JPH0918059A - Thermoelectric converter - Google Patents

Thermoelectric converter

Info

Publication number
JPH0918059A
JPH0918059A JP7162477A JP16247795A JPH0918059A JP H0918059 A JPH0918059 A JP H0918059A JP 7162477 A JP7162477 A JP 7162477A JP 16247795 A JP16247795 A JP 16247795A JP H0918059 A JPH0918059 A JP H0918059A
Authority
JP
Japan
Prior art keywords
substrate
heat
heat transfer
transfer medium
thermoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7162477A
Other languages
Japanese (ja)
Other versions
JP3560391B2 (en
Inventor
Hideo Watanabe
日出男 渡辺
Hirofusa Tezuka
弘房 手塚
Mitsutoshi Ogasawara
光敏 小笠原
Nobuhiko Suzuki
伸彦 鈴木
Kazuya Sato
一也 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technova Inc
Original Assignee
Technova Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technova Inc filed Critical Technova Inc
Priority to JP16247795A priority Critical patent/JP3560391B2/en
Publication of JPH0918059A publication Critical patent/JPH0918059A/en
Application granted granted Critical
Publication of JP3560391B2 publication Critical patent/JP3560391B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25BREFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B2321/00Details of machines, plants or systems, using electric or magnetic effects
    • F25B2321/02Details of machines, plants or systems, using electric or magnetic effects using Peltier effects; using Nernst-Ettinghausen effects
    • F25B2321/025Removal of heat
    • F25B2321/0252Removal of heat by liquids or two-phase fluids

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

(57)【要約】 【目的】 十分に高い熱電変換能力を有する性能的に優
れた熱電変換装置を提供する。 【構成】 N型半導体層ならびにP型半導体層を支持す
る基体4の半導体層支持面と反対側の面に対して液状熱
移動媒体21を衝突するように、前記液状熱移動媒体2
1を供給する供給手段6、7を設けたことを特徴とす
る。
(57) [Summary] [Object] To provide a thermoelectric conversion device having a sufficiently high thermoelectric conversion capability and excellent in performance. The liquid heat transfer medium 2 is arranged so that the liquid heat transfer medium 21 collides with the surface of the base 4 supporting the N-type semiconductor layer and the P-type semiconductor layer opposite to the semiconductor layer supporting surface.
It is characterized in that supply means 6 and 7 for supplying 1 are provided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電子冷却装置あるいは
熱発電装置などの熱電変換装置に係り、特にそれの熱移
動媒体として水や不凍液などの液体を使用した熱電変換
装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric conversion device such as an electronic cooling device or a thermoelectric generator, and more particularly to a thermoelectric conversion device using a liquid such as water or antifreeze as its heat transfer medium.

【0002】[0002]

【従来の技術】図21ならびに図22は従来の熱電変換
装置を説明するための図で、図21は熱電変換装置の一
部を断面した平面図、図22は図21のX−X線上の断
面図である。
21 and 22 are views for explaining a conventional thermoelectric conversion device. FIG. 21 is a plan view showing a part of the thermoelectric conversion device in section, and FIG. 22 is a view taken on line XX of FIG. FIG.

【0003】図21に示すようにアルミナなどのセラミ
ックからなる吸熱側絶縁基板100と放熱側絶縁基板1
01との間に、電極ならびにP形,N形半導体層からな
る熱電変換素子群102が介在されている。
As shown in FIG. 21, a heat absorbing side insulating substrate 100 and a heat radiating side insulating substrate 1 made of ceramic such as alumina.
01, a thermoelectric conversion element group 102 composed of electrodes and P-type and N-type semiconductor layers is interposed.

【0004】前記吸熱側絶縁基板100の外表面には、
吸熱フィンなどが付設された吸熱部材103が取りつけ
られている。前記放熱側絶縁基板101の外表面には、
その基板101側に向けて開口した流路形成部材104
が取りつけられている。この流路形成部材104の内側
には、熱移動媒体である水105を放熱側絶縁基板10
1の外表面に沿って一方の端部から他方の端部に向けて
蛇行状に流すための仕切板からなる流路形成部材104
が設けられている。また、流路形成部材104の一方の
端部近くには供給管107が、他方の端部近くには排出
管108が、それぞれ取り付けられている。
[0004] On the outer surface of the heat absorbing side insulating substrate 100,
A heat absorbing member 103 provided with heat absorbing fins or the like is attached. On the outer surface of the heat radiation side insulating substrate 101,
The flow path forming member 104 opened toward the substrate 101 side
Is attached. Inside the flow path forming member 104, water 105, which is a heat transfer medium, is placed on the heat radiation side insulating substrate 10.
A flow path forming member 104 composed of a partition plate for flowing in a meandering manner from one end to the other end along the outer surface of
Is provided. A supply pipe 107 is mounted near one end of the flow path forming member 104, and a discharge pipe 108 is mounted near the other end.

【0005】前記熱電変換素子群102に所定の電流を
流すとともに、前記供給管107から水105を流路形
成部材104に流入せしめる。そして吸熱部材103に
よって吸収した熱は吸熱側絶縁基板100ならびに熱電
変換素子群102を介して放熱側絶縁基板101に伝達
され、前述の水105をその放熱側絶縁基板101の外
表面に沿って蛇行状に流すことにより基板101の熱を
吸収し、その水105を排出管108から系外へ排出さ
せることにより、吸熱部材103側が冷却される。
A predetermined current is supplied to the thermoelectric conversion element group 102, and water 105 is caused to flow from the supply pipe 107 into the flow path forming member 104. The heat absorbed by the heat absorbing member 103 is transmitted to the heat radiating side insulating substrate 101 via the heat absorbing side insulating substrate 100 and the thermoelectric conversion element group 102, and the water 105 meanders along the outer surface of the heat radiating side insulating substrate 101. The heat of the substrate 101 is absorbed by flowing the water, and the water 105 is discharged from the discharge pipe 108 to the outside of the system, whereby the heat absorbing member 103 side is cooled.

【0006】この関連技術として、例えば特表平6−5
04361号公報、特開平5−322366号公報、特
開平5−343750号公報などが挙げられる。
As a related technique, for example, Japanese Patent Application Laid-Open No.
04361, JP-A-5-322366, JP-A-5-343750 and the like.

【0007】[0007]

【発明が解決しようとする課題】ところで、この従来の
熱電変換装置ではまだ十分に高い熱電変換能力を得るこ
とができないという問題点を有している。
However, this conventional thermoelectric converter has a problem that a sufficiently high thermoelectric conversion capability cannot be obtained yet.

【0008】本発明者らはこの問題点について鋭意検討
した結果、熱電変換装置の特に熱移動媒体の流し方に問
題があることを解明した。すなわち従来の熱電変換装置
では、熱移動媒体が絶縁基板の表面に沿って単に蛇行状
に流れるだけであるから、熱移動媒体と絶縁基板との間
の熱コンダクタンスが低く、そのために十分な熱電変換
能力を得ることができないことを見出した。
The present inventors have made intensive studies on this problem and as a result, have found out that there is a problem in the flow of the heat transfer medium, particularly in the thermoelectric converter. That is, in the conventional thermoelectric conversion device, since the heat transfer medium simply flows in a meandering shape along the surface of the insulating substrate, the thermal conductance between the heat transfer medium and the insulating substrate is low, and therefore, sufficient thermoelectric conversion I found that I could not get the ability.

【0009】本発明の目的は、このような従来技術の欠
点を解消し、十分に高い熱電変換能力を有する性能的に
優れた熱電変換装置を提供することにある。
An object of the present invention is to solve the above disadvantages of the prior art and to provide a thermoelectric conversion device having a sufficiently high thermoelectric conversion capability and excellent performance.

【0010】[0010]

【課題を解決するための手段】前記目的を達成するた
め、本発明は、N型半導体層ならびにP型半導体層を支
持する、例えば電気絶縁薄膜を有する金属板などからな
る基体の半導体層支持面と反対側の面に対して、例えば
水や不凍液などの液状熱移動媒体を衝突するように、前
記液状熱移動媒体を供給する、例えば分散部材などの供
給手段を設けたことを特徴とするものである。
In order to achieve the above object, the present invention provides a semiconductor layer supporting surface of a substrate which supports an N-type semiconductor layer and a P-type semiconductor layer, for example, a metal plate having an electrically insulating thin film. The liquid heat transfer medium such as water or antifreeze is collided with the surface opposite to the liquid heat transfer medium, for example, a supply member such as a dispersion member is provided. Is.

【0011】[0011]

【作用】従来の熱電変換装置は基体(基板)の表面に沿
って液状熱移動媒体を流して、基体と液状熱移動媒体の
間で熱の移動を行っていた。これに対して本発明は、基
体の面に対して液状熱移動媒体を衝突させるもので、液
状熱移動媒体の基体と接す状態が確実に乱流となってい
るため、熱の移動が効率的になされ、そのために装置全
体としての熱交換能力が高められる。
In the conventional thermoelectric conversion device, the liquid heat transfer medium is caused to flow along the surface of the base (substrate) to transfer heat between the base and the liquid heat transfer medium. On the other hand, according to the present invention, the liquid heat transfer medium is made to collide with the surface of the substrate, and the state in which the liquid heat transfer medium is in contact with the substrate is surely a turbulent flow. Therefore, the heat exchange capacity of the entire device is enhanced.

【0012】[0012]

【実施例】本発明の具体的な実施例を説明する前に、こ
の熱移動媒体を使用した熱電変換装置の性能改善に関す
る本発明者の全般的な知見について説明する。
EXAMPLES Before describing specific examples of the present invention, general knowledge of the present inventor regarding performance improvement of a thermoelectric conversion device using this heat transfer medium will be described.

【0013】熱移動媒体を使用した熱電変換装置の性能
を向上する方策に、〔I〕基板の熱抵抗の低減、〔II〕
熱移動媒体の流し方の改善、などが挙げられる。
Measures for improving the performance of a thermoelectric converter using a heat transfer medium include: [I] a reduction in the thermal resistance of the substrate; and [II].
Improvement of the flow of the heat transfer medium, and the like.

【0014】.前者の基板の熱抵抗を下げる有効な手
段として、従来のアルミナなどによるセラミック製の絶
縁基板の代わりに、熱抵抗の低い例えばアルマイト層を
形成したアルミニウム基板のように絶縁薄膜を有する金
属基板を使用する方法がある。具体的にはアルミニウム
基板の表面に陽極酸化法によってアルマイト被膜を形成
する方法、あるいはアルミニウム基板の表面にアルミニ
ウムを溶射してその後アルマイト層に変成する方法など
がある。
[0014] As an effective means for lowering the thermal resistance of the former substrate, a metal substrate having an insulating thin film such as an aluminum substrate formed with an alumite layer having a low thermal resistance is used instead of the conventional ceramic insulating substrate made of alumina or the like. There is a way to do that. Specifically, there is a method of forming an alumite film on the surface of an aluminum substrate by an anodizing method, or a method of spraying aluminum on the surface of an aluminum substrate and thereafter transforming it into an alumite layer.

【0015】しかし、放熱側基板も吸熱側基板も同じよ
うな肉厚のものを使用すると、金属基板はセラミック基
板に較べて熱による膨張、収縮の割合がはるかに大きい
から、放熱側基板−放熱側電極−P,N半導体層−吸熱
側電極−吸熱側基板の系において熱応力にともなう剪断
応力が増加して、信頼性の問題を発生する。
However, if the heat-radiating-side substrate and the heat-absorbing-side substrate have similar thicknesses, the metal substrate has a much larger expansion and contraction ratio due to heat than the ceramic substrate. In the side electrode-P, N semiconductor layer-heat-absorbing electrode-heat-absorbing substrate system, the shear stress accompanying the thermal stress increases, causing a problem of reliability.

【0016】.これを解決するために、一方の基板
(例えば吸熱側基板)は通常のように肉厚にしておき、
他方の基板(例えば放熱側基板)は前記吸熱側基板より
も十分に薄くして、すなわち放熱側基板と吸熱側基板の
間で厚みに差を設けることにより、その放熱側基板を吸
熱側基板の熱変形に追従できるようにして、前記系内の
熱応力の発生を軽減することができる。
[0016] In order to solve this, one substrate (for example, the heat absorbing side substrate) is made thick as usual,
The other substrate (for example, the heat radiation side substrate) is made sufficiently thinner than the heat absorption side substrate, that is, by providing a difference in thickness between the heat radiation side substrate and the heat absorption side substrate, the heat radiation side substrate is The generation of thermal stress in the system can be reduced by following the thermal deformation.

【0017】ところが、基板が薄くなることで、P,N
半導体層の占有密度(基板総面積に対するP,N半導体
層の断面積の総和の比率)が小さいときには逆に熱抵抗
の増加を招く恐れがある。
However, as the substrate becomes thinner, P, N
When the occupation density of the semiconductor layer (the ratio of the sum of the cross-sectional areas of the P and N semiconductor layers to the total area of the substrate) is small, the thermal resistance may be increased.

【0018】.そこでP,N半導体層の占有密度が小
さいときには、基板は薄いままの状態で電極の面積を相
対的に広げ、有効伝熱面積を維持することにより、熱抵
抗の増加を抑制することができる。
.. Therefore, when the occupation density of the P and N semiconductor layers is small, the area of the electrode is relatively widened while the substrate remains thin, and the effective heat transfer area is maintained, thereby suppressing an increase in thermal resistance.

【0019】一方、前記熱移動媒体の流し方について
は、熱電変換装置の全体的なシステムとしてみたとき、
例えば媒体を移動させるために必要な動力の少ない投入
電力で高い熱交換能力が得られるように改善する必要が
ある。
On the other hand, with regard to the flow of the heat transfer medium, when viewed as a whole system of the thermoelectric conversion device,
For example, there is a need to improve so that a high heat exchange capacity can be obtained with less input power required for moving the medium.

【0020】.そして高い熱交換能力を得る一手段と
して、構造的に改良して有効伝熱面積の増加を図ること
が得策である。
[0020] As a means for obtaining high heat exchange capacity, it is advisable to improve the structure to increase the effective heat transfer area.

【0021】.また高い熱交換能力を得る他の手段と
して、熱伝達係数を高くすることが考えられ、そのため
には媒体を移動させる投入電力を一定にした場合、熱移
動媒体の流路内での流動圧損を下げ、熱移動媒体の流
量、すなわち熱移動量を増す方法が得策である。本発明
は、主にこの項の技術に関するものである。
[0021] Further, as another means of obtaining a high heat exchange capacity, it is conceivable to increase the heat transfer coefficient. For that purpose, when the input power for moving the medium is constant, the flow pressure loss in the flow path of the heat transfer medium is reduced. It is a good idea to lower the flow rate of the heat transfer medium, that is, increase the heat transfer amount. The present invention mainly relates to the technology in this section.

【0022】次に本発明の実施例を図とともに説明す
る。図1は電子冷却装置として用いる熱電変換装置の斜
視図、図2はその熱電変換装置の断面図、図3は図2A
−A線上の断面図、図4ならびに図5はカバー部材の平
面図ならびに断面図、図6は分散部材の平面図、図7は
図6B−B線上の断面図である。
Next, an embodiment of the present invention will be described with reference to the drawings. 1 is a perspective view of a thermoelectric conversion device used as an electronic cooling device, FIG. 2 is a sectional view of the thermoelectric conversion device, and FIG. 3 is FIG. 2A.
-A sectional view on the line, FIGS. 4 and 5 are plan views and sectional views of the cover member, FIG. 6 is a plan view of the dispersion member, and FIG. 7 is a sectional view on the line BB-B.

【0023】図1ならびに図2に示すように、熱電変換
装置は被冷却側に接する吸熱部材1と、吸熱側基板2
と、熱電変換素子群3(図2参照)と、放熱側基板4
(図2参照)と、支持枠体5と、カバー部材6と、分散
部材7(図2参照)とから主に構成されている。
As shown in FIGS. 1 and 2, the thermoelectric conversion device comprises a heat absorbing member 1 in contact with the side to be cooled and a heat absorbing side substrate 2.
, A thermoelectric conversion element group 3 (see FIG. 2), and a heat radiation side substrate 4
(See FIG. 2), a support frame 5, a cover member 6, and a dispersion member 7 (see FIG. 2).

【0024】前記吸熱部材1は、図示していないが内部
に多数の吸熱フィンを有しており、必要に応じてファン
を付設することができる。
Although not shown, the heat absorbing member 1 has a large number of heat absorbing fins therein, and a fan can be provided if necessary.

【0025】前記吸熱側基板2ならびに放熱側基板4は
共に例えばアルミニウムなどの金属板からなり、熱電変
換素子群3と接する側の表面に例えばアルマイトなどの
電気絶縁薄膜が形成されている。陽極酸化法によってア
ルマイトの絶縁膜を形成する場合、その絶縁薄膜に封孔
処理しない方が、熱電変換素子群3との接合性が良好で
ある。電気絶縁膜は、この他に溶射などで形成すること
も可能である。
The heat absorbing side substrate 2 and the heat radiating side substrate 4 are both made of a metal plate such as aluminum, and an electrically insulating thin film such as alumite is formed on the surface in contact with the thermoelectric conversion element group 3. In the case where an alumite insulating film is formed by an anodizing method, the sealing property with the thermoelectric conversion element group 3 is better if the insulating thin film is not sealed. The electrical insulating film can also be formed by thermal spraying or the like.

【0026】図2に示すように吸熱側基板2と放熱側基
板4は板厚が異なっており(本実施例の場合は吸熱側基
板2の板厚:5mm,放熱側基板4の板厚:0.2mm
吸熱側基板2≫放熱側基板4)、板厚の薄い方の基板が
厚い方の基板の熱収縮(熱膨張)によく追従できるよう
になっており、それによって吸熱側基板2−熱電変換素
子群3−放熱側基板4間の熱応力の発生を緩和してい
る。
As shown in FIG. 2, the heat absorption side substrate 2 and the heat radiation side substrate 4 have different plate thicknesses (in the case of this embodiment, the heat absorption side substrate 2 has a plate thickness of 5 mm, and the heat radiation side substrate 4 has a plate thickness of: 0.2 mm
Heat-absorption side substrate 2 >> Heat-radiation side substrate 4), the thinner substrate is able to better follow the thermal contraction (thermal expansion) of the thicker substrate, whereby the heat-absorption side substrate 2-thermoelectric conversion element The occurrence of thermal stress between the group 3 and the heat dissipation side substrate 4 is reduced.

【0027】前記熱電変換素子群3は、図示していない
が周知のように吸熱側電極と、放熱側電極と、両電極の
間に多数配置されたP型半導体層とN型半導体層とから
構成されており、P型半導体層とN型半導体層は構造的
ならびに熱的に並列に配置されているが、電気的には前
記電極を介して直列に接続されている。
The thermoelectric conversion element group 3 includes a heat-absorbing electrode, a heat-dissipating electrode, and a large number of P-type semiconductor layers and N-type semiconductor layers disposed between both electrodes, which are not shown but are well known. The P-type semiconductor layer and the N-type semiconductor layer are structurally and thermally arranged in parallel, but are electrically connected in series via the electrodes.

【0028】前記支持枠体5は合成樹脂で成形され、放
熱側基板4を支持するとともに、基端は前記吸熱側基板
2に取りつけられている。
The support frame 5 is made of synthetic resin, supports the heat radiation side substrate 4, and has a base end attached to the heat absorption side substrate 2.

【0029】前記カバー部材6は合成樹脂で成形されて
おり、上部に垂直方向に延びた給水管部8と排水管部9
とが一体に設けられ、そして給水管部8の方はカバー部
材6のほぼ中央に、排水管部9はカバー部材6の周縁近
くに、それぞれ配置されている。カバー部材6の下半分
には下方に向けて開口した周壁10が設けられ、その内
側に空間11が形成され、そこに前記分散部材7が設置
されている。
The cover member 6 is made of synthetic resin, and has a water supply pipe portion 8 and a drain pipe portion 9 extending vertically in the upper part.
Are integrally provided, and the water supply pipe portion 8 is arranged substantially at the center of the cover member 6, and the drainage pipe portion 9 is arranged near the peripheral edge of the cover member 6. A peripheral wall 10 that opens downward is provided in the lower half of the cover member 6, a space 11 is formed inside the peripheral wall 10, and the dispersion member 7 is installed therein.

【0030】分散部材7も合成樹脂で成形されており、
図6に示すように上面の略中央に円形の凹部12が形成
され、それを取り囲むように壁部13が設けられてい
る。分散部材7の外周部でかつその厚さ方向のほぼ中間
位置につば部14が設けられ、つば部14の四隅に比較
的径大の排出穴15が形成されている。
The dispersion member 7 is also formed of a synthetic resin.
As shown in FIG. 6, a circular concave portion 12 is formed substantially at the center of the upper surface, and a wall portion 13 is provided so as to surround the concave portion. A collar portion 14 is provided at the outer peripheral portion of the dispersion member 7 and at a substantially intermediate position in the thickness direction thereof, and discharge holes 15 having a relatively large diameter are formed at four corners of the collar portion 14.

【0031】また前記凹部12の中央部に1本ならびに
外周部に等間隔に8本の垂直に貫通した供給孔16a〜
16iが設けられており、中央部の供給孔16aは他の
供給孔16b〜16iよりも若干径大となっている。
In addition, one supply hole 16a is formed in the central portion of the recess 12 and eight supply holes 16a are formed in the outer peripheral portion thereof and vertically penetrate at equal intervals.
16i is provided, and the supply hole 16a in the central portion is slightly larger in diameter than the other supply holes 16b to 16i.

【0032】図2に示すようにこの分散部材7をカバー
部材6の空間11内に挿入して、分散部材7の壁部13
の上面をカバー部材6の内面に、分散部材7のつば部1
4の外周面をカバー部材6の周壁10の内面に、それぞ
れ接着することにより、分散部材7がカバー部材6内で
位置決め固定される。そしてカバー部材6の内面と分散
部材7の上面の間に扁平状の第1空間17が、また周壁
10と壁部13とつば部14に囲まれて排水管9に連通
した四角の枠形の排水路18が、それぞれ形成される。
As shown in FIG. 2, the dispersing member 7 is inserted into the space 11 of the cover member 6 and the wall 13 of the dispersing member 7 is
Of the dispersing member 7 on the inner surface of the cover member 6.
The dispersion member 7 is positioned and fixed in the cover member 6 by bonding the outer peripheral surface of the cover member 4 to the inner surface of the peripheral wall 10 of the cover member 6. A flat first space 17 is formed between the inner surface of the cover member 6 and the upper surface of the dispersion member 7, and a rectangular frame-shaped frame surrounded by the peripheral wall 10, the wall portion 13, and the flange portion 14 and communicating with the drain pipe 9. Drainage channels 18 are respectively formed.

【0033】そしてカバー部材6の周壁10の下面を放
熱側基板4に接着することにより、分散部材7の下面と
放熱側基板4の上面との間に1〜3mm程度の隙間の狭
い扁平状の第2空間19と、その周囲に四隅の排水穴1
5に連通した集水路20が形成される。
By bonding the lower surface of the peripheral wall 10 of the cover member 6 to the heat radiation side substrate 4, a flat shape having a narrow gap of about 1 to 3 mm between the lower surface of the dispersion member 7 and the upper surface of the heat radiation side substrate 4. Second space 19 and four corner drainage holes 1 around it
A catchment channel 20 communicating with 5 is formed.

【0034】図2に示すように熱移動媒体である水21
を中央の給水管部8から供給すると第1空間17で一斉
に拡がり、9個の各供給孔16a〜16iから放熱側基
板4の平面に向けて勢いよく噴射する。放熱側基板4に
衝突して放熱側基板4の熱を奪った水21は隙間の狭い
第2空間19で拡散し、その周囲の集水路20で集めら
れ、近くの排出穴15から排水路18を経て排水管部9
から系外へ排出される。排出された水21は図示しない
ラジエタ−または自然放冷で冷却され、循環系統を通っ
て再利用される。
As shown in FIG. 2, water 21 as a heat transfer medium
When the water is supplied from the central water supply pipe portion 8, the water is spread all at once in the first space 17, and is jetted vigorously from the nine supply holes 16a to 16i toward the plane of the heat radiation side substrate 4. The water 21 that has collided with the heat dissipation side substrate 4 and has deprived the heat of the heat dissipation side substrate 4 diffuses in the second space 19 having a narrow gap, is collected by the water collecting passage 20 around the second space 19, and is drained from the drain hole 15 near the drain hole 15. Through drainage pipe section 9
From the system. The discharged water 21 is cooled by a radiator (not shown) or natural cooling, and is reused through a circulation system.

【0035】図8は第2実施例を示す図で、この例では
排出管部9がカバー部材6の周壁10に設けられ、集水
路20(図2参照)で集められた水21が排出管部9か
ら直接排水される。
FIG. 8 is a view showing a second embodiment. In this embodiment, a discharge pipe portion 9 is provided on the peripheral wall 10 of the cover member 6, and water 21 collected by a water collecting channel 20 (see FIG. 2) is discharged. Drained directly from part 9.

【0036】図9は第3実施例を示す図で、この例では
分散部材7の下面に多数の管体22が一体に設けられ、
その管体22の孔が供給孔16となっており、また管体
22と管体22の間の隙間が集水路20となっている。
FIG. 9 is a view showing a third embodiment. In this embodiment, a large number of pipes 22 are integrally provided on the lower surface of the dispersion member 7.
The hole of the pipe body 22 serves as the supply hole 16, and the gap between the pipe bodies 22 serves as the water collecting passage 20.

【0037】図10は第4実施例を示す図で、この例で
は分散部材7の下面で供給孔16の近くに水21の流れ
を案内するガイド部23が突設されており、ガイド部2
3の形状は彎曲していても直線状でもよく、分散部材7
の中央部側から周囲の集水路20側に向けて延びてい
る。
FIG. 10 is a diagram showing a fourth embodiment. In this example, a guide portion 23 for guiding the flow of the water 21 is provided on the lower surface of the dispersion member 7 near the supply hole 16, and the guide portion 2 is provided.
The shape of 3 may be curved or straight, and the dispersion member 7
Extends toward the surrounding water collecting channel 20 side from the central portion side.

【0038】図11は第5実施例を示す図で、この例で
は分散部材7の中央部側から周囲の集水路20側に向け
て延びたスリット状の供給孔16が複数本設けられてい
る。
FIG. 11 is a view showing a fifth embodiment. In this example, a plurality of slit-shaped supply holes 16 extending from the central portion side of the dispersion member 7 toward the surrounding water collecting channel 20 side are provided. .

【0039】図12は第6実施例を示す図で、この例で
はスリット状の4本の供給孔16が集水路20とほぼ平
行に延びている。
FIG. 12 is a diagram showing a sixth embodiment. In this example, four slit-shaped supply holes 16 extend substantially parallel to the water collecting passage 20.

【0040】図13は第7実施例を示す図で、この例で
は分散部材7の下面に複数の突出部24が設けられ、そ
の突出部24に1本もしくは複数本の供給孔16が穿設
されて、突出部24と突出部24の間に集水路20が形
成されている。
FIG. 13 is a diagram showing a seventh embodiment. In this example, a plurality of protrusions 24 are provided on the lower surface of the dispersion member 7, and one or a plurality of supply holes 16 are bored in the protrusions 24. Thus, the water collecting passage 20 is formed between the protruding portions 24.

【0041】図14は第8実施例を示す図で、この例で
は前述のような複数本の供給孔16は形成されておら
ず、中央部に垂直に垂下した給水管部8を有する上部材
25と、排水管部9を有する下部材26との組み合わせ
で分散部材7が構成されている。
FIG. 14 is a diagram showing an eighth embodiment. In this example, the plurality of supply holes 16 as described above are not formed, and an upper member having a water supply pipe portion 8 that vertically hangs in the central portion. The dispersion member 7 is configured by a combination of 25 and the lower member 26 having the drain pipe portion 9.

【0042】そして前記上部材25と放熱基板4の間に
隙間の狭い扁平状の第2空間19が形成され、上部材2
5の中央突出部分と下部材26の内周の間に集水路20
が形成されている。
A flat second space 19 having a narrow gap is formed between the upper member 25 and the heat radiating substrate 4.
5 and the inner circumference of the lower member 26
Are formed.

【0043】図15は第9実施例を示す図で、この例で
は給水管部8が分散部材7の側面から中央部下面に向け
て延びており、放熱基板4と衝突した水は分散部材7の
中央部上面から排出されるようになっている。
FIG. 15 is a view showing a ninth embodiment. In this embodiment, a water supply pipe section 8 extends from the side surface of the dispersion member 7 toward the lower surface of the central portion. Is discharged from the upper surface of the central part.

【0044】図16は第10実施例を示す図で、前述の
各実施例では供給孔16あるいは給水管部8が放熱基板
4の面に対してほぼ垂直に配置されていたが、この例で
は供給孔16あるいは給水管部8が放熱基板4の面に対
して傾斜して設けられており、この傾斜により水21の
流れ方向が一定となり、スムーズに流れて圧損の低減に
寄与している。
FIG. 16 is a view showing a tenth embodiment. In each of the above-mentioned embodiments, the supply hole 16 or the water supply pipe portion 8 is arranged substantially perpendicular to the surface of the heat dissipation board 4, but in this embodiment, The supply hole 16 or the water supply pipe portion 8 is provided so as to be inclined with respect to the surface of the heat dissipation substrate 4, and the inclination makes the flow direction of the water 21 constant, and the water 21 flows smoothly to contribute to the reduction of pressure loss.

【0045】図17ならびに図18は第11実施例を示
す図で、この例では放熱基板4に対する熱電変換素子群
3の取付け領域27が放熱基板4の中央部を基準にて四
方に分割され、その取付け領域27と取付け領域27の
間に断面形状が山形の屈曲部28が形成されている。こ
の屈曲部28は図に示すようにリブ状に連続していて
も、断続的なものでもよく、また屈曲部28は熱電変換
素子群3側に向けて突出しても、反対に熱電変換素子群
3とは反対側に向けて突出してもよい。なお、本実施例
では屈曲部28を十字状に形成したが、この屈曲部28
を多数形成することも可能である。
FIGS. 17 and 18 show the eleventh embodiment. In this embodiment, the mounting area 27 of the thermoelectric conversion element group 3 with respect to the heat radiating substrate 4 is divided into four sides with reference to the center of the heat radiating substrate 4. A bent portion 28 having a mountain-shaped cross section is formed between the attachment regions 27. The bent portion 28 may be continuous in a rib shape as shown in the figure or may be intermittent. The bent portion 28 may project toward the thermoelectric conversion element group 3 side, or may 3 may protrude toward the opposite side. In the present embodiment, the bent portion 28 is formed in a cross shape.
Can be formed in large numbers.

【0046】図19は第12実施例を示す図で、この例
では放熱側基板4の熱電変換素子群3の取付け面とは反
対側の面に、例えば金網、エキスバンデットメタル、パ
ンチングメタルなどの開口率が大きくて薄い多孔性熱伝
導体29がスポット溶接などによって取付けられてい
る。
FIG. 19 is a view showing a twelfth embodiment. In this embodiment, for example, a wire mesh, an expanded metal, a punching metal or the like is provided on the surface of the heat radiation side substrate 4 opposite to the surface on which the thermoelectric conversion element group 3 is mounted. A thin porous heat conductor 29 having a large aperture ratio is attached by spot welding or the like.

【0047】前記第11実施例ならびに第12実施例の
ように、放熱側基板4に屈曲部28を形成したり、ある
いは多孔性熱伝導体29を取りつけることにより、放熱
側基板4の表面近傍における水21の流れが乱流とな
り、そのため放熱側基板4に対する水21の熱吸収効率
が高くなる。
As in the eleventh embodiment and the twelfth embodiment, the bent portion 28 is formed on the heat-radiating substrate 4 or the porous heat conductor 29 is attached to the heat-radiating substrate 4 so that the vicinity of the surface of the heat-radiating substrate 4 can be reduced. The flow of the water 21 becomes turbulent, and the heat absorption efficiency of the water 21 with respect to the heat radiation side substrate 4 increases.

【0048】なお、前記屈曲部28ならびに多孔性熱伝
導体29は、放熱基板4の周辺のシール部分までは延び
ていない。
The bent portion 28 and the porous heat conductor 29 do not extend to the sealing portion around the heat radiating substrate 4.

【0049】前記実施例では熱移動媒体として水を使用
したが、本発明はこれに限られるものではなく、水以外
に例えば不凍液など他の液体を使用することもできる。
Although water is used as the heat transfer medium in the above embodiments, the present invention is not limited to this, and other liquids such as antifreeze liquid may be used in addition to water.

【0050】前記実施例では金属製の基板を使用した
が、本発明はこれに限られるものではなく、例えばアル
ミナなどのセラミックや窒化アルミニウムなどを使用す
ることもできる。
Although a metal substrate is used in the above embodiment, the present invention is not limited to this, and a ceramic such as alumina or aluminum nitride may be used.

【0051】前記実施例では放熱側基体に熱移動媒体を
接触させる場合について説明したが、前述の実施例に基
づいて吸熱側基体に熱移動媒体を接触させることも可能
である。
In the above embodiment, the case where the heat transfer medium is brought into contact with the heat radiation side substrate has been described, but it is also possible to bring the heat transfer medium into contact with the heat absorption side substrate based on the above-mentioned embodiment.

【0052】前記実施例では電子冷却装置の場合につい
て説明したが、本発明は熱発電装置にも適用可能であ
る。
Although the case of the electronic cooling device has been described in the above embodiment, the present invention is also applicable to a thermoelectric generator.

【0053】[0053]

【発明の効果】図20は熱コンダクタンス特性で、同図
の横軸に給水ポンプへの一定量の投入電力で熱電変換装
置に流れる水の流量(圧損ΔP×流速Gw)を、縦軸に
熱コンダクタンスを、それぞれとっている。図中の△印
の曲線は図2に示す本発明の実施例の熱電変換装置、■
印の曲線は図14に示す本発明の実施例の熱電変換装
置、◆印の曲線は図15に示す本発明の実施例の熱電変
換装置、〇印の曲線は図21、図22に示す従来の熱電
変換装置の特性である。
FIG. 20 shows the thermal conductance characteristics. The horizontal axis of FIG. 20 represents the flow rate of water (pressure loss ΔP × flow velocity Gw) flowing in the thermoelectric conversion device with a fixed amount of power supplied to the water supply pump, and the vertical axis represents heat. Each conductance is taken. The curve marked with Δ in the figure is the thermoelectric conversion device of the embodiment of the present invention shown in FIG.
The curve marked with ◯ is the thermoelectric converter of the embodiment of the present invention shown in FIG. 14, the curve marked with ◆ is the thermoelectric converter of the embodiment of the present invention shown in FIG. 15, and the curves marked with ◯ are the conventional ones shown in FIGS. It is a characteristic of the thermoelectric conversion device.

【0054】従来の熱電変換装置は図22に示すように
供給管107から排出管108にかけての水105の流
路が狭く、しかも複数回蛇行して距離が長いことから、
水105の圧損が大きい。また水105が放熱側絶縁基
板101の表面と平行になってほぼ層流状態で流れてい
るため、放熱側絶縁基板101から水105への熱伝達
が余り良くないことから、〇印の曲線に示すように熱コ
ンダクタンスが小さい。
In the conventional thermoelectric conversion device, as shown in FIG. 22, the flow path of the water 105 from the supply pipe 107 to the discharge pipe 108 is narrow, and moreover, it meanders a plurality of times and has a long distance.
The pressure loss of the water 105 is large. Further, since the water 105 flows in a laminar flow state in parallel with the surface of the heat radiation side insulating substrate 101, the heat transfer from the heat radiation side insulating substrate 101 to the water 105 is not so good. As shown, the thermal conductance is small.

【0055】これに較べて本発明の各実施例のものは、
放熱側基板4の伝熱面に対して水21を衝突するように
供給して放熱側基板4から熱を奪い取るようになってお
り、しかも水21の流路長が従来のものに比較して短
く、圧損が小さいことから、熱コンダクタンスが大き
く、優れた特性を有している。
On the other hand, in each of the embodiments of the present invention,
Water 21 is supplied so as to collide with the heat transfer surface of the heat radiation side substrate 4 to remove heat from the heat radiation side substrate 4, and the flow path length of the water 21 is larger than that of the conventional one. Since it is short and has a small pressure loss, it has a large thermal conductance and excellent characteristics.

【0056】本発明は前述したように、基体の面に対し
て液状熱移動媒体を衝突させるもので、液状熱移動媒体
の基体と接する状態が確実に乱流となっているため、熱
の移動が効率的になされ、その結果、装置全体としての
熱交換能力が高められ、性能的に優れている。
As described above, in the present invention, the liquid heat transfer medium is made to collide with the surface of the substrate, and since the state in which the liquid heat transfer medium is in contact with the substrate is surely a turbulent flow, heat transfer is performed. Is efficiently performed, and as a result, the heat exchange capacity of the entire apparatus is enhanced and the performance is excellent.

【0057】また前記実施例のように、基体として電気
絶縁薄膜を有する金属基体を使用すると、アルミナなど
の基体に較べて熱抵抗が極端に少ないから、さらに熱交
換能力が高められる。
When a metal substrate having an electrically insulating thin film is used as the substrate as in the above-mentioned embodiment, the heat resistance is extremely smaller than that of the substrate made of alumina or the like, so that the heat exchange capacity can be further enhanced.

【0058】さらに前記実施例のように、供給手段の基
体と対向する側にその基体のほぼ全面に臨む空間が形成
されて、基体の面に衝突した液状熱移動媒体がこの空間
で拡散されるようにすれば、液状熱移動媒体が基体の表
面近傍において広い領域にわたって素早く拡散するた
め、圧損が少なくなり、さらに熱交換能力が高められ
る。
Further, as in the above-mentioned embodiment, a space facing substantially the entire surface of the base is formed on the side of the supply means facing the base, and the liquid heat transfer medium that collides with the surface of the base is diffused in this space. By doing so, the liquid heat transfer medium diffuses quickly over a wide area in the vicinity of the surface of the substrate, so that the pressure loss is reduced and the heat exchange capacity is further enhanced.

【0059】さらにまた前記実施例のように、供給手段
の熱移動媒体衝突経路上に、上流側から下流側に向けて
扁平状の第1空間と、複数の供給孔と、前記基体のほぼ
全面に臨む扁平状の第2空間とが連通するように設けら
れ、前記第1空間に流入した液状熱移動媒体が各供給孔
から分散した状態で基体の面に向けて噴射され、基体面
に衝突した液状熱移動媒体が第2空間で拡散されるよう
に構成すれば、熱移動媒体の基体までの距離を従来のも
のに比較して短く、しかも圧損を低くおさえることがで
きるから、さらに熱交換能力が高められるなどの利点を
有している。
Furthermore, as in the above-described embodiment, the flat first space from the upstream side to the downstream side, the plurality of supply holes, and the substantially entire surface of the substrate are provided on the heat transfer medium collision path of the supply means. The liquid heat transfer medium that has flowed into the first space is jetted toward the surface of the base body in a dispersed state from the supply holes and collides with the base surface. If the liquid heat transfer medium is configured to be diffused in the second space, the distance of the heat transfer medium to the substrate can be made shorter than that of the conventional one, and the pressure loss can be suppressed. It has advantages such as increased ability.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1実施例に係る熱電変換装置の斜視
図である。
FIG. 1 is a perspective view of a thermoelectric converter according to a first embodiment of the present invention.

【図2】その熱電変換装置の縦断面図である。FIG. 2 is a longitudinal sectional view of the thermoelectric converter.

【図3】図2A−A線上の断面図である。FIG. 3 is a sectional view taken along the line AA of FIG. 2;

【図4】その熱電変換装置に用いるカバー部材の平面図
である。
FIG. 4 is a plan view of a cover member used for the thermoelectric conversion device.

【図5】そのカバー部材の断面図である。FIG. 5 is a sectional view of the cover member.

【図6】その熱電変換装置に用いる分散部材の平面図で
ある。
FIG. 6 is a plan view of a dispersion member used in the thermoelectric conversion device.

【図7】図6B−B線上の断面図である。FIG. 7 is a cross-sectional view taken along the line BB of FIG. 6;

【図8】本発明の第2実施例に係るカバー部材の断面図
である。
FIG. 8 is a sectional view of a cover member according to a second embodiment of the present invention.

【図9】本発明の第3実施例に係る熱電変換装置の一部
を断面にした底面図である。
FIG. 9 is a bottom view in which a part of a thermoelectric conversion device according to a third embodiment of the present invention is shown in section.

【図10】本発明の第4実施例に係る熱電変換装置の一
部を断面にした底面図である。
FIG. 10 is a bottom view in which a part of a thermoelectric converter according to a fourth embodiment of the present invention is shown in cross section.

【図11】本発明の第5実施例に係る熱電変換装置の一
部を断面にした底面図である。
FIG. 11 is a bottom view in which a part of a thermoelectric converter according to a fifth embodiment of the present invention is sectioned.

【図12】本発明の第6実施例に係る熱電変換装置の一
部を断面にした底面図である。
FIG. 12 is a bottom view of a part of a thermoelectric conversion device according to a sixth embodiment of the present invention in section.

【図13】本発明の第7実施例に係る熱電変換装置の一
部を断面にした底面図である。
FIG. 13 is a bottom view showing a cross section of a part of a thermoelectric conversion device according to a seventh embodiment of the present invention.

【図14】本発明の第8実施例に係る熱電変換装置の断
面図である。
FIG. 14 is a sectional view of a thermoelectric converter according to an eighth embodiment of the present invention.

【図15】本発明の第9実施例に係る熱電変換装置の断
面図である。
FIG. 15 is a sectional view of a thermoelectric converter according to a ninth embodiment of the present invention.

【図16】本発明の第10実施例に係る熱電変換装置の
供給孔(給水管部)の一部拡大断面図である。
FIG. 16 is a partially enlarged sectional view of a supply hole (water supply pipe portion) of the thermoelectric conversion device according to the tenth embodiment of the present invention.

【図17】本発明の第11実施例に係る熱電変換装置に
用いる放熱側基板の平面図である。
FIG. 17 is a plan view of a heat radiation side substrate used in a thermoelectric conversion device according to an eleventh embodiment of the present invention.

【図18】その放熱側基板の一部拡大断面図である。FIG. 18 is a partially enlarged cross-sectional view of the heat dissipation side substrate.

【図19】本発明の第12実施例に係る熱電変換装置に
用いる放熱側基板の断面図である。
FIG. 19 is a sectional view of a heat radiation side substrate used in a thermoelectric converter according to a twelfth embodiment of the present invention.

【図20】各熱電変換装置の熱コンダクタンス特性図で
ある。
FIG. 20 is a thermal conductance characteristic diagram of each thermoelectric conversion device.

【図21】従来の熱電変換装置の縦断面図である。FIG. 21 is a vertical cross-sectional view of a conventional thermoelectric conversion device.

【図22】図21X−X線上の断面図である。FIG. 22 is a sectional view taken along line XX-X in FIG.

【符号の説明】[Explanation of symbols]

1 吸熱部材 2 吸熱側基板 3 熱電変換素子群 4 放熱側基板 5 支持枠体 6 カバー部材 7 分散部材 8 給水管部 9 排水管部 10 周壁 11 空間 12 凹部 13 壁部 14 つば部 15 排出穴 16 供給孔 17 第1空間 18 排水路 19 第2空間 20 集水路 21 水 22 管体 23 ガイド部 24 突出部 25 上部材 26 下部材 27 取付け領域 28 屈曲部 29 多孔質体 1 Heat Absorption Member 2 Heat Absorption Side Substrate 3 Thermoelectric Conversion Element Group 4 Radiation Side Substrate 5 Support Frame 6 Cover Member 7 Dispersion Member 8 Water Supply Pipe Section 9 Drainage Pipe Section 10 Circumferential Wall 11 Space 12 Recessed Section 13 Wall Section 14 Collar Section 15 Discharge Hole 16 Supply hole 17 First space 18 Drainage channel 19 Second space 20 Water collection channel 21 Water 22 Tubular body 23 Guide portion 24 Projection portion 25 Upper member 26 Lower member 27 Mounting area 28 Bent portion 29 Porous body

───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐藤 一也 北海道登別市柏木町3丁目36番83号 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kazuya Sato 3-36-83 Kashiwagi-cho, Noboribetsu-shi, Hokkaido

