JPH09199430A - Method and apparatus for continuously forming functional deposited film - Google Patents
Method and apparatus for continuously forming functional deposited filmInfo
- Publication number
- JPH09199430A JPH09199430A JP8023197A JP2319796A JPH09199430A JP H09199430 A JPH09199430 A JP H09199430A JP 8023197 A JP8023197 A JP 8023197A JP 2319796 A JP2319796 A JP 2319796A JP H09199430 A JPH09199430 A JP H09199430A
- Authority
- JP
- Japan
- Prior art keywords
- shaped member
- deposited film
- strip
- discharge
- belt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Control Of Electrical Variables (AREA)
Abstract
(57)【要約】 （修正有）
【課題】異常な放電や帯状部材と堆積膜形成チャンバー
部材等との接触を検出し、それらを解消することによ
り、帯状部材上に形成される大面積機能性堆積膜の収率
を改善し、特性の均一化と向上を図るようにした方法お
よびその装置を提供する。
【解決手段】帯状部材を長手方向に連続的に移動させな
がら、ガスゲートにより結ばれた複数の堆積膜形成チャ
ンバーを通過させ、高周波電力により原料ガスを分解プ
ラズマ化する放電炉にて、帯状部材上に機能性堆積膜を
形成する装置において、堆積膜形成チャンバーの放電炉
から外部に拡散もしくは漏洩する異常放電を、堆積膜形
成チャンバーを構成する部材の一部に電圧を印加して電
圧印加部分と接地電位との間を流れる電流により検知
し、検知による信号に基づいて帯状部材の移動する軌道
を調整することによって、異常放電を解消する。
(57) [Abstract] (Correction) [Problem] Large area function formed on the belt-like member by detecting abnormal discharge or contact between the belt-like member and the deposited film forming chamber member and eliminating them. Provided is a method and an apparatus for improving the yield of a functionally deposited film and for making the characteristics uniform and improved. SOLUTION: While continuously moving the strip-shaped member in the longitudinal direction, the strip-shaped member is passed through a plurality of deposition film forming chambers connected by gas gates, and the raw material gas is decomposed into plasma by high-frequency power. In the apparatus for forming a functional deposited film, an abnormal discharge that diffuses or leaks from the discharge furnace of the deposited film forming chamber to the outside is applied to a part of the member forming the deposited film forming chamber by applying a voltage to The abnormal discharge is eliminated by detecting the current flowing between the band-shaped member and the ground potential and adjusting the moving path of the belt-shaped member based on the detected signal.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ロール・ツー・ロ
ール方式によって、大面積の機能性堆積膜を連続的に帯
状部材上に形成する機能性堆積膜の連続的形成方法及び
その装置に関し、特に、光起電力素子等の積層素子の形
成方法及び装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for continuously forming a functional deposited film for continuously forming a large-area functional deposited film on a belt-shaped member by a roll-to-roll method. In particular, it relates to a method and apparatus for forming a laminated element such as a photovoltaic element.
【０００２】[0002]
【従来の技術】基板上に光起電力素子等に用いる半導体
機能性堆積膜を連続的に形成する方法として、各種半導
体層を形成するための独立した成膜室を設け、これらの
各成膜室はゲートバルブを介したロードロック方式にて
連結され、基板を各成膜室へ順次移動して各種半導体層
を形成する方法が知られている。量産性を著しく向上さ
せる方法としては、米国特許第４，４００，４０９号明
細書には、ロール・ツー・ロール（Ｒｏｌｌ ｔｏ Ｒ
ｏｌｌ）方式を採用した連続プラズマＣＶＤ法が開示さ
れている。この方法によれば、長尺の磁性体帯状部材を
基板として、複数のグロー放電領域において必要とされ
る導電型の半導体層を堆積形成しつつ、基板をその長手
方向に連続的に搬送することによって、半導体接合を有
する素子を連続形成することができるとされている。2. Description of the Related Art As a method for continuously forming a semiconductor functionally deposited film used for a photovoltaic element or the like on a substrate, an independent film forming chamber for forming various semiconductor layers is provided and each of these film forming films is formed. A method is known in which the chambers are connected by a load lock method via a gate valve, and the substrate is sequentially moved to each film forming chamber to form various semiconductor layers. As a method for significantly improving mass productivity, U.S. Pat. No. 4,400,409 discloses a roll-to-roll method.
The continuous plasma CVD method adopting the Oll system is disclosed. According to this method, by using a long magnetic strip-shaped member as a substrate, conductive layers of semiconductor layers required for a plurality of glow discharge regions are deposited and formed, and the substrate is continuously conveyed in the longitudinal direction thereof. It is said that an element having a semiconductor junction can be continuously formed.
【０００３】以下に、図５、図６を用いて典型的なロー
ル・ツー・ロール方式の大面積機能性堆積膜（たとえ
ば、光起電力素子）の形成方法について述べる。図５は
典型的なロール・ツー・ロール方式の大面積機能性堆積
膜（光起電力素子）形成装置の概略図である。図６は、
図５中に示される、ロール・ツー・ロール方式による大
面積機能性堆積膜（光起電力素子）の形成に使用され
る、典型的な高周波プラズマＣＶＤ法による堆積膜形成
チャンバーのひとつの詳細断面図である。まず、図５に
おいて、１はロール・ツー・ロール方式大面積機能性堆
積膜形成装置の全体を示す。２は長尺の磁性体帯状部材
１４の繰り出しチャンバー、８は帯状部材１４の巻き取
りチャンバー、３〜７は機能性堆積膜形成チャンバーで
ある。９はガスゲート、１０はゲートガス導入手段、１
１は帯状部材の加熱手段（ヒーター）、１２は高周波
（以下ＲＦと記述）放電炉、１３はマイクロ波（以下μ
Ｗと記述）放電炉である。１５、１６はボビン、１７は
マグネツトローラーである。次に、図６において、２７
は放電炉、１８はランプヒーターハウス、１９は堆積膜
厚調整板、２０は堆積膜形成用原材料ガス供給手段、２
１は高周波導入手段、５０は高周波電極、２２は排気手
段、２３はガス加熱手段、２４はガスゲートクリアラン
ス（間隙）、２５は帯状部材１４と膜厚調整板１９のク
リアランス（間隙）、２６の斜線部は正常な（理想的
な）放電領域である。A method of forming a typical roll-to-roll type large area functional deposition film (for example, a photovoltaic element) will be described below with reference to FIGS. FIG. 5 is a schematic view of a typical roll-to-roll type large area functional deposited film (photovoltaic device) forming apparatus. FIG.
One detailed cross section of a deposition film forming chamber by a typical high frequency plasma CVD method used for forming a large area functional deposition film (photovoltaic device) by the roll-to-roll method shown in FIG. It is a figure. First, in FIG. 5, reference numeral 1 denotes the entire roll-to-roll type large area functional deposited film forming apparatus. Reference numeral 2 is a feeding chamber for the long magnetic strip member 14, 8 is a winding chamber for the strip member 14, and 3 to 7 are functional deposited film forming chambers. 9 is a gas gate, 10 is a gate gas introduction means, 1
Reference numeral 1 is a heating means (heater) for a belt-shaped member, 12 is a high frequency (hereinafter referred to as RF) discharge furnace, and 13 is a microwave (hereinafter μ).
It is a discharge furnace. Reference numerals 15 and 16 are bobbins, and 17 is a magnet roller. Next, referring to FIG.
Is a discharge furnace, 18 is a lamp heater house, 19 is a deposited film thickness adjusting plate, 20 is a raw material gas supply means for forming a deposited film, 2
Reference numeral 1 is a high-frequency introduction means, 50 is a high-frequency electrode, 22 is an exhaust means, 23 is a gas heating means, 24 is a gas gate clearance (gap), 25 is a clearance (gap) between the belt-shaped member 14 and the film thickness adjusting plate 19, and 26 The shaded area is a normal (ideal) discharge area.
【０００４】次に、図５、図６に基づいて、その動作に
ついて説明する。ロール・ツー・ロール方式大面積機能
性堆積膜形成装置１は両端の繰り出しチャンバー２およ
び巻き取りチャンバー８、その間に複数の半導体層を形
成するための堆積膜形成用チャンバー３〜７が、ガスゲ
ート９を介して連なって構成されている。まず、ボビン
１５にロール状に巻かれた長尺の磁性体帯状部材１４
を、繰り出しチャンバー２から堆積膜形成用チャンバー
３〜７やガスゲート９を通して、巻き取りチャンバー８
に懸垂曲線状にテンションを掛けて張り渡す。ガスゲー
ト９内及び堆積膜形成用チャンバー３〜７内には、マグ
ネットローラー１７が設置され、張り渡された帯状部材
１４を引きつけて、帯状部材の移動する軌道を固定して
いる。次に、装置１を、帯状部材１４の繰り出しチャン
バー２、帯状部材の巻き取りチャンバー８、機能性堆積
膜形成チャンバー３〜７それぞれに設けられた不図示の
排気手段により１０Ｅ−３トール台まで減圧に排気され
る。堆積膜形成用チャンバー３〜７の堆積膜形成条件の
独立性を維持するために、ガスゲート９には不活性ガス
または水素ガスをゲートガスとしてゲートガス導入手段
１０から導入する。堆積膜形成用チャンバー３〜７に、
堆積膜形成用原材料ガスをガス供給手段２０により導入
し、チャンバー内の圧力を一定に制御しつつ、ＲＦ電
力、または、μＷ電力を堆積膜形成チャンバー内の放電
炉に供給し放電を生起、維持し、堆積膜形成用原材料ガ
スを分解して、連続して移動供給される帯状部材上に機
能性堆積膜を形成するものである。このとき帯状部材１
４は、堆積膜形成チャンバー３〜７内に設置された加熱
手段１１により堆積膜形成条件の温度に制御される。連
続的に一定速度で繰り出しチャンバー２から供給される
帯状部材１４上には、堆積膜形成チャンバー３、４、
５、６、７と移動しつつ順次異なった機能性堆積膜が積
層されて形成され、最終的に巻き取りチャンバー８のボ
ビン１６に巻き取られる。Next, the operation will be described with reference to FIGS. The roll-to-roll type large area functional deposition film forming apparatus 1 includes a feeding chamber 2 and a winding chamber 8 at both ends, and deposition film forming chambers 3 to 7 for forming a plurality of semiconductor layers therebetween, a gas gate 9 It is configured by connecting through. First, the long magnetic strip member 14 wound around the bobbin 15 in a roll shape.
