JPH09106764A - Manufacture of electronic tube - Google Patents

Manufacture of electronic tube

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Publication number
JPH09106764A
JPH09106764A JP26320895A JP26320895A JPH09106764A JP H09106764 A JPH09106764 A JP H09106764A JP 26320895 A JP26320895 A JP 26320895A JP 26320895 A JP26320895 A JP 26320895A JP H09106764 A JPH09106764 A JP H09106764A
Authority
JP
Japan
Prior art keywords
tube
ring
vacuum
electron tube
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26320895A
Other languages
Japanese (ja)
Inventor
Minoru Aragaki
実 新垣
Yasushi Watase
泰志 渡瀬
Toshimitsu Nagai
俊光 永井
Atsushi Kibune
淳 木舩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP26320895A priority Critical patent/JPH09106764A/en
Publication of JPH09106764A publication Critical patent/JPH09106764A/en
Pending legal-status Critical Current

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  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

PROBLEM TO BE SOLVED: To realize excellent vacuum, decrease residual gas in an electron tube, and significantly reduce noise caused by remaining gas. SOLUTION: In a vacuum atmosphere, an incident window 1 having a photoelectric face 2, an indium ring 22 to which a SUS ring 22 is concentrically fitted outside, a side tube 6 holding the photoelectric face 2 in vacuum are coaxially disposed successively. The incident window 1 and side tube 6 are relatively made closer so as to block the opening end of the side tube by the incident window 1, and to push deform the indium ring 2 to vacuum seal an electron tube. The indium ring 20 is made thinner toward the center side and is formed tapered in a cross section, and a slit 21 which can communicate the outside and the inside of the electron tube until just before sealing completion is formed in the indium ring 20 so that gas inside the tube is exhausted from the slit 21.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、電子管の製造方法
に係り、特に低融点金属を用いて入射窓と側管とを真空
封止する電子管の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electron tube, and more particularly to a method of manufacturing an electron tube in which a low melting point metal is used to vacuum-seal an entrance window and a side tube.

【0002】[0002]

【従来の技術】近年、暗視野下で生体情報等を収集する
要求が高まってきている。このような中で、例えば光電
管、光電子増倍管、画像増強管などの電子管は、微弱な
光学像情報を電気信号や映像として高感度に検出できる
ことから広く利用されている。
2. Description of the Related Art In recent years, there has been an increasing demand for collecting biological information in a dark field. Under such circumstances, electron tubes such as phototubes, photomultiplier tubes, and image intensifier tubes are widely used because they can detect weak optical image information as electric signals or images with high sensitivity.

【0003】かかる用途の電子管の一例として近接型の
画像増強管を図15に示す。この画像増強管は、ガラス
製のフェースプレート(面板)からなる入射窓1の内側
に、入射窓1で受けた光学像をその明暗に応じて光電子
像に変換する光電陰極2が、アンチモン、アルカリ金
属、あるいは化合物半導体等により形成されている。そ
して、入射窓1と対向する位置には、多数のガラスファ
イバで構成されたファイバ光学プレート(FOP)から
なる出射窓3が配置され、その出射窓3の内側には、入
射される電子に応じて発光(蛍光)する蛍光面4が形成
されている。また、入射窓1と出射窓3との間には、光
電陰極2から放出された光電子を増倍して電子(二次電
子)を放出するMCP(マイクロチャンネルプレート)
5が介在され、加速、増倍された電子が蛍光面4に衝突
入射するようになっている。入射窓1と出射窓3とは、
セラミック製の側管6により接続され、管内部が高真空
に保たれている。また、側管6には、それぞれ真空気密
を保ちながら電気的導通を確保する接続手段としての電
極7,8,9が設けられている。
A proximity type image intensifying tube is shown in FIG. 15 as an example of the electron tube for such application. In this image intensifying tube, a photocathode 2 for converting an optical image received by the incident window 1 into a photoelectron image according to its brightness is provided inside an incident window 1 made of a glass face plate (face plate). It is formed of a metal or a compound semiconductor. An exit window 3 composed of a fiber optic plate (FOP) made up of a large number of glass fibers is arranged at a position facing the entrance window 1, and the inside of the exit window 3 corresponds to the incident electrons. A fluorescent surface 4 that emits light (fluorescence) is formed. Further, between the entrance window 1 and the exit window 3, an MCP (microchannel plate) which multiplies the photoelectrons emitted from the photocathode 2 and emits electrons (secondary electrons).
Electrons accelerated and multiplied by the interposition of 5 collide and enter the phosphor screen 4. The entrance window 1 and the exit window 3 are
They are connected by a side tube 6 made of ceramic, and the inside of the tubes is kept in a high vacuum. The side tube 6 is also provided with electrodes 7, 8 and 9 as connecting means for ensuring electrical continuity while maintaining vacuum tightness.

【0004】このような構成の画像増強管を製造するに
あたり、入射窓1と側管6との気密接続は、入射窓1に
光電陰極2を形成する一方、側管6と出射窓3やMCP
5等との接続を完了して側管6の一端のみを開口状態と
した後、最終組立の真空封止段階で行っている。そし
て、入射窓1と側管6との接続には、一般に、両部材の
熱膨張率等を考慮して低融点金属であるインジウム10
が用いられている。
In manufacturing the image intensifying tube having such a structure, the entrance window 1 and the side tube 6 are hermetically connected to each other by forming the photocathode 2 in the entrance window 1, while the side tube 6 and the exit window 3 and the MCP are formed.
After the connection with 5 and the like is completed and only one end of the side tube 6 is opened, it is performed in the vacuum sealing stage of the final assembly. In addition, the connection between the entrance window 1 and the side tube 6 is generally made of indium 10 which is a low melting point metal in consideration of the thermal expansion coefficient of both members.
Is used.

