JPH0885861A - Method of oxidizing the surface of an object to be treated or a substance on the surface under reduced pressure - Google Patents

Method of oxidizing the surface of an object to be treated or a substance on the surface under reduced pressure

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Publication number
JPH0885861A
JPH0885861A JP24830594A JP24830594A JPH0885861A JP H0885861 A JPH0885861 A JP H0885861A JP 24830594 A JP24830594 A JP 24830594A JP 24830594 A JP24830594 A JP 24830594A JP H0885861 A JPH0885861 A JP H0885861A
Authority
JP
Japan
Prior art keywords
substance
ozone
treated
oxygen
oxidizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24830594A
Other languages
Japanese (ja)
Other versions
JP2948110B2 (en
Inventor
Hiroshi Sugawara
寛 菅原
Ryushi Igarashi
龍志 五十嵐
Tatsumi Hiramoto
立躬 平本
Hiromitsu Matsuno
博光 松野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP24830594A priority Critical patent/JP2948110B2/en
Publication of JPH0885861A publication Critical patent/JPH0885861A/en
Application granted granted Critical
Publication of JP2948110B2 publication Critical patent/JP2948110B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】 【目的】 オゾン発生機を使用しなくても、高濃度のオ
ゾンあるいは活性酸化性分解物が得られ、したがって安
価で、処理スピードが大きく、また、光源から被処理物
体までの距離が稼げ、被処理物体表面の凹凸にも均一に
処理できる、被処理物体表面もしくは当該表面上の物質
を酸化する方法、汚染物や不要有機物を酸化除去する方
法、もしくは濡れ性を改善する方法を提供する。 【構成】 キセノンあるいはキセノンを主成分としたガ
スを封入した誘電体バリア放電ランプから放射される真
空紫外光を、減圧下で酸素または酸素を含有する流体に
照射し、光化学反応によってオゾンおよび活性酸化性分
解物を生成せしめ、このオゾンおよび活性酸化性分解物
を被処理物体表面または当該表面上の物質に接触せしめ
て、当該表面もしくは当該物質を酸化せしめる。
(57) [Abstract] [Purpose] A high concentration of ozone or active oxidative decomposition products can be obtained without using an ozone generator, so it is inexpensive, has a high processing speed, and from the light source to the object to be processed. To improve the wettability of the surface of the object to be treated, the method of oxidizing the surface of the object to be treated or the substance on the surface, the method of oxidizing and removing contaminants or unnecessary organic substances, or the wettability. Provide a way. [Structure] Oxygen or a fluid containing oxygen is irradiated under reduced pressure with vacuum ultraviolet light emitted from a dielectric barrier discharge lamp containing xenon or a gas containing xenon as a main component, and ozone and active oxidation are caused by a photochemical reaction. A oxidative decomposition product is generated, and the ozone and the active oxidative decomposition product are brought into contact with the surface of the object to be treated or a substance on the surface to oxidize the surface or the substance.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、金属や半導体表面の酸
化被膜の形成、金属表面やガラス板表面に付着した有機
化合物の汚れの除去、シリコンウエハ上の不要フォトレ
ジストのアッシング、ドライ精密洗浄、または被処理物
体表面の改質による濡れ性の改善などのための被処理物
の酸化方法に関する。
FIELD OF THE INVENTION The present invention relates to the formation of an oxide film on the surface of a metal or semiconductor, removal of stains of organic compounds adhering to the surface of a metal or glass plate, ashing of unnecessary photoresist on a silicon wafer, and precision dry cleaning. Or an oxidation method of an object to be treated for improving wettability by modifying the surface of the object to be treated.

【0002】[0002]

