JPH0919782A - Substrate processing method and processing apparatus thereof - Google Patents
Substrate processing method and processing apparatus thereofInfo
- Publication number
- JPH0919782A JPH0919782A JP7168914A JP16891495A JPH0919782A JP H0919782 A JPH0919782 A JP H0919782A JP 7168914 A JP7168914 A JP 7168914A JP 16891495 A JP16891495 A JP 16891495A JP H0919782 A JPH0919782 A JP H0919782A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- carbon dioxide
- laser light
- moving device
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 155
- 238000003672 processing method Methods 0.000 title claims abstract description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 94
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 47
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 47
- 238000005520 cutting process Methods 0.000 claims abstract description 25
- 238000003825 pressing Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 239000011521 glass Substances 0.000 description 15
- 239000002585 base Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 238000012356 Product development Methods 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
(57)【要約】
【課題】 基板の割断或いは切断等の加工において、割
断切断面或いは割断面を平滑にすると共にマイクロクラ
ックの発生を防止する。
【解決手段】 炭酸ガスレーザ光の伝搬方向に沿ってア
シストガスGを流しながら、基板移動装置100上に載
置された加工用の基板20上に炭酸ガスレーザ光を照射
しつつ、基板20を炭酸ガスレーザ光の伝搬方向と直交
する方向に移動させ、基板20の一端から他端までを切
断加工或いは割断加工する基板の加工方法において、基
板移動装置100に設けられた押えアーム28−1、2
8−2で基板20の炭酸ガスレーザ光の照射面の近傍を
押えるようにする。
(57) Abstract: In processing such as cleaving or cutting of a substrate, a cleaved cut surface or a cleaved surface is made smooth and generation of microcracks is prevented. A carbon dioxide gas laser beam is applied to a substrate 20 while irradiating a carbon dioxide gas laser beam onto a processing substrate 20 mounted on a substrate moving device 100 while flowing an assist gas G along a propagation direction of the carbon dioxide gas laser beam. In the substrate processing method of moving in a direction orthogonal to the light propagation direction and cutting or cleaving from one end to the other end of the substrate 20, the holding arms 28-1 and 28-2 provided in the substrate moving device 100.
In 8-2, the vicinity of the carbon dioxide laser light irradiation surface of the substrate 20 is pressed down.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、炭酸ガスレーザ光
の伝搬方向に沿ってアシストガスを流しながら基板に炭
酸ガスレーザ光を照射しつつ、基板を移動させて基板を
加工する基板の加工方法及びその加工装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing method for moving a substrate while irradiating the substrate with carbon dioxide laser light while flowing an assist gas along the direction of propagation of carbon dioxide laser light, and a method of processing the substrate. Regarding processing equipment.
【0002】[0002]
【従来の技術】近年、ガラス材料、磁性材料、半導体材
料及び誘電体材料等の非金属材料の基板上や基板中に、
集積回路、光回路を実装した光集積回路或いは電気回路
と光回路とを一体化した電気/光集積回路の製品開発が
活発化してきた。2. Description of the Related Art In recent years, on and in substrates of non-metal materials such as glass materials, magnetic materials, semiconductor materials and dielectric materials,
Product development of integrated circuits, optical integrated circuits having optical circuits mounted therein, or electric / optical integrated circuits in which electric circuits and optical circuits are integrated has become active.
【0003】この種の集積回路は、サイズが3インチか
ら10数インチの円形或いは四角形の基板に数十から数
万個の範囲で高密度に集積化される。例えば図4に示す
ように基板701を切断してそれぞれn×m個の集積回
路702のチップに分離される。基板701の切断、分
離方法としては基板701を一点鎖線703a〜703
n、704a〜704mに沿ってダイヤモンドブレード
ダイシングを行うか、又はレーザ光を照射することによ
りスクライビングがある。This type of integrated circuit is densely integrated in a range of several tens to several tens of thousands on a circular or square substrate having a size of 3 inches to 10 and several inches. For example, as shown in FIG. 4, the substrate 701 is cut and separated into n × m integrated circuit 702 chips. As a method of cutting and separating the substrate 701, the substrate 701 is defined by alternate long and short dash lines 703a to 703.
There is scribing by performing diamond blade dicing along the n, 704a to 704m or irradiating with laser light.
【0004】図5は本発明者が先に提案した炭酸ガスレ
ーザ光の照射によるガラス切断装置の構成図である(特
願平6−247436号)。FIG. 5 is a block diagram of a glass cutting device by irradiation of carbon dioxide gas laser light previously proposed by the present inventor (Japanese Patent Application No. 6-247436).
