JPH09258152A - Waveguide type optical device - Google Patents
Waveguide type optical deviceInfo
- Publication number
- JPH09258152A JPH09258152A JP8990496A JP8990496A JPH09258152A JP H09258152 A JPH09258152 A JP H09258152A JP 8990496 A JP8990496 A JP 8990496A JP 8990496 A JP8990496 A JP 8990496A JP H09258152 A JPH09258152 A JP H09258152A
- Authority
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- Japan
- Prior art keywords
- dielectric layer
- substrate
- type optical
- optical waveguide
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、焦電効果を持つ基
板に光導波路を形成し、制御用の電極により前記光導波
路に電界を印加する構造を持つ光変調器、光スイッチ等
の導波路型光デバイスに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a waveguide such as an optical modulator or an optical switch having a structure in which an optical waveguide is formed on a substrate having a pyroelectric effect and an electric field is applied to the optical waveguide by a control electrode. Type optical device.
【0002】[0002]
【従来の技術】この種の導波路型光デバイスの従来例と
して、Z-カットのニオブ酸リチウム(LiNbO3)基板
を用いたマッハツェンダ型光変調器を例にとって説明す
る。図5は導波路型光デバイスの従来例としてのマッハ
ツェンダ型光変調器の平面図であり、図6はその中央部
分の断面図を示している。この光変調器は、結晶軸のZ
軸が基板の厚み方向となるようにカットされたニオブ酸
リチウム結晶基板(焦電性を有する電気光学結晶基板)
1の主面上にチタン(Ti)の熱拡散によってマッハツ
ェンダ干渉型の光導波路2を形成し、その上に所望の変
調特性が得られるように誘電体層3及び制御用の電極
4,5を配置して構成される。電極4は励起電極であ
り、電極5は接地電極である。2. Description of the Related Art A Mach-Zehnder type optical modulator using a Z-cut lithium niobate (LiNbO 3 ) substrate will be described as a conventional example of this type of waveguide type optical device. FIG. 5 is a plan view of a Mach-Zehnder type optical modulator as a conventional example of a waveguide type optical device, and FIG. 6 is a sectional view of a central portion thereof. This optical modulator has a crystal axis Z
Lithium niobate crystal substrate (electro-optical crystal substrate having pyroelectricity) cut so that its axis is in the thickness direction of the substrate
A Mach-Zehnder interference type optical waveguide 2 is formed on the main surface of 1 by thermal diffusion of titanium (Ti), and a dielectric layer 3 and control electrodes 4 and 5 are formed on the optical waveguide 2 so that desired modulation characteristics can be obtained. Arranged and configured. The electrode 4 is an excitation electrode and the electrode 5 is a ground electrode.
【0003】この種の導波路型光デバイスにおける大き
な問題は、その動作安定性であり、特に直流電圧の印加
や温度の変化に対する変調特性等のドリフトは、デバイ
スの構成要素である結晶基板、誘電体層等の物性やその
構造配置によって左右され、従来からその不安定性の低
減のために様々な提案がなされている。A major problem in this type of waveguide type optical device is its operational stability. Particularly, drift such as modulation characteristics with respect to application of a DC voltage or temperature change is caused by a crystal substrate, a dielectric, which is a component of the device. Various proposals have been made to reduce the instability, which depend on the physical properties of the body layer and the structural arrangement thereof.
【0004】このうち温度に対するドリフトは、ニオブ
酸リチウム結晶基板等の電気光学結晶基板の持つ焦電性
に端を発し、そのメカニズムに関しては以下のように考
えられている。Of these, the drift with respect to temperature originates from the pyroelectricity of an electro-optic crystal substrate such as a lithium niobate crystal substrate, and its mechanism is considered as follows.
