JPH09186151A - Semiconductor device oxidizer and oxide film forming method using the same - Google Patents
Semiconductor device oxidizer and oxide film forming method using the sameInfo
- Publication number
- JPH09186151A JPH09186151A JP8348178A JP34817896A JPH09186151A JP H09186151 A JPH09186151 A JP H09186151A JP 8348178 A JP8348178 A JP 8348178A JP 34817896 A JP34817896 A JP 34817896A JP H09186151 A JPH09186151 A JP H09186151A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- thickness
- grown
- film growth
- growth time
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
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- Formation Of Insulating Films (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】
【課題】 酸化装置及びこれを用いた酸化膜形成方法を
提供する。
【解決手段】 ウェーハに所望の厚さの酸化膜を形成す
るため酸化膜成長手段、酸化膜厚手段及び制御手段を具
備した酸化装置を用いるが、前記酸化装置の中、制御手
段は酸化膜のターゲット厚さに該当する酸化膜成長時間
を自動に算出することにより、作業が単純化され、各バ
ッチ毎に酸化膜の厚さが変動される現象を最小化して工
程に対した信頼性の向上とより均一な製品を生産しう
る。
(57) Abstract: An oxidation device and an oxide film forming method using the same are provided. SOLUTION: In order to form an oxide film having a desired thickness on a wafer, an oxidizer equipped with an oxide film growth means, an oxide film thickness means and a control means is used. By automatically calculating the oxide film growth time corresponding to the target thickness, the work is simplified and the phenomenon that the oxide film thickness varies from batch to batch is minimized to improve process reliability. And can produce a more uniform product.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体製造装置及び
これを用いた半導体製造方法に係り、特に半導体基板上
に所望の厚さの酸化膜を形成するための酸化装置及びこ
れを用いた酸化膜形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method using the same, and more particularly to an oxidation apparatus for forming an oxide film having a desired thickness on a semiconductor substrate and an oxide film using the same. It relates to a forming method.
【０００２】[0002]
【従来の技術】図１は従来の技術による半導体素子の酸
化膜形成方法を説明するための順序図である。2. Description of the Related Art FIG. 1 is a flow chart for explaining a conventional oxide film forming method for a semiconductor device.
【０００３】Ｓ１０段階ではウェーハに成長させようと
する酸化膜のターゲット厚さに該当する酸化膜を成長す
るに必要な時間を決め、Ｓ１１段階では酸化装置で前記
時間の間酸化膜が成長される。In step S10, the time required to grow an oxide film corresponding to the target thickness of the oxide film to be grown on the wafer is determined, and in step S11, the oxide film is grown in the oxidizing device for the time. .
【０００４】Ｓ１２段階では酸化膜厚測定装置を用いて
前記ウェーハに成長された酸化膜の厚さを測った後、Ｓ
１３段階では前記測定厚さと前記ターゲット厚さとを比
較する。In step S12, the thickness of the oxide film grown on the wafer is measured using an oxide film thickness measuring device, and then S
In step 13, the measured thickness is compared with the target thickness.
【０００５】前記測定厚さが前記ターゲット厚さと一致
しないとその差に該当する酸化膜をさらに成長させるた
めの時間を算出し、前記測定厚さが前記ターゲット厚さ
と一致するまでに前記Ｓ１０〜Ｓ１２段階を繰返す。If the measured thickness does not match the target thickness, a time for further growing an oxide film corresponding to the difference is calculated, and steps S10 to S12 are performed until the measured thickness matches the target thickness. Repeat the steps.
【０００６】このような従来の酸化膜形成工程は酸化装
置自体の多様な条件に因して各バッチ毎の酸化膜の厚さ
が一致しなく、各バッチ結果成長させようとする酸化膜
のターゲット厚さほど形成されない場合は再び酸化膜成
長時間を一々手で計算して酸化膜を成長させるべき短所
がある。In such a conventional oxide film forming process, the thickness of the oxide film in each batch does not match due to various conditions of the oxidation apparatus itself, and the target of the oxide film to be grown as a result of each batch. If the oxide film is not formed to a thickness, the oxide film growth time should be calculated again by hand to grow the oxide film.
【０００７】そして、各運用者の酸化膜厚さに対した酸
化膜の成長時間を算出する方法が異なるので正確な算出
ができなく、各バッチごとに結果を確認すべき短所があ
る。Since the method for calculating the growth time of the oxide film is different depending on the oxide film thickness of each operator, accurate calculation cannot be performed, and there is a disadvantage that the result must be confirmed for each batch.