【0005】従来、インジウムによる封止方法として、
特開昭62−262353号公報に記載されるように、
インジウム環に硬質金属環を設けた封止部材を用いる方
法が知られている。この封止部材を用いる方法は、図1
6に示すように、真空雰囲気中で、光電陰極2を有する
入射窓1と、硬質金属環11を外周に設けたインジウム
環12と、光電陰極2を真空中に保持するための側管6
とを同軸上に順次配設した後、入射窓1および側管6を
相対的に接近させることにより、側管6の開口端を入射
窓1で閉塞するとともに、インジウム環12を押圧変形
させて真空封止を行うものである。
Conventionally, as a sealing method using indium,
As described in JP-A-62-262353,
A method using a sealing member in which a hard metal ring is provided on an indium ring is known. The method using this sealing member is shown in FIG.
As shown in FIG. 6, in a vacuum atmosphere, an entrance window 1 having a photocathode 2, an indium ring 12 provided with a hard metal ring 11 on the outer periphery, and a side tube 6 for holding the photocathode 2 in vacuum are provided.
After coaxially arranging and, the incident window 1 and the side tube 6 are relatively brought close to each other, the opening end of the side tube 6 is closed by the incident window 1, and the indium ring 12 is pressed and deformed. Vacuum sealing is performed.

【0006】[0006]

【発明が解決しようとする課題】一般に、真空気密の良
否は、入射窓1や側管6の端面とインジウム環12の表
面との接触の仕方に大きく依存し、この接触部分の濡れ
性が悪いと、良好な真空気密は保てない。ところが、真
空封止前には、真空中で予め脱ガスのための熱処理が施
されるのが通常である。その結果、インジウム環12の
表面には、酸化被膜が形成されている場合がある。金属
の酸化被膜は濡れ性を悪化させので、気密不良の要因と
なる。
Generally, the quality of vacuum airtightness largely depends on the manner of contact between the end face of the entrance window 1 and the side tube 6 and the surface of the indium ring 12, and the wettability of this contact portion is poor. Therefore, good vacuum tightness cannot be maintained. However, before vacuum sealing, a heat treatment for degassing is usually performed in advance in vacuum. As a result, an oxide film may be formed on the surface of the indium ring 12. Since the metal oxide film deteriorates the wettability, it causes poor airtightness.

【0007】そこで、インジウムを多量に使用してその
変形量を大きくし、表面の酸化被膜を崩すことが考えら
れる。しかし、上記従来の製造方法では、用いるインジ
ウム環12の肉厚は均一であり、まず最初にインジウム
環12の表面は、入射窓1および側管6の各端面と面接
触で接触する。したがって、インジウム環12の表面に
存在する酸化被膜はインジウムを多量に使用しても崩れ
難く、インジウム環12と入射窓1や側管6との界面に
酸化被膜が残存し、気密不良を生じるおそれがあった。
また、インジウム環12の肉厚が均一であると、入射窓
1と側管6とが押圧時に位置ずれ(芯ずれ)を起こす場
合があり、これも真空気密を阻害する要因になってい
た。
Therefore, it is conceivable to use a large amount of indium to increase the amount of deformation thereof and destroy the oxide film on the surface. However, in the above-described conventional manufacturing method, the thickness of the indium ring 12 used is uniform, and first, the surface of the indium ring 12 comes into surface contact with each end face of the entrance window 1 and the side tube 6. Therefore, the oxide film existing on the surface of the indium ring 12 does not easily collapse even if a large amount of indium is used, and the oxide film remains at the interface between the indium ring 12 and the incident window 1 or the side tube 6, which may cause poor airtightness. was there.
Further, if the thickness of the indium ring 12 is uniform, the incident window 1 and the side tube 6 may be misaligned (center misalignment) when pressed, which is also a factor that impedes vacuum airtightness.

【0008】なお、インジウムを内溝付きのインジウム
溜めに多量に詰めて変形量を増加させる方法が、特開平
6−318439号公報に開示されているが、この方法
でも、脱ガスのためのベーキング時に過剰に詰めたイン
ジウムはインジウム溜めから内溝に流れ出してしまうの
で、その効果は期待できなかった。
A method for increasing the amount of deformation by filling a large amount of indium in an indium reservoir with an inner groove is disclosed in Japanese Patent Laid-Open No. 6-318439, but this method also uses baking for degassing. Since the excessively filled indium sometimes flows out from the indium reservoir into the inner groove, its effect could not be expected.

【0009】さらに、従来の製造方法では、インジウム
環12の押圧変形時に、インジウムの変形により発生す
るガスが画像増強管の管内に閉じ込められていた。ビジ
コンのように電子管の容量が大きいものにあっては、イ
ンジウムから発生するガス程度では感度上問題ないもの
の、小型のPMT(光電子増倍管)で極微弱光を高感度
に検出しようとする場合には、インジウムから発生した
ガスが小容量の電子管内に残留することによって、雑音
が発生してしまい、電子管の性能を著しく低下させてい
た。
Further, in the conventional manufacturing method, when the indium ring 12 is pressed and deformed, the gas generated by the deformation of indium is confined inside the image intensifying tube. In the case of a vidicon, which has a large electron tube capacity, a gas generated from indium does not cause a problem in sensitivity, but when a very small PMT (photomultiplier tube) is used to detect extremely weak light with high sensitivity. However, the gas generated from indium remains in the electron tube having a small capacity, so that noise is generated and the performance of the electron tube is significantly deteriorated.

