JPH09181977A - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JPH09181977A JPH09181977A JP7334734A JP33473495A JPH09181977A JP H09181977 A JPH09181977 A JP H09181977A JP 7334734 A JP7334734 A JP 7334734A JP 33473495 A JP33473495 A JP 33473495A JP H09181977 A JPH09181977 A JP H09181977A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- charge amount
- state image
- image sensor
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Transforming Light Signals Into Electric Signals (AREA)
Abstract
(57)【要約】
【課題】 固体撮像素子自体の正確な温度に応じて固体
撮像素子の固定パターンノイズを除去した画質の良い固
体撮像装置を実現する。
【解決手段】 固体撮像素子１の暗電流の対数値が温度
に比例することから、信号処理およびデジタル変換され
た固体撮像装置１の出力を用いて遅延手段１３および減
算手段１１により、固体撮像装置１の暗電流を計測し、
その計測値に基づいて記憶手段８に記憶していた最大蓄
積可能電荷量に対応するデータを補正し、その補正した
データを用いてノイズ除去手段６で出力を修正すること
により、温度によって固定パターンノイズの変化する固
体撮像素子１を用いても、固体撮像素子自体の正確な温
度に応じて固体撮像素子の固定パターンノイズを除去す
ることができ、固定パターンノイズによる画質劣化のな
い画像を得ることができる。
(57) Abstract: A solid-state imaging device with good image quality is realized by removing fixed pattern noise of the solid-state imaging device according to the accurate temperature of the solid-state imaging device itself. SOLUTION: Since the logarithmic value of the dark current of the solid-state imaging device 1 is proportional to the temperature, the output of the solid-state imaging device 1 which has been subjected to signal processing and digital conversion is used to delay the solid-state imaging device by a delay means 13 and a subtraction means 11. Measure the dark current of 1,
Based on the measured value, the data corresponding to the maximum storable charge amount stored in the storage unit 8 is corrected, and the output is corrected by the noise removing unit 6 using the corrected data, so that a fixed pattern is obtained depending on the temperature. Even if the solid-state image sensor 1 with varying noise is used, the fixed pattern noise of the solid-state image sensor can be removed according to the accurate temperature of the solid-state image sensor itself, and an image without image quality deterioration due to the fixed pattern noise can be obtained. You can
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、映像光を結像し
それを電気信号に変換する固体撮像装置に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device for forming image light and converting it into an electric signal.
【０００２】[0002]
【従来の技術】図５は第１の従来例の固体撮像装置の構
成を示すブロック図である。図５において、１は固体撮
像素子、２は信号処理手段、３はアナログ−デジタル変
換手段、４は撮像素子制御手段である。図５の固体撮像
装置において、固体撮像素子１は、一撮像期間毎に入射
した光量に応じて内部に電荷を蓄積する。撮像素子制御
手段４は、固体撮像素子１が蓄積した電荷量の大きさを
示す信号を出力するとともに電荷の蓄積量を０にリセッ
トするように、固体撮像素子１を動作制御する。固体撮
像素子１からの出力信号は信号処理手段２でノイズ除
去、ガンマ補正、増幅等の処理がなされた後、アナログ
−デジタル変換手段３に入力され、デジタル値に変換さ
れて出力される。2. Description of the Related Art FIG. 5 is a block diagram showing a configuration of a first conventional solid-state image pickup device. In FIG. 5, 1 is a solid-state image pickup device, 2 is a signal processing unit, 3 is an analog-digital conversion unit, and 4 is an image pickup device control unit. In the solid-state imaging device of FIG. 5, the solid-state imaging device 1 accumulates electric charges inside according to the amount of incident light for each imaging period. The image sensor control means 4 outputs a signal indicating the amount of charge accumulated by the solid-state image sensor 1 and controls the operation of the solid-state image sensor 1 so as to reset the accumulated charge amount to zero. The output signal from the solid-state image pickup device 1 is subjected to noise removal, gamma correction, amplification and other processing by the signal processing means 2, and then input to the analog-digital conversion means 3 where it is converted into a digital value and output.
【０００３】図５における固体撮像素子１の一撮像期間
内に蓄積される電荷量と電荷蓄積時間との関係を図６に
示し、一撮像期間内に蓄積される電荷量と入射した光量
との関係を図７に示す。FIG. 6 shows the relationship between the amount of charge accumulated in one image pickup period and the charge accumulation time of the solid-state image pickup device 1 shown in FIG. 5, and shows the relationship between the amount of charge accumulated in one image pickup period and the amount of incident light. The relationship is shown in FIG.
【０００４】[0004]
【発明が解決しようとする課題】図５に示す構成では、
固体撮像素子１の持つ画素位置における電荷蓄積特性に
より、撮像した画像は固定パターンノイズが含まれる画
質の悪い画像となる。固定パターンノイズは、固体撮像
素子１の最大蓄積可能電荷量の画素毎のばらつきであ
り、固体撮像素子１の持つ画素位置における電荷蓄積特
性は、固体撮像素子１自体の温度によって変化し、固定
パターンノイズの除去のために温度計測手段（温度セン
サ）を用いた固体撮像装置が提案されている。この提案
例を第２の従来例の固体撮像装置として、図８に示す。In the configuration shown in FIG.
Due to the charge storage characteristics of the solid-state image sensor 1 at the pixel position, the captured image becomes an image with poor pattern quality including fixed pattern noise. The fixed pattern noise is a variation in the maximum storable charge amount of the solid-state image pickup device 1 for each pixel, and the charge storage characteristic at the pixel position of the solid-state image pickup device 1 changes depending on the temperature of the solid-state image pickup device 1 itself. A solid-state imaging device using a temperature measuring unit (temperature sensor) for removing noise has been proposed. This proposed example is shown in FIG. 8 as a second conventional solid-state imaging device.
【０００５】図８は第２の従来例の固体撮像装置の構成
を示すブロック図である。図８において、１は固体撮像
素子、２は信号処理手段、３はアナログ−デジタル変換
手段、４は撮像素子制御手段、５は蓄積電荷切替手段、
６はノイズ除去手段、７は比較手段、８は記憶手段、９
は温度センサ、１０は記憶手段、１２は加算手段を示し
ている。図８において、固体撮像素子１、信号処理手段
２、アナログ−デジタル変換手段３、撮像素子制御手段
４は、第１の従来例の図５に示したものと同じである。FIG. 8 is a block diagram showing the structure of a second conventional solid-state image pickup device. In FIG. 8, 1 is a solid-state image sensor, 2 is a signal processing unit, 3 is an analog-digital conversion unit, 4 is an image sensor control unit, 5 is an accumulated charge switching unit,
6 is noise removal means, 7 is comparison means, 8 is storage means, 9
Is a temperature sensor, 10 is a storage means, and 12 is an addition means. In FIG. 8, the solid-state imaging device 1, the signal processing unit 2, the analog-digital conversion unit 3, and the imaging device control unit 4 are the same as those shown in FIG. 5 of the first conventional example.