【0005】上記導波路型光デバイスの温度変化が生じ
ると、結晶基板の焦電効果によって基板表面(光導波路
が形成されている主面)と裏面に電荷が生じる。このう
ち裏面の電荷が作る電界は通常用いられる基板の厚さ
(0.5〜1mm)では小さく、また特公平4−2248
5号に開示されている如く、基板裏面に導電性材料を付
加し接地することでこの影響をなくすことができる。一
方、基板の光導波路が形成されている主面に生じた電荷
は、通常基板上に形成された誘電体層の分極を誘起し、
その結果、焦電効果によって生じた電荷は誘電体層表面
に誘起される分極電荷に置き換わることになる。誘電体
表面の電荷は可動性を有しないため、この表面電荷の作
る電界は近傍の電気的配置(特に導体)によって大きく
左右される。通常、光変調器には基板の電気光学効果を
用いて屈折率制御を行うための電極が配置されているた
め、表面近傍には図6中の電気力線で示す如き電界が生
じることになる。この電界は温度変化の状況によって変
動するから、動作点のドリフトを引き起こす。When the temperature of the above-mentioned waveguide type optical device changes, electric charges are generated on the substrate surface (main surface on which the optical waveguide is formed) and the back surface due to the pyroelectric effect of the crystal substrate. Of these, the electric field generated by the charges on the back surface is small when the thickness of the substrate that is normally used (0.5 to 1 mm) is small.
As disclosed in No. 5, this effect can be eliminated by adding a conductive material to the back surface of the substrate and grounding. On the other hand, the electric charge generated on the main surface of the substrate on which the optical waveguide is formed induces the polarization of the dielectric layer normally formed on the substrate,
As a result, the electric charge generated by the pyroelectric effect is replaced by the polarized electric charge induced on the surface of the dielectric layer. Since the electric charges on the surface of the dielectric material are not mobile, the electric field generated by the surface charges is greatly influenced by the electrical arrangement in the vicinity (especially the conductor). Usually, an electrode for controlling the refractive index using the electro-optical effect of the substrate is arranged in the optical modulator, so that an electric field as shown by the lines of electric force in FIG. 6 is generated near the surface. . This electric field fluctuates depending on the condition of temperature change, which causes a drift of the operating point.
【0006】このため、特公平4−22485号等で
は、図7のように誘電体層3の上にさらに低抵抗膜6を
形成し、電界分布の不均一さを低減することが開示され
ている(図7中、図6と同一又は相当部分に同一符号を
付した)。例えば、これら低抵抗膜材料として、シリコ
ンやITOを用いたもの、あるいは特開平5−2241
64号で示された如き金属の部分酸化膜を用いたもの等
が提案されている。Therefore, Japanese Patent Publication No. 22485/1992 discloses that the low resistance film 6 is further formed on the dielectric layer 3 as shown in FIG. 7 to reduce the unevenness of the electric field distribution. (In FIG. 7, the same or corresponding parts as in FIG. 6 are designated by the same reference numerals). For example, a material using silicon or ITO as these low resistance film materials, or JP-A-5-2241.
A device using a metal partial oxide film as shown in No. 64 has been proposed.
【0007】[0007]
【発明が解決しようとする課題】しかし、図7に示すよ
うに、低抵抗膜6を一様に付与する構成は、本来絶縁さ
れていなければならない励起電極4と接地電極5の間に
も低抵抗膜6がまたがることになるため、低周波での特
性を劣化させ、電極4,5や誘電体層3、光導波路2の
構成によっては直流電圧印加に対する安定性の点でも悪
影響を与える。また、この低抵抗膜の付与によっても電
極と光導波路の配置の非対称性によるものや、わずかに
残存する電荷分布の不均一さのため、温度による不安定
性を完全になくすことは難しい。However, as shown in FIG. 7, the structure in which the low resistance film 6 is uniformly applied has a low resistance even between the excitation electrode 4 and the ground electrode 5 which should originally be insulated. Since the resistance film 6 is straddled, the characteristics at low frequencies are deteriorated, and depending on the configurations of the electrodes 4, 5, the dielectric layer 3, and the optical waveguide 2, the stability with respect to the DC voltage application is also adversely affected. Further, even if the low resistance film is provided, it is difficult to completely eliminate the instability due to temperature due to the asymmetry of the arrangement of the electrode and the optical waveguide and the slight nonuniformity of the remaining charge distribution.
【0008】本発明は、上記の点に鑑み、電極と誘電体
層及び光導波路を形成した焦電性基板の配置を最適化す
ることで、基板の焦電性に起因する誘起電荷によって生
じる電界の光導波路部分への影響を実質的になくし、温
度安定性に優れた導波路型光デバイスを提供することを
目的とする。In view of the above points, the present invention optimizes the arrangement of the electrode, the dielectric layer, and the pyroelectric substrate on which the optical waveguide is formed, so that the electric field generated by the induced charge due to the pyroelectricity of the substrate is optimized. It is an object of the present invention to provide a waveguide-type optical device having excellent temperature stability by substantially eliminating the influence on the optical waveguide part.