【0010】本発明は、かかる従来の問題点に鑑みてな
されたもので、良好な真空気密を得ることができ、また
電子管内に残留するガスを低減し、残留ガスによる雑音
を大幅に減少することができる電子管の製造方法を提供
することを目的とする。
The present invention has been made in view of the above-mentioned conventional problems, and it is possible to obtain good vacuum tightness, reduce the gas remaining in the electron tube, and significantly reduce the noise due to the residual gas. An object of the present invention is to provide a method of manufacturing an electron tube that can be manufactured.

【0011】[0011]

【課題を解決するための手段】上記課題を解決するため
に、請求項1に係る発明は、真空雰囲気中で、光電陰極
を有する入射窓と、低融点金属環の外周面に硬質金属環
を設けた封止リングと、光電陰極を真空中に保持するた
めの側管とを同軸上に順次配設し、封止リングを挟んで
入射窓および側管を相対的に接近させることにより側管
の開口端を入射窓で閉塞するとともに、低融点金属環を
押圧変形させて電子管の真空封止を行う電子管の製造方
法において、低融点金属環を中心側に向けて薄肉となる
断面テーパ状に形成し、かつ低融点金属環に封止完了直
前までは電子管内外を連通可能な溝を形成することとし
た。
In order to solve the above problems, the invention according to claim 1 provides an entrance window having a photocathode and a hard metal ring on the outer peripheral surface of the low melting point metal ring in a vacuum atmosphere. The sealing ring provided and the side tube for holding the photocathode in vacuum are sequentially arranged coaxially, and the entrance window and the side tube are relatively brought close to each other with the sealing ring sandwiched between them. In the method of manufacturing an electron tube in which the opening end of is closed by the entrance window and the low melting metal ring is pressed and deformed to vacuum seal the electron tube, the low melting metal ring is tapered toward the center side to have a tapered cross-section. It was decided to form a groove in the low melting point metal ring that allows communication between the inside and outside of the electron tube until just before the completion of sealing.

【0012】また、請求項2に係る発明は、低融点金属
はインジウム又はインジウムを主成分とする合金であ
り、溝は低融点金属環の内周面から外周面に向けて形成
されている。
In the invention according to claim 2, the low melting point metal is indium or an alloy containing indium as a main component, and the groove is formed from the inner peripheral surface to the outer peripheral surface of the low melting point metal ring.

【0013】さらに、請求項3に係る発明は、製造する
電子管が、更に、光電陰極において光電変換され真空中
に放出された光電子を増倍して二次電子を放出する電子
増倍手段を備えていることを特徴とする。
Further, in the invention according to claim 3, the electron tube to be manufactured further comprises electron multiplying means for multiplying photoelectrons photoelectrically converted in the photocathode and emitted into a vacuum to emit secondary electrons. It is characterized by

【0014】さらに、請求項4に係る発明は、製造する
電子管が、更に、入射した電子に応じて発光する発光表
示手段とを備えていることを特徴とする。
Further, the invention according to claim 4 is characterized in that the manufactured electron tube further comprises a light emitting display means which emits light in response to incident electrons.

【0015】本発明の製造方法においては、中心に向け
て漸次薄肉となるような断面テーパ状に形成した低融点
金属環を用いているので、真空封止の押圧時、まず最初
に低融点金属環の表面には、入射窓および側管の各端面
周縁部が低融点金属環を切り込むように接触し始め、低
融点金属環を変形させていく。したがって、低融点金属
環の表面に酸化被膜が存在したとしても、酸化被膜を破
って入射窓や側管の端面が低融点金属環の内部にあった
非酸化状態の低融点金属に接触する。これにより、真空
気密を再現性良く保持することができる。
In the manufacturing method of the present invention, since the low-melting-point metal ring is formed in a tapered cross-section so that the thickness gradually decreases toward the center, the low-melting-point metal ring is first pressed at the time of pressing in vacuum sealing. The entrance window and the peripheral portions of the end faces of the side tubes start contacting the surface of the ring so as to cut into the low melting point metal ring, and the low melting point metal ring is deformed. Therefore, even if an oxide film is present on the surface of the low melting point metal ring, the oxide film is broken and the end face of the entrance window or the side tube comes into contact with the non-oxidizing low melting point metal inside the low melting point metal ring. This makes it possible to maintain vacuum tightness with good reproducibility.

【0016】また、低融点金属環が断面テーパ状である
ことから、入射窓と低融点金属環と側管との芯合わせが
容易にでき、低融点金属環の押圧も位置ずれすることな
く行うことができる。したがって、良好な真空気密を得
ることができる。
Further, since the low-melting-point metal ring has a tapered cross-section, the entrance window, the low-melting-point metal ring and the side tube can be easily aligned with each other, and the low-melting point metal ring is pressed without displacement. be able to. Therefore, good vacuum tightness can be obtained.

【0017】さらに、本発明では、低融点金属環に、封
止完了直前までは電子管内外を連通可能な排気用の溝を
形成している。例えば、低融点金属環を入射窓および側
管の径よりも大径とし、径方向に向かう溝を形成する。
これにより、入射窓と側管とで溝が潰され封止が完了す
るまでは、低融点金属環の変形により発生し管内部に入
ってしまったガスを、溝を介して管外に排気することが
できる。したがって、電子管内に残留するガスを低減
し、残留ガスによる雑音を大幅に減少することができ
る。
Further, according to the present invention, an exhaust groove is formed in the low melting point metal ring so that the inside and outside of the electron tube can communicate with each other until just before the completion of sealing. For example, the low-melting-point metal ring has a diameter larger than the diameter of the entrance window and the side tube, and the groove extending in the radial direction is formed.
As a result, the gas generated by the deformation of the low melting point metal ring and entering the inside of the tube is exhausted to the outside of the tube through the groove until the groove is crushed by the incident window and the side tube and sealing is completed. be able to. Therefore, the gas remaining in the electron tube can be reduced, and the noise due to the residual gas can be significantly reduced.