【０００８】[0008]
【発明が解決しょうとする課題】本発明の目的は手作業
で酸化膜成長時間を算出することにより各バッチ毎に成
長された酸化膜厚さが変わる現象を最小化するための酸
化装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an oxidizer for minimizing the phenomenon in which the grown oxide film thickness changes for each batch by manually calculating the oxide film growth time. To do.
【０００９】本発明の他の目的は前記酸化装置を用いた
半導体素子の酸化膜形成方法を提供することにある。Another object of the present invention is to provide a method for forming an oxide film of a semiconductor device using the above-mentioned oxidation device.
【００１０】[0010]
【課題を解決するための手段】前記目的を達成するため
本発明は、ウェーハ上に成長させようとする酸化膜のタ
ーゲット厚さ及びウェーハ上に既に成長された酸化膜の
測定厚さと前記ターゲット厚さの差に該当する酸化膜の
厚さの中何れか１つで成長するための酸化膜成長時間を
算出し、前記酸化膜成長時間を出力する制御手段と、前
記制御手段から出力された酸化膜成長時間を入力として
前記酸化膜成長時間の間前記ウェーハ上に酸化膜を成長
させる酸化膜成長手段と、前記酸化膜成長手段から成長
された酸化膜の厚さを測り、これを前記制御手段に入力
する酸化膜厚測定手段とを具備することを特徴とする酸
化装置を提供する。In order to achieve the above object, the present invention provides a target thickness of an oxide film to be grown on a wafer, a measured thickness of an oxide film already grown on the wafer, and the target thickness. The oxide film growth time for growing in any one of the oxide film thicknesses corresponding to the difference in thickness, and outputting the oxide film growth time; and the oxidation output from the control means. An oxide film growth means for growing an oxide film on the wafer during the oxide film growth time with the film growth time as an input, and a thickness of the oxide film grown from the oxide film growth means are measured, and this is measured by the control means. And an oxide film thickness measuring means for inputting to the oxidation device.
【００１１】前記他の目的を達成するため本発明は、酸
化膜成長手段、酸化膜厚測定手段、制御手段を具備した
酸化装置を用いた半導体素子の酸化膜形成方法におい
て、ウェーハ上に成長させようとする酸化膜のターゲッ
ト厚さを制御手段に入力した後、前記ターゲット厚さに
該当する酸化膜成長時間を算出する第１段階と、算出さ
れた前記酸化膜成長時間を酸化膜成長手段に入力させた
後、前記酸化膜成長時間の間前記ウェーハ上に酸化膜を
成長させる第２段階と、前記ウェーハ上に成長された酸
化膜の厚さを酸化膜厚測定手段で測定した後、これを前
記制御手段に入力する第３段階と、前記制御手段で前記
ターゲット厚さと前記測定厚さとを比較して前記ターゲ
ット厚さと前記測定厚さとの差に該当する酸化膜成長時
間を算出する第４段階と、前記第４段階から算出された
酸化膜成長時間を前記酸化膜成長手段に入力した後、前
記ターゲット厚さと測定厚さとが一致するまでに前記第
２段階以降の段階等を繰返す第５段階とを含むことを特
徴とする半導体素子の酸化膜形成方法を提供する。In order to achieve the above-mentioned other object, the present invention is a method for forming an oxide film of a semiconductor element using an oxidation device equipped with an oxide film growth means, an oxide film thickness measurement means, and a control means. After inputting the target thickness of the oxide film to the control means, the first step of calculating the oxide film growth time corresponding to the target thickness, and the calculated oxide film growth time to the oxide film growth means. After inputting, a second step of growing an oxide film on the wafer during the oxide film growth time, and measuring the thickness of the oxide film grown on the wafer by an oxide film thickness measuring means, Is input to the control means, and the control means compares the target thickness with the measured thickness to calculate an oxide film growth time corresponding to a difference between the target thickness and the measured thickness. Step And, after inputting the oxide film growth time calculated from the fourth step to the oxide film growth means, repeating the steps from the second step and the like until the target thickness and the measured thickness coincide with each other. There is provided a method for forming an oxide film of a semiconductor device, the method including:
【００１２】[0012]
【発明の実施の形態】以下、添付した図面に基づき本発
明を詳しく説明する。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
【００１３】図２は本発明による半導体素子の製造のた
めの酸化装置を説明するブロック図である。FIG. 2 is a block diagram illustrating an oxidizer for manufacturing a semiconductor device according to the present invention.
