JPH09232632A - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simultaneously form a p-side electrode and an n-side electrode in the same condition by a method wherein the p-side electrode and the n-side electrode, formed on a p-type layer and an n-type layer, are constituted by the same metal single substance, and they are formed by the same process. SOLUTION: A P-N junction wafer, on which an N-type layer 12 consisting of n-GaN, and a P-type layer 13 consisting of p-GaN, are prepared on an insulative sapphire substrate 11 using an organic metal vapor growth method and the like. Then, the N-type layer 12 is exposed from a part of the P-type layer 13 by selectively etching the P-N junction wafer. A resist is applied to the surface of the wafer, a mask pattern 21 is formed, a metal layer 22 is formed by laminating Ni, Ti and Au on the surface of the pattern 21, and the mask pattern 21 is removed. As a result, P and N side electrodes 14 and 15 can be formed simultaneously by a lift-off method.

Description

Detailed Description of the Invention

[0001]

The present invention relates to the gallium nitride compound semiconductor _{(In x Ga y Al 1-} xy N: 0 ≦ x ≦ 1,
The present invention relates to a light emitting diode consisting of 0 ≦ y ≦ 1), a semiconductor light emitting device such as a semiconductor laser, and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, as a semiconductor element of this type, there is one shown in FIG. 11, for example. FIG. 11 is a sectional view showing the structure of a conventional gallium nitride-based compound semiconductor light emitting device.

In this semiconductor light emitting device, an n-type gallium nitride compound semiconductor layer (hereinafter simply referred to as an n-type layer) 112 and a p-type gallium nitride compound semiconductor layer (on an insulating sapphire substrate 11). Hereinafter referred to simply as the p-type layer) 1
The p-type layer 11 is formed on the pn junction wafer in which
3 is selectively etched to expose the n-type layer 112, and the p-side electrode 114 is different from the p-type layer 113 and the p-side electrode 114 is different from the p-side electrode 114 in the n-type layer 112.
By forming the mold electrode 115, a pn junction type light emitting device is realized (Applied Phys).
ics Letters, vol. 64, pp. 168
7-1689, March 28, 1994).

The p-side and n-side electrodes are formed on the same surface because the gallium nitride-based compound semiconductor layer is formed on an insulating sapphire substrate. It is characteristic of the device.

12 (a) to 12 (d) and FIG. 13 (e),
11F is a sectional view showing a manufacturing process of the semiconductor light emitting device shown in FIG. 11.

First, as shown in FIG. 12A, n made of n-GaN is formed on an insulating sapphire substrate 111.
A pn junction wafer in which the mold layer 112 and the p-type layer 113 made of p-GaN are stacked is prepared. Next, the pn junction wafer is selectively etched from a part of the p-type layer 113 to expose the n-type layer 112 (FIG. 12).
(B)).

Thereafter, in order to form the n-side electrode 115 by a lift-off method, a mask pattern 121 is formed on the wafer surface, and a Ti / Al layer 115a suitable as an n-side electrode is formed on the surface of the mask pattern 121. It is formed by the vacuum evaporation method (FIG. 12C). And
When the mask pattern 121 is removed, an n-side electrode 115 is obtained on the surface of the n-type layer 112 as shown in FIG.

Further, a mask pattern 122 is formed on the surface of the wafer on which the n-side electrode 115 is formed in order to form the p-side electrode 114 by the lift-off method.
A Ni / Au layer 114a suitable for a p-side electrode is formed on the surface of the mask pattern 122 by vapor deposition (FIG. 12).
(E)). Then, by removing the mask pattern 122, the semiconductor light emitting device having the electrode structure shown in FIG. 11 is obtained as shown in FIG.

As described above, in the conventional semiconductor light emitting device,
The p-side and n-side electrodes 114 and 115 are formed of different electrode materials, respectively, and thereby good ohmic characteristics are obtained, thereby reducing the operating voltage of the element and preventing deterioration of characteristics due to excessive heat generation. It was

[0010]

However, in order to form such an electrode structure made of different electrode materials,
As described above, it is necessary to perform the vapor deposition of the electrode metal and the pattern formation a plurality of times, which makes the manufacturing process long and complicated.
Therefore, there is a problem that not only the manufacturing process takes a long time, but also an initial defect or deterioration due to long-term energization occurs at the time of manufacturing, which deteriorates the yield for obtaining good element characteristics.

