JPH09264784A - Thermal infrared sensor - Google Patents
Thermal infrared sensorInfo
- Publication number
- JPH09264784A JPH09264784A JP7475896A JP7475896A JPH09264784A JP H09264784 A JPH09264784 A JP H09264784A JP 7475896 A JP7475896 A JP 7475896A JP 7475896 A JP7475896 A JP 7475896A JP H09264784 A JPH09264784 A JP H09264784A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- sensor
- processing circuit
- signal processing
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/041—Mountings in enclosures or in a particular environment
- G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Micromachines (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、熱形赤外線センサ
に関し、詳しくは、体温計測等の放射温度計測に用いら
れる熱形赤外線センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal infrared sensor, and more particularly to a thermal infrared sensor used for radiation temperature measurement such as body temperature measurement.
【０００２】[0002]
【従来の技術】赤外線センサの小型化は産業各分野から
の要請であるが、熱形赤外線センサでは、小型化により
出力信号の微弱化やセンサ出力インピーダンスの増加と
いった問題が発生する。そのため、外部の検出回路や配
線に細心の注意を払わなければ充分な感度や精度、Ｓ／
Ｎ比を得ることができない。2. Description of the Related Art Although miniaturization of an infrared sensor is a demand from various industrial fields, the thermal infrared sensor causes problems such as a weak output signal and an increase in sensor output impedance due to miniaturization. Therefore, if you do not pay close attention to external detection circuits and wiring, sufficient sensitivity, accuracy, S /
N ratio cannot be obtained.
【０００３】これまで、熱形赤外線センサの感度の改良
については、例えば特開平７−１２０３０６号公報に開
示されるように、赤外線受光部を陰圧または熱伝達係数
の小さなガスを封入した気密構造部内に設置する方法が
提唱されている。また、例えば特開昭５７−１７８１４
９号公報及び特開昭６２−２７７５２８号公報に開示さ
れるように、赤外線受光部を細い梁で搭載基板から遠ざ
けることによっても感度を向上させることが可能であ
る。これらは、感温素子である赤外線受光部を熱的に孤
立化させることにより受光部の蓄熱性を高める、という
原理に基づいている。Up to now, regarding the improvement of the sensitivity of the thermal infrared sensor, for example, as disclosed in Japanese Patent Laid-Open No. 7-120306, a hermetic structure in which the infrared light receiving portion is filled with a negative pressure or a gas having a small heat transfer coefficient. The method of installing in the department is advocated. Also, for example, Japanese Patent Application Laid-Open No. 57-18814
As disclosed in Japanese Patent Laid-Open No. 9 and Japanese Patent Laid-Open No. 62-277528, it is possible to improve the sensitivity by moving the infrared ray receiving section away from the mounting substrate with a thin beam. These are based on the principle that the infrared light receiving portion, which is a temperature sensitive element, is thermally isolated to enhance the heat storage property of the light receiving portion.
【０００４】また、熱形赤外線センサの精度の改良につ
いては、例えば、森村正直、山崎弘郎編「センサ工学」
株式会社朝倉書店発行（１９８２年）第２３９〜２４１
頁に開示されるように、遮光されている以外は赤外線受
光部と全く同じ環境にある受光部を補償用素子として、
その差分を計測することによりセンサへの熱的外乱を排
除する「差動型」のセンサ構造が提案されている。Regarding the improvement of the accuracy of the thermal infrared sensor, for example, "Sensor Engineering" edited by Morimura, H., Yamazaki, H.
Published by Asakura Shoten Co., Ltd. (1982) 239-241
As disclosed in the page, as a compensating element, the light receiving part in the same environment as the infrared light receiving part except that it is shielded from light,
A “differential” sensor structure has been proposed which measures the difference to eliminate thermal disturbance to the sensor.
【０００５】一方、出力インピーダンスの増加によるＳ
／Ｎ比の悪化の防止については、圧力センサ等に関し
て、例えばM. Esashi, Y. Matsumoto and S. Shoji, "A
bsolute pressure sensor by air-tight electrical fe
edthrough structure", Sensors and Actuators, A, p
p.1048-1052 (1990) に開示されるように、マイクロマ
シニング技術を用いて、検出部と処理回路をモノリシッ
ク構造に集積化した「スマート・センサ」が提案されて
いる。On the other hand, S due to an increase in output impedance
Regarding the prevention of deterioration of the / N ratio, for example, M. Esashi, Y. Matsumoto and S. Shoji, "A.
bsolute pressure sensor by air-tight electrical fe
edthrough structure ", Sensors and Actuators, A, p
As disclosed in p.1048-1052 (1990), there is proposed a "smart sensor" in which a detection unit and a processing circuit are integrated in a monolithic structure by using a micromachining technique.
