the ion current density is also relatively small, which slows down the growth rate of the crystal ions deposited on the surface of the substrate m. Therefore, the residual gas in the growth chamber 6 is easily affected, and the film quality is deteriorated.

The present invention has been made in view of such circumstances, and by forming a minute ion beam, it is possible to improve the formation of a fine crystal pattern and the growth rate of crystal ions. An object is to provide an element manufacturing apparatus.

[0009]

The present invention has the following structure in order to achieve the above object.

That is, the semiconductor element manufacturing apparatus according to the present invention comprises a liquid metal ion source made of a semiconductor crystal material as a raw material,
An electron lens that focuses ions emitted from the liquid metal ion source to form a minute focused ion beam, an accelerating unit that accelerates the focused ion beam toward a semiconductor substrate that is an object to be processed, and accelerated focusing Deflection means for adjusting the deflection of the irradiation destination of the ion beam on the semiconductor substrate,
And a deceleration means for decelerating the focused ion beam to an energy of 100 eV to 200 eV to grow a semiconductor crystal pattern on the semiconductor substrate.

[0011]

According to the present invention, the ion source ionizes the semiconductor crystal material and emits the ions. The ejected ions are focused by an electron lens to form a minute focused ion beam. The focused ion beam is accelerated toward the semiconductor substrate by the accelerating means, and the deflecting means deflects the irradiation destination of the focused ion beam according to a required circuit pattern. Focused ion beam that is accelerated and oriented is
The deceleration means decelerates to a predetermined energy, and a fine crystal pattern grows on the semiconductor substrate.

[0012]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing the outline of the configuration of an embodiment of the semiconductor device manufacturing apparatus of the present invention.

This semiconductor element manufacturing apparatus is an apparatus for forming a semiconductor element by growing a fine crystal pattern on the surface of the substrate m.

In the figure, reference numeral 10 is a vacuum chamber, which is the main casing of this apparatus.
The following components are installed inside.

Reference numeral 11 denotes a liquid metal ion source for generating ions, which is formed as a melting furnace for melting and liquefying a semiconductor crystal material (eg, silicon or germanium). A needle 25 is provided at the sharp tip of the ion source 11 (the tip on the lower side of the drawing), and the molten liquid material is supplied to the tip of the needle 25. . The ion source 11 is connected to an accelerating power source 23 as an accelerating means for applying accelerating energy to the ions by the potential difference. The heater that heats the ion source 11 is
Illustration is omitted. Reference numeral 12 is an extraction electrode for extracting ionized fine particles from the ion source 11, and a extraction power source 22 is provided between the extraction electrode 12 and the ion source 11.
Is connected. 13a is a first electron lens for focusing the ion beam B, 14 is a mass filter for selecting only desired metal ions, 13b is a second electron lens,
The first electronic lens 13a and the second electronic lens 13b correspond to the electronic lens of the present invention. Reference numeral 15 is a deflection electrode for deflecting the irradiation destination of the focused ion beam B, and the deflection voltage control unit 26 connected to this deflects the focused ion beam B for deflection adjustment. Reference numeral 16 is a deceleration electrode that decelerates the acceleration energy of the ion beam B to weaken its velocity, and a deceleration power supply 24 is connected between the deceleration electrode 16 and the stage 17 on which the substrate m is placed. The deceleration power supply 24 and the deceleration electrode 16 correspond to the deceleration means of the present invention.

The stage 17 is installed on an XY stage 20 which is movable in the X and Y directions (the horizontal direction in the drawing and the direction orthogonal thereto), and a drive motor for driving the XY stage 20. 21 is provided outside the vacuum chamber 10. The stage movement control unit 27 controls the drive of the drive motor 21 to move the stage 17. A communication pipe 18 is provided below the vacuum chamber 10 (downward in the drawing), and a vacuum pump 19 is connected to an end of the communication pipe 18.

Next, the operation of the above-mentioned device will be described.

First, when a semiconductor crystal material (for example, silicon or germanium) is placed in the ion source 11 and the ion source 11 is heated, the crystal material is melted and liquefied and supplied to the tip of the needle 25. To be done. With the temperature of the ion source 11 kept at the melting point, the extraction power source 22
A potential difference of about 7 to 8 [kV] is applied between the lead electrode 12 and the extraction electrode 12, that is, to the tip of the needle 25 covered with the liquid material. When the electric field applied to the surface of the liquid material reaches the evaporation field strength of the liquid material, the ionized fine particles start to be released.
The fine particles extracted from the ion source 11 are accelerated toward the surface of the substrate m by the potential difference of 30 to 50 [kV] given from the acceleration power source 23, are focused by the first electron lens 13a, and are focused by the focused ion beam. B, and the ions are selected by the mass filter 14 at this stage.