【００１４】部材番号３は酸化膜成長手段を、４は酸化
膜厚測定手段を各々示す。Member number 3 is oxide film growth means, and reference numeral 4 is oxide film thickness measuring means.
【００１５】部材番号５は制御手段であって、データの
貯蔵・比較・演算を担当するホストコンピューター１と
入出力を担当するターミナル２で構成される。The member number 5 is a control means, and is composed of a host computer 1 which is in charge of storing, comparing and calculating data and a terminal 2 which is in charge of input / output.
【００１６】ウェーハ上に成長させようとする酸化膜の
ターゲット厚さ及びウェーハ上に成長された酸化膜の測
定厚さの中、何れか１つがターミナル２を通してホスト
コンピューター１に入力されると、前記ホストコンピュ
ーター１は前記ターゲット厚さを成長させるための酸化
膜成長時間及び前記ターゲット厚さと前記測定厚さとを
比較して前記ターゲット厚さが前記測定厚さより大きい
場合、その差に該当する酸化膜の厚さを成長させるため
の酸化膜成長時間の中何れか１つを算出してこれを前記
ターミナル２に出力する。When any one of the target thickness of the oxide film to be grown on the wafer and the measured thickness of the oxide film grown on the wafer is input to the host computer 1 through the terminal 2, The host computer 1 compares the oxide film growth time for growing the target thickness and the target thickness with the measured thickness, and if the target thickness is greater than the measured thickness, the difference in the oxide film corresponding to the difference is calculated. Any one of the oxide film growth times for growing the thickness is calculated and output to the terminal 2.
【００１７】前記酸化膜成長時間は運用者が酸化膜成長
手段で多くの酸化工程を実施した後、酸化膜成長時間に
対した酸化膜厚さを貯蔵して置いたデータにより決定さ
れる。The oxide film growth time is determined by data in which an operator stores many oxide film thicknesses with respect to the oxide film growth time after performing many oxidation processes by the oxide film growth means.
【００１８】前記酸化膜成長手段３は前記制御手段５か
ら酸化膜を成長させるため決定された時間を受けてこの
時間の間ウェーハ上に酸化膜を成長する。The oxide film growth means 3 receives a predetermined time for growing an oxide film from the control means 5 and grows an oxide film on a wafer during this time.
【００１９】前記酸化膜厚測定手段４は成長された酸化
膜の厚さを測定し、前記測定厚さを前記制御手段５のホ
ストコンピューター１にフィードバックする。The oxide film thickness measuring means 4 measures the thickness of the grown oxide film and feeds back the measured thickness to the host computer 1 of the control means 5.
【００２０】図３は前記酸化装置を用いて半導体素子の
酸化膜形成方法を説明するための順序図である。FIG. 3 is a flow chart for explaining a method of forming an oxide film on a semiconductor device by using the oxidation device.
【００２１】Ｓ１０１段階では制御手段を用いてウェー
ハ上に成長させようとする酸化膜のターゲット厚さに該
当する酸化膜成長時間が決められ、Ｓ１０２段階では前
記時間の間酸化膜成長手段で前記酸化膜が成長される。At step S101, the control means is used to determine the oxide film growth time corresponding to the target thickness of the oxide film to be grown on the wafer. The film is grown.
【００２２】Ｓ１０３段階では酸化膜厚測定手段で前記
酸化工程の間ウェーハに成長された酸化膜の厚さを測定
した後、Ｓ１０４段階では制御手段で前記測定厚さと前
記ターゲット厚さとを比較する。In step S103, the thickness of the oxide film grown on the wafer during the oxidation process is measured by the oxide film thickness measuring means, and in step S104, the measured thickness is compared with the target thickness by the control means.
【００２３】このとき、Ｓ１０４段階では前記ターゲッ
ト厚さと前記測定厚さとが一致するかを比較する。At this time, in step S104, it is compared whether the target thickness and the measured thickness match.
【００２４】前記ターゲット厚さが前記測定厚さより大
きいとその厚さの差に該当する酸化膜を成長させるため
前記Ｓ１０１段階からＳ１０３段階を繰返すべきであ
る。If the target thickness is greater than the measured thickness, the steps S101 to S103 should be repeated in order to grow an oxide film corresponding to the thickness difference.