【0018】[0018]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

(実施形態1)図1〜図9により、本発明の実施形態1
に係る製造方法を説明する。
(Embodiment 1) Embodiment 1 of the present invention will be described with reference to FIGS.
The manufacturing method according to the present invention will be described.

【0019】図1,図2は本実施形態に係る画像増強管
の真空封止の前後の状態を示す要部の一部破砕正面図で
あり、図1はインジウム環20およびSUS環22から
なる封止リングを挟んで、内面に光電陰極2が形成され
た入射窓1と側管6を同軸上に配置した状態、図2は入
射窓1の内面周辺部と側管6の開口端部との間でインジ
ウム環20を押圧変形させて真空封止を完了した状態を
示す。
FIGS. 1 and 2 are partially fragmented front views showing the state before and after vacuum sealing of the image intensifying tube according to this embodiment, and FIG. 1 is composed of an indium ring 20 and a SUS ring 22. A state in which the entrance window 1 having the photocathode 2 formed on the inner surface and the side tube 6 are arranged coaxially with each other with the sealing ring sandwiched therebetween, FIG. 2 shows the inner peripheral portion of the entrance window 1 and the open end of the side tube 6. The state is shown in which the indium ring 20 is pressed and deformed in between to complete vacuum sealing.

【0020】図3は本発明に係る製造方法で製造した画
像増強管の一例を示すもので、同図において図15に示
す画像増強管と同一構成部分については同一符号をもっ
て示してある。図3の画像増強管では、図15に示す画
像増強管と異なり、光電陰極2から真空中に放出された
光電子の増倍手段であるMCPは設けられていない。ま
た、入射窓1と側管6との接続には、図4〜6に示す封
止リングが用いられている。
FIG. 3 shows an example of an image intensifying tube manufactured by the manufacturing method according to the present invention. In FIG. 3, the same components as those of the image intensifying tube shown in FIG. 15 are designated by the same reference numerals. Unlike the image intensifying tube shown in FIG. 15, the image intensifying tube shown in FIG. 3 is not provided with MCP which is a means for multiplying photoelectrons emitted from the photocathode 2 into a vacuum. Further, the sealing ring shown in FIGS. 4 to 6 is used for connecting the entrance window 1 and the side tube 6.

【0021】図4は本実施形態で使用した封止リングを
示す斜視図であり、図5および図6はそれぞれ図4にお
けるV−V線断面矢視図およびVI−VI線断面矢視図
である。外径が入射窓1および側管6よりも大径に形成
されたインジウム環20は、側管6の内径よりも大きな
内径となるような幅で形成されている。また、インジウ
ム環20は、中心側に向けて薄肉となる断面テーパ状に
形成されている。そして、インジウム環20の両面のテ
ーパ面には、それぞれ周方向を8等分する間隔で径方向
に延在しかつテーパ面に沿ったU字状の溝21が形成さ
れている。なお、一方の面の溝21と他方の面の溝21
とは、軸方向に重なることなく、一方の面の溝21が他
方の面の隣り合う溝21の中間位置に形成されている。
FIG. 4 is a perspective view showing the sealing ring used in the present embodiment, and FIGS. 5 and 6 are sectional views taken along the line VV and VI-VI in FIG. 4, respectively. is there. The indium ring 20 having an outer diameter larger than that of the entrance window 1 and the side tube 6 is formed with a width such that the inner diameter is larger than the inner diameter of the side tube 6. Moreover, the indium ring 20 is formed in a tapered cross-section that becomes thinner toward the center side. Then, U-shaped grooves 21 are formed on the tapered surfaces on both sides of the indium ring 20 so as to extend in the radial direction at intervals that divide the circumferential direction into eight equal parts and extend along the tapered surfaces. The groove 21 on one surface and the groove 21 on the other surface
Means that the groove 21 on one surface is formed at an intermediate position between the adjacent grooves 21 on the other surface without overlapping in the axial direction.

【0022】さらに、このインジウム環20には、ステ
ンレス鋼からなるSUS環22が同心状に取り付けら
れ、インジウム環20はSUS環22に保持されてい
る。SUS環22の高さは、インジウム環20の外周厚
と同一となるようになっている。
Further, a stainless steel SUS ring 22 is concentrically attached to the indium ring 20, and the indium ring 20 is held by the SUS ring 22. The height of the SUS ring 22 is the same as the outer peripheral thickness of the indium ring 20.

【0023】このような構成の封止リングを用いて、以
下のように画像増強管を製造する。図7は本実施形態で
使用する真空排気装置を示す。図7における第1の真空
容器23内には、その軸線上に対向配置される支持棒2
4,25が、ベローズなどを介して気密状態を保持しな
がら接近離反自在に設けられている。また、第1の真空
容器23には、ゲートバルブ26を介して第2の真空容
器27が接続されている。
An image intensifying tube is manufactured in the following manner using the sealing ring having such a structure. FIG. 7 shows an evacuation device used in this embodiment. In the first vacuum container 23 shown in FIG. 7, the support rods 2 are arranged so as to face each other on the axis thereof.
4, 25 are provided to be able to approach and separate from each other while maintaining an airtight state via a bellows or the like. Further, a second vacuum container 27 is connected to the first vacuum container 23 via a gate valve 26.

