JPH0917801A - Jig for heat treatment - Google Patents
Jig for heat treatmentInfo
- Publication number
- JPH0917801A JPH0917801A JP18505095A JP18505095A JPH0917801A JP H0917801 A JPH0917801 A JP H0917801A JP 18505095 A JP18505095 A JP 18505095A JP 18505095 A JP18505095 A JP 18505095A JP H0917801 A JPH0917801 A JP H0917801A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- dislocation
- jig
- crystal silicon
- dislocations
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 43
- 239000012535 impurity Substances 0.000 claims abstract description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003014 reinforcing effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 9
- 239000007795 chemical reaction product Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 6
- 230000035882 stress Effects 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、熱処理用治具に関
し、特に半導体ウエーハの熱処理に最適な熱処理用治具
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment jig, and more particularly to a heat treatment jig most suitable for heat treatment of a semiconductor wafer.
【０００２】[0002]
【従来の技術】シリコンウエーハ等の半導体ウエーハ
は、ボート等を介して炉芯管に設置され、炉芯管内に導
入された処理ガスの雰囲気下で熱処理を受ける。熱処理
炉は、横型と縦型のものがあるが、近年は、多数のウエ
ーハを処理できる縦型の熱処理炉が多く用いられるよう
になってきた。2. Description of the Related Art A semiconductor wafer such as a silicon wafer is installed in a furnace core tube via a boat or the like and is subjected to heat treatment in an atmosphere of a processing gas introduced into the furnace core tube. There are horizontal type and vertical type heat treatment furnaces, but in recent years, a vertical type heat treatment furnace capable of processing a large number of wafers has been widely used.
【０００３】従来、前記熱処理炉を構成する炉芯管、ボ
ート、その他の熱処理用治具は、石英ガラスで形成され
ることが多かった。Conventionally, a furnace core tube, a boat, and other jigs for heat treatment which constitute the heat treatment furnace are often formed of quartz glass.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、これら
の石英ガラス製の熱処理用治具は、一般に１０0 〜１０
-2ｐｐｍオーダーで鉄や銅等の金属不純物を含んでい
る。このため、熱処理用治具が炉内に導入された処理ガ
スでエッチングされると、金属不純物、又は、処理ガス
と金属不純物との反応生成物が処理ガスに混入し、被処
理ウエーハの品質が低下する問題が生じていた。[SUMMARY OF THE INVENTION However, the heat treatment jig made of these quartz glasses, typically 10 0 - 10
It contains metallic impurities such as iron and copper on the order of -2 ppm. Therefore, when the heat treatment jig is etched by the processing gas introduced into the furnace, metal impurities or reaction products of the processing gas and the metal impurities are mixed into the processing gas, and the quality of the wafer to be processed is improved. There was a diminishing problem.
【０００５】また、石英ガラス製炉芯管や石英ガラス製
ボートは、熱衝撃性に劣っており、高速で昇温・降温す
ることが難しく、ウエーハの処理効率を向上することが
できなかった。Further, the quartz glass furnace core tube and the quartz glass boat are inferior in thermal shock resistance, and it is difficult to raise and lower the temperature at a high speed, so that the processing efficiency of the wafer cannot be improved.
【０００６】このような従来技術の問題点に鑑み、本発
明は、熱処理シーケンスの高速昇温・降温が可能であ
り、処理ガス中に含まれる不純物や、熱処理用治具を介
して処理ガスに混入する恐れのある不純物を的確にトラ
ップすることによって、高純度の処理雰囲気を保ち、高
品質のウエーハを製造することを目的としている。また
本発明は、不純物のゲッタ層（有転位層）をフッ硝酸等
によるエッチングで除去し、再度有転位層を形成でき、
該熱処理治具によるゲッタ能力を長時間保持することが
可能な熱処理用治具を提供することを目的としている。In view of the above problems of the prior art, the present invention enables high-speed temperature rising / falling of the heat treatment sequence, and the impurities contained in the treatment gas and the treatment gas are processed through the jig for heat treatment. The purpose is to maintain a high-purity processing atmosphere and manufacture a high-quality wafer by accurately trapping impurities that may be mixed. Further, according to the present invention, the getter layer (dislocation layer with dislocations) of impurities can be removed by etching with hydrofluoric nitric acid or the like to form the dislocation layer again.