【従来の技術】本発明に関連した技術としては例えば、
日本国公開特許公報平2−7353号があり、そこに
は、放電容器にエキシマ分子を形成する放電ガスを充填
し、誘電体バリア放電(別名オゾナイザー放電あるいは
無声放電。電気学会発行改訂新版(放電ハンドブック)
平成1年6月再版7刷発行第263ページ参照)によっ
てエキシマ分子を形成せしめ、該エキシマ分子から放射
される光を取り出す放射器、すなわち誘電体バリア放電
ランプについて記載されている。他方、近年、被処理物
を傷めないでその表面の有機物除去、不要レジストの除
去、ドライ精密洗浄、金属表面の酸化層形成などを行う
方法として紫外光とオゾンの協動作用を利用したUV/
3 処理が開発され、実用化に至った。「UV/O3
理」については例えば単行本「オゾン利用の新技術」
(三ゆう書房発行、昭和61年11月20日)の第9章
(第301頁から第313頁、(以下文献1という))
に原理、装置、洗浄効果、用途などが詳細に解説されて
いるが、それによると、オゾンは低圧水銀ランプから放
射される真空紫外光185nmの光を、空気や、酸素を
加えた空気や、酸素ガスに照射して発生させている。そ
して、同じ低圧水銀ランプから放射される遠紫外光25
4nmの光で前記オゾンの一部を分解し、オゾンとオゾ
ン分解ガスを被処理物体表面と接触させて、当該表面上
の有機汚染物を酸化させ、CO2 やH2 Oなどの低分子
酸化物に変化させ、除去することによって当該表面をド
ライ精密洗浄している。
2. Description of the Related Art Techniques related to the present invention are, for example,
There is Japanese Patent Laid-Open Publication No. 2-7353, in which a discharge vessel is filled with a discharge gas that forms excimer molecules, and a dielectric barrier discharge (also called ozonizer discharge or silent discharge. Revised new edition issued by the Institute of Electrical Engineers of Japan (discharge) Handbook)
This paper describes a radiator, that is, a dielectric barrier discharge lamp, which forms excimer molecules by taking out June 1993, Reprint 7th Edition, page 263, and extracts light emitted from the excimer molecules. On the other hand, in recent years, as a method for removing organic substances on the surface of the object to be processed, removing unnecessary resist, dry precision cleaning, forming an oxide layer on the metal surface, etc., UV / o
O 3 treatment was developed and put to practical use. For "UV / O 3 treatment", for example, the book "New technology of ozone utilization"
(Published by San-Yu Shobo, November 20, 1986) Chapter 9 (pages 301 to 313, (hereinafter referred to as Document 1))
The principle, equipment, cleaning effect, use, etc. are described in detail in the article. According to this, ozone emits vacuum ultraviolet light of 185 nm emitted from a low-pressure mercury lamp to air, oxygen-added air, It is generated by irradiating oxygen gas. And far-ultraviolet light 25 emitted from the same low-pressure mercury lamp
Part of the ozone is decomposed with 4 nm light, and ozone and ozone decomposition gas are brought into contact with the surface of the object to be treated to oxidize organic pollutants on the surface to oxidize low molecular weight compounds such as CO 2 and H 2 O. The surface is subjected to dry precision cleaning by changing it into an object and removing it.

【0003】また、他の方法として、オゾン発生機で作
ったオゾンを処理室へ導き、低圧水銀灯から放射される
遠紫外光254nmの光をオゾンに照射して分解し、オ
ゾンとオゾン分解ガスを被処理物体表面に接触させ、当
該表面上の有機汚染物を酸化除去している。
As another method, ozone produced by an ozone generator is introduced into a processing chamber, and far ultraviolet light of 254 nm emitted from a low-pressure mercury lamp is irradiated on the ozone to decompose the ozone. By contacting the surface of the object to be treated, the organic contaminants on the surface are oxidized and removed.

【0004】上記の文献1記載の技術においては、オゾ
ン発生機を使用しない場合は、オゾン濃度が低く、生成
するオゾンの絶対量を多くしようとすると、185nm
の光が透過する距離d(cm)の値を、酸素分圧p(気
圧)が0.2気圧で10cm以上、つまりd×pの値を
約2より大きくしなければならなかった。そのため、装
置が大型化してしまう欠点があると同時に高濃度のオゾ
ンが得られず、処理スピードが遅かった。他方、オゾン
発生機を使う場合は、それ自体が高価な装置であり、経
済的な問題が発生し、使用可能な条件を狭めていた。
In the technique described in the above-mentioned document 1, when the ozone generator is not used, the ozone concentration is low, and if an attempt is made to increase the absolute amount of ozone generated, it becomes 185 nm.
The value of the distance d (cm) through which the light is transmitted must be 10 cm or more when the oxygen partial pressure p (atmospheric pressure) is 0.2 atm, that is, the value of d × p must be larger than about 2. Therefore, there is a drawback that the apparatus becomes large, and at the same time, a high concentration of ozone cannot be obtained and the processing speed is slow. On the other hand, when an ozone generator is used, it is an expensive device itself, which causes economic problems and narrows the usable conditions.

【0005】上記で述べられた方法に使用されている光
源は低圧水銀ランプ(波長254nm、185nm)で
あった。他方、磯らは第41回応用物理学会関係連合講
演会講演要旨集30p−ZE−2で、ガラス表面のUV
/O3 洗浄において、キセノンガスを封入した172n
mに中心波長を持つ誘電体バリア放電ランプを使用する
ことによって、低圧水銀ランプに比べ高速の洗浄処理が
可能になること、および低温でのプロセス処理が可能に
なることを報告している。
The light source used in the method described above was a low pressure mercury lamp (wavelength 254 nm, 185 nm). On the other hand, Iso et al. In the 41st Japan Society of Applied Physics, Joint Lecture Lecture Summary 30p-ZE-2
/ O 3 cleaning with 172n filled with xenon gas
It has been reported that the use of a dielectric barrier discharge lamp having a central wavelength in m enables a faster cleaning process than a low-pressure mercury lamp and enables a process process at a low temperature.