【0024】まず、光電陰極2を形成した入射窓1を一
方の支持棒25の内端部に設けるとともに、蛍光面4を
形成した出射窓3が予め気密に接続された側管6を、他
方の支持棒24の内端部に設け、さらに、これら入射窓
1と側管6との間にSUS環22を外嵌したインジウム
環20を設ける。第1の真空容器23内を所定の真空度
になるまで真空排気した後、ゲートバルブ26を開き、
図示を省略した搬送装置により入射窓1を第2の真空容
器27内へ搬送する。その後、第2の真空容器27内
で、入射窓1に形成された光電陰極2を約600℃まで
加熱し、光電陰極2の表面加熱清浄化を行う。
First, the entrance window 1 having the photocathode 2 formed therein is provided at the inner end of one of the supporting rods 25, and the side tube 6 to which the exit window 3 having the phosphor screen 4 is airtightly connected in advance is connected to the other side. The support rod 24 is provided at the inner end portion thereof, and further, the indium ring 20 having the SUS ring 22 fitted therein is provided between the incident window 1 and the side tube 6. After evacuating the inside of the first vacuum container 23 to a predetermined vacuum degree, open the gate valve 26,
The entrance window 1 is carried into the second vacuum container 27 by a carrying device (not shown). Thereafter, in the second vacuum container 27, the photocathode 2 formed in the entrance window 1 is heated to about 600 ° C. to clean the surface of the photocathode 2 by heating.

【0025】次に、光電陰極2を室温付近まで降温し、
CsとO2 の塗布により表面の仕事関数を低下させるた
めの活性化処理を行う。なお、この間に、第1の真空容
器23内のSUS環22、出射窓3の蛍光面4等を脱ガ
スする。その後、活性化処理を施した光電陰極2を支持
する入射窓1を再び第1の真空容器23内に搬送する。
この段階で、入射窓1とインジウム環20と側管6と
は、同軸上に位置している。
Next, the temperature of the photocathode 2 is lowered to near room temperature,
An activation treatment for lowering the work function of the surface is performed by applying Cs and O 2 . During this period, the SUS ring 22 in the first vacuum container 23, the fluorescent screen 4 of the emission window 3 and the like are degassed. Then, the entrance window 1 supporting the photocathode 2 that has been subjected to the activation treatment is conveyed again into the first vacuum container 23.
At this stage, the entrance window 1, the indium ring 20, and the side tube 6 are coaxially located.

【0026】次に、支持棒24,25を互いに接近(図
7中の矢印方向)させ、入射窓1と側管6とによりイン
ジウム環20を押圧変形し、インジウム環20に設けた
溝21が潰れるまで押圧して真空封止を完了する。図1
に押圧開始直前の各部材の位置関係を示し、図2に真空
封止が完了した状態を示す。
Next, the support rods 24 and 25 are brought close to each other (in the direction of the arrow in FIG. 7), the indium ring 20 is pressed and deformed by the entrance window 1 and the side tube 6, and the groove 21 provided in the indium ring 20 is formed. Press until it is crushed to complete vacuum sealing. FIG.
FIG. 2 shows the positional relationship of each member immediately before the start of pressing, and FIG. 2 shows the state where the vacuum sealing is completed.

【0027】このような製造方法においては、真空封止
の押圧時、まず最初にインジウム環20の表面には、入
射窓1および側管6の各端面周縁部がインジウム環20
を切り込むように接触し始め、インジウム環20を変形
させていく。このとき、インジウム環20は径方向内外
に変形しようとするが、外側への変形はSUS環22に
より抑制され、ほとんどが内側へ変形していく。これに
より、インジウム環20の表面に酸化被膜が存在したと
しても、酸化被膜を破ってインジウム環20を大きく変
形させ、入射窓1や側管6の端面がインジウム環20の
内部にあった非酸化状態のインジウムに接触する。その
押圧開始時点での要部断面を図8に示し、真空封止完了
時点での要部断面を図9に示す。
In such a manufacturing method, when the vacuum sealing is pressed, first, on the surface of the indium ring 20, the peripheral edge portions of the end faces of the entrance window 1 and the side tube 6 are formed.
To make contact with each other so that the indium ring 20 is deformed. At this time, the indium ring 20 tends to deform inward and outward in the radial direction, but the outward deformation is suppressed by the SUS ring 22, and most of it deforms inward. As a result, even if an oxide film is present on the surface of the indium ring 20, the oxide film is broken and the indium ring 20 is largely deformed, so that the end faces of the entrance window 1 and the side tube 6 are not oxidized inside the indium ring 20. Contact indium in the state. FIG. 8 shows a cross section of a main part at the start of pressing, and FIG. 9 shows a cross section of the main part at the time of completion of vacuum sealing.

【0028】また、インジウム環20が断面テーパ状で
あり、溝21も等間隔に設けられていることから、入射
窓1とインジウム環20と側管6との芯合わせが容易に
でき、インジウム環20の押圧も位置ずれすることなく
行われ、良好な真空気密が確保される。
Further, since the indium ring 20 has a tapered cross-section and the grooves 21 are provided at equal intervals, the entrance window 1, the indium ring 20 and the side tube 6 can be easily aligned with each other, and the indium ring 20 can be easily aligned. The pressing of 20 is also performed without displacement, and good vacuum tightness is secured.