【0005】これは炭酸ガス(CO2 )レーザ801か
ら出射した後集光レンズLeで集光されたレーザ光Lの
回りに、アシストガス導入管802を通してアシストガ
スGを吹き付けつつ、ベース803上に真空吸着で固定
されたガラス基板804に照射してA、B2つに切断加
工するものである。尚805は貫通口であり、レーザ光
Lがガラス基板804を貫通するようにしたもので、貫
通口805があることにより、切断中に同じ切断条件を
保つことができる。[0005] This is on the base 803 while blowing the assist gas G through the assist gas introduction pipe 802 around the laser light L which is emitted from the carbon dioxide gas (CO 2 ) laser 801 and then condensed by the condenser lens Le. The glass substrate 804 fixed by vacuum suction is irradiated and cut into two pieces A and B. Reference numeral 805 denotes a through-hole, which allows the laser light L to penetrate through the glass substrate 804. The presence of the through-hole 805 makes it possible to maintain the same cutting conditions during cutting.
【0006】[0006]
【発明が解決しようとする課題】ところで、図5に示し
た装置を用いて、セラミックス基板やガラス基板を蒸発
切断或いは割断を行うと、次のような問題点が生じるこ
とが分かった。By the way, it has been found that the following problems occur when the ceramic substrate or the glass substrate is vapor-cut or cleaved by using the apparatus shown in FIG.
【0007】(1) ガラス基板804をベース803上に
真空吸着して固定していてもアシストガスGのガス圧が
2Kg/cm2 以上になると、ガラス基板804がベー
ス803上から浮き上がって振動し、不均一な蒸発切断
或いは割断になることが分かった。すなわち、ガラス基
板804が浮上すると、レンズLeとガラス基板804
との間の距離が変わることになる。そのためガラス基板
804上に照射される炭酸ガスレーザ光のエネルギー密
度が変化し、結果的に切断面或いは割断面に不均一な凹
凸やマイクロクラックを発生させることが分かった。(1) Even if the glass substrate 804 is vacuum-adsorbed and fixed on the base 803, when the gas pressure of the assist gas G exceeds 2 Kg / cm 2 , the glass substrate 804 floats above the base 803 and vibrates. It was found that non-uniform evaporation cutting or cleaving occurred. That is, when the glass substrate 804 floats, the lens Le and the glass substrate 804
The distance between and will change. Therefore, it was found that the energy density of the carbon dioxide laser light with which the glass substrate 804 was irradiated was changed, resulting in uneven unevenness and microcracks on the cut surface or the fractured surface.
【0008】(2) ガラス基板804の浮上或いは振動に
より、ガラス基板804を直線性良く切断或いは割断す
ることが困難であった。(2) Due to the floating or vibration of the glass substrate 804, it is difficult to cut or cut the glass substrate 804 with good linearity.
【0009】[0009]
【課題を解決するための手段】本発明は、炭酸ガスレー
ザ光の伝搬方向に沿ってアシストガスを流しながら、基
板移動装置上に載置された加工用の基板上に炭酸ガスレ
ーザ光を照射しつつ、基板を炭酸ガスレーザ光の伝搬方
向と直交する方向に移動させ、基板の一端から他端まで
を切断加工或いは割断加工する基板の加工方法におい
て、基板移動装置に設けられた押えアームで基板の炭酸
ガスレーザ光の照射面の近傍を押えるようにしたもので
ある。According to the present invention, while supplying an assist gas along the propagation direction of a carbon dioxide laser beam, a carbon dioxide laser beam is irradiated onto a processing substrate placed on a substrate moving device. In a method of processing a substrate in which the substrate is moved in a direction orthogonal to the propagation direction of the carbon dioxide gas laser light and the one end to the other end of the substrate is cut or cleaved, the carbon dioxide of the substrate is cut by a holding arm provided in the substrate moving device. The gas laser light irradiation surface is pressed in the vicinity thereof.
【0010】上記構成に加え本発明は、押えアームが基
板の少なくとも2か所を押えるようにしてもよい。In addition to the above structure, in the present invention, the holding arm may hold at least two positions of the substrate.
【0011】上記構成に加え本発明は、基板の炭酸ガス
レーザ光の照射面の真裏以外の裏面を真空吸着で基板移
動装置上に固定してもよい。In addition to the above structure, in the present invention, the back surface other than the back surface of the surface of the substrate irradiated with the carbon dioxide laser light may be fixed on the substrate moving device by vacuum suction.
