JPH09320957A - Lithographic apparatus - Google Patents

Abstract

(57) Abstract: To appropriately perform exposure processing while executing various exposure processing programs using one exposure apparatus. An operator uses a keyboard 116C in advance.
A mode for switching the device environment of the projection exposure apparatus 10 is set in the storage device 120 via the main control device 106 using the above. Then, when the operator inputs an apparatus environment switching command or an exposure processing execution command from the keyboard section 116C or the operation panel section 116B, the main controller 106 sets the apparatus according to the set mode and the type of the input command. Change the environment,
An appropriate exposure processing operation can be performed based on the switched device environment.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lithographic apparatus, and more particularly to a lithographic apparatus capable of switching the environment of an apparatus according to exposure conditions.

[0002]

2. Description of the Related Art Generally, in a lithographic apparatus used for manufacturing a semiconductor integrated circuit, a liquid crystal display substrate, etc., an exposure processing program according to an exposure condition is executed so that the exposure processing is performed under a desired exposure condition. To be done. Therefore, when it is desired to perform exposure processing under different exposure conditions, it is necessary to change the setting of the state of each part of the lithographic apparatus (so-called apparatus environment) according to the exposure conditions.

In the above-mentioned lithographic apparatus, for example, a pattern image formed on a mask (reticle) is reduced and projected onto a shot area of a photosensitive substrate (wafer or glass plate) through a projection optical system by a step-and-repeat method. There is a reduction projection exposure apparatus (so-called stepper) and the like. This stepper has a projection exposure system that transfers the pattern image of the reticle onto the wafer via the projection optical system. The state (apparatus environment) of each part of the projection exposure system is set according to the usage status on the user side. It is done at the time of factory shipment, etc. The device environment of this stepper includes, for example, the position of a detection optical system (reticle microscope) that detects the mark position for reticle alignment, the size of the illumination area of the illumination light, and the effective shape and size of the secondary light source image. There is a type of σ diaphragm plate for changing, or the numerical aperture of the projection lens.

In such a conventional lithographic apparatus,
A plurality of steppers in which the apparatus environment corresponding to each exposure processing program is preset are prepared, and the exposure processing is performed while selecting the stepper corresponding to the exposure processing program to be executed each time.

For example, in the conventional stepper, the size of the exposure area projected on the photosensitive substrate (so-called exposure field size) is usually about 15 mm square, which is 5 mm.
A 5 inch size reticle is used to create a pattern area that is approximately doubled on the reticle.

By the way, the above-mentioned exposure field size tends to further increase recently, and is 17.5 m.
A m-square or 20 mm-square one is being used. This means that if the reduced projection magnification of the stepper is the same, the size of the pattern area formed on the reticle is enlarged, so that the alignment mark position for positioning formed outside the pattern area of the reticle is as described above. It is meant to vary with the size of the exposure field. As described above, when the exposure processing is performed by switching the reticles having different pattern area sizes, the detection optical system (alignment microscope) that detects the alignment marks at the alignment mark forming positions of the reticles according to the size of each pattern area is used. It is necessary to be arranged.

Therefore, in recent years, it has been considered to use different steppers for each size of the pattern area of the reticle, or to make the alignment mark detection optical system movable according to the size of the pattern area.

Further, in order to switch the above-mentioned apparatus environment, in addition to the size of the reticle pattern area, the size of the reticle itself is changing from the above-mentioned 5 inch size to the recently 6 inch size. When performing exposure processing using reticles of different sizes, it was necessary to replace the reticle holder according to the size of the reticle.

[0009]

As described above, in the conventional lithographic apparatus, the apparatus environment is set at the time of factory shipment in accordance with the usage situation (exposure condition) on the user side. Even if an exposure process is attempted under different exposure conditions after shipment from the factory, there is the inconvenience that the user cannot freely change the apparatus environment.

For this reason, when executing two or more exposure processing programs which require different apparatus environments, the number of the lithography apparatuses preset in the apparatus environment suitable for each exposure processing program is prepared. Therefore, it is inconvenient and costly.

Further, in the conventional lithographic apparatus, even if the user can change the apparatus environment to some extent, the apparatus environment must be switched every time the exposure condition is changed, which makes the operation complicated and Since it is not always clear on the user side what kind of apparatus environment should be switched for the exposure processing program to be executed, it was difficult to switch to the optimum apparatus environment for each exposure processing program.