In general, it is possible to lower the melting point by melting a plurality of crystal materials rather than by melting only a single crystal. May form fine particles. In this case, it is necessary to pass only the desired fine particles through the regular beam passage and to deflect the other fine particles out of the beam passage to select the fine particles. The operation is performed by the mass filter 14. The mass filter 14 is like a kind of deflection electrode, and deflects particles other than the necessary particles out of the beam passage so that only the required particle beam passes through the beam passage.

The focused ion beam B that has passed through the mass filter 14 is refocused by the second electron lens 13b, and has a desired crystal pattern by the deflection electrode 15 controlled by the deflection voltage controller 26. Its orientation is adjusted.

The focused ion beam B whose direction is adjusted is
When passing through the deceleration electrode 16, it is decelerated to a predetermined energy and reaches the surface of the substrate m. The energy of the focused ion beam B at this time is equal to the acceleration power supply 23 and the deceleration power supply 24.
It becomes equal to the output voltage difference between and. That is, the focused ion beam B is accelerated by the acceleration power source 23 until it approaches the deceleration electrode 16.
It has the acceleration energy given by
When the potential of the stage 17 is raised by the deceleration power supply 24, the focused ion beam B incident on the substrate m is decelerated by that amount. Therefore, in principle, the energy of the focused ion beam B can be continuously changed between 0 and the output voltage value of the acceleration power supply 23 by adjusting the output of the deceleration power supply 24. Therefore, the focused ion beam B is vapor-deposited on the substrate m by adjusting the output value of the deceleration power supply 24 so that the focused ion beam B is not hit into the substrate m, and the crystal pattern is grown. Specifically, it is possible by adjusting the potential difference between the deceleration electrode 16 and the stage 17 to be 100 to 200 [V]. That is, the acceleration power supply 23 and the deceleration power supply
The output voltage difference from 24 is 100 to 200 [V], and the energy of the focused ion beam is 100 to 200 [V], which is the difference between these output voltages.
It will be decelerated to 200 [V].

In the above description, when the desired crystal pattern is drawn by the focused ion beam B, the irradiation destination is adjusted by the deflection electrode 15, but when the drawing range of the crystal pattern extends to a wide range, All the circuit patterns are drawn due to the deflection limit of the deflection electrode 15 (if the degree of deflection is increased, the beam width of the focused ion beam B is increased and a fine crystal pattern cannot be formed, so the deflection range is limited). It may not be cut. In such a case, a control signal is sent from the stage movement control unit 27 to the drive motor 21.
By moving the XY stage 20,
The substrate m is moved together with the stage 17, and the substrate m is positioned within the deflection range of the deflection electrode 15.

[0024]

As is apparent from the above description, in the semiconductor manufacturing apparatus according to the present invention, the ions extracted from the ion source using the semiconductor crystal material as the raw material are focused by the electron lens to generate a minute focused ion beam. Since the crystal pattern is formed and vapor-deposited on the semiconductor substrate by using this minute focused ion beam, the fine crystal pattern can be easily formed.

Further, since the minute focused ion beam is used, the crystal growth rate is improved and the influence of the residual gas is less likely to occur, so that a semiconductor element having a good quality crystal pattern can be manufactured.

[Brief description of drawings]

FIG. 1 is a sectional view showing a schematic configuration of an apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a schematic configuration of a conventional device.

[Explanation of symbols]

 11 ... Ion source 13a ... First electron lens 13b ... Second electron lens 15 ... Deflection electrode 16 ... Deceleration electrode 23 ... Acceleration power supply 24 ... Deceleration power supply

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masahiro Ueda No. 1 Kuwabara-cho, Nishinokyo, Nakagyo-ku, Kyoto Incorporated Shimadzu Sanjo Factory

Claims (1)

[Claims] 1. A liquid metal ion source using a semiconductor crystal material as a raw material, an electron lens for focusing ions emitted from the liquid metal ion source to form a minute focused ion beam, and the focused ion beam. Accelerating means for accelerating toward the semiconductor substrate that is the object to be processed, deflecting means for adjusting the irradiation destination of the accelerated focused ion beam on the semiconductor substrate, and decelerating the focused ion beam to 100 eV to 200 eV energy, A device for manufacturing a semiconductor device, comprising: a moderator for growing a semiconductor crystal pattern on the semiconductor substrate.