【0012】本発明は、炭酸ガスレーザ装置と、炭酸ガ
スレーザ装置から出射した炭酸ガスレーザ光を集光する
集光系と、炭酸ガスレーザ光の伝搬方向に沿ってアシス
トガスを流すガス導入系と、基板を炭酸ガスレーザ光の
伝搬方向と直交する方向に移動させる基板移動装置と、
基板移動装置上に設けられ基板の炭酸ガスレーザ光の照
射面の近傍を押えアームで押える固定機構とを備えたも
のである。According to the present invention, a carbon dioxide gas laser device, a condenser system for condensing carbon dioxide gas laser light emitted from the carbon dioxide gas laser device, a gas introduction system for flowing an assist gas along the propagation direction of the carbon dioxide gas laser light, and a substrate are provided. A substrate moving device that moves in a direction orthogonal to the propagation direction of carbon dioxide laser light,
The fixing mechanism is provided on the substrate moving device and holds the vicinity of the carbon dioxide laser light irradiation surface of the substrate with a holding arm.
【0013】上記構成に加え本発明は、基板の炭酸ガス
レーザ光の照射面の真裏以外の裏面を真空吸着で基板移
動装置上に固定する真空吸引装置を基板移動装置に設け
てもよい。In addition to the above structure, in the present invention, the substrate moving device may be provided with a vacuum suction device for fixing the back surface of the substrate other than the back surface of the surface irradiated with the carbon dioxide laser light onto the substrate moving device by vacuum suction.
【0014】上記構成によれば、加工用の基板を基板移
動装置上に押えアームで押えるので、炭酸ガスレーザ光
の伝搬方向に沿ってアシストガスを流してもガス圧で基
板が浮上したり振動したりすることがなくなる。このた
め、基板に照射される炭酸ガスレーザ光のエネルギー密
度が一定になり、切断面或いは割断面が均一になる。According to the above construction, since the substrate for processing is held on the substrate moving device by the holding arm, the substrate floats or vibrates due to the gas pressure even when the assist gas is made to flow along the propagation direction of the carbon dioxide laser light. It will not happen. Therefore, the energy density of the carbon dioxide laser light with which the substrate is irradiated becomes constant, and the cut surface or the split surface becomes uniform.
【0015】押えアームで基板の少なくとも2か所を押
えることにより、基板が回転するのが防止され、基板に
照射される炭酸ガスレーザ光のエネルギー密度を一定に
なり、切断面或いは割断面が均一になる。By pressing at least two positions of the substrate with the pressing arm, the substrate is prevented from rotating, the energy density of the carbon dioxide laser light with which the substrate is irradiated becomes constant, and the cut surface or the split surface becomes uniform. Become.
【0016】基板の炭酸ガスレーザ光の照射面の真裏以
外の裏面を真空吸着で基板移動装置上に固定することに
より、基板が基板移動装置により強く押え付けられるの
で、浮上や振動がより一層防止され、基板に照射される
炭酸ガスレーザ光のエネルギー密度が一定になり、切断
面或いは割断面が均一になる。By fixing the back surface of the substrate other than the surface directly irradiated with the carbon dioxide laser light onto the substrate moving device by vacuum suction, the substrate is strongly pressed by the substrate moving device, so that the floating and vibration are further prevented. The energy density of the carbon dioxide laser light with which the substrate is irradiated becomes constant, and the cut surface or split surface becomes uniform.
【0017】[0017]
【発明の実施の形態】本発明を非金属材料からなる基板
の加工に適用した場合は、加工用の基板を基板移動装置
上に押えアームで押えるので、炭酸ガスレーザ光の伝搬
方向に沿ってアシストガスを流してもガス圧で基板が浮
上したり振動しない。このため、基板に照射される炭酸
ガスレーザ光のエネルギー密度が一定になり、切断面或
いは割断面が均一になる。押えアームで基板の少なくと
も2か所を押えることにより、基板の回転が防止され
る。基板の炭酸ガスレーザ光の照射面の真裏以外の裏面
を真空吸着で基板移動装置上に固定することにより、基
板が基板移動装置により強く押え付けられるので、浮上
や振動がより一層防止される。BEST MODE FOR CARRYING OUT THE INVENTION When the present invention is applied to the processing of a substrate made of a non-metal material, the substrate for processing is held by the holding arm on the substrate moving device, so that an assist is provided along the propagation direction of the carbon dioxide laser light. The substrate does not float or vibrate due to the gas pressure even when the gas is flowed. Therefore, the energy density of the carbon dioxide laser light with which the substrate is irradiated becomes constant, and the cut surface or the split surface becomes uniform. The rotation of the substrate is prevented by pressing at least two places on the substrate with the pressing arm. By fixing the back surface of the substrate other than the surface directly irradiated with the carbon dioxide laser light onto the substrate moving device by vacuum suction, the substrate is strongly pressed by the substrate moving device, so that the floating and the vibration are further prevented.
【0018】基板としては、セラミック、無アルカリガ
ラス、ムライト等を用いる。アシストガスとしては、N
2 、O2 、Ar、空気或いはこれらの混合ガスを用い
る。押えアームとしては、フッ素樹脂系の材料が好まし
い。As the substrate, ceramic, non-alkali glass, mullite or the like is used. As the assist gas, N
2 , O 2 , Ar, air or a mixed gas thereof is used. As the holding arm, a fluororesin-based material is preferable.
【0019】[0019]
【実施例】まず本発明の基板の加工方法を説明する前
に、非金属材料からなる基板(以下「基板」という。)
をどのように切断(或いは割断)するかを図2及び図3
を用いて説明する。EXAMPLES Before explaining the substrate processing method of the present invention, a substrate made of a non-metal material (hereinafter referred to as "substrate").
Fig. 2 and Fig. 3 show how to cut (or cleave)
This will be described with reference to FIG.
【0020】図2(a)は加工前の基板の平面図、図2
(b)は加工後の基板の平面図、図3(a)及び図3
(b)は本発明の基板の加工方法の原理を説明するため
の説明図をそれぞれ示す。FIG. 2A is a plan view of the substrate before processing, and FIG.
3B is a plan view of the processed substrate, FIG. 3A and FIG.
(B) is an explanatory view for explaining the principle of the substrate processing method of the present invention.
【0021】図2(a)に示す基板1を、破線2〜7に
沿って切断加工し、図2(b)に示すように16個の基
板1−1〜1−16に分離する。The substrate 1 shown in FIG. 2 (a) is cut along the broken lines 2 to 7 to be separated into 16 substrates 1-1 to 1-16 as shown in FIG. 2 (b).
【0022】基板を切断加工によって複数に分離する方
法として、図3に示すような方法を用いる。A method as shown in FIG. 3 is used as a method of separating the substrate into a plurality of pieces by cutting.
【0023】図3(a)に示すように、基板1を破線2
a〜4aに沿って切断加工する場合には、押えアーム8
−1、8−2を破線2aの両側にそれぞれ配置し、基板
1の表面から圧力を加えて固定し、かつ基板1の各側面
1a〜1dを移動防止部品(図示せず)で固定し、炭酸
ガスレーザ光のビーム(以下「レーザビーム」とい
う。)及びアシストガスをZ方向(紙面に垂直な方向)
に照射すると共に、レーザビームが破線2に沿って移動
するように基板1をY方向に移動させて切断加工する。As shown in FIG. 3 (a), the substrate 1 is connected to the broken line 2
When cutting along a to 4a, the holding arm 8
-1, 8-2 are arranged on both sides of the broken line 2a, respectively, are fixed by applying pressure from the surface of the substrate 1, and the side faces 1a to 1d of the substrate 1 are fixed by movement preventing parts (not shown), A carbon dioxide laser beam (hereinafter referred to as a "laser beam") and an assist gas in the Z direction (direction perpendicular to the paper surface)
And the substrate 1 is moved in the Y direction so that the laser beam moves along the broken line 2, and the laser beam is cut.
【0024】基板1を破線2aに沿って切断加工した
ら、押えアーム8−1、8−2を移動させ、破線2aに
隣り合う次の破線3aの両側(一点鎖線で示す位置L
1、L2)にそれぞれ配置し、基板1の表面から圧力を
加えて固定し、レーザビームを紙面に垂直な方向に照射
すると共に、レーザビームが破線3aに沿って移動する
ように基板1をY方向に移動して切断加工する。After cutting the substrate 1 along the broken line 2a, the holding arms 8-1 and 8-2 are moved so that both sides of the next broken line 3a adjacent to the broken line 2a (position L indicated by a chain line).
1, L2) respectively, and apply pressure from the surface of the substrate 1 to fix it, and irradiate the laser beam in a direction perpendicular to the paper surface, and at the same time, move the substrate 1 Y along the broken line 3a. Move in the direction and cut.
【0025】基板1の切断加工が終了したら同様に押え
アーム8−1、8−2を破線4aの両側(一点鎖線で示
す位置L3、L4)に移動し、切断加工する。When the cutting of the substrate 1 is completed, the pressing arms 8-1 and 8-2 are similarly moved to both sides of the broken line 4a (positions L3 and L4 indicated by the one-dot chain line) to perform the cutting.
【0026】引き続いて図3(b)に示すように、各切
断線2b〜4bと直交する破線9a〜11aに沿って切
断加工する場合には、新たな押えアーム12−1、12
−2を破線9aの両側に配置し、基板1の表面から圧力
を加えて固定し、レーザビームをZ方向に照射すると共
に、レーザビームが破線9aに沿って移動するように基
板1をX方向に移動して切断加工する。Subsequently, as shown in FIG. 3B, when cutting is performed along broken lines 9a to 11a orthogonal to the cutting lines 2b to 4b, new holding arms 12-1 and 12 are provided.
-2 is arranged on both sides of the broken line 9a, pressure is applied from the surface of the substrate 1 to fix it, the laser beam is irradiated in the Z direction, and the substrate 1 is moved in the X direction so that the laser beam moves along the broken line 9a. Move to and cut.
【0027】破線9aに沿った切断加工が終了したら押
えアーム12−1、12−2を破線10a、11aの両
側(一点鎖線L5、L6、L7、L8)に移動し、切断
加工する。When the cutting work along the broken line 9a is completed, the pressing arms 12-1 and 12-2 are moved to both sides of the broken lines 10a and 11a (dashed lines L5, L6, L7, L8) to carry out the cutting work.
【0028】以上においてレーザビームが照射される基
板1の照射面の近傍を、押えアーム8−1、8−2、1
2−1、12−2で押えることにより、アシストガスの
圧力で基板1が浮上したり、振動したりすることがな
く、基板1を切断するの前の固定状態と略同じ状態を保
ちつつ、すべての切断加工を行うことができる。また、
切断或いは割断線の両側の基板表面を面的に広い範囲に
わたって圧力を加えて押えるので、ガス圧による基板の
浮上や振動のおそれはない。In the above, the holding arms 8-1, 8-2, 1 are provided near the irradiation surface of the substrate 1 irradiated with the laser beam.
By pressing with 2-1 and 12-2, the substrate 1 does not float or vibrate due to the pressure of the assist gas, and while maintaining the substantially same state as the fixed state before cutting the substrate 1, All cutting processes can be performed. Also,
Since the surface of the substrate on both sides of the cutting or severing line is planarly pressed by a wide range, there is no fear of floating or vibration of the substrate due to gas pressure.
【0029】以下、本発明の一実施例を添付図面に基づ
いて詳述する。An embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
【0030】図1は本発明の基板の加工方法を適用した
加工装置の一実施例を示す図である。FIG. 1 is a diagram showing an embodiment of a processing apparatus to which the substrate processing method of the present invention is applied.
【0031】同図に示すように、基板20が基板固定台
21上に載置されている。基板固定台21には複数(図
では6個であるが限定されない)の真空吸引穴22が形
成されており、これらの真空吸引穴22はチューブ23
を介して真空吸引装置24に接続されている。基板20
は真空吸引装置24によって基板固定台21に密着固定
されるようになっている。As shown in the figure, the substrate 20 is placed on the substrate fixing base 21. A plurality of (six in the figure, but not limited to) vacuum suction holes 22 are formed in the substrate fixing base 21, and these vacuum suction holes 22 are tubes 23.
Is connected to the vacuum suction device 24 via. Substrate 20
Is closely attached to the substrate fixing base 21 by a vacuum suction device 24.
【0032】基板固定台21は、XY移動装置25上に
固定されており、XY移動装置25のモータ駆動でX方
向或いはY方向に移動できるようになっている。基板2
0はその側面に設けられた移動式マグネットチャック2
6−1、26−2で固定される。The substrate fixing table 21 is fixed on the XY moving device 25, and can be moved in the X direction or the Y direction by driving the motor of the XY moving device 25. Substrate 2
0 is a movable magnet chuck 2 provided on the side surface
It is fixed at 6-1 and 26-2.
【0033】移動式マグネットチャック26−1、26
−2は、ダイヤル27−1、27−2を一方の方向(例
えば右方向)に回動することにより内蔵した磁石を基板
固定台21に吸着させて固定することができる。したが
って、基板20をマグネットチャックで基板固定台21
上に固定した後はX及びY方向にずれることはない
(尚、ダイヤル27−1、27−2を他方の方向(左方
向)に回動することにより固定を解除することができ
る)。両移動式マグネットチャック26−1、26−2
には、断面がへの字形状の板状の押えアーム28−1、
28−2が設けられている。Movable magnet chucks 26-1, 26
-2 can fix the built-in magnet by attracting the built-in magnet to the board fixing base 21 by rotating the dials 27-1 and 27-2 in one direction (for example, rightward direction). Therefore, the substrate 20 is fixed to the substrate fixing table 21 by the magnet chuck.
After being fixed to the upper side, it does not shift in the X and Y directions (the fixing can be released by rotating the dials 27-1 and 27-2 in the other direction (left direction)). Both moving magnet chucks 26-1, 26-2
Is a plate-shaped holding arm 28-1, which has a V-shaped cross section,
28-2 is provided.
【0034】これら基板固定台21、XY移動装置25
及び移動式マグネットチャック26−1、26−2で基
板移動装置100が構成されている。These substrate fixing base 21 and XY moving device 25
The movable magnet chucks 26-1 and 26-2 constitute the substrate moving device 100.
【0035】固定機構としての押えアーム28−1、2
8−2には、基板20の表面上に圧力を加えて固定でき
るようにスプリング29−1、29−2で基板固定台2
1側に付勢されている。また、押えアーム28−1、2
8−2は例えばロッドアンテナのように長手方向にその
長さを変えることができるようになっている。したがっ
て基板20の表面上の任意の位置をこれらの押えアーム
28−1、28−2で押えることができる。尚、この押
えアーム28−1、28−2に、耐熱性があり、キズを
付けにくいフッ素樹脂系(例えば、テフロン)の材料を
用いれば、基板20の表面上に電気或いは光の回路が形
成されていてもこれらを壊したりすることが少ない。ま
た、押えアーム28−1、28−2の先端が丸みを帯び
ていればなおよい。Holding arms 28-1 and 2 as a fixing mechanism
8-2 is a substrate fixing base 2 with springs 29-1 and 29-2 so that the surface of the substrate 20 can be fixed by applying pressure.
It is biased to the 1st side. Also, the presser arms 28-1, 2
8-2 can change its length in the longitudinal direction like a rod antenna, for example. Therefore, an arbitrary position on the surface of the substrate 20 can be pressed by these pressing arms 28-1 and 28-2. If the pressing arms 28-1 and 28-2 are made of a fluororesin-based material (for example, Teflon) that has heat resistance and is not easily scratched, an electric or optical circuit is formed on the surface of the substrate 20. Even if it is done, it is unlikely to break these. Further, it is more preferable that the tips of the presser arms 28-1 and 28-2 are rounded.
【0036】基板20の上側には、炭酸ガスレーザ装置
(図示せず)から出射した炭酸ガスレーザ光31を集光
してレーザビーム32とするレンズ33と、ガス導入管
34とガスノズル35からなりレーザビーム32の伝搬
方向に沿ってアシストガスGを流すガス導入系36とが
配置されている。On the upper side of the substrate 20, a laser beam consisting of a lens 33 for condensing a carbon dioxide gas laser beam 31 emitted from a carbon dioxide gas laser device (not shown) into a laser beam 32, a gas introduction pipe 34 and a gas nozzle 35. A gas introduction system 36 for flowing the assist gas G is arranged along the propagation direction of 32.
【0037】基板20の表面上にはレーザビーム32が
照射される。レーザビーム32はレンズ33でP0 点に
焦点を結ぶように設定されている。P0 点で焦点を結ん
だレーザビーム32は、P0 点通過後再びビーム径が拡
がり、基板20の表面上には500μmから2000μ
m径のビームスポット径DB で照射される。レーザビー
ム32は、ガス導入管34で覆われているのでアシスト
ガスGの雰囲気に保たれている。The surface of the substrate 20 is irradiated with the laser beam 32. The laser beam 32 is set so that the lens 33 focuses the point P 0 . The laser beam 32 focused at the point P 0 has its beam diameter expanded again after passing through the point P 0 , and is 500 μm to 2000 μm on the surface of the substrate 20.
Irradiation is performed with a beam spot diameter D B of m diameter. Since the laser beam 32 is covered with the gas introduction pipe 34, it is kept in the atmosphere of the assist gas G.
【0038】ガス導入管34の出口部のガスノズル35
から吹き出されるアシストガスGの流量は非常に多い
が、本発明の構成によれば、移動式マグネットチャック
26−1、26−2、押えアーム28−1、28−2及
び真空吸引装置24によって基板固定台21上に密着、
固定されるので、アシストガスGのガス圧によって基板
20が浮上したり、振動したりすることはない。尚、押
えアーム28−1、28−2は図3に示したように非常
に広い範囲を面的に押える以外に狭い範囲を面的に押え
たり、基板20の複数箇所を接触面が点状となるような
部材で押えるようにしてもよい。A gas nozzle 35 at the outlet of the gas introduction pipe 34
Although the flow rate of the assist gas G blown out from the device is very large, according to the configuration of the present invention, it is possible to use the movable magnet chucks 26-1, 26-2, the holding arms 28-1, 28-2 and the vacuum suction device 24. Adhesion on the board fixing base 21,
Since it is fixed, the substrate 20 does not float or vibrate due to the gas pressure of the assist gas G. The pressing arms 28-1 and 28-2 can press an extremely wide area in a plane as shown in FIG. You may make it hold down by a member which becomes.
【0039】次に数値を挙げて説明するがこれに限定さ
れるものではない。Next, numerical values will be described, but the present invention is not limited thereto.
【0040】図1に示した装置を用い、厚さが1mm
で、50mm角のムライト基板を16分割した場合につ
いて説明する。Using the apparatus shown in FIG. 1, the thickness is 1 mm.
Now, a case where a 50 mm square mullite substrate is divided into 16 parts will be described.
【0041】炭酸ガスレーザビームの波長を10.6μ
mとし、O点での光パワーを60W(アシストガスGを
流さない状態での連続発振の光パワー値)とし、P0 点
から基板20までの距離を約13mmとし、ガスノズル
35でのアシストガスとしてのN2 ガスの圧力を3Kg
/cm2 とし、XY移動装置25による基板20の移動
速度を10mm/secとして基板20を16等分に割
断した。割断中に基板20の浮上及び振動はなく、連続
した工程で16分割することができた。The wavelength of the carbon dioxide laser beam is set to 10.6 μm.
m, the optical power at point O is 60 W (optical power value of continuous oscillation without flowing assist gas G), the distance from point P 0 to substrate 20 is about 13 mm, and the assist gas at gas nozzle 35 is The pressure of N 2 gas as 3 Kg
/ Cm 2 and the moving speed of the substrate 20 by the XY moving device 25 was 10 mm / sec, and the substrate 20 was divided into 16 equal parts. There was no floating or vibration of the substrate 20 during the cutting, and it was possible to divide into 16 in a continuous process.
【0042】次に厚さが約1.1mmで、450mm×
560mmの無アルカリガラス基板(基板の反り:±
0.1mm)を同様にして割断を行ったが、基板の反り
があるにも係わらず、割断中に基板の浮上や振動はな
く、いずれの場合も割断面にマイクロクラックがなく、
かつ平滑な面を得ることができた。また割断線も非常に
直線性よく安定した割断を行うことができた。尚、蒸発
切断を行う場合には、基板固定台に、レーザビームが基
板を貫通した後にそのレーザビームを伝搬させて拡散さ
せるための溝を設けておけばよい。Next, the thickness is about 1.1 mm and 450 mm ×
560 mm non-alkali glass substrate (substrate warpage: ±
0.1 mm) was similarly cleaved, but despite the warpage of the substrate, there was no floating or vibration of the substrate during the cleaving, and in each case there were no microcracks on the cleaved surface,
And a smooth surface could be obtained. In addition, the breaking line was very linear and stable cutting could be performed. When the evaporation cutting is performed, the substrate fixing base may be provided with a groove for propagating and diffusing the laser beam after the laser beam penetrates the substrate.
【0043】[0043]
【発明の効果】以上要するに本発明によれば、次のよう
な優れた効果を発揮する。In summary, according to the present invention, the following excellent effects are exhibited.
【0044】基板移動装置に設けられた押えアームで基
板の炭酸ガスレーザ光の照射面の近傍を押えるようにし
たので、基板の切断面或いは割断面が平滑で、マイクロ
クラックが発生することがない。Since the pressing arm provided in the substrate moving device presses the vicinity of the surface of the substrate irradiated with the carbon dioxide laser light, the cut surface or the fractured surface of the substrate is smooth and no microcracks are generated.
【図1】本発明の基板の加工方法を適用した加工装置の
一実施例を示す図である。FIG. 1 is a diagram showing an embodiment of a processing apparatus to which a substrate processing method of the present invention is applied.
【図2】(a)は加工前の基板の平面図、(b)は加工
後の基板の平面図を示す。2A is a plan view of a substrate before processing, and FIG. 2B is a plan view of a substrate after processing.
【図3】本発明の基板の加工方法の原理を説明するため
の説明図である。FIG. 3 is an explanatory diagram for explaining the principle of the substrate processing method of the present invention.
【図4】集積回路の切断、分離方法を説明するための説
明図である。FIG. 4 is an explanatory diagram for explaining a method of cutting and separating an integrated circuit.
【図5】本発明者が先に提案した炭酸ガスレーザ光の照
射によるガラス切断装置の構成図である。FIG. 5 is a configuration diagram of a glass cutting device that has been previously proposed by the inventor of the present invention by irradiation with carbon dioxide gas laser light.
20 基板 24 真空吸引装置 28−1、28−2 固定機構(押えアーム) 33 集光系(レンズ) 36 ガス導入系 100 基板移動装置 G アシストガス 20 Substrate 24 Vacuum Suction Device 28-1, 28-2 Fixing Mechanism (Holding Arm) 33 Condensing System (Lens) 36 Gas Introducing System 100 Substrate Moving Device G Assist Gas
Claims (5)
シストガスを流しながら、基板移動装置上に載置された
加工用の基板上に炭酸ガスレーザ光を照射しつつ、該基
板を上記炭酸ガスレーザ光の伝搬方向と直交する方向に
移動させ、該基板の一端から他端までを切断加工或いは
割断加工する基板の加工方法において、上記基板移動装
置に設けられた押えアームで上記基板の炭酸ガスレーザ
光の照射面の近傍を押えるようにしたことを特徴とする
基板の加工方法。1. A carbon dioxide gas laser beam is irradiated onto a substrate for processing mounted on a substrate moving device while the carbon dioxide gas laser beam is radiated while an assist gas is flowed along the propagation direction of the carbon dioxide gas laser beam. In a direction orthogonal to the propagation direction of the substrate, in the substrate processing method of cutting or cleaving from one end to the other end of the substrate, a pressing arm provided in the substrate moving device is used to A method of processing a substrate, characterized in that the vicinity of the irradiation surface is pressed.