It is an object of the present invention to provide a heat treatment jig capable of maintaining the getter ability of the heat treatment jig for a long time.
【０００７】[0007]
【課題を解決するための手段】本願発明は、全体的に単
結晶シリコンを用いて形成され、単結晶シリコンに有転
位が設けられており、有転位を利用して重金属等の不純
物をトラップする構成になっていることを特徴とする熱
処理用治具を要旨としている。According to the present invention, single crystal silicon is wholly formed, and single crystal silicon is provided with dislocations. The dislocations are utilized to trap impurities such as heavy metals. The gist is a jig for heat treatment, which is characterized by being configured.
【０００８】[0008]
【実施例】以下、図面を参照して本発明の実施例を説明
する。図１は、本発明の熱処理用治具の一例である炉芯
管４及びボート２を示す概略図で、ボート２には半導体
ウエーハ３が設定されている。図２は、その断面図であ
る。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic view showing a furnace core tube 4 and a boat 2 which are an example of a heat treatment jig of the present invention. A semiconductor wafer 3 is set in the boat 2. FIG. 2 is a sectional view thereof.
【０００９】炉芯管４は、チョクラルスキー法によって
引き上げたシリコン単結晶をくり抜いて、全体的に円筒
形状に形成したものである。炉芯管４の上部にはガス導
入口５、底部にはガス排出口６が取り付けられている。
ガス導入口５とガス排出口６は、別部材として構成され
ているが、材質は炉芯管４と同様に有転位を含む単結晶
シリコンである。The furnace core tube 4 is formed by hollowing out a silicon single crystal pulled by the Czochralski method to form a cylindrical shape as a whole. A gas inlet 5 is attached to the top of the furnace core tube 4, and a gas outlet 6 is attached to the bottom.
The gas inlet 5 and the gas outlet 6 are configured as separate members, but the material thereof is single crystal silicon containing dislocations like the furnace core tube 4.
【００１０】単結晶シリコン製の炉芯管４には有転位が
形成されており、この有転位を利用して重金属等の不純
物をトラップする構成になっている。図１の実施例で
は、炉芯管全体に分散するように有転位が形成され、転
位密度は１０3 個／ｃｍ2 以上になっている。このよう
な転位密度で有転位を形成することによって、トラップ
した不純物が熱処理時にリークするのを確実に防止する
ことができる。Dislocations are formed in the furnace core tube 4 made of single crystal silicon, and the dislocations are utilized to trap impurities such as heavy metals. In the embodiment of FIG. 1, dislocations having dislocations are formed so as to be dispersed throughout the furnace core tube, and the dislocation density is 10 3 dislocations / cm 2 or more. By forming dislocations with such a dislocation density, it is possible to reliably prevent the trapped impurities from leaking during heat treatment.
【００１１】転位密度が１０3 個／ｃｍ2 未満の場合に
は、不純物を効果的にトラップすることができない。If the dislocation density is less than 10 3 dislocations / cm 2 , impurities cannot be effectively trapped.
【００１２】このような観点から、さらに確実なトラッ
プ効果を得るためには転位密度を１０5 〜１０6 個／ｃ
ｍ2 の範囲に設定するのが好ましい。From this point of view, in order to obtain a more reliable trap effect, the dislocation density is 10 5 to 10 6 dislocations / c.
It is preferably set in the range of m 2 .
【００１３】有転位の分布に関して述べると、有転位は
単結晶シリコン全体に大体均一に分布させることが好ま
しいが、ある程度は偏っていても良い。With respect to the distribution of dislocations, it is preferable that the dislocations are distributed almost uniformly throughout the single crystal silicon, but they may be distributed to some extent.
【００１４】単結晶シリコンの有転位は、熱応力を加え
たりサンドブラスト処理を施して、単結晶シリコンに応
力場を作り出すことによって形成できる。熱応力の付与
の仕方の一例を挙げれば、所定の温度域で急速昇降温さ
せるという熱処理を行うことによって、単結晶シリコン
に有転位を形成できる。Dislocations in single crystal silicon can be formed by applying a thermal stress or performing sandblasting to create a stress field in the single crystal silicon. As an example of how to apply thermal stress, dislocations can be formed in single crystal silicon by performing heat treatment of rapidly raising and lowering the temperature in a predetermined temperature range.