The present invention has been made in view of the inconveniences of the prior art, and an object thereof is to make it possible to switch the environment of an apparatus in accordance with various exposure conditions so that various exposures can be performed by one apparatus. It is an object of the present invention to provide a lithographic apparatus capable of executing a processing program and performing appropriate exposure processing.

[0013]

According to a first aspect of the present invention, there is provided a projection exposure system for transferring a mask pattern onto a photosensitive substrate through a projection optical system, and an operation of each part of the projection exposure system. A lithographic apparatus comprising: a main control system for controlling the projection exposure system; Storage means for storing an exposure processing program; a device environment switching command for switching the switching means; and a desired exposure processing program called from the storage means, and the projection exposure system of the projection exposure system according to the called exposure processing program. Command input means for inputting an execution command for starting a series of operations of each part; A first mode for switching the device environment of the part of the projection exposure system in response to the input of a switching command; and an exposure process called from the storage means by the main control system in response to the input of the execution command. Mode setting means capable of presetting any one of a second mode for switching the device environment of the part of the projection exposure system in accordance with information on the device environment set in the program; And a control means for switching the part of the device environment according to the set mode.

According to this, the switching of the apparatus environment in the lithographic apparatus is controlled to be switched based on a plurality of modes that can be set in advance. According to the first aspect of the invention, the first and second modes can be set by the mode setting means, and when the switching command is input, the first mode is projected by the switching means according to the command. Switching of the device environment of a part of the exposure system is performed. Further, in the second mode, when an execution command is input, a predetermined exposure processing program is called by the main control system and based on the apparatus environment information set in the called exposure processing program. The device environment of the partial projection exposure system is switched.

As described above, when the operator wants to manually switch the apparatus environment of the lithographic apparatus, the first mode is set in the mode setting means,
By inputting a switching command, it is possible to switch to a desired device environment. Further, when it is desired to automatically switch to the apparatus environment suitable for the exposure processing program to be executed, the second mode is set in the mode setting means, and the execution command is input to write in the exposure processing program. It is possible to automatically switch a part of the device environment of the projection exposure system according to the existing device environment information. Therefore, if the operator only selects the mode,
It is possible to appropriately perform the exposure processing operation corresponding to various exposure conditions by using the lithographic apparatus on the table.

The operator in this specification is an administrator who regularly manages or sets a mode for the factory-shipped lithographic apparatus, and an operation that actually operates the lithographic apparatus to perform an exposure process. The meanings of both parties are included.

According to a second aspect of the present invention, in the lithographic apparatus according to the first aspect, the mode setting means is
A third mode can be set instead of the first mode, and when the third mode is set, the control means responds to the input of the switching command by the one of the projection exposure system. Information of the apparatus environment set in the exposure processing program called from the storage means by the main control system in response to the input of the execution command and the apparatus environment information after the switching. Compared with each other, only when they coincide with each other, the start of a series of operations of each part of the projection exposure system corresponding to the execution command is permitted.

According to this, the third mode can be set instead of the first mode that can be set in the invention described in claim 1. In this third mode, when a switching command is input, the device environment of a part of the projection exposure system is switched accordingly. When the device environment information that has been called up is compared with the device environment information set in the program and the switched device environment matches, the projection exposure system is permitted to start a series of exposure operations. It

Therefore, even if a switching command is input to switch to a desired apparatus environment, if the apparatus environment is not suitable for the exposure processing program to be executed by inputting the execution command, the exposure operation of the projection exposure system Since the start is not permitted, inappropriate exposure processing can be prevented in advance.

According to a third aspect of the present invention, in the lithographic apparatus according to the first aspect, the mode setting means is
A third mode can be further set, and when the third mode is set, the control means switches the device environment of the part of the projection exposure system in response to the input of the switching command, The apparatus environment information set in the exposure processing program called from the storage unit by the main control system in response to the input of the execution command is compared with the apparatus environment information after the switching, Only in the case where it is done, the start of a series of operations of each part of the projection exposure system corresponding to the execution command is permitted.

According to this, by the mode setting means,
In addition to the first and second modes set in the invention according to claim 1, the third mode can be set.

As described above, by arbitrarily setting the first to third modes and performing the comparison operation (confirmation operation),
The exposure operation can be ensured.