【０００６】[0006]
【発明が解決しようとする課題】しかし、熱形赤外線セ
ンサでは、処理回路からの発熱が受光部に妨害を与える
ため、モノリシック構造は必ずしも有益でなく、適用の
効果は望めない。また、モノリシック構造とするために
は、同一基板により多くの加工を施さねばならないた
め、生産歩留まりが低下してしまう。さらに、処理回路
を作製した後にセンサ部を作製するために、センサ製造
工程に制限が発生し、製造が困難になる。However, in the thermal infrared sensor, the monolithic structure is not necessarily beneficial and the effect of application cannot be expected because the heat generated from the processing circuit interferes with the light receiving portion. Further, in order to obtain a monolithic structure, more processing needs to be performed on the same substrate, which reduces the production yield. Further, since the sensor portion is manufactured after the processing circuit is manufactured, the sensor manufacturing process is limited, which makes the manufacturing difficult.
【０００７】したがって、本発明の目的は、高い感度と
精度を確保し、かつＳ／Ｎ比が改善された小型化された
熱形赤外線センサを提供することにある。本発明の他の
目的は、生産性に優れた小型された熱形赤外線センサを
提供することを目的とする。Therefore, it is an object of the present invention to provide a miniaturized thermal infrared sensor which secures high sensitivity and accuracy and has an improved S / N ratio. Another object of the present invention is to provide a miniaturized thermal infrared sensor having excellent productivity.
【０００８】[0008]
【課題を解決するための手段】本発明者らは、熱形赤外
線センサの小型化について鋭意研究した結果、上記諸目
的が以下の本発明により達成されることを見出した。DISCLOSURE OF THE INVENTION The inventors of the present invention have made extensive studies as to miniaturization of a thermal infrared sensor, and as a result, have found that the above-mentioned various objects can be achieved by the present invention described below.
【０００９】すなわち、本発明は、センサ基板と薄膜の
赤外線受光部と該赤外線受光部と同一素材、形状の補償
素子を有し、前記赤外線受光部および前記補償素子は前
記センサ基板上に該センサ基板から熱分離されるように
形成され、かつ１つ又は複数の蓋体により気密封止され
た熱形赤外線センサにおいて、前記蓋体の一部に赤外線
の信号処理回路を有することを特徴とする熱形赤外線セ
ンサである。That is, the present invention has a sensor substrate, a thin film infrared ray receiving portion, and a compensating element of the same material and shape as the infrared ray receiving portion, and the infrared ray receiving portion and the compensating element are provided on the sensor substrate. A thermal infrared sensor formed to be thermally separated from a substrate and hermetically sealed by one or a plurality of lids, characterized in that a part of the lid has an infrared signal processing circuit. It is a thermal infrared sensor.
【００１０】本発明はまた、前記信号処理回路は前記赤
外線受光部および前記補償素子の出力の差動増幅回路で
ある前記熱形赤外線センサである。The present invention is also the thermal infrared sensor in which the signal processing circuit is a differential amplifier circuit for the outputs of the infrared receiving section and the compensating element.
【００１１】本発明はさらに、前記信号処理回路を有す
る蓋体は半導体材料からなる前記熱形赤外線センサであ
る。The present invention is also the thermal infrared sensor in which the lid having the signal processing circuit is made of a semiconductor material.
【００１２】本発明はまた、前記センサ基板および前記
蓋体は単結晶材料からなる前記熱形赤外線センサであ
る。The present invention is also the thermal infrared sensor, wherein the sensor substrate and the lid are made of a single crystal material.
【００１３】本発明はさらに、前記気密封止は、前記赤
外線受光部および前記補償素子が同一の真空に曝される
ようにした前記熱形赤外線センサである。Further, the present invention is the thermal infrared sensor, wherein the hermetic sealing is such that the infrared light receiving portion and the compensating element are exposed to the same vacuum.
【００１４】本発明はまた、前記赤外線受光部および前
記補償素子が前記信号処理回路を有する蓋体により気密
封止されたときに、前記赤外線受光部および前記補償素
子の電極と前記信号処理回路の電極が電気的に接続され
るように配置された前記熱形赤外線センサである。According to the present invention, when the infrared ray receiving portion and the compensating element are hermetically sealed by a lid having the signal processing circuit, the electrodes of the infrared ray receiving portion and the compensating element and the signal processing circuit are provided. The thermal infrared sensor is arranged so that the electrodes are electrically connected.