【0009】本発明のその他の目的や新規な特徴は後述
の実施の形態において明らかにする。Other objects and novel features of the present invention will be clarified in embodiments described later.
【0010】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明の導波路型光デバイスは、焦電効果を持つ基
板の主面に形成された光導波路と、前記主面上に形成さ
れた誘電体層と、前記光導波路近傍に設けられた制御用
の電極とを有する構成において、前記電極の少なくとも
一部が前記誘電体層に埋め込まれており、前記焦電効果
による電荷に起因する電気力線が前記電極側面と前記誘
電体層の外側表面間の誘電体内を通るようにしている。In order to achieve the above object, a waveguide type optical device of the present invention comprises an optical waveguide formed on the main surface of a substrate having a pyroelectric effect, and an optical waveguide formed on the main surface. In a structure having a dielectric layer formed thereon and a control electrode provided in the vicinity of the optical waveguide, at least a part of the electrode is embedded in the dielectric layer, and is caused by the charge due to the pyroelectric effect. The lines of electric force are made to pass through the dielectric between the side surface of the electrode and the outer surface of the dielectric layer.
【0011】また、前記誘電体層が複数種類の誘電体で
構成され、最下層の誘電体が前記主面と前記電極間に介
在する構成としてもよい。Further, the dielectric layer may be composed of a plurality of types of dielectrics, and the bottom dielectric layer may be interposed between the main surface and the electrode.
【0012】[0012]
【発明の実施の形態】以下、本発明に係る導波路型光デ
バイスの実施の形態を図面に従って説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a waveguide type optical device according to the present invention will be described below with reference to the drawings.
【0013】図1は本発明に係る導波路型光デバイスの
実施の形態であって、Z-カットのニオブ酸リチウム
(LiNbO3)基板を用いたマッハツェンダ型光変調器
を示す断面図である。平面図は従来例で説明した図5と
同様である。図1において、結晶軸のZ軸が基板の厚み
方向となるようにカットされたニオブ酸リチウム結晶基
板(焦電性を有する電気光学結晶基板)1の主面上にチ
タン(Ti)の熱拡散によってマッハツェンダ干渉型の
光導波路2を形成し、その上に誘電体層3を形成してい
る。そして、制御用の電極としての励起電極4及び接地
電極5の下部は誘電体層3に埋め込まれている。換言す
れば、各電極4,5間の誘電体層3の外側表面を各電極
4,5の底面より高く形成している。この結果、前記基
板1の焦電効果に起因して前記誘電体層3の外側表面に
分極電荷が発生しても、これら分極電荷に起因する電気
力線(図1中実線で示す)は各電極4,5側面と誘電体
層3の外側表面間の誘電体内を通ることになり、それら
の部分の電界が強く、前記分極電荷に起因する光導波路
2の周辺の電界は殆どなくなる。FIG. 1 is a sectional view showing a Mach-Zehnder type optical modulator using a Z-cut lithium niobate (LiNbO 3 ) substrate as an embodiment of a waveguide type optical device according to the present invention. The plan view is the same as FIG. 5 described in the conventional example. In FIG. 1, thermal diffusion of titanium (Ti) is carried out on the main surface of a lithium niobate crystal substrate (electro-optical crystal substrate having pyroelectricity) 1 which is cut so that the Z axis of the crystal axis is in the thickness direction of the substrate. To form a Mach-Zehnder interference type optical waveguide 2, and a dielectric layer 3 thereon. The lower portions of the excitation electrode 4 and the ground electrode 5 as control electrodes are embedded in the dielectric layer 3. In other words, the outer surface of the dielectric layer 3 between the electrodes 4 and 5 is formed higher than the bottom surface of the electrodes 4 and 5. As a result, even if polarization charges are generated on the outer surface of the dielectric layer 3 due to the pyroelectric effect of the substrate 1, the lines of electric force (indicated by solid lines in FIG. 1) due to these polarization charges are different from each other. It passes through the dielectric body between the side surfaces of the electrodes 4 and 5 and the outer surface of the dielectric layer 3, the electric field at those portions is strong, and the electric field around the optical waveguide 2 due to the polarization charge is almost eliminated.