According to a fourth aspect of the present invention, there is provided a lithographic apparatus according to any one of the first to third aspects,
The mode setting means may be a fourth mode instead of the second mode.
When the fourth mode is set, the control means is in the exposure processing program called from the storage means by the main control system in response to the input of the execution command. When switching a part of the device environments according to the information of the device environment set in step 1, the approval of the switching is requested.

According to this, in the invention described in claims 1 to 3, the fourth mode can be set instead of the second mode which can be set by the mode setting means.
And the fourth mode setting, the third and fourth mode setting, and the first, third and fourth mode setting. In the fourth mode, when an execution command is input, the main control system calls the exposure processing program from the storage means and switches to the apparatus environment according to the apparatus environment information set in the program, The operator is requested to approve whether or not the device environment can be switched. This is to prevent unintentional switching to an apparatus environment not intended by the operator when the execution command is input and the specified exposure processing program is executed.

As described above, in the fourth mode, when an execution command is input and the device environment is switched, the operator environment is not always intended to be switched by obtaining the operator's approval. There is an advantage that the operator side can always recognize what kind of apparatus environment has been changed, while preventing an inappropriate exposure process from being arbitrarily changed.

According to a fifth aspect of the present invention, in the lithographic apparatus according to any one of the first to third aspects, the mode setting means can further set a fourth mode. When the mode is set, the control means responds to the information of the apparatus environment set in the exposure processing program called from the storage means by the main control system in response to the input of the execution command. When the part of the device environment is switched, the approval of the switching is requested.

According to this, in the invention according to claims 1 to 3, since the fourth mode can be further set in the mode setting means, the first and second and fourth mode settings, and the second and fourth mode settings can be made. 3rd and 4th mode setting, 1st and 2nd and 3rd and 4th
It is possible to set the mode.

As described above, the combination of several modes among the first to fourth modes can be arbitrarily set, so that it becomes possible to further widen the selection range of the switching situation of the apparatus environment, and the exposure condition. The device environment can be switched more appropriately by setting the mode in accordance with the use condition and the use condition.

According to a sixth aspect of the invention, there is provided a lithographic apparatus according to any one of the first to fifth aspects,
The mode setting means can further set a fifth mode. When the fifth mode is set, the control means responds to the input of the execution command by the main control system by the storage means. When the information of the part of the apparatus environment is not set in the exposure processing program called from, the part of the apparatus environment is switched based on the apparatus environment of the default setting.

According to this, in the invention described in claims 1 to 5, since the fifth mode can be set in the mode setting means, the first, second and fifth mode settings, and the second and fifth mode settings can be made. 3rd and 5th mode setting, 1st and 2nd and 3rd and 5th
Mode setting, first and fourth and fifth mode setting, third and fourth and fifth mode setting, first and third and fourth and fifth mode setting, first and second and fifth 4th and 5th mode setting, 2nd
It becomes possible to perform the third, fourth, and fifth mode settings, and the first, second, third, fourth, and fifth mode settings. This fifth mode is preset (default setting) at the time of factory shipment when the corresponding apparatus environment information is not set in the exposure processing program called from the storage means by the input of the execution command. The device environment is automatically switched. This is because in the transitional period when the lithographic apparatus is replaced from the old model to the new model, or when the data of the exposure processing program is exchanged (version upgrade, etc.), the apparatus environment information to be switched may not be set, and the exposure processing may not be set. This is to prevent exposure processing from being performed in an unsuitable apparatus environment without switching the apparatus environment even if the program is executed.

As described above, the combination of several modes among the first to fifth modes can be arbitrarily set, so that it becomes possible to further widen the selection range of the switching situation of the apparatus environment, and the exposure conditions. The device environment can be switched more appropriately by setting the mode in accordance with the use condition and the use condition.

According to a seventh aspect of the invention, there is provided a lithographic apparatus according to any one of the first to sixth aspects,
When no mode is set in the mode setting unit, the control unit cancels the input device environment switching command.

According to this, when none of the above modes is set in the mode setting means, the switching command is canceled by the control means even if the device environment switching command is input. This is a case where the device environment does not need to be switched even if a device environment switching command is erroneously input when it is not necessary to switch the device environment.Therefore, input the switching command before it causes a malfunction. This is to cancel it.

In this way, canceling the input switching command and forcibly prohibiting the switching of the apparatus environment is suitable for constantly performing exposure processing under the same type of apparatus environment.