From the feeding chamber 2 through the deposited film forming chambers 3 to 7 and the gas gate 9
The tension is applied to the suspension curve and stretched over. A magnet roller 17 is installed in the gas gate 9 and in the deposited film forming chambers 3 to 7, and attracts the stretched belt-shaped member 14 to fix the moving path of the belt-shaped member. Next, the apparatus 1 is decompressed to a level of 10E-3 Torr by exhaust means (not shown) provided in each of the feeding chamber 2 for the strip-shaped member 14, the winding chamber 8 for the strip-shaped member, and the functional deposited film forming chambers 3 to 7. Exhausted to. In order to maintain the independence of the deposition film forming conditions in the deposition film forming chambers 3 to 7, an inert gas or hydrogen gas is introduced into the gas gate 9 as a gate gas from the gate gas introducing means 10. In the deposited film forming chambers 3 to 7,
A raw material gas for forming a deposited film is introduced by a gas supply means 20, and RF power or μW power is supplied to a discharge furnace in the deposited film forming chamber while controlling the pressure in the chamber to a constant level to cause and maintain a discharge. Then, the raw material gas for forming the deposited film is decomposed to form a functional deposited film on the strip-shaped member continuously moved and supplied. At this time, the belt-shaped member 1
4 is controlled by the heating means 11 installed in the deposited film forming chambers 3 to 7 to the temperature of the deposited film forming conditions. The deposition film forming chambers 3, 4, are formed on the strip-shaped member 14 continuously supplied from the feeding chamber 2 at a constant speed.
While moving to 5, 6, and 7, different functional deposition films are sequentially laminated and formed, and finally wound on the bobbin 16 of the winding chamber 8.
【０００５】[0005]
【発明が解決しようとする課題】ところで、ロール・ツ
ー・ロール方式により、長尺の帯状部材を連続的に機能
性堆積膜形成装置に供給し、大面積にわたって均質で高
性能な機能性堆積膜または、光起電力素子を形成するた
めには、各堆積膜形成炉内の放電を放電炉に確実に閉じ
込め、安定した放電状態を形成しなければならない。し
かしながら、放電電力（ＲＦやμＷ）が放電炉の外部に
漏れたり、堆積膜の原材料ガスや放電炉内の放電が外部
に拡散すると、放電炉外部で異常な放電が生起し、そこ
で放電電力を消費し、放電炉内の放電が弱くなり所望の
堆積膜形成条件または、放電状態が得られなくなってし
まうという問題があった。また、放電が放電炉から帯状
部材の移動方向またはその反対方向（即ち、図６におけ
る帯状部材と堆積膜厚調整板のクリアランス２５）に沿
って漏れると、帯状部材上に形成される堆積膜厚が所望
よりも厚くなったり、膜厚が不安定になったり、堆積膜
や素子の諸特性が低下するという問題があった。放電の
放電炉からの漏洩、拡散を抑制するには、帯状部材と堆
積膜厚調整板のクリアランスを小さく（１〜２ｍｍ）す
る事が有効であるが、帯状部材のもともと持つ耳波（端
部の波打ち）やゆがみ、ねじれ、さらには帯状部材の背
面（機能性堆積膜形成面の裏側）からのヒーターの熱輻
射やプラズマによる昇温による熱変形の為に、クリアラ
ンスは帯状部材１ロールの連続的な供給のなかで、一定
にはならず、時間的に変化する。更に、クリアランスは
帯状部材の幅方向（搬送方向と直角方向）で一様にはな
らない。By the way, by the roll-to-roll method, a long strip-shaped member is continuously supplied to the functional deposited film forming apparatus, and the functional deposited film is homogeneous and has high performance over a large area. Alternatively, in order to form a photovoltaic element, it is necessary to reliably confine the discharge in each deposition film forming furnace in the discharge furnace and form a stable discharge state. However, if the discharge power (RF or μW) leaks to the outside of the discharge furnace, or if the raw material gas of the deposited film or the discharge inside the discharge furnace diffuses to the outside, an abnormal discharge occurs outside the discharge furnace, and the discharge power is generated there. There is a problem that the discharge is consumed and the discharge in the discharge furnace becomes weak, and the desired deposited film forming condition or the discharge state cannot be obtained. Further, when the discharge leaks from the discharge furnace in the moving direction of the strip-shaped member or in the opposite direction (that is, the clearance 25 between the strip-shaped member and the deposited film thickness adjusting plate in FIG. 6), the deposited film thickness formed on the strip-shaped member. However, there are problems that the thickness becomes thicker than desired, the thickness becomes unstable, and the deposited film and various characteristics of the device deteriorate. In order to suppress the leakage and diffusion of discharge from the discharge furnace, it is effective to make the clearance between the strip-shaped member and the deposited film thickness adjusting plate small (1-2 mm). Waveform), distortion, twisting, and thermal deformation from the backside of the strip-shaped member (the backside of the surface on which the functional deposited film is formed) due to heat radiation from the heater and the temperature rise due to plasma, the clearance is a continuous roll of strip-shaped member. Supply is not constant and changes with time. Further, the clearance is not uniform in the width direction of the belt-shaped member (direction perpendicular to the conveyance direction).
【０００６】このようなことから、帯状部材を最初に装
置に張りめぐらせるときに、クリアランスをあらかじめ
調整しても、堆積膜形成中には再調整の必要にせまられ
ることが多々あった。しかし、すべての異常放電を装置
の外部から目視にて確認することは困難であり、その検
出手段や前記異常な放電の解消、抑制方法の開発が要請
されていた。更に、帯状部材の堆積膜形成面側が、移動
中に、帯状部材に対して数ミリのクリアランス（間隙）
をもって相対して面する堆積膜形成チャンバーの部材
（前記堆積膜厚調整板）やガスゲート部材に接触し、す
り傷や打痕を生じ、機能性堆積膜の諸特性を著しく損ね
たり、光起電力素子の諸特性や収率を低下させる問題が
あった。この接触部位を特定し、接触を堆積膜形成中に
解消する方法の開発も要請されるところである。For this reason, when the strip-shaped member is first stretched on the apparatus, even if the clearance is adjusted in advance, it is often necessary to readjust it during the formation of the deposited film. However, it is difficult to visually confirm all abnormal discharges from the outside of the device, and there has been a demand for development of a detecting means for the abnormal discharges and a method for eliminating and suppressing the abnormal discharges. Furthermore, the side of the deposited film forming surface of the strip-shaped member, while moving, has a clearance (gap) of several millimeters with respect to the strip-shaped member.
Contacting the members of the deposited film forming chamber (the above-mentioned deposited film thickness adjusting plate) and the gas gate member facing each other with scratches and dents, and significantly impairing the various properties of the functional deposited film There is a problem that the various characteristics and yield of the device are reduced. It is also required to develop a method for identifying this contact site and eliminating the contact during the formation of the deposited film.
【０００７】そこで、本発明は、上述の如き従来のロー
ル・ツー・ロール方式による大面積機能性堆積膜の連続
形成方法及び装置における諸問題を克服して、異常な放
電や帯状部材と堆積膜形成チャンバー部材等との接触を
検出し、それらを解消することにより、連続して移動す
る帯状部材上に形成される大面積機能性堆積膜の収率を
改善し、その諸特性の均一化と向上を図るようにした機
能性堆積膜の連続的形成方法およびその装置を提供する
ことにある。Therefore, the present invention overcomes various problems in the method and apparatus for continuously forming a large-area functional deposited film by the conventional roll-to-roll method as described above, and thus causes an abnormal discharge or a strip-shaped member and a deposited film. By detecting the contact with the forming chamber member etc. and eliminating them, the yield of large area functional deposition film formed on the continuously moving strip-shaped member is improved, and its characteristics are made uniform. It is an object of the present invention to provide a method and an apparatus for continuously forming a functionally deposited film which is improved.
【０００８】[0008]
【課題を解決するための手段】本発明は、上記課題を解
決するために、機能性堆積膜の連続的形成方法およびそ
の装置を、つぎのように構成したものである。すなわ
ち、本発明の機能性堆積膜の連続的形成方法は、帯状部
材を長手方向に連続的に移動させながら、ガスゲートに
より結ばれた複数の堆積膜形成チャンバーを通過させ、
該堆積膜形成チャンバー内の、該帯状部材とほかの導電
性部材に囲まれ、高周波電力により原料ガスを分解プラ
ズマ化する放電炉にて、該帯状部材上に機能性堆積膜を
形成する機能性堆積膜の連続的形成方法において、前記
堆積膜形成チャンバーの放電炉から外部に拡散もしくは
漏洩する異常放電を、堆積膜形成チャンバーの部材の一
部に電圧を印加して該電圧印加部分と接地電位との間を
流れる電流により検知し、該検知による信号に基づいて
帯状部材の移動する軌道を調整することによって、前記
異常放電を解消するようにしたことを特徴としている。
そして、この発明においては、この電流の検知を、前記
帯状部材と対峙する堆積膜厚調整板の表面に設置された
放電検出器、または、前記堆積膜形成チャンバーのラン
プハウス表面に設置された放電検出器により検知するよ
うにすることができる。その際、前記放電検出器は、帯
状部材に対する電位印加点を帯状部材の幅方向に複数個
分散させて構成することが好ましい。また、本発明の機
能性堆積膜の連続的形成方法は、帯状部材を長手方向に
連続的に移動させながら、ガスゲートにより結ばれた複
数の堆積膜形成チャンバーを通過させ、該堆積膜形成チ
ャンバー内の、該帯状部材とほかの導電性部材に囲ま
れ、高周波電力により原料ガスを分解プラズマ化する放
電炉にて、該帯状部材上に機能性堆積膜を形成する機能
性堆積膜の連続的形成方法において、前記帯状部材の堆
積膜形成側表面が堆積膜形成チャンバーの部材に接触す
ることを、該帯状部材と対峠する堆積膜形成チャンバー
部材の一部分に電圧を印加して該電圧の短絡により検知
し、該短絡による信号に基づいて帯状部材の移動する軌
道を調整することによって、前記接触を解消するように
したことを特徴としている。そして、この発明において
は、この電圧の短絡の検知は、前記帯状部材と対峙する
ガスゲートの部材表面に設置された接触検出器、また
は、前記帯状部材と対峙する堆積膜厚調整板の表面に設
置された放電検出器兼接触検出器により検知するように
することができる。この場合にも、前記接触検出器は、
帯状部材に対する電位印加点を帯状部材の幅方向に複数
個分散させて構成することが好ましい。また、これらの
発明においては、前記印加電圧は、数ボルト程度の直流
電圧であることが好ましい。また、本発明においては、
前記帯状部材の移動する軌道を調整は、該磁性体である
帯状部材が堆積膜形成チャンバーを移動する軌道を固定
するマグネットローラーと該帯状部材と対峙する堆積膜
厚調整板との間隙を、該マグネットローラーの両端の設
置高さを独立して変えることによって行うことができ
る。さらに、本発明の機能性堆積膜の連続的形成装置
は、帯状部材を長手方向に連続的に移動させながら、ガ
スゲートにより結ばれた複数の堆積膜形成チャンバーを
通過させ、該堆積膜形成チャンバー内の、該帯状部材と
ほかの導電性部材に囲まれ、高周波電力により原料ガス
を分解プラズマ化する放電炉にて、該帯状部材上に機能
性堆積膜を形成する機能性堆積膜の連続的形成装置にお
いて、、前記堆積膜形成チャンバーの放電炉から外部に
拡散もしくは漏洩する異常放電を、堆積膜形成チャンバ
ーの部材の一部に電圧を印加して該電圧印加部分と接地
電位との間を流れる電流により検知する手段と、該検知
手段による信号に基づいて該帯状部材の移動する軌道を
調整する手段とを備え、前記異常放電を解消するように
したことを特徴としている。そして、この発明において
は、この電流の検知手段は、前記帯状部材と対峙する堆
積膜厚調整板の表面に設置された放電検出器、または、
前記電流の検知手段は、前記堆積膜形成チャンバーのラ
ンプハウス表面に設置された放電検出器により構成する
ことができ、この放電検出器は、帯状部材の幅方向に複
数個分散させて構成することが好ましい。また、本発明
の機能性堆積膜の連続的形成装置は、帯状部材を長手方
向に連続的に移動させながら、ガスゲートにより結ばれ
た複数の堆積膜形成チャンバーを通過させ、該堆積膜形
成チャンバー内の、該帯状部材とほかの導電性部材に囲
まれ、高周波電力により原料ガスを分解プラズマ化する
放電炉にて、該帯状部材上に機能性堆積膜を形成する機
能性堆積膜の連続的形成装置において、前記帯状部材の
堆積膜形成側表面が堆積膜形成チャンバーの部材に接触
することを、該帯状部材と対峠する堆積膜形成チャンバ
ー部材の一部分に電圧を印加して該電圧の短絡により検
知する手段と、該短絡による信号に基づいて帯状部材の
移動する軌道を調整する手段を備え、前記接触を解消す
るようにしたことを特徴としている。そして、この発明
においては、この短絡を検知する手段は、前記帯状部材
と対峙するガスゲートの部材表面に設置された接触検出
器、または、前記帯状部材と対峙する堆積膜厚調整板の
表面に設置された放電検出器兼接触検出器により構成さ
することができる、この接触検出器は、帯状部材の幅方
向に複数個分散させて構成することが好ましい。また、
これらの発明においては、前記帯状部材の移動する軌道
を調整する手段は、磁性体である帯状部材が堆積膜形成
チャンバーを移動する軌道を固定するマグネットローラ
ーと、該帯状部材と対峙する堆積膜厚調整板に対する該
マグネットローラーの両端の設置高さ位置を独立して調
整可能としたマグネットローラーの高さ調整手段とによ