【0029】一方、入射窓1と側管6とで溝21が潰さ
れ封止が完了するまでは、インジウム環20の変形によ
り発生し管内部に入ってしまったガスは、溝21を介し
て管外に排気される。したがって、画像増強管内に残留
するガスは低減され、残留ガスによる雑音は大幅に減少
される。
On the other hand, until the groove 21 is crushed by the entrance window 1 and the side tube 6 and sealing is completed, the gas generated by the deformation of the indium ring 20 and entering the inside of the tube passes through the groove 21. Exhausted outside the pipe. Therefore, the gas remaining in the image intensifier tube is reduced, and the noise due to the residual gas is significantly reduced.

【0030】(実施形態2)図10は本発明に係る製造
方法で製造したマイクロチャンネルプレート内蔵型の光
電子増倍管の一例を示すもので、同図において図15に
示す画像増強管と同一構成部分については同一符号をも
って示す。
(Embodiment 2) FIG. 10 shows an example of a photomultiplier tube with a built-in microchannel plate manufactured by the manufacturing method according to the present invention. In FIG. 10, the same structure as the image intensifier tube shown in FIG. 15 is shown. Parts are denoted by the same reference numerals.

【0031】図10のマイクロチャンネルプレート光電
子増倍管では、図15に示す画像増強管と異なり、蛍光
面を形成した出射窓に変えてMCP5で増倍された光電
子を収集する陽極28が設けられている。符号29は、
電極を示す。また、入射窓1と側管6との接続には、前
記実施形態1と同様の封止部材が用いられている。
Unlike the image intensifier tube shown in FIG. 15, the microchannel plate photomultiplier tube of FIG. 10 is provided with an anode 28 for collecting photoelectrons multiplied by MCP5 instead of the emission window having a fluorescent screen. ing. Reference numeral 29 is
The electrodes are shown. Further, the same sealing member as that of the first embodiment is used for connecting the entrance window 1 and the side tube 6.

【0032】本実施形態のマイクロチャンネルプレート
光電子増倍管の製造は、図11に示すように、実施形態
1と同一の真空排気装置により行う。その方法は、側管
6にMCP5や陽極28を予め接続した後に真空封止作
業を始めること等、実施形態1と同様である。ただし、
光電陰極2の活性化処理作業中にSUS環22等の脱ガ
スを行うとき、MCP5および陽極28の脱ガスも行
う。また、このとき、場合によっては、MCP5をCs
によりアルカリ処理してもよい。その他、真空封止時の
作用、効果も実施形態1と同様である。
As shown in FIG. 11, the microchannel plate photomultiplier of this embodiment is manufactured by the same vacuum exhaust device as in the first embodiment. The method is the same as that of the first embodiment, such as starting the vacuum sealing operation after previously connecting the MCP 5 and the anode 28 to the side tube 6. However,
When degassing the SUS ring 22 and the like during the activation process of the photocathode 2, the MCP 5 and the anode 28 are also degassed. At this time, depending on the case, MCP5 is changed to Cs.
May be treated with alkali. In addition, the operation and effect at the time of vacuum sealing are similar to those of the first embodiment.

【0033】(実施形態3)図12は本発明に係る製造
方法で製造した画像増強管の一例を示すもので、この画
像増強管は、図15に示す画像増強管とほぼ同一構成で
あり、封止部分が異なるだけである。図12の画像増強
管においては、入射窓1と側管6との接続には、実施形
態1と同様の封止部材が用いられている。
(Embodiment 3) FIG. 12 shows an example of an image intensifying tube manufactured by the manufacturing method according to the present invention. This image intensifying tube has substantially the same structure as the image intensifying tube shown in FIG. Only the sealing part is different. In the image intensifying tube of FIG. 12, the same sealing member as that of the first embodiment is used for connecting the entrance window 1 and the side tube 6.

【0034】本実施形態の画像増強管の製造は、図13
に示すように、実施形態1と同一の真空排気装置により
行う。その方法は、側管6にMCP5や出射窓3を予め
接続した後に真空封止作業を始めること等、実施形態1
と同様である。ただし、光電陰極2の活性化処理作業中
にSUS環22等の脱ガスを行うとき、MCP5の脱ガ
スも行う。また、このとき、場合によっては、MCP5
をCsによりアルカリ処理してもよい。その他、真空封
止時の作用、効果も実施形態1と同様である。
The manufacture of the image intensifying tube according to this embodiment is as shown in FIG.
As shown in FIG. 3, the same vacuum exhaust device as that of the first embodiment is used. The method is such that the vacuum sealing work is started after the MCP 5 and the emission window 3 are connected to the side tube 6 in advance.
Is the same as However, when degassing the SUS ring 22 and the like during the activation process of the photocathode 2, the MCP 5 is also degassed. At this time, depending on the case, MCP5
May be alkali-treated with Cs. In addition, the operation and effect at the time of vacuum sealing are similar to those of the first embodiment.

【0035】なお、上記各実施形態においては、同一構
成の封止部材を用いたが、本発明はかかる実施形態に限
定されるものではなく、例えば図14(a)および
(b)に示すような構成の封止部材を用いてもよい。
(a)の封止部材のインジウム環30には、両面に連続
する溝31が形成されている。これに対し、(b)の封
止部材のインジウム環32には、テーパ面に沿わない断
面三角形状の溝33が両面に形成されている。溝の断面
形状は、U字状、V字状、三角形状等の如何を問わず、
溝を設ける面も片面だけでも両面でもよい。さらに、イ
ンジウム環の厚さとSUS環の高さとの関係等も上記実
施形態に限定されない。すなわち、低融点金属環に封止
完了直前までは電子管内外を連通可能な排気用の溝が形
成されていればよい。
In each of the above-mentioned embodiments, the sealing member having the same structure is used, but the present invention is not limited to this embodiment, and as shown in FIGS. 14 (a) and 14 (b), for example. You may use the sealing member of various structures.
The indium ring 30 of the sealing member of (a) is provided with the grooves 31 continuous on both sides. On the other hand, in the indium ring 32 of the sealing member of (b), grooves 33 having a triangular cross section which do not follow the tapered surface are formed on both sides. The cross-sectional shape of the groove may be U-shaped, V-shaped, triangular, or the like,
The surface on which the groove is provided may be only one surface or both surfaces. Further, the relationship between the thickness of the indium ring and the height of the SUS ring is not limited to the above embodiment. That is, it suffices that an exhaust groove is formed in the low-melting-point metal ring so that the inside and outside of the electron tube can communicate with each other just before the completion of sealing.