【0006】酸素分子O2 から直接に酸化能力の強い活
性酸素O( 1D)を生成できるのは、175nm以下の
波長の光と言われており、誘電体バリア放電ランプが放
射する中心波長172nmの真空紫外光は、直接活性酸
素O( 1D)を生成できる。他方、低圧水銀ランプは直
接には生成できなく、185nmの光で一度オゾンO3
を生成し、それを254nmの光で分解して活性酸素O
1D)を生成している。しかし、185nmの発光効
率はバリア放電ランプに比べかなり低く、したがって活
性酸素O( 1D)の生成効率は劣る。また、雰囲気酸素
による光の吸収係数は、185nmが0.8cm-1であ
るのに対して172nmは15cm-1と大きい。そこで
誘電体バリア放電ランプの方が低圧水銀ランプに比べ、
光源近傍でのオゾンおよび活性酸素の濃度が格段に大き
いことが言える。このように誘電体バリア放電ランプは
低圧水銀ランプに比べて優れた酸化能力を持っている
が、これまでの大気圧下での処理では、(1)光源から
被処理物体までの距離が短すぎる、(2)被処理物体表
面の凹凸によってはその効果が十分発揮されない、ま
た、(3)最適の処理条件が達成されていないなどの欠
点あるいは課題があった。
It is said that light having a wavelength of 175 nm or less can directly generate active oxygen O ( 1 D) having a strong oxidizing ability from oxygen molecule O 2, and a central wavelength of 172 nm emitted from a dielectric barrier discharge lamp. Vacuum ultraviolet light can directly generate active oxygen O ( 1 D). On the other hand, a low-pressure mercury lamp cannot be directly generated, and once it emits ozone O 3 with light of 185 nm.
To generate active oxygen O by decomposing it with light of 254 nm.
It is generating (1 D). However, the luminous efficiency at 185 nm is considerably lower than that of the barrier discharge lamp, and therefore the generation efficiency of active oxygen O ( 1 D) is inferior. Further, the absorption coefficient of light due to atmospheric oxygen is as large as 0.8 cm -1 at 185 nm and 15 cm -1 at 172 nm. Therefore, the dielectric barrier discharge lamp is
It can be said that the concentrations of ozone and active oxygen near the light source are extremely high. As described above, the dielectric barrier discharge lamp has an excellent oxidizing ability as compared with the low-pressure mercury lamp, but (1) the distance from the light source to the object to be treated is too short in the conventional treatment under atmospheric pressure. However, there are drawbacks or problems such as (2) the effect is not sufficiently exerted depending on the unevenness of the surface of the object to be treated, and (3) the optimum treatment condition is not achieved.

【0007】[0007]

【発明が解決しようとする課題】本発明は上記事情に鑑
みなされたものであって、その目的は、オゾン発生機を
使用しなくても、高濃度のオゾンあるいは活性酸化性分
解物が得られ、したがって安価で、処理スピードが大き
く、また、光源から被処理物体までの距離が稼げ、被処
理物体表面の凹凸にも均一に処理できる、被処理物体表
面もしくは当該表面上の物質を酸化する方法、汚染物や
不要有機物を酸化除去する方法、もしくは塗れ性を改善
する方法を提供することにある。
The present invention has been made in view of the above circumstances, and an object thereof is to obtain a high concentration of ozone or an active oxidative decomposition product without using an ozone generator. Therefore, it is inexpensive, the processing speed is high, the distance from the light source to the object to be processed is increased, and unevenness on the surface of the object to be processed can be uniformly processed. Another object of the present invention is to provide a method of oxidizing and removing contaminants and unnecessary organic substances, or a method of improving wettability.

【0008】[0008]

【問題を解決するための手段】本発明の目的を達成する
ため、本発明においては、次のような酸化方法を採用す
る。 (1) キセノンあるいはキセノンを主成分としたガス
を封入した誘電体バリア放電ランプから放射される真空
紫外光を、減圧下で酸素または酸素を含有する流体に照
射し、光化学反応によってオゾンおよび活性酸化性分解
物を生成せしめ、このオゾンおよび活性酸化性分解物を
被処理物体表面または当該表面上の物質に接触せしめ
て、当該表面もしくは当該物質を酸化せしめる。 (2) キセノンあるいはキセノンを主成分としたガス
を封入した誘電体バリア放電ランプから放射される真空
紫外光を、減圧下で酸素または酸素を含有する流体に照
射し、光化学反応によってオゾンおよび活性酸化性分解
物を生成せしめ、このオゾンおよび活性酸化性分解物を
被処理物体表面または当該表面上の物質に接触せしめる
とともに、前記紫外光を当該表面または当該物質にも照
射し、それらの協働作用で、当該表面もしくは当該物質
を酸化せしめる。
In order to achieve the object of the present invention, the following oxidation method is adopted in the present invention. (1) Oxygen or a fluid containing oxygen is irradiated under reduced pressure with vacuum ultraviolet light emitted from a dielectric barrier discharge lamp containing xenon or a gas containing xenon as a main component, and ozone and active oxidation are caused by a photochemical reaction. A oxidative decomposition product is generated, and the ozone and the active oxidative decomposition product are brought into contact with the surface of the object to be treated or a substance on the surface to oxidize the surface or the substance. (2) Oxygen or a fluid containing oxygen is irradiated with vacuum ultraviolet light emitted from a dielectric barrier discharge lamp containing xenon or a gas containing xenon as a main component under reduced pressure, and ozone and active oxidation are caused by a photochemical reaction. Oxidative decomposition product is generated, and the ozone and the active oxidative decomposition product are brought into contact with the surface of the object to be treated or a substance on the surface, and the ultraviolet light is also applied to the surface or the substance, and their cooperative action. Then, the surface or the substance is oxidized.