り構成することができる。In order to solve the above-mentioned problems, the present invention comprises a method for continuously forming a functionally deposited film and an apparatus therefor as follows. That is, the method for continuously forming a functional deposited film of the present invention, while continuously moving the strip-shaped member in the longitudinal direction, to pass through a plurality of deposited film forming chambers connected by a gas gate,
Functionality for forming a functional deposited film on the strip-shaped member in a discharge furnace which is surrounded by the strip-shaped member and another conductive member in the deposited film forming chamber and decomposes the raw material gas into plasma by high frequency power. In the continuous method of forming a deposited film, an abnormal discharge that diffuses or leaks from the discharge furnace of the deposited film forming chamber to the outside is applied to a part of the member of the deposited film forming chamber by applying a voltage to the voltage applied portion and the ground potential. It is characterized in that the abnormal discharge is eliminated by detecting with a current flowing between and, and adjusting the moving path of the belt-shaped member based on the signal by the detection.
Further, in the present invention, the detection of this current is performed by a discharge detector installed on the surface of the deposited film thickness adjusting plate facing the belt-shaped member, or an electric discharge installed on the surface of the lamp house of the deposited film forming chamber. It can be detected by a detector. At this time, it is preferable that the discharge detector is configured by dispersing a plurality of potential application points on the strip-shaped member in the width direction of the strip-shaped member. Further, in the method for continuously forming a functional deposited film of the present invention, the strip-shaped member is continuously moved in the longitudinal direction while passing through a plurality of deposited film forming chambers connected by a gas gate, The continuous formation of the functional deposited film on the strip-shaped member in a discharge furnace which is surrounded by the strip-shaped member and another conductive member and decomposes the raw material gas into plasma by high frequency power. In the method, the contact of the surface of the strip-shaped member on the deposited film forming side with the member of the deposited film forming chamber is performed by applying a voltage to a part of the deposited film forming chamber member facing the strip-shaped member and short-circuiting the voltage. It is characterized in that the contact is eliminated by detecting and adjusting the moving trajectory of the belt-shaped member based on the signal due to the short circuit. Further, in the present invention, the detection of this voltage short-circuit is performed by a contact detector installed on the surface of the member of the gas gate facing the strip-shaped member or on the surface of the deposited film thickness adjusting plate facing the strip-shaped member. It is possible to detect it by the discharge detector and the contact detector which are operated. Also in this case, the contact detector is
It is preferable that a plurality of potential application points for the strip-shaped member are dispersed in the width direction of the strip-shaped member. Further, in these inventions, it is preferable that the applied voltage is a DC voltage of about several volts. In the present invention,
The movement of the strip-shaped member is adjusted by adjusting the gap between the magnet roller that fixes the trajectory of the strip-shaped member, which is the magnetic body, that moves in the deposition film forming chamber and the deposited film thickness adjusting plate that faces the strip-shaped member. This can be done by independently changing the installation height of both ends of the magnet roller. Further, in the continuous functional deposited film forming apparatus of the present invention, while continuously moving the strip-shaped member in the longitudinal direction, it passes through a plurality of deposited film forming chambers connected by gas gates, The continuous formation of the functional deposited film on the strip-shaped member in a discharge furnace which is surrounded by the strip-shaped member and another conductive member and decomposes the raw material gas into plasma by high frequency power. In the apparatus, an abnormal discharge that diffuses or leaks from the discharge furnace of the deposited film forming chamber to the outside is applied to a part of the member of the deposited film forming chamber and flows between the voltage application part and the ground potential. It is characterized in that it is provided with means for detecting with an electric current and means for adjusting the moving trajectory of the belt-shaped member based on a signal from the detecting means to eliminate the abnormal discharge. . In the present invention, the means for detecting the current is a discharge detector installed on the surface of the deposited film thickness adjusting plate facing the belt-shaped member, or
The current detection means can be configured by a discharge detector installed on the surface of the lamp house of the deposited film forming chamber, and the discharge detectors are formed by dispersing a plurality of discharge detectors in the width direction of the belt-shaped member. Is preferred. Further, in the apparatus for continuously forming a functional deposited film according to the present invention, while continuously moving the belt-shaped member in the longitudinal direction, it passes through a plurality of deposited film forming chambers connected by a gas gate, The continuous formation of the functional deposited film on the strip-shaped member in a discharge furnace which is surrounded by the strip-shaped member and another conductive member and decomposes the raw material gas into plasma by high frequency power. In the device, the contact of the surface of the strip-shaped member on which the deposited film is formed with the member of the deposited film forming chamber is controlled by applying a voltage to a part of the member of the deposited film forming chamber facing the strip-shaped member and short-circuiting the voltage. It is characterized in that the means for detecting and the means for adjusting the trajectory of the strip-shaped member based on the signal due to the short circuit are provided so as to eliminate the contact. Further, in the present invention, the means for detecting this short circuit is installed on the contact detector installed on the surface of the member of the gas gate facing the strip-shaped member, or on the surface of the deposited film thickness adjusting plate facing the strip-shaped member. It is preferable that the contact detectors are dispersed in the width direction of the strip-shaped member. Also,
In these inventions, the means for adjusting the orbit of movement of the strip-shaped member includes a magnet roller for fixing the orbit of movement of the strip-shaped member, which is a magnetic material, in the deposition film forming chamber, and a deposited film thickness facing the strip-shaped member. The height adjusting means of the magnet roller can independently adjust the installation height positions of both ends of the magnet roller with respect to the adjusting plate.
【０００９】[0009]
【発明の実施の形態】本発明は、上記のような特徴を備
えたものであるが、それは本発明者らのつぎのような知
見に基づくものである、すなわち、本発明者らは従来の
薄膜半導体機能性堆積膜の形成装置における上述の諸問
題を解決するために、前記本発明の課題を達成すべく鋭
意研究を重ねたところ、放電の放電炉外への漏洩及び、
拡散の度合いを、プラズマ中の電位差間を流れる電流に
より検出し、さらに帯状部材の堆積膜形成面に生じるす
り傷の発生位置が、堆積膜形成チャンバーの部材に帯状
部材に対して印加した電圧の帯状部材との接触による短
絡で検出できるということを解明した。本発明は、この
ような知見に基づき、さらに検討を重ねた結果完成に至
ったものである。BEST MODE FOR CARRYING OUT THE INVENTION The present invention has the above-mentioned characteristics, but it is based on the following knowledge of the present inventors, that is, the present inventors In order to solve the above-mentioned various problems in the apparatus for forming a thin film semiconductor functionally-deposited film, as a result of intensive research to achieve the object of the present invention, leakage of discharge to the outside of the discharge furnace, and
The degree of diffusion is detected by the current flowing between the potential differences in the plasma, and the position of the scratch on the deposition film forming surface of the strip-shaped member is determined by the voltage applied to the strip-shaped member in the deposition film forming chamber member. It was clarified that it can be detected by a short circuit due to contact with the belt-shaped member. The present invention has been completed as a result of further studies based on such findings.
【００１０】以下に、この点をさらに具体的説明する。
放電炉から外部に漏洩または、拡散する放電、及び帯状
部材と堆積膜形成チャンバー部材との接触は、帯状部材
と帯状部材に相対して面する放電炉部材のクリアランス
の大きさに依存する。即ち、放電炉から外部に漏洩また
は、拡散する放電は、帯状部材と帯状部材に相対して面
する放電炉部材のクリアランスから放電炉外部に流出す
る堆積膜形成用原材料ガス量が多い、もしくは流入する
ゲートガス量が多い、および、放電炉から外部に漏洩伝
搬する高周波、またはマイクロ波電力量が多いと発生し
やすくなる。放電炉から外部に漏洩または拡散する放電
を抑制し、放電炉内に閉じ込める為には、帯状部材と帯
状部材に相対して面する放電炉部材のクリアランスを小
さくすることが有効である。帯状部材と帯状部材に相対
して面する放電炉部材のクリアランスの大きさは、帯状
部材のもともと持つ耳波（端部の波打ち）やゆがみ、ね
じれ、さらには帯状部材の背面（機能性堆積膜形成面の
裏側）からのヒーターの熱輻射やプラズマによる昇温に
よる熱変形の為に、帯状部材の幅方向（搬送方向と直角
方向）で一様にはならない。また、長尺な帯状部材の連
続的な供給に伴いクリアランスが時間変化する。そのた
めに、常に、放電炉からの放電の漏洩または、拡散を監
視し、また、帯状部材と堆積膜形成チャンバー部材また
はガスゲート部材との接触を監視し、その拡散、接触が
生じた場合には、前記クリアランスの調整をすることが
必要となる。同様に、帯状部材と帯状部材に相対して面
する放電炉部材のクリアランスに注意して、帯状部材の
機能性堆積膜形成面に傷が生じないように前記クリアラ
ンスの調整を行わなければならない。This point will be described more specifically below.