【0036】また、側管6にセラミック製のものを用い
た場合を例に説明したが、ガラスあるいは金属などでも
本発明を適用でき、その材質に制限がないのはもちろん
である。さらに、真空封止する部材の接合部分に薄膜を
塗布して接合し易くすることも可能である。
Although the case where the side tube 6 is made of ceramic is used as an example, the present invention can be applied to glass or metal, and the material is not limited. Furthermore, it is possible to apply a thin film to the joining portion of the members to be vacuum-sealed to facilitate the joining.

【0037】本発明は、実施形態1における画像増強管
の蛍光面を金属電極に置き換えて陽極とし、光電管とし
て動作させる電子管にも適用でき、同様に、蛍光面をフ
ォトダイオード、CCDなどの半導体素子に置き換えて
電子打ち込み型とした電子管にも適用できる。また、本
発明は、実施形態2におけるMCPを備えた光電子倍増
管に限らず、他の2次増倍機能を備えた一般的な光電子
増倍管に広く適用できる。実施形態3ではいわゆる近接
型の画像増強管を例としたが、例えば静電収束型の画像
増強管でも同様である。
The present invention can also be applied to an electron tube that operates as a phototube by replacing the fluorescent surface of the image intensifying tube in Embodiment 1 with a metal electrode and using it as an anode. Similarly, the fluorescent surface has a semiconductor element such as a photodiode or CCD. It can also be applied to an electron implantation type electron tube. The present invention is not limited to the photomultiplier tube having the MCP according to the second embodiment, but can be widely applied to other general photomultiplier tubes having a second-order multiplication function. In the third embodiment, a so-called proximity type image intensifying tube is taken as an example, but the same applies to, for example, an electrostatic focusing type image intensifying tube.

【0038】[0038]

【発明の効果】以上のように、本発明の電子管の製造方
法によれば、中心側に向けて薄肉となる断面テーパ状に
形成した低融点金属環を用いているので、真空封止の押
圧時、入射窓や側管の端面と低融点金属環との接触状態
が良好となり、また入射窓と低融点金属環と側管との芯
合わせが容易で、低融点金属環の押圧も位置ずれするこ
となく行うことができ、従来50%以下であった良好な
真空気密を得ることができる確率をほぼ100%に改善
できる。
As described above, according to the method of manufacturing the electron tube of the present invention, since the low melting point metal ring formed in the tapered shape in cross section which becomes thinner toward the center side is used, the vacuum sealing pressing is performed. At this time, the contact state between the low-melting point metal ring and the end face of the side window becomes good, and the centering of the low-melting point metal ring with the side window is easy, and the pressure of the low-melting point metal ring is misaligned. It is possible to improve the probability of obtaining a good vacuum airtightness, which was 50% or less in the past, to almost 100%.

【0039】さらに、低融点金属環に、封止完了直前ま
では電子管内外を連通可能な排気用の溝を形成している
ので、入射窓と側管とで溝が潰され封止が完了するまで
は、低融点金属環の変形により発生し管内部に入ってし
まったガスを管外に排気することができ、電子管内に残
留するガスを低減し、残留ガスによる雑音を従来の1/
10以下に著しく減少することができる。
Furthermore, since a groove for exhaust which can communicate the inside and outside of the electron tube is formed in the low melting point metal ring until just before the sealing is completed, the groove is crushed by the incident window and the side tube, and the sealing is completed. Up to the first, the gas generated by the deformation of the low melting point metal ring and entering the inside of the tube can be exhausted outside the tube, reducing the gas remaining in the electron tube and reducing the noise due to the residual gas to 1 /
It can be significantly reduced to 10 or less.

【図面の簡単な説明】[Brief description of the drawings]

【図1】実施形態1の一製造過程を示す一部破断正面図
である。
FIG. 1 is a partially cutaway front view showing one manufacturing process of the first embodiment.

【図2】実施形態1の真空封止完了状態を示す一部破断
正面図である。
FIG. 2 is a partially cutaway front view showing a vacuum sealing completion state of the first embodiment.

【図3】実施形態1で製造した画像増強管を示す概略構
成図である。
FIG. 3 is a schematic configuration diagram showing an image intensifying tube manufactured in the first embodiment.

【図4】実施形態1で用いた封止部材を示す斜視図であ
る。
FIG. 4 is a perspective view showing a sealing member used in the first embodiment.

【図5】図4におけるV−V線断面矢視図である。5 is a cross-sectional view taken along the line VV in FIG.

【図6】図4におけるVI−VI線断面矢視図である。6 is a sectional view taken along line VI-VI in FIG.

【図7】実施形態1で使用した真空排気装置を示す概略
構成図である。
FIG. 7 is a schematic configuration diagram showing a vacuum exhaust device used in the first embodiment.

【図8】実施形態1の一製造過程を示す要部縦断面図で
ある。
FIG. 8 is a longitudinal sectional view of an essential part showing the manufacturing process of the first embodiment.

