JPH09186502A - High-temperature superconducting dual-mode five-pole bandpass filter with perturbation structure and manufacturing method thereof - Google Patents

Abstract

(57) 【Abstract】 PROBLEM TO BE SOLVED: To use a high-temperature superconducting epitaxial thin film having excellent microwave characteristics, to simplify the manufacturing method, and to realize miniaturization and high performance. 5
Provided are a pole band pass filter and a method for manufacturing the same. SOLUTION: An MgO single crystal substrate 5 having excellent microwave characteristics; and signal transmission input / output terminals 1a, 1 formed on one corner of the single crystal substrate 5 and having a pad gold thin film 2 deposited thereon.
b; the input / output terminals 1a and 1b above the single crystal substrate 5
A circuit pattern 7 of a high-temperature superconducting dual-mode five-pole bandpass filter in which two annular resonators having a perturbation structure for controlling or filtering signal transmission energy are integrated between the microstrip coupling line 4 and the microstrip coupling line 4; The ground plane metal thin film 6 deposited under the crystal substrate 5 is included.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dual-mode five-pole bandpass filter having a perturbation structure for the X-band, which is one of the core parts constituting the front end of a receiving system for RF and microwave communications, and its manufacture. More particularly, the present invention relates to a high-temperature superconducting dual-mode 5-pole bandpass filter and a method for manufacturing the same.

[0002]

2. Description of the Related Art Generally, with the explosive increase in demand for radio services toward the 21st century, the development of excellent information communication systems capable of processing high-quality, large-capacity information at high speed is extremely fast. Taking advantage of the information and communication network construction plan, its importance has grown significantly. The use of radio waves in various industrial fields as well as communication and broadcasting is extremely wide ranging from the microwave to the submillimeter wave band. For this reason, original development in this field is of high importance,
Urgency is also very high.

Recently, as the need for wireless communication and mobile communication equipment having excellent performance has become urgent, microwave communication parts using a high temperature superconducting thin film have been receiving more and more attention, and cooling equipments (cryocoolers). While the miniaturization and higher performance of the product has become a reality, research and development for communication components are becoming more active.

The microwave filter is a core element that constitutes a core part of communication equipment such as mobile communication and satellite communication. In order to develop a communication system with excellent performance, various types of filters, filter tanks, Support parts,
In addition, many special cables and electronic circuits that connect them are required. For this reason, it was difficult to reduce the size of the device.

Therefore, along with the development of the ultra-compact cooler, the development of light, thin, short and compact high-temperature superconducting microwave filters and various microwave parts manufactured with good quality thin films has become urgent.

[0006] Therefore, in order to efficiently utilize limited radio wave resources, not only the development of materials exhibiting extremely excellent microwave characteristics, but also high performance, high reliability, and miniaturization are achieved. The development of microwave components (subsystems) to obtain is an urgent situation.

In such a situation, a high degree of goodness (Q-fac
A high-temperature superconductor that exhibits a tor) and has no loss and no resistance is known as a material very suitable for improving the characteristics and miniaturizing the microwave communication component.

Therefore, MgO having excellent microwave characteristics,
LaAlO ₃ , NdGaO ₃ , sapphire (Sapphi
re)) and other high-quality high-temperature superconducting epitaxial thin films grown on a single-crystal substrate, and are optimally designed for microwave devices (eg, resonators, band / low-pass filters, delay lines, etc.) and circuits ( For example, a high temperature superconducting microwave monolithic integrated circuit (HTS-MMIC) that is easy to fabricate.
It is expected that the miniaturization and high performance of microwave components can be achieved by developing (s) etc.).

On the other hand, in order to develop various microwave elements used for core parts for microwave communication systems, microwave elements manufactured by design, manufacture and evaluation are
It must exhibit loss characteristics that closely match the theoretical value (design value).

[0010]

However, the growth of a high temperature superconducting epitaxial thin film having excellent microwave characteristics and the development of a dielectric single crystal substrate for thin film production, a lithography process for increasing the sharpness of a circuit pattern, The development of test jigs for measuring low-temperature microwave characteristics and the development of ultra-compact low-temperature cooling equipment remain many issues to be solved. Furthermore, it must be able to be actively utilized for advanced radio wave utilization technology in the microwave band.