【００１５】[0015]
【発明の実施の形態】本発明の熱形赤外線センサは、セ
ンサ基板と薄膜の赤外線受光部と該赤外線受光部と同一
形状、素材の補償素子を有し、前記赤外線受光部および
前記補償素子は前記センサ基板上に該センサ基板から熱
分離されるように形成され、かつ１つ又は複数の蓋体に
より気密封止されたものである。すなわち、本発明の熱
形赤外線センサは、少なくとも２つの同一素材、形状の
感温素子を有し、一方の感温素子は赤外線を入射させ赤
外線受光部とし、他方の感温素子は遮光した以外は前記
赤外線受光部と同一環境に置いて補償素子として、その
差分を計測することにより熱的外乱を排除する差動型の
熱形赤外線センサである。また、前記赤外線受光部およ
び前記補償素子が前記センサ基板から熱分離されるよう
に形成する方法としては、前記センサ基板上に空洞部を
設け、該空洞部中に前記赤外線受光部および前記補償素
子を、複数点支持の架橋（ブリッジ）型、カンチレバー
型、ダイアフラム型等の構造によりそれぞれ支持し、前
記センサ基板から隔離するものが挙げられる。さらに、
前記赤外線受光部および前記補償素子を気密封止する方
法としては、該空洞部中の前記赤外線受光部および前記
補償素子を１つまたは複数の蓋体で一緒にまたは別々に
覆い、陰圧してまたは熱伝達係数の小さい気体を封入し
て気密封止して熱的に孤立させたものが挙げられる。BEST MODE FOR CARRYING OUT THE INVENTION A thermal infrared sensor according to the present invention has a sensor substrate, a thin film infrared light receiving portion, and a compensating element having the same shape and material as the infrared light receiving portion. It is formed on the sensor substrate so as to be thermally separated from the sensor substrate, and is hermetically sealed by one or a plurality of lids. That is, the thermal infrared sensor of the present invention has at least two temperature-sensitive elements of the same material and shape, one of which has infrared rays incident thereon to serve as an infrared ray receiving section, and the other of which has light-shielded elements. Is a differential-type thermal infrared sensor that is placed in the same environment as the infrared light receiving section and serves as a compensating element, and measures the difference between them to eliminate thermal disturbance. Further, as a method of forming the infrared receiving section and the compensating element so as to be thermally separated from the sensor substrate, a cavity is provided on the sensor substrate, and the infrared receiving section and the compensating element are provided in the cavity. Is supported by a structure of a bridge (bridge) type, a cantilever type, a diaphragm type, or the like that supports a plurality of points, and is isolated from the sensor substrate. further,
As a method for hermetically sealing the infrared receiving section and the compensating element, the infrared receiving section and the compensating element in the cavity are covered with one or a plurality of lids together or separately, and negative pressure is applied, or An example is one in which a gas having a small heat transfer coefficient is enclosed and hermetically sealed to be thermally isolated.
【００１６】本発明の熱形赤外線センサは、前記蓋体の
一部に赤外線の信号処理回路を有することを特徴とする
ものである。すなわち、本発明の熱形赤外線センサは、
上述のように気密構造を持つので、前記赤外線受光部お
よび前記補償素子と前記蓋体は近接しているにも関わら
ず熱的に絶縁されているため、前記蓋体の一部に赤外線
の信号処理回路を設けることにより、該信号処理回路に
よる前記赤外線受光部および前記補償素子への熱的妨害
を発生させることなく、受光部のごく近傍でインピーダ
ンス変換を実現することが可能であり、精度の高いセン
サを得ることができる。The thermal infrared sensor of the present invention is characterized by having an infrared signal processing circuit in a part of the lid. That is, the thermal infrared sensor of the present invention,
Since it has the airtight structure as described above, the infrared light receiving portion and the compensating element and the lid body are thermally insulated in spite of being close to each other, so that a part of the lid body receives an infrared signal. By providing the processing circuit, it is possible to realize impedance conversion in the very vicinity of the light receiving portion without causing thermal interference to the infrared light receiving portion and the compensation element by the signal processing circuit, and to improve accuracy. A high sensor can be obtained.
【００１７】また、本発明の熱形赤外線センサは、前記
信号処理回路を前記赤外線受光部および前記補償素子の
出力の差動増幅回路とすることにより、差分の増幅回路
とインピーダンス変換回路が集積化されるので、差分を
取る際に問題となる配線由来の誤差分も排除することが
可能となり、Ｓ／Ｎ比がより改善されたセンサを得るこ
とができる。In the thermal infrared sensor of the present invention, the signal processing circuit is a differential amplifier circuit for the outputs of the infrared receiving section and the compensating element, so that a differential amplifier circuit and an impedance conversion circuit are integrated. Therefore, it is possible to eliminate an error amount due to the wiring, which is a problem when obtaining the difference, and it is possible to obtain a sensor with an improved S / N ratio.
【００１８】さらに、本発明の熱形赤外線センサは、前
記信号処理回路を有する蓋体に半導体材料を用いること
により、半導体製造技術を用いて前記蓋体に前記信号処
理回路を直接形成することが可能であり、製造工程が簡
素化され生産歩留まりが向上する。使用される半導体材
料としては、単結晶、多結晶、アモルファス状のシリコ
ン、ゲルマニウムのほかＧａＡｓ等の化合物半導体等が
挙げられる。Further, in the thermal infrared sensor of the present invention, by using a semiconductor material for the lid having the signal processing circuit, the signal processing circuit can be directly formed on the lid using a semiconductor manufacturing technique. This is possible, the manufacturing process is simplified, and the production yield is improved. Examples of the semiconductor material used include single crystal, polycrystal, amorphous silicon, germanium, and compound semiconductors such as GaAs.