【図9】実施形態1の真空封止完了状態を示す要部縦断
面図である。
FIG. 9 is a vertical cross-sectional view of essential parts showing a vacuum-sealed completed state of the first embodiment.

【図10】実施形態2で製造した光電子増倍管を示す概
略構成図である。
10 is a schematic configuration diagram showing a photomultiplier tube manufactured in Embodiment 2. FIG.

【図11】実施形態2で使用した真空排気装置を示す概
略構成図である。
FIG. 11 is a schematic configuration diagram showing a vacuum exhaust device used in a second embodiment.

【図12】実施形態3で製造した画像増強管を示す概略
構成図である。
FIG. 12 is a schematic configuration diagram showing an image intensifying tube manufactured in a third embodiment.

【図13】実施形態3で使用した真空排気装置を示す概
略構成図である。
FIG. 13 is a schematic configuration diagram showing a vacuum exhaust device used in a third embodiment.

【図14】本発明で用いることができる封止部材の変形
例を示す縦断面図である。
FIG. 14 is a vertical cross-sectional view showing a modified example of the sealing member that can be used in the present invention.

【図15】画像増強管を示す概略構成図である。FIG. 15 is a schematic configuration diagram showing an image intensifying tube.

【図16】従来の画像増強管の製造方法を示す要部縦断
面図である。
FIG. 16 is a longitudinal sectional view of an essential part showing a conventional method for manufacturing an image intensifying tube.

【符号の説明】[Explanation of symbols]

1…入射窓、2…光電陰極、3…出射窓、4…蛍光面、
5…MCP、6…側管、10…インジウム、11…硬質
金属環、12,20,30,32…インジウム環、2
1,31,33…溝、22…SUS環、28…陽極。
1 ... Incident window, 2 ... Photocathode, 3 ... Exit window, 4 ... Phosphor screen,
5 ... MCP, 6 ... Side tube, 10 ... Indium, 11 ... Hard metal ring, 12, 20, 30, 32 ... Indium ring, 2
1, 31, 33 ... Groove, 22 ... SUS ring, 28 ... Anode.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 木舩 淳 静岡県浜松市市野町1126番地の1 浜松ホ トニクス株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Atsushi Kifuna 1126-1 Nonomachi, Hamamatsu City, Shizuoka Prefecture 1 Hamamatsu Photonics Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 真空雰囲気中で、光電陰極を有する入射
窓と、低融点金属環の外周面に硬質金属環を設けた封止
リングと、前記光電陰極を真空中に保持するための側管
とを同軸上に順次配設し、前記封止リングを挟んで前記
入射窓および前記側管を相対的に接近させることにより
前記側管の開口端を前記入射窓で閉塞するとともに、前
記低融点金属環を押圧変形させて電子管の真空封止を行
う電子管の製造方法において、 前記低融点金属環を中心側に向けて薄肉となる断面テー
パ状に形成し、かつ前記低融点金属環に封止完了直前ま
では電子管内外を連通可能な溝を形成したことを特徴と
する電子管の製造方法。
1. An entrance window having a photocathode, a sealing ring provided with a hard metal ring on an outer peripheral surface of a low melting point metal ring, and a side tube for holding the photocathode in vacuum in a vacuum atmosphere. Are sequentially arranged on the same axis, and the entrance window and the side tube are relatively brought close to each other with the sealing ring sandwiched therebetween to close the opening end of the side tube with the entrance window and the low melting point. In a method of manufacturing an electron tube in which a metal ring is pressed and deformed to perform vacuum sealing of an electron tube, the low melting point metal ring is formed into a tapered cross-section that becomes thin toward the center side, and the low melting point metal ring is sealed. A method of manufacturing an electron tube, characterized in that a groove capable of communicating the inside and outside of the electron tube was formed until just before the completion.
【請求項2】 前記低融点金属はインジウム又はインジ
ウムを主成分とする合金であり、前記溝は前記低融点金
属環の内周面から外周面に向けて形成されている請求項
1記載の電子管の製造方法。
2. The electron tube according to claim 1, wherein the low melting point metal is indium or an alloy containing indium as a main component, and the groove is formed from an inner peripheral surface to an outer peripheral surface of the low melting point metal ring. Manufacturing method.
【請求項3】 前記電子管は、光電陰極において光電変
換され真空中に放出された光電子を増倍して二次電子を
放出する電子増倍手段を備えたことを特徴とする請求項
1又は2記載の電子管の製造方法。
3. The electron tube comprises electron multiplying means for multiplying photoelectrons photoelectrically converted in a photocathode and emitted in a vacuum to emit secondary electrons. A method of manufacturing the electron tube described.
【請求項4】 前記電子管は、入射した電子に応じて発
光する発光表示手段を備えたことを特徴とする請求項1
又は2記載の電子管の製造方法。
4. The electron tube includes a light emitting display unit that emits light in accordance with incident electrons.
Or the method of manufacturing the electron tube according to item 2.
JP26320895A 1995-10-11 1995-10-11 Manufacture of electronic tube Pending JPH09106764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26320895A JPH09106764A (en) 1995-10-11 1995-10-11 Manufacture of electronic tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26320895A JPH09106764A (en) 1995-10-11 1995-10-11 Manufacture of electronic tube

Publications (1)

Publication Number Publication Date
JPH09106764A true JPH09106764A (en) 1997-04-22

Family

ID=17386290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26320895A Pending JPH09106764A (en) 1995-10-11 1995-10-11 Manufacture of electronic tube

Country Status (1)

Country Link
JP (1) JPH09106764A (en)

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