【0009】ここにおいて、誘電体バリア放電ランプの
形状としては、特に、二重円筒型もしくは平面型が使い
やすいこと、および、真空紫外光の取り出し部の全部も
しくは一部が、合成石英ガラス、サファイア、アルカリ
金属ハライドもしくはアルカリ土類金属ハライドのうち
から選択された材料が良いことが言える。
Here, as the shape of the dielectric barrier discharge lamp, in particular, a double cylinder type or a flat type is easy to use, and synthetic quartz glass or sapphire is used for all or part of the vacuum ultraviolet light extraction portion. It can be said that a material selected from alkali metal halides and alkaline earth metal halides is good.

【0010】実用上は、減圧下で酸素または酸素を含有
する流体の酸素分圧をp(気圧)とした時、処理速度を
従来の大気圧の時より速くするために、1×10-5<p
<0.2に規定するのが良いし、さらに顕著な効果を得
るためには、上記規定範囲をさらに0.005<p<
0.05に限定することが良い。不要フォトレジストの
除去の場合であれば、被処理物体表面または当該表面上
の物質を酸化せしめる際、当該表面の表層または当該物
質の酸化物が気体として蒸発速度が早まるので効率良く
当該表面から遊離もしくは除去されるように酸化するこ
とができる。
Practically, when the oxygen partial pressure of oxygen or a fluid containing oxygen is set to p (atmospheric pressure) under reduced pressure, 1 × 10 −5 is set in order to make the treatment rate faster than the conventional atmospheric pressure. <P
<0.2 is preferable, and in order to obtain a more remarkable effect, the above specified range is further 0.005 <p <
It is better to limit it to 0.05. In the case of removing unnecessary photoresist, when oxidizing the surface of the object to be treated or the substance on the surface, the surface layer of the surface or the oxide of the substance is efficiently released from the surface as a gas because the evaporation rate is accelerated. Alternatively, it can be oxidized so that it is removed.

【0011】[0011]

【作用】放電容器内にエキシマ分子を形成する放電用ガ
スを充満し、誘電体バリア放電によってエキシマ分子を
形成せしめ、該エキシマ分子から放射される光を取り出
す放射器、すなわち誘電体バリア放電ランプは、従来の
低圧水銀灯や高圧アーク放電灯にはない種々の特徴を有
している。このランプ自体は、例えば特開平2−735
3等によって既知である。本発明においては、放電用ガ
スとして、キセノンもしくはキセノンを主成分とするガ
スを指定する。
[Function] A radiator, that is, a dielectric barrier discharge lamp, which is filled with a discharge gas for forming excimer molecules in the discharge vessel to form excimer molecules by dielectric barrier discharge and takes out light emitted from the excimer molecules, , It has various features that conventional low pressure mercury lamps and high pressure arc discharge lamps do not have. This lamp itself is, for example, Japanese Patent Laid-Open No. 2-735.
3 etc. In the present invention, xenon or a gas containing xenon as a main component is designated as the discharge gas.

【0012】上記で述べてきたように、従来、誘電体バ
リア放電ランプによって励起されたキセノンのエキシマ
(Xe2*)がキセノン原子に解離する時発生する光(中
心波長172nm)を酸素または酸素を含有する流体に
照射すると、低圧水銀ランプから放射される紫外光18
5nmの場合よりも高濃度のオゾンと活性酸化性分解物
が得られることが分かっていた。
As described above, conventionally, the light (center wavelength 172 nm) generated when the excimer (Xe 2 *) of xenon excited by the dielectric barrier discharge lamp is dissociated into xenon atoms is oxygen or oxygen. Ultraviolet light emitted from a low-pressure mercury lamp when irradiated with contained fluid.
It has been known that a higher concentration of ozone and an active oxidative decomposition product can be obtained than in the case of 5 nm.

【0013】本発明では、UV/O3 洗浄において、従
来より行われていた一般条件の雰囲気での最適化につい
て検討を行い、洗浄の圧力依存性について調査、実験を
行った。その結果、減圧下では従来に比べて洗浄速度が
向上することを見いだし、最適条件を求めた。
In the present invention, in the UV / O 3 cleaning, optimization in an atmosphere of general conditions which has been conventionally performed was examined, and pressure dependency of the cleaning was investigated and an experiment was conducted. As a result, it was found that the cleaning rate was improved under the reduced pressure as compared with the conventional method, and the optimum conditions were obtained.