The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a semiconductor light emitting device capable of obtaining good device characteristics. Another object of the present invention is to provide a method for manufacturing a semiconductor light emitting device, which simplifies the process of forming electrodes and shortens the manufacturing process.

[0012]

In order to achieve the above object, the semiconductor light emitting device of the first invention is characterized in that a p-type layer and an n-type layer made of a gallium nitride-based compound semiconductor are formed on the same surface side of a substrate. In a semiconductor light emitting device including a mold layer and a p-side electrode and an n-side electrode formed on the p-type layer and the n-type layer, respectively, the p-side electrode and the n-side electrode are made of the same metal simple substance. Alternatively, the electrodes are made of an alloy or a layered structure made of them and are formed in the same step.

According to the semiconductor light emitting device of the first aspect of the present invention, since the same material is used for the p-side and n-side electrodes, the p-side and n-side electrodes can be formed simultaneously under the same conditions. it can. Thus, even if the p-side electrode and the n-side electrode are simultaneously formed at the same time, the device characteristics are not adversely affected and good characteristics can be obtained.

A feature of the semiconductor light emitting element of the second invention is that in the first invention, the p-side electrode and the n-side electrode are formed by stacking at least Ti and Au.

According to the semiconductor light emitting device of the second invention, good ohmic characteristics can be obtained.

A feature of the semiconductor light emitting element of the third invention is that in the first invention, the p-side electrode and the n-side electrode are formed by stacking at least Ni and Au.

According to the semiconductor light emitting device of the third invention, good ohmic characteristics can be obtained.

The semiconductor light emitting device according to the fourth invention is characterized in that, in the first to third inventions, the p-side electrode and the n-side electrode are respectively flip-chip type to the first and second external leads. It is configured to be connected and to extract light from the back side of the substrate to the outside with the face down.

According to the fourth aspect of the invention, since the same electrode is used for the n-side electrode and the p-side electrode, uniform reflection characteristics can be obtained.

A fifth feature of the semiconductor light emitting device is that the p-type layer and the n-type layer are formed on the same surface of the substrate and are made of a gallium nitride-based compound semiconductor, and the p-type layer and the n-type layer are formed on the p-type layer and the n-type layer. In a semiconductor light-emitting device having a p-side electrode and an n-side electrode formed respectively, the p-side electrode and the n-side electrode are simple substances or composites of the same conductive material, or a layered structure made of them. That is, the transparent electrode is formed and formed in the same step.

According to the fifth aspect of the invention, the p-type electrode and the n-type
Since the side electrode is a translucent electrode, it is possible to extract light more effectively than in the first to third inventions. In particular, by making the n-side electrode also transparent,
The reflected light from the back surface can be extracted more effectively.

A sixth aspect of the method of manufacturing a semiconductor light emitting device is that a p-type layer and an n-type layer made of a gallium nitride compound semiconductor are formed on the same surface side of a substrate, and the p-type layer and the n-type layer are formed.
The same metal element or alloy, on all or part of the mold layer,
Alternatively, an electrode having a layered structure composed of them is simultaneously formed to form a p-side electrode and an n-side electrode, respectively.

According to the sixth aspect of the invention, when manufacturing a semiconductor light emitting device equivalent to the first to third aspects,
The electrode forming process can be simplified and the manufacturing process can be shortened.

A feature of the method for manufacturing a semiconductor light emitting device according to the seventh invention is that a p-type layer and an n-type layer made of a gallium nitride-based compound semiconductor are formed on the same surface side of a substrate, and the p-type layer and the n-type layer are formed.
A transparent electrode composed of a single or composite of the same conductive material, or a layered structure composed of the same is simultaneously formed on the entire surface or a part of the mold layer to form a p-side electrode and an n-side electrode, respectively. To do.

According to the seventh aspect of the invention, when manufacturing a semiconductor light emitting device equivalent to the fifth aspect of the invention, the electrode forming process can be simplified and the manufacturing process can be shortened.

