JPH09162128A - Vapor deposition method and substrate holding apparatus for vapor deposition apparatus - Google Patents
Vapor deposition method and substrate holding apparatus for vapor deposition apparatusInfo
- Publication number
- JPH09162128A JPH09162128A JP31681995A JP31681995A JPH09162128A JP H09162128 A JPH09162128 A JP H09162128A JP 31681995 A JP31681995 A JP 31681995A JP 31681995 A JP31681995 A JP 31681995A JP H09162128 A JPH09162128 A JP H09162128A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrate holding
- vapor phase
- phase growth
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manipulator (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】
【課題】 基板の温度均一性や薄膜の均一性を大幅
に向上させることができる気相成長方法及び気相成長装
置用基板保持装置を提供する。
【解決手段】 基板の気相成長面を下向きにして保持す
るとともに、該基板を公転させながら自転させる。
(57) Abstract: A vapor phase growth method and a substrate holding apparatus for a vapor phase growth apparatus capable of significantly improving the temperature uniformity of a substrate and the uniformity of a thin film are provided. SOLUTION: The vapor phase growth surface of the substrate is held downward and the substrate is rotated while revolving.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、気相成長方法及び
気相成長装置用基板保持装置に関し、詳しくは、気相成
長面を下向きにして基板を保持するフェースダウン型の
気相成長方法及び気相成長装置用基板保持装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth method and a substrate holding apparatus for a vapor phase growth apparatus, and more particularly to a face-down type vapor phase growth method for holding a substrate with a vapor phase growth surface facing downward, and The present invention relates to a substrate holding device for a vapor phase growth apparatus.
【０００２】[0002]
【従来の技術及び発明が解決しようとする課題】有機金
属化合物と水素化合物等の原料ガスを反応管内に導入
し、反応管内に設置した基板付近で反応・分解させて基
板面に所定の半導体薄膜を形成する気相成長方法が知ら
れている。この方法を実施する気相成長装置では、従
来、基板の気相成長面を上向きにして反応管内に設置し
ていたが、反応・分解により生じた生成物がパーティク
ルとして基板面に付着し、薄膜の品質を損なうことがあ
った。2. Description of the Related Art A raw material gas such as an organometallic compound and a hydrogen compound is introduced into a reaction tube and reacted and decomposed in the vicinity of a substrate installed in the reaction tube to form a predetermined semiconductor thin film on the substrate surface. A vapor phase growth method for forming a film is known. In the vapor phase growth apparatus for carrying out this method, conventionally, the vapor phase growth surface of the substrate was placed in the reaction tube facing upward, but the products generated by the reaction / decomposition adhered to the substrate surface as particles, resulting in a thin film. Quality could be compromised.
【０００３】このため、基板の気相成長面を下向きにし
て生成物の落下による影響を無くしたフェースダウン型
の気相成長装置が用いられるようになってきた。さら
に、基板の温度均一性，薄膜成長速度の均一性を得るた
めに基板自体を回転させたり、基板を保持する部材を回
転させたりすることも行われるようになってきている。
しかし、このように、基板を自転させたり、公転させた
りすることにより、基板の温度均一性や薄膜成長速度の
均一性をある程度向上させることはできるが、自転の
み、あるいは公転のみでは未だ十分ではなかった。For this reason, a face-down type vapor phase growth apparatus has been used in which the vapor phase growth surface of the substrate faces downward and the influence of the fall of the product is eliminated. Furthermore, in order to obtain the temperature uniformity of the substrate and the uniformity of the thin film growth rate, the substrate itself has been rotated or a member for holding the substrate has been rotated.
However, although the temperature uniformity of the substrate and the uniformity of the thin film growth rate can be improved to some extent by rotating orbiting the substrate in this way, only rotation or revolution is not sufficient. There wasn't.
【０００４】そこで本発明は、気相成長面を下向きにし
て基板を保持するとともに、温度均一性や薄膜の均一性
を大幅に向上させることができる気相成長方法及び気相
成長装置用基板保持装置を提供することを目的としてい
る。Therefore, the present invention holds the substrate with the vapor growth surface facing downward, and can greatly improve the temperature uniformity and the thin film uniformity, and the substrate holding for the vapor phase growth apparatus. The purpose is to provide a device.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本発明の気相成長方法は、基板を設置した反応管内
に原料ガスを導入して前記基板の気相成長面に半導体薄
膜を形成する気相成長方法において、前記反応管内で、
基板の気相成長面を下向きにして保持するとともに、該
基板を公転させながら自転させることを特徴としてい
る。In order to achieve the above object, the vapor phase growth method of the present invention comprises introducing a source gas into a reaction tube in which a substrate is installed to form a semiconductor thin film on the vapor phase growth surface of the substrate. In the vapor phase growth method to perform, in the reaction tube,
It is characterized by holding the vapor-phase growth surface of the substrate downward and rotating the substrate while revolving it.