【００１５】有転位の密度の制御方法を述べると、単結
晶シリコンに作り出す応力場の程度を調整することによ
って、所望の密度で有転位を形成することができる。A method of controlling the density of dislocations will be described. By adjusting the degree of the stress field created in single crystal silicon, dislocations can be formed at a desired density.
【００１６】なお、単結晶シリコンに応力場を作り出す
ことのできる方法であれば、熱応力やサンドブラスト以
外の方法、例えばグライディング（研削）等の方法で
も、有転位を形成することが可能である。Dislocations can be formed by a method other than thermal stress or sandblasting, for example, a method such as gliding (grinding) as long as a stress field can be created in single crystal silicon.
【００１７】図１では、ボート２も炉芯管４と全く同じ
材質で形成されている。すなわち、ボート２も有転位を
持つ単結晶シリコンから形成され、有転位で不純物をト
ラップする構成になっている。有転位の密度は、炉芯管
４と同様である。In FIG. 1, the boat 2 is also made of the same material as the furnace core tube 4. That is, the boat 2 is also formed of single crystal silicon having dislocations, and has a configuration in which impurities are trapped by the dislocations. The density of dislocations is the same as that of the furnace core tube 4.
【００１８】次に、図３及び図４を参照して本発明の他
の実施例を説明する。Next, another embodiment of the present invention will be described with reference to FIGS.
【００１９】図３の炉芯管４では、単結晶シリコン製の
炉芯管４の内側部分に有転位層１６が形成されており、
それ以外の部分は無転位結晶部１５となっている。この
ように、熱処理用治具の表面の一部分に有転位層１６を
形成し、有転位層１６によって不純物をトラップする構
成にしても良い。In the furnace core tube 4 of FIG. 3, a dislocation layer 16 is formed inside the furnace core tube 4 made of single crystal silicon.
The other parts are dislocation-free crystal parts 15. In this way, the dislocation layer 16 may be formed on a part of the surface of the heat treatment jig, and the dislocation layer 16 may trap impurities.
【００２０】有転位層１６における有転位の密度は、前
記実施例で述べた範囲内で調整することが好ましい。た
だし、この場合には、“層”として有転位を集中的に形
成するため、より好ましい転位密度は、１０5 〜１０6
個／ｃｍ2 である。The density of dislocations in the dislocation layer 16 is preferably adjusted within the range described in the above embodiment. However, in this case, since dislocations having dislocations are concentratedly formed as a “layer”, a more preferable dislocation density is 10 5 to 10 6
The number of pieces / cm 2 .
【００２１】有転位層１６の肉厚は、好ましくは２０〜
２００μｍとする。その理由は、有転位層１６の肉厚が
２０μｍ未満の場合にはトラップ不純物のリークを確実
に防止できず、また２００μｍを超える場合には過剰形
成によるコスト高を招くからである。The thickness of the dislocation layer 16 is preferably 20 to
It is set to 200 μm. The reason is that if the thickness of the dislocation layer 16 is less than 20 μm, the leakage of trap impurities cannot be reliably prevented, and if it exceeds 200 μm, the cost is increased due to excessive formation.
【００２２】単結晶シリコン製の炉芯管４に有転位層１
６を形成する方法を述べる。この場合には、単結晶シリ
コン本体の所定部分、すなわち内層部分のみに応力場を
形成すれば良い。そのためには、サンドブラスト法が有
効である。他の方法では、グライディング（研削）等の
方法を利用できる。The dislocation layer 1 is formed on the furnace core tube 4 made of single crystal silicon.
A method of forming 6 will be described. In this case, the stress field may be formed only in a predetermined portion of the single crystal silicon body, that is, the inner layer portion. For that purpose, the sandblast method is effective. Alternatively, a method such as gliding can be used.
【００２３】図４の実施例では、図３の炉芯管４の外側
に補強層１７が形成されている。補強層１７は、石英ガ
ラスやＳｉＣのＣＶＤコーティングによって形成するこ
とができる。In the embodiment of FIG. 4, a reinforcing layer 17 is formed on the outside of the furnace core tube 4 of FIG. The reinforcing layer 17 can be formed by CVD coating of quartz glass or SiC.