[0026]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional structural view of a semiconductor light emitting device according to a first embodiment of the present invention.

In this semiconductor light emitting device, n made of a gallium nitride compound semiconductor is formed on an insulating sapphire substrate 11.
In a pn junction wafer in which the mold layer 12 and the p-type layer 13 are laminated, on the surface of the p-type layer 13 and the n-type layer 12,
A p-side electrode 14 and an n-side electrode 15 made of the same metal are formed, respectively.

Here, the n-side electrode 15 is, as in the conventional case,
By selectively etching a part of the p-type layer 13 of the pn junction wafer to expose the n-type layer 12,
It is formed on the surface of the mold layer 12.

In order to obtain better ohmic characteristics on both the p-side and the n-side, the electrode materials for the p-side electrode 14 and the n-side electrode 15 are Ni (nickel) and Ti (titanium) in this embodiment. And an alloy in which Au (gold) is laminated is used. However, as the electrode material, Au, Pd
(Paradium), Ti, Pt (platinum), Mo (molybdenum), Cr (chromium), Al (aluminum), C
o (Cobalt), Rh (Rhodium), Ir (Iridium), Mn (Manganese), V (Vanadium), Sc
(Scandium), Mg (magnesium), Zr
A single metal such as (zirconium), an alloy composed of these metals, or a layered structure composed of these metals or alloys may be used. For example, good ohmic characteristics can be obtained even with an alloy in which Ni and Au are laminated or an alloy in which Ti and Au are mirror layers.

In the semiconductor light emitting device having the above structure, when a predetermined voltage is applied between the p-side electrode 14 and the n-side electrode 15, holes from the p-side electrode 14 side and electrons from the n-side electrode 15 side are n
As a result of recombination near the interface between the mold layer 12 and the p-type layer 13,
It emits light.

2A to 2D are cross-sectional views showing the manufacturing steps of the semiconductor light emitting device shown in FIG.

First, as shown in FIG. 1A, a p-type is formed by laminating an n-type layer 12 made of n-GaN and a p-type layer 13 made of p-GaN on an insulating sapphire substrate 11.
An n-junction wafer is prepared by using a metal organic chemical vapor deposition method or the like. Next, the pn junction wafer is selectively etched from a part of the p-type layer 13 to expose the n-type layer 12 as in the conventional case (FIG. 2B).

Thereafter, in order to simultaneously form the p-side electrode 14 and the n-side electrode 15 by one lift-off, a resist is applied to the wafer surface to form a mask pattern 21, and the mask pattern 21 is further formed on the surface thereof. A metal layer 22 is formed by sequentially stacking Ni, Ti, and Au by a vacuum vapor deposition method (FIG. 2C).

By removing the mask pattern 21, the semiconductor light emitting device having the electrode structure shown in FIG. 1 is obtained as shown in FIG.

Here, the thicknesses of Ni, Ti, and Au forming the p-side electrode 14 and the n-side electrode 15 are each 0.02 μm.
When m, 0.02 μm, and 0.5 μm, the operating voltage at 20 mA of this embodiment is 3.8 V. This value shows that an operating voltage (3.6 V) almost equal to that of the conventional semiconductor light emitting device (FIG. 11) is obtained by the electrode structure according to the present embodiment.

In order to obtain a low operating voltage, as shown in the graph of FIG. 3, among Ni, Ti and Au, Ni and Ti are selected.
It is desirable that the thickness of the film be in the range of 0.001 to 0.5 μm. This is because if the thickness is less than 0.001 μm, the adhesion is poor and the electrode is easily peeled off, and if it is more than 0.5 μm, the p-side or n-side contact resistance is high and the operating voltage is high. Is. A more desirable range is 0.005 to 0.1
By setting the thickness to μm, a practical device having a low operating voltage can be obtained.

As described above, in this embodiment, the p-side electrode 1
Since the same material is used for the 4 and n-side electrodes 15, the p-side electrode 14 and the n-side electrode 15 can be simultaneously deposited under the same conditions. Even if they are simultaneously formed in this way, the device characteristics are not adversely affected and good characteristics can be obtained.