【０００６】また、本発明の気相成長装置用基板保持装
置は、気相成長装置の反応管内で、気相成長面を下向き
にした基板を保持する基板保持装置であって、基板を保
持する円筒状の基板保持部材と、該基板保持部材が回転
可能に挿入される複数個の基板保持部材挿入孔を有する
円盤状のテーブルと、該テーブルの外周に回転可能に設
けられる内歯車付きリングとを備え、前記基板保持部材
は、中空円筒体の中空部底部に基板を支持する基板支持
部材を有するとともに、中空円筒体の上部外周に、前記
リングの内歯車に歯合する外歯車を備えたフランジを有
し、前記テーブルは、その上面に反応管内の所定位置に
設けられた回転駆動部材に係合する係合部を有し、前記
リングは、反応管内の所定位置に設けられた回転止めに
係止する係止突片を有していることを特徴としている。A substrate holding device for a vapor phase growth apparatus according to the present invention is a substrate holding apparatus for holding a substrate having a vapor phase growth surface facing downward in a reaction tube of the vapor phase growth apparatus, and holding the substrate. A cylindrical substrate holding member, a disk-shaped table having a plurality of substrate holding member insertion holes into which the substrate holding member is rotatably inserted, and a ring with an internal gear rotatably provided on the outer periphery of the table. The substrate holding member has a substrate supporting member for supporting the substrate at the bottom of the hollow portion of the hollow cylindrical body, and an outer gear that meshes with the internal gear of the ring on the outer periphery of the upper portion of the hollow cylindrical body. The table has a flange, the table has an engaging portion for engaging a rotation driving member provided at a predetermined position in the reaction tube, and the ring has a rotation stopper provided at a predetermined position in the reaction tube. Locking protrusion that locks to It is characterized by having.
【０００７】[0007]
【発明の実施の形態】以下、本発明を、図面を参照して
さらに詳細に説明する。図は、本発明を適用した気相成
長装置用基板保持装置の一例を示すもので、図１は平面
図、図２は分解断面図、図３は基板保持装置と反応管内
の部材との関係を示す説明図、図４は同じく平面図であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in more detail with reference to the drawings. FIG. 1 shows an example of a substrate holding device for a vapor phase growth apparatus to which the present invention is applied. FIG. 1 is a plan view, FIG. 2 is an exploded sectional view, and FIG. 3 is a relationship between a substrate holding device and members inside a reaction tube. And FIG. 4 is a plan view of the same.
【０００８】まず、図１及び図２において、基板保持装
置１は、基板２を保持する４個の円筒状の基板保持部材
１０と、該基板保持部材１０を保持する円盤状のテーブ
ル２０と、該テーブル２０の外周に設けられる内歯車付
きリング３０とにより構成され、基板保持部材１０及び
内歯車付きリング３０は、それぞれ上方からテーブル２
０にセットされ、複数の止めネジ３により上方への抜け
が防止されて一体的に形成される。First, in FIGS. 1 and 2, a substrate holding device 1 includes four cylindrical substrate holding members 10 for holding a substrate 2, and a disk-shaped table 20 for holding the substrate holding member 10. The table holding member 10 and the ring 30 with an internal gear are arranged on the table 2 from above, respectively.
It is set to 0 and is prevented from coming off upward by the plurality of setscrews 3 and is integrally formed.
【０００９】基板保持部材１０は、中空円筒体の中空部
底部に基板２を保持するものであって、中空円筒体の底
面には、内方に向かって突出する複数の爪状の基板支持
部材１１が設けられている。この基板支持部材１１は、
中空円筒体胴部を円筒体軸線方向に貫通する軸部１１ａ
の下端に設けられており、軸部１１ａは、中空円筒体の
上面から突出するネジ部１１ｂがナット１１ｃで固定さ
れている。また、基板保持部材１０の中空円筒体の上部
外周には、外歯車１２を備えたフランジ１３が設けられ
ている。The substrate holding member 10 holds the substrate 2 on the bottom of the hollow portion of the hollow cylindrical body, and the bottom surface of the hollow cylindrical body has a plurality of claw-shaped substrate supporting members protruding inward. 11 is provided. This substrate support member 11 is
Shaft 11a penetrating the hollow cylinder body in the cylinder axis direction
The shaft portion 11a has a screw portion 11b protruding from the upper surface of the hollow cylinder and fixed to the shaft portion 11a by a nut 11c. Further, a flange 13 having an external gear 12 is provided on the outer periphery of the upper portion of the hollow cylindrical body of the substrate holding member 10.