【００２５】前記制御手段に内臓された酸化膜の成長時
間を算出するための演算式は次のようである。The arithmetic expression for calculating the growth time of the oxide film incorporated in the control means is as follows.
【００２６】 ｔ＝（ｔ1’×Ｒ）＋（ｔ2×（１−Ｒ））、 ｔ1’＝ｔ1−（ＴＯＸavg、１−Ｔ）／Ｇ1、 ｔ2’＝ｔ2−（ＴＯＸavg、２−Ｔ）／Ｇ2、 Ｒ＝ｔ1’／（ｔ1’＋ｔ2’）T = (t 1 ′ × R) + (t 2 × (1−R)), t 1 ′ = t 1 − (TOX avg , 1−T) / G 1 , t 2 ′ = t 2 − (TOX avg, 2-T) / G 2, R = t 1 '/ (t 1' + t 2 ')
【００２７】このとき、ｔは次の酸化工程で要求される
酸化膜成長時間であり、ｔ1は現在の酸化工程での酸化
膜成長時間を、ｔ2は直前の酸化工程（現在の工程のす
ぐ前の工程）の酸化膜成長時間を、ＴＯＸavg、１とＴ
ＯＸavg、２は各々前記ｔ1、ｔ2の間に成長された酸化
膜の厚さの平均を、Ｔは酸化膜のターゲット厚さを、そ
してＧ1及びＧ2は各々前記ｔ1及びｔ2の間の酸化膜の成
長率を示す。At this time, t is an oxide film growth time required in the next oxidation step, t 1 is an oxide film growth time in the current oxidation step, and t 2 is a previous oxidation step (of the current oxidation step). The oxide film growth time in the immediately preceding process) is set to TOX avg , 1 and T
OX avg , 2 is the average thickness of the oxide film grown during the above t 1 and t 2 , T is the target thickness of the oxide film, and G 1 and G 2 are the above t 1 and t, respectively. The growth rate of the oxide film between 2 is shown.
【００２８】このとき、前記ＴＯＸavg、１とＴＯ
Ｘavg、２は測定した値の中、最小値と最大値を除けた
残り値で構成されたデータの平均を示す。At this time, the TOX avg , 1 and TO
X avg , 2 represents the average of the data composed of the remaining values of the measured values excluding the minimum and maximum values.
【００２９】前記データの中最小データと最大データと
の差が運用者が決めたスパン値（Ｓ＝Ｔ×Ｘ）より大き
い場合、前記ＴＯＸavg、１とＴＯＸavg、２は前記スパ
ン値に代置される。If the difference between the minimum and maximum data among the data is larger than the span value (S = T × X) determined by the operator, the TOX avg , 1 and TOX avg , 2 are replaced by the span value. Placed.
【００３０】即ち、測定された酸化膜の厚さの変化量が
大きい場合前記式で酸化膜の工程時間を算出した後、酸
化工程を実施すると工程事故が発生するのでこれを防止
するため運用者は多くの工程後決定した値（Ｘ）を使用
して工程を進行する。That is, when the measured amount of change in the thickness of the oxide film is large, the process time of the oxide film is calculated by the above formula, and then the oxidation process is performed, which causes a process accident. Runs the process using the value (X) determined after many processes.
【００３１】[0031]
【発明の効果】本発明による酸化装置及びこれを用いた
酸化膜形成方法は、酸化膜成長手段、酸化膜厚手段、制
御手段を具備した酸化装置を用いて成長させようとする
酸化膜のターゲット厚さに該当する酸化膜成長時間を自
動に算出する。よって、作業が単純化され、各バッチ毎
に酸化膜の厚さが変動される現象を最小化して工程に対
した信頼性の向上とより均一な製品を生産しうる。According to the present invention, there is provided an oxidation apparatus and an oxide film forming method using the same, in which an oxide film target to be grown using an oxidation apparatus equipped with an oxide film growth means, an oxide film thickness means, and a control means. The oxide film growth time corresponding to the thickness is automatically calculated. Therefore, the work is simplified, the phenomenon that the thickness of the oxide film is changed for each batch is minimized, and the reliability of the process is improved and a more uniform product can be produced.
【００３２】本発明はこれに限定されなく、多くの変形
が本発明の技術的思想内で当分野の通常の知識を有する
ものにより可能であることは明白である。The present invention is not limited to this, and it is obvious that many modifications can be made by those having ordinary skill in the art within the technical idea of the present invention.
【図１】 従来の技術による半導体素子の酸化膜形成方
法を説明するための順序図ある。FIG. 1 is a flow chart illustrating a conventional method of forming an oxide film on a semiconductor device.
【図２】 本発明による半導体素子の製造のための酸化
装置を説明するブロック図ある。FIG. 2 is a block diagram illustrating an oxidation apparatus for manufacturing a semiconductor device according to the present invention.
【図３】 前記酸化装置を用いた半導体素子の酸化膜形
成方法を説明するための順序図である。FIG. 3 is a flow chart illustrating a method of forming an oxide film on a semiconductor device using the oxidation device.
３ 酸化膜成長手段、４ 酸化膜厚測定手段、５ 制御
手段3 oxide film growth means, 4 oxide film thickness measurement means, 5 control means
───────────────────────────────────────────────────── フロントページの続き (72)発明者 朴 贊植 大韓民国京畿道水原市八達區遠川洞35番地 住公アパート106棟709號 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor, Park Sung-Ke, 35, Yatcheon-dong, Daedae-ro, Suwon-si, Gyeonggi-do, Republic of Korea
Claims (4)
厚さ、ウェーハ上に既に成長された酸化膜の測定厚さと
前記ターゲット厚さの差に該当する酸化膜の厚さの中何
れか１つで成長するための酸化膜成長時間を算出し、前
記酸化膜成長時間を出力する制御手段と、 前記制御手段から出力された酸化膜成長時間を入力とし
て前記酸化膜成長時間の間前記ウェーハ上に酸化膜を成
長させる酸化膜成長手段と、 前記酸化膜成長手段から成長された酸化膜の厚さを測
り、これを前記制御手段に入力する酸化膜厚測定手段と
を具備することを特徴とする半導体素子の酸化装置。1. A target thickness of an oxide film to be grown, a measured thickness of an oxide film already grown on a wafer, and a thickness of the oxide film corresponding to a difference between the target thicknesses. Calculating the oxide film growth time for growing in, the control means for outputting the oxide film growth time, and the oxide film growth time output from the control means as an input on the wafer during the oxide film growth time An oxide film growth means for growing an oxide film, and an oxide film thickness measuring means for measuring the thickness of the oxide film grown from the oxide film growth means and inputting the measured thickness to the control means. Semiconductor device oxidation equipment.
厚さを制御手段に入力した後、前記ターゲット厚さに該
当する酸化膜成長時間を算出する第１段階と、 算出された前記酸化膜成長時間を酸化膜成長手段に入力
させた後、前記酸化膜成長時間の間前記ウェーハ上に酸
化膜を成長させる第２段階と、 前記ウェーハ上に成長された酸化膜の厚さを酸化膜厚測
定手段で測定した後、これを前記制御手段に入力する第
３段階と、 前記制御手段で前記ターゲット厚さと前記測定厚さとを
比較して前記ターゲット厚さと前記測定厚さとの差に該
当する酸化膜成長時間を算出する第４段階と、 前記第４段階から算出された酸化膜成長時間を前記酸化
膜成長手段に入力した後、前記ターゲット厚さと測定厚
さとが一致するまでに前記第２段階以降の段階等を繰返
す第５段階とを含むことを特徴とする半導体素子の酸化
膜形成方法。2. A first step of calculating an oxide film growth time corresponding to the target thickness after inputting the target thickness of the oxide film to be grown into the control means, and the calculated oxide film growth. After inputting the time to the oxide film growth means, a second step of growing an oxide film on the wafer for the oxide film growth time, and measuring the thickness of the oxide film grown on the wafer. A third step of inputting this to the control means after measurement by means, and an oxide film corresponding to a difference between the target thickness and the measured thickness by comparing the target thickness and the measured thickness by the control means. After the fourth step of calculating the growth time and the oxide film growth time calculated from the fourth step are input to the oxide film growth means, the second and subsequent steps are performed until the target thickness and the measured thickness match. Stages of Oxide film formation method of a semiconductor device characterized by comprising a fifth step of repeating.