Therefore, the element forming process is greatly simplified, the manufacturing time is shortened, and a complicated manufacturing process is not required, so that the occurrence of initial defects and the deterioration due to long-term energization can be suppressed. .

FIG. 4 is a sectional structural view of a semiconductor light emitting device (single hetero structure) according to the second embodiment of the present invention.

In this semiconductor light emitting device, an n-type layer 32 made of n-GaN is provided on an insulating sapphire substrate 31.
A single heterostructure wafer in which a p-type layer 33 made of p-GaAlN and a p-type layer 34 made of p-GaN are laminated is selectively etched from a part of the p-type layer 34 to form the n-type layer 32. A p-side electrode 35 is formed for the p-type layer 34 and an n-type electrode 36 made of the same electrode material as the p-side electrode 35 is formed for the n-type layer 32 by exposing.

The electrode material of the p-side electrode 35 and the n-side electrode 36 is, for example, Ni as in the first embodiment.
The method of manufacturing this semiconductor light emitting device using an alloy in which Ti and Au are laminated is the same as that shown in FIG. 2 above, except that the wafer used has a single hetero structure.

Also in this embodiment, the same effect as that of the first embodiment can be obtained.

FIG. 5 is a sectional structural view of a semiconductor light emitting device (double hetero structure) according to the third embodiment of the present invention.

This semiconductor light emitting device comprises an n-type layer 42 made of n-GaN on an insulating sapphire substrate 41,
An active layer 43 made of a gallium nitride-based compound semiconductor;
A double heterostructure wafer in which a p-type layer 44 made of -GaN is laminated is selectively etched from a part of the p-type layer 44 to expose the n-type layer 42. For the p-side electrode 45, an n-type electrode 46 made of the same electrode material as the p-side electrode 45 is formed for the n-type layer 42.

The electrode material of the p-side electrode 45 and the n-side electrode 46 is, for example, Ni as in the first embodiment.
The method of manufacturing this semiconductor light emitting device using an alloy in which Ti and Au are laminated is the same as that shown in FIG. 2, except that the wafer used has a double hetero structure.

Also in this embodiment, the same effect as in the first embodiment can be obtained.

FIG. 6 is a sectional structural view of a semiconductor light emitting device (semiconductor laser) according to the fourth embodiment of the present invention.

This semiconductor light emitting device is constructed as a semiconductor laser, and n-type is formed on an insulating sapphire substrate 51.
An n-type layer 52 made of GaN, an active layer 53 made of a gallium nitride-based compound semiconductor, and a p layer made of p-GaAlN.
With respect to the wafer in which the mold layer 54 and the p-type layer 56 in which the n-type region 55 is partially formed are stacked, the n-type layer 52 is exposed by selectively etching from a part of the p-type layer 56, A p-side electrode 57 for the p-type layer 56 and an n-type electrode 5 made of the same electrode material as the p-side electrode 57 for the n-type layer 52.
8 are formed.

The electrode material for the p-side electrode 57 and the n-side electrode 58 is, for example, Ni as in the first embodiment.
Using a laminated alloy of Ti and Au, the manufacturing method of this semiconductor light emitting device is different only in the structure of the wafer used,
It is similar to that shown in FIG.

Also in this embodiment, the same effect as that of the first embodiment can be obtained.

FIG. 7 is a sectional structural view of a semiconductor light emitting device (double hetero structure) according to the fifth embodiment of the present invention.

In this semiconductor light emitting device, an n-InGaAlN layer 62 and InG are formed on an insulating sapphire substrate 61.
For a double heterostructure wafer in which an active layer 63 made of aAlN and a p-InGaAlN layer 64 are laminated,
The n-type layer 62 is selectively etched from a part of the mold layer 64.
To expose the p-side electrode 65 to the p-type layer 64,
An n-type electrode 66 made of the same electrode material as the p-side electrode 65 is formed on the mold layer 62.

Here, the p-side electrode 65 and the n-type electrode 66
Is composed of a translucent electrode that transmits the light emitted from the active layer 63. The transparent electrode material is, for example, a simple metal having a thickness of about 0.001 μm to 0.05 μm, an alloy composed of these metals, a layer structure made of these metals or an alloy, or an oxide oxide. A transparent conductive oxide film such as jum tin (ITO) is used.