【００２４】補強層１７の肉厚は、好ましくは０．１〜
５ｍｍ程度にする。その理由は、肉厚が０．１ｍｍ未満
では補強が十分でなく、また５ｍｍを超えると界面での
残留応力が増大して両者が剥離する可能性が大きくなる
からである。The wall thickness of the reinforcing layer 17 is preferably 0.1 to
Set to about 5 mm. The reason is that if the wall thickness is less than 0.1 mm, the reinforcement is not sufficient, and if it exceeds 5 mm, the residual stress at the interface increases and the possibility of separation between the two increases.
【００２５】ここで、直径１５０ｍｍの半導体ウエーハ
を、有転位を含む単結晶シリコン製のボートに載置し、
これを有転位を含む単結晶シリコン製の炉芯管に挿入し
（図１，２参照）、半導体ウエーハに以下の熱処理を施
した。その後でウエーハの不純物分析を行い、表面状態
も調べた。Here, a semiconductor wafer having a diameter of 150 mm was placed on a boat made of single crystal silicon containing dislocations,
This was inserted into a furnace core tube made of single crystal silicon containing dislocations (see FIGS. 1 and 2), and the semiconductor wafer was subjected to the following heat treatment. After that, the wafer was analyzed for impurities and the surface condition was also examined.
【００２６】熱処理は、処理ガスとして水素ガスを２０
リットル／分で流して、１２００℃の温度で６０分間行
った。In the heat treatment, hydrogen gas of 20 is used as a processing gas.
Flowing at l / min, it was carried out at a temperature of 1200 ° C. for 60 minutes.
【００２７】ウエーハの不純物分析及び表面状態の評価
は、ボートの中央部にセットしたウエーハに関して、市
販のＩＣＰ分析装置及びＬＳＴ（光散乱測定）装置を用
いて行った。その結果を表１に示す。The analysis of impurities on the wafer and the evaluation of the surface condition were carried out on the wafer set in the center of the boat using a commercially available ICP analyzer and LST (light scattering measurement) device. Table 1 shows the results.
【００２８】比較のため、従来の石英ガラス製炉芯管及
び石英ガラス製ボートを用いて同様の熱処理を行って、
同じ手順で不純物分析及び表面状態の評価を行った。そ
の結果も表１に示す。For comparison, the same heat treatment was performed using a conventional quartz glass furnace core tube and quartz glass boat,
Impurity analysis and surface state evaluation were performed by the same procedure. Table 1 also shows the results.
【００２９】表１から分かるように、本発明実施例の炉
心管及びボートを用いて熱処理を行った場合には、不純
物が少なく、かつ優れた表面状態を実現できる。As can be seen from Table 1, when the heat treatment is carried out using the core tube and the boat of the embodiment of the present invention, impurities are reduced and an excellent surface condition can be realized.
【００３０】他方、ＣＶＤ−ＳｉＣの補強層を外側に形
成した炉芯管及びボートを用いて同様の熱処理を行った
場合にも、ほぼ同様の結果が得られた。On the other hand, substantially the same result was obtained when the same heat treatment was performed using the furnace core tube and the boat having the CVD-SiC reinforcing layer formed on the outside.
【００３１】[0031]
【表１】 [Table 1]
【００３２】[0032]
【発明の効果】本発明の熱処理用治具によれば、熱処理
時に処理ガスと治具自体が反応することが殆どないた
め、例えば水分を含む反応生成物が生成されることがな
い。その結果、高純度の処理雰囲気を維持でき、表面状
態を良好に保った高品質のウエーハを製造することが可
能である。According to the jig for heat treatment of the present invention, since the treatment gas and the jig itself hardly react during the heat treatment, for example, a reaction product containing water is not generated. As a result, it is possible to maintain a high-purity processing atmosphere and manufacture a high-quality wafer having a good surface condition.
【００３３】さらに、本発明の熱処理用治具によれば、
処理雰囲気中の不純物又は熱処理用治具を介して処理ガ
スに混入する恐れのある不純物を、当該治具に形成した
有転位で確実にトラップすることができる。このため、
処理雰囲気をさらに高純度に保ち、さらに高品質のウエ
ーハを製造することが可能である。Further, according to the heat treatment jig of the present invention,
Impurities in the processing atmosphere or impurities that may be mixed in the processing gas through the heat treatment jig can be reliably trapped by the dislocations formed in the jig. For this reason,
It is possible to maintain the processing atmosphere at a higher purity and to manufacture a higher quality wafer.