【００１９】また、本発明の熱形赤外線センサは、前記
センサ基板および前記蓋体に単結晶材料を用いることに
より、前記信号処理回路からの発熱を良好な熱伝導によ
って、速やかに広範囲に拡散させることが可能となり、
発熱による影響をより効果的に排除することができる。
さらに、密閉された空洞部内壁面が単結晶材料であるた
め、該内壁面に吸着するガス量を抑制することができ、
真空封止した際に容器内圧力の経時変化を抑制すること
ができる。使用される単結晶材料としては、シリコン単
結晶等が挙げられる。Further, in the thermal infrared sensor of the present invention, by using a single crystal material for the sensor substrate and the lid, the heat generated from the signal processing circuit is quickly diffused to a wide range by good heat conduction. Is possible,
The effect of heat generation can be eliminated more effectively.
Furthermore, since the inner wall surface of the closed cavity is a single crystal material, the amount of gas adsorbed on the inner wall surface can be suppressed,
It is possible to suppress the time-dependent change in the pressure inside the container when vacuum-sealed. Examples of the single crystal material used include silicon single crystal.
【００２０】さらに、本発明の熱形赤外線センサは、前
記赤外線受光部および前記補償素子が同一の真空に曝さ
れるように気密封止することにより、前記赤外線受光部
と前記補償素子を同一の環境に置くことができ、補償素
子によるセンサ自体の温度変化に対する補償精度を確保
することができるとともに、前記信号処理回路による前
記赤外線受光部および前記補償素子への熱的外乱をより
効果的に防止することができる。Further, in the thermal infrared sensor of the present invention, the infrared ray receiving portion and the compensating element are hermetically sealed so that the infrared ray receiving portion and the compensating element are exposed to the same vacuum. It can be placed in an environment, the compensation accuracy for the temperature change of the sensor itself by the compensating element can be secured, and the thermal disturbance to the infrared ray receiving section and the compensating element by the signal processing circuit can be more effectively prevented. can do.
【００２１】また、本発明の熱形赤外線センサは、前記
赤外線受光部および前記補償素子が前記信号処理回路を
有する蓋体により気密封止されたときに、前記赤外線受
光部および前記補償素子の電極と前記信号処理回路の電
極が電気的に接続されるように配置することにより、封
止組立と同時にセンサ基板と蓋体の電気的接続が完了す
るので、製造工程が簡略化される。Further, in the thermal infrared sensor of the present invention, when the infrared receiving section and the compensating element are hermetically sealed by the lid having the signal processing circuit, the electrodes of the infrared receiving section and the compensating element are provided. By arranging the electrodes of the signal processing circuit so as to be electrically connected to each other, the electrical connection between the sensor substrate and the lid is completed at the same time as the sealing and assembling, so that the manufacturing process is simplified.
【００２２】以下、本発明の実施の形態を図面をもって
さらに詳細に説明するが、本発明はかかる実施の形態に
限定されるものではない。Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings, but the present invention is not limited to such embodiments.
【００２３】図１は本発明の赤外線センサの一実施形態
を示す縦断面図である。本発明の赤外線センサは、セン
サ基板１１として単結晶シリコンからなるシリコン基板
を有する。センサ基板１１には二つの空洞部１２ａ、１
２ｂが形成されており、これらの空洞部１２ａ、１２ｂ
はいずれもセンサ基板１１の上下面に開口している。セ
ンサ基板１１の下面には、シリコンオキシナイトライド
（ＳｉＯｘ Ｎｙ ）膜１７が形成されている。シリコ
ンオキシナイトライド膜１７には、４点で支持されてな
る二つの架橋部１３ａ、１３ｂが形成されており、架橋
部１３ａ、１３ｂの各中央部の上面には赤外線感温膜１
４ａ、１４ｂがそれぞれ設けられている。赤外線感温膜
１４ａ、１４ｂには、図示しないがアルミニウム（Ａ
ｌ）膜によって形成された電気配線層の一端部が電気的
に接続され、この電極配線層の他端部はシリコン基板の
下面の周辺部に形成された電極パッド１５ａ、１５ｂ、
１５ｃに接続されている。空洞部１２ａ、１２ｂの各壁
面にはそれぞれニッケルにより形成された赤外線反射膜
１６が設けられており、一方の赤外線感温膜１４ａへ入
射した赤外線の他方の赤外線感温膜１４ｂへの入射を防
止している。FIG. 1 is a vertical sectional view showing an embodiment of an infrared sensor of the present invention. The infrared sensor of the present invention has a silicon substrate made of single crystal silicon as the sensor substrate 11. The sensor substrate 11 has two cavities 12a, 1
2b are formed, and these cavities 12a, 12b are formed.