Therefore, the present invention was devised under such a technical background, and an object thereof is to use a high-temperature superconducting epitaxial thin film excellent in microwave characteristics and to provide a simple manufacturing method. Accordingly, it is an object of the present invention to provide a high-temperature superconducting dual-mode five-pole bandpass filter having a perturbation structure that can be miniaturized and have high performance, and a manufacturing method thereof.

[0012]

According to the present invention for achieving the above object, the circuit pattern of an annular high-temperature superconducting dual-mode five-pole bandpass filter having a perturbation structure for X-band is based on the microwave filter design theory. Based on this, we designed a dual-mode resonator with a perturbation structure and a dual-mode bandpass filter that integrates it, and optimized it by using a microwave component development design system (S / W: Supercompact ^™ ) as software. After that, a mask (circuit original plate) for manufacturing a microwave device provided with an optimum filter pattern is manufactured, and the manufactured epi thin film and mask are realized by a fine patterning process such as photolithography and etching (etching) process. It is characterized by being done.

Further, the present invention provides an M having good microwave characteristics.
gO (dielectric constant = 9.6) single crystal substrate (size: 1.5
cm × 1.5 cm × 0.5 cmt) to produce a high-quality high-temperature superconducting thin film, and a Ti layer / A for a ground plane.
By forming a g-layer double metal thin film, excellent contact and alignment with a microwave test-jig can be achieved.

Another feature of the present invention is that an annular high temperature superconducting dual-mode five-pole bandpass filter having a perturbation structure for X-band has a MgO single crystal substrate excellent in microwave characteristics; and an upper portion of the single crystal substrate. A metal thin film for pads, which is formed in one corner
For example, a signal transmission input / output terminal on which a gold thin film is formed; and a ring resonance of a perturbation structure for controlling or filtering signal transmission energy between the input / output terminal on the single crystal substrate and the microstrip coupling line. And a circuit pattern of a high-temperature superconducting dual-mode five-pole bandpass filter in which two devices are integrated; and a ground plane metal thin film formed by, for example, vapor deposition under the single crystal substrate. Especially.

Here, controlling the transmission energy of a signal means, for example, adjusting the strength of the signal. Also, filtering the transmitted energy of a signal means
Passing only a specific frequency band.

Still another feature of the present invention is that the high temperature superconducting Y is formed on the MgO single crystal substrate by the pulse-laser deposition method.
A first step of growing a BCO / MgO thin film, forming a metal thin film for a pad by evaporating a metal such as gold, and then patterning the gold thin film by a normal photolithography method; After performing the photolithography process, a photoresist is coated on the high temperature superconducting thin film with a high speed spin coater, and a soft baking is performed. Second step; After performing the second step, positioning is performed by a contact aligner. And a third step of performing an exposure process using an ultraviolet light source to remove the exposed photoresist film; and after performing the third step, wet or dry etching, for example, EDTA (Ethylenedeaminetetraacetic Acid: ethylenediamine). Tetraacetic acid :) Wet etching or ECR (electron cyclotron resonance) ion milling (ion milli)
ng) a fourth step of forming the high-temperature superconducting thin film into a desired shape by dry etching and removing the photoresist film, and a metal pad for contacting with the connector pin after performing the fourth step, eg, A fifth step of cleaning the surface of the high-temperature superconducting dual-mode five-pole bandpass filter pattern and the contaminated substrate surface after forming the gold pad;
When the high temperature superconducting dual mode bandpass filter is completed by performing the steps, a double metal thin film composed of a Ti layer / Ag layer is formed by, for example, an electron beam evaporator to form a double metal thin film. And the sixth step of manufacturing the ground plane.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The gist of the present invention is to manufacture a microwave core element using a high temperature superconducting epitaxial thin film.

Since the superconductor has no electric resistance below the critical temperature and eliminates the external magnetic field, it does not disperse the transmission energy even in the super high frequency region of 100 GHz or more,
In addition, a large amount of information can be transmitted without distortion without loss due to attenuation.