The discharge leaking or diffusing from the discharge furnace to the outside and the contact between the strip-shaped member and the deposited film forming chamber member depend on the size of the clearance between the strip-shaped member and the discharge furnace member facing the strip-shaped member. That is, the discharge leaking or diffusing from the discharge furnace to the outside is large in amount of the raw material gas for forming a deposited film or flowing out from the discharge furnace through the clearance between the strip-shaped member and the discharge furnace member facing the strip-shaped member. If the amount of gate gas used is large, and the amount of high-frequency or microwave power that leaks and propagates from the discharge furnace to the outside is large, it is likely to occur. In order to suppress the discharge that leaks or diffuses from the discharge furnace to the outside and to confine it in the discharge furnace, it is effective to reduce the clearance between the belt-shaped member and the discharge furnace member facing the belt-shaped member. The size of the clearance between the strip-shaped member and the discharge furnace member facing the strip-shaped member depends on the original wave of the strip-shaped member (waviness at the end), distortion, twist, and the back surface of the strip-shaped member (functional deposition film). Due to the heat radiation of the heater from the rear side of the forming surface) and the thermal deformation due to the temperature rise by the plasma, it is not uniform in the width direction of the belt-shaped member (direction perpendicular to the carrying direction). Further, the clearance changes with time as the long strip-shaped member is continuously supplied. Therefore, always, discharge leakage from the discharge furnace, or to monitor the diffusion, and also to monitor the contact between the belt-shaped member and the deposited film forming chamber member or the gas gate member, if the diffusion, contact occurs, It is necessary to adjust the clearance. Similarly, attention must be paid to the clearance between the strip-shaped member and the discharge furnace member facing the strip-shaped member, and the clearance must be adjusted so that the surface of the strip-shaped member on which the functional deposited film is formed is not scratched.
【００１１】このようなことから、本発明における放電
漏洩及び拡散の検出手段の原理は、放電の導電性を利用
したものである。即ち、放電を検出したい空間を挟んだ
帯状部材または堆積膜形成チャンバー部材間に電圧を印
加し、その電位差間に電流が流れる事で、放電の存在を
検出するものである。印加電圧は、数ボルト程度の直流
電圧が好ましい。大きな電圧を印加することは、電圧印
加部周辺に、不必要な放電を生起させたり、放電炉内の
放電状態を乱すおそれがあるので好ましくない。また、
本発明における帯状部材の機能性堆積膜形成面に発生す
るすり傷の原因であるところの帯状部材と帯状部材に相
対して面する機能性堆積膜形成炉部材との接触の検出手
段の原理は、帯状部材と帯状部材に相対して面する機能
性堆積膜形成炉部材やガスゲート部材との２点間に電位
差を設け、短絡することで該２点間が接触することを検
出するものである。電位差は数ボルト程度が好ましい。
これ以上大きな電位差は、前述した理由と同様にして、
更に、短絡時の絶縁破壊によるスパークなどによるチャ
ンバーや帯状部材ヘのダメージを考慮すると好ましくな
い。帯状部材に相対して面する堆積膜形成チャンバー部
材上に、帯状部材にたいする電位印加点を、帯状部材の
幅方向（移動方向と直角方向）に複数個分散させて設け
ることで、耳波や、ゆがみ、ねじれを有する変形した帯
状部材の接触検出に対応することができる。From the above, the principle of the discharge leakage and diffusion detecting means in the present invention is to utilize the conductivity of the discharge. That is, the presence of discharge is detected by applying a voltage between the strip-shaped members or the deposited film forming chamber members that sandwich the space in which the discharge is desired to be detected and flowing a current between the potential differences. The applied voltage is preferably a DC voltage of about several volts. Applying a large voltage is not preferable because it may cause unnecessary discharge around the voltage application part or disturb the discharge state in the discharge furnace. Also,
The principle of the means for detecting the contact between the belt-shaped member and the functional deposited film-forming furnace member facing the belt-shaped member, which is a cause of scratches occurring on the surface of the belt-shaped member in which the functional deposited film is formed, is as follows. , A potential difference is provided between two points of the belt-shaped member and the functional deposited film forming furnace member facing the belt-shaped member or the gas gate member, and short-circuiting detects the contact between the two points. . The potential difference is preferably about several volts.
A larger potential difference than this is similar to the reason described above.
Furthermore, it is not preferable to consider damage to the chamber and the belt-shaped member due to sparks or the like due to dielectric breakdown at the time of short circuit. On the deposited film forming chamber member facing the strip-shaped member, a plurality of potential application points for the strip-shaped member are provided in a dispersed manner in the width direction of the strip-shaped member (direction perpendicular to the moving direction), so that an ear wave, It is possible to deal with the contact detection of the deformed strip-shaped member having the distortion and the twist.
【００１２】本発明においては放電炉からの放電漏洩ま
たは拡散状態から、放電炉内だけの正常な放電状態への
復帰は、帯状部材と帯状部材に相対して面する機能性堆
積膜形成炉部材との間のクリアランスを調整して行われ
る。クリアランスを調整することで、放電炉内外を出入
りする機能性堆積膜の原材料ガスやゲートガス量を調節
することができ、また、クリアランスを狭める事で、放
電生起、維持電力であるところのマイクロ波や高周波が
放電炉内から該クリアランスを伝搬して外部に漏洩する
量を少なくし、放電炉の外部で放電が生起しないように
するものである。前記クリアランスの調整は、帯状部材
に非対称な耳波、ゆがみ、ねじれがあるために、帯状部
材の幅方向の両端で独立して行わなければならない。即
ち、本発明において、前記クリアランスの調整は、堆積
膜形成チャンバーを移動する帯状部材を支持し、移動す
る軌道を固定するために設けられたマグネットローラー
の設置高さ位置を帯状部材の幅方向（搬送方向と直角方
向）の両端で独立して変えることで行われる。該マグネ
ットローラーには設置位置高さを堆積膜形成チャンバー
の外部から調整操作できるような機構を有する。本発明
においては、放電炉外部に漏洩、または拡散、生起した
異常な放電が検出されたならば、その検出信号をシーケ
ンサが受けて、該放電の検出部に近いマグネットローラ
ーの設置高さ位置調整を行い、異常な放電が消滅し、該
放電の検出信号が出なくなるまで、帯状部材と堆積膜形
成チャンバー部材のクリアランスを自動的に調整する。
本発明においては、帯状部材と帯状部材に相対して面す
る堆積膜形成チャンバー部材やガスゲート部材との接触
が検出されたならば、その検出信号をシーケンサが受け
て、該信号検出部に近いマグネットローラーの堆積膜形
成チャンバー部材またはガスゲート部材との距離調整に
より、帯状部材と帯状部材に相対して面する堆積膜形成
チャンバー部材またはガスゲート部材との接触が解消さ
れ、前記検出信号が出力されなくなるまで、帯状部材と
堆積膜形成チャンバー部材またはガスゲート部材とのク
リアランスを自動的に調整する。In the present invention, the recovery from the discharge leakage or diffusion state from the discharge furnace to the normal discharge state only in the discharge furnace is performed by the strip-shaped member and the functional deposited film forming furnace member facing the strip-shaped member. It is done by adjusting the clearance between and. By adjusting the clearance, it is possible to adjust the amount of raw material gas and gate gas for the functional deposited film that goes in and out of the discharge furnace. The amount of high-frequency waves propagating through the clearance from the inside of the discharge furnace and leaking to the outside is reduced so that no discharge occurs outside the discharge furnace. The clearance adjustment must be performed independently at both ends in the width direction of the band-shaped member because the band-shaped member has asymmetrical ear waves, distortion, and twist. That is, in the present invention, the adjustment of the clearance is performed by setting the installation height position of the magnet roller provided for supporting the strip-shaped member moving in the deposition film forming chamber and fixing the moving track in the width direction of the strip-shaped member ( It is carried out by changing independently at both ends (in the direction perpendicular to the transport direction). The magnet roller has a mechanism for adjusting the installation position height from the outside of the deposited film forming chamber. In the present invention, if an abnormal discharge that is leaked, diffused, or generated outside the discharge furnace is detected, the sequencer receives the detection signal and adjusts the installation height position adjustment of the magnet roller near the discharge detection unit. Then, the clearance between the belt-shaped member and the deposited film forming chamber member is automatically adjusted until the abnormal discharge disappears and the detection signal of the discharge disappears.
In the present invention, when the contact between the strip-shaped member and the deposited film forming chamber member or the gas gate member facing the strip-shaped member is detected, the sequencer receives the detection signal, and the magnet close to the signal detection unit. By adjusting the distance between the roller and the deposited film forming chamber member or the gas gate member, the contact between the belt-shaped member and the deposited film forming chamber member or the gas gate member facing the belt-shaped member is eliminated, and the detection signal is not output. , The clearance between the belt-shaped member and the deposited film forming chamber member or the gas gate member is automatically adjusted.
【００１３】図１に本発明を採用した高周波プラズマＣ
ＶＤ法による機能性堆積膜形成チャンバーを示した。図
において、２８は直流電源、２９は電流計、３０は電圧
計、３１、３３は放電検出器かつ帯状部材接触検出器、
３５は放電検出器、３７、３９は帯状部材接触検出器、
３２、３４、３６、３８、４０は絶縁碍子である。本発
明においては、放電炉２７の正常な放電領域２６からの
放電の漏洩や拡散を検出する放電検出器３１、３３が、
帯状部材１４と相対して面する帯状部材に放電炉で堆積
形成される膜厚を規定する堆積膜厚調整板１９の表面に
設置されている。この放電検出器３１、３３により、帯
状部材１４と堆積膜厚調整板１９の間隙で発生する放電
を検出することができる。また、ランプハウス１８の表
面にも放電検出器３５が設置され、放電領域２６からラ
ンプハウス側に漏洩する放電を検出するように構成され
ている。さらに、帯状部材１４の堆積膜形成チャンバー
部材やガスゲート部材との接触を検出する接触検出器３
７、３９が帯状部材の堆積膜形成面と相対するガスゲー
トの部材表面に設置されている。そして、ここでは前記
堆積膜厚調整板１９の表面に設置されている放電検出器
３１、３３が放電検出器を兼用している。FIG. 1 shows a high frequency plasma C adopting the present invention.