Further, a p-side pedestal electrode 67 is provided so as to be stacked from the upper surface of the p-type layer 64 to a part of the upper surface of the p-side electrode 65,
Further, an n-side pedestal electrode 68 is provided so as to be stacked from the upper surface of the n-type layer 62 to a part of the upper surface of the n-side electrode 66. As the electrode material of the p-side pedestal electrode 67 and the n-side pedestal electrode 68,
For example, a laminated film of Ti and Au or a laminated film of Ni and Au is used.

8A and 8B are plan structural views of the semiconductor light emitting device (double heterostructure) of the present embodiment described above. While the p-side pedestal electrode 67 and the n-side pedestal electrode 68 are arranged on the horizontal center line of the rectangular chip in the example of FIG. 7A, the right corner of the rectangular chip is arranged in the example of FIG. It is located closer to. In the example of FIG. 8B, compared with the arrangement example of FIG. 8A, a sufficient area for the bonding tool is secured especially when wire bonding is performed on the n-side pedestal electrode 68, which causes a problem. It is possible to easily perform bonding without using.

The method of manufacturing this semiconductor light emitting device is the same method as that shown in the first embodiment using the above-mentioned double heterostructure wafer, and is the p-type layer 64 and the n-type layer 62.
On the upper surface of each of the transparent p-side electrode 65 and n-type electrode 6
6 is formed, and the p-side pedestal electrode 67 and the n-side pedestal electrode 68 are simultaneously formed by the vacuum deposition method using the same material as described above, for example.

In this embodiment, the same effect as that of the first embodiment can be obtained, and the p-type electrode 65 and the n-side electrode 66 are made transparent, so that the first to fourth embodiments are performed. Light emitted from the active layer can be more effectively extracted as compared with the form. In particular, since the n-side electrode 66 is also transparent, the reflected light from the back surface can be more effectively extracted, and the light extraction efficiency to the outside of the chip can be further improved.

In the present embodiment, the invention in which the p-side electrode and the n-type electrode are composed of translucent electrodes has been described by taking the double hetero structure as an example. However, the invention is not limited to the double hetero structure and a single hetero structure or The present invention can be applied to a homostructure or a semiconductor laser.

An example of mounting the semiconductor light emitting device shown in each of the above embodiments will be described below with reference to FIGS. 9 and 10.
Note that the semiconductor light emitting element is divided into individual chips by dicing.

FIG. 9 is a sectional structural view of an LED product on which the semiconductor light emitting element of the present invention is mounted, showing a type in which light is extracted from the main surface side of the chip to the outside. Note that FIG. 9 shows an example in which the LED chip having the double hetero structure described in the fifth embodiment (FIG. 7) is mounted, but the structure as shown in the other first to fourth embodiments is shown. LED
The same applies to chips.

In FIG. 9, first, the LED chip 70 of the fifth embodiment is fixed to the chip mounting portion of the lead frame 71. Then, the n-side pedestal electrode 68 of the chip 70 and the lead frame 71 are bonded via a bonding wire (for example, Au wire) 72, and the p-side pedestal electrode 67 and the lead frame 73 are bonded by bonding wire (for example, Au wire). It joins via 74.

After that, the LED chip 70 in the above state is set in a mold, the heat-melted light-shielding resin is injected under pressure from the mold gate portion, cooled and solidified in the mold, If the entire LED chip is sealed so as to be surrounded by the lens-shaped light-shielding resin 75, the structure as shown in FIG. 9 can be mounted.

In the mounting example of the type in which light is extracted to the outside from the chip main surface side as in this example, particularly, the LED chip (the first side) having a structure in which the p-side electrode and the n-type electrode are composed of transparent electrodes is used. By using the fifth embodiment, it is possible to realize an LED product with higher brightness.