【００３４】また、本発明の熱処理用治具を用いた場合
には、熱処理シーケンスの高速昇温・降温が可能であ
る。従って、熱処理を効率良く、かつ最適なシーケンス
で行うことができる。Further, when the heat treatment jig of the present invention is used, it is possible to rapidly raise and lower the temperature of the heat treatment sequence. Therefore, the heat treatment can be performed efficiently and in an optimum sequence.
【００３５】なお、有転位トラップ手段にトラップした
不純物は、フッ硝酸等の溶液によるエッチング、或いは
塩酸ガス中等での空焼きで取り除くことができる。The impurities trapped in the dislocation trapping means can be removed by etching with a solution of hydrofluoric nitric acid or the like, or by baking in a hydrochloric acid gas or the like.
【００３６】また、熱処理治具の長期間使用に伴う有転
位層の不純物ゲッタ能力低下は、不純物で飽和した有転
位層をフッ硝酸等によるエッチングにより除去し、再度
上記有転位層を形成することができ、その結果、熱処理
治具の寿命が延び且つ高品質のウエーハをより安定して
製造できる。The deterioration of the impurity gettering ability of the dislocation layer due to the long-term use of the heat treatment jig is caused by removing the dislocation layer saturated with impurities by etching with hydrofluoric nitric acid or the like to form the above-mentioned dislocation layer again. As a result, the life of the heat treatment jig is extended and a high quality wafer can be manufactured more stably.
【図１】本発明の熱処理用治具の一例である炉芯管とボ
ートを示す概念図。FIG. 1 is a conceptual diagram showing a furnace core tube and a boat which are an example of a heat treatment jig of the present invention.
【図２】図１の炉芯管とボートを示す概略断面図。FIG. 2 is a schematic cross-sectional view showing the furnace core tube and the boat of FIG.
【図３】他の実施例の図２に相当する図。FIG. 3 is a diagram corresponding to FIG. 2 of another embodiment.
【図４】さらに他の実施例の図２に相当する図。FIG. 4 is a diagram corresponding to FIG. 2 of still another embodiment.
１ ウエーハ ２ ボート ３ 半導体ウエーハ ４ 炉芯管 ５ ガス導入口 ６ ガス排出口 １５ 無転位結晶部 １６ 有転位層 １７ 補強層 1 Wafer 2 Boat 3 Semiconductor Wafer 4 Furnace Core Tube 5 Gas Inlet 6 Gas Outlet 15 Dislocation Free Crystal Part 16 Dislocation Layer 17 Reinforcement Layer
Claims (5)
れ、単結晶シリコンに有転位が設けられており、有転位
を利用して重金属等の不純物をトラップする構成になっ
ていることを特徴とする熱処理用治具。1. A single crystal silicon is entirely formed, dislocations are provided in the single crystal silicon, and the dislocations are used to trap impurities such as heavy metals. Jig for heat treatment.
され、その転位密度が、１０3 個／ｃｍ2 以上であるこ
とを特徴とする請求項１に記載の熱処理用治具。2. The heat treatment jig according to claim 1, wherein dislocations having dislocations are dispersedly formed in the single crystal silicon and the dislocation density is 10 3 dislocations / cm 2 or more.
転位密度が１０3 〜１０7 個／ｃｍ2 であり、それ以外
の部分は無転位結晶であることを特徴とする請求項１に
記載の熱処理用治具。3. A single crystal silicon has a dislocation layer is its dislocation density 10 3 to 10 7 / cm 2, claim 1 other portions, which is a dislocation-free crystal The heat treatment jig described in.
たことを特徴とする請求項３に記載の熱処理用治具。4. The heat treatment jig according to claim 3, wherein the dislocation layer has a thickness of 20 to 200 μm.