A chamber for forming a functional deposited film by the VD method is shown. In the figure, 28 is a DC power supply, 29 is an ammeter, 30 is a voltmeter, 31 and 33 are discharge detectors and belt-shaped member contact detectors,
35 is a discharge detector, 37 and 39 are belt-shaped member contact detectors,
Reference numerals 32, 34, 36, 38 and 40 are insulators. In the present invention, the discharge detectors 31 and 33 for detecting the leakage or diffusion of the discharge from the normal discharge region 26 of the discharge furnace 27 are
It is installed on the surface of a deposited film thickness adjusting plate 19 that regulates the film thickness deposited and formed in the discharge furnace on the belt-shaped member facing the belt-shaped member 14. The discharge detectors 31 and 33 can detect the discharge generated in the gap between the belt-shaped member 14 and the deposited film thickness adjusting plate 19. A discharge detector 35 is also installed on the surface of the lamp house 18, and is configured to detect a discharge leaking from the discharge region 26 to the lamp house side. Further, a contact detector 3 for detecting the contact of the strip-shaped member 14 with the deposited film forming chamber member or the gas gate member.
Nos. 7 and 39 are installed on the surface of the member of the gas gate, which faces the deposition film forming surface of the belt-shaped member. Further, here, the discharge detectors 31 and 33 provided on the surface of the deposited film thickness adjusting plate 19 also serve as discharge detectors.
【００１４】放電検出器及び、接触検出器には、接地さ
れた帯状部材、堆積膜形成チャンバー部材、ガスゲート
部材に対して、数ボルトの直流電圧が印加される。よっ
て、放電検出器は、周辺の部材に対して絶縁が施されて
いる。接触検出器には、電圧計が繋がれており、帯状部
材が接触して電圧が短絡した時には、それに応じて、信
号（１点鎖線）をシーケンサー８１に対して出力するよ
うになっている。また短絡を検知した場合には、測定系
に対するダメージを防ぐ為に瞬時に印加電圧を遮断する
しくみになっている。放電検出器には、電流計が繋がれ
ており、検出器に放電が触れて電流が流れると、信号
（１点鎖線）をシーケンサー８１に対して出力するよう
になっている。そして、シーケンサー８１からはマグネ
ットローラーの駆動系に対して、マグネットローラーと
堆積膜形成チャンバーのクリアランス調整指令（点線）
が出される。図２は放電検出器または、接触検出器３３
を拡大した図である。堆積膜厚調整板１９上に、帯状部
材１４の幅方向（移動方向と直角方向）、および長手方
向に大きくひとつの検出器３３を設けている。検出器３
３には、接地されている堆積膜厚調整板１９に対して直
流電圧が印加されるので、絶縁碍子３４により、堆積膜
厚調整板１９との絶縁が計られている。図３は帯状部材
１４の幅方向に３列に分割して放電検出器または、接触
検出器３３を設置した堆積膜厚調整板１９である。異常
放電発生位置に対する検出解像度を、図２の検出器より
もあげることができる。同様にして、帯状部材の接触位
置に対する検出解像度も向上する。A DC voltage of several volts is applied to the discharge detector and the contact detector to the grounded belt-shaped member, the deposited film forming chamber member and the gas gate member. Therefore, the discharge detector is insulated from the peripheral members. A voltmeter is connected to the contact detector, and when the belt-shaped member contacts and the voltage is short-circuited, a signal (one-dot chain line) is output to the sequencer 81 accordingly. When a short circuit is detected, the applied voltage is cut off instantly to prevent damage to the measurement system. An ammeter is connected to the discharge detector and outputs a signal (one-dot chain line) to the sequencer 81 when the detector contacts the discharge and a current flows. Then, the sequencer 81 instructs the magnet roller drive system to adjust the clearance between the magnet roller and the deposited film forming chamber (dotted line).
Is issued. FIG. 2 shows a discharge detector or a contact detector 33.
It is the figure which expanded. One detector 33 is provided on the deposited film thickness adjusting plate 19 in the width direction (direction perpendicular to the moving direction) and the longitudinal direction of the belt-shaped member 14. Detector 3
Since a DC voltage is applied to the grounded deposited film thickness adjusting plate 19, the insulator 3 is insulated from the deposited film thickness adjusting plate 19 by the insulator 34. FIG. 3 shows the deposited film thickness adjusting plate 19 in which the discharge detector or the contact detector 33 is installed by dividing the strip-shaped member 14 into three rows in the width direction. The detection resolution for the abnormal discharge occurrence position can be higher than that of the detector of FIG. Similarly, the detection resolution for the contact position of the strip-shaped member is also improved.
【００１５】図４に本発明の帯状部材と堆積膜形成チャ
ンバー部材とのクリアランスを調整する機構を示す。こ
の図をもとにして、帯状部材が堆積膜厚調整板１９に接
触した状況を想定して、接触の解消のためのクリアラン
スの調整動作を説明する。図４において、４１、４２は
マグネットローラー支持部、４３はマグネットローラー
を滑らかに回転させるためのベアリング、４４はマグネ
ットローラーを支持するマアグネットローラー支持板、
４５はマグネットローラーと堆積膜厚調整板１９とのク
リアランスを調整するためのクリアランス調整用駆動
軸、４６は駆動動力源（モーター等）、４８はマグネッ
トローラー上限位置ストッパー、５１はマグネットロー
ラー下限位置ストッパー、４７はマグネットローラーの
チャンバー固定部、４９は駆動伝達点である。磁性体の
帯状部材１４は、マグネットローラー１７に支持され
て、堆積膜厚調整板１９との間に数ミリのクリアランス
を隔てて紙面裏方向に移動している。帯状部材１４の幅
方向紙面右端が変形して、堆積膜厚調整板１９に設置さ
れた帯状部材接触検出器３３に接触した。一番右側の接
触検出器３３に印加されていた直流電圧２（Ｖ）が短絡
し、その信号を機能性堆積膜装置の制御を司るシーケン
サーが受けて、帯状部材１４と堆積膜厚調整板１９のク
リアランスを広げるように、接触を検知した接触検出器
３３に近いマグネットローラー１７の高さ調整機構に指
令信号を出した。マグネットローラー１７の右側があが
るにつれて、帯状部材１４がマグネットローラー１７に
吸いつけられながら持ち上がり、堆積膜厚調整板１９と
の接触が解消された。FIG. 4 shows a mechanism for adjusting the clearance between the belt-shaped member of the present invention and the deposited film forming chamber member. Based on this figure, assuming the situation where the strip-shaped member contacts the deposited film thickness adjusting plate 19, the clearance adjusting operation for eliminating the contact will be described. In FIG. 4, 41 and 42 are magnet roller support portions, 43 is a bearing for smoothly rotating the magnet roller, 44 is a magnet roller support plate that supports the magnet roller,
45 is a clearance adjusting drive shaft for adjusting the clearance between the magnet roller and the deposited film thickness adjusting plate 19, 46 is a driving power source (motor etc.), 48 is a magnet roller upper limit position stopper, and 51 is a magnet roller lower limit position stopper. Reference numeral 47 is a chamber fixing portion of the magnet roller, and 49 is a drive transmission point. The magnetic belt-shaped member 14 is supported by the magnet roller 17 and is moved in the back direction of the drawing with a clearance of several millimeters from the deposited film thickness adjusting plate 19. The right end of the belt-shaped member 14 in the width direction is deformed and comes into contact with the belt-shaped member contact detector 33 installed on the deposited film thickness adjusting plate 19. The DC voltage 2 (V) applied to the rightmost contact detector 33 is short-circuited, and the signal is received by the sequencer that controls the functional deposited film device, and the strip-shaped member 14 and the deposited film thickness adjusting plate 19 are received. A command signal was issued to the height adjusting mechanism of the magnet roller 17 close to the contact detector 33 that detected the contact so as to widen the clearance. As the right side of the magnet roller 17 was raised, the belt-shaped member 14 was lifted while being attracted to the magnet roller 17, and the contact with the deposited film thickness adjusting plate 19 was eliminated.
【００１６】次に図４を用いて、異常な放電状況を想定
して、その解消のためのクリアランス調整動作を述べ
る。帯状部材１４と堆積膜厚調整板１９とのクリアラン
ス（間隙）に、放電が放電炉から延びてきて、堆積膜厚
調整板１９に設置された直流電圧２（Ｖ）を印加した帯
状部材の幅方向に３つに分散された放電検出器３３すべ
てに電流が流れた。この放電検出信号を受けたシーケン
サーが、帯状部材１４と堆積膜厚調整板１９のクリアラ
ンスを狭めるように、放電を検知した接触検出器３３に
近いマグネットローラー１７の高さ調整機構に指令信号
を出した。マグネットローラー１７の左右両側がさがる
につれて、帯状部材１４がマグネットローラー１７に押
し下げられ、帯状部材１４と堆積膜厚調整板１９とのク
リアランスに生じていた放電が解消された。同様にし
て、ランプハウス周辺で発生する放電についても、帯状
部材と天板（帯状部材の幅方向の端部隙間をカバーする
役割）とのクリアランス（隙間）での、放電炉からのＲ
ＦまたはμＷ電力の漏洩、または堆積膜形成用原材料ガ
スの漏洩に関し、マグネットローラーの位置調整によっ
て、該クリアランス（隙間）を小さくすることで、放電
を解消することができる。前記マグネットローラーによ
るクリアランス調整機構は、堆積膜形成チャンバー内の
放電炉周辺および、ガスゲート内のマグネットローラー
に搭載される。Next, with reference to FIG. 4, the clearance adjusting operation for eliminating the abnormal discharge situation will be described. The width of the strip-shaped member, to which a DC voltage of 2 (V) is applied, which is installed in the deposition-thickness adjusting plate 19 as the discharge extends from the discharge furnace into the clearance between the strip-shaped member 14 and the deposition-thickness adjusting plate 19. The current flowed through all of the three discharge detectors 33 dispersed in the direction. Upon receiving this discharge detection signal, the sequencer outputs a command signal to the height adjusting mechanism of the magnet roller 17 near the contact detector 33 that detects the discharge so as to narrow the clearance between the belt-shaped member 14 and the deposited film thickness adjusting plate 19. did. As the left and right sides of the magnet roller 17 were pulled down, the belt-shaped member 14 was pushed down by the magnet roller 17, and the discharge that occurred in the clearance between the belt-shaped member 14 and the deposited film thickness adjusting plate 19 was eliminated. Similarly, regarding the discharge generated around the lamp house, the R from the discharge furnace at the clearance (gap) between the strip-shaped member and the top plate (which plays a role of covering the end gap in the width direction of the strip-shaped member).
Regarding the leakage of F or μW power or the leakage of the deposited film forming raw material gas, the discharge can be eliminated by reducing the clearance by adjusting the position of the magnet roller. The clearance adjusting mechanism using the magnet roller is mounted around the discharge furnace in the deposition film forming chamber and in the magnet roller in the gas gate.