【０００６】また、図８の固体撮像素子１において、一
撮像期間内に蓄積される電荷量と電荷蓄積時間との関係
を図９の実線Ａで示し、一撮像期間内に蓄積される電荷
量と入射した光量との関係を図１０の実線Ｂで示す。な
お、図９，図１０の破線ａ，ｂは、比較のため図５に示
す第１の従来例の固体撮像装置の特性を示したものであ
り、図６，図７と同等のものである。Further, in the solid-state image pickup device 1 of FIG. 8, the relationship between the charge amount accumulated in one image pickup period and the charge accumulation time is shown by a solid line A in FIG. 9, and the charge amount accumulated in one image pickup period is shown. The solid line B in FIG. 10 shows the relationship between the incident light quantity and the incident light quantity. Note that broken lines a and b in FIGS. 9 and 10 show characteristics of the first conventional solid-state imaging device shown in FIG. 5 for comparison, and are equivalent to FIGS. 6 and 7. .
【０００７】蓄積電荷切替手段５は、固体撮像素子１の
ＯＦＤ（オーバーフロードレイン）制御のために固体撮
像素子１に与える電位（Ｖsub ）を、図９に示すよう
に、一撮像期間内のある時間Ｔｃで変えることによっ
て、一撮像期間内の最初から時間Ｔｃまでの固体撮像素
子１の蓄積可能電荷量は第１の電荷量Ｑsat1（＞０）で
あり、時間Ｔｃ後は第２の電荷量Ｑsat2（＞Ｑsat1）に
切替わるように、撮像素子制御手段４の出力信号に変更
を加えて出力する機能を持つ。The accumulated charge switching means 5 sets the potential (Vsub) applied to the solid-state image pickup device 1 for controlling the OFD (overflow drain) of the solid-state image pickup device 1 to a certain time within one image pickup period as shown in FIG. By changing with Tc, the storable charge amount of the solid-state image sensor 1 from the beginning to the time Tc in one image pickup period is the first charge amount Qsat1 (> 0), and after the time Tc, the second charge amount Qsat2. It has a function of changing and outputting the output signal of the image pickup device control means 4 so as to switch to (> Qsat1).
【０００８】記憶手段８には、固体撮像素子１の蓄積可
能電荷量をＱsat1に設定した場合、実際に蓄積される電
荷量をアナログ−デジタル変換したデータが記憶されて
おり、アナログ−デジタル変換手段３から出力されるデ
ータに対応する画素と、記憶手段８から出力されるデー
タに対応する画素とが同じになるように、撮像素子制御
手段４によって動作制御される。When the storable charge amount of the solid-state image pickup device 1 is set to Qsat1, the storage unit 8 stores data obtained by analog-digital conversion of the actually stored charge amount, and the analog-digital conversion unit. The operation is controlled by the image sensor control unit 4 so that the pixel corresponding to the data output from 3 and the pixel corresponding to the data output from the storage unit 8 become the same.
【０００９】温度センサ９は固体撮像素子１またはその
周辺の温度を測定し、記憶手段１０は保持している変換
表に基づいて、温度センサ９から入力された温度データ
に対応する補正係数を出力する。記憶手段１０から出力
された補正係数と記憶手段８から出力されたデータは加
算手段１２において加算され、比較手段７には加算手段
１２の加算結果が入力される。比較手段７は、アナログ
−デジタル変換手段３と加算手段１２から入力されたデ
ータの大きさを比較し、その結果を出力する機能を持
つ。The temperature sensor 9 measures the temperature of the solid-state image pickup device 1 or its surroundings, and the storage means 10 outputs a correction coefficient corresponding to the temperature data input from the temperature sensor 9 based on the conversion table held therein. To do. The correction coefficient output from the storage unit 10 and the data output from the storage unit 8 are added by the addition unit 12, and the addition result of the addition unit 12 is input to the comparison unit 7. The comparison means 7 has a function of comparing the sizes of the data input from the analog-digital conversion means 3 and the addition means 12 and outputting the result.
【００１０】ノイズ除去手段６は、比較手段７から入力
した比較結果に基づいて、アナログ−デジタル変換手段
３の出力が加算手段１２の出力より小さい場合は、アナ
ログ−デジタル変換手段３から入力したデータをそのま
ま出力し、アナログ−デジタル変換手段３の出力が加算
手段１２の出力以上の場合は、加算手段１２の出力デー
タを基準にしてアナログ−デジタル変換手段３からの入
力データを補正して出力する。When the output of the analog-digital conversion means 3 is smaller than the output of the addition means 12 based on the comparison result input from the comparison means 7, the noise removal means 6 outputs the data input from the analog-digital conversion means 3. Is output as it is, and when the output of the analog-digital converting means 3 is equal to or more than the output of the adding means 12, the input data from the analog-digital converting means 3 is corrected and output based on the output data of the adding means 12. .
【００１１】図８の固体撮像装置では、固体撮像素子１
の蓄積可能電荷量を第１の電荷量Ｑsat1に設定した場合
に、実際に蓄積される電荷量が、固体撮像素子１または
固体撮像素子１の周辺温度によって変化したとき、記憶
手段８に記憶されているデータはノイズ除去手段６にお
ける基準値としての意味をなさなくなるため、温度セン
サ９、記憶手段１０、加算手段１２によって、記憶手段
８に記憶されているデータを温度特性に基づいて補正し
ている。In the solid-state image pickup device shown in FIG.
When the storable charge amount of is set to the first charge amount Qsat1, when the actually stored charge amount changes depending on the solid-state image sensor 1 or the ambient temperature of the solid-state image sensor 1, it is stored in the storage unit 8. Since the data stored in the noise removal means 6 does not serve as a reference value, the temperature sensor 9, the storage means 10, and the addition means 12 correct the data stored in the storage means 8 based on the temperature characteristics. There is.
【００１２】このように第２の従来例では、固体撮像素
子１の持つ画素位置における電荷蓄積特性が固体撮像素
子１自体の温度によって変化するため、温度センサ９で
固体撮像素子１の温度を測定し、記憶手段８に記憶され
ているデータを温度特性に基づいて補正することによ
り、固体撮像素子１の固定パターンノイズを除去して画
質劣化を防止している。As described above, in the second conventional example, since the charge storage characteristic at the pixel position of the solid-state image sensor 1 changes depending on the temperature of the solid-state image sensor 1 itself, the temperature sensor 9 measures the temperature of the solid-state image sensor 1. Then, by correcting the data stored in the storage means 8 based on the temperature characteristic, the fixed pattern noise of the solid-state image pickup device 1 is removed to prevent the image quality deterioration.
【００１３】しかしながら、第２の従来例で用いている
温度センサ９は、固体撮像素子１のパッケージ表面の温
度を測定するものであり、固体撮像素子１のパッケージ
表面の温度は周囲温度に依存し、例えば周囲温度が変化
しても固体撮像素子１自体の温度は一定の場合もあり、
固体撮像素子１自体の温度と温度センサ９により計測し
た温度とが異なる場合があった。このように温度センサ
９では、固体撮像素子１の正確な温度を計測することが
できず、したがって、固体撮像素子１自体の温度とは異
なる計測温度を用いて、記憶手段８に記憶されているデ
ータを補正することになれば、固定パターンノイズの除
去が良好に行われず、良い画質の得られないものとな
る。However, the temperature sensor 9 used in the second conventional example measures the temperature of the package surface of the solid-state image sensor 1, and the temperature of the package surface of the solid-state image sensor 1 depends on the ambient temperature. , The temperature of the solid-state imaging device 1 itself may be constant even if the ambient temperature changes,
In some cases, the temperature of the solid-state image sensor 1 itself and the temperature measured by the temperature sensor 9 are different. As described above, the temperature sensor 9 cannot measure the accurate temperature of the solid-state image sensor 1, and therefore, the measured temperature different from the temperature of the solid-state image sensor 1 itself is used and stored in the storage unit 8. If the data is corrected, fixed pattern noise cannot be removed well, and good image quality cannot be obtained.
【００１４】この発明は、固体撮像素子自体の正確な温
度に応じて固体撮像素子の固定パターンノイズを除去
し、良好な画質の得られる固体撮像装置を提供すること
を目的とする。It is an object of the present invention to provide a solid-state image pickup device which can eliminate fixed pattern noise of the solid-state image pickup device according to the accurate temperature of the solid-state image pickup device itself and obtain a good image quality.
【００１５】[0015]
【課題を解決するための手段】請求項１記載の固体撮像
装置は、固体撮像素子と、固体撮像素子の最大蓄積可能
電荷量に対応するデータを保持する記憶手段と、固体撮
像素子の暗電流を計測する暗電流計測手段と、暗電流の
値に対応する記憶手段のデータの補正量を出力するデー
タ補正量設定手段と、最大蓄積可能電荷量に対応するデ
ータをデータの補正量を用いて補正し基準レベルとして
出力する基準レベル設定手段と、固体撮像素子の出力信
号レベルが基準レベル以上のときに制御信号を出力する
比較手段と、比較手段の制御信号に応答して基準レベル
に基づいて固体撮像素子の出力信号を補正するノイズ除
去手段とを備えている。According to a first aspect of the present invention, there is provided a solid-state image pickup device, a solid-state image pickup device, storage means for holding data corresponding to a maximum storable charge amount of the solid-state image pickup device, and a dark current of the solid-state image pickup device. Dark current measuring means, a data correction amount setting means for outputting the correction amount of the data of the storage means corresponding to the value of the dark current, and data corresponding to the maximum storable charge amount by using the correction amount of the data. A reference level setting means for correcting and outputting as a reference level, a comparing means for outputting a control signal when the output signal level of the solid-state image sensor is equal to or higher than the reference level, and a reference level based on the reference level in response to the control signal of the comparing means. Noise removal means for correcting the output signal of the solid-state image sensor.
【００１６】この構成によれば、固体撮像素子の暗電流
の対数値が温度に比例することを利用して、固体撮像素
子の出力から暗電流の計測を行い、その計測値に基づい
て最大蓄積可能電荷量に対応するデータを補正すること
により、温度によって固定パターンノイズの変化する固
体撮像素子を用いても、固体撮像素子自体の正確な温度
に応じて固体撮像素子の固定パターンノイズを除去し、
固定パターンノイズによる画質劣化のない画像を得るこ
とができる。According to this configuration, the dark current of the solid-state image sensor is proportional to the temperature, and the dark current is measured from the output of the solid-state image sensor, and the maximum accumulation is calculated based on the measured value. By correcting the data corresponding to the possible charge amount, even if a solid-state image sensor whose fixed pattern noise changes with temperature is used, the fixed pattern noise of the solid-state image sensor can be removed according to the accurate temperature of the solid-state image sensor itself. ,
It is possible to obtain an image without image quality deterioration due to fixed pattern noise.
【００１７】請求項２記載の固体撮像装置は、蓄積可能
電荷量を制御可能な固体撮像素子と、固体撮像素子の蓄
積可能電荷量を零より大きな第１の電荷量と第１の電荷
量より大きな第２の電荷量とに切替可能で、一撮像期間
内において第１の電荷量，第２の電荷量の順に切替えを
行う蓄積電荷切替手段と、固体撮像素子の第１の電荷量
に対応するデータを保持する記憶手段と、固体撮像素子
の暗電流を計測する暗電流計測手段と、暗電流の値に対
応する記憶手段のデータの補正量を出力するデータ補正
量設定手段と、第１の電荷量に対応するデータをデータ
の補正量を用いて補正し基準レベルとして出力する基準
レベル設定手段と、固体撮像素子の出力信号レベルが基
準レベル以上のときに制御信号を出力する比較手段と、
比較手段の制御信号に応答して基準レベルに基づいて固
体撮像素子の出力信号を補正するノイズ除去手段とを備
えている。According to a second aspect of the present invention, there is provided a solid-state image pickup device capable of controlling the storable charge amount, and the storable charge amount of the solid-state image pickup device is defined by a first charge amount larger than zero and a first charge amount. Corresponding to the first charge amount of the solid-state image pickup device, which is switchable to a large second charge amount, and which switches the first charge amount and the second charge amount in order within one image pickup period, and the first charge amount of the solid-state image pickup element. Storage means for holding the data to be stored, dark current measuring means for measuring the dark current of the solid-state imaging device, data correction amount setting means for outputting the correction amount of the data in the storage means corresponding to the value of the dark current, and Reference level setting means for correcting the data corresponding to the amount of electric charges of the solid-state image sensor by using the correction amount of the data and outputting the reference level; and comparing means for outputting the control signal when the output signal level of the solid-state image sensor is equal to or higher than the reference level. ,
Noise removal means for correcting the output signal of the solid-state imaging device based on the reference level in response to the control signal of the comparison means.
【００１８】この構成によれば、請求項１の構成同様、
温度によって固定パターンノイズの変化する固体撮像素
子を用いても、固体撮像素子自体の正確な温度に応じて
固体撮像素子の固定パターンノイズを除去し、固定パタ
ーンノイズによる画質劣化のない画像を得ることができ
る。さらに、一撮像期間内において第１の電荷量，第２
の電荷量の順に切替えを行う蓄積電荷切替手段を有する
ことにより、固体撮像素子のオーバーフロードレイン制
御を行うことができる。According to this structure, like the structure of claim 1,
Even if a solid-state image sensor whose fixed pattern noise changes with temperature is used, the fixed pattern noise of the solid-state image sensor is removed according to the accurate temperature of the solid-state image sensor itself, and an image without image quality deterioration due to fixed pattern noise is obtained. You can Furthermore, the first charge amount and the second charge amount are reduced within one imaging period.
By including the accumulated charge switching unit that switches in the order of the amount of electric charge, the overflow drain control of the solid-state imaging device can be performed.
【００１９】請求項３記載の固体撮像装置は、請求項２
記載の固体撮像装置において、固体撮像素子の蓄積可能
電荷量を第１の電荷量と第２の電荷量とに切替可能であ
る蓄積電荷切替手段に代えて、固体撮像素子の蓄積可能
電荷量を零と第１の電荷量と第２の電荷量とに切替可能
で、一撮像期間内において零，第１の電荷量，第２の電
荷量の順に切替えを行う蓄積電荷切替手段を設けたこと
を特徴とする。A solid-state image pickup device according to a third aspect is the second aspect.
In the solid-state imaging device described above, the storable charge amount of the solid-state image sensor is replaced with a stored charge switching unit that can switch the storable charge amount of the solid-state image sensor between the first charge amount and the second charge amount. A stored charge switching unit is provided which can switch between zero, the first charge amount, and the second charge amount, and switches in the order of zero, the first charge amount, and the second charge amount in one imaging period. Is characterized by.
【００２０】この構成によれば、請求項２の構成におい
て、蓄積電荷切替手段が固体撮像素子の蓄積可能電荷量
を、一撮像期間内において零，第１の電荷量，第２の電
荷量の順に切替えを行うことにより、固体撮像素子の撮
像時間が短くなり、フィルムカメラのシャッタスピード
を速くした場合と同じ効果が得られ、移動物体の撮像に
対し、“ぶれ”の少ない画像を得ることができる。According to this structure, in the structure of claim 2, the accumulated charge switching means sets the storable charge amount of the solid-state image pickup device to zero, the first charge amount, and the second charge amount within one image pickup period. By switching in order, the image pickup time of the solid-state image pickup device is shortened, the same effect as when the shutter speed of the film camera is increased can be obtained, and an image with less "blur" can be obtained with respect to the image pickup of a moving object. it can.
【００２１】[0021]
【発明の実施の形態】以下、この発明の実施の形態につ
いて図面を用いて説明する。図１はこの発明の第１の実
施の形態の固体撮像装置の構成を示すブロック図であ
る。図１において、１は固体撮像素子、２は信号処理手
段、３はアナログ−デジタル変換手段、４は撮像素子制
御手段、６はノイズ除去手段、７は比較手段、８は記憶
手段、１０は記憶手段（データ補正量設定手段）、１１
は減算手段（暗電流計測手段）、１２は加算手段（基準
レベル設定手段）、１３は遅延手段（暗電流計測手段）
である。なお、固体撮像素子１、信号処理手段２、アナ
ログ−デジタル変換手段３、撮像素子制御手段４、ノイ
ズ除去手段６、比較手段７、記憶手段８、記憶手段１０
および加算手段１２は、図８に示したものと同じであ
る。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing the configuration of a solid-state imaging device according to the first embodiment of the present invention. In FIG. 1, 1 is a solid-state image pickup device, 2 is a signal processing unit, 3 is an analog-digital conversion unit, 4 is an image pickup device control unit, 6 is a noise removal unit, 7 is a comparison unit, 8 is a storage unit, and 10 is a storage unit. Means (data correction amount setting means), 11
Is a subtracting means (dark current measuring means), 12 is an adding means (reference level setting means), 13 is a delaying means (dark current measuring means).
It is. In addition, the solid-state imaging device 1, the signal processing unit 2, the analog-digital conversion unit 3, the imaging device control unit 4, the noise removal unit 6, the comparison unit 7, the storage unit 8, the storage unit 10.
The addition means 12 is the same as that shown in FIG.
【００２２】図２はアナログ−デジタル変換手段３の出
力波形図である。図２において、は一水平期間、は
有効画素部の出力期間、は空送り部の出力期間を示し
ている。ここでは、有効画素部において、その画素の入
射光を遮蔽している。また、図３は固体撮像素子１の概
略構成図であり、２１はフォトダイオード、２２はＶＣ
ＣＤ（垂直方向ＣＣＤ）、２３はＨＣＣＤ（水平方向Ｃ
ＣＤ）、２４は出力アンプである。FIG. 2 is an output waveform diagram of the analog-digital conversion means 3. In FIG. 2, is a horizontal period, is an effective pixel section output period, and is an idle feed section output period. Here, in the effective pixel portion, the incident light of that pixel is blocked. Further, FIG. 3 is a schematic configuration diagram of the solid-state imaging device 1, in which 21 is a photodiode and 22 is a VC.
CD (vertical CCD), 23 is HCCD (horizontal C
CD) and 24 are output amplifiers.
【００２３】まず、図２および図３を参照しながら、こ
の発明の実施の形態におけるポイントを説明する。図２
の期間における有効画素部の出力には、図３のフォト
ダイオード２１、ＶＣＣＤ２２、ＨＣＣＤ２３および出
力アンプ２４で発生するノイズ成分を含んでおり、ま
た、図２の期間における空送り部の出力には、図３の
ＶＣＣＤ２２、ＨＣＣＤ２３および出力アンプ２４で発
生するノイズ成分を含んでいる。したがって、図２の期
間とにおける出力の差、すなわち有効画素部の出力
と空送り部の出力の差は、フォトダイオード２１におけ
るノイズ成分、すなわちフォトダイオード２１の暗電流
の大きさを示すことになる。First, the points in the embodiment of the present invention will be described with reference to FIGS. FIG.
The output of the effective pixel portion in the period of includes a noise component generated in the photodiode 21, the VCCD 22, the HCCD 23, and the output amplifier 24 of FIG. 3, and the output of the idle feeding portion in the period of FIG. It includes noise components generated in the VCCD 22, HCCD 23 and output amplifier 24 of FIG. Therefore, the difference in the output from the period shown in FIG. 2, that is, the difference in the output from the effective pixel section and the output from the idle feed section indicates the noise component in the photodiode 21, that is, the magnitude of the dark current in the photodiode 21. .
【００２４】この実施の形態では、フォトダイオード２
１の暗電流の対数値が温度に比例することを利用して、
固体撮像素子の出力（図１ではアナログ−デジタル変換
手段３の出力）から暗電流の計測を行い、その計測値に
基づいて固定パターンノイズの除去をするための係数を
修正することにより、固体撮像素子およびその周辺温度
に左右されない、良い画質の映像を得るようにしたもの
である。In this embodiment, the photodiode 2
Utilizing that the logarithmic value of the dark current of 1 is proportional to temperature,
The dark current is measured from the output of the solid-state image pickup device (the output of the analog-digital conversion means 3 in FIG. 1), and the coefficient for removing fixed pattern noise is corrected based on the measured value to obtain the solid-state image pickup. It is intended to obtain a good quality image that is not affected by the temperature of the element and its surroundings.
【００２５】さらに、図１を参照しながら第１の実施の
形態について説明する。記憶手段８には、固体撮像素子
１の固定パターンノイズに相当する電荷量をアナログ−
デジタル変換したデータ、すなわち固体撮像素子１の最
大蓄積可能電荷量に対応するデータが記憶されており、
アナログ−デジタル変換手段３から出力されるデータに
対応する画素と、記憶手段８から出力されるデータに対
応する画素とが同じになるように、撮像素子制御手段４
によって動作制御される。Further, the first embodiment will be described with reference to FIG. The storage unit 8 stores the analog charge amount corresponding to the fixed pattern noise of the solid-state image sensor 1.
Digitally converted data, that is, data corresponding to the maximum storable charge amount of the solid-state image sensor 1 is stored,
The image sensor control means 4 is arranged so that the pixels corresponding to the data output from the analog-digital conversion means 3 and the pixels corresponding to the data output from the storage means 8 become the same.
Operation is controlled by.
【００２６】減算手段１１は、アナログ−デジタル変換
手段３の出力と遅延手段１３の出力とを入力して、図２
の期間における有効画素部の出力と期間における空
送り部の出力との差、すなわち暗電流を計算し、その結
果を出力する。記憶手段１０は保持している変換表に基
づいて、減算手段１１の出力する値に対応する補正係数
を出力する。この記憶手段１０は、撮像素子制御手段４
によって記憶手段８と同様にして、動作制御される。記
憶手段１０から出力された補正係数と記憶手段８から出
力されたデータは加算手段１２において加算され、比較
手段７には加算手段１２の加算結果が入力される。The subtracting means 11 receives the output of the analog-to-digital converting means 3 and the output of the delaying means 13, and inputs the output of FIG.
The difference between the output of the effective pixel portion and the output of the idle feeding portion during the period, that is, the dark current is calculated, and the result is output. The storage means 10 outputs a correction coefficient corresponding to the value output by the subtraction means 11 based on the conversion table held therein. This storage means 10 is provided by the image sensor control means 4
The operation is controlled in the same manner as the storage means 8. The correction coefficient output from the storage unit 10 and the data output from the storage unit 8 are added by the addition unit 12, and the addition result of the addition unit 12 is input to the comparison unit 7.
【００２７】比較手段７は、アナログ−デジタル変換手
段３と加算手段１２から入力されたデータの大きさを比
較し、その結果をノイズ除去手段６へ出力する。ノイズ
除去手段６は、比較手段７から入力した比較結果に基づ
いて、アナログ−デジタル変換手段３の出力が加算手段
１２の出力より小さい場合は、アナログ−デジタル変換
手段３から入力したデータをそのまま出力し、アナログ
−デジタル変換手段３の出力が加算手段１２の出力（基
準レベル）以上の場合は、加算手段１２の出力データを
基準にしてアナログ−デジタル変換手段３からの入力デ
ータを補正して出力する。すなわち、固定パターンノイ
ズ成分の減算されたデータが出力される。The comparison means 7 compares the sizes of the data input from the analog-digital conversion means 3 and the addition means 12, and outputs the result to the noise removal means 6. When the output of the analog-digital conversion means 3 is smaller than the output of the addition means 12, based on the comparison result input from the comparison means 7, the noise removal means 6 outputs the data input from the analog-digital conversion means 3 as it is. If the output of the analog-digital conversion means 3 is equal to or higher than the output (reference level) of the addition means 12, the output data of the addition means 12 is used as a reference to correct the input data from the analog-digital conversion means 3 and output. To do. That is, the data from which the fixed pattern noise component is subtracted is output.
【００２８】図１において、固体撮像素子１の固定パタ
ーンノイズに相当するデータが記憶手段８に記憶されて
いる場合、記憶手段８に記憶されているデータは、固体
撮像素子１の温度変化によってノイズ除去手段６におけ
る基準値としての意味をなさなくなるため、記憶手段１
０、減算手段１１、加算手段１２、遅延手段１３によっ
て、記憶手段８に記憶されているデータを温度特性に基
づいて補正する。In FIG. 1, when the data corresponding to the fixed pattern noise of the solid-state image sensor 1 is stored in the storage means 8, the data stored in the storage means 8 is noisy due to the temperature change of the solid-state image sensor 1. The storage means 1 has no meaning as a reference value in the removal means 6.
The data stored in the storage unit 8 is corrected by 0, the subtraction unit 11, the addition unit 12, and the delay unit 13 based on the temperature characteristic.
【００２９】以上のようにこの第１の実施の形態によれ
ば、温度によって固定パターンノイズの変化する固体撮
像素子１を用いても、固体撮像素子１自体の正確な温度
に応じて固定パターンノイズを除去することができ、固
定パターンノイズによる画質劣化のない画像を得ること
ができる。つぎに、この発明の第２の実施の形態につい
て説明する。As described above, according to the first embodiment, even if the solid-state image pickup device 1 whose fixed pattern noise changes with temperature is used, the fixed pattern noise changes according to the accurate temperature of the solid-state image pickup device 1 itself. Can be removed, and an image without image quality deterioration due to fixed pattern noise can be obtained. Next, a second embodiment of the present invention will be described.
【００３０】図４はこの発明の第２の実施の形態の固体
撮像装置の構成を示すブロック図である。図４におい
て、１は固体撮像素子、２は信号処理手段、３はアナロ
グ−デジタル変換手段、４は撮像素子制御手段、５は蓄
積電荷切替手段、６はノイズ除去手段、７は比較手段、
８は記憶手段、１０は記憶手段（データ補正量設定手
段）、１１は減算手段（暗電流計測手段）、１２は加算
手段（基準レベル設定手段）、１３は遅延手段（暗電流
計測手段）である。この図４において、固体撮像素子
１、信号処理手段２、アナログ−デジタル変換手段３、
撮像素子制御手段４、ノイズ除去手段６、比較手段７、
記憶手段８、記憶手段１０、減算手段１１、加算手段１
２および遅延手段１３は、図１の第１の実施の形態で示
したものと同じである。FIG. 4 is a block diagram showing the structure of a solid-state image pickup device according to the second embodiment of the present invention. In FIG. 4, 1 is a solid-state image pickup device, 2 is a signal processing unit, 3 is an analog-digital conversion unit, 4 is an image pickup device control unit, 5 is an accumulated charge switching unit, 6 is a noise removing unit, 7 is a comparing unit,
Reference numeral 8 is a storage means, 10 is a storage means (data correction amount setting means), 11 is a subtraction means (dark current measuring means), 12 is an adding means (reference level setting means), and 13 is a delay means (dark current measuring means). is there. In FIG. 4, the solid-state image sensor 1, the signal processing means 2, the analog-digital conversion means 3,
Image sensor control means 4, noise removal means 6, comparison means 7,
Storage means 8, storage means 10, subtraction means 11, addition means 1
2 and the delay means 13 are the same as those shown in the first embodiment of FIG.
【００３１】蓄積電荷切替手段５は、第２の従来例（図
８）に示したものと同じで、固体撮像素子１のＯＦＤ
（オーバーフロードレイン）制御のために、固体撮像素
子１に与える電位（Ｖsub ）を、一撮像期間内のある時
間Ｔｃ（図９参照）で変えることによって、一撮像期間
内の最初から時間Ｔｃまでの固体撮像素子１の蓄積可能
電荷量は第１の電荷量Ｑsat1（＞０）であり、時間Ｔｃ
後は第２の電荷量Ｑsat2（＞Ｑsat1）に切替わるよう
に、撮像素子制御手段４の出力信号に変更を加えて出力
する機能を持つ。The accumulated charge switching means 5 is the same as that shown in the second conventional example (FIG. 8), and the OFD of the solid-state image pickup device 1 is the same.
By changing the potential (Vsub) applied to the solid-state imaging device 1 for a certain time Tc (see FIG. 9) within one imaging period for (overflow drain) control, the time from the beginning to the time Tc within one imaging period. The storable charge amount of the solid-state imaging device 1 is the first charge amount Qsat1 (> 0), and the time Tc
After that, it has a function of changing and outputting the output signal of the image sensor control means 4 so as to switch to the second charge amount Qsat2 (> Qsat1).
【００３２】記憶手段８には、固体撮像素子１の蓄積可
能電荷量を第１の電荷量Ｑsat1に設定した場合、実際に
蓄積される電荷量をアナログ−デジタル変換したデータ
が記憶されており、アナログ−デジタル変換手段３から
出力されるデータに対応する画素と、記憶手段８から出
力されるデータに対応する画素とが同じになるように、
撮像素子制御手段４によって動作制御される。When the storable charge amount of the solid-state image pickup device 1 is set to the first charge amount Qsat1, the storage means 8 stores data obtained by analog-digital conversion of the actually stored charge amount. The pixel corresponding to the data output from the analog-digital conversion means 3 and the pixel corresponding to the data output from the storage means 8 are the same,
The operation is controlled by the image sensor control means 4.
【００３３】減算手段１１は、アナログ−デジタル変換
手段３の出力と遅延手段１３の出力とを入力し、図２の
における有効画素部の出力とにおける空送り部の出
力との差、すなわち暗電流を計算し、その結果を出力す
る。記憶手段１０は保持している変換表に基づいて、減
算手段１１の出力する値に対応する補正係数を出力す
る。この記憶手段１０は、撮像素子制御手段４によって
記憶手段８と同様にして、動作制御される。記憶手段１
０から出力された補正係数と記憶手段８から出力された
データは加算手段１２において加算され、比較手段７に
は加算手段１２の加算結果が入力される。The subtracting means 11 inputs the output of the analog-digital converting means 3 and the output of the delay means 13, and the difference between the output of the effective pixel portion in FIG. 2 and the output of the idle feeding portion, that is, dark current. Is calculated and the result is output. The storage means 10 outputs a correction coefficient corresponding to the value output by the subtraction means 11 based on the conversion table held therein. The operation of the storage unit 10 is controlled by the image sensor control unit 4 in the same manner as the storage unit 8. Storage means 1
The correction coefficient output from 0 and the data output from the storage unit 8 are added by the addition unit 12, and the addition result of the addition unit 12 is input to the comparison unit 7.
【００３４】比較手段７は、アナログ−デジタル変換手
段３と加算手段１２から入力されたデータの大きさを比
較し、その結果をノイズ除去手段６へ出力する。ノイズ
除去手段６は、比較手段７から入力した比較結果に基づ
いて、アナログ−デジタル変換手段３の出力が加算手段
１２の出力より小さい場合は、アナログ−デジタル変換
手段３から入力したデータをそのまま出力し、アナログ
−デジタル変換手段３の出力が加算手段１２の出力（基
準レベル）以上の場合は、加算手段１２の出力データを
基準にしてアナログ−デジタル変換手段３からの入力デ
ータを補正して出力する。The comparing means 7 compares the sizes of the data inputted from the analog-digital converting means 3 and the adding means 12, and outputs the result to the noise removing means 6. When the output of the analog-digital conversion means 3 is smaller than the output of the addition means 12, based on the comparison result input from the comparison means 7, the noise removal means 6 outputs the data input from the analog-digital conversion means 3 as it is. If the output of the analog-digital conversion means 3 is equal to or higher than the output (reference level) of the addition means 12, the output data of the addition means 12 is used as a reference to correct the input data from the analog-digital conversion means 3 and output. To do.
【００３５】図４の固体撮像装置において、固体撮像素
子１の蓄積可能電荷量を第１の電荷量Ｑsat1に設定した
場合、実際に蓄積される電荷量は正確にＱsat1とはなら
ず、多少の誤差（実際に蓄積された電荷量とＱsat1の
差）を持つ。同様なことは第１の実施の形態（図１の固
体撮像装置）の固体撮像素子１においても発生するが、
第２の実施の形態では、この誤差を比較手段７、記憶手
段８、撮像素子制御手段４により各画素毎に検知し、さ
らに、固体撮像素子１の温度もしくはその周辺温度の変
化によって、その実際に蓄積される電荷量が変化するこ
とに対して、記憶手段１０、減算手段１１、遅延手段１
３によって補正を行ない、ノイズ除去手段６でその誤差
の大きさに応じて加算もしくは減算することにより、誤
差を除去し、Ｑsat1に揃えることができる。In the solid-state image pickup device of FIG. 4, when the storable charge amount of the solid-state image pickup element 1 is set to the first charge amount Qsat1, the actually accumulated charge amount does not become Qsat1 accurately, and a little. There is an error (difference between the actually accumulated charge amount and Qsat1). The same thing occurs in the solid-state imaging device 1 of the first embodiment (the solid-state imaging device of FIG. 1),
In the second embodiment, this error is detected for each pixel by the comparison unit 7, the storage unit 8, and the image pickup device control unit 4, and the error is actually detected by the change in the temperature of the solid-state image pickup device 1 or its ambient temperature. The storage means 10, the subtraction means 11, and the delay means 1 against the change in the amount of charge accumulated in
The correction can be performed by 3, and the noise removing means 6 can add or subtract according to the magnitude of the error to remove the error and make it equal to Qsat1.
【００３６】以上のようにこの第２の実施の形態によれ
ば、温度によって固定パターンノイズの変化する固体撮
像素子１を用いても、固体撮像素子１自体の正確な温度
に応じて固定パターンノイズを除去し、画質劣化を伴う
ことなく、ダイナミックレンジの向上を図ることができ
る。また、蓄積電荷切替手段５は、固体撮像素子１の蓄
積可能電荷量を、第１の電荷量Ｑsat1と第２の電荷量Ｑ
sat2との他に、零にも切替可能とし、一撮像期間内にお
いて零，第１の電荷量Ｑsat1，第２の電荷量Ｑsat2の順
に切替えを行うようにすることにより、固体撮像素子１
の撮像時間が短くなり、フィルムカメラのシャッタスピ
ードを速くした場合と同じ効果が得られ、移動物体の撮
像に対し、“ぶれ”の少ない画像を得ることができる。As described above, according to the second embodiment, even when the solid-state image pickup device 1 whose fixed pattern noise changes depending on temperature is used, the fixed pattern noise changes according to the accurate temperature of the solid-state image pickup device 1 itself. Can be eliminated, and the dynamic range can be improved without deteriorating the image quality. The accumulated charge switching means 5 determines the storable charge amount of the solid-state image sensor 1 as the first charge amount Qsat1 and the second charge amount Q.
In addition to sat2, switching to zero is also possible, and switching is performed in the order of zero, first charge amount Qsat1, and second charge amount Qsat2 within one image pickup period.
The image pickup time is shortened, the same effect as when the shutter speed of the film camera is increased is obtained, and an image with less "blur" can be obtained with respect to the image pickup of a moving object.
【００３７】なお、前述のように第１および第２の実施
の形態では、図８のような温度センサ９を用いていない
ため、固体撮像素子１の周囲温度に左右されず、固体撮
像素子１自体の正確な温度に応じて固定パターンノイズ
を除去した良好な画質を得ることができる。なお、この
発明は上記実施の形態に限定されるものではなく、この
発明の趣旨に基づいて種々の変形が可能であり、これら
をこの発明の範囲から除外するものではない。As described above, in the first and second embodiments, since the temperature sensor 9 as shown in FIG. 8 is not used, the solid-state image sensor 1 is not affected by the ambient temperature of the solid-state image sensor 1. It is possible to obtain good image quality by removing fixed pattern noise according to the accurate temperature of itself. The present invention is not limited to the above-described embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.
【００３８】[0038]
【発明の効果】請求項１記載の固体撮像装置は、固体撮
像素子と、固体撮像素子の最大蓄積可能電荷量に対応す
るデータを保持する記憶手段と、固体撮像素子の暗電流
を計測する暗電流計測手段と、暗電流の値に対応する記
憶手段のデータの補正量を出力するデータ補正量設定手
段と、最大蓄積可能電荷量に対応するデータをデータの
補正量を用いて補正し基準レベルとして出力する基準レ
ベル設定手段と、固体撮像素子の出力信号レベルが基準
レベル以上のときに制御信号を出力する比較手段と、比
較手段の制御信号に応答して基準レベルに基づいて固体
撮像素子の出力信号を補正するノイズ除去手段とを備え
てあり、固体撮像素子の暗電流の対数値が温度に比例す
ることを利用して、固体撮像素子の出力から暗電流の計
測を行い、その計測値に基づいて最大蓄積可能電荷量に
対応するデータを補正することにより、温度によって固
定パターンノイズの変化する固体撮像素子を用いても、
固体撮像素子自体の正確な温度に応じて固定パターンノ
イズを除去することができ、固定パターンノイズによる
画質劣化のない画像を得ることができる。According to the solid-state image pickup device of the present invention, a solid-state image pickup device, a storage means for holding data corresponding to the maximum storable charge amount of the solid-state image pickup device, and a dark current for measuring a dark current of the solid-state image pickup device. A current measuring unit, a data correction amount setting unit for outputting a correction amount of data in the storage unit corresponding to the value of the dark current, and data corresponding to the maximum storable charge amount are corrected using the correction amount of data to obtain a reference level. As a reference level setting means, a comparison means for outputting a control signal when the output signal level of the solid-state image sensor is equal to or higher than the reference level, and a solid-state image sensor based on the reference level in response to the control signal of the comparison means. The dark current is measured from the output of the solid-state image sensor by utilizing the fact that the logarithmic value of the dark current of the solid-state image sensor is proportional to the temperature. By correcting the data corresponding to the maximum storable charge amount based on the value, even by using a solid-state imaging device that changes the fixed pattern noise by temperature,
The fixed pattern noise can be removed according to the accurate temperature of the solid-state imaging device itself, and an image without image quality deterioration due to the fixed pattern noise can be obtained.
【００３９】請求項２記載の固体撮像装置は、蓄積可能
電荷量を制御可能な固体撮像素子と、固体撮像素子の蓄
積可能電荷量を零より大きな第１の電荷量と第１の電荷
量より大きな第２の電荷量とに切替可能で、一撮像期間
内において第１の電荷量，第２の電荷量の順に切替えを
行う蓄積電荷切替手段と、固体撮像素子の第１の電荷量
に対応するデータを保持する記憶手段と、固体撮像素子
の暗電流を計測する暗電流計測手段と、暗電流の値に対
応する記憶手段のデータの補正量を出力するデータ補正
量設定手段と、第１の電荷量に対応するデータをデータ
の補正量を用いて補正し基準レベルとして出力する基準
レベル設定手段と、固体撮像素子の出力信号レベルが基
準レベル以上のときに制御信号を出力する比較手段と、
比較手段の制御信号に応答して基準レベルに基づいて固
体撮像素子の出力信号を補正するノイズ除去手段とを備
えてあり、請求項１の構成同様、温度によって固定パタ
ーンノイズの変化する固体撮像素子を用いても、固体撮
像素子自体の正確な温度に応じて固定パターンノイズを
除去することができ、固定パターンノイズによる画質劣
化のない画像を得ることができる。さらに、一撮像期間
内において第１の電荷量，第２の電荷量の順に切替えを
行う蓄積電荷切替手段を有することにより、固体撮像素
子のオーバーフロードレイン制御を行うことができる。According to a second aspect of the present invention, there is provided a solid-state image pickup device capable of controlling the storable charge amount, and the storable charge amount of the solid-state image pickup device is defined by a first charge amount larger than zero and a first charge amount. Corresponding to the first charge amount of the solid-state image pickup device, which is switchable to a large second charge amount, and which switches the first charge amount and the second charge amount in order within one image pickup period, and the first charge amount of the solid-state image pickup element. Storage means for holding the data to be stored, dark current measuring means for measuring the dark current of the solid-state imaging device, data correction amount setting means for outputting the correction amount of the data in the storage means corresponding to the value of the dark current, and Reference level setting means for correcting the data corresponding to the amount of electric charges of the solid-state image sensor by using the correction amount of the data and outputting the reference level; and comparing means for outputting the control signal when the output signal level of the solid-state image sensor is equal to or higher than the reference level. ,
A solid-state image pickup device, comprising: a noise removing unit that corrects an output signal of the solid-state image pickup device based on a reference level in response to a control signal of a comparison unit, and in which fixed pattern noise changes with temperature, as in the configuration of claim 1. Even with the use of, the fixed pattern noise can be removed according to the accurate temperature of the solid-state imaging device itself, and an image without image quality deterioration due to the fixed pattern noise can be obtained. Further, by having a stored charge switching unit that switches between the first charge amount and the second charge amount in order within one image pickup period, overflow drain control of the solid-state image pickup device can be performed.
【００４０】請求項３記載の固体撮像装置は、請求項２
記載の固体撮像装置において、蓄積電荷切替手段が、固
体撮像素子の蓄積可能電荷量を零と第１の電荷量と第２
の電荷量とに切替可能で、一撮像期間内において零，第
１の電荷量，第２の電荷量の順に切替えを行うようにし
たことにより、固体撮像素子の撮像時間が短くなり、フ
ィルムカメラのシャッタスピードを速くした場合と同じ
効果が得られ、移動物体の撮像に対し、“ぶれ”の少な
い画像を得ることができる。A solid-state image pickup device according to a third aspect is the second aspect.
In the solid-state imaging device described above, the accumulated charge switching means sets the storable charge amount of the solid-state image sensor to zero, the first charge amount, and the second charge amount.
It is possible to switch the charge amount of the solid-state image sensor to 0, the first charge amount, and the second charge amount in order within one image pickup period. The same effect as when the shutter speed is increased can be obtained, and an image with less "blurring" can be obtained for imaging a moving object.
【図１】この発明の第１の実施の形態の固体撮像装置の
構成を示すブロック図。FIG. 1 is a block diagram showing a configuration of a solid-state imaging device according to a first embodiment of the present invention.
【図２】この発明の実施の形態におけるアナログ−デジ
タル変換手段の出力波形を示す図。FIG. 2 is a diagram showing an output waveform of the analog-digital conversion means in the embodiment of the present invention.
【図３】この発明の実施の形態における固体撮像素子の
概略構成図。FIG. 3 is a schematic configuration diagram of a solid-state image sensor according to the embodiment of the present invention.
【図４】この発明の第２の実施の形態の固体撮像装置の
構成を示すブロック図。FIG. 4 is a block diagram showing a configuration of a solid-state imaging device according to a second embodiment of the present invention.
【図５】第１の従来例の固体撮像装置の構成を示すブロ
ック図。FIG. 5 is a block diagram showing a configuration of a first conventional solid-state imaging device.
【図６】第１の従来例の固体撮像装置のＣＣＤの一撮像
期間内に蓄積される電荷量と電荷蓄積時間の関係を示す
特性図。FIG. 6 is a characteristic diagram showing the relationship between the amount of charge accumulated in one image pickup period of the CCD of the first conventional solid-state image pickup device and the charge accumulation time.
【図７】第１の従来例の固体撮像装置のＣＣＤの一撮像
期間内に蓄積される電荷量と入射した光量の関係を示す
図。FIG. 7 is a diagram showing the relationship between the amount of charge accumulated in one image pickup period of the CCD of the first conventional solid-state image pickup device and the amount of incident light.
【図８】第２の従来例の固体撮像装置の構成を示すブロ
ック図。FIG. 8 is a block diagram showing a configuration of a second conventional solid-state imaging device.
【図９】第２の従来例の固体撮像装置のＣＣＤの一撮像
期間内に蓄積される電荷量と電荷蓄積時間の関係を示す
特性図。FIG. 9 is a characteristic diagram showing the relationship between the amount of charge accumulated in one image pickup period of a CCD of a second conventional solid-state image pickup device and the charge accumulation time.
【図１０】第２の従来例の固体撮像装置のＣＣＤの一撮
像期間内に蓄積される電荷量と入射した光量の関係を示
す図。FIG. 10 is a diagram showing the relationship between the amount of charge accumulated in one CCD image pickup period and the amount of incident light in the solid-state image pickup device of the second conventional example.