The invention described in Item 8 is the lithographic apparatus according to any one of Items 1 to 7,
The switching command is a command for switching the switching means according to the type of reticle or wafer.

According to this, as the switching command, for example, when the size of the pattern area changes depending on the type of reticle, the alignment mark position also changes. Therefore, the position of the alignment microscope (device environment) according to the size of the pattern area. Or a command to switch to a vacuum amount (device environment) according to the wafer size because the vacuum amount when the wafer is transferred also changes when the wafer size changes depending on the wafer type. In this way, the operator inputs a switching command according to the type of reticle or wafer to switch to the desired device environment,
Appropriate exposure processing can be performed.

The invention according to claim 9 is the lithographic apparatus according to any one of claims 1 to 8,
The switching means switches at least one of the field size of the illumination light, the numerical aperture of the projection lens, and the σ stop.

According to this, the field size of the illumination light is a target for switching the device environment for switching using the switching means. What is this field size?
It means an exposure field size for illuminating the photosensitive substrate with illumination light. The exposure field size changes, for example, 15 mm square, 17.5 mm square, and 20 mm square, because the size of the pattern area formed on the reticle changes.

As described above, when the size of the reticle pattern area changes, the position of the reticle alignment mark formed outside the reticle pattern area also changes. It is necessary to change (environment) according to the field size.

Further, as a target for switching the device environment,
There is a numerical aperture (NA) of the projection lens. The switching of the numerical aperture of the projection lens is performed by, for example, adjusting the aperture state of a variable aperture stop (NA stop) arranged on the pupil plane of the projection lens system, that is, the Fourier plane to a designated value (NA value). Done by. This NA value is determined by the process program used.

Further, there is a σ stop as a target for switching the apparatus environment. This σ diaphragm has, for example, a variable σ diaphragm unit, and a plurality of σ diaphragm plates (partial light-shielding filters) having different aperture states and opening sizes are prepared, and one σ diaphragm plate selected among them is replaced. Has been used. The choice of this σ diaphragm is determined by the process program used.

As described above, since at least one of the field size of the illumination light, the numerical aperture of the projection lens and the σ diaphragm is switched according to the process program to be executed, the table or the like corresponding to the process program is selected. When any one of the above-mentioned second, third, and fourth mode settings is made by previously inputting a device environment switching target, a switching value, and the like into the memory, the device environment suitable for the process program to be executed is set. It is possible to switch.

[0043]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described below with reference to FIG.
A description will be given based on FIG.

FIG. 1 shows a perspective view of a projection exposure apparatus 10 according to one embodiment of the lithographic apparatus of the present invention, and FIG. 2 schematically shows the internal structure thereof.
The projection exposure apparatus 10 is a wafer stepper that performs exposure operation by a so-called step-and-repeat method, which is currently mainstream as a lithographic apparatus for manufacturing a semiconductor device. As shown in FIG. Exposure apparatus main body (main body system) 12 as a system
And a control rack 14 serving as a main control system for controlling the overall control. The main body system 12 is normally housed in an environmental chamber in which the internal space is highly dust-proofed and the temperature is controlled with high accuracy. However, in FIG. 1, only the main body structure housed in this chamber is provided. It is shown schematically.

Next, the configurations of the main body system 12 and the control rack 14 will be described with reference to FIGS. 1 and 2.

The main body system 12 includes a pedestal section 16, an illumination optical system 18, a projection optical system PL, a reticle transfer system, a reticle stage RST, a wafer transfer system, and a wafer stage WS.
T, alignment system, auto focus / auto leveling (AF / AL) detection system 90, LC / MAC system and the like.

This will be described in more detail. As shown in FIG. 1, the pedestal portion 16 is supported on the floor surface via four vibration isolator 20, and the pedestal portion 16 is supported on the floor surface. It is provided with a parallel surface plate 22 and a support plate portion 24 provided above the surface plate 22 so as to face the surface plate 22. The support plate portion 24 is formed of a rectangular plate-shaped member having an opening in the center, and the projection lens system PL is arranged in the center opening portion 24A in a state orthogonal to the support plate portion 24, and is not shown in the support plate portion 24. It is held via holding means.