【００１７】[0017]
【実施例】以下に、本発明の実施例を説明する。 ［実施例１］図１、図４に示す本発明を、図５に示すロ
ール・ツー・ロール方式による大面積機能性堆積膜の形
成装置に適用して、図７の断面模式図に示す層構成のア
モルファスシリコンpin型光起電力素子を作製した。該
光起電力素子５２は、ＳＵＳ４３０フェライト系ステン
レス帯状部材５３上に下部電極５４、ｎ型半導体層５
５、ｉ型半導体層５６、ｐ型半導体層５７、透明電極５
８及び集電電極５９をこの順に堆積形成した光起電力素
子である。なお、本光起電力素子では透明電極５８の側
より光の入射が行われることを前提としている。まず、
帯状部材を連続スパッタ装置にセットし、Ａｇ（純度９
９．９９％）電極をターゲットとして用いて４５００Å
のＡｇ薄膜を、また、連続してＺｎＯ（純度９９．９９
９％）電極をターゲットとして用いて１．０μｍのＺｎ
Ｏ薄膜をスパッタ蒸着して、下部電極を形成した。引き
続き、該下部電極５４の形成された帯状部材を図５で示
した連続堆積膜形成装置にセットした。各堆積膜形成チ
ャンバーにおいては、表１に示す堆積膜形成条件でｎ型
ａ−Ｓｉ：Ｈ膜及びｉ型ａ−Ｓｉ：Ｈ膜、ｐ−型μｃ−
Ｓｉ：Ｈ膜の形成を行った。Embodiments of the present invention will be described below. [Embodiment 1] The layer shown in the schematic sectional view of FIG. 7 is obtained by applying the present invention shown in FIGS. 1 and 4 to the apparatus for forming a large area functional deposited film by the roll-to-roll method shown in FIG. An amorphous silicon pin type photovoltaic device having a constitution was produced. The photovoltaic element 52 includes a lower electrode 54, an n-type semiconductor layer 5 on a SUS430 ferrite stainless steel strip member 53.
5, i-type semiconductor layer 56, p-type semiconductor layer 57, transparent electrode 5
8 and the collector electrode 59 are deposited in this order to form a photovoltaic element. The photovoltaic element is premised on that light is incident from the transparent electrode 58 side. First,
The strip-shaped member was set in a continuous sputtering device, and Ag (purity 9
4.99Å using the electrode as a target
Ag thin film of ZnO (purity 99.99) continuously.
9%) Zn of 1.0 μm using the electrode as a target
An O thin film was sputter-deposited to form a lower electrode. Subsequently, the strip-shaped member on which the lower electrode 54 was formed was set in the continuous deposited film forming apparatus shown in FIG. In each deposited film forming chamber, the n-type a-Si: H film, the i-type a-Si: H film, and the p-type μc-under the deposited film formation conditions shown in Table 1.
A Si: H film was formed.
【００１８】[0018]
【表１】 まず、各々の堆積膜形成チャンバー内の放電炉でＲＦ放
電を生起させ、放電等が安定したところで帯状部材を搬
送スピード６０ｃｍ／ｍｉｎで搬送させ、連続してｎ、
ｉ、ｐ型半導体層を積層形成した。帯状部材の全長にわ
たって半導体層を積層したあと、冷却後取り出し、更
に、連続モジュール化装置にて３５ｃｍ×７０ｃｍの太
陽電池モジュールを連続作製した。作製した太陽電池モ
ジュールについて、ＡＭ１．５（１０００ｍＷ／ｃ
ｍ2）光照射下にて特性評価を行ったところ、光電変換
率で８％以上が得られ、さらにモジュール間の特性のば
らつきは３％以内に納まった。[Table 1] First, an RF discharge is generated in a discharge furnace in each deposited film forming chamber, and when the discharge or the like is stabilized, the strip-shaped member is transported at a transport speed of 60 cm / min, and n is continuously fed.
The i and p type semiconductor layers were laminated. After stacking the semiconductor layers over the entire length of the strip-shaped member, it was cooled and taken out, and further a solar cell module having a size of 35 cm × 70 cm was continuously produced by a continuous modularizing device. About the manufactured solar cell module, AM1.5 (1000 mW / c
m 2 ) When the characteristics were evaluated under light irradiation, a photoelectric conversion rate of 8% or more was obtained, and the variation in characteristics between modules was within 3%.
【００１９】［実施例２］本実施例では、図８に示す層
構成の光起電力素子を作製した。図において、光起電力
素子６０は、下部セル６１、中間セル６２、上部セル６
３により構成されている。具体的には、帯状部材６４
に、下部電極６５、ｎ型ａ−Ｓｉ：Ｈ半導体層６６、ｉ
型ａ−Ｓｉ：Ｈ半導体バッファ層６７、ｉ型ａ−ＳｉＧ
ｅ：Ｈ半導体層６８、ｉ型ａ−Ｓｉ：Ｈ半導体バッファ
層６９、ｐ型ａ−Ｓｉ：Ｈ半導体層７０、ｎ型ａ−Ｓ
ｉ：Ｈ半導体層７１、ｉ型ａ−Ｓｉ：Ｈ半導体バッファ
層７２、ｉ型ａ−ＳｉＧｅ：Ｈ半導体層７３、ｉ型ａ−
Ｓｉ：Ｈ半導体バッファ層７４、ｐ型ａ−Ｓｉ：Ｈ半導
体層７５、ｎ型ａ−Ｓｉ：Ｈ半導体層７６、ｉ型ａ−Ｓ
ｉ：Ｈ半導体層７７、ｐ型ａ−Ｓｉ：Ｈ半導体層７８、
透明電極７９、集電電極８０、がこの順に堆積形成され
ている。半導体層の作製にあたっては、本発明を適用し
たロール・ツー・ロール方式連続堆積膜形成装置（不図
示）を使って形成した。堆積膜形成チャンバーは、積層
する半導体層の数だけ設け、ガスゲートを介して繋げ
た。なお、帯状部材としては実施例１で用いたのと同様
の材質及び処理を行ったものを用い、下部セル、中間セ
ル、上部セルの各半導体層を表２に示す堆積膜形成条件
により作製した。モジュール化工程は実施例１と同様の
操作及び方法で行い、太陽電池モジュールを作製した。Example 2 In this example, a photovoltaic element having the layer structure shown in FIG. 8 was produced. In the figure, the photovoltaic element 60 includes a lower cell 61, an intermediate cell 62, and an upper cell 6.
3. Specifically, the belt-shaped member 64
The lower electrode 65, the n-type a-Si: H semiconductor layer 66, i.
Type a-Si: H semiconductor buffer layer 67, i-type a-SiG
e: H semiconductor layer 68, i-type a-Si: H semiconductor buffer layer 69, p-type a-Si: H semiconductor layer 70, n-type a-S
i: H semiconductor layer 71, i-type a-Si: H semiconductor buffer layer 72, i-type a-SiGe: H semiconductor layer 73, i-type a-
Si: H semiconductor buffer layer 74, p-type a-Si: H semiconductor layer 75, n-type a-Si: H semiconductor layer 76, i-type a-S
i: H semiconductor layer 77, p-type a-Si: H semiconductor layer 78,
A transparent electrode 79 and a collector electrode 80 are deposited and formed in this order. The semiconductor layer was formed by using a roll-to-roll system continuous deposition film forming apparatus (not shown) to which the present invention was applied. The deposited film forming chambers were provided in the same number as the number of semiconductor layers to be stacked, and were connected via gas gates. As the band-shaped member, the same material and treatment as used in Example 1 were used, and the semiconductor layers of the lower cell, the intermediate cell, and the upper cell were formed under the deposition film forming conditions shown in Table 2. . The modularization process was performed by the same operation and method as in Example 1 to produce a solar cell module.
【００２０】[0020]
【表２】 作製した太陽電池モジュールについて、ＡＭ１．５（１
０００ｍＷ／ｃｍ2）光照射下にて特性評価を行ったと
ころ、光電変換率で１２％以上が得られ、さらにモジュ
ール間の特性のばらつきは４％以内に納まった。[Table 2] Regarding the manufactured solar cell module, AM1.5 (1
When the characteristics were evaluated under irradiation with light of 000 mW / cm 2 ), a photoelectric conversion rate of 12% or more was obtained, and the variation in characteristics between modules was within 4%.
【００２１】[0021]
【発明の効果】本発明は、以上のように帯状部材を長手
方向に連続的に移動させながら、該帯状部材上に機能性
堆積膜を形成するに当たって、放電炉から外部に拡散も
しくは漏洩する放電を検知し、または、帯状部材の機能
性堆積膜形成側表面が機能性堆積膜形成装置の部材に接
触することを検知し、それに基づき帯状部材の軌道を修
正して該異常な放電、または接触を解消することで、連
続して移動する帯状部材上に形成される機能性堆積膜、
とりわけ光起電力素子の収率を上げることができ、その
諸特性の均一化と向上を図ることが可能となる。As described above, according to the present invention, when the functional deposited film is formed on the strip-shaped member while continuously moving the strip-shaped member in the longitudinal direction, the discharge diffused or leaks from the discharge furnace to the outside. Or detecting that the surface of the strip-shaped member on which the functional deposited film is formed contacts the member of the functional deposited film forming apparatus, and based on that, corrects the trajectory of the strip-shaped member to cause the abnormal discharge or contact. By eliminating the, the functional deposition film formed on the continuously moving strip-shaped member,
In particular, the yield of the photovoltaic element can be increased, and the various characteristics thereof can be made uniform and improved.
【図１】本発明の特徴を最も良く表す高周波プラズマＣ
ＶＤ法による機能性堆積膜形成チャンバーを示した断面
図である。FIG. 1 is a high-frequency plasma C that best represents the features of the present invention.
It is sectional drawing which showed the functional deposition film formation chamber by VD method.
【図２】本発明の放電検出器ないし、帯状部材と堆積膜
形成炉部材との接触検出器を示した図である。FIG. 2 is a view showing a discharge detector of the present invention or a contact detector between a belt-shaped member and a deposited film forming furnace member.
【図３】本発明の別の放電検出器ないし、帯状部材と堆
積膜形成炉部材との接触検出器を示した図である。FIG. 3 is a view showing another discharge detector of the present invention or a contact detector between a belt-shaped member and a deposited film forming furnace member.
【図４】本発明の帯状部材と堆積膜形成炉部材とのクリ
アランスを調整する機構を表した図である。FIG. 4 is a view showing a mechanism for adjusting the clearance between the belt-shaped member and the deposited film forming furnace member of the present invention.
【図５】典型的なロール・ツー・ロール方式による大面
積機能性堆積膜の形成装置を示した図である。FIG. 5 is a view showing an apparatus for forming a large-area functional deposited film by a typical roll-to-roll method.