【0014】減圧下での洗浄速度の向上は次のように推
定できる。UV/O3 洗浄では次のステップで洗浄され
ると考えられている。 (1)オゾンおよび活性酸素の生成 O2 + hν → O( 1D)+ O( 3P) O( 3P)+O2 → O33 + hν → O( 1D)+ O2 → O( 3P)+ O2 (2)O2 の励起分子、O( 3P)、O( 1D)の被洗
浄面への拡散 (3)表面上の有機化合物と酸素活性種の酸化反応と気
化による表面からの離脱(洗浄)
The improvement of the cleaning rate under reduced pressure can be estimated as follows. UV / O 3 cleaning is considered to be performed in the next step. (1) Generation of ozone and active oxygen O 2 + hν → O ( 1 D) + O ( 3 P) O ( 3 P) + O 2 → O 3 O 3 + hν → O ( 1 D) + O 2 → O ( 3 P) + O 2 (2) Diffusion of O 2 excited molecules, O ( 3 P), and O ( 1 D) into the surface to be cleaned (3) Oxidation reaction of organic compounds and oxygen active species on the surface Detachment from the surface due to vaporization (cleaning)

【0015】これらのプロセスで、いずれが律速プロセ
スになるかは雰囲気の圧力によって変化すると考えられ
る。すなわち、低圧力領域では活性酸素の発生速度律速
で、高圧力領域では活性酸素の拡散速度律速、その中間
領域では両者の均合化によってプロセス速度が決定され
るものと考えられる。活性酸素の寿命や拡散速度等は圧
力に大きく依存するので、上記規定範囲で示した領域で
最適の洗浄条件が達成されるものと考えられる。他方、
減圧にすることにより、酸化された物質の蒸発速度も早
まり、いっそうの洗浄速度アップに寄与するものと考え
られる。これはアッシングなどの大量気化物質が存在す
る場合にはその効果が大きくなると考えられる。
It is considered that which of these processes becomes the rate-determining process depends on the pressure of the atmosphere. That is, it is considered that the process rate is determined by the rate of generation of active oxygen in the low pressure region, the rate of diffusion of active oxygen in the high pressure region, and the ratio of the two in the intermediate region. Since the lifetime and diffusion rate of active oxygen greatly depend on the pressure, it is considered that optimum cleaning conditions can be achieved in the region shown in the above specified range. On the other hand,
It is considered that the reduced pressure also accelerates the evaporation rate of the oxidized substance and contributes to further increase in the cleaning rate. This is considered to be more effective when a large amount of vaporized substances such as ashing are present.

【0016】[0016]

【実施例】図1は、本発明に使用する誘電体バリア放電
ランプの概略図である。図1において放電容器1は全長
約150mmの合成石英製で、外径14mm肉厚1mm
の内管2、内径約24mm肉厚1mmの外側管3を同軸
に配置して中空円筒状の放電空間7を形成した構造であ
る。外側管3は誘電体バリア放電の誘電体バリアと光取
り出し窓部材を兼用しており、メッシュ電極4が設けら
れている。内側管の内面には光の反射板と誘電体バリア
放電の電極を兼ねたアルミニウム薄膜電極5が設けられ
ている。放電容器の放電空間7に放電ガスとして250
トールのキセノンガスを封入した。ゲッター室8にはゲッ
ター6が設けられている。ランプの内側空所9には、必
要に応じて冷却流体例えば冷却窒素ガスが流せるように
なっている。ここで電源10によって、該誘電体バリヤ
放電ランプを入力20ワットで点灯した。その結果、波
長172nmに最大放射値を有する紫外光が効率よく放
射された。
1 is a schematic view of a dielectric barrier discharge lamp used in the present invention. In FIG. 1, the discharge vessel 1 is made of synthetic quartz with a total length of about 150 mm and has an outer diameter of 14 mm and a wall thickness of 1 mm.
The inner tube 2 and the outer tube 3 having an inner diameter of about 24 mm and a wall thickness of 1 mm are coaxially arranged to form a hollow cylindrical discharge space 7. The outer tube 3 also serves as a dielectric barrier for dielectric barrier discharge and a light extraction window member, and is provided with a mesh electrode 4. On the inner surface of the inner tube is provided an aluminum thin film electrode 5 which also serves as a light reflecting plate and an electrode for dielectric barrier discharge. 250 as a discharge gas in the discharge space 7 of the discharge vessel
Tall xenon gas was enclosed. A getter 6 is provided in the getter chamber 8. If necessary, a cooling fluid, for example, cooling nitrogen gas, can flow into the inner space 9 of the lamp. Here, the power supply 10 turned on the dielectric barrier discharge lamp with an input of 20 watts. As a result, the ultraviolet light having the maximum emission value at the wavelength of 172 nm was efficiently emitted.