熱処理用治具表面の少なくとも一部分に形成したことを
特徴とする請求項１〜４のいずれか１項に記載の熱処理
用治具。5. The jig for heat treatment according to claim 1, wherein a reinforcing layer made of quartz glass or SiC is formed on at least a part of the surface of the jig for heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18505095A JP3205488B2 (en) | 1995-06-29 | 1995-06-29 | Jig for heat treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18505095A JP3205488B2 (en) | 1995-06-29 | 1995-06-29 | Jig for heat treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0917801A true JPH0917801A (en) | 1997-01-17 |
| JP3205488B2 JP3205488B2 (en) | 2001-09-04 |
Family
ID=16163928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18505095A Expired - Fee Related JP3205488B2 (en) | 1995-06-29 | 1995-06-29 | Jig for heat treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3205488B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086525A (en) * | 2001-09-12 | 2003-03-20 | Toshiba Ceramics Co Ltd | Jig for heat treatment of silicon wafer and method of manufacturing the same |
| US8193004B2 (en) | 2004-03-18 | 2012-06-05 | Sumitomo Osaka Cement Co., Ltd. | Method for forming ferroelectric spontaneous polarization reversal |
-
1995
- 1995-06-29 JP JP18505095A patent/JP3205488B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003086525A (en) * | 2001-09-12 | 2003-03-20 | Toshiba Ceramics Co Ltd | Jig for heat treatment of silicon wafer and method of manufacturing the same |
| US8193004B2 (en) | 2004-03-18 | 2012-06-05 | Sumitomo Osaka Cement Co., Ltd. | Method for forming ferroelectric spontaneous polarization reversal |
| US8293543B2 (en) | 2004-03-18 | 2012-10-23 | Sumitomo Osaka Cement Co., Ltd. | Method for forming polarization reversal |
| US8669121B2 (en) | 2004-03-18 | 2014-03-11 | Sumitomo Osaka Cement Co., Ltd. | Method for forming polarization reversal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3205488B2 (en) | 2001-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8486835B2 (en) | Czochralski growth of randomly oriented polysilicon and use of randomly oriented polysilicon dummy wafers | |
| JP5052493B2 (en) | Method for producing silicon single crystal | |
| JP6971622B2 (en) | Manufacturing method of semiconductor wafer and semiconductor wafer | |
| JPH08148552A (en) | Semiconductor thermal treatment jig and its surface treatment method | |
| US20060191468A1 (en) | Process for producing single crystal | |
| JPH0917801A (en) | Jig for heat treatment | |
| CN114929951A (en) | Single crystal manufacturing apparatus | |
| US7199057B2 (en) | Method of eliminating boron contamination in annealed wafer | |
| KR20140118905A (en) | Silicon member and method of producing the same | |
| JP2800867B2 (en) | Silicon single crystal manufacturing equipment | |
| US20090249996A1 (en) | Silicon single crystal pulling method | |
| EP1662024A1 (en) | Process for producing single crystal and silicon single crystal wafer | |
| JP3900816B2 (en) | Silicon wafer manufacturing method | |
| JP2004224642A (en) | Single crystal manufacturing apparatus | |
| JPH11292685A (en) | Apparatus for extending life of graphite susceptor for growing silicon single crystal by coating with silicon nitride and extending method | |
| US7601227B2 (en) | High purification method of jig for semiconductor heat treatment | |
| JP7276190B2 (en) | Manufacturing method of silicon single crystal | |
| JPH08288231A (en) | Core tube for heat treatment | |
| JP7252884B2 (en) | Silicon wafer heat treatment method | |
| ITMI20011120A1 (en) | SILICON WAFERS HAVING CONTROLLED DISTRIBUTION OF DEFECTS, METHODS OF PREPARING THEMSELVES, AND CZOCHRALSKI EXTRACTORS FOR THE FACTORY | |
| JP7282019B2 (en) | Silicon wafer and its heat treatment method | |
| JP2007059606A (en) | Vertical wafer boat and vertical heat treatment furnace | |
| JPH05294789A (en) | Method for pulling up silicon crystal | |
| JP2021090067A (en) | Silicon wafer | |
| JPH09227291A (en) | Silicon single crystal wafer and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080629 Year of fee payment: 7 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080629 Year of fee payment: 7 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080629 Year of fee payment: 7 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080629 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090629 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100629 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100629 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110629 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110629 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120629 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120629 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130629 Year of fee payment: 12 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |