JPH09185080A - Liquid crystal electro-optical device - Google Patents
Liquid crystal electro-optical deviceInfo
- Publication number
- JPH09185080A JPH09185080A JP35333095A JP35333095A JPH09185080A JP H09185080 A JPH09185080 A JP H09185080A JP 35333095 A JP35333095 A JP 35333095A JP 35333095 A JP35333095 A JP 35333095A JP H09185080 A JPH09185080 A JP H09185080A
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- liquid crystal
- electrodes
- electric field
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Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【0001】[0001]
【発明の利用分野】本発明は、良好な電気特性と視野角
特性を持ち、画面全体に均一な表示が得られる液晶電気
光学装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal electro-optical device having good electric characteristics and viewing angle characteristics and capable of obtaining a uniform display on the entire screen.
【0002】[0002]
【従来の技術】液晶電気光学装置の視野角を広くする方
法として、液晶に印加する電界の方向を、基板面にほぼ
平行にする方式(以下、スーパーTFT方式と呼ぶ)
が、例えば特開平6−160878により開示されてい
る。この場合、1枚の基板上に形成されたソース電極、
コモン電極間に電界を誘起させ、その電界方向に液晶分
子を配向させている。また、特開平6−214244で
は、電極をセル厚の高さとすることで、液晶に印加する
電界を均一にしている。2. Description of the Related Art As a method for widening the viewing angle of a liquid crystal electro-optical device, a method in which the direction of an electric field applied to liquid crystal is made substantially parallel to a substrate surface (hereinafter referred to as a super TFT method)
Is disclosed, for example, in Japanese Patent Laid-Open No. 6-160878. In this case, the source electrode formed on one substrate,
An electric field is induced between the common electrodes, and liquid crystal molecules are aligned in the direction of the electric field. Further, in Japanese Patent Laid-Open No. 6-214244, the electric field applied to the liquid crystal is made uniform by making the electrodes have a high cell thickness.
【0003】このような電気光学装置では、液晶分子長
軸を基板に平行な状態を維持したままスイッチングする
ため、視野角による液晶の光学特性の変化が少ない。こ
のため、視野角による光漏れ、コントラストの低下等
が、従来のTN、STN方式に比べ小さい。In such an electro-optical device, since switching is performed while maintaining the long axis of the liquid crystal molecule parallel to the substrate, there is little change in the optical characteristics of the liquid crystal depending on the viewing angle. For this reason, light leakage due to a viewing angle, reduction in contrast, and the like are smaller than those in the conventional TN and STN systems.
【0004】[0004]
【従来技術の問題点】しかしながら、従来用いられてい
るスーパーTFT方式の電極配置は、一対の基板のいず
れか一方の基板にのみ形成されており、電極に近い領域
には電界が印加されやすいが、電極直上の領域には電界
強度が低下し、このため液晶材料のスイッチングがセル
内でばらつくという問題があった。However, the conventional super TFT type electrode arrangement is formed only on one of the pair of substrates, and an electric field is easily applied to the region close to the electrodes. However, there is a problem in that the electric field strength decreases in the region directly above the electrodes, and therefore the switching of the liquid crystal material varies within the cell.
【0005】これは、横方向電界を利用して液晶駆動を
行う、スーパーTFT方式において、特に顕著に現れる
欠点である。This is a drawback which is particularly noticeable in the super TFT system in which the liquid crystal is driven by utilizing the lateral electric field.
【0006】上記電界のばらつきを図3もって説明す
る。ここでは簡単のため、絶縁性を示す一対の基板(3
01)及び(303)が一定の間隔をもって重ね合わせ
られるように配置され、一方の基板(301)上に形成
された、台形断面かつ電極間隔がそれぞれ一定な複数の
平行電極(302)、(305)間に、正、負、正、
負、・・・と交互に極性の異なる電圧を印加した場合
の、電極周囲の電気力線(304)の態様について述べ
る。(電荷の形成する電気力線については、電磁気学の
著書、例えば永田一清著『電磁気学』、朝倉書店、及び
後藤・山崎共編『詳解電磁気学演習』、共立出版などを
参照。)The variation of the electric field will be described with reference to FIG. Here, for simplicity, a pair of substrates (3
01) and (303) are arranged so as to be superposed at a constant interval, and a plurality of parallel electrodes (302), (305) formed on one substrate (301) and having a trapezoidal cross section and a constant electrode interval. ) Between positive, negative, positive,
A mode of the lines of electric force (304) around the electrodes when voltages having different polarities such as negative and ... Are applied alternately will be described. (For the electric lines of force formed by electric charges, refer to books on electromagnetics, such as "Electromagnetics" by Kazuyoshi Nagata, Asakura Shoten, and "Goto-Yamazaki Co-ed." Detailed Electromagnetics Exercises ", Kyoritsu Publishing.)
【0007】基板(301)上の一方の電極(302)
から発せられた電気力線(304)は、基板(303)
に近づいたところで向きを変え、他方の電極(305)
へと向かうが、図3からも分かるように、電極が形成さ
れている基板表面近傍と、他方の基板表面近傍とで電束
密度(電気力線の単位面積当たりの本数に比例)が異な
る。One electrode (302) on the substrate (301)
Electric lines of force (304) emitted from the substrate (303)
The other electrode (305)
However, as can be seen from FIG. 3, the electric flux density (proportional to the number of lines of electric force per unit area) differs in the vicinity of the substrate surface where the electrodes are formed and in the vicinity of the other substrate surface.
【0008】ここでは、一例として断面が台形の電極間
の電界を示したが、断面が矩形等他の形状の電極間でも
同様である。なぜならば、電界は電極面に垂直に形成さ
れるものであり、電極近傍とそれ以外の部分とで電気力
線の分布が不均一になる。Although an electric field between electrodes having a trapezoidal cross section is shown here as an example, the same applies to electrodes having other shapes such as a rectangular cross section. This is because the electric field is formed perpendicularly to the electrode surface, and the distribution of the lines of electric force becomes non-uniform in the vicinity of the electrode and in other portions.
【0009】電気力線は各場所での電場の方向を表した
ものである。液晶材料は電場との相互作用で配向状態を
変え、液晶材料の誘電異方性が正のときは、液晶分子長
軸が電場に対して平行に、また負の場合には電場に対し
て垂直に配向するようになる。The lines of electric force represent the direction of the electric field at each place. The liquid crystal material changes its orientation state by the interaction with the electric field. When the dielectric anisotropy of the liquid crystal material is positive, the long axis of the liquid crystal molecule is parallel to the electric field, and when it is negative, it is perpendicular to the electric field. To be oriented.
【0010】図3の場合を例に取ると、一対の基板間で
電気力線が上に凸になるように湾曲している領域が存在
しており、このことは電場が基板に対して平行な成分以
外も有していることを示すものである。従って、上記の
ような電極配置で電界印加時には、前記事項によれば基
板内で液晶分子が基板に平行以外の方向にも配向し得る
ことになる。このような場合、液晶材料の配向不良が発
生する。Taking the case of FIG. 3 as an example, there is a region between the pair of substrates that is curved so that the lines of electric force are convex upward, which means that the electric field is parallel to the substrates. It shows that it also has other components. Therefore, when an electric field is applied with the above electrode arrangement, the liquid crystal molecules can be aligned in directions other than parallel to the substrate in the substrate according to the above matter. In such a case, alignment failure of the liquid crystal material occurs.
【0011】このような電気力線のばらつきは、画素微
細化の際に無視できない欠点となる。これは微細化によ
り電極数が増加し、電極間距離が小さくなると非連続的
な電界が高密度に分布してしまうからである。Such a variation in the lines of electric force is a drawback that cannot be ignored when pixels are miniaturized. This is because as the number of electrodes increases due to miniaturization and the distance between the electrodes decreases, a discontinuous electric field is distributed at high density.
【0012】上記問題の別の解決法としては、液晶にセ
ル厚方向に一様に電界を印加するために電極をセル厚の
高さにする発明が、特開平6−214244で提案され
ている。しかし極端に高さの高い電極を作製するには、
以下の技術的困難が生じる。As another solution to the above problem, Japanese Patent Laid-Open No. 6-214244 proposes an invention in which the electrodes have a high cell thickness in order to uniformly apply an electric field to the liquid crystal in the cell thickness direction. . However, to make extremely tall electrodes,
The following technical difficulties arise.
【0013】第一に、電極の高さをセル厚程度とする
と、電極の頂点と底部で、横方向の電極厚の差が大きく
なりやすい。横方向電界で液晶を駆動するスーパーTF
T方式では電極厚の差は、即ち電極間距離の差となる。
従って、セル厚方向の電界強度が同一画素内で異なるた
め液晶駆動が難しくなる。First, if the height of the electrode is about the cell thickness, the difference in the electrode thickness in the lateral direction between the apex and the bottom of the electrode tends to become large. Super TF that drives liquid crystal by lateral electric field
In the T method, the difference in electrode thickness, that is, the difference in the distance between the electrodes.
Therefore, since the electric field strengths in the cell thickness direction are different in the same pixel, it becomes difficult to drive the liquid crystal.
【0014】第二に、電極高さが極端に高いと、その上
に形成される層のカバレッジが悪く、上に形成される層
が電極である場合、断線を起こしやすい。Second, if the electrode height is extremely high, the coverage of the layer formed thereon is poor, and if the layer formed above is an electrode, disconnection is likely to occur.
【0015】第三に、画素の微細化にあたっても、極端
に高さの高い電極で、横方向の膜厚を薄くし大きなテー
パー角を得るのは、技術的に困難である。Thirdly, it is technically difficult to reduce the film thickness in the lateral direction and obtain a large taper angle with an extremely high electrode even in the miniaturization of pixels.
【0016】画素の微細化にあたり、上述の問題を解決
するため、簡便な方法で作成でき、なおかつ非連続的な
電界を発生しない電極構造が求められている。In order to solve the above problems in the miniaturization of pixels, there is a demand for an electrode structure which can be formed by a simple method and which does not generate a discontinuous electric field.
【0017】さらに別の問題として、液晶駆動用電極及
び、共通電極をAl等からなる金属電極を使用していた
ため、開口率が低下する問題があった。Still another problem is that since the liquid crystal driving electrode and the common electrode are metal electrodes made of Al or the like, the aperture ratio is lowered.
【0018】従来の液晶電気光学装置は、共通電極を対
向基板に形成しており、しかも前記共通電極は透光性を
有する材料、例えばITO等を使用するのが一般的であ
った。しかし、横方向電界駆動方式の液晶電気光学装置
はいずれか一方の基板に液晶駆動用電極及び共通電極を
形成し、しかもいずれの電極もAl等からなる遮光性の
電極を使用しており、有効表示領域が従来の液晶電気光
学装置に比べ減少してしまう欠点、即ち開口率の低下が
あった。In the conventional liquid crystal electro-optical device, a common electrode is formed on a counter substrate, and the common electrode is generally made of a material having a light transmitting property, such as ITO. However, the liquid crystal electro-optical device of the lateral electric field drive system has a liquid crystal drive electrode and a common electrode formed on one of the substrates, and both electrodes use a light-shielding electrode made of Al or the like, which is effective. There is a drawback that the display area is reduced as compared with the conventional liquid crystal electro-optical device, that is, the aperture ratio is reduced.
【0019】[0019]
【発明が解決しようとする課題】本発明の液晶電気光学
装置は、一対の基板上に形成された複数の電極により、
基板に平行な方向の電界(横方向電界)強度を制御し、
液晶材料を動作させる方式のものである。但し、従来の
横方向電界駆動方式にあるような、いずれか一方の基板
にのみ液晶駆動用及び共通電極を形成するものではな
く、他方の基板にも電極を形成し、液晶駆動時にこの電
極からも電界を印加し、これまで問題となっていた、電
界強度の不均一性等の問題を解決するものである。The liquid crystal electro-optical device of the present invention comprises a plurality of electrodes formed on a pair of substrates.
Controls the electric field (transverse electric field) strength in the direction parallel to the substrate,
This is a method of operating a liquid crystal material. However, as in the conventional lateral electric field driving method, the liquid crystal driving and common electrodes are not formed only on one of the substrates as in the conventional lateral electric field driving method, but an electrode is also formed on the other substrate, and when driving the liquid crystal, this electrode is used. Also applies an electric field to solve problems such as nonuniformity of electric field strength, which have been a problem until now.
【0020】さらに、遮光性電極を利用していたことに
よる、開口率の低下を改善を行い、視覚特性の良好な液
晶電気光学装置を提供するものである。Furthermore, it is intended to provide a liquid crystal electro-optical device having improved visual characteristics by improving the reduction in aperture ratio due to the use of the light-shielding electrode.
【0021】[0021]
【課題を解決するための手段】上記課題を解決するため
に、本発明は、少なくとも一方が透明な一対の基板と、
該基板の両方に形成された電極と、前記基板間に狭持さ
れた液晶層とを有し、前記電極は、基板面に平行な方向
を含む電界を形成しうる液晶駆動用の一対の電極を含
み、前記一対の電極は互いに略平行に配置された部分を
有し、前記電極を介して液晶層に電界を印加する電界印
加手段を備えた液晶電気光学装置であって、前記いずれ
か一方の基板上の一対の電極間に形成される電界は、他
方の基板上の一対の電極間に形成された電界強度により
電界分布が制御されることを特徴とする液晶電気光学装
置である。In order to solve the above problems, the present invention provides a pair of substrates at least one of which is transparent,
A pair of electrodes for driving a liquid crystal having electrodes formed on both of the substrates and a liquid crystal layer sandwiched between the substrates, the electrodes being capable of forming an electric field including a direction parallel to the substrate surface. Wherein the pair of electrodes have portions arranged substantially parallel to each other, and the liquid crystal electro-optical device is provided with an electric field applying unit that applies an electric field to the liquid crystal layer via the electrodes. In the liquid crystal electro-optical device, the electric field distribution formed between the pair of electrodes on the substrate is controlled by the electric field strength formed between the pair of electrodes on the other substrate.
【0022】本発明の他の構成は、少なくとも一方が透
明な一対の基板と、該基板の両方に形成された電極と、
前記基板間に狭持された液晶層とを有し、前記電極は、
基板面に平行な方向を含む電界を形成しうる液晶駆動用
の一対の電極を含み、前記一対の電極は互いに略平行に
配置された部分を有し、前記電極を介して液晶層に電界
を印加する電界印加手段を備えた液晶電気光学装置であ
って、前記いずれか一方の基板上の一対の電極間に形成
される電界は、他方の基板上の一対の電極間に形成され
た電界との相互作用により、セル厚方向において電界分
布が均一化されていることを特徴とする液晶電気光学装
置である。According to another structure of the present invention, a pair of substrates, at least one of which is transparent, and electrodes formed on both of the substrates,
A liquid crystal layer sandwiched between the substrates, the electrodes,
It includes a pair of electrodes for driving a liquid crystal capable of forming an electric field including a direction parallel to the substrate surface, the pair of electrodes having portions arranged substantially parallel to each other, and applying an electric field to the liquid crystal layer through the electrodes. In a liquid crystal electro-optical device including an electric field applying unit that applies an electric field, an electric field formed between a pair of electrodes on one of the substrates is equal to an electric field formed between a pair of electrodes on the other substrate. The liquid crystal electro-optical device is characterized in that the electric field distribution is made uniform in the cell thickness direction by the interaction of.
【0023】本発明の他の構成は、少なくとも一方が透
明な一対の基板と、該基板の両方に形成された電極と、
前記基板間に狭持された液晶層とを有し、前記電極は、
基板面に平行な方向を含む電界を形成しうる液晶駆動用
の一対の電極を含み、前記一対の電極は互いに略平行に
配置された部分を有し、前記電極を介して液晶層に電界
を印加する電界印加手段を備えた液晶電気光学装置であ
って、前記一対の基板間の電極により、前記液晶層に対
してに同時に同方向の電界を印加することで、一対の基
板間の電界分布を制御することを特徴とする液晶電気光
学装置である。According to another structure of the present invention, a pair of substrates, at least one of which is transparent, and electrodes formed on both of the substrates,
A liquid crystal layer sandwiched between the substrates, the electrodes,
It includes a pair of electrodes for driving a liquid crystal capable of forming an electric field including a direction parallel to the substrate surface, the pair of electrodes having portions arranged substantially parallel to each other, and applying an electric field to the liquid crystal layer through the electrodes. A liquid crystal electro-optical device provided with an electric field applying means for applying an electric field in the same direction to the liquid crystal layer at the same time by an electrode between the pair of substrates, thereby providing an electric field distribution between the pair of substrates. It is a liquid crystal electro-optical device characterized by controlling.
【0024】本発明の他の構成は、少なくとも一方が透
明な一対の基板と、該基板の両方に形成された電極と、
前記基板間に狭持された液晶層とを有し、前記電極は、
基板面に平行な方向を含む電界を形成しうる液晶駆動用
の一対の電極を含み、前記一対の電極は互いに略平行に
配置された部分を有し、前記電極を介して液晶層に電界
を印加する電界印加手段を備え、前記一対の電極は、両
方の基板において互いに対向する位置に配置されている
ことを特徴とする液晶電気光学装置である。According to another structure of the present invention, a pair of substrates, at least one of which is transparent, and electrodes formed on both of the substrates,
A liquid crystal layer sandwiched between the substrates, the electrodes,
It includes a pair of electrodes for driving a liquid crystal capable of forming an electric field including a direction parallel to the substrate surface, the pair of electrodes having portions arranged substantially parallel to each other, and applying an electric field to the liquid crystal layer through the electrodes. A liquid crystal electro-optical device comprising an electric field applying unit for applying the electric field, wherein the pair of electrodes are arranged at positions facing each other on both substrates.
【0025】本明細書に開示する発明を利用した構成の
一例を図1及び図2に示す。図1に示すのは、ネマチッ
ク液晶を用い、横方向電界で前記液晶材料を駆動し、前
記駆動素子としてpoly−SiTFTを用いたアクテ
ィブマトリクス型の液晶電気光学装置の画素部の概略で
あり、前記装置を上から(基板面に対して垂直な方向か
ら)見た場合であり一部の配線は重なりあって配設され
ているため、上基板の配線しか見えない。また、図2は
図1においてA−A′方向の断面を示したものである。An example of a configuration utilizing the invention disclosed in this specification is shown in FIGS. 1 and 2. FIG. 1 is a schematic diagram of a pixel portion of an active matrix liquid crystal electro-optical device that uses a nematic liquid crystal, drives the liquid crystal material in a lateral electric field, and uses a poly-Si TFT as the driving element. This is the case when the device is viewed from above (from the direction perpendicular to the substrate surface), and since some wirings are arranged so as to overlap, only the wirings on the upper substrate can be seen. Further, FIG. 2 shows a cross section in the AA 'direction in FIG.
【0026】図1及び図2に示す構成において、第一の
基板(101)上には、下地SiO2 膜(103)、ゲ
ート電極(105)、コモン電極(107)、ゲート絶
縁膜より延長される層(109)、スイッチング素子
(111)、ソース電極(113)、液晶駆動用電極
(115)、保護膜(117)、配向膜(119)が形
成されている。In the structure shown in FIGS. 1 and 2, on the first substrate (101), a base SiO 2 film (103), a gate electrode (105), a common electrode (107) and a gate insulating film are extended. A layer (109), a switching element (111), a source electrode (113), a liquid crystal driving electrode (115), a protective film (117), and an alignment film (119).
【0027】一方、第二の基板(102)には下地Si
O2 膜(104)、ゲート電極(106)、コモン電極
(108)、ゲート絶縁膜より延長される層(11
0)、スイッチング素子(112)、ソース電極(11
4)、液晶駆動用電極(116)、保護膜(118)、
配向膜(120)が形成されている。また、(121)
は液晶層である。On the other hand, the second substrate (102) has a base Si layer.
O 2 film (104), gate electrode (106), common electrode (108), layer (11 extending from the gate insulating film
0), switching element (112), source electrode (11
4), a liquid crystal driving electrode (116), a protective film (118),
An alignment film (120) is formed. Also, (121)
Is a liquid crystal layer.
【0028】液晶駆動用電極(115)とコモン電極
(107)、あるいは液晶駆動用電極(116)とコモ
ン電極(108)は 互いに略平行に配置されている。The liquid crystal driving electrode (115) and the common electrode (107), or the liquid crystal driving electrode (116) and the common electrode (108) are arranged substantially parallel to each other.
【0029】ここで、上記ゲート電極(105)、(1
06)はゲート配線(走査線)を、また、ソース電極
(113)、(114)はソース配線(信号線)をそれ
ぞれ兼ねる機能を有する。また、前記コモン電極(10
7)、(108)は上記共通電極に相当する。さらに、
液晶層(121)について、配向状態について述べる場
合には、液晶分子も示す。Here, the gate electrodes (105), (1
06) has a function as a gate wiring (scanning line), and the source electrodes (113) and (114) have a function also as source wiring (signal lines). In addition, the common electrode (10
7) and (108) correspond to the common electrode. further,
When the alignment state of the liquid crystal layer (121) is described, liquid crystal molecules are also shown.
【0030】上記液晶電気光学装置の場合、まず第一の
基板(101)上に形成された液晶材料駆動用の液晶駆
動用電極(115)及びコモン電極(107)間に電界
が印加され、この電界により液晶層(121)中の液晶
分子が基板に対して平行な面内でスイッチングする(配
向状態が変化する)。In the case of the liquid crystal electro-optical device, an electric field is first applied between the liquid crystal driving electrode (115) and the common electrode (107) for driving the liquid crystal material formed on the first substrate (101). The liquid crystal molecules in the liquid crystal layer (121) are switched (alignment state is changed) in a plane parallel to the substrate by the electric field.
【0031】しかし、第一の基板(101)上の電極間
にのみ電界が印加されると、第二の基板(102)に近
いほど電界強度が小さくなるので、液晶材料(121)
の配向方向の制御が不十分となる。However, when an electric field is applied only between the electrodes on the first substrate (101), the electric field strength decreases toward the second substrate (102), so that the liquid crystal material (121).
The control of the orientation direction of is insufficient.
【0032】そこで、第二の基板(102)上にも液晶
駆動用電極(116)及びコモン電極を(107)を設
ける。そのとき、第一の基板と第二の基板とにおいて、
電極が互いに対向する位置に配置する。Therefore, the liquid crystal driving electrode (116) and the common electrode (107) are also provided on the second substrate (102). At that time, in the first substrate and the second substrate,
The electrodes are arranged at positions facing each other.
【0033】すなわち、第一の基板(101)上の液晶
駆動用電極(115)上に第二の基板(102)の液晶
駆動用電極(116)が、また、第一の基板(101)
のコモン電極(107)の上に、第二の基板(102)
のコモン電極(108)がそれぞれ配置されるようにし
て、第二の基板(102)の液晶駆動用電極(116)
−コモン電極間(108)にも電界を印加する。That is, the liquid crystal driving electrode (116) of the second substrate (102) is provided on the liquid crystal driving electrode (115) of the first substrate (101), and the first substrate (101) is also provided.
On the common electrode (107) of the second substrate (102)
Of the second substrate (102) so that the common electrodes (108) of each are arranged respectively.
An electric field is also applied between the common electrodes (108).
【0034】すると、第一の基板(101)上の電極
(115)、(107)間の電界分布は、第二の基板
(102)上の電極(116)、(108)間の電界に
より電気力線が変形され、種々の状態を示すように制御
することができる。特に、第一の基板(101)上の前
記2つの電極(115)、(107)間の電界強度と、
第二の基板(102)上の前記2つの電極(116)、
(108)間の電界強度を同一にすると、上下の基板
(101)、(102)間のどの場所でも電界強度の分
布が一定になる。Then, the electric field distribution between the electrodes (115) and (107) on the first substrate (101) is changed by the electric field between the electrodes (116) and (108) on the second substrate (102). The force lines are deformed and can be controlled to indicate various states. In particular, the electric field strength between the two electrodes (115), (107) on the first substrate (101),
The two electrodes (116) on the second substrate (102),
When the electric field strength between (108) is the same, the electric field strength distribution becomes constant at any place between the upper and lower substrates (101), (102).
【0035】また、上記第一、第二の基板(101)、
(102)には、透光性を有し、かつ外力に対しある程
度の強度を有する材料、例えばガラス、石英などの無機
材料などが用いられる。TFT等を形成する基板(以下
TFT基板とする)には、無アルカリガラスや石英ガラ
スを用いる。また、液晶電気光学装置の軽量化を目的と
する場合、複屈折性の少ないフィルム、例えばPES
(ポリエチレンサルフェート)などを用いることもでき
る。The first and second substrates (101),
For (102), a material having a light-transmitting property and having a certain strength against an external force, for example, an inorganic material such as glass or quartz is used. A non-alkali glass or quartz glass is used for a substrate on which a TFT or the like is formed (hereinafter referred to as a TFT substrate). In addition, for the purpose of reducing the weight of the liquid crystal electro-optical device, a film having a low birefringence, such as PES, is used.
(Polyethylene sulfate) or the like can also be used.
【0036】また、液晶材料(121)の駆動方法とし
てはマルチプレックス方式でもアクティブマトリクス方
式でも良い。Further, the driving method of the liquid crystal material (121) may be a multiplex method or an active matrix method.
【0037】マルチプレックス方式では第一の基板(1
01)上に形成するのは液晶駆動用電極(115)、共
通電極(107)の2種だけでよいが、アクティブマト
リクス方式の場合、このほかにスイッチング素子(11
1)、(112)として非線形素子、例えば薄膜トラン
ジスタ(TFT)やダイオードを各画素毎に形成する。
薄膜トランジスタの場合、ドレイン電極を液晶駆動用電
極(115)、(116)に接続し、共通電極はコモン
電極(107)、(108)として別に設ける。In the multiplex system, the first substrate (1
The liquid crystal driving electrode (115) and the common electrode (107) need only be formed on top of the above (01), but in the case of the active matrix system, the switching element (11) is also added.
As 1) and (112), a non-linear element such as a thin film transistor (TFT) or a diode is formed for each pixel.
In the case of a thin film transistor, the drain electrode is connected to the liquid crystal driving electrodes (115) and (116), and the common electrode is separately provided as the common electrodes (107) and (108).
【0038】TFTとしては活性層にアモルファスシリ
コン又はポリ(多結晶)シリコンを用いたトランジスタ
を用いることが出来る。アクティブマトリクス方式の場
合上記駆動素子の構成は、スタガー型、逆スタガー型と
いった公知の構成を利用することが出来る。また、ポリ
シリコンを用いたトランジスタを用いた場合、液晶材料
を駆動する周辺駆動回路をTFTを作製した基板に形成
することが可能である。周辺駆動回路はTFTを作製す
るのと同じプロセスで作製することが可能となる。この
周辺駆動回路は、n−ch及びp−chトランジスタを
組み合わせた相補型素子から形成される。As the TFT, a transistor using amorphous silicon or poly (polycrystalline) silicon for the active layer can be used. In the case of the active matrix system, the structure of the drive element may be a known structure such as a stagger type or an inverted stagger type. When a transistor including polysilicon is used, a peripheral driver circuit for driving a liquid crystal material can be formed over the substrate over which the TFT is manufactured. The peripheral driver circuit can be manufactured by the same process as that for manufacturing a TFT. This peripheral drive circuit is formed by a complementary element in which n-ch and p-ch transistors are combined.
【0039】なお、スイッチング素子(111)、(1
12))はpoly−Si型TFTを用いることが望ま
しい。特にpoly−SiをTFT活性層に用いた場合
は、a−SiをTFT活性層に用いた場合に比べ活性層
の移動度が大きく、a−Siと同等の特性をより小さい
素子領域で得られるため、各素子の微細化、ひいては高
開口率化が可能となる。また、横方向電界印加にあたっ
ても、キャリヤ移動度の大きいpoly−SiをTFT
活性層に用いた場合の方が、高速応答が実現できる。さ
らに、poly−Siを用いた場合、基板上に液晶材料
を駆動するための周辺駆動回路をも形成することが可能
となり、装置作製プロセスの低減、歩留りの向上、装置
価格の低下に寄与する。The switching elements (111), (1
For 12)), it is desirable to use a poly-Si type TFT. In particular, when poly-Si is used for the TFT active layer, the mobility of the active layer is higher than when a-Si is used for the TFT active layer, and the same characteristics as a-Si can be obtained in a smaller element region. Therefore, it is possible to miniaturize each element, and eventually to increase the aperture ratio. In addition, when a lateral electric field is applied, a poly-Si having a large carrier mobility is used for the TFT.
Higher-speed response can be realized when used for the active layer. Furthermore, when poly-Si is used, it becomes possible to form a peripheral drive circuit for driving the liquid crystal material on the substrate, which contributes to a reduction in device manufacturing process, an improvement in yield, and a decrease in device cost.
【0040】前記素子電極としては、ゲート電極(10
5)、ソース電極(113)はAl、Ti、Ta等から
なる金属、金属を含有する材料、金属酸化物、またはS
i、Siに燐、ホウ素などが含有された材料、カーボ
ン、カーボンを含有する材料等を利用することが出来
る。画素高密度化の際にはゲート、ソース両電極(10
5)、(113)での信号遅延が無視できなくなるの
で、体積抵抗率の低い材料を利用することが望ましい。
また、液晶駆動用電極(115)及びコモン電極(10
7)は前記各種材料の他、ITO等を使用することも出
来る。特にITOのような透光性を有する材料を用いる
と、画素開口率を向上させることができる。As the device electrode, a gate electrode (10
5), the source electrode (113) is made of a metal such as Al, Ti, or Ta, a metal-containing material, a metal oxide, or S.
A material containing phosphorus, boron, etc. in i, Si, carbon, a material containing carbon, etc. can be used. In order to increase the pixel density, both gate and source electrodes (10
Since the signal delays in 5) and (113) cannot be ignored, it is desirable to use a material having a low volume resistivity.
In addition, the liquid crystal driving electrode (115) and the common electrode (10
For 7), ITO or the like can be used in addition to the above various materials. In particular, the use of a light-transmitting material such as ITO can improve the pixel aperture ratio.
【0041】電極断面形状は、矩形、台形、または曲断
面をとるようにする。矩形、台形の断面の時には公知の
パターニング・エッチング法によればよく、また曲断面
形成の方法として、異方性プラズマエッチング、等方性
プラズマエッチング等を組み合わせ、電極断面をなだら
かな断面もしくは曲断面を有するようにしても良い。本
明細書に示す、なだらかな面もしくは曲面を持つ断面を
作製する方法としては、ドライプロセス、ウエットプロ
セスのいずれの方法でも可能である。なお、前記方法
は、なだらかな曲断面を持つ電極の作製方法の一例であ
り、なだらかな曲断面を持つ電極の作製方法は、これら
の方法に限定されるわけではない。The cross section of the electrode has a rectangular shape, a trapezoidal shape, or a curved cross section. In the case of a rectangular or trapezoidal cross section, a well-known patterning / etching method may be used. As a method of forming a curved cross section, anisotropic plasma etching, isotropic plasma etching, etc. are combined to form a smooth or curved electrode cross section. May be included. As a method for forming a cross section having a smooth surface or a curved surface shown in this specification, either a dry process or a wet process can be used. The above method is an example of a method for producing an electrode having a gentle curved section, and the method for producing an electrode having a gentle curved section is not limited to these methods.
【0042】また、各層間絶縁膜(109)、TFT保
護膜(117)としては酸化珪素(SiO2 )または窒
化珪素(SiN)を用いることが可能である。さらにア
クリル系樹脂、またはポリイミド等からなる有機樹脂を
使用することも可能である。Further, it is possible to use silicon oxide (SiO 2 ) or silicon nitride (SiN) as each interlayer insulating film (109) and TFT protective film (117). Furthermore, it is also possible to use an acrylic resin or an organic resin made of polyimide or the like.
【0043】図8には有機樹脂をTFT保護膜として使
用し、その他の構成は上記に示したのと同じである液晶
電気光学装置の断面概略図を示す。特にTFT保護膜と
して有機樹脂を使用すると、基板表面を平滑化する平坦
化膜(801)とすることもできる。本発明の液晶電気
光学装置は液晶材料の複屈折を利用しているため、前記
一対の基板間隔がばらつくと色むらの発生を引き起こ
す。従って前記基板間隔は装置全体にわたって一定であ
ることが重要であり、前記平坦化処理は装置作製の歩留
りを向上させるのに重要なプロセスとなる。FIG. 8 shows a schematic cross-sectional view of a liquid crystal electro-optical device in which an organic resin is used as a TFT protective film and the other structures are the same as those described above. In particular, when an organic resin is used as the TFT protective film, it can be used as a flattening film (801) for smoothing the substrate surface. Since the liquid crystal electro-optical device of the present invention utilizes the birefringence of the liquid crystal material, unevenness in the distance between the pair of substrates causes uneven color. Therefore, it is important that the substrate interval is constant over the entire device, and the planarization process is an important process for improving the yield of device manufacturing.
【0044】次に、第二の基板(102)については第
一の基板(101)と同種の材料を用いることが可能で
ある。また、第二の基板(102)にも液晶材料(12
1)を駆動するための電極を形成する。この時の電極材
料としては第一の基板(101)上の素子(111)、
各電極(105)、(107)、(113)、(11
5)を形成するのに使用した材料を使用することが出来
る。Next, for the second substrate (102), it is possible to use the same material as that for the first substrate (101). The liquid crystal material (12) is also formed on the second substrate (102).
An electrode for driving 1) is formed. As the electrode material at this time, the element (111) on the first substrate (101),
Each electrode (105), (107), (113), (11
The material used to form 5) can be used.
【0045】また、電極の配設パターンは、第一の基板
(101)の駆動用電極(115)、及びコモン電極
(107)が交互に等間隔に配列するようにする。The electrodes are arranged so that the driving electrodes (115) and the common electrodes (107) of the first substrate (101) are alternately arranged at equal intervals.
【0046】また、両方の基板(101)、(102)
に前記素子(111)、(112)及び前記各電極(1
05)、(106)、(107)、(108)、(11
3)、(114)、(115)、(116)を形成する
ため、有効表示領域即ち開口率をできるだけ大きくする
ために、例えば図1のように前記一対の基板(10
1)、(102)上のゲート(105)、(106)及
びソース(113)、(114)及び液晶駆動用電極
(115)、(116)及びコモン電極(107)、
(108)の各配線は重なりあうような位置に成るよう
に配設すればよい。このようにすることで、従来の液晶
電気光学装置のようないずれか一方の基板にゲート、ソ
ース各配線が形成された場合と同様な開口率を得ること
ができる。Also, both substrates (101), (102)
The elements (111), (112) and the electrodes (1)
05), (106), (107), (108), (11
3), (114), (115), and (116), in order to maximize the effective display area, that is, the aperture ratio, for example, as shown in FIG.
1), gates (105), (106) and sources (113), (114) and liquid crystal driving electrodes (115), (116) and a common electrode (107) on (102),
The wirings of (108) may be arranged so as to overlap each other. By doing so, it is possible to obtain the same aperture ratio as in the case where the gate and source wirings are formed on one of the substrates as in the conventional liquid crystal electro-optical device.
【0047】また、第一の基板(101)上もしくは第
二の基板(102)上、あるいは両方の基板上にコント
ラスト向上のため表示に関わらない部分を遮光するた
め、Cr等の金属もしくは黒色の顔料が分散された樹脂
材料などにより、ブラックマトリクスを形成する(図示
せず)。さらに、カラー表示の場合には各画素に対応す
る位置にR(赤)、G(緑)、B(青)もしくはC(シ
アン)、M(マジェンダ)、Y(黄)のカラーフィルタ
ーを形成する。カラーフィルターの各色の配置はストラ
イプ配置又はデルタ配置などが利用できる。Further, on the first substrate (101), the second substrate (102), or both substrates, in order to improve the contrast, a portion not related to the display is shielded from light, so that metal such as Cr or black is used. A black matrix is formed by a resin material in which the pigment is dispersed (not shown). Further, in the case of color display, R (red), G (green), B (blue) or C (cyan), M (magenta), Y (yellow) color filters are formed at positions corresponding to each pixel. . As the arrangement of each color of the color filter, a stripe arrangement or a delta arrangement can be used.
【0048】その後第一の基板(101)上、及び第二
の基板(102)上に、配向処理を施した。前記配向処
理は液晶分子が基板に対して平行かつ一軸に配向するよ
うに行う。前記配向処理としては基板面を直接、もしく
はナイロン、ポリイミド等の有機樹脂よりなる膜(配向
膜)(119)、(120)を塗布後前記樹脂面上を、
一方向に擦るラビング処理が有効である。なお、前述の
有機樹脂によるTFT保護膜(平坦化膜(801))の
表面をそのままラビング処理等の配向処理をすることで
前記の配向膜を形成するプロセスをなくすことも可能で
ある。Then, the first substrate (101) and the second substrate (102) were subjected to orientation treatment. The alignment treatment is performed so that the liquid crystal molecules are aligned parallel to the substrate and uniaxially. As the alignment treatment, the substrate surface is directly applied, or after the films (orientation films) (119) and (120) made of an organic resin such as nylon or polyimide are applied, the resin surface is applied.
A rubbing process of rubbing in one direction is effective. It is also possible to eliminate the process of forming the alignment film by directly subjecting the surface of the TFT protective film (planarization film (801)) made of the organic resin to the alignment treatment such as rubbing.
【0049】図5及び図6にはラビング方向(50
2)、(503)を示した。ラビング方向については使
用する液晶材料(121)により異なり、第一の基板
(101)側は、誘電率異方性が正の材料の場合、電界
に非平行、望ましくは電界と45゜をなす方向とする。
さらにまた、誘電率異方性が負の材料の場合、電界に垂
直でない方向、望ましくは電界と45゜をなす方向とす
る。また第二の基板(102)側のラビング処理は、第
一の基板(101)のラビング方向に平行、もしくは反
平行をなすようになされる。5 and 6, the rubbing direction (50
2) and (503) are shown. The rubbing direction depends on the liquid crystal material (121) used, and the first substrate (101) side is not parallel to the electric field when the material has positive dielectric anisotropy, and preferably has a direction of 45 ° with the electric field. And
Furthermore, in the case of a material having a negative dielectric anisotropy, the direction is not perpendicular to the electric field, preferably 45 ° with the electric field. The rubbing process on the second substrate (102) side is performed in parallel or anti-parallel to the rubbing direction of the first substrate (101).
【0050】このようにして作製された前記一対の基板
(101)、(102)は、一定の間隔をもって重ね合
わせ、これを液晶セルとする。前記一対の基板(10
1)、(102)のいずれか一方に、接着剤としてシー
ル剤(図示せず)を所望のパターンに形成する。シール
剤としては熱硬化型、紫外線硬化型等の樹脂材料を使用
する。前記樹脂材料としてはエポキシ系、ウレタンアク
リレート系などの材料を使用することが可能である。ま
た、他方の基板には前記一対の基板の間隔をセル全体に
一定に保持するためスペーサー(図示せず)を散布す
る。The pair of substrates (101) and (102) produced in this manner are stacked at a constant interval to form a liquid crystal cell. The pair of substrates (10
A sealant (not shown) as an adhesive is formed in a desired pattern on either one of 1) and (102). As the sealant, a thermosetting type resin material, an ultraviolet ray curing type resin material or the like is used. As the resin material, an epoxy-based material, a urethane acrylate-based material, or the like can be used. Further, spacers (not shown) are sprayed on the other substrate to keep the distance between the pair of substrates constant throughout the cell.
【0051】シール剤硬化後、液晶材料(121)を液
晶セルに真空注入法等により注入する。なお、シール剤
を形成する前に予め一方の基板に液晶層(121)を形
成し、その後シール剤を形成して他方の基板を重ね合わ
せてもよい。After the sealing agent is cured, the liquid crystal material (121) is injected into the liquid crystal cell by a vacuum injection method or the like. The liquid crystal layer (121) may be formed in advance on one of the substrates before forming the sealant, and then the sealant may be formed and the other substrate may be superposed.
【0052】本発明で利用できる液晶材料としては、ネ
マチック、コレステリック、スメクチック性を示す材料
が挙げられるが、特にネマチック材料を用いることが望
ましい。さらに、ネマチック液晶の中でも、駆動方法に
よって誘電異方性が正もしくは負を示すものを適宜選択
して使用する。さらに、屈折率異方性が小さいものを用
いると、より広い視野角が得られる。Examples of the liquid crystal material that can be used in the present invention include materials exhibiting nematic, cholesteric, and smectic properties, and nematic materials are particularly preferably used. Further, among the nematic liquid crystals, those having a positive or negative dielectric anisotropy depending on the driving method are appropriately selected and used. Furthermore, a wider viewing angle can be obtained by using one having a small refractive index anisotropy.
【0053】また、本発明の液晶電気光学装置の液晶材
料の配向状態について、図5及び図6に概略を示す。こ
こでは一例として、誘電異方性が負の材料を使用した場
合を示した。図5は無電界時、図6は電界印加時の配向
状態である。なお、この図では概略図として前記一対の
基板上の構成物として電極(107)、(115)、
(108)、(116)、及び配向膜(119)、(1
20)のみを示し、その他の素子、配線等は省略した。Further, the alignment state of the liquid crystal material of the liquid crystal electro-optical device of the present invention is schematically shown in FIGS. Here, as an example, the case where a material having a negative dielectric anisotropy is used is shown. FIG. 5 shows an alignment state when no electric field is applied, and FIG. 6 shows an alignment state when an electric field is applied. In this figure, as a schematic diagram, the electrodes (107), (115), as constituents on the pair of substrates,
(108), (116), and alignment films (119), (1
20) is shown, and other elements, wirings, etc. are omitted.
【0054】前記液晶電気光学装置は、液晶材料の複屈
折性を利用して表示を行うため、一対の偏光板(50
1)、(502)をその光軸(505)、(506)が
直交するように配置し、前記一対の偏光板の間に液晶セ
ルを挟む。この時液晶材料(121)の配向方向は、検
光子即ち光源に近い方の偏光板の光軸に平行である。Since the liquid crystal electro-optical device uses the birefringence of the liquid crystal material for display, a pair of polarizing plates (50
1) and (502) are arranged so that their optical axes (505) and (506) are orthogonal to each other, and a liquid crystal cell is sandwiched between the pair of polarizing plates. At this time, the alignment direction of the liquid crystal material (121) is parallel to the optical axis of the analyzer, that is, the polarizing plate closer to the light source.
【0055】このようにして作製された液晶電気光学装
置について、液晶材料(121)の配向は、無電界時に
は図5に示すように、液晶分子(121)は長軸を基板
に平行かつラビング方向(503)、(504)に平行
に一軸配向している。In the liquid crystal electro-optical device manufactured in this manner, the liquid crystal material (121) is aligned in the rubbing direction with the long axis parallel to the substrate as shown in FIG. 5 when no electric field is applied. It is uniaxially oriented parallel to (503) and (504).
【0056】次に、電極(107)、(115)、(1
08)、(116)に電界印加時は、図6に示すよう
に、配向規制力が強い配向膜界面近傍の液晶分子(12
2)は、ラビング方向(503)、(504)に平行な
向きを維持し、配向規制力が弱い液晶層中央近傍の液晶
分子(123)は電界により光軸が変化する。誘電異方
性が正の液晶材料を用いた場合には液晶分子(123)
の長軸が電界方向に対して平行になるような向きとな
り、誘電異方性が負の場合には図6のように、液晶分子
の長軸(123)が電界方向に対して垂直になるような
向きとなる。Next, the electrodes (107), (115), (1
When an electric field is applied to (08) and (116), as shown in FIG. 6, liquid crystal molecules (12
In 2), the direction parallel to the rubbing directions (503) and (504) is maintained, and the optical axis of the liquid crystal molecule (123) near the center of the liquid crystal layer where the alignment control force is weak is changed by the electric field. When a liquid crystal material having a positive dielectric anisotropy is used, liquid crystal molecules (123)
The major axis of the liquid crystal molecules is oriented parallel to the electric field direction, and when the dielectric anisotropy is negative, the major axis (123) of the liquid crystal molecules is perpendicular to the electric field direction as shown in FIG. It will be like this.
【0057】このため、液晶電気光学装置を透過する光
について、無電界時に液晶材料(121)の配向はセル
内で検光子(501)の光軸(505)に平行となるた
め、入射光は偏光子(502)を透過できず、この時の
透過光量はゼロとなる。一方、電界印加時は液晶材料
(121)の光軸の向きが変化することで入射光は楕円
偏光となり、偏光子(502)を透過する。Therefore, with respect to light transmitted through the liquid crystal electro-optical device, the orientation of the liquid crystal material (121) is parallel to the optical axis (505) of the analyzer (501) in the cell when no electric field is applied, so that the incident light is The polarizer (502) cannot be transmitted, and the amount of transmitted light at this time becomes zero. On the other hand, when an electric field is applied, the direction of the optical axis of the liquid crystal material (121) changes, so that the incident light becomes elliptically polarized light and passes through the polarizer (502).
【0058】表示を行う場合、まず第一の基板のゲート
電極(105)に、任意の期間で選択信号(走査信号)
が印加され、ソース電極(113)に印加された映像デ
ータは選択期間中にスイッチング素子(111)が導通
状態となるため液晶駆動用電極(115)に印加され
る。一方コモン電極(107)は接地しておくか、ある
いは任意の波形を印加しておく。When displaying, a selection signal (scanning signal) is first applied to the gate electrode (105) of the first substrate at an arbitrary period.
Is applied and the video data applied to the source electrode (113) is applied to the liquid crystal driving electrode (115) because the switching element (111) becomes conductive during the selection period. On the other hand, the common electrode (107) is grounded or an arbitrary waveform is applied.
【0059】すると、液晶駆動用電極(115)−コモ
ン電極間(107)に基板に平行かつ液晶駆動用電極
(115)、コモン電極(107)の長手方向に対して
垂直な方向の成分を有する電界が形成され、この電界に
より液晶分子(121)が基板(101)、(102)
に対して平行な面内でスイッチングし(配向状態が変化
し)、画素に映像データが書き込まれた状態となる。Then, there is a component parallel to the substrate between the liquid crystal driving electrode (115) and the common electrode (107) and perpendicular to the longitudinal direction of the liquid crystal driving electrode (115) and the common electrode (107). An electric field is formed, and the liquid crystal molecules (121) are caused by the electric field to form the substrates (101) and (102).
Switching occurs in a plane parallel to (the orientation state changes), and the image data is written in the pixel.
【0060】選択期間終了後、スイッチング素子(11
1)は非導通状態となる。液晶駆動用電極(115)−
コモン電極間(107)には先程印加された電界が保持
され、書き込まれた映像データが保存される。After the end of the selection period, the switching element (11
1) is in a non-conducting state. Liquid crystal driving electrode (115)-
The applied electric field is held between the common electrodes (107), and the written video data is saved.
【0061】以下、第一の基板(101)上のゲート電
極(105)に次々に走査信号を印加させ、基板(10
1)全体に映像データを書き込む。Hereinafter, scanning signals are sequentially applied to the gate electrode (105) on the first substrate (101), and the substrate (10
1) Write video data to the whole.
【0062】しかしながら、第一の基板(101)にの
み電界を印加すると第一の基板(101)の電極近傍は
電界強度が強くなるが、第二の基板(102)に近づく
につれ電界強度が低下してしまう。また、基板に平行以
外の成分の電界も多く存在してしまう。そこで、第二の
基板(102)に設けられた液晶駆動用電極(11
6)、コモン電極(108)に対して、第一の基板(1
01)の液晶駆動用電極(115)−コモン電極(10
7)間に形成された電界の分布状態を制御するため電界
を印加する。However, when an electric field is applied only to the first substrate (101), the electric field strength increases near the electrodes of the first substrate (101), but the electric field strength decreases as it approaches the second substrate (102). Resulting in. In addition, there are many electric fields having components other than parallel to the substrate. Therefore, the liquid crystal drive electrode (11) provided on the second substrate (102).
6), with respect to the common electrode (108), the first substrate (1
01) liquid crystal driving electrode (115) -common electrode (10)
7) An electric field is applied to control the distribution state of the electric field formed between the two.
【0063】また電界の印加方法について、第一の基板
(101)及び第二の基板(102)には同時に電界が
印加する。さらに電界の向きは上下の基板(101)、
(102)で同方向となるようにする。Regarding the method of applying the electric field, the electric field is applied to the first substrate (101) and the second substrate (102) at the same time. Furthermore, the direction of the electric field is the upper and lower substrates (101),
At (102), the directions are the same.
【0064】従って、第二の基板(102)上の電極間
には、第一の基板(101)上の電極間に映像データの
書込みと同じタイミングで同一映像データを書き込む。
このことで、基板に平行な成分を有する電界が一対の基
板(101)、(102)間の各部分で形成され、電気
力線が画素内で平行になる。Therefore, the same video data is written between the electrodes on the second substrate (102) at the same timing as the video data is written between the electrodes on the first substrate (101).
As a result, an electric field having a component parallel to the substrate is formed in each portion between the pair of substrates (101) and (102), and the lines of electric force are parallel within the pixel.
【0065】なお、上記には偏光板(501)を2枚使
用した構成としたが、前記一対の基板(101)、(1
02)のうちいずれか一方に金属等からなる反射板を形
成すれば、偏光板を1枚しか用いずに液晶電気光学装置
を作製することが可能となり、明るいディスプレイを実
現できる。また上記金属性の反射板は画素等の電極を兼
ねることも可能である。Although the two polarizing plates (501) are used in the above, the pair of substrates (101), (1)
If a reflecting plate made of a metal or the like is formed on either one of 02), a liquid crystal electro-optical device can be manufactured using only one polarizing plate, and a bright display can be realized. Further, the metallic reflection plate can also serve as an electrode of a pixel or the like.
【0066】[0066]
【作用】本明細書に示す液晶電気光学装置の構成とする
と、従来の横方向電界駆動方式の液晶電気光学装置に比
べ、セル内のセル厚方向の電束密度は均一になる。これ
により、セル厚方向のほとんどの液晶分子は電界の印加
により同様に配向ベクトルを変化させる。その結果、表
示の立ち上がり、応答特性が向上する。When the liquid crystal electro-optical device according to the present specification is constructed, the electric flux density in the cell in the cell thickness direction becomes uniform as compared with the conventional lateral electric field driving type liquid crystal electro-optical device. As a result, almost all liquid crystal molecules in the cell thickness direction similarly change their orientation vectors when an electric field is applied. As a result, the rising of the display and the response characteristics are improved.
【0067】この電界の連続性は、電極に電圧を印加し
た場合の、電極周囲の電気力線の態様を見れば明らかで
ある。以下、図4をもって電極周囲の電気力線の態様を
説明する。The continuity of this electric field is apparent from the aspect of the lines of electric force around the electrodes when a voltage is applied to the electrodes. Hereinafter, the mode of the lines of electric force around the electrodes will be described with reference to FIG.
【0068】上記の駆動方法によりセル内に電界を印加
した場合、図4に示すように、一方の基板(101)上
の電極(107)、(115)間にのみ電界を印加した
ときに形成された電気力線(306)(図4中の点線で
表した曲線)は、他方の基板上の電極(116)、(1
08)間に形成された電界により図中矢印(307)の
方向に変形され、実効的に図中の実線で表したような電
気力線(306)となる。従って、本発明の液晶電気光
学装置の電気力線の分布は、いずれが一方の基板にのみ
電極を形成する場合より、均一となる。When an electric field is applied to the inside of the cell by the above driving method, as shown in FIG. 4, it is formed when an electric field is applied only between the electrodes (107) and (115) on one substrate (101). The generated electric force lines (306) (curves represented by dotted lines in FIG. 4) are the electrodes (116), (1
08), the electric field is deformed in the direction of the arrow (307) in the figure, and the electric line of force (306) is effectively represented by the solid line in the figure. Therefore, the distribution of the lines of electric force of the liquid crystal electro-optical device of the present invention is more uniform than in the case where the electrodes are formed only on one of the substrates.
【0069】上記では一例として電極断面が台形のもの
について説明したが、これに限定されることはなく、電
極断面が円、楕円の曲率を利用したものでも同様の効果
が得られる。また、断面形状が正半円なだけでなく、円
弧をなすようにしても同様の効果が得られる。さらに電
極のエッジ断面が円弧等の曲面を有するようにしても良
い。もちろん、境界変化の緩やかな多角形形状を有する
断面を持つ電極でも良い。The trapezoidal electrode section has been described above as an example, but the present invention is not limited to this, and the same effect can be obtained even if the electrode section uses a circular or elliptic curvature. Further, the same effect can be obtained not only when the cross-sectional shape is a regular semicircle but also when an arc is formed. Further, the edge cross section of the electrode may have a curved surface such as an arc. Of course, an electrode having a cross section having a polygonal shape with gentle boundary changes may be used.
【0070】さらに、なだらかな曲断面を持つ電極等薄
膜の上に成膜される膜は、薄膜の丸みのため、カバレッ
ジも良好である。そのため、カバレッジの悪さに起因す
る、不純物の混入、断線等を防ぐ効果もある。Furthermore, a film formed on a thin film such as an electrode having a gentle curved cross section has good coverage because of the roundness of the thin film. Therefore, there is also an effect of preventing contamination of impurities, disconnection, and the like due to poor coverage.
【0071】なお、本発明では、液晶材料に横方向電界
を印加する方式の液晶電気光学装置について述べたが、
これに限ることなく、例えば従来のTN方式等の縦電界
を印加する方式の液晶電気光学装置に用いることでも、
セル内の電界の乱れを低減することが出来、また、カバ
レッジの良い電気光学装置を作製することが出来る。以
下に、本発明の実施例を図をもって説明する。In the present invention, the liquid crystal electro-optical device of the type in which the lateral electric field is applied to the liquid crystal material has been described.
Without being limited to this, for example, when used in a liquid crystal electro-optical device of a method of applying a vertical electric field such as a conventional TN method,
Disturbance of the electric field in the cell can be reduced, and an electro-optical device with good coverage can be manufactured. Embodiments of the present invention will be described below with reference to the drawings.
【0072】[0072]
〔実施例1〕本実施例では、周辺駆動回路をも基板上に
形成するモノリシック型アクティブマトリクス回路とし
た。この制作工程について、図7を用いて説明する。図
7は周辺駆動回路付近の概略図であり、左側に駆動回路
のTFTの作製工程を、右側にアクティブマトリクス回
路のTFTの作製工程をそれぞれ示した。なお、この工
程は低温ポリシリコンプロセスのものである。[Embodiment 1] In this embodiment, a monolithic active matrix circuit in which a peripheral drive circuit is also formed on a substrate is used. This production process will be described with reference to FIG. FIG. 7 is a schematic view of the periphery of the peripheral drive circuit. The left side shows the steps of manufacturing the TFT of the drive circuit, and the right side shows the steps of manufacturing TFT of the active matrix circuit. Note that this step is a low temperature polysilicon process.
【0073】まず、第一の絶縁基板(101)としてコ
ーニング#1737の上に、下地酸化膜(103)を形
成した。この酸化珪素膜の形成方法は、酸素雰囲気中で
のスパッタ法やプラズマCVD法を用いればよい。First, a base oxide film (103) was formed on Corning # 1737 as the first insulating substrate (101). As a method of forming this silicon oxide film, a sputtering method in an oxygen atmosphere or a plasma CVD method may be used.
【0074】その後、プラズマCVD法やLPCVD法
によってアモルファスのシリコン膜を300〜1500
Å、好ましくは500〜1000Åに形成した。そし
て、500℃以上、好ましくは、500〜600℃の温
度で熱アニールを行い、シリコン膜を結晶化させた、も
しくは、結晶性を高めた。熱アニールによって結晶化の
のち、光(レーザーなど)アニールをおこなって、さら
に結晶化を高めてもよい。また、熱アニールによる結晶
化の際に特開平6−244103、同6−244104
に記述されているように、ニッケル等のシリコンの結晶
化を促進させる元素(触媒元素)を添加してもよい。After that, an amorphous silicon film of 300 to 1500 is formed by a plasma CVD method or an LPCVD method.
Å, preferably 500 to 1000Å. Then, thermal annealing was performed at a temperature of 500 ° C. or higher, preferably 500 to 600 ° C. to crystallize the silicon film or enhance the crystallinity. After crystallization by thermal annealing, optical (laser etc.) annealing may be performed to further enhance crystallization. In addition, when crystallizing by thermal annealing, Japanese Patent Laid-Open Nos. 6-244103 and 6-244104
As described in (1), an element (catalyst element) that promotes crystallization of silicon such as nickel may be added.
【0075】次にシリコン膜をエッチングして島状に形
成し、駆動回路のTFT の活性層(701)(Pチャ
ネル型TFT用)、(702)(Nチャネル型TFT
用)とマトリクス回路のTFT(画素TFT) の活性層
(703)を形成した。さらに、酸素雰囲気中でのスパ
ッタ法によって厚さ500〜2000Åの酸化珪素のゲ
ート絶縁膜(704)を形成した。ゲート絶縁膜の形成
方法としては、プラズマCVD法を用いてもよい。プラ
ズマCVD法によって酸化珪素膜を形成する場合には、
原料ガスとして、一酸化二窒素(N2 O)もしくは酸素
(O2 )とモノシラン(SiH4 )を用いることが好ま
しかった。Next, the silicon film is etched to form islands, and the active layers (701) (for P-channel TFTs) of the TFTs of the drive circuit, (702) (N-channel TFTs).
Active layer (703) of the TFT (pixel TFT) of the matrix circuit. Further, a gate insulating film (704) of silicon oxide having a thickness of 500 to 2000 Å was formed by a sputtering method in an oxygen atmosphere. A plasma CVD method may be used as a method for forming the gate insulating film. When the silicon oxide film is formed by the plasma CVD method,
It was preferable to use dinitrogen monoxide (N 2 O) or oxygen (O 2 ) and monosilane (SiH 4 ) as the source gas.
【0076】その後、厚さ2000〜6000Åのアル
ミニウムをスパッタ法によって基板全面に形成した。こ
こでアルミニウムはその後の熱プロセスによってヒロッ
クが発生するのを防止するため、シリコンまたはスカン
ジウム、パラジウムなどを含有するものを用いてもよ
い。そして、等方性プラズマエッチングを行いゲート電
極(705)、(706)、(707)と、コモン電極
(708)(共通電極)を形成した(図7(A))。こ
の時、放電ガス電圧を適切に設定し、電極に曲面を持た
せた。その後、イオンドーピング法によって、全ての島
状活性層に、ゲート電極をマスクとして自己整合的に、
フォスフィン(PH3 )をドーピングガスとして、燐が
注入される。ドーズ量は1×1012〜5×1013原子/
cm2 する。 この結果、弱いN型領域(709)、
(710)、(711) が形成された。(図7(B
))After that, aluminum having a thickness of 2000 to 6000Å was formed on the entire surface of the substrate by the sputtering method. Here, aluminum may contain silicon, scandium, palladium, or the like in order to prevent hillocks from being generated by a subsequent thermal process. Then, isotropic plasma etching was performed to form gate electrodes (705), (706), (707) and a common electrode (708) (common electrode) (FIG. 7A). At this time, the discharge gas voltage was appropriately set, and the electrodes had curved surfaces. After that, by an ion doping method, all the island-shaped active layers are self-aligned using the gate electrode as a mask,
Phosphorus is injected using phosphine (PH 3 ) as a doping gas. The dose amount is 1 × 10 12 to 5 × 10 13 atoms /
cm 2 As a result, a weak N-type region (709),
(710) and (711) were formed. (Fig. 7 (B
))
【0077】次にPチャネル型の活性層を覆うフォトレ
ジストのマスク(712)及び画素TFTの活性層(7
13)のうち、ゲート電極に平行にゲート電極(70
8)の端から3μm離れた部分まで覆うフォトレジスト
のマスク(713) が形成される。そして、再びイオン
ドーピング法によってフォスフィンをドーピングガスと
して燐を注入する。ドーズ量は1×1014〜5×1015
原子/cm2 とする。この結果として、強いN型領域
(ソース、ドレイン)(714)、(715)が形成さ
れる。画素TFT上のフォトレジスト(713)に覆わ
れていた領域(716)は、今回のドーピングでは燐が
注入されないので、弱いN型のままとなる。(図7(C
))Next, a photoresist mask (712) covering the P-channel active layer and the active layer (7) of the pixel TFT.
13), the gate electrode (70
A photoresist mask (713) is formed so as to cover a portion 3 μm away from the end of 8). Then, phosphorus is injected again using phosphine as a doping gas by the ion doping method. Dose amount is 1 × 10 14 to 5 × 10 15
Atom / cm2. As a result, strong N-type regions (source and drain) (714) and (715) are formed. The region (716) covered with the photoresist (713) on the pixel TFT remains weak N-type because phosphorus is not implanted in this doping. (Fig. 7 (C
))
【0078】次に、Nチャネル型TFTの活性層(70
2)、(703)をフォトレジストのマスク(717)
で覆い、ジボラン(B2 H6 )をドーピングガスとし
て、イオンドーピング法により、島状領域(701)に
硼素が注入される。ドーズ量は5×1014〜8×1015
原子/cm2 とする。このドーピングでは、硼素のドー
ズ量が図7(C)における燐のドーズ量が上回るため、
先に形成されていた弱いN型領域(708)は強いP型
領域(718)に反転する。以上のドーピングにより、
強いN型領域(ソース/ドレイン)(714)、(71
5)、強いP型領域(ソース/ドレイン)(718)、
弱いN型領域(低濃度不純物領域)(716)が形成さ
れる。(図7(D))Next, the active layer of the N-channel TFT (70
2) and (703) are photoresist masks (717)
Then, boron is implanted into the island region (701) by an ion doping method using diborane (B 2 H 6 ) as a doping gas. The dose amount is 5 × 10 14 to 8 × 10 15.
Atom / cm 2 . In this doping, since the dose amount of boron exceeds the dose amount of phosphorus in FIG. 7C,
The previously formed weak N-type region (708) is inverted into a strong P-type region (718). By the above doping,
Strong N-type region (source / drain) (714), (71
5), strong P-type region (source / drain) (718),
A weak N-type region (low concentration impurity region) (716) is formed. (FIG. 7 (D))
【0079】その後、450〜850℃で0. 5〜3時
間の熱アニールを施すことにより、ドーピングによるダ
メージを回復せしめ、ドーピング不純物を活性化、シリ
コンの結晶性を回復させた。その後、全面に層間絶縁物
(719)として、プラズマCVD法によって酸化珪素
膜を厚さ3000〜6000Å形成した。これは、窒化
珪素膜あるいは酸化珪素膜と窒化珪素膜の多層膜であっ
てもよい。そして、層間絶縁膜(719)をウエットエ
ッチング法またはドライエッチング法によって、エッチ
ングして、ソース/ドレインにコンタクトホールを形成
した。After that, thermal annealing was performed at 450 to 850 ° C. for 0.5 to 3 hours to recover the damage caused by the doping, activate the doping impurities, and recover the crystallinity of silicon. After that, a silicon oxide film having a thickness of 3000 to 6000Å was formed on the entire surface as an interlayer insulator (719) by a plasma CVD method. This may be a silicon nitride film or a multilayer film of a silicon oxide film and a silicon nitride film. Then, the interlayer insulating film (719) was etched by wet etching or dry etching to form contact holes in the source / drain.
【0080】そして、スパッタ法によって厚さ2000
〜6000Åのアルミニウム膜、もしくはチタンとアル
ミニウムの多層膜を形成する。これをレジストをマスク
として用い等方性プラズマエッチングした。この時、放
電ガス電圧を適切に設定し、電極に曲面を持たせ、周辺
回路の電極・配線(720)、(721)、(722)
および画素TFTの電極・配線(723)、(724)
を形成した。電極(724)は液晶駆動用電極(11
5)を兼ねるような配線パターンとした。さらに、プラ
ズマCVD法によって、厚さ1000〜3000Åの窒
化珪素膜(725)が層間膜として形成された。(図7
(E))Then, a thickness of 2000 is obtained by the sputtering method.
An aluminum film of 6000 Å or a multilayer film of titanium and aluminum is formed. This was subjected to isotropic plasma etching using the resist as a mask. At this time, the discharge gas voltage is appropriately set, the electrodes have curved surfaces, and electrodes / wirings (720), (721), (722) of the peripheral circuit are provided.
And electrode / wiring of pixel TFT (723), (724)
Was formed. The electrode (724) is a liquid crystal driving electrode (11
The wiring pattern also serves as 5). Further, a silicon nitride film (725) having a thickness of 1000 to 3000 Å was formed as an interlayer film by the plasma CVD method. (FIG. 7
(E))
【0081】また、第二の基板(102)上にも第一の
基板(101)と同様にTFT及び共通電極を形成し
た。第一の基板(101)と第二の基板(102)上の
各素子、配線電極のパターンは図2に示すように、まず
液晶駆動用電極(115)、(116)とコモン電極
(107)、(108)の間隔が一定になるようなパタ
ーンを基本とし、ゲート電極(105)、(106)、
ソース電極(113)、(114)及びTFT(11
1)、(112)については、画素の開口率が最も大き
くなるように適切な位置に配設した。また第一の基板
(101)と第二の基板(102)の配線パターンはち
ょうど左右が反転したような関係となる。Further, a TFT and a common electrode were formed on the second substrate (102) similarly to the first substrate (101). The patterns of the elements and wiring electrodes on the first substrate (101) and the second substrate (102) are, as shown in FIG. 2, liquid crystal driving electrodes (115) and (116) and a common electrode (107). , (108) have a constant interval, and the gate electrodes (105), (106),
Source electrodes (113), (114) and TFT (11
As for 1) and (112), they were arranged at appropriate positions so that the aperture ratio of the pixel was maximized. Further, the wiring patterns of the first substrate (101) and the second substrate (102) have a relationship in which the right and left are just inverted.
【0082】また、第一の基板(101)上もしくは第
二の基板(102)あるいは両方の基板上には、コント
ラスト向上のため表示に関わらない部分を遮光するた
め、Cr等の金属もしくは黒色の顔料が分散された樹脂
材料などにより、ブラックマトリクスを形成した。On the first substrate (101), the second substrate (102), or both substrates, a metal such as Cr or black is used to shield the portion not related to display for improving contrast. A black matrix was formed from a resin material in which the pigment was dispersed.
【0083】その後、第一の基板(101)及び第二の
基板(102)に、ポリイミドよりなる配向膜(11
9)、(120)を形成した。配向膜としてはポリイミ
ドを公知のスピンコート法もしくはDIP法などにより
形成した。次に配向膜表面をラビングした。After that, an alignment film (11) made of polyimide was formed on the first substrate (101) and the second substrate (102).
9) and (120) were formed. As the alignment film, polyimide was formed by a known spin coating method or DIP method. Next, the surface of the alignment film was rubbed.
【0084】ラビング方向(503)、(504)につ
いては使用する液晶材料(121)により異なり、第一
の基板(101)側の方向(503)は、誘電率異方性
が正の材料の場合、電界方向に非平行であって、電界方
向に45゜またはそれより電界方向に近い角度をなす方
向とする。さらにまた、誘電率異方性が負の材料の場
合、電界に非垂直であって、電界に垂直な方向に45°
またはそれより電界に垂直な方向に近い角度をなす方向
とする。また第二の基板(102)側のラビング処理
(504)は、第一の基板(101)のラビング方向に
平行、もしくは反平行をなすようになされる。The rubbing directions (503) and (504) differ depending on the liquid crystal material (121) used, and the direction (503) toward the first substrate (101) is a material having a positive dielectric anisotropy. The direction is non-parallel to the electric field direction and forms an angle of 45 ° or closer to the electric field direction with respect to the electric field direction. Furthermore, in the case of a material having a negative dielectric anisotropy, it is 45 ° in a direction that is non-perpendicular to the electric field and perpendicular to the electric field.
Alternatively, the direction is closer to the direction perpendicular to the electric field. The rubbing process (504) on the second substrate (102) side is performed in parallel or anti-parallel to the rubbing direction of the first substrate (101).
【0085】このようにして形成された第一の基板(1
01)と第二の基板(102)を重ね合わせて液晶パネ
ルを形成した。前記一対の基板(101)、(102)
は、基板間に直径3μmの球状スペーサーを挟むことで
パネル面内全体で均一な基板間隔となるようにした。ま
た、前記一対の基板(101)、(102)を接着固定
するためにエポキシ系の接着剤でシールした。シールの
パターンは画素領域、周辺駆動回路領域を囲むようにし
た。この後所定の形状に前記一対の基板(101)、
(102)を切断した後、基板間に液晶材料(121)
を注入した。The first substrate (1 thus formed)
01) and the second substrate (102) were overlaid to form a liquid crystal panel. The pair of substrates (101), (102)
A spherical spacer having a diameter of 3 μm was sandwiched between the substrates so that the substrate spacing was uniform over the entire panel surface. Further, the pair of substrates (101) and (102) were sealed with an epoxy adhesive in order to bond and fix them. The seal pattern was made to surround the pixel region and the peripheral drive circuit region. After that, the pair of substrates (101) is formed into a predetermined shape,
After cutting (102), liquid crystal material (121) is provided between the substrates.
Was injected.
【0086】次に偏光板(501)、(502)を基板
の外側に二枚貼り合わせた。偏光板の配置ついて、一対
の偏光板をその光軸(505)、(506)が直交する
ように配置し、いずれか一方の偏光板の光軸、例えば偏
光板(501)の光軸(505)を、ラビング方向(5
03)に平行にした。Next, two polarizing plates (501) and (502) were attached to the outside of the substrate. Regarding the arrangement of the polarizing plates, a pair of polarizing plates are arranged so that their optical axes (505) and (506) are orthogonal to each other, and the optical axis of either one of the polarizing plates, for example, the optical axis (505 of the polarizing plate (501). ) To the rubbing direction (5
It was parallel to 03).
【0087】この液晶電気光学装置の光学特性を測定し
たところ、従来の電極形状からなる液晶ディスプレイよ
り、立ち上がり特性のバラツキの少ない良好な表示が得
られた。The optical characteristics of this liquid crystal electro-optical device were measured. As a result, a good display with less variation in rising characteristics was obtained as compared with a liquid crystal display having a conventional electrode shape.
【0088】本実施例における構成とすれば、駆動回路
を画素部TFTと同一基板内に作製しているため、作製
コストが少なくてすむという利点がある。According to the structure of this embodiment, since the driving circuit is formed on the same substrate as the pixel portion TFT, there is an advantage that the manufacturing cost can be reduced.
【0089】〔実施例2〕図8に本実施例の液晶電気光
学装置の断面図を示す。本実施例では、第一の基板(1
01)及び第二の基板(102)として、実施例1と同
様に画素TFT及び周辺駆動回路を形成した。但し、T
FT保護膜形成後直接配向膜を形成するのではなく、平
坦化膜(801)を形成し、その後配向膜(119)、
(120)を形成した。Example 2 FIG. 8 shows a sectional view of the liquid crystal electro-optical device of this example. In this embodiment, the first substrate (1
01) and the second substrate (102), the pixel TFT and the peripheral drive circuit were formed in the same manner as in Example 1. Where T
After forming the FT protective film, the alignment film is not directly formed, but the flattening film (801) is formed, and then the alignment film (119),
(120) was formed.
【0090】平坦化膜(801)はアクリル系樹脂もし
くはポリイミド系の樹脂から成る材料、ここではアクリ
ル系樹脂を使用した。アクリル系樹脂は2液性の熱硬化
型のものを使用した。平坦化膜の形成は公知のスピンコ
ート法等により行い、膜厚は1〜2μm、ここでは最大
で1.5μmとなるようにした。その結果、TFT等の
素子を形成することで生じた基板表面の段差は大幅に低
減した。The flattening film (801) is made of acrylic resin or polyimide resin, and acrylic resin is used here. As the acrylic resin, a two-component thermosetting type resin was used. The flattening film was formed by a known spin coating method or the like, and the film thickness was set to 1 to 2 μm, here 1.5 μm at maximum. As a result, the step difference on the substrate surface caused by forming the element such as the TFT was significantly reduced.
【0091】その後実施例1と同様に配向膜(11
9)、(120)を形成し、ラビング処理を行った。ラ
ビングの方向は実施例1と同様前記一対の基板(10
1)、(102)間で平行もしくは反平行の関係を成す
ようにした。Thereafter, the alignment film (11
9) and (120) were formed, and rubbing treatment was performed. The rubbing direction is the same as in Example 1, and the pair of substrates (10
The parallel or anti-parallel relationship is established between 1) and (102).
【0092】このようにして作製された第一の基板(1
01)及び第二の基板(102)は、実施例1と同様な
方法で液晶セルとしてセル組され液晶材料(121)を
前記一対の基板(101)、(102)で挟んだ。さら
に、偏光板(501)を実施例1と同様に配置した。The first substrate (1
01) and the second substrate (102) were cell-assembled as a liquid crystal cell in the same manner as in Example 1, and the liquid crystal material (121) was sandwiched between the pair of substrates (101) and (102). Further, a polarizing plate (501) was arranged in the same manner as in Example 1.
【0093】上記の液晶電気光学装置はセル厚のむらに
よる色むらの発生もなく良好な装置を歩留り良く作製す
ることが出来た。In the liquid crystal electro-optical device described above, a good device could be produced with a good yield without occurrence of color unevenness due to uneven cell thickness.
【0094】なお、本実施例ではTFT保護膜形成後平
坦化膜(801)を形成する例を示したが、前記保護膜
(725)の代わりに前記平坦化膜(801)を利用
し、TFT保護膜が同時に基板表面の平坦化を兼ね備え
るような機能を持たせてもよい。また、平坦化膜(80
1)形成後配向膜(119)、(120)を形成しラビ
ング等の配向処理をするのではなく、平坦化膜(80
1)上を直接ラビングしてもよい。このようにすること
でTFT保護膜及び配向膜(119)、(120)を形
成する必要がなくなり、作製工程を大幅に少なくするこ
とが可能となる。In this embodiment, the flattening film (801) is formed after the TFT protective film is formed. However, the flattening film (801) is used instead of the protective film (725) to form a TFT. The protective film may have a function of simultaneously flattening the surface of the substrate. In addition, a flattening film (80
1) Instead of forming alignment films (119) and (120) after formation and performing alignment treatment such as rubbing, a flattening film (80)
1) The top may be rubbed directly. By doing so, it is not necessary to form the TFT protective film and the alignment films (119) and (120), and the number of manufacturing steps can be significantly reduced.
【0095】〔実施例3〕本実施例では実施例1及び実
施例2と同様に周辺駆動回路をも基板上に形成したアク
ティブマトリクス回路とした。図9に本実施例のアクテ
ィブマトリクス基板の作製工程を示す。本実施例では、
第一の基板(101)及び第二の基板(102)として
実施例1と基本的には同様に画素TFT及び周辺駆動回
路を形成した。但し、画素電極として、液晶駆動用電極
(901)及びコモン電極(902)に、ITOを使用
した。[Embodiment 3] In this embodiment, similarly to Embodiments 1 and 2, the peripheral drive circuit is an active matrix circuit formed on the substrate. FIG. 9 shows a process of manufacturing the active matrix substrate of this example. In this embodiment,
As the first substrate (101) and the second substrate (102), pixel TFTs and peripheral drive circuits were formed basically in the same manner as in Example 1. However, ITO was used for the liquid crystal driving electrode (901) and the common electrode (902) as pixel electrodes.
【0096】基板上の各素子、各電極の作製工程として
は、ゲート電極用のアルミニウム等から成る層を形成す
るところまでは実施例1と同様の工程で行い、等方性プ
ラズマエッチングでゲート電極(705)、(70
6)、(707)を形成したのち、公知の方法でITO
を1000〜3000Å成膜し、等方性プラズマエッチ
ングでコモン電極(902)を形成した(図9
(A))。The steps of manufacturing each element and each electrode on the substrate are the same as those in Example 1 up to the step of forming a layer made of aluminum or the like for the gate electrode, and the gate electrode is formed by isotropic plasma etching. (705), (70
After forming 6) and (707), ITO is formed by a known method.
Was deposited to 1000 to 3000Å, and the common electrode (902) was formed by isotropic plasma etching (Fig. 9).
(A)).
【0097】その後周辺駆動回路等の配線用のアルミニ
ウム等からなる層を形成するところまでは実施例1と同
様の工程で行い、等方性プラズマエッチングで周辺駆動
回路の電極・配線(720)、(721)、(722)
及び画素TFTの電極・配線(723)、(724)を
形成したのち、公知の方法でITOを1000〜300
0Å成膜し、等方性プラズマエッチングで液晶駆動用電
極(901)を形成した。この電極は画素TFTのドレ
イン電極(724)と接続している(図9(E))。Thereafter, the same steps as in Example 1 are performed until a layer made of aluminum or the like for wiring of the peripheral drive circuit is formed, and the electrode / wiring (720) of the peripheral drive circuit is formed by isotropic plasma etching. (721), (722)
After forming the electrodes / wirings (723) and (724) of the pixel TFT, 1000 to 300 ITO is formed by a known method.
A 0Å film was formed, and a liquid crystal driving electrode (901) was formed by isotropic plasma etching. This electrode is connected to the drain electrode (724) of the pixel TFT (FIG. 9 (E)).
【0098】次に、TFT保護膜として実施例1の窒化
珪素膜(722)を形成した。その後平坦化膜として実
施例2のような有機樹脂膜(801)を形成してもよ
い。Next, the silicon nitride film (722) of Example 1 was formed as a TFT protective film. After that, an organic resin film (801) as in Example 2 may be formed as a flattening film.
【0099】一方、第二の基板(102)にも上記と同
じ工程で各素子、各電極等が形成された。第一の基板
(101)と第二の基板(102)の配線パターンの関
係は実施例1と同様である。On the other hand, each element, each electrode, etc. were formed on the second substrate (102) in the same process as above. The relationship between the wiring patterns on the first substrate (101) and the second substrate (102) is the same as in the first embodiment.
【0100】このようにして素子・電極等が形成された
一対の基板(101)、(102)は、実施例1に示さ
れる方法で配向処理、シール印刷、基板重ね合わせ・接
着、液晶注入、偏光板設置といった、一連の液晶パネル
作製工程を経て、液晶電気光学装置が作製された。The pair of substrates (101) and (102) on which the elements / electrodes etc. were formed in this manner were subjected to orientation treatment, seal printing, substrate superposition / adhesion, liquid crystal injection, by the method shown in Example 1. A liquid crystal electro-optical device was manufactured through a series of liquid crystal panel manufacturing steps such as installation of a polarizing plate.
【0101】前記液晶電気光学装置は画素電極として透
光性を有するITOを使用したため、画素開口率が高
く、光源からの光を有効利用できる明るいディスプレイ
となった。Since the liquid crystal electro-optical device uses the translucent ITO as the pixel electrode, it has a high pixel aperture ratio and is a bright display that can effectively use the light from the light source.
【0102】〔実施例4〕本実施例では、実施例1、及
び実施例2、及び実施例3で作製した液晶電気光学装置
について、点順次駆動を行い、表示を行った例を示す。[Embodiment 4] This embodiment shows an example in which the liquid crystal electro-optical devices manufactured in Embodiments 1, 2 and 3 are dot-sequentially driven for display.
【0103】本実施例の場合、1画面を形成するのに必
要な映像信号を前記一対の基板で同時に印加した。これ
により1つのフレームが形成され以後これを繰り返すよ
うにした。In the case of the present embodiment, the video signals necessary for forming one screen were simultaneously applied to the pair of substrates. As a result, one frame is formed, and thereafter, this is repeated.
【0104】1つの区間では、一方の基板のゲート線に
走査信号が順次印加され、1本のゲート線が選択されて
いる期間内にサンプリングパルスによってサンプリング
された映像データがソース線に順次ホールドされその直
後にそれぞれの画素に映像データが書き込まれる。画素
に書き込まれた映像データは、液晶および容量成分によ
り1区間保持される。この間他方の基板にも一方の基板
で形成する表示画像と同一のものを形成するため、同一
画素で同一の映像データが印加される。In one section, the scanning signal is sequentially applied to the gate line of one substrate, and the video data sampled by the sampling pulse is sequentially held in the source line within the period in which one gate line is selected. Immediately after that, video data is written in each pixel. The video data written in the pixel is held for one section by the liquid crystal and the capacitive component. During this period, the same image as the display image formed on the other substrate is formed on the other substrate, so that the same image data is applied to the same pixel.
【0105】本実施例では、フレーム周波数を60Hz
とした。従って、1つの区間の周波数は120Hzとな
る。このようにすることで、本実施例のように上下の基
板で映像データの出力をスイッチングしても肉眼では認
識することはできず、あたかも1つの画面が形成・表示
されているように見られた。In this embodiment, the frame frequency is 60 Hz.
And Therefore, the frequency of one section is 120 Hz. By doing so, even if the output of the video data is switched between the upper and lower substrates as in the present embodiment, it cannot be recognized with the naked eye, and it seems as if one screen is formed and displayed. It was
【0106】なお、本実施例では点順次駆動を例として
述べたが、線順次駆動を行ってもよい。In this embodiment, the dot-sequential driving is described as an example, but the line-sequential driving may be performed.
【0107】[0107]
【発明の効果】上記で述べたように本発明は、従来の横
方向電界駆動方式の液晶電気光学装置と比べ、液晶の立
ち上がり特性がよく、簡便な工程で液晶電気光学装置が
得られる。さらに本発明は、画素部の微細化にも対応で
きる。As described above, according to the present invention, the liquid crystal electro-optical device has better rising characteristics of liquid crystal than the conventional lateral electric field driving type liquid crystal electro-optical device and can be obtained by a simple process. Further, the present invention can cope with miniaturization of the pixel portion.
【図1】 実施例1における液晶電気光学装置の画素領
域の概略を示す図。FIG. 1 is a diagram illustrating an outline of a pixel region of a liquid crystal electro-optical device according to a first exemplary embodiment.
【図2】 実施例1における液晶電気光学装置の断面の
概略を示す図FIG. 2 is a diagram showing an outline of a cross section of the liquid crystal electro-optical device in Example 1.
【図3】 従来の液晶電気光学装置において、電極間に
電界が印加された場合の電気力線を示す図。FIG. 3 is a diagram showing lines of electric force when an electric field is applied between electrodes in a conventional liquid crystal electro-optical device.
【図4】 実施例1における液晶電気光学装置におい
て、電極に電界が印加された場合の電気力線を示す図。FIG. 4 is a diagram showing lines of electric force when an electric field is applied to the electrodes in the liquid crystal electro-optical device according to the first embodiment.
【図5】 実施例1における液晶電気光学装置の無電界
時の液晶の配向の概略を示す図。5A and 5B are diagrams showing an outline of alignment of liquid crystals in the liquid crystal electro-optical device in Example 1 when no electric field is applied.
【図6】 実施例1における液晶電気光学装置の電界印
加時の液晶の配向の概略を示す図。6A and 6B are diagrams showing an outline of alignment of liquid crystal when an electric field is applied to the liquid crystal electro-optical device in Example 1. FIG.
【図7】 実施例1における液晶電気光学装置の断面の
概略を示す図。FIG. 7 is a diagram showing an outline of a cross section of the liquid crystal electro-optical device in Example 1.
【図8】 実施例2における液晶電気光学装置の断面の
概略を示す図。FIG. 8 is a diagram showing an outline of a cross section of a liquid crystal electro-optical device in Example 2.
【図9】 実施例3における液晶電気光学装置の断面の
概略を示す図。FIG. 9 is a diagram schematically showing a cross section of a liquid crystal electro-optical device according to a third embodiment.
101、102 基板 103、104 下地膜 105、106 ゲート電極 107、108 コモン電極 109、110 ゲート絶縁膜 111、112 スイッチング素子 113、114 ソース電極 115、116 液晶駆動用電極 117、118 保護膜 119、120 配向膜 121 液晶層(液晶分子) 122、123 液晶分子 301、303 基板 302、305 電極 304、306 電気力線 307 電気力線の変形する方向(矢
印) 501 偏光板(検光子) 502 偏光板(偏光子) 503、504 ラビング方向 505、506 偏光板の光軸 701、702、703 活性層 704 ゲート絶縁膜(酸化珪素) 705、706、707 ゲート線 708、902 コモン(共通)電極 709、710、711 弱いN型領域 712、713 フォトレジストのマスク 714、715 強いN型領域(ソース/ドレ
イン) 716 低濃度不純物領域 717 フォトレジストのマスク 718 強いP型領域(ソース/ドレ
イン) 719 層間絶縁膜 720〜724、901 周辺駆動回路、画素TFTの
電極・配線 725 窒化珪素膜 801 平坦化膜101, 102 Substrate 103, 104 Underlayer film 105, 106 Gate electrode 107, 108 Common electrode 109, 110 Gate insulating film 111, 112 Switching element 113, 114 Source electrode 115, 116 Liquid crystal driving electrode 117, 118 Protective film 119, 120 Alignment film 121 Liquid crystal layer (liquid crystal molecule) 122, 123 Liquid crystal molecule 301, 303 Substrate 302, 305 Electrode 304, 306 Electric force line 307 Direction of deformation of electric force line (arrow) 501 Polarizer (analyzer) 502 Polarizer ( Polarizer) 503, 504 Rubbing direction 505, 506 Optical axis of polarizing plate 701, 702, 703 Active layer 704 Gate insulating film (silicon oxide) 705, 706, 707 Gate line 708, 902 Common electrode 709, 710, 711 Weak N-type region 712, 13 photoresist masks 714, 715 strong N-type regions (source / drain) 716 low concentration impurity regions 717 photoresist mask 718 strong P-type regions (source / drain) 719 interlayer insulating films 720-724, 901 peripheral drive circuits, Pixel TFT electrode / wiring 725 Silicon nitride film 801 Flattening film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 寺本 聡 神奈川県厚木市長谷398番地 株式会社半 導体エネルギー研究所内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Satoshi Teramoto 398 Hase, Atsugi City, Kanagawa Prefecture Inside Semiconductor Energy Research Institute Co., Ltd.
Claims (8)
る液晶駆動用の一対の電極を含み、 前記一対の電極は互いに略平行に配置された部分を有
し、 前記電極を介して液晶層に電界を印加する電界印加手段
を備えた液晶電気光学装置であって、 前記いずれか一方の基板上の一対の電極間に形成される
電界は、他方の基板上の一対の電極間に形成された電界
強度により電界分布が制御されることを特徴とする液晶
電気光学装置。1. A pair of substrates, at least one of which is transparent, an electrode formed on both of the substrates, and a liquid crystal layer sandwiched between the substrates, wherein the electrodes are parallel to a substrate surface. A pair of electrodes for driving a liquid crystal capable of forming an electric field including a direction, the pair of electrodes having portions arranged substantially parallel to each other, and an electric field applying means for applying an electric field to the liquid crystal layer via the electrodes. A liquid crystal electro-optical device comprising: an electric field formed between a pair of electrodes on one of the substrates, the electric field distribution being controlled by an electric field intensity formed between a pair of electrodes on the other substrate. And a liquid crystal electro-optical device.
る液晶駆動用の一対の電極を含み、 前記一対の電極は互いに略平行に配置された部分を有
し、 前記電極を介して液晶層に電界を印加する電界印加手段
を備えた液晶電気光学装置であって、 前記いずれか一方の基板上の一対の電極間に形成される
電界は、他方の基板上の一対の電極間に形成された電界
との相互作用により、セル厚方向において電界分布が均
一化されていることを特徴とする液晶電気光学装置。2. A pair of substrates, at least one of which is transparent, an electrode formed on both of the substrates, and a liquid crystal layer sandwiched between the substrates, wherein the electrodes are parallel to the substrate surface. A pair of electrodes for driving a liquid crystal capable of forming an electric field including a direction, the pair of electrodes having portions arranged substantially parallel to each other, and an electric field applying means for applying an electric field to the liquid crystal layer via the electrodes. In a liquid crystal electro-optical device comprising: an electric field formed between a pair of electrodes on one of the substrates, due to an interaction with an electric field formed between a pair of electrodes on the other substrate, A liquid crystal electro-optical device having a uniform electric field distribution in the cell thickness direction.
る液晶駆動用の一対の電極を含み、 前記一対の電極は互いに略平行に配置された部分を有
し、 前記電極を介して液晶層に電界を印加する電界印加手段
を備えた液晶電気光学装置であって、 前記一対の基板間の電極により、前記液晶層に対してに
同時に同方向の電界を印加することで、一対の基板間の
電界分布を制御することを特徴とする液晶電気光学装
置。3. A pair of substrates, at least one of which is transparent, an electrode formed on both of the substrates, and a liquid crystal layer sandwiched between the substrates, wherein the electrodes are parallel to the substrate surface. A pair of electrodes for driving a liquid crystal capable of forming an electric field including a direction, the pair of electrodes having portions arranged substantially parallel to each other, and an electric field applying means for applying an electric field to the liquid crystal layer via the electrodes. A liquid crystal electro-optical device comprising: a pair of substrates, wherein an electrode between the pair of substrates simultaneously applies an electric field in the same direction to the liquid crystal layer to control an electric field distribution between the pair of substrates. Characteristic liquid crystal electro-optical device.
る液晶駆動用の一対の電極を含み、 前記一対の電極は互いに略平行に配置された部分を有
し、 前記電極を介して液晶層に電界を印加する電界印加手段
を備え、 前記一対の電極は、両方の基板において互いに対向する
位置に配置されていることを特徴とする液晶電気光学装
置。4. A pair of substrates, at least one of which is transparent, an electrode formed on both of the substrates, and a liquid crystal layer sandwiched between the substrates, wherein the electrodes are parallel to the substrate surface. A pair of electrodes for driving a liquid crystal capable of forming an electric field including a direction, the pair of electrodes having portions arranged substantially parallel to each other, and an electric field applying means for applying an electric field to the liquid crystal layer via the electrodes. The liquid crystal electro-optical device according to claim 1, wherein the pair of electrodes are arranged at positions facing each other on both substrates.
つの電極は透光性を有することを特徴とする液晶電気光
学装置。5. The liquid crystal electro-optical device according to claim 1, wherein at least one electrode has a light-transmitting property.
を有することを特徴とする液晶電気光学装置。6. The liquid crystal electro-optical device according to claim 1, wherein the electrode has a curved cross section.
型素子が接続されていることを特徴とする液晶電気光学
装置。7. The liquid crystal electro-optical device according to claim 1, wherein a non-linear element is connected to the electrode.
一方もしくは両方の基板には、周辺駆動回路が形成され
ていることを特徴とする液晶電気光学装置。8. The liquid crystal electro-optical device according to claim 1, wherein a peripheral drive circuit is formed on one or both of the substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35333095A JPH09185080A (en) | 1995-12-28 | 1995-12-28 | Liquid crystal electro-optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35333095A JPH09185080A (en) | 1995-12-28 | 1995-12-28 | Liquid crystal electro-optical device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005130540A Division JP2005258463A (en) | 2005-04-27 | 2005-04-27 | Liquid crystal electrooptical device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09185080A true JPH09185080A (en) | 1997-07-15 |
Family
ID=18430120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35333095A Withdrawn JPH09185080A (en) | 1995-12-28 | 1995-12-28 | Liquid crystal electro-optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09185080A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396555B1 (en) | 1998-07-24 | 2002-05-28 | Nec Corporation | LCD panel in which the scanning line and the line connected to the drain of the TFT are parallel |
| KR20020078492A (en) * | 2001-04-03 | 2002-10-19 | 주식회사 현대 디스플레이 테크놀로지 | Apparatus for Liquid Crystal Display |
| KR100360041B1 (en) * | 1998-06-23 | 2002-11-04 | 후지쯔 가부시끼가이샤 | Liquid crystal display device |
| KR100488923B1 (en) * | 1997-06-25 | 2005-09-12 | 비오이 하이디스 테크놀로지 주식회사 | Liquid crystal display |
| JP2005537520A (en) * | 2002-09-04 | 2005-12-08 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | ELECTRO-OPTICAL LIGHT MODULATION ELEMENT CONTAINING MEDIUM HAVING OPTICALLY ISOTOPE PHASE, AND ELECTRO-OPTICAL DISPLAY HAVING SAME |
| FR2871249A1 (en) * | 2004-06-04 | 2005-12-09 | Lg Philips Lcd Co Ltd | In-plane switching mode LCD device for use in e.g. television, has pixel electrode positioned adjacent to common electrode on pixel region, where electrodes are shaped such that upper surface area differs from lower surface area |
| US9513515B2 (en) | 2013-09-09 | 2016-12-06 | Samsung Display Co., Ltd. | Liquid crystal display having improved response speed |
-
1995
- 1995-12-28 JP JP35333095A patent/JPH09185080A/en not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100488923B1 (en) * | 1997-06-25 | 2005-09-12 | 비오이 하이디스 테크놀로지 주식회사 | Liquid crystal display |
| KR100360041B1 (en) * | 1998-06-23 | 2002-11-04 | 후지쯔 가부시끼가이샤 | Liquid crystal display device |
| US6396555B1 (en) | 1998-07-24 | 2002-05-28 | Nec Corporation | LCD panel in which the scanning line and the line connected to the drain of the TFT are parallel |
| KR20020078492A (en) * | 2001-04-03 | 2002-10-19 | 주식회사 현대 디스플레이 테크놀로지 | Apparatus for Liquid Crystal Display |
| JP2005537520A (en) * | 2002-09-04 | 2005-12-08 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | ELECTRO-OPTICAL LIGHT MODULATION ELEMENT CONTAINING MEDIUM HAVING OPTICALLY ISOTOPE PHASE, AND ELECTRO-OPTICAL DISPLAY HAVING SAME |
| FR2871249A1 (en) * | 2004-06-04 | 2005-12-09 | Lg Philips Lcd Co Ltd | In-plane switching mode LCD device for use in e.g. television, has pixel electrode positioned adjacent to common electrode on pixel region, where electrodes are shaped such that upper surface area differs from lower surface area |
| US7420640B2 (en) | 2004-06-04 | 2008-09-02 | Lg Display Co., Ltd. | In-plane switching mode liquid crystal device and method for manufacturing the same |
| US9513515B2 (en) | 2013-09-09 | 2016-12-06 | Samsung Display Co., Ltd. | Liquid crystal display having improved response speed |
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