【0017】図2は、上記ランプを使用したスライドガ
ラスの表面洗浄方法の説明図である。図2において、1
1は処理室であって、その内部には、試料台12、その
台の上に載せられた広さ1cm×2cmのスライドガラ
ス13が配置され、その上部に上記ランプが合成石英製
の照射窓14を介して配置されている。処理室11に
は、酸素もしくは酸素を含有するガスの酸化性流体入口
15と排出口16とが設けてあり、排出口にはバルブ2
1を介して、真空排気装置22と連結されており、任意
の圧力に減圧することが可能になっている。入口には、
例えば、混合室17とバルブ18を介して、窒素ガス源
19と酸素ガス源20が連結している。
FIG. 2 is an explanatory diagram of a method for cleaning the surface of a slide glass using the above lamp. In FIG. 2, 1
Reference numeral 1 denotes a processing chamber, in which a sample table 12 and a slide glass 13 having an area of 1 cm × 2 cm mounted on the table are arranged, and the above-mentioned lamp is provided with an irradiation window made of synthetic quartz. It is arranged through 14. The processing chamber 11 is provided with an oxidizing fluid inlet 15 and an outlet 16 for oxygen or a gas containing oxygen, and the outlet is provided with a valve 2
It is connected to the vacuum exhaust device 22 via 1 and can be depressurized to an arbitrary pressure. At the entrance,
For example, a nitrogen gas source 19 and an oxygen gas source 20 are connected via a mixing chamber 17 and a valve 18.

【0018】このような照射装置を使用して、上記ラン
プの電気入力を20ワットとし、照射窓とスライドガラ
ス表面との距離d(cm)と処理室内の酸素の分圧p
(気圧)とを変化せしめ、洗浄速度を調べた。尚、評価
に用いたスライドガラスは、前処理としてイソプロピル
アルコール(以下IPAという。)中で5分間超音波洗
浄をし、自然乾燥後大気中に2、3日間放置したものを
用いた。洗浄速度の評価には、純水の接触角を接触角計
で測定した。表面の有機汚染層の厚さが厚い方が接触角
が大きく、接触角が3度で約0.1分子層以下と言われ
ている。また今回の試料の未照射の接触角は約49度で
あった。
Using such an irradiation device, the electric input of the lamp is set to 20 watts, the distance d (cm) between the irradiation window and the surface of the slide glass and the partial pressure p of oxygen in the processing chamber are set.
(Atmospheric pressure) was changed and the washing rate was examined. The slide glass used for the evaluation was pretreated by ultrasonic cleaning in isopropyl alcohol (hereinafter referred to as IPA) for 5 minutes, naturally dried, and allowed to stand in the atmosphere for a few days. To evaluate the cleaning rate, the contact angle of pure water was measured with a contact angle meter. The thicker the surface organic contamination layer is, the larger the contact angle is, and it is said that the contact angle is 3 degrees and about 0.1 molecular layer or less. The unirradiated contact angle of the sample this time was about 49 degrees.

【0019】結果は、図3に示す表の通りである。図3
は接触角(度)のデータの説明図である。照射時間を5
秒に固定し、照射距離d(mm)を変え、酸素分圧p
(気圧)を振って接触角(度)を測定した結果をまとめ
た。この結果によれば、まず、大気圧下で照射距離1m
mの時、接触角は30度となることがわかる。また、照
射距離を1mmより大きくして減圧下で酸素分圧を下げ
て行くと接触角も小さくなって行くことが分かる。かな
り酸素分圧が低い10-3気圧から10-4気圧の所でも、
照射距離を大きくとることにより、接触角は大気圧の時
よりも小さくすることが可能である。このことより、従
来の大気圧下での洗浄に比べ、減圧下では照射距離を適
当に選ぶことにより洗浄速度が向上することが分かる。
さらに、酸素分圧を0.005気圧から0.05気圧の
範囲に限定すると、接触角は大気圧下での半分程度にな
り、洗浄の効果は顕著である。
The results are shown in the table of FIG. FIG.
FIG. 4 is an explanatory diagram of data on a contact angle (degree). Irradiation time is 5
Fixed to second, change irradiation distance d (mm), oxygen partial pressure p
The results of measuring the contact angle (degree) by shaking (atmospheric pressure) are summarized. According to this result, first, the irradiation distance is 1 m under atmospheric pressure.
It can be seen that when m, the contact angle is 30 degrees. Further, it can be seen that when the irradiation distance is made larger than 1 mm and the oxygen partial pressure is reduced under reduced pressure, the contact angle also becomes smaller. Even at a place where the oxygen partial pressure is quite low, 10 -3 to 10 -4 atm,
By increasing the irradiation distance, the contact angle can be made smaller than that at atmospheric pressure. From this, it can be seen that the cleaning speed is improved by appropriately selecting the irradiation distance under reduced pressure, as compared with the conventional cleaning under atmospheric pressure.
Further, when the oxygen partial pressure is limited to the range of 0.005 atm to 0.05 atm, the contact angle becomes about half at atmospheric pressure, and the cleaning effect is remarkable.

【0020】図4は、接触角(度)の照射時間(秒)に
よる変化を、従来の条件と本発明で見いだされた減圧下
での最適条件とで比較した結果のデータの説明図であ
る。この結果によれば、従来は接触角が10度以下にな
るのに照射時間が30秒程度要していたのが、本発明で
は10秒の照射時間で4度まで接触角が小さくなってい
る。したがって、本発明では3倍の洗浄速度があるのが
わかる。
FIG. 4 is an explanatory view of the data of the result of comparing the change of the contact angle (degree) with the irradiation time (second) under the conventional condition and the optimum condition under reduced pressure found in the present invention. . According to this result, the irradiation time of about 30 seconds was conventionally required for the contact angle to be 10 degrees or less, but in the present invention, the contact angle is reduced to 4 degrees with the irradiation time of 10 seconds. . Therefore, it can be seen that the present invention has a triple cleaning rate.