A projection lens system P is provided on the support plate 24.
Four legs 26 that are erected outside the four corners of the opening 24A so as to surround L, and these legs 26
A main body column 30 which is supported by the upper plate 28 and which connects the upper ends thereof to each other is arranged. A concave portion 28A is formed on the upper surface of the upper plate portion 28. The exit end of the illumination optical system 18 is arranged facing the recess 28A, and the reticle stage RST shown in FIG. 2 is arranged between the illumination optical system 18 and the upper plate 28. When the reticle R is held, the reticle stage RST moves the reticle R in the XY directions (orthogonal biaxial directions orthogonal to the optical axis AX of the projection lens system PL: in the present embodiment, substantially the same as the end surface direction of the surface plate 22). It is possible to position it at a predetermined position by slightly moving it in the θ direction (the rotation direction around the axis parallel to the optical axis AX of the projection lens system PL).

The illumination optical system 18 includes a light source unit 32.
Is housed in the back of the reticle stage RST to guide the exposure illumination light to a position above the main body column 30.
The reticle R as a mask, which is held horizontally at the top, is illuminated with uniform illumination light from above. Here, the configuration of the illumination optical system 18 will be described in detail together with the operation of each component.

As shown in FIG. 2, the illumination optical system 18 includes a light source unit 32, a shutter 34, a secondary light source forming optical system 36, a beam splitter BS, and a condenser lens system G.
1, a reticle blind 38 as an illumination field stop, an imaging lens system G2, a condenser lens system CL, a dichroic mirror DM, and the like.

The light source unit 32 has a mercury lamp as a light source, an elliptic mirror, an air-cooling fan (all are not shown), etc., and the mercury lamp is controlled by the light source controller 40 with direct current lighting at a predetermined power supply. It has become. The light source controller 40 sets a constant illumination control mode in which feedback control is performed so as to keep the light emission brightness of the mercury lamp constant, or supplies power only at the time of exposing the wafer W as a photosensitive substrate, or makes the light emission brightness about twice the rated value. It is equipped with a flash control mode that raises it and returns it to the rated value when not exposed.

When an excimer laser light source is used as the light source, the light source controller 40 performs light emission trigger control for causing the laser to emit light in a pulse and high voltage discharge voltage supply control for adjusting the light emission peak value.

Illumination light from the mercury lamp, which is reflected by an ellipsoidal mirror (not shown) in the light source unit 32, is focused on the second focal point of the elliptic mirror and passes through the shutter 34 arranged at this second focal point position. And is incident on the secondary light source forming optical system 36. As the shutter 34, for example, a rotary shutter in which three light-shielding blades are arranged at 120 ° intervals is used, and a shutter drive mechanism (SDU) 42 including a motor, a drive circuit (all not shown) and the like blocks the illumination light. Transmission is switched. Therefore, the proper exposure amount to the wafer W is controlled mainly by changing the opening time of the shutter 34.

The secondary light source forming optical system 36 includes an interference filter (not shown) for extracting i-line (wavelength 360 nm) from the illumination light from the light source unit 32, and an input lens (not shown) for collimating the extracted i-line illumination light. System, an unillustrated optical integrator (fly-eye lens group) for generating a secondary light source surface IP that is a collection of a plurality of point light source images upon incidence of collimated illumination light, and a secondary light source surface I
Light blocking filter (or illumination σ diaphragm plate) that blocks part of P
It is composed of FL. The light blocking filter FL is switched by a drive mechanism (FDU) 44 so as to be selected from a plurality of filters having different opening shapes and opening sizes fixed on a rotating turret (not shown). In the present embodiment, the light shielding filter FL can be switched by the switching unit 85 according to a preset mode so as to meet the exposure condition. Such switching of the light-shielding filter FL is called a so-called change of the device environment, and is performed by selecting a filter according to the exposure condition from a plurality of filters having different aperture shapes and aperture sizes.

The light-shielding filter (σ diaphragm plate) FL controls the aperture (NA) characteristic and the light distribution characteristic of the i-line illumination light on the reticle R to control the resolution performance during projection of the reticle pattern. The partial light-shielding filter having a cross-shaped light-shielding portion that intersects at the center is a SHRINC.
It is called a filter and realizes projection imaging with ultra-high resolution and large depth of focus for periodic patterns on the reticle.

FIG. 1 shows a rotary turret and a drive mechanism 44.
The .sigma. Aperture unit 46 accommodating .. is shown so that the operator can open the