Particularly, since the high temperature superconducting epitaxial thin film used in the present invention has a very small microwave surface resistance (about 1/20) as compared with the existing metal thin film, it can be used as a planar microwave transmitting element. Can achieve performance improvement and miniaturization,
Recently, performance can be improved with the help of device manufacturing processes and packaging technology which have been developed day by day.

FIG. 1 shows a high-temperature superconducting dual mode 5 integrating two perturbed annular dual mode resonators according to the present invention.
It is a top view of a pole band pass filter.

As shown in FIG. 1, a signal transmission input end 1a.
And the output end 1b are made of a high temperature superconducting microstrip wire having a resistance of about 50Ω and a glass bead (gl) of a K-type connector pin attached to the housing of the test jig.
ass bead). At this time, in order to reduce the contact resistance and the loss to the maximum, as shown in FIG. 1, the gold pad 2 is formed on the high temperature superconducting microstrip conductor by electron beam evaporation to a thickness of about 2 μm.

In the present invention, MgO is used as the substrate 5.
A single crystal (ε = 9.6) substrate is used. Where MgO
The single crystal substrate 5 is used because the MgO single crystal substrate is
This is because the microwave characteristics are excellent as compared with other types of thin film deposition substrates such as SrTiO ₃ and LaAlO ₃ . The line width of the input / output terminals 1a and 1b is 0.49 mm.
I have to.

On the other hand, the dual mode 5 which is the core of the present invention
The main part of the pole band pass filter is a conductor 3a that constitutes an annular dual mode resonator having a perturbation structure 7.
3b and the microstrip coupling line 4. Perturbation structure 7
The dual mode resonator will be described in detail later.
The dual mode resonator with the perturbation structure 7 forms a two-pole bandpass filter. Moreover, since the number of the microstrip coupling lines 4 is one, the total number of poles of the present invention is five. Center frequency of the dual-mode bandpass filter (ce
It is designed such that the inter frequency is fo = 10 GHz and the bandwidth is 500 MHz. The bonding line 4 may be implemented in various shapes, not limited to the shape of FIG. 1, for reducing the size of the device pattern and achieving good bonding.

The MgO substrate 5 used in the present invention is also excellent in microwave characteristics, and the high temperature superconducting YBa ₂ Cu ₃ O _7-d (referred to as YBCO in this specification) produced on the substrate. The electrical properties and surface properties of the epitaxial thin film are also very good. With this high temperature superconducting YBa ₂ Cu ₃ O _7-d epitaxial thin film, the input / output terminals 1a and 1b, the conductor 3
a, 3b and the connecting line 4 are formed.

For excellent electrical matching and contact with the inner bottom surface of the test jig, a ground plane Ti layer / Ag layer double thin film 6 is uniformly deposited by an electron beam evaporator. The Ti layer / Ag layer double thin film 6 has good adhesion to the MgO single crystal substrate 5. Also, this Ti layer / A
The g-layer double thin film 6 has excellent microwave characteristics and is inexpensive in vapor deposition as compared with a gold (Au) thin film that is generally used for microwave communication parts, and is therefore highly desirable as a ground plane. .

The manufacturing process of the annular high-temperature superconducting dual-mode five-pole bandpass filter having the X-band perturbation structure having the above-mentioned structure will be described below with reference to FIGS.

The process cross-sectional views of FIGS. 2 to 7 are for the purpose of completing an annular dual mode five-pole bandpass filter with a perturbation structure.
It shows from the step of forming a YBCO epitaxial thin film to the step of forming a ground plane on the back surface of the substrate after the surface treatment of the MgO substrate.

FIG. 2 shows a step of forming a high temperature superconducting YBa ₂ Cu ₃ O _7-d thin film by a pulse laser deposition method and forming a gold (Au) thin film for a pad after pretreatment of a substrate.
In this step, first, the MgO substrate 10 (substrate 5 in FIG. 1)
As a pre-treatment process for making the surface of the surface more flat, etching is mainly performed by ECR ion milling or an etching liquid (etch).
Ant) is used to perform surface etching in a short time. Then, the high temperature superconducting YBCO thin film 11 is formed by the pulse laser deposition method.
Is grown and the gold thin film 12 for pad is deposited, and then the gold thin film 12 is patterned by a normal photolithography method. As a result, the gold pad 2 of FIG. 1 is formed.

FIG. 3 shows a process of applying a photoresist film for performing a photolithography process of the thin film 11 of high temperature superconducting YBa ₂ Cu ₃ O _7-d . In this process, a photolithography process, which is the first step for manufacturing a high temperature superconducting microwave device, is performed. That is,
First, a photoresist (AZ-5214E) 13 is coated on the high temperature superconducting thin film 11 with a high speed spin coater, and soft baking (soft-bak) is performed.
ing).

FIG. 4 shows a step of removing the exposed photoresist film after exposure. In this step, as shown in FIG. 4, positioning is performed by a contact aligner, and an exposure step is performed by an ultraviolet source (UV-source (10 W)), and the exposed photoresist film is removed using a developing solution. Remove.

FIG. 5 shows a patterning process of a high temperature superconducting thin film by an etching process (EDTA (ethylenediaminetetraacetic acid) wet etching). As shown in FIG. 5, the high temperature superconducting thin film 11 is patterned by an etching process (wet etching by EDTA or dry etching by ECR ion milling), that is, a target shape (input / output ends 1a, 1b in FIG. 1, The conductors 3a, 3b and the connecting line 4 are formed).

FIG. 6 shows the steps of removing the unexposed photoresist film 13, exposing the gold pad 12, and cleaning the impurities with acetone. As shown in FIG. 6, the unexposed photoresist film is removed by acetone, and the gold pad 12 is exposed for excellent contact with the connector pins, and then unnecessary impurities are washed away.

FIG. 7 shows the deposition process of the ground plane on the backside of the substrate. When the high-temperature superconducting dual-mode multipole bandpass filter is completed by the steps of FIGS. 2 to 6, as shown in FIG. Then, a double thin film 14 of Ti layer / Ag layer is deposited. Here, on the back surface of the substrate 10, first, the first
As a layer, a Ti layer is formed to a thickness of, for example, 20 to 300 nm, and then, as a second layer, an Ag layer is formed to be, for example, a thickness of 1 to 2 μm.

The photolithography process of the high temperature superconducting thin film 11 will be described in more detail below.

Laboratory high speed spin coater (spin co
YBCO grown on the head (chuck)
/ MgO thin films 11 and 10 are placed, and HMDS (Hexame
Thldisilazan) is applied (5000 rpm, 30 seconds) to remove foreign substances and flatten the surface.

Then, a photoresist (PR: AZ-5) is used.
214E) is applied (5000 rpm, 30 seconds),
A uniform photoresist film 13 is overlaid on the high temperature superconducting YBCO thin film 11.

Then, after appropriately curing the photoresist film by a soft baking (80 ° C., 5 minutes) process,
The sample covered with the photoresist film is placed on a small contact aligner for a laboratory, and the sample and the electron beam mask are aligned, and then 1
It is exposed with a UV light source for 0 W for 5 minutes.

The exposed sample is treated with a developing solution for 3 minutes to remove the exposed photoresist film, and then the surface of the device is washed with distilled water.

Next, in order to pattern the circuit pattern by etching the YBCO thin film 11, in the case of wet etching, it is etched with EDTA (ethylenediaminetetraacetic acid) and the like (chemical etching), and dry etching is used. In some cases, etching is performed by ECR ion milling (physical etching).

When the etching is completed, the sharpness of the filter pattern is increased, and unnecessary (non-exposed) photoresist film or other foreign substances are removed to remove distilled water (D
I-water) and acetone, and then dried (ha
rd baking), and the manufacturing process of the high-temperature superconducting dual-mode 5-pole bandpass filter with a perturbation structure is completed.

On the other hand, on the opposite side of the embodied high-temperature superconducting dual-mode bandpass filter, that is, on the back surface of the substrate, an evaporator is used to form a vacuum chamber (10 ^-2 Torr, 500).
Ti layer / Ag layer double metal thin film 14 is continuously deposited at (° C.).

The Ti layer / Ag layer double metal thin film 14 is
Adhesion with the MgO substrate 10 is excellent, and thin film deposition is easy. In particular, silver (Ag) not only improves the characteristics of the high temperature superconducting YBCO epitaxial thin film, but also improves the characteristics of the YBCO thin film 11.
It has the advantage of being able to prevent contamination of other substances to the.
And, since the silver thin film is excellent not only in microwave characteristics but also in electrical conductivity, it contributes to excellent contact matching with the inner bottom surface of the test jig when measuring the microwave characteristics of the filter. Here, the Ti layer of the Ti layer / Ag layer double metal thin film 14 prevents the Ag layer from peeling off from the substrate 10 when used at a low temperature of Tc (89K) or less of YBCO. As a result, the microwave characteristics due to the Ag layer peeling off from the substrate and the grounding effect being lost can be prevented. Note that instead of the Ag layer, an Au layer, Cu
Although a layer and an Ag layer can be used, according to the experiments conducted by the inventors, the Ag layer is superior in adhesiveness.

After the above steps, the center frequency is 10G
A circular high-temperature superconducting dual-mode 5-pole bandpass filter with a perturbation structure having a frequency of Hz and a bandwidth of 500 MHz is completed.

That is, when a signal is input to the input end 1a of the dual mode 5-pole band pass filter of FIG. 1 via the gold pad 2, the center frequency of the input signal is 10 GHz.
A signal having z and a bandwidth of 500 MHz is output from the output end 1b.

The low temperature microwave characteristics of the completed dual mode band pass filter are excellent in high frequency characteristics K-
Type connector (2.9mmΦ, ~ 40GHz, Wiltr
on (US) product can be installed in a 3-component test jig attached to the housing for measurement.

The present invention relates to a bandpass filter which is a core element constituting core parts (multiplexer, mixer, etc.) used in mobile communication, satellite communication and satellite broadcasting, and a method for manufacturing the same. The band pass filter according to the present invention is a filter that allows a signal to pass in the pass band with almost no loss and to block signal transmission in the stop band on both sides of the pass band.

The present invention adopts a method of integrating two annular double-mode resonators having a perturbation structure. Here, a double-mode resonator having a perturbation structure will be described. The perturbation structure in the present invention means a structure in which a normal state such as a perfect ring shape or a disk shape is added with a slight abnormal state such as a notch (perturbation structure 7 in FIG. 1) as a stimulus. Refers to the relative concept of. That is, as shown in FIG. 1, when two double-mode resonators are coupled to form a 5-pole bandpass filter, a groove-shaped notch with a rectangular shape is formed in the conductors 3a and 3b of a general ring resonator. By adding, a unique and excellent resonance characteristic was obtained,
In the present invention, this is called a perturbation structure.

Generally, a single-mode disc type or ring type resonator has only one resonance peak at a desired specific frequency. However, by adding a slight perturbation structure 7 to this disk-shaped or ring-shaped resonator and changing the shape so that the input and output end directions are orthogonal, a dual mode (dual mode) that is not a single mode as in FIG. mode) peak occurs. That is, sharp resonance peaks occur above and below the specific frequency. For example, when the specific frequency f ₀ is 5 GHz, a sharp resonance peak occurs such that the upper resonance peak is 5.1 GHz and the lower resonance peak is 4.9 GHz. In FIG. 16, S ₁₁ and S ₂₁ are added to the first peak.
There are two resonance peaks.

The two-mode five-pole bandpass filter of the perturbation structure of the present invention was developed by combining two resonators having such a dual-mode resonance phenomenon.

The perturbation structure 7 is shown in FIG. 1, FIG. 8, FIG.
0, FIG. 11, FIG. 12, FIG. 15, and FIG. 17, the disk-type or ring-type resonator may be formed into a groove-shaped notch, or as illustrated in FIG. 13 and FIG. The shape may also be such that it projects from a ring-shaped or ring-shaped resonator. The position of this perturbation structure 7 determines whether a dual mode is obtained or not. It is very important that the position of the perturbation structure 7 is 45 ° or 135 ° from the direction of the input / output end. Can be demonstrated well.

In particular, as in the present invention, the size of the microwave element can be reduced by using the microstrip resonator or the filter using the high temperature superconducting thin film, and at the same time, the performance is improved. be able to.

Therefore, the high temperature superconducting dual mode 5 of the present invention
The shape of the resonator of the pole band pass filter is not limited to a ring shape, and may be, for example, a disk shape.
Further, since the perturbation structure 7 may be not only a notch but also a protruding type, various forms are possible as shown in FIGS. 8 to 15 and 17, and the microstrip coupling line 4 is not limited to the form shown in FIG. As shown in FIG. 8, FIG. 10, and FIG. 17, it can take various forms.

On the other hand, the microwave circuit interpretation theory is also applied when designing the dual mode bandpass filter, and in practice, the induction constant (ε = 9.6) of the substrate 10 (mainly MgO) used. ) And thickness (0.5 mmt), a high temperature superconducting YBCO epitaxial thin film 1 grown on a substrate 1.
In consideration of the thickness (450 nm) of 1 and the microwave physical properties, and the frequency / power characteristics of the bandpass filter, the line widths and lengths of the input / output terminals (transmission lines) 1a and 1b and the microstrip coupling line 4, and the perturbation structure The gap between the annular conductor and the microstrip coupling line will be determined.

In order to obtain the flatness of the pass band or the skirt characteristic up to the stop band to a desired degree, the number, diameter, size of the perturbation structure, etc. of the annular double mode resonator of the perturbation structure must be taken into consideration. .

Then, the optimum circuit pattern of the high-temperature superconducting annular dual mode 5-pole bandpass filter was obtained by simulation (computer simulation) several times. The theoretical microwave transmission (frequency) response characteristic of such a pattern is further considered.

As a result, the mask (glass m) to which the optimally designed dual-mode bandpass pattern has been transferred.
ask, a circuit board) can be manufactured.

In order to manufacture an excellent high-temperature superconducting microstrip transmission device for micros, a high-quality epitaxial thin film is required. Therefore, in the present invention, the thin film can be manufactured easily and its excellence is proved. Pulsed laser deposition equipment, eg XeCl with wavelength of 308 nm
High temperature superconducting YBCO / Mg using excimer laser
An O epitaxial film is deposited.

Then, a MgO substrate (15 mm × 15 mm × 0.5 mm) whose surface is well polished so that a high-quality high-temperature superconducting YBCO epitaxial thin film can be manufactured.
Use t).

High temperature superconducting YBCO / produced by the present invention
The critical temperature (Tc) of the MgO thin film is 89K, and various analytical equipments (XRD, T
EM, AFM, etc.).

After preparing a grown good quality YBCO / MgO thin film and a mask (circuit original plate) on which an optimally designed filter pattern is transferred, a photolithography process and an etching process (EDTA wet etching or ECR ion milling) are performed. , Microwave perturbation structure (annular or disc-shaped)
The high-temperature superconducting dual-mode 5-pole bandpass filter of

The dual-mode five-pole bandpass filter of the high-temperature superconducting perturbation structure for microwaves embodied by the manufacturing method of the present invention is a microstrip type microwave element using a high-quality high-temperature superconducting thin film. It is easy to manufacture and has excellent performance and reliability (reproducibility) because it uses the lossless and resistanceless characteristics of high temperature superconductors.

Furthermore, the previously developed parallel-coupling wire type high-temperature superconducting multipole (conventional 4-pole and 6-pole) bandpass filter and the perturbation-structured dual-mode 5-pole bandpass filter of the present embodiment. When compared with a configuration having the same center frequency, bandwidth, number of stations, and characteristic impedance, the size of the circuit pattern of the present embodiment was small, and the results of circuit interpretation were in good agreement. Therefore, the size of the perturbation-structured dual-mode five-pole bandpass filter of this embodiment can be reduced as compared with the conventional one.

Particularly, the slope (skirt characteristic) on both sides of the band (pass band) is improved, the insertion loss in the pass band is small to a similar degree (1.0 dB or less), and the ripple current (rippl).
The amplitude of e) is also very small and has a flat characteristic.