【００１０】基板２は、その底面（気相成長面）の周辺
部が前記基板支持部材１１に支持された状態で中空部底
部に保持され、該基板２の上面には、基板２を均一に加
熱するための均熱板４が載置される。なお、基板２の加
熱は、従来と同様の高周波コイル等により行うことがで
きる。The substrate 2 is held on the bottom of the hollow portion while the peripheral portion of the bottom surface (vapor growth surface) is supported by the substrate supporting member 11, and the substrate 2 is evenly arranged on the upper surface of the substrate 2. A soaking plate 4 for heating is placed. The substrate 2 can be heated by a high frequency coil or the like similar to the conventional one.
【００１１】前記テーブル２０は、内周部に、基板保持
部材１０を回転可能に挿入する４個の基板保持部材挿入
孔２１を等間隔で配置するとともに、外周部に、前記内
歯車付きリング３０を回転可能に載置するリング保持縁
２２を設けたもので、基板保持部材挿入孔２１の上縁部
には、基板保持部材１０のフランジ１３を載置するベア
リング２３ａと、基板保持部材１０の中空円筒体胴部外
周をガイドするベアリング２３ｂとが設けられ、リング
保持縁２２の上面には、内歯車付きリング３０の下面を
支持するベアリング２４ａと、リング３０の下面に設け
られた周状突縁３１の側面をガイドするベアリング２４
ｂとが設けられている。In the table 20, four substrate holding member insertion holes 21 into which the substrate holding member 10 is rotatably inserted are arranged at equal intervals on the inner peripheral portion, and the ring 30 with an internal gear is provided on the outer peripheral portion. A ring holding edge 22 for rotatably mounting the substrate holding member 10 is provided on the upper edge portion of the substrate holding member insertion hole 21 for mounting the flange 13 of the substrate holding member 10 and the substrate holding member 10. A bearing 23b that guides the outer circumference of the hollow cylindrical body is provided, and a bearing 24a that supports the lower surface of the ring 30 with an internal gear and a circumferential protrusion provided on the lower surface of the ring 30 are provided on the upper surface of the ring holding edge 22. Bearing 24 for guiding the side surface of the edge 31
b.
【００１２】すなわち、テーブル２０に対して、基板保
持部材１０は、その下半部を基板保持部材挿入孔２１内
に挿入した状態でベアリング２３ａ，２３ｂにより回転
可能に支持され、リング３０は、周状突縁３１をベアリ
ング２４ａ，２４ｂ間に挿入した状態でテーブル２０の
外周部に回転可能に支持されるとともに、止めネジ３の
頭部によりテーブル２０に組付けられる。この組付け状
態において、基板保持部材１０とテーブル２０とは、基
板保持部材１０の下端がテーブル２０の下面と面一にな
り、基板保持部材１０内に保持される基板２の気相成長
面も、テーブル２０の下面と面一になるように各部の寸
法が設定されている。That is, with respect to the table 20, the substrate holding member 10 is rotatably supported by the bearings 23a and 23b in a state where the lower half portion of the substrate holding member 10 is inserted into the substrate holding member insertion hole 21. The protruding edge 31 is rotatably supported on the outer peripheral portion of the table 20 with the protruding edge 31 inserted between the bearings 24a and 24b, and is attached to the table 20 by the head of the set screw 3. In this assembled state, the substrate holding member 10 and the table 20 are such that the lower end of the substrate holding member 10 is flush with the lower surface of the table 20, and also the vapor phase growth surface of the substrate 2 held in the substrate holding member 10. The dimensions of each part are set so as to be flush with the lower surface of the table 20.
【００１３】また、テーブル２０の上面には、一対の逆
Ｌ字型の係合部２５が相対向するように突設されてお
り、前記内歯車付きリング３０の外周対向部には、係止
突片３２が突設されている。A pair of inverted L-shaped engaging portions 25 are provided on the upper surface of the table 20 so as to face each other, and are engaged with the outer peripheral facing portions of the ring 30 with an internal gear. A projecting piece 32 is provided so as to project.