【0014】従って、前記基板1の焦電効果によって生
ずる電界の変化が光導波路2中を伝搬する光に対して影
響を及ぼすことがなくなり、図7に示した従来構成のよ
うな低抵抗膜の付加を行わなくとも、温度ドリフトを軽
減し、温度安定性の向上を図ることができる。Therefore, the change of the electric field caused by the pyroelectric effect of the substrate 1 does not affect the light propagating in the optical waveguide 2, and the low resistance film of the conventional structure shown in FIG. It is possible to reduce the temperature drift and improve the temperature stability without addition.
【0015】[0015]
【実施例】図2に本発明による実施例1を示し、図3は
実施例1の場合の光変調器の温度ドリフトのデータを示
し、さらに図4は本発明による実施例2を示す。実施例
1,2共にマッハツェンダ型光変調器を例示している。EXAMPLE FIG. 2 shows Example 1 according to the present invention, FIG. 3 shows temperature drift data of the optical modulator in the case of Example 1, and FIG. 4 shows Example 2 according to the present invention. Both Embodiments 1 and 2 exemplify a Mach-Zehnder type optical modulator.
【0016】(実施例1)まず、図2の如くZ-カット
のニオブ酸リチウム(LiNbO3)基板1の主面上に膜
厚800オングストローム、幅6μmのチタン(Ti)
を真空蒸着とリフトオフによって成膜し、1050℃の
乾燥酸素(Dry-O2)雰囲気中にて7.5時間熱拡散さ
せ、光導波路2を形成する。次に、下層誘電体3aとし
てシリカ(SiO2)を1μm蒸着した後、その上にクロ
ム(Cr)50nm、金(Au)50nmの下地膜の成膜、ガ
イドレジストの形成を経て電界メッキで厚さ8μmの金
(Au)電極を形成して励起電極4及び接地電極5とす
る。最後に電極4,5間に上層誘電体3bとしてのエポ
キシ樹脂を7μm塗布し、所望の形状を得た。この結
果、電極4,5の下部は下層誘電体3aと上層誘電体3
bとからなる誘電体層3に埋め込まれた状態となる。ま
た、下層誘電体3aは基板1の主面と電極4,5の間に
介在するバッファ層となるものであって、光吸収のない
特性を有し、光導波路2を伝搬する光の損失防止(電極
4,5の金属による光の吸収を防止)を目的としてい
る。Example 1 First, as shown in FIG. 2, titanium (Ti) having a film thickness of 800 Å and a width of 6 μm was formed on the main surface of a Z-cut lithium niobate (LiNbO 3 ) substrate 1.
Is deposited by vacuum evaporation and lift-off, and is thermally diffused in a dry oxygen (Dry-O 2 ) atmosphere at 1050 ° C. for 7.5 hours to form the optical waveguide 2. Next, after depositing silica (SiO 2 ) as a lower layer dielectric 3a by 1 μm, a base film of chromium (Cr) 50 nm and gold (Au) 50 nm is formed thereon, a guide resist is formed, and then a thickness is formed by electrolytic plating. A gold (Au) electrode having a thickness of 8 μm is formed to serve as the excitation electrode 4 and the ground electrode 5. Finally, an epoxy resin as the upper dielectric 3b was applied between the electrodes 4 and 5 by 7 μm to obtain a desired shape. As a result, the lower portions of the electrodes 4 and 5 are located at the lower layer dielectric 3a and the upper layer dielectric 3a.
It is in a state of being embedded in the dielectric layer 3 including b. The lower-layer dielectric 3a serves as a buffer layer interposed between the main surface of the substrate 1 and the electrodes 4 and 5, has a property of not absorbing light, and prevents loss of light propagating in the optical waveguide 2. The purpose is to prevent the absorption of light by the metal of the electrodes 4 and 5.
【0017】実施例1の構成による光変調器の温度ドリ
フトのデータを図3中に線(イ)で示す。但し、図3の
横軸は温度(℃)、縦軸は光変調器の動作点変動(V)
を表している。また、比較のため図6の従来例構造のも
のを別途作製して得たデータも線(ロ)で示す。この実
施例1の構成とすることで、低抵抗膜を電極間に付与す
ることなしに温度ドリフトを低減できていることがわか
る。The data of the temperature drift of the optical modulator having the configuration of the first embodiment is shown by the line (a) in FIG. However, the horizontal axis of FIG. 3 is temperature (° C.), and the vertical axis is operating point variation (V) of the optical modulator.