FIG. 10 is a cross-sectional structural view of another LED product on which the semiconductor light emitting device of the present invention is mounted, showing a type in which light is extracted from the back side of the chip to the outside. This LED product is not the case where the LED chip having the structure in which the p-side electrode and the n-type electrode are composed of the translucent electrodes is mounted as shown in the fifth embodiment (FIG. 7), but the first LED product is mounted. ~
It is applied when mounting the LED chip having the structure as shown in the fourth embodiment. LE installed in this LED product
The D chip 80 is, for example, an insulating sapphire substrate 81.
A double heterostructure wafer having an n-InGaAlN layer 82, an active layer 83 made of InGaAlN, and a p-InGaAlN layer 84 stacked thereon is selectively etched from a part of the p-type layer 84 to be n-type. Expose layer 82,
A p-side electrode 85 is formed on the p-type layer 84, and an n-type electrode 86 made of the same electrode material as the p-side electrode 85 is formed on the n-type layer 82. As the electrodes of the p-side electrode 85 and the n-type electrode 86, an alloy in which, for example, Ni, Ti, and Au are laminated is used as in the first embodiment.

The LED chip 80 having such a structure is mounted by a flip chip method. That is, the p-side electrode 85 and the n-type electrode 86 of the chip 80 are welded to the lead frames 93 and 94 using solder (for example, In and PbSn) 91 and 92, respectively, with the face down with the back surface of the sapphire substrate 81 facing upward. Then connect electrically. Then, similarly to the mounting example shown in FIG. 9, if the entire chip is molded with the lens-shaped resin 95, the structure as shown in FIG. 10 can be mounted.

If the LED chips of the above-mentioned first to fourth embodiments (where the n-side electrode and the p-side electrode are not translucent) are mounted in a type in which light is extracted from the back side of the chip as in this example, FIG. Light emission from the active layer can be more effectively extracted as compared with the case of mounting with the above-described mounting type (type in which light is extracted from the chip main surface side) shown in. In particular, since the same electrode is used for the n-side electrode and the p-side electrode, a uniform reflection characteristic can be obtained, and an LED product having excellent light distribution characteristics can be realized.

[0067]

As described in detail above, according to the semiconductor light emitting device of the first invention, the p-side electrode and the n-side electrode are formed of the same metal simple substance or alloy, or a layered structure composed of them. Therefore, it is possible to simplify the electrode forming process, shorten the manufacturing process, and obtain good device characteristics.

According to the semiconductor light-emitting device of the second invention, in the first invention, at least Ti and Au are laminated on the p-side electrode and the n-side electrode, so that good ohmic characteristics are obtained. Can be obtained.

According to the semiconductor light emitting element of the third invention, in the above first invention, at least Ni and Au are laminated on the p-side electrode and the n-side electrode, so that good ohmic characteristics are obtained. Can be obtained.

According to the semiconductor light emitting element of the fourth invention, in the above-mentioned first to third inventions, the p-side electrode and the n-side electrode are respectively flip-chip type to the first and second external leads. Since it is connected and the light is extracted from the back side of the substrate to the outside with the face down, it is possible to realize an LED product having excellent light distribution characteristics.

According to the semiconductor light emitting element of the fifth invention, the p-side electrode and the n-side electrode are composed of the same conductive material alone or in the form of a composite, or are formed in the same step. Since it is a transparent electrode, the light can be extracted more effectively as compared with the first to third inventions, and the light extraction efficiency to the outside of the chip can be further improved.

According to the method for manufacturing a semiconductor light emitting device of the sixth invention, a p-type layer and an n-type layer made of a gallium nitride compound semiconductor are formed on the same surface side of a substrate, and the p-type layer and the n-type layer are formed.
The same metal element or alloy, on all or part of the mold layer,
Alternatively, since electrodes having a layered structure made of them are formed at the same time to form a p-side electrode and an n-side electrode, respectively, the electrode forming process can be simplified and the whole manufacturing process can be shortened. Becomes As a result, not only the manufacturing time is shortened, but also the reproducibility is increased, so that the yield yielding good element characteristics can be increased, and high reliability in quality can be obtained.

According to the method of manufacturing a semiconductor light emitting device of the seventh invention, a p-type layer and an n-type layer made of a gallium nitride compound semiconductor are formed on the same surface side of a substrate, and the p-type layer and the n-type layer are formed.
A transparent electrode composed of a single or composite of the same conductive material, or a layered structure composed of the same is simultaneously formed on the entire surface or a part of the mold layer to form a p-side electrode and an n-side electrode, respectively. Therefore, when manufacturing a semiconductor light emitting device equivalent to the fifth invention, it is possible to simplify the electrode forming process and shorten the entire manufacturing process, and the same effect as the sixth invention. Can be obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional structural diagram of a semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a manufacturing process of the semiconductor light emitting device shown in FIG.