【００１４】図３及び図４に示すように、上述の基板保
持装置１は、テーブル２０の外縁を支持するフォーク５
により水平方向に搬送され、テーブル２０の係合部２５
は、反応管（図示せず）の所定位置に設けられた円盤状
の回転駆動部材６に側方から係合する。この状態で回転
駆動部材６を僅かに上昇させてフォーク５を後退させる
と、テーブル２０は、回転駆動部材６に係合部２５が係
合して吊上げられた状態となり、回転駆動部材６をモー
ター７等により回転駆動すると、回転駆動部材６とテー
ブル２０及び該テーブル上の各部材が一体に回転する。
そして、内歯車付きリング３０の係止突片３２は、該内
歯車付きリング３０がテーブル２０とともに回転したと
きに、反応管内の所定位置に設けられた回転止め８に係
止して内歯車付きリング３０の回転を阻止する。As shown in FIGS. 3 and 4, the substrate holding device 1 described above has a fork 5 for supporting the outer edge of the table 20.
Is carried in the horizontal direction by the engaging portion 25 of the table 20.
Engages from the side with a disk-shaped rotary drive member 6 provided at a predetermined position of a reaction tube (not shown). In this state, when the rotary drive member 6 is slightly raised and the fork 5 is retracted, the table 20 is brought into a state in which the engagement portion 25 is engaged with the rotary drive member 6 and is lifted, and the rotary drive member 6 is driven by the motor. When it is rotationally driven by 7 or the like, the rotational drive member 6, the table 20, and each member on the table rotate integrally.
When the ring 30 with the internal gear rotates with the table 20, the locking protrusion 32 of the ring 30 with the internal gear is locked to the rotation stopper 8 provided at a predetermined position in the reaction tube and the internal gear is attached. Prevent the ring 30 from rotating.
【００１５】これにより、回転止め８で回転を阻止され
た内歯車付きリング３０に対してテーブル２０が回転す
る状態となり、該テーブル２０の基板保持部材挿入孔２
１に装着されている基板保持部材１０がテーブル２０と
ともに回転し、該基板保持部材１０にセットされている
基板２がテーブル２０の回転軸を中心として公転する状
態となる。As a result, the table 20 is rotated with respect to the ring 30 with the internal gear, which is prevented from rotating by the rotation stopper 8, and the substrate holding member insertion hole 2 of the table 20 is rotated.
The substrate holding member 10 mounted on the substrate 1 rotates together with the table 20, and the substrate 2 set on the substrate holding member 10 revolves around the rotation axis of the table 20.
【００１６】さらに、基板保持部材１０のフランジ１３
に設けられた外歯車１２が内歯車付きリング３０の歯に
噛み合って基板保持部材１０が回転するので、基板２
は、テーブル２０の回転により公転しながら基板保持部
材１０の回転により自転する状態となる。Further, the flange 13 of the substrate holding member 10
Since the external gear 12 provided on the substrate meshes with the teeth of the ring 30 with the internal gear to rotate the substrate holding member 10,
Is rotated by the rotation of the table 20, and is rotated by the rotation of the substrate holding member 10.
【００１７】このように、気相成長面を下向きにして保
持した基板２を公転させながら自転させることにより、
公転のみ、あるいは自転のみの場合に比べて、薄膜の均
一性を大幅に向上させることができ、フェースダウン型
自体の利点であるパーティクルの付着防止効果と併せ
て、高品質な薄膜を効率よく製造することができる。In this way, the substrate 2 held with the vapor phase growth surface facing downward is rotated while revolving,
The uniformity of the thin film can be greatly improved compared to the case of only revolving or rotating only, and in addition to the effect of preventing particles from adhering, which is an advantage of the face-down type itself, efficiently manufacturing high quality thin film. can do.
【００１８】なお、細部の構造は、上記構成に限定され
るものではなく、保持する基板の大きさや枚数等により
適宜な形状にすることが可能である。また、回転駆動部
材や回転止めは、反応管内に設けた適宜な支持部材を介
して設置すればよく、装置の大きさなどにより任意の構
造を採用することができる。さらに、基板保持装置が保
持する基板の交換は、従来と同様に、反応管の一側に基
板交換室を設けることにより行うことができる。The detailed structure is not limited to the above-mentioned structure, and can be formed in an appropriate shape depending on the size and number of substrates to be held. Further, the rotation driving member and the rotation stopper may be installed via an appropriate supporting member provided in the reaction tube, and an arbitrary structure can be adopted depending on the size of the apparatus and the like. Furthermore, the exchange of the substrate held by the substrate holding device can be performed by providing a substrate exchange chamber on one side of the reaction tube as in the conventional case.