【0021】[0021]

【発明の効果】誘電体バリア放電ランプを使った被処理
物体表面または当該表面上の物質を酸化する方法は、該
ランプと被処理物体表面との狭い領域、特に被処理物体
表面近傍に、従来の低圧水銀ランプを用いる場合に比べ
10倍以上の高い濃度のオゾンと活性酸化性分解物が生
ずるので、被処理物体表面もしくは当該表面上の物を酸
化するスピードが著しく大きい。その効果は減圧下でさ
らに向上することが認められ、ある条件ではいっそう顕
著な効果が認められる。そして、大気圧下での処理で欠
点であった照射距離がかせげないことでは、かなりの照
射距離をとっても洗浄スピードを損なうことがない。ま
た同様に表面の深い凹凸に対しても効果的に洗浄が可能
となる。
EFFECTS OF THE INVENTION A method of oxidizing a surface of an object to be treated or a substance on the surface using a dielectric barrier discharge lamp is conventionally known in a narrow area between the lamp and the surface of the object to be treated, particularly in the vicinity of the surface of the object to be treated. As compared with the case of using the low-pressure mercury lamp described above, ozone and an active oxidative decomposition product having a concentration 10 times or more higher than that of the low-pressure mercury lamp are generated, so that the speed of oxidizing the surface of the object to be processed or the object on the surface is remarkably high. It is recognized that the effect is further improved under reduced pressure, and a more remarkable effect is recognized under certain conditions. In addition, since the irradiation distance, which was a drawback in processing under atmospheric pressure, cannot be reduced, the cleaning speed is not impaired even if the irradiation distance is considerable. Similarly, it is possible to effectively clean deep irregularities on the surface.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に使用する二重円筒型誘電体バリア放電
ランプの一例の説明図である。
FIG. 1 is an explanatory diagram of an example of a double cylindrical dielectric barrier discharge lamp used in the present invention.

【図2】スライドガラスの表面洗浄方法の説明図であ
る。
FIG. 2 is an explanatory view of a method for cleaning the surface of a slide glass.

【図3】表面洗浄結果のデータの説明図である。FIG. 3 is an explanatory diagram of data of a surface cleaning result.

【図4】表面洗浄結果のデータの説明図である。FIG. 4 is an explanatory diagram of data of surface cleaning results.

【符号の説明】[Explanation of symbols]

1 放電容器 2 内側管 3 外側管 4 メッシュ電極 5 アルミニウム薄膜電極 6 ゲッター 7 放電空間 8 ゲッター室 9 内側空所 10 電源 11 処理室 12 試料台 13 スライドガラス 14 照射窓 15 酸化性流体入口 16 酸化性流体排出口 17 混合室 18 バルブ 19 窒素ガス源 20 酸素ガス源 21 バルブ 22 真空排気装置 DESCRIPTION OF SYMBOLS 1 Discharge container 2 Inner tube 3 Outer tube 4 Mesh electrode 5 Aluminum thin film electrode 6 Getter 7 Discharge space 8 Getter chamber 9 Inner cavity 10 Power supply 11 Processing chamber 12 Sample stand 13 Slide glass 14 Irradiation window 15 Oxidizing fluid inlet 16 Oxidizing property Fluid outlet 17 Mixing chamber 18 Valve 19 Nitrogen gas source 20 Oxygen gas source 21 Valve 22 Vacuum exhaust device