Both have openings on the upper and lower surfaces of the sensor substrate 11. A silicon oxynitride (SiOx Ny) film 17 is formed on the lower surface of the sensor substrate 11. The silicon oxynitride film 17 is formed with two cross-linking portions 13a and 13b supported at four points, and the infrared temperature-sensitive film 1 is formed on the upper surface of each central portion of the cross-linking portions 13a and 13b.
4a and 14b are provided, respectively. Although not shown, the infrared temperature-sensitive films 14a and 14b are made of aluminum (A
l) One end of the electric wiring layer formed by the film is electrically connected, and the other end of the electrode wiring layer has electrode pads 15a, 15b formed on the peripheral portion of the lower surface of the silicon substrate.
It is connected to 15c. An infrared reflection film 16 made of nickel is provided on each wall surface of the cavities 12a and 12b to prevent the infrared rays incident on one infrared temperature sensitive film 14a from entering the other infrared temperature sensitive film 14b. are doing.
【００２４】センサ基板１１の上面にはシリコンオキシ
ナイトライド膜１７が形成され、該シリコンオキシナイ
トライド膜１７の上面に上蓋１８が高融点ハンダ接合法
により接合されている。上蓋１８は単結晶シリコンから
なるシリコン基板により形成されており、その上面には
チタン（Ｔｉ）からなる赤外線遮蔽膜１９が形成されて
いる。赤外線遮蔽膜１９の赤外線感温膜１４ａ上部に位
置する部分には赤外線案内用の開口部２０が設けられて
いる。一方、上蓋１８の下面には堀込み２６が形成さ
れ、該堀込み２６により空洞部１２ａ、１２ｂが連通さ
れている。A silicon oxynitride film 17 is formed on the upper surface of the sensor substrate 11, and an upper lid 18 is joined to the upper surface of the silicon oxynitride film 17 by a high melting point soldering method. The upper lid 18 is formed of a silicon substrate made of single crystal silicon, and an infrared shielding film 19 made of titanium (Ti) is formed on the upper surface thereof. An opening 20 for guiding infrared rays is provided in a portion of the infrared shielding film 19 located above the infrared temperature sensitive film 14a. On the other hand, a recess 26 is formed on the lower surface of the upper lid 18, and the recesses 26 connect the cavities 12a and 12b.
【００２５】一方、センサ基板１１の下面にはシリコン
オキシナイトライド膜１７を介して下蓋２２が接合され
ている。下蓋２２は、センサ基板１１と同様に単結晶シ
リコンからなるシリコン基板により形成されており、そ
の上面中央部には、図２に示すような電流増幅回路を有
する信号処理回路２１が、通常用いられる半導体集積化
技術、詳しくは熱酸化法、フォトリソグラフィ法、イオ
ン注入法、化学的気相堆積法、電子ビーム蒸着法、反応
性イオンエッチング法、湿式エッチング法等により形成
されている。信号処理回路２１への入力及び出力配線
は、図示されていないがアルミニウム膜によって下蓋２
２周辺部の電極パッド２３ａ、２３ｂ、２３ｃへと配線
されている。下蓋２２はシリコンオキシナイトライド膜
１７に真空雰囲気中において高融点ハンダ接合により接
合されており、その結果センサ基板１１の空洞部１２
ａ、１２ｂに位置する２つの赤外線感温膜１４ａ、１４
ｂはそれぞれ同一の真空度に封止されている。この封止
接合時に、同時にセンサ基板１１周辺部に形成された電
極パッド１５ａ、１５ｂ、１５ｃと、下蓋２２周辺部に
形成された電極パッド２３ａ、２３ｂ、２３ｃの必要な
個所がそれぞれ電気的に接続される。On the other hand, a lower lid 22 is bonded to the lower surface of the sensor substrate 11 via a silicon oxynitride film 17. The lower lid 22 is formed of a silicon substrate made of single crystal silicon similarly to the sensor substrate 11, and a signal processing circuit 21 having a current amplification circuit as shown in FIG. It is formed by a known semiconductor integration technique, specifically, a thermal oxidation method, a photolithography method, an ion implantation method, a chemical vapor deposition method, an electron beam evaporation method, a reactive ion etching method, a wet etching method, or the like. Although not shown, the input and output wirings to the signal processing circuit 21 are made of an aluminum film so that the lower lid 2
The wiring is wired to the electrode pads 23a, 23b, and 23c in the two peripheral portions. The lower lid 22 is joined to the silicon oxynitride film 17 by high melting point solder joining in a vacuum atmosphere, and as a result, the cavity 12 of the sensor substrate 11 is joined.
Two infrared temperature sensitive films 14a and 14 located at a and 12b.
b is sealed to the same degree of vacuum. At the time of this sealing and joining, at the same time, required portions of the electrode pads 15a, 15b, 15c formed on the peripheral portion of the sensor substrate 11 and the electrode pads 23a, 23b, 23c formed on the peripheral portion of the lower lid 22 are electrically connected to each other. Connected.