Is represented. Further, for comparison, data obtained by separately producing the structure of the conventional example of FIG. 6 is also shown by a line (b). It can be seen that the configuration of Example 1 can reduce the temperature drift without providing the low resistance film between the electrodes.
【0018】実施例1は誘電体層3を複数種の誘電体で
構成できるため、電極4,5の誘電体層3中への埋め込
み高さを十分大きくすることができ、また最下層誘電体
は光吸収のないバッファ層に適した材質とすることが可
能である。In the first embodiment, since the dielectric layer 3 can be composed of a plurality of types of dielectrics, the height of embedding the electrodes 4 and 5 in the dielectric layer 3 can be made sufficiently large, and the lowermost dielectric layer Can be made of a material suitable for the buffer layer that does not absorb light.
【0019】(実施例2)図4の実施例2では、光導波
路2は実施例1と同様な方法によって基板1の主面に形
成している。そして、誘電体層3となるシリカ(Si
O2)を1μm蒸着した後、フォトリソグラフィとイオ
ンミリングによって励起電極4及び接地電極5を埋め込
むための深さ0.6μmの溝11と段差12を形成し
た。後は、実施例1と同様な手法で誘電体層3上の凹部
である溝11と段差12に電極4,5を形成した。な
お、溝11,段差12の底部に薄肉で残った誘電体部分
は基板主面と電極4,5間に介在するバッファ層とな
る。(Embodiment 2) In Embodiment 2 of FIG. 4, the optical waveguide 2 is formed on the main surface of the substrate 1 by the same method as that of Embodiment 1. Then, the silica (Si
After depositing O 2 ) for 1 μm, a groove 11 and a step 12 having a depth of 0.6 μm for burying the excitation electrode 4 and the ground electrode 5 were formed by photolithography and ion milling. After that, the electrodes 4 and 5 were formed in the groove 11 and the step 12 on the dielectric layer 3 in the same manner as in Example 1. The thin dielectric portion remaining on the bottoms of the groove 11 and the step 12 serves as a buffer layer interposed between the main surface of the substrate and the electrodes 4 and 5.
【0020】実施例2の構成においても、温度ドリフト
について実施例1とほぼ同様の結果であった。Also in the structure of the second embodiment, the temperature drift is almost the same as that of the first embodiment.
【0021】なお、図示は省略したが、基板1の裏側に
導電性材料を付加し接地することで基板裏側の電荷の影
響をなくすことができる。Although not shown, by adding a conductive material to the back side of the substrate 1 and grounding it, the influence of charges on the back side of the substrate can be eliminated.
【0022】また、基板1、光導波路2、誘電体層3、
電極4,5の材質は実施例1,2で例示した材質以外の
ものとすることが可能であり、原理上は電極4,5の上
面まで誘電体層3に埋設されるようにすることも可能で
ある。The substrate 1, the optical waveguide 2, the dielectric layer 3,
The materials of the electrodes 4 and 5 may be other than the materials exemplified in the first and second embodiments, and in principle, the upper surfaces of the electrodes 4 and 5 may be embedded in the dielectric layer 3. It is possible.
【0023】以上本発明の実施の形態について説明して
きたが、本発明はこれに限定されることなく請求項の記
載の範囲内において各種の変形、変更が可能なことは当
業者には自明であろう。Although the embodiment of the present invention has been described above, it is obvious to those skilled in the art that the present invention is not limited to this and various modifications and changes can be made within the scope of the claims. Ah
【0024】[0024]
【発明の効果】以上説明したように、本発明によれば、
光導波路を形成した基板の焦電効果によって生ずる電界
の変化が光導波路中の光に対して影響を与えないように
することができるため、温度安定性に優れた導波路型光
デバイスを実現することができる。As described above, according to the present invention,
Since it is possible to prevent the change in the electric field caused by the pyroelectric effect of the substrate on which the optical waveguide is formed from affecting the light in the optical waveguide, a waveguide type optical device with excellent temperature stability is realized. be able to.
【図1】本発明に係る導波路型光デバイスの実施の形態
であって、導波路型光デバイスとしての光変調器の断面
及び焦電荷による電界を示す断面図である。FIG. 1 is a cross-sectional view showing an embodiment of a waveguide type optical device according to the present invention and a cross section of an optical modulator as a waveguide type optical device and an electric field due to a pyroelectric charge.