2か所を押える請求項1記載の基板の加工方法。2. The method for processing a substrate according to claim 1, wherein the holding arm holds at least two places of the substrate.
真裏以外の裏面を真空吸着で上記基板移動装置上に固定
する請求項1記載の基板の加工方法。3. The method for processing a substrate according to claim 1, wherein the back surface of the substrate other than the back surface of the carbon dioxide laser light irradiation surface is fixed on the substrate moving device by vacuum suction.
ザ装置から出射した炭酸ガスレーザ光を集光する集光系
と、上記炭酸ガスレーザ光の伝搬方向に沿ってアシスト
ガスを流すガス導入系と、上記基板を上記炭酸ガスレー
ザ光の伝搬方向と直交する方向に移動させる基板移動装
置と、該基板移動装置上に設けられ上記基板の炭酸ガス
レーザ光の照射面の近傍を押えアームで押える固定機構
とを備えたことを特徴とする基板の加工装置。4. A carbon dioxide laser device, a condenser system for condensing carbon dioxide laser light emitted from the carbon dioxide laser device, a gas introduction system for flowing an assist gas along the propagation direction of the carbon dioxide laser light, and the substrate. A substrate moving device for moving the carbon dioxide gas laser light in a direction orthogonal to the propagation direction of the carbon dioxide laser light, and a fixing mechanism provided on the substrate moving device for pressing a vicinity of the carbon dioxide laser light irradiation surface of the substrate with a holding arm. A substrate processing device characterized by the above.
真裏以外の裏面を真空吸着で上記基板移動装置上に固定
する真空吸引装置を上記基板移動装置に設けた請求項4
記載の基板の加工装置。5. The substrate moving device is provided with a vacuum suction device for fixing the back surface of the substrate other than the back surface of the carbon dioxide laser light irradiation surface to the substrate moving device by vacuum suction.
The substrate processing apparatus described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7168914A JPH0919782A (en) | 1995-07-04 | 1995-07-04 | Substrate processing method and processing apparatus thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7168914A JPH0919782A (en) | 1995-07-04 | 1995-07-04 | Substrate processing method and processing apparatus thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0919782A true JPH0919782A (en) | 1997-01-21 |
Family
ID=15876908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7168914A Pending JPH0919782A (en) | 1995-07-04 | 1995-07-04 | Substrate processing method and processing apparatus thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0919782A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007508157A (en) * | 2003-07-02 | 2007-04-05 | イェーノプティク アウトマティジールングステヒニーク ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for separating flat ceramic workpieces by calculated radiation spot length |
| WO2009081621A1 (en) * | 2007-12-21 | 2009-07-02 | Mitsuboshi Diamond Industrial Co., Ltd. | Laser processing apparatus and laser processing method |
| CN107552978A (en) * | 2017-10-16 | 2018-01-09 | 河南艾顿机床有限公司 | The air draft system and laser cutting machine of a kind of laser cutting machine |
| WO2025074881A1 (en) * | 2023-10-05 | 2025-04-10 | 株式会社 東芝 | Method for manufacturing ceramic scribe substrate, method for manufacturing ceramic substrate, and method for manufacturing ceramic circuit board |
-
1995
- 1995-07-04 JP JP7168914A patent/JPH0919782A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007508157A (en) * | 2003-07-02 | 2007-04-05 | イェーノプティク アウトマティジールングステヒニーク ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for separating flat ceramic workpieces by calculated radiation spot length |
| WO2009081621A1 (en) * | 2007-12-21 | 2009-07-02 | Mitsuboshi Diamond Industrial Co., Ltd. | Laser processing apparatus and laser processing method |
| CN101903129A (en) * | 2007-12-21 | 2010-12-01 | 三星钻石工业股份有限公司 | Laser processing device and laser processing method |
| JP5070299B2 (en) * | 2007-12-21 | 2012-11-07 | 三星ダイヤモンド工業株式会社 | Laser processing apparatus and laser processing method |
| CN107552978A (en) * | 2017-10-16 | 2018-01-09 | 河南艾顿机床有限公司 | The air draft system and laser cutting machine of a kind of laser cutting machine |
| WO2025074881A1 (en) * | 2023-10-05 | 2025-04-10 | 株式会社 東芝 | Method for manufacturing ceramic scribe substrate, method for manufacturing ceramic substrate, and method for manufacturing ceramic circuit board |
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