【００２６】赤外線センサ全体は、中央部に凹部を持つ
ＭＩＤ（Molded Interconnection Device）基板２４に
より形成された台座へ下蓋２２が低融点ハンダ接合法に
より接合されて支持されていると共に、センサ基板１１
の周辺部に形成されたセンサ出力用電極パッド１５ｂに
はＭＩＤ基板上に形成された電極パッド２５が電気的に
接続されている。In the entire infrared sensor, the lower lid 22 is joined and supported by a low melting point solder joining method to a pedestal formed by an MID (Molded Interconnection Device) substrate 24 having a recessed portion in the central portion, and the sensor substrate 11 is also provided.
An electrode pad 25 formed on the MID substrate is electrically connected to the sensor output electrode pad 15b formed in the peripheral portion of the.
【００２７】本赤外線センサでは、赤外線は図の上方か
ら上蓋１８の開口部２０及び空洞部１２ａを通して一方
の赤外線感温膜１４ａに選択的に入射される。他方の赤
外線感温膜１４ｂでは赤外線遮蔽膜１９により赤外線の
入射が遮蔽される。この赤外線が入射される赤外線感温
膜１４ａ（赤外線受光部）と赤外線が遮蔽される赤外線
感温膜１４ｂ（補償素子）との出力が電極パッド１５
ａ、２３ａを介して信号処理回路２１へと入力される。
信号処理回路２１により赤外線受光部と補償素子の出力
の差動が増幅されインピーダンス変換され、出力信号が
電極パッド２３ｂ、１５ｂ、２５を介してＭＩＤ基板よ
り出力される。In this infrared sensor, infrared rays are selectively incident on one infrared temperature-sensitive film 14a from above in the figure through the opening 20 and the cavity 12a of the upper lid 18. On the other infrared temperature sensitive film 14b, the infrared shielding film 19 blocks the incidence of infrared rays. The output of the infrared temperature sensitive film 14a (infrared ray receiving portion) on which the infrared rays are incident and the infrared temperature sensitive film 14b (compensation element) that shields the infrared rays are output from the electrode pad 15.
It is input to the signal processing circuit 21 via a and 23a.
The signal processing circuit 21 amplifies the differential between the outputs of the infrared ray receiving portion and the compensating element and performs impedance conversion, and the output signal is output from the MID substrate via the electrode pads 23b, 15b and 25.
【００２８】ここで、検出器から定電圧印加、電流検出
による抵抗測定を行うと、信号処理回路２１では赤外線
感温部１４ａ、１４ｂに流れる電流値を二倍に増幅して
いるため、検出器から見た抵抗値は１／２となり、対雑
音特性に優れたセンサを得ることができる。When resistance measurement is performed by applying a constant voltage and detecting current from the detector, the signal processing circuit 21 doubles the current value flowing in the infrared temperature sensing parts 14a and 14b. The resistance value seen from above becomes 1/2, and a sensor having excellent noise resistance can be obtained.
【００２９】[0029]
【発明の効果】本発明の熱形赤外線センサによれば、セ
ンサ基板と薄膜の赤外線受光部と該赤外線受光部と同一
素材、形状の補償素子を有し、前記赤外線受光部および
前記補償素子は前記センサ基板上に該センサ基板から熱
分離されるように形成され、かつ１つ又は複数の蓋体に
より気密封止された熱形赤外線センサにおいて、前記蓋
体の一部に赤外線の信号処理回路を設けたので、該信号
処理回路による前記赤外線受光部および前記補償素子へ
の熱的妨害を発生させることなく、受光部のごく近傍で
インピーダンス変換を実現することが可能であり、精度
の高いセンサを得ることができる。また、センサ基板と
信号処理回路を別々に作製できるので製造が容易となり
製造工程の簡略化や生産歩留まりの向上が図れる。According to the thermal infrared sensor of the present invention, it has a sensor substrate, a thin film infrared light receiving portion, and a compensating element of the same material and shape as the infrared light receiving portion. In a thermal infrared sensor formed on the sensor substrate so as to be thermally separated from the sensor substrate and hermetically sealed by one or more lids, an infrared signal processing circuit is provided in a part of the lid. Since the signal processing circuit is provided, the impedance conversion can be realized in the vicinity of the light receiving portion without causing thermal interference to the infrared light receiving portion and the compensating element by the signal processing circuit, and a highly accurate sensor. Can be obtained. Further, since the sensor substrate and the signal processing circuit can be separately manufactured, the manufacturing is facilitated, the manufacturing process can be simplified, and the production yield can be improved.
【００３０】また、本発明の熱形赤外線センサは、前記
信号処理回路を前記赤外線受光部および前記補償素子の
出力の差動増幅回路とすることにより、差分を取る際に
問題となる配線由来の誤差分も排除することが可能とな
り、Ｓ／Ｎ比がより改善されたセンサを得ることができ
る。Further, in the thermal infrared sensor of the present invention, the signal processing circuit is a differential amplifier circuit of the outputs of the infrared receiving section and the compensating element, so that the wiring derived from the wiring, which becomes a problem when taking the difference, is used. It is also possible to eliminate an error component, and it is possible to obtain a sensor with an improved S / N ratio.