The dual-mode five-pole bandpass filter of the perturbation structure of this embodiment has the line widths 1a and 1a at the input and output ends.
By changing parameters such as the line width of b and the line width and diameter of the perturbed annular or discoidal dual mode resonators 3a and 3b, the output from the output end 1b for the signal input from the input end 1a is output. It is possible to adjust the intensity ratio of the signals to be read. That is, the characteristic impedance of the perturbation-structured dual-mode five-pole bandpass filter can be adjusted. Therefore, by designing the above parameters so that the characteristic impedance has an arbitrary value, the dual-mode five-pole bandpass filter of the present embodiment is used to
It is also possible to control the energy intensity output from the output end.

As described above, according to the present invention,
It is possible to expect miniaturization of the subsystem (component) of the microwave communication system related to the advanced use technology of radio waves, and it is possible to obtain the effect of improving the performance of the information communication system or the microwave component.

Since the high-temperature superconducting epi-thin film is used, it is possible to manufacture a communication component having a small size, lightness, shortness, and high performance. Therefore, next-generation mobile communication and satellite communication (satellite broadcasting, ~ 12
It is possible to obtain a great effect in the creation of microwave elements and circuits (HTS-MMICs) having a new structure and a new structure that can be used for (GHz and below), and can actively respond to the rapidly increasing demand for high-quality radio service. Development of an excellent microwave communication system can also be expected.

[0068]

As described above, according to the present invention,
A high-temperature superconducting dual-mode 5-pole bandpass filter with a perturbation structure, which is simple in manufacturing method and can be miniaturized and has high performance, using a high-temperature superconducting epitaxial thin film having excellent microwave characteristics, and a method for manufacturing the same. Can be provided.

[Brief description of the drawings]

FIG. 1 is a plan view of an annular high-temperature superconducting dual-mode five-pole bandpass filter having a perturbation structure according to the present invention.

FIG. 2 is a view showing a process of manufacturing a bandpass filter according to the present invention, in which a high temperature superconducting YBa ₂ Cu ₃ O _{7 -d} thin film is deposited by pulse-laser deposition and gold for pad (A) after pretreatment of a substrate.
u) Process sectional views showing a step of forming a thin film.

FIG. 3 is a process cross-sectional view showing a process of applying a photoresist film for performing a photolithography process in the process of manufacturing the bandpass filter of the present invention.

FIG. 4 is a process cross-sectional view showing a step of removing the exposed photoresist film after exposure in the step of manufacturing the bandpass filter of the present invention.

FIG. 5 is a process cross-sectional view showing a patterning process of a high temperature superconducting thin film by an etching process (EDTA-wet etching) in the process of manufacturing the bandpass filter of the present invention.

FIG. 6 is a process cross-sectional view showing a process of removing a photoresist film which has not been exposed to light, formation of a gold pad, and cleaning of impurities by acetone in the process of manufacturing the bandpass filter of the present invention.

FIG. 7 is a process cross-sectional view showing a vapor deposition process of a ground plane on the back surface of the substrate in the manufacturing process of the bandpass filter of the present invention.

FIG. 8 is a plan view showing another example of the bandpass filter according to the present invention.

FIG. 9 is a plan view showing another example of the bandpass filter according to the present invention.

FIG. 10 is a plan view showing another example of the bandpass filter according to the present invention.

FIG. 11 is a plan view showing another example of the bandpass filter according to the present invention.

FIG. 12 is a plan view showing another example of the bandpass filter according to the present invention.

FIG. 13 is a plan view showing another example of the bandpass filter according to the present invention.

FIG. 14 is a plan view showing another example of the bandpass filter according to the present invention.

FIG. 15 is a plan view showing another example of the bandpass filter according to the present invention.

FIG. 16 is a graph showing that the resonance peak becomes a dual mode by adding the perturbation structure 7 to the disk-shaped resonator.

FIG. 17 is a plan view showing another example of the bandpass filter according to the present invention.