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 N型半導体層ならびにP型半導体層を支
持する基体の半導体層支持面と反対側の面に対して液状
熱移動媒体を衝突するように、前記液状熱移動媒体を供
給する供給手段を設けたことを特徴とする熱電変換装
置。
1. A supply for supplying the liquid heat transfer medium so that the liquid heat transfer medium collides with a surface of a substrate supporting the N-type semiconductor layer and the P-type semiconductor layer opposite to the semiconductor layer supporting surface. A thermoelectric conversion device comprising means.
【請求項2】 請求項1記載において、前記基体が電気
絶縁薄膜を有する金属基体であることを特徴とする熱電
変換装置。
2. The thermoelectric conversion device according to claim 1, wherein the base is a metal base having an electrically insulating thin film.
【請求項3】 請求項1記載において、前記供給手段の
前記基体と対向する側にその基体のほぼ全面に臨む空間
が形成されて、基体の面に衝突した前記液状熱移動媒体
がこの空間で拡散されることを特徴とする熱電変換装
置。
3. The substrate according to claim 1, wherein a space is formed on a side of the supply means facing the substrate, and the space faces substantially the entire surface of the substrate, and the liquid heat transfer medium colliding with the surface of the substrate is formed in this space. A thermoelectric conversion device characterized by being diffused.
【請求項4】 請求項1記載において、前記供給手段の
熱移動媒体衝突経路上に、上流側から下流側に向けて扁
平状の第1空間と、複数の供給孔と、前記基体のほぼ全
面に臨む扁平状の第2空間とが連通するように設けら
れ、 前記第1空間に流入した液状熱移動媒体が各供給孔から
分散した状態で基体の面に向けて噴射され、基体面に衝
突した液状熱移動媒体が第2空間で拡散されることを特
徴とする熱電変換装置。
4. The first space having a flat shape from the upstream side to the downstream side, a plurality of supply holes, and substantially the entire surface of the base on the heat transfer medium collision path of the supply means. The liquid heat transfer medium flowing into the first space is jetted toward the surface of the base body in a dispersed state from the supply holes and collides with the base body surface. The thermoelectric conversion device, wherein the liquid heat transfer medium is diffused in the second space.
JP16247795A 1995-06-28 1995-06-28 Thermoelectric converter Expired - Fee Related JP3560391B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16247795A JP3560391B2 (en) 1995-06-28 1995-06-28 Thermoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16247795A JP3560391B2 (en) 1995-06-28 1995-06-28 Thermoelectric converter

Publications (2)

Publication Number Publication Date
JPH0918059A true JPH0918059A (en) 1997-01-17
JP3560391B2 JP3560391B2 (en) 2004-09-02

Family

ID=15755369

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3560391B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10246531A (en) * 1997-03-03 1998-09-14 Eco Touenteii One:Kk Thermoelectric conversion device
EP0967665A4 (en) * 1997-12-25 2000-08-23 Eco 21 Inc Thermoelectric converter
JP2007184349A (en) * 2006-01-05 2007-07-19 T Rad Co Ltd Water-cooled heat sink
WO2010026266A1 (en) * 2008-09-08 2010-03-11 Bhp Billiton Aluminium Technologies Limited Thermoelectric device
WO2010084718A1 (en) * 2009-01-21 2010-07-29 財団法人電力中央研究所 Packaged thermoelectric conversion module
JP2011163751A (en) * 2010-02-12 2011-08-25 Micro Base Technology Corp Cooling device, and cooling-radiating system having the same
JP2012142577A (en) * 2011-01-05 2012-07-26 Toyota Motor Engineering & Manufacturing North America Inc Cold plate assembly and power electronics module
JP2014005960A (en) * 2012-06-22 2014-01-16 Orion Mach Co Ltd Heat exchange device
JP2014183072A (en) * 2013-03-18 2014-09-29 Fujitsu Ltd Electronic device and heat receiver
JP2015520836A (en) * 2012-04-13 2015-07-23 エーバーシュペッヒャー・エグゾースト・テクノロジー・ゲーエムベーハー・ウント・コンパニー・カーゲー Heat exchanger with thermoelectric generator
KR102036673B1 (en) * 2018-07-20 2019-10-25 최병규 Cooling Module and pusher assembly of handler for testing semiconductor elements having it
JP2021526311A (en) * 2018-05-29 2021-09-30 オックスフォード・ユニバーシティ・イノベイション・リミテッド Jet collision cooling system and method
CN115804269A (en) * 2020-06-18 2023-03-14 Lg伊诺特有限公司 Power generation device
JP2023166889A (en) * 2022-05-10 2023-11-22 パナソニックIpマネジメント株式会社 Cooling device

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5991765U (en) * 1982-12-13 1984-06-21 小松エレクトロニクス株式会社 thermoelectric module
JPH05259332A (en) * 1992-03-11 1993-10-08 Nec Corp Cooling structure of integrated circuit
JPH05315489A (en) * 1992-05-08 1993-11-26 Fuji Electric Co Ltd Liquid cooling system for electronic devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5991765U (en) * 1982-12-13 1984-06-21 小松エレクトロニクス株式会社 thermoelectric module
JPH05259332A (en) * 1992-03-11 1993-10-08 Nec Corp Cooling structure of integrated circuit
JPH05315489A (en) * 1992-05-08 1993-11-26 Fuji Electric Co Ltd Liquid cooling system for electronic devices

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10246531A (en) * 1997-03-03 1998-09-14 Eco Touenteii One:Kk Thermoelectric conversion device
EP0967665A4 (en) * 1997-12-25 2000-08-23 Eco 21 Inc Thermoelectric converter
JP2007184349A (en) * 2006-01-05 2007-07-19 T Rad Co Ltd Water-cooled heat sink
WO2010026266A1 (en) * 2008-09-08 2010-03-11 Bhp Billiton Aluminium Technologies Limited Thermoelectric device
JP5432927B2 (en) * 2009-01-21 2014-03-05 一般財団法人電力中央研究所 Package thermoelectric conversion module
WO2010084718A1 (en) * 2009-01-21 2010-07-29 財団法人電力中央研究所 Packaged thermoelectric conversion module
JP2011163751A (en) * 2010-02-12 2011-08-25 Micro Base Technology Corp Cooling device, and cooling-radiating system having the same
JP2012142577A (en) * 2011-01-05 2012-07-26 Toyota Motor Engineering & Manufacturing North America Inc Cold plate assembly and power electronics module
JP2015520836A (en) * 2012-04-13 2015-07-23 エーバーシュペッヒャー・エグゾースト・テクノロジー・ゲーエムベーハー・ウント・コンパニー・カーゲー Heat exchanger with thermoelectric generator
JP2014005960A (en) * 2012-06-22 2014-01-16 Orion Mach Co Ltd Heat exchange device
JP2014183072A (en) * 2013-03-18 2014-09-29 Fujitsu Ltd Electronic device and heat receiver
JP2021526311A (en) * 2018-05-29 2021-09-30 オックスフォード・ユニバーシティ・イノベイション・リミテッド Jet collision cooling system and method
KR102036673B1 (en) * 2018-07-20 2019-10-25 최병규 Cooling Module and pusher assembly of handler for testing semiconductor elements having it
CN115804269A (en) * 2020-06-18 2023-03-14 Lg伊诺特有限公司 Power generation device
JP2023166889A (en) * 2022-05-10 2023-11-22 パナソニックIpマネジメント株式会社 Cooling device

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