【００３１】さらに、本発明の熱形赤外線センサは、前
記信号処理回路を有する蓋体に半導体材料を用いること
により、前記蓋体に前記信号処理回路を直接形成するこ
とが可能であり、製造工程が簡素化される。Further, in the thermal infrared sensor of the present invention, by using a semiconductor material for the lid having the signal processing circuit, the signal processing circuit can be directly formed on the lid, and the manufacturing process is performed. Is simplified.
【００３２】また、本発明の熱形赤外線センサは、前記
センサ基板および前記蓋体に単結晶材料を用いることに
より、前記信号処理回路からの発熱による影響をより効
果的に排除できるとともに、真空封止した際に容器内圧
力の経時変化を抑制することができる。Further, in the thermal infrared sensor of the present invention, by using a single crystal material for the sensor substrate and the lid, the influence of heat generated from the signal processing circuit can be more effectively eliminated, and the vacuum sealing can be performed. When stopped, it is possible to suppress the change over time in the pressure inside the container.
【００３３】さらに、本発明の熱形赤外線センサは、前
記赤外線受光部および前記補償素子が同一の真空に曝さ
れるように気密封止することにより、補償素子の精度を
確保できるとともに、前記信号処理回路による熱的外乱
をより効果的に防止することができる。Further, in the thermal infrared sensor of the present invention, the infrared receiving section and the compensating element are hermetically sealed so that they are exposed to the same vacuum, whereby the accuracy of the compensating element can be ensured and the signal It is possible to more effectively prevent thermal disturbance caused by the processing circuit.
【００３４】また、本発明の熱形赤外線センサは、前記
赤外線受光部および前記補償素子が前記信号処理回路を
有する蓋体により気密封止されたときに、前記赤外線受
光部および前記補償素子の電極と前記信号処理回路の電
極が電気的に接続されるように配置することにより、製
造工程が簡略化が図れる。Further, in the thermal infrared sensor of the present invention, when the infrared receiving section and the compensating element are hermetically sealed by the lid having the signal processing circuit, the electrodes of the infrared receiving section and the compensating element are provided. By arranging so that the electrodes of the signal processing circuit are electrically connected to each other, the manufacturing process can be simplified.
【図１】本発明の赤外線センサの一実施形態にかかる縦
断面図である。FIG. 1 is a vertical sectional view according to an embodiment of an infrared sensor of the present invention.
【図２】本発明の信号処理回路の一実施形態にかかる回
路図である。FIG. 2 is a circuit diagram according to an embodiment of a signal processing circuit of the present invention.
１１…センサ基板 １２ａ、１２ｂ…空洞部 １３ａ、１３ｂ…架橋部 １４ａ、１４ｂ…赤外線感温膜 １５ａ、１５ｂ，１５ｃ…電極パッド １６…赤外線反射膜 １７…シリコンオキシナイトライド膜 １８…上蓋 １９…赤外線遮蔽膜 ２０…開口部 ２１…信号処理回路 ２２… 下蓋 ２３ａ、２３ｂ、２３ｃ…電極パッド ２４…ＭＩＤ基板 ２５…電極パッド 11 ... Sensor substrate 12a, 12b ... Cavity part 13a, 13b ... Bridge part 14a, 14b ... Infrared temperature sensitive film 15a, 15b, 15c ... Electrode pad 16 ... Infrared reflecting film 17 ... Silicon oxynitride film 18 ... Top lid 19 ... Infrared Shielding film 20 ... Opening 21 ... Signal processing circuit 22 ... Lower lid 23a, 23b, 23c ... Electrode pad 24 ... MID substrate 25 ... Electrode pad
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小松 清 神奈川県足柄上郡中井町井ノ口1500番地 テルモ株式会社内 (72)発明者 木村 光照 宮城県宮城郡七ヶ浜町汐見台３丁目２番地 の56 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kiyoshi Komatsu, Inoguchi 1500, Nakai-cho, Ashigarashami-gun, Kanagawa Terumo Corporation (72) Koteru Kimura 56, 2-3, Shiomidai, Shichigahama-cho, Miyagi-gun, Miyagi Prefecture
Claims (6)
外線受光部と同一素材、形状の補償素子とを有し、前記
赤外線受光部および前記補償素子は前記センサ基板上に
該センサ基板から熱分離されるように形成され、かつ１
つ又は複数の蓋体により気密封止された熱形赤外線セン
サにおいて、前記蓋体の一部に赤外線の信号処理回路を
有することを特徴とする熱形赤外線センサ。1. A sensor substrate, a thin-film infrared light receiving portion, and a compensating element having the same material and shape as the infrared light receiving portion, wherein the infrared light receiving portion and the compensating element are disposed on the sensor substrate by heat from the sensor substrate. Formed to be separated and 1
A thermal infrared sensor hermetically sealed with one or a plurality of lids, wherein the lid has a signal processing circuit for infrared rays in a part thereof.