FIG. 3 shows the operating voltage of the device, the adhesion of the electrodes, and Ni, Ti.
Is a graph showing the relationship with the thickness of the.

FIG. 4 is a sectional structural view of a semiconductor light emitting device (single hetero structure) according to a second embodiment of the present invention.

FIG. 5 is a sectional structural view of a semiconductor light emitting device (double hetero structure) according to a third embodiment of the present invention.

FIG. 6 is a sectional structural view of a semiconductor light emitting device (semiconductor laser) according to a fourth embodiment of the present invention.

FIG. 7 is a sectional structural view of a semiconductor light emitting device (double hetero structure) according to a fifth embodiment of the present invention.

FIG. 8 is a plan structural view of a semiconductor light emitting device of a fifth embodiment.

FIG. 9 is a sectional structural view of an LED product on which the semiconductor light emitting device of the present invention is mounted.

FIG. 10 is another LE in which the semiconductor light emitting device of the present invention is mounted.
It is a cross-section figure of D product.

FIG. 11 is a cross-sectional view showing a structure of a conventional gallium nitride-based compound semiconductor light emitting device.

12 is a cross-sectional view showing a manufacturing process of the semiconductor light emitting device shown in FIG.

FIG. 13 is a cross-sectional view following FIG.

[Explanation of symbols]

 11, 31, 41, 51, 61 Sapphire substrate 12, 32, 42, 52, 62 n-type layer 13, 33, 34, 44, 54, 56, 64 p-type layer 14, 35, 45, 57, 65 p-side Electrode 15, 36, 46, 58, 66 n-side electrode 21 mask pattern 22 metal layer 43, 53, 63 active layer 55 n-type region

Claims (7)

[Claims] 1. A p-type layer and an n-type layer made of a gallium nitride-based compound semiconductor formed on the same surface side of a substrate, and a p-side electrode and an n-side formed on the p-type layer and the n-type layer, respectively. In a semiconductor light emitting device including an electrode, the p-side electrode and the n-side electrode are electrodes formed of the same metal simple substance or alloy, or a layered structure including them in the same step. Semiconductor light emitting device. 2. The semiconductor light emitting device according to claim 1, wherein the p-side electrode and the n-side electrode are formed by stacking at least Ti and Au. 3. The semiconductor light emitting device according to claim 1, wherein the p-side electrode and the n-side electrode are formed by stacking at least Ni and Au. 4. The p-side electrode and the n-side electrode are respectively connected to the first and second external leads by a flip chip method, and the face down is used to extract light from the back surface side of the substrate to the outside. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is a semiconductor light emitting device. 5. A p-type layer and an n-type layer made of a gallium nitride-based compound semiconductor formed on the same surface side of the substrate, and a p-side electrode and an n-side formed on the p-type layer and the n-type layer, respectively. In a semiconductor light emitting device including an electrode, the p-side electrode and the n-side electrode are composed of a simple substance or a complex of the same conductive material, or a layered structure made of them, and are transparent in the same process. A semiconductor light-emitting device, which is a conductive electrode. 6. A p-type layer and an n-type layer made of a gallium nitride-based compound semiconductor are formed on the same surface side of a substrate, and the same metal simple substance or alloy is formed on all or part of the p-type layer and the n-type layer. Or a method of manufacturing a semiconductor light emitting device, characterized in that an electrode having a layered structure composed of them is simultaneously formed to form a p-side electrode and an n-side electrode, respectively. 7. A p-type layer and an n-type layer made of a gallium nitride-based compound semiconductor are formed on the same surface side of a substrate, and the same conductive material is formed on all or part of the p-type layer and the n-type layer. A method for manufacturing a semiconductor light-emitting device, characterized in that a light-transmitting electrode composed of a single substance or a composite or a layered structure composed of them is simultaneously formed to form a p-side electrode and an n-side electrode, respectively.