１ 固体撮像素子 ２ 信号処理手段 ３ アナログ−デジタル変換手段 ４ 撮像素子制御手段 ５ 蓄積電荷切替手段 ６ ノイズ除去手段 ７ 比較手段 ８ 記憶手段 ９ 温度センサ １０ 記憶手段（データ補正量設定手段） １１ 減算手段（暗電流計測手段） １２ 加算手段（基準レベル設定手段） １３ 遅延手段（暗電流計測手段） DESCRIPTION OF SYMBOLS 1 solid-state image sensor 2 signal processing means 3 analog-digital conversion means 4 image sensor control means 5 accumulated charge switching means 6 noise removal means 7 comparison means 8 storage means 9 temperature sensor 10 storage means (data correction amount setting means) 11 subtraction means (Dark current measuring means) 12 Adding means (reference level setting means) 13 Delaying means (dark current measuring means)
Claims (3)
タを保持する記憶手段と、 前記固体撮像素子の暗電流を計測する暗電流計測手段
と、 前記暗電流の値に対応する前記記憶手段のデータの補正
量を出力するデータ補正量設定手段と、 前記最大蓄積可能電荷量に対応するデータを前記データ
の補正量を用いて補正し基準レベルとして出力する基準
レベル設定手段と、 前記固体撮像素子の出力信号レベルが前記基準レベル以
上のときに制御信号を出力する比較手段と、 前記比較手段の前記制御信号に応答して前記基準レベル
に基づいて前記固体撮像素子の出力信号を補正するノイ
ズ除去手段とを備えた固体撮像装置。1. A solid-state image sensor, storage means for holding data corresponding to the maximum storable charge amount of the solid-state image sensor, dark current measuring means for measuring a dark current of the solid-state image sensor, and the dark current. Data correction amount setting means for outputting the correction amount of the data of the storage means corresponding to the value of, and a reference for correcting the data corresponding to the maximum storable charge amount using the correction amount of the data and outputting it as a reference level. Level setting means, comparing means for outputting a control signal when the output signal level of the solid-state imaging device is equal to or higher than the reference level, and the solid-state imaging based on the reference level in response to the control signal of the comparing means. A solid-state imaging device comprising: a noise removing unit that corrects an output signal of an element.
子と、 前記固体撮像素子の蓄積可能電荷量を零より大きな第１
の電荷量と前記第１の電荷量より大きな第２の電荷量と
に切替可能で、一撮像期間内において前記第１の電荷
量，前記第２の電荷量の順に切替えを行う蓄積電荷切替
手段と、 前記固体撮像素子の前記第１の電荷量に対応するデータ
を保持する記憶手段と、 前記固体撮像素子の暗電流を計測する暗電流計測手段
と、 前記暗電流の値に対応する前記記憶手段のデータの補正
量を出力するデータ補正量設定手段と、 前記第１の電荷量に対応するデータを前記データの補正
量を用いて補正し基準レベルとして出力する基準レベル
設定手段と、 前記固体撮像素子の出力信号レベルが前記基準レベル以
上のときに制御信号を出力する比較手段と、 前記比較手段の前記制御信号に応答して前記基準レベル
に基づいて前記固体撮像素子の出力信号を補正するノイ
ズ除去手段とを備えた固体撮像装置。2. A solid-state image sensor capable of controlling a storable charge amount, and a first solid-state image sensor having a storable charge amount larger than zero.
Stored charge switching means for switching between the first charge amount and the second charge amount in one imaging period, and can switch between the second charge amount and the second charge amount larger than the first charge amount. A storage unit for holding data corresponding to the first charge amount of the solid-state image sensor, a dark current measuring unit for measuring a dark current of the solid-state image sensor, and a memory corresponding to the value of the dark current. Data correction amount setting means for outputting the correction amount of the data of the means, reference level setting means for correcting the data corresponding to the first charge amount using the correction amount of the data, and outputting it as a reference level; Comparing means for outputting a control signal when the output signal level of the image sensor is equal to or higher than the reference level, and correcting the output signal of the solid-state image sensor based on the reference level in response to the control signal of the comparing means. The solid-state imaging device that includes a noise removing unit.
電荷量と第２の電荷量とに切替可能である蓄積電荷切替
手段に代えて、固体撮像素子の蓄積可能電荷量を零と前
記第１の電荷量と前記第２の電荷量とに切替可能で、一
撮像期間内において零，前記第１の電荷量，前記第２の
電荷量の順に切替えを行う蓄積電荷切替手段を設けたこ
とを特徴とする請求項２記載の固体撮像装置。3. The storable charge amount of the solid-state imaging device is set to zero in place of the stored-charge switching means capable of switching the storable charge amount of the solid-state imaging device between a first charge amount and a second charge amount. An accumulated charge switching unit is provided which is switchable between the first charge amount and the second charge amount and switches in the order of zero, the first charge amount, and the second charge amount in one imaging period. The solid-state imaging device according to claim 2, wherein
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33473495A JP3212858B2 (en) | 1995-12-22 | 1995-12-22 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33473495A JP3212858B2 (en) | 1995-12-22 | 1995-12-22 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09181977A true JPH09181977A (en) | 1997-07-11 |
| JP3212858B2 JP3212858B2 (en) | 2001-09-25 |
Family
ID=18280625
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33473495A Expired - Fee Related JP3212858B2 (en) | 1995-12-22 | 1995-12-22 | Solid-state imaging device |
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| Country | Link |
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| JP (1) | JP3212858B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6747696B1 (en) | 1999-03-26 | 2004-06-08 | Casio Computer Co., Ltd. | Camera capable of canceling noise in image data and signal processing method thereof |
| WO2005073682A1 (en) * | 2004-01-30 | 2005-08-11 | Lastek Laboratories Pty Ltd | A method for producing high signal to noise spectral measurements in optical detector arrays |
| US7136100B1 (en) | 1999-09-08 | 2006-11-14 | Casio Computer Co., Ltd. | Electronic still camera capable of removing noise component in image data and signal processing method thereof |
| WO2007091369A1 (en) * | 2006-02-10 | 2007-08-16 | Sharp Kabushiki Kaisha | Fixed-pattern noise eliminating device, solid-state image pickup device, electronic apparatus, and fixed-pattern noise eliminating program |
| US7283163B1 (en) | 1998-09-24 | 2007-10-16 | Canon Kabushiki Kaisha | Image processing apparatus providing noise correction |
-
1995
- 1995-12-22 JP JP33473495A patent/JP3212858B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7283163B1 (en) | 1998-09-24 | 2007-10-16 | Canon Kabushiki Kaisha | Image processing apparatus providing noise correction |
| US6747696B1 (en) | 1999-03-26 | 2004-06-08 | Casio Computer Co., Ltd. | Camera capable of canceling noise in image data and signal processing method thereof |
| US7589769B2 (en) | 1999-03-26 | 2009-09-15 | Casio Computer Co., Ltd. | Camera capable of canceling noise in image data and signal processing method thereof |
| US7136100B1 (en) | 1999-09-08 | 2006-11-14 | Casio Computer Co., Ltd. | Electronic still camera capable of removing noise component in image data and signal processing method thereof |
| WO2005073682A1 (en) * | 2004-01-30 | 2005-08-11 | Lastek Laboratories Pty Ltd | A method for producing high signal to noise spectral measurements in optical detector arrays |
| WO2007091369A1 (en) * | 2006-02-10 | 2007-08-16 | Sharp Kabushiki Kaisha | Fixed-pattern noise eliminating device, solid-state image pickup device, electronic apparatus, and fixed-pattern noise eliminating program |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3212858B2 (en) | 2001-09-25 |
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