【００１９】[0019]
【発明の効果】以上説明したように、本発明によれば、
フェースダウン状態で保持した基板を公転及び自転させ
ながら気相成長を行うことができるから、基板の温度均
一性や、形成される薄膜の均一性を大幅に向上させるこ
とができる。As described above, according to the present invention,
Since the vapor phase growth can be performed while revolving and rotating the substrate held face down, the temperature uniformity of the substrate and the uniformity of the thin film to be formed can be significantly improved.
【図１】 気相成長装置用基板保持装置の一例を示す平
面図である。FIG. 1 is a plan view showing an example of a substrate holding device for a vapor phase growth apparatus.
【図２】 同じく分解断面図である。FIG. 2 is an exploded sectional view of the same.
【図３】 基板保持装置と反応管内の部材との関係を示
す説明図である。FIG. 3 is an explanatory diagram showing a relationship between a substrate holding device and members inside a reaction tube.
【図４】 同じく平面図である。FIG. 4 is a plan view of the same.
１…基板保持装置、２…基板、３…止めネジ、４…均熱
板、５…フォーク、６…回転駆動部材、７…モーター、
８…回転止め、１０…基板保持部材、１１…基板支持部
材、１２…外歯車、１３…フランジ、２０…テーブル、
２１…基板保持部材挿入孔、２２…リング保持縁、２３
ａ，２３ｂ，２４ａ，２４ｂ…ベアリング、２５…係合
部、３０…内歯車付きリング、３１…周状突縁、３２…
係止突片DESCRIPTION OF SYMBOLS 1 ... Substrate holding device, 2 ... Substrate, 3 ... Set screw, 4 ... Uniform plate, 5 ... Fork, 6 ... Rotation drive member, 7 ... Motor,
8 ... Rotation stop, 10 ... Substrate holding member, 11 ... Substrate supporting member, 12 ... External gear, 13 ... Flange, 20 ... Table,
21 ... Substrate holding member insertion hole, 22 ... Ring holding edge, 23
a, 23b, 24a, 24b ... Bearing, 25 ... Engaging portion, 30 ... Ring with internal gear, 31 ... Circumferential ridge, 32 ...
Locking protrusion
Claims (2)
入して前記基板の気相成長面に半導体薄膜を形成する気
相成長方法において、前記反応管内で、基板の気相成長
面を下向きにして保持するとともに、該基板を公転させ
ながら自転させることを特徴とする気相成長方法。1. A vapor phase growth method for forming a semiconductor thin film on a vapor phase growth surface of a substrate by introducing a source gas into a reaction tube in which a substrate is installed, wherein the vapor phase growth surface of the substrate faces downward in the reaction tube. And holding the substrate and rotating the substrate while revolving the substrate.