───────────────────────────────────────────────────── フロントページの続き (72)発明者 松野 博光 兵庫県姫路市別所町佐土1194番地 ウシオ 電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Hiromitsu Matsuno 1194 Sado, Bessho-cho, Himeji-shi, Hyogo Ushio Electric Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 キセノンあるいはキセノンを主成分とし
たガスを封入した誘電体バリア放電ランプから放射され
る真空紫外光を、減圧下で酸素または酸素を含有する流
体に照射し、光化学反応によってオゾンおよび活性酸化
性分解物を生成せしめ、このオゾンおよび活性酸化性分
解物を被処理物体表面または当該表面上の物質に接触せ
しめて、当該表面もしくは当該物質を酸化せしめること
を特徴とする、被処理物体表面または当該表面上の物質
を減圧下で酸化する方法。
1. A vacuum ultraviolet light emitted from a dielectric barrier discharge lamp in which xenon or a gas containing xenon as a main component is filled, is irradiated with oxygen or a fluid containing oxygen under reduced pressure to generate ozone and ozone by a photochemical reaction. An object to be treated, characterized in that an active oxidative decomposition product is produced, and the ozone and the active oxidative decomposition product are brought into contact with the surface of the object to be processed or a substance on the surface to oxidize the surface or the substance. A method of oxidizing a surface or a substance on the surface under reduced pressure.
【請求項2】 キセノンあるいはキセノンを主成分とし
たガスを封入した誘電体バリア放電ランプから放射され
る真空紫外光を、減圧下で酸素または酸素を含有する流
体に照射し、光化学反応によってオゾンおよび活性酸化
性分解物を生成せしめ、このオゾンおよび活性酸化性分
解物を被処理物体表面または当該表面上の物質に接触せ
しめるとともに、前記紫外光を当該表面または当該物質
にも照射し、それらの協働作用で、当該表面もしくは当
該物質を酸化せしめることを特徴とする、被処理物体表
面または当該表面上の物質を減圧下で酸化する方法。
2. A vacuum ultraviolet light emitted from a dielectric barrier discharge lamp containing xenon or a gas containing xenon as a main component is irradiated under reduced pressure on oxygen or a fluid containing oxygen to generate ozone and ozone by a photochemical reaction. The active oxidative decomposition product is generated, and the ozone and the active oxidative decomposition product are brought into contact with the surface of the object to be treated or a substance on the surface, and the ultraviolet light is also applied to the surface or the substance, and their cooperation is performed. A method for oxidizing a surface of an object to be treated or a substance on the surface under reduced pressure, which comprises oxidizing the surface or the substance by an action.
【請求項3】 酸素または酸素を含有する流体の酸素分
圧をp(気圧)とした時、1×10-5<p<0.2に規
定したことを特徴とする、請求項1もしくは請求項2に
記載の、被処理物体表面または当該表面上の物質を減圧
下で酸化する方法。
3. The method according to claim 1, wherein the oxygen partial pressure of oxygen or a fluid containing oxygen is defined as 1 × 10 −5 <p <0.2 when the oxygen partial pressure is p (atmospheric pressure). Item 3. The method according to Item 2, wherein the surface of the object to be treated or the substance on the surface is oxidized under reduced pressure.
【請求項4】 被処理物体表面または当該表面上の物質
を酸化せしめる際、当該表面の表層または当該物質の酸
化物が気体として当該表面から遊離もしくは除去される
ように酸化することを特徴とする、請求項1から請求項
3に記載の、被処理物体表面または当該表面上の物質を
減圧下で酸化する方法。
4. When oxidizing a surface of an object to be treated or a substance on the surface, the surface layer of the surface or an oxide of the substance is oxidized so as to be released or removed from the surface as a gas. The method for oxidizing a surface of an object to be treated or a substance on the surface under reduced pressure according to any one of claims 1 to 3.
JP24830594A 1994-09-19 1994-09-19 Method for oxidizing the surface of an object to be treated or a substance on the surface under reduced pressure Expired - Fee Related JP2948110B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24830594A JP2948110B2 (en) 1994-09-19 1994-09-19 Method for oxidizing the surface of an object to be treated or a substance on the surface under reduced pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24830594A JP2948110B2 (en) 1994-09-19 1994-09-19 Method for oxidizing the surface of an object to be treated or a substance on the surface under reduced pressure

Publications (2)

Publication Number Publication Date
JPH0885861A true JPH0885861A (en) 1996-04-02
JP2948110B2 JP2948110B2 (en) 1999-09-13

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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559066B2 (en) 1996-08-02 2003-05-06 Sharp Kabushiki Kaisha Substrate for use in display element, method of manufacturing the same, and apparatus for manufacturing the same
US6787787B1 (en) 1998-01-23 2004-09-07 Ushiodenki Kabushiki Kaisha Ultraviolet radiation producing apparatus
US6927112B2 (en) 2001-12-07 2005-08-09 Tokyo Electron Limited Radical processing of a sub-nanometer insulation film
EP1630853A2 (en) 2004-08-25 2006-03-01 Ushiodenki Kabushiki Kaisha An operating device for an excimer lamp
JP5295968B2 (en) * 2007-09-25 2013-09-18 ルネサスエレクトロニクス株式会社 Method and apparatus for manufacturing semiconductor device

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Publication number Priority date Publication date Assignee Title
JP4407252B2 (en) * 2003-11-20 2010-02-03 ウシオ電機株式会社 Processing equipment
JP5861696B2 (en) 2013-03-28 2016-02-16 ウシオ電機株式会社 Light irradiation device
JP5765504B1 (en) 2013-09-13 2015-08-19 ウシオ電機株式会社 Light irradiation device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6559066B2 (en) 1996-08-02 2003-05-06 Sharp Kabushiki Kaisha Substrate for use in display element, method of manufacturing the same, and apparatus for manufacturing the same
US6787787B1 (en) 1998-01-23 2004-09-07 Ushiodenki Kabushiki Kaisha Ultraviolet radiation producing apparatus
US6927112B2 (en) 2001-12-07 2005-08-09 Tokyo Electron Limited Radical processing of a sub-nanometer insulation film
EP1630853A2 (en) 2004-08-25 2006-03-01 Ushiodenki Kabushiki Kaisha An operating device for an excimer lamp
JP5295968B2 (en) * 2007-09-25 2013-09-18 ルネサスエレクトロニクス株式会社 Method and apparatus for manufacturing semiconductor device

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