よび前記補償素子の出力の差動増幅回路である請求項１
記載の熱形赤外線センサ。2. The signal processing circuit is a differential amplifier circuit that outputs the infrared ray receiving portion and the compensating element.
The thermal infrared sensor described.
材料からなる請求項１〜２記載の熱形赤外線センサ。3. The thermal infrared sensor according to claim 1, wherein the lid having the signal processing circuit is made of a semiconductor material.
材料からなる請求項１〜３記載の熱形赤外線センサ。4. The thermal infrared sensor according to claim 1, wherein the sensor substrate and the lid are made of a single crystal material.
び前記補償素子が同一の真空に曝されるようにした請求
項１〜４記載の熱形赤外線センサ。5. The thermal infrared sensor according to claim 1, wherein the hermetic sealing is such that the infrared light receiving portion and the compensating element are exposed to the same vacuum.
前記信号処理回路を有する蓋体により気密封止されたと
きに、前記赤外線受光部および前記補償素子の電極と前
記信号処理回路の電極が電気的に接続されるように配置
された請求項１〜５記載の熱形赤外線センサ。6. The electrodes of the infrared receiving section and the compensation element and the electrodes of the signal processing circuit are electrically connected to each other when the infrared receiving section and the compensation element are hermetically sealed by a lid having the signal processing circuit. 6. The thermal infrared sensor according to claim 1, wherein the thermal infrared sensor is arranged so as to be electrically connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7475896A JPH09264784A (en) | 1996-03-28 | 1996-03-28 | Thermal infrared sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7475896A JPH09264784A (en) | 1996-03-28 | 1996-03-28 | Thermal infrared sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09264784A true JPH09264784A (en) | 1997-10-07 |
Family
ID=13556506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7475896A Withdrawn JPH09264784A (en) | 1996-03-28 | 1996-03-28 | Thermal infrared sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09264784A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002036200A (en) * | 2000-06-06 | 2002-02-05 | Lucent Technol Inc | Interconnection of micromechanical devices |
| FR2816447A1 (en) * | 2000-11-07 | 2002-05-10 | Commissariat Energie Atomique | THREE-DIMENSIONAL ELECTROMAGNETIC RADIATION DETECTION DEVICE AND METHOD FOR PRODUCING THE SAME |
| EP1157967A3 (en) * | 2000-05-22 | 2003-01-02 | Lucent Technologies Inc. | Packaging micromechanical devices |
| GB2532733A (en) * | 2014-11-25 | 2016-06-01 | Melexis Technologies Nv | Radiation detector comprising a compensating sensor |
| EP3035015A1 (en) * | 2014-12-15 | 2016-06-22 | Melexis Technologies NV | Ir sensor for ir sensing based on power control |
| US20230187459A1 (en) * | 2020-07-03 | 2023-06-15 | Mitsubishi Electric Corporation | Infrared sensor and method of manufacturing infrared sensor |
-
1996
- 1996-03-28 JP JP7475896A patent/JPH09264784A/en not_active Withdrawn
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1157967A3 (en) * | 2000-05-22 | 2003-01-02 | Lucent Technologies Inc. | Packaging micromechanical devices |
| JP2002036200A (en) * | 2000-06-06 | 2002-02-05 | Lucent Technol Inc | Interconnection of micromechanical devices |
| FR2816447A1 (en) * | 2000-11-07 | 2002-05-10 | Commissariat Energie Atomique | THREE-DIMENSIONAL ELECTROMAGNETIC RADIATION DETECTION DEVICE AND METHOD FOR PRODUCING THE SAME |
| WO2002039481A3 (en) * | 2000-11-07 | 2002-08-01 | Commissariat Energie Atomique | Device for detecting three-dimensional electromagnetic radiation and method for making same |
| US6861719B2 (en) | 2000-11-07 | 2005-03-01 | Commissariat A L'energie Atomique | Device for detecting three-dimensional electromagnetic radiation and method for making same |
| GB2532733A (en) * | 2014-11-25 | 2016-06-01 | Melexis Technologies Nv | Radiation detector comprising a compensating sensor |
| US10096724B2 (en) | 2014-11-25 | 2018-10-09 | Melexis Technologies Nv | Radiation detector comprising a compensating sensor |
| EP3035015A1 (en) * | 2014-12-15 | 2016-06-22 | Melexis Technologies NV | Ir sensor for ir sensing based on power control |
| US9989409B2 (en) | 2014-12-15 | 2018-06-05 | Melexis Technologies Nv | IR sensor for IR sensing based on power control |
| US20230187459A1 (en) * | 2020-07-03 | 2023-06-15 | Mitsubishi Electric Corporation | Infrared sensor and method of manufacturing infrared sensor |
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