【図６】図５のなかの高周波プラズマＣＶＤ法による機
能性堆積膜形成炉のひとつの詳細断面図である。6 is a detailed cross-sectional view of one of the functional deposited film forming furnaces by the high frequency plasma CVD method in FIG.
【図７】実施例１に示した光起電力素子の層構成の断面
模式図である。FIG. 7 is a schematic cross-sectional view of the layer structure of the photovoltaic element shown in Example 1.
【図８】実施例２に示した光起電力素子の層構成の断面
模式図である。FIG. 8 is a schematic cross-sectional view of the layer structure of the photovoltaic element shown in Example 2.
１ ロール・ツー・ロール方式大面積機能性堆
積膜形成装置 ２ 帯状部材の繰り出しチャンバー ３、４、５、６、７機能性堆積膜形成チャンバー ８ 帯状部材の巻き取りチャンバー ９ ガスゲート １０ ゲートガス導入手段 １１ 帯状部材の加熱手段（ヒーター） １１ａ 予熱ヒーター １１ｂ 本ヒーター １２ 高周波（ＲＦ）放電炉 １３ マイクロ波（μＷ）放電炉 １４ 帯状部材 １５、１６ ボビン １７ マグネットローラー １８ ランプヒーターハウス １９ 堆積膜厚調整板 ２０ 堆積膜形成用原材料ガス供給手段 ２１ 高周波導入手段 ２２ 排気手段 ２３ 堆積膜形成用原材料ガス加熱手段 ２４ ガスゲートクリアランス（帯状部材とガス
ゲート部材との間隙） ２５ 帯状部材と堆積膜厚調整板のクリアランス ２６ 正常な（理想的な）放電領域 ２７ 放電炉 ２８ 直流電源 ２９ 電流計 ３０ 電圧計 ３１、３３ 放電及び帯状部材接触検出器 ３２、３４、３６、３８、４０絶縁碍子 ３５ 放電検出器 ３７、３９ 帯状部材接触検出器 ４１、４２ マグネットローラー支持部 ４３ ベアリング ４４ マグネットローラー支持板 ４５ クリアランス調整用駆動軸 ４６ 駆動動力源（モーター等） ４７ チャンバー固定部 ４８ マグネットローラー上限位置ストッパー ４９ 駆動伝達点 ５０ 高周波電極（アノード） ５１ マグネットローラー下限位置ストッパー ５２ 光起電力素子 ５３ 帯状部材（基板） ５４ 下部電極 ５５ ｎ型ａ−Ｓｉ：Ｈ半導体層 ５６ ｉ型ａ−Ｓｉ：Ｈ半導体層 ５７ ｐ型ａ−Ｓｉ：Ｈ半導体層 ５８ 透明電極 ５９ 集電電極 ６０ 光起電力素子 ６１ 下部セル ６２ 中間セル ６３ 上部セル ６４ 帯状部材（基板） ６５ 下部電極 ６６ ｎ型ａ−Ｓｉ：Ｈ半導体層 ６７ ｉ型ａ−Ｓｉ：Ｈ半導体バッファ層 ６８ ｉ型ａ−ＳｉＧｅ：Ｈ半導体層 ６９ ｉ型ａ−Ｓｉ：Ｈ半導体バッファ層 ７０ ｐ型ａ−Ｓｉ：Ｈ半導体層 ７１ ｎ型ａ−Ｓｉ：Ｈ半導体層 ７２ ｉ型ａ−Ｓｉ：Ｈ半導体バッファ層 ７３ ｉ型ａ−ＳｉＧｅ：Ｈ半導体層 ７４ ｉ型ａ−Ｓｉ：Ｈ半導体バッファ層 ７５ ｐ型ａ−Ｓｉ：Ｈ半導体層 ７６ ｎ型ａ−Ｓｉ：Ｈ半導体層 ７７ ｉ型ａ−Ｓｉ：Ｈ半導体層 ７８ ｐ型ａ−Ｓｉ：Ｈ半導体層 ７９ 透明電極 ８０ 集電電極 ８１ シーケンサーDESCRIPTION OF SYMBOLS 1 roll-to-roll type large area functional deposited film forming apparatus 2 feeding chamber for strip-shaped members 3, 4, 5, 6, 7 functional deposited film forming chamber 8 winding chamber for strip-shaped members 9 gas gate 10 gate gas introduction means 11 Band-shaped member heating means (heater) 11a Preheater heater 11b Main heater 12 Radio frequency (RF) discharge furnace 13 Microwave (μW) discharge furnace 14 Band-shaped members 15, 16 Bobbins 17 Magnet roller 18 Lamp heater house 19 Deposited film thickness adjusting plate 20 Raw material gas supply means for forming deposited film 21 High frequency introducing means 22 Exhaust means 23 Raw material gas heating means for forming deposited film 24 Gas gate clearance (gap between band-shaped member and gas gate member) 25 Clearance between band-shaped member and deposited film thickness adjusting plate 26 Normal (ideal) discharge area 2 Discharge furnace 28 DC power supply 29 Ammeter 30 Voltmeter 31, 33 Discharge and strip member contact detector 32, 34, 36, 38, 40 Insulator 35 Discharge detector 37, 39 Strip member contact detector 41, 42 Magnet roller support Part 43 Bearing 44 Magnet roller support plate 45 Clearance adjusting drive shaft 46 Drive power source (motor etc.) 47 Chamber fixing part 48 Magnet roller upper limit position stopper 49 Drive transmission point 50 High frequency electrode (anode) 51 Magnet roller lower limit position stopper 52 Light Electromotive element 53 Strip-shaped member (substrate) 54 Lower electrode 55 n-type a-Si: H semiconductor layer 56 i-type a-Si: H semiconductor layer 57 p-type a-Si: H semiconductor layer 58 Transparent electrode 59 Current collecting electrode 60 Photovoltaic device 61 Lower cell 62 Intermediate cell 63 Above Cell 64 Band-shaped member (substrate) 65 Lower electrode 66 n-type a-Si: H semiconductor layer 67 i-type a-Si: H semiconductor buffer layer 68 i-type a-SiGe: H semiconductor layer 69 i-type a-Si: H semiconductor Buffer layer 70 p-type a-Si: H semiconductor layer 71 n-type a-Si: H semiconductor layer 72 i-type a-Si: H semiconductor buffer layer 73 i-type a-SiGe: H semiconductor layer 74 i-type a-Si: H semiconductor buffer layer 75 p-type a-Si: H semiconductor layer 76 n-type a-Si: H semiconductor layer 77 i-type a-Si: H semiconductor layer 78 p-type a-Si: H semiconductor layer 79 transparent electrode 80 current collector Electrode 81 Sequencer
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/285 Ｈ０１Ｌ 21/285 Ｃ 31/04 31/04 Ｔ (72)発明者 幸田 勇蔵 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 西元 智紀 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 矢島 孝博 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 藤岡 靖 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 金井 正博 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内Continuation of front page (51) Int.Cl. 6 Identification number Reference number within the agency FI Technical indication location H01L 21/285 H01L 21/285 C 31/04 31/04 T (72) Inventor Yuzo Koda Shimomaruko Ota-ku, Tokyo 3-30-2 Canon Inc. (72) Inventor Satoshi Nishimoto 3-30-2 Shimomaruko Ota-ku, Tokyo Canon Inc. (72) Inventor Takahiro Yajima 3-30 Shimomaruko, Ota-ku, Tokyo No. 2 Canon Inc. (72) Inventor Yasushi Fujioka 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Masahiro Kanai 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Within the corporation
Claims (19)
ながら、ガスゲートにより結ばれた複数の堆積膜形成チ
ャンバーを通過させ、該堆積膜形成チャンバー内の、該
帯状部材とほかの導電性部材に囲まれ、高周波電力によ
り原料ガスを分解プラズマ化する放電炉にて、該帯状部
材上に機能性堆積膜を形成する機能性堆積膜の連続的形
成方法において、前記堆積膜形成チャンバーの放電炉か
ら外部に拡散もしくは漏洩する異常放電を、堆積膜形成
チャンバーを構成する部材の一部に電圧を印加して該電
圧印加部分（以下放電検出器）と接地電位との間を流れ
る電流により検知し、該検知による信号に基づいて帯状
部材の移動する軌道を調整することによって、前記異常
放電を解消するようにしたことを特徴とする機能性堆積
膜の連続的形成方法。1. The strip-shaped member and other conductive members in the deposition film forming chamber are passed through a plurality of deposition film forming chambers connected by a gas gate while continuously moving the strip-shaped member in the longitudinal direction. In a discharge furnace for forming a functional deposited film on the strip-shaped member in a discharge furnace that is surrounded by and is used to decompose a raw material gas into plasma by high-frequency power, a discharge furnace of the deposited film forming chamber is provided. An abnormal discharge that diffuses or leaks from the outside to the outside is detected by applying a voltage to a part of the member forming the deposited film formation chamber and flowing a current between the voltage applied part (hereinafter, discharge detector) and the ground potential. A method for continuously forming a functional deposited film, characterized in that the abnormal discharge is eliminated by adjusting the trajectory of the strip-shaped member based on a signal from the detection. .
した、該帯状部材が放電にさらされる領域を調整する為
の放電炉の堆積膜厚調整板の表面に設置された放電検出
器により検知されることを特徴とする請求項１に記載の
機能性堆積膜の連続的形成方法。2. The electric current is detected by a discharge detector installed on a surface of a deposited film thickness adjusting plate of a discharge furnace, which is opposed to the strip-shaped member and adjusts a region where the strip-shaped member is exposed to a discharge. The method for continuously forming a functional deposited film according to claim 1, wherein the method is detected.
ンバーの前記帯状部材と対峙して該帯状部材を加熱する
ためのランプヒーターを収納するランプハウス表面に設
置された放電検出器により検知されることを特徴とする
請求項１に記載の機能性堆積膜の連続的形成方法。3. The detection of the electric current is detected by a discharge detector installed on the surface of a lamp house that houses a lamp heater for heating the strip-shaped member facing the strip-shaped member of the deposited film forming chamber. The method for continuously forming a functional deposited film according to claim 1, wherein the functional deposited film is continuously formed.
複数個分散させて構成されていることを特徴とする請求
項２または請求項３に記載の機能性堆積膜の連続的形成
方法。4. The method for continuously forming a functional deposited film according to claim 2, wherein the discharge detectors are formed by dispersing a plurality of discharge detectors in the width direction of the belt-shaped member. .