【図2】本発明による実施例1の断面図である。FIG. 2 is a sectional view of a first embodiment according to the present invention.
【図3】実施例1による光変調器の温度特性の測定結果
を示すグラフである。FIG. 3 is a graph showing measurement results of temperature characteristics of the optical modulator according to the first embodiment.
【図4】本発明による実施例2の断面図である。FIG. 4 is a sectional view of a second embodiment according to the present invention.
【図5】導波路型光デバイスの従来例としての光変調器
を示す平面図である。FIG. 5 is a plan view showing an optical modulator as a conventional example of a waveguide type optical device.
【図6】従来例としての光変調器の断面及び焦電荷によ
る電界を示す図5のVI−VI断面図である。6 is a VI-VI sectional view of FIG. 5 showing a cross section of an optical modulator as a conventional example and an electric field due to a pyroelectric charge.
【図7】低抵抗膜を付加した他の従来例としての光変調
器の断面と焦電荷による電界を示す断面図である。FIG. 7 is a cross-sectional view showing a cross section of an optical modulator as another conventional example to which a low resistance film is added and an electric field due to a pyroelectric charge.
1 基板 2 光導波路 3 誘電体層 3a 下層誘電体 3b 上層誘電体 4 励起電極 5 接地電極 6 低抵抗膜 11 溝 12 段差 1 Substrate 2 Optical Waveguide 3 Dielectric Layer 3a Lower Layer Dielectric 3b Upper Layer Dielectric 4 Excitation Electrode 5 Grounding Electrode 6 Low Resistance Film 11 Groove 12 Step
Claims (2)
光導波路と、前記主面上に形成された誘電体層と、前記
光導波路近傍に設けられた制御用の電極とを有する導波
路型光デバイスにおいて、前記電極の少なくとも一部が
前記誘電体層に埋め込まれており、前記焦電効果による
電荷に起因する電気力線が前記電極側面と前記誘電体層
の外側表面間の誘電体内を通るように構成したことを特
徴とする導波路型光デバイス。1. An optical waveguide formed on a main surface of a substrate having a pyroelectric effect, a dielectric layer formed on the main surface, and a control electrode provided near the optical waveguide. In the waveguide type optical device, at least a part of the electrode is embedded in the dielectric layer, and lines of electric force caused by the charges due to the pyroelectric effect are generated between the electrode side surface and the outer surface of the dielectric layer. A waveguide type optical device characterized by being configured to pass through a dielectric body.
され、最下層の誘電体は前記主面と前記電極間に介在し
ている請求項1記載の導波路型光デバイス。2. The waveguide type optical device according to claim 1, wherein the dielectric layer is composed of a plurality of types of dielectrics, and the lowermost dielectric is interposed between the main surface and the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8990496A JPH09258152A (en) | 1996-03-21 | 1996-03-21 | Waveguide type optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8990496A JPH09258152A (en) | 1996-03-21 | 1996-03-21 | Waveguide type optical device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09258152A true JPH09258152A (en) | 1997-10-03 |
Family
ID=13983716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8990496A Withdrawn JPH09258152A (en) | 1996-03-21 | 1996-03-21 | Waveguide type optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09258152A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000010052A1 (en) * | 1998-08-10 | 2000-02-24 | Sumitomo Osaka Cement Co., Ltd. | Light modulator of waveguide type |
| US6385360B1 (en) * | 1998-08-25 | 2002-05-07 | Nec Corporation | Light control device and a method for manufacturing the same |
| WO2024247269A1 (en) * | 2023-06-02 | 2024-12-05 | 日本電信電話株式会社 | Optical circuit |
-
1996
- 1996-03-21 JP JP8990496A patent/JPH09258152A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000010052A1 (en) * | 1998-08-10 | 2000-02-24 | Sumitomo Osaka Cement Co., Ltd. | Light modulator of waveguide type |
| US6522792B1 (en) | 1998-08-10 | 2003-02-18 | Sumitomo Osaka Cement Co., Ltd. | Light modulator of waveguide type |
| US6385360B1 (en) * | 1998-08-25 | 2002-05-07 | Nec Corporation | Light control device and a method for manufacturing the same |
| WO2024247269A1 (en) * | 2023-06-02 | 2024-12-05 | 日本電信電話株式会社 | Optical circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20030603 |