を下向きにした基板を保持する基板保持装置であって、
基板を保持する円筒状の基板保持部材と、該基板保持部
材が回転可能に挿入される複数個の基板保持部材挿入孔
を有する円盤状のテーブルと、該テーブルの外周に回転
可能に設けられる内歯車付きリングとを備え、前記基板
保持部材は、中空円筒体の中空部底部に基板を支持する
基板支持部材を有するとともに、中空円筒体の上部外周
に、前記リングの内歯車に歯合する外歯車を備えたフラ
ンジを有し、前記テーブルは、その上面に反応管内の所
定位置に設けられた回転駆動部材に係合する係合部を有
し、前記リングは、反応管内の所定位置に設けられた回
転止めに係止する係止突片を有していることを特徴とす
る気相成長装置用基板保持装置。2. A substrate holding device for holding a substrate having a vapor growth surface facing downward in a reaction tube of the vapor growth device,
A cylindrical substrate holding member for holding a substrate, a disk-shaped table having a plurality of substrate holding member insertion holes into which the substrate holding member is rotatably inserted, and an rotatably provided outer periphery of the table. A ring with a gear, wherein the substrate holding member has a substrate supporting member for supporting the substrate at the bottom of the hollow portion of the hollow cylinder, and an outer periphery that meshes with the internal gear of the ring on the outer periphery of the upper portion of the hollow cylinder. The table has a flange provided with a gear, and the table has an engaging portion on its upper surface that engages with a rotation drive member provided at a predetermined position in the reaction tube, and the ring is provided at a predetermined position in the reaction tube. Substrate holding apparatus for a vapor phase growth apparatus, having a locking projection that locks the rotation stopper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31681995A JP3610376B2 (en) | 1995-12-05 | 1995-12-05 | Substrate holding device for vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31681995A JP3610376B2 (en) | 1995-12-05 | 1995-12-05 | Substrate holding device for vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09162128A true JPH09162128A (en) | 1997-06-20 |
| JP3610376B2 JP3610376B2 (en) | 2005-01-12 |
Family
ID=18081277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31681995A Expired - Fee Related JP3610376B2 (en) | 1995-12-05 | 1995-12-05 | Substrate holding device for vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3610376B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002175992A (en) * | 2000-12-07 | 2002-06-21 | Ee Technologies:Kk | Film forming apparatus with substrate rotation mechanism |
| KR100448180B1 (en) * | 2002-02-26 | 2004-09-10 | 디지웨이브 테크놀러지스 주식회사 | MOCVD Reactor having a Planetary Gear Structure |
| JP2007266121A (en) * | 2006-03-27 | 2007-10-11 | Hitachi Cable Ltd | Vapor growth equipment |
| JP2008196031A (en) * | 2007-02-15 | 2008-08-28 | Taiyo Nippon Sanso Corp | Vapor growth equipment |
| US7662733B2 (en) | 2004-10-12 | 2010-02-16 | Hitachi Cable, Ltd. | Vapor phase growth apparatus |
| KR100943090B1 (en) * | 2007-12-07 | 2010-02-18 | 주식회사 시스넥스 | Induction heating device for large area chemical vapor deposition machine |
| JP2012153927A (en) * | 2011-01-25 | 2012-08-16 | Sharp Corp | Film forming apparatus with rotation support structure |
| JP2013219217A (en) * | 2012-04-10 | 2013-10-24 | Taiyo Nippon Sanso Corp | Vapor growth equipment |
| TWI694170B (en) * | 2018-02-09 | 2020-05-21 | 漢民科技股份有限公司 | Film forming apparatus |
| JP2021086950A (en) * | 2019-11-28 | 2021-06-03 | 東京エレクトロン株式会社 | Rotation drive mechanism and rotation drive method, and substrate processing device and substrate processing method using the same |
-
1995
- 1995-12-05 JP JP31681995A patent/JP3610376B2/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002175992A (en) * | 2000-12-07 | 2002-06-21 | Ee Technologies:Kk | Film forming apparatus with substrate rotation mechanism |
| DE10221847B4 (en) | 2000-12-07 | 2019-10-10 | Taiyo Nippon Sanso Corporation | Film forming apparatus with a substrate rotating mechanism |
| KR100448180B1 (en) * | 2002-02-26 | 2004-09-10 | 디지웨이브 테크놀러지스 주식회사 | MOCVD Reactor having a Planetary Gear Structure |
| US7662733B2 (en) | 2004-10-12 | 2010-02-16 | Hitachi Cable, Ltd. | Vapor phase growth apparatus |
| JP2007266121A (en) * | 2006-03-27 | 2007-10-11 | Hitachi Cable Ltd | Vapor growth equipment |
| JP2008196031A (en) * | 2007-02-15 | 2008-08-28 | Taiyo Nippon Sanso Corp | Vapor growth equipment |
| KR100943090B1 (en) * | 2007-12-07 | 2010-02-18 | 주식회사 시스넥스 | Induction heating device for large area chemical vapor deposition machine |
| JP2012153927A (en) * | 2011-01-25 | 2012-08-16 | Sharp Corp | Film forming apparatus with rotation support structure |
| JP2013219217A (en) * | 2012-04-10 | 2013-10-24 | Taiyo Nippon Sanso Corp | Vapor growth equipment |
| TWI694170B (en) * | 2018-02-09 | 2020-05-21 | 漢民科技股份有限公司 | Film forming apparatus |
| JP2021086950A (en) * | 2019-11-28 | 2021-06-03 | 東京エレクトロン株式会社 | Rotation drive mechanism and rotation drive method, and substrate processing device and substrate processing method using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3610376B2 (en) | 2005-01-12 |
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