ながら、ガスゲートにより結ばれた複数の堆積膜形成チ
ャンバーを通過させ、該堆積膜形成チャンバー内の、該
帯状部材とほかの導電性部材に囲まれ、高周波電力によ
り原料ガスを分解プラズマ化する放電炉にて、該帯状部
材上に機能性堆積膜を形成する機能性堆積膜の連続的形
成方法において、前記帯状部材の堆積膜形成側表面が堆
積膜形成チャンバーの部材に接触することを、該帯状部
材と対峠する堆積膜形成チャンバー部材の一部分に電圧
を印加して（以下電圧印加点を接触検出器と称す）該電
圧の短絡により検知し、該短絡による信号に基づいて帯
状部材の移動する軌道を調整することによって、前記接
触を解消するようにしたことを特徴とする機能性堆積膜
の連続的形成方法。5. The belt-shaped member and other conductive members in the deposited film forming chamber are passed through a plurality of deposited film forming chambers connected by a gas gate while continuously moving the belt-shaped member in the longitudinal direction. In the discharge furnace that decomposes the raw material gas into plasma by high-frequency power, the method for continuously forming a functional deposited film on the strip-shaped member in the method for continuously forming a functional deposited film on the deposition film formation side of the strip-shaped member. When the surface is in contact with the member of the deposited film forming chamber, a voltage is applied to a part of the member of the deposited film forming chamber that faces the belt-shaped member (hereinafter, the voltage application point is referred to as a contact detector) and the voltage is short-circuited. The contact is eliminated by adjusting the moving path of the belt-shaped member based on the signal due to the short circuit, and the continuous formation method of the functional deposited film is characterized.
と対峙するガスゲートの部材表面に設置された接触検出
器により検知されることを特徴とする請求項５に記載の
機能性堆積膜の連続的形成方法。6. The functional deposited film according to claim 5, wherein the short circuit of the voltage is detected by a contact detector provided on a surface of a member of the gas gate facing the belt-shaped member. Continuous formation method.
と対峙する堆積膜厚調整板の表面に設置された放電検出
器兼接触検出器により検知されることを特徴とする請求
項５に記載の機能性堆積膜の連続的形成方法。7. The detection of the short circuit of the voltage is detected by a discharge detector and a contact detector installed on the surface of the deposited film thickness adjusting plate facing the strip-shaped member. A method for continuously forming a functionally deposited film as described.
複数個分散させて構成されていることを特徴とする請求
項６または請求項７に記載の機能性堆積膜の連続的形成
方法。8. The method for continuously forming a functional deposited film according to claim 6, wherein a plurality of the contact detectors are dispersed in the width direction of the belt-shaped member. .
圧であることを特徴とする請求項１〜請求項８のいずれ
か１項に記載の機能性堆積膜の連続的形成方法。9. The method for continuously forming a functional deposited film according to claim 1, wherein the applied voltage is a DC voltage of about several volts.
は、該磁性体である帯状部材が堆積膜形成チャンバーを
移動する軌道を固定するマグネットローラーと該帯状部
材と対峙する堆積膜厚調整板との間隙を、該マグネット
ローラーの両端の設置高さを独立して変えることによっ
て行うようにしたことを特徴とする請求項１〜請求項９
のいずれか１項に記載の機能性堆積膜の連続的形成方
法。10. The adjustment of the trajectory of the strip-shaped member is performed by a magnet roller that fixes the trajectory of the strip-shaped member that is the magnetic body that moves in the deposition film forming chamber, and a deposited film thickness adjusting plate that faces the strip-shaped member. 10. The gap is defined by independently changing the installation heights of both ends of the magnet roller.
The method for continuously forming a functional deposited film according to any one of 1.
せながら、ガスゲートにより結ばれた複数の堆積膜形成
チャンバーを通過させ、該堆積膜形成チャンバー内の、
該帯状部材とほかの導電性部材に囲まれ、高周波電力に
より原料ガスを分解プラズマ化する放電炉にて、該帯状
部材上に機能性堆積膜を形成する機能性堆積膜の連続的
形成装置において、前記堆積膜形成チャンバーの放電炉
から外部に拡散もしくは漏洩する異常放電を、堆積膜形
成チャンバーの部材の一部に電圧を印加して該電圧印加
部分（以下放電検出器）と接地電位との間を流れる電流
により検知する手段と、該検知手段による信号に基づい
て該帯状部材の移動する軌道を調整する手段とを備え、
前記異常放電を解消するようにしたことを特徴とする機
能性堆積膜の連続的形成装置。11. A belt-shaped member is continuously moved in a longitudinal direction while passing through a plurality of deposition film forming chambers connected by a gas gate,
In a continuous deposition apparatus for forming a functional deposited film on the strip-shaped member in a discharge furnace which is surrounded by the strip-shaped member and another conductive member and decomposes a raw material gas into plasma by high frequency power The abnormal electric discharge that diffuses or leaks from the discharge furnace of the deposited film forming chamber to the outside is applied to a part of the member of the deposited film forming chamber by applying a voltage to the voltage applied part (hereinafter, discharge detector) and the ground potential. A means for detecting with a current flowing between the means, and means for adjusting a moving trajectory of the belt-shaped member based on a signal from the detecting means,
An apparatus for continuously forming a functional deposited film, characterized in that the abnormal discharge is eliminated.
と対峙する堆積膜厚調整板の表面に設置された放電検出
器により構成されていることを特徴とする請求項９に記
載の機能性堆積膜の連続的形成装置。12. The functionality according to claim 9, wherein the current detecting means is constituted by a discharge detector installed on the surface of the deposited film thickness adjusting plate facing the belt-shaped member. Equipment for continuous formation of deposited films.
成チャンバーのランプハウス表面に設置された放電検出
器により構成されていることを特徴とする請求項９に記
載の機能性堆積膜の連続的形成装置。13. The continuous functional deposited film according to claim 9, wherein the current detecting means is constituted by a discharge detector installed on the surface of the lamp house of the deposited film forming chamber. Forming device.
電位印加点を帯状部材の幅方向に複数個分散させて構成
されていることを特徴とする請求項１２または請求項１
３に記載の機能性堆積膜の連続的形成装置。14. The discharge detector according to claim 12, wherein a plurality of potential application points for the strip-shaped member are dispersed in the width direction of the strip-shaped member.
The continuous deposition apparatus for functionally deposited film as described in 3 above.
ながら、ガスゲートにより結ばれた複数の堆積膜形成チ
ャンバーを通過させ、該堆積膜形成チャンバー内の、該
帯状部材とほかの導電性部材に囲まれ、高周波電力によ
り原料ガスを分解プラズマ化する放電炉にて、該帯状部
材上に機能性堆積膜を形成する機能性堆積膜の連続的形
成装置において、前記帯状部材の堆積膜形成側表面が堆
積膜形成チャンバーの部材に接触することを、該帯状部
材と対峠する堆積膜形成チャンバー部材の一部分に電圧
を印加して（以下電圧印加点を接触検出器と称す）該電
圧の短絡により検知する手段と、該短絡による信号に基
づいて帯状部材の移動する軌道を調整する手段を備え、
前記接触を解消するようにしたことを特徴とする機能性
堆積膜の連続的形成装置。15. The belt-shaped member and other conductive members in the deposition film forming chamber are passed through a plurality of deposition film forming chambers connected by a gas gate while continuously moving the belt-shaped member in the longitudinal direction. In a discharge furnace in which a raw material gas is decomposed into plasma by high-frequency power, a functional deposited film is continuously formed on the belt-shaped member, and a deposition film forming side of the belt-shaped member is formed. When the surface is in contact with the member of the deposited film forming chamber, a voltage is applied to a part of the member of the deposited film forming chamber that faces the belt-shaped member (hereinafter, the voltage application point is referred to as a contact detector) and the voltage is short-circuited. And means for adjusting the moving path of the belt-shaped member based on the signal due to the short circuit,
An apparatus for continuously forming a functional deposited film, characterized in that the contact is eliminated.
部材と対峙するガスゲートの部材表面に設置された接触
検出器により構成されていることを特徴とする請求項１
５に記載の機能性堆積膜の連続的形成装置。16. The contact detection means is constituted by a contact detector installed on the surface of the member of the gas gate facing the belt-shaped member.
5. The apparatus for continuously forming a functional deposited film according to item 5.
部材と対峙する堆積膜厚調整板の表面に設置された放電
検出器兼接触検出器により構成されていることを特徴と
する請求項１５に記載の機能性堆積膜の連続的形成装
置。17. The means for detecting the short circuit is configured by a discharge detector and a contact detector installed on the surface of the deposited film thickness adjusting plate facing the belt-shaped member. An apparatus for continuously forming a functionally deposited film as described in 1.
電位印加点を帯状部材の幅方向に複数個分散させて構成
されていることを特徴とする請求項１６または請求項１
７に記載の機能性堆積膜の連続的形成装置。18. The contact detector according to claim 16, wherein a plurality of potential application points on the strip-shaped member are dispersed in the width direction of the strip-shaped member.
7. The apparatus for continuously forming a functional deposited film according to 7.
る手段は、磁性体である帯状部材が堆積膜形成チャンバ
ーを移動する軌道を固定するマグネットローラーと、該
帯状部材と対峙する堆積膜厚調整板に対する該マグネッ
トローラーの両端の設置高さ位置を独立して調整可能と
したマグネットローラーの高さ調整手段とにより構成さ
れていることを特徴とする請求項１１〜請求項１８のい
ずれか１項に記載の機能性堆積膜の連続的形成装置。19. The means for adjusting the orbit of movement of the belt-shaped member includes a magnet roller for fixing the orbit of movement of the belt-shaped member, which is a magnetic material, in the deposition film forming chamber, and a deposited film thickness adjustment that faces the belt-shaped member. 19. The height adjusting means of the magnet roller capable of independently adjusting the installation height positions of both ends of the magnet roller with respect to the plate, and the height adjusting means of any one of claims 11 to 18. An apparatus for continuously forming a functionally deposited film as described in 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8023197A JPH09199430A (en) | 1996-01-17 | 1996-01-17 | Method and apparatus for continuously forming functional deposited film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8023197A JPH09199430A (en) | 1996-01-17 | 1996-01-17 | Method and apparatus for continuously forming functional deposited film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09199430A true JPH09199430A (en) | 1997-07-31 |
Family
ID=12103953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8023197A Pending JPH09199430A (en) | 1996-01-17 | 1996-01-17 | Method and apparatus for continuously forming functional deposited film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09199430A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110241397A (en) * | 2019-07-24 | 2019-09-17 | 合肥百思新材料研究院有限公司 | A kind of compound CVD equipment of horizontal multi-layer magnetic control film coating and its working method |
-
1996
- 1996-01-17 JP JP8023197A patent/JPH09199430A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110241397A (en) * | 2019-07-24 | 2019-09-17 | 合肥百思新材料研究院有限公司 | A kind of compound CVD equipment of horizontal multi-layer magnetic control film coating and its working method |
| CN110241397B (en) * | 2019-07-24 | 2023-06-23 | 安徽贝意克设备技术有限公司 | Horizontal multilayer magnetic control coating composite CVD equipment and working method thereof |
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