[Explanation of symbols]

 1a Input end 1b Output end 2 Gold pad 3a, 3b Conductor 4 Coupling wire 5 MgO substrate 6 Ti layer / Ag layer Double thin film 7 Perturbation structure 10 MgO substrate 11 YBCO thin film 12 Gold thin film 13 Photoresist film 14 Ti layer / Ag layer Double thin film

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical display location H01P 11/00 ZAA H01P 11/00 ZAAG (72) Inventor Jeha Kim South Korea, Daejeong, Yusungk, Jun Min Dong 464-1, Expo Apartment 101-603

Claims (10)

[Claims] 1. An MgO single crystal substrate having microwave characteristics; a signal transmission input / output end formed on a corner of the single crystal substrate and having a pad metal thin film formed thereon; A high-temperature superconducting dual-mode 5-pole bandpass filter having two ring resonators of a perturbation structure integrated for controlling or filtering signal transmission energy between the input / output terminal and the microstrip coupling line. A high-temperature superconducting dual-mode five-pole bandpass filter having a perturbation structure for microwaves, characterized in that it comprises a circuit pattern and a ground plane metal thin film formed below the single crystal substrate. 2. The center frequency of the dual-mode bandpass filter according to the predetermined circuit pattern is 3 to 33 GH.
The high-temperature superconducting dual-mode five-pole bandpass filter with a perturbation structure for microwaves according to claim 1, wherein z is z. 3. The single crystal substrate is 15 mm × 15 mm
The high-temperature superconducting dual-mode five-pole bandpass filter according to claim 1, wherein the substrate is a MgO single crystal substrate having a size of × 0.5 mmt. 4. The high-temperature superconducting circuit pattern is made of YBa.
The high-temperature superconducting dual-mode five-pole bandpass filter according to claim 1, wherein the high-temperature superconducting dual-mode bandpass filter is constituted by ₂ Cu ₃ O _7-d . 5. The ground plane type metal thin film has a Ti layer / A having adhesiveness with the substrate and electrical conductivity.
The high-temperature superconducting dual-mode five-pole bandpass filter with a perturbation structure for microwaves according to claim 1, wherein a double metal thin film composed of g layers is used. 6. A first step of growing a high temperature superconducting thin film on a MgO single crystal substrate by a pulse laser deposition method to form a metal thin film for a pad, and then patterning the metal thin film by a photolithography method; After performing the first step, as a photolithography process, a photoresist is coated on the high-temperature superconducting thin film by a high speed spin coater, and a soft baking is performed; and a contact alignment is performed after performing the second step. And exposing the photoresist film by using an ultraviolet source to position the wafer, and removing the exposed photoresist film; and, after performing the third step,
A fourth step of forming the high temperature superconducting thin film into a desired shape by wet etching or dry etching and removing a photoresist film; and, after performing the fourth step, forming a metal pad for contacting the connector pin. And a fifth step of cleaning the surface of the high-temperature superconducting dual-mode five-pole bandpass filter pattern and the contaminated substrate surface; and performing the fifth step to form a high-temperature superconducting dual-mode bandpass filter. And then performing a sixth step of forming a metal thin film to form a ground plane on the back surface of the substrate, and manufacturing the high-temperature superconducting dual-mode five-pole bandpass filter of the perturbation structure for microwaves. Method. 7. The center frequency of the dual-mode bandpass filter according to the predetermined circuit pattern is 3 to 33 GH.
7. The method for manufacturing a high-temperature superconducting dual-mode five-pole bandpass filter having a perturbation structure for microwaves according to claim 6, wherein z is z. 8. The single crystal substrate is 15 mm × 15 mm
The method for manufacturing a high-temperature superconducting dual-mode five-pole bandpass filter according to claim 6, wherein the substrate is a MgO single crystal substrate having a size of × 0.5 mmt. 9. The high temperature superconductor is YBa ₂ Cu ₃ O.
_{7. The} method for manufacturing a high-temperature superconducting dual-mode five-pole bandpass filter with a perturbation structure for microwaves according to claim 6, which is _7-d . 10. The ground plane type metal thin film has a Ti layer / adhesiveness with the substrate and an electrical conductivity.
The method of manufacturing a high-temperature superconducting dual-mode five-pole bandpass filter with a perturbation structure for microwaves according to claim 6, wherein a double metal thin film composed of an Ag layer is used.