成長時間であるｔ1、ｔ2の工程結果で得られた値を、前
記ＴＯＸavg、１とＴＯＸavg、２は前記ｔ1、ｔ2の間の
成長された酸化膜を測定した値の中、最小値と最大値を
除けた残り値で構成されたデータの平均を、Ｔは酸化膜
のターゲット厚さを、そしてＧ1及びＧ2は前記ｔ1及び
ｔ2の間の酸化膜の成長率を示すことを特徴とする請求
項２に記載の酸化膜形成方法。3. The oxide film growth time t is t = (t 1 '× R) + (t 2 × (1-R)), t 1 ' = t 1- (TOX avg , 1-T) / G 1, t 2 - indicated by '= t 2 (TOX avg, 2-T) / G 2, R = t 1' / (t 1 '+ t 2'), this time, t 1 'and t 2' oxidation value obtained in t 1, t 2 steps result is an oxide film growth time of the previous step, the TOX avg, 1 and TOX avg, 2 is grown between the t 1, t 2 Among the measured values of the film, the average of the data composed of the remaining values excluding the minimum value and the maximum value, T is the target thickness of the oxide film, and G 1 and G 2 are the above t 1 and t 2. The method for forming an oxide film according to claim 2, wherein the growth rate of the oxide film between the two is shown.
されたデータの中、最小データと最大データとの差が運
用者が任意で決めたスパン値（Ｓ＝Ｔ×Ｘ）より大きい
場合、前記酸化膜の厚さの平均（ＴＯＸavg、１とＴＯ
Ｘavg、２）は前記スパン値に代置することを特徴とす
る請求項３記載の酸化膜形成方法。4. The difference between the minimum data and the maximum data among the data composed of the measured thickness of the grown oxide film is larger than the span value (S = T × X) arbitrarily determined by the operator. In this case, the average thickness of the oxide film (TOX avg , 1 and TO
The oxide film forming method according to claim 3, wherein X avg , 2) is substituted for the span value.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1995-P-059505 | 1995-12-27 | ||
| KR1019950059505A KR0165320B1 (en) | 1995-12-27 | 1995-12-27 | Method for establishing soaktime of process semiconductor oxidation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09186151A true JPH09186151A (en) | 1997-07-15 |
Family
ID=19445217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8348178A Pending JPH09186151A (en) | 1995-12-27 | 1996-12-26 | Semiconductor device oxidizer and oxide film forming method using the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH09186151A (en) |
| KR (1) | KR0165320B1 (en) |
| DE (1) | DE19652741B4 (en) |
| GB (1) | GB2308733B (en) |
| TW (1) | TW401610B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003506899A (en) * | 1999-08-10 | 2003-02-18 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | Method and apparatus for performing run-to-run control in a batch manufacturing environment |
| KR100734526B1 (en) * | 1999-08-10 | 2007-07-03 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | Method, apparatus, and / or storage device for correcting overlay control errors |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033921A (en) * | 1998-04-06 | 2000-03-07 | Advanced Micro Devices, Inc. | Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface |
| CN1437765A (en) * | 2000-05-25 | 2003-08-20 | 先进微装置公司 | Method for controlling well leakage for trench isolations of differing depths |
| US6625513B1 (en) * | 2000-08-15 | 2003-09-23 | Applied Materials, Inc. | Run-to-run control over semiconductor processing tool based upon mirror image target |
| JP3993396B2 (en) * | 2001-03-30 | 2007-10-17 | 株式会社東芝 | Manufacturing method of semiconductor device |
-
1995
- 1995-12-27 KR KR1019950059505A patent/KR0165320B1/en not_active Expired - Fee Related
-
1996
- 1996-12-04 GB GB9625267A patent/GB2308733B/en not_active Expired - Lifetime
- 1996-12-18 DE DE19652741A patent/DE19652741B4/en not_active Expired - Fee Related
- 1996-12-19 TW TW085115714A patent/TW401610B/en not_active IP Right Cessation
- 1996-12-26 JP JP8348178A patent/JPH09186151A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003506899A (en) * | 1999-08-10 | 2003-02-18 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | Method and apparatus for performing run-to-run control in a batch manufacturing environment |
| KR100734526B1 (en) * | 1999-08-10 | 2007-07-03 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | Method, apparatus, and / or storage device for correcting overlay control errors |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2308733B (en) | 2000-07-05 |
| DE19652741A1 (en) | 1997-07-03 |
| KR0165320B1 (en) | 1999-02-01 |
| DE19652741B4 (en) | 2007-07-05 |
| TW401610B (en) | 2000-08-11 |
| GB9625267D0 (en) | 1997-01-22 |
| GB2308733A (en) | 1997-07-02 |
| KR970054573A (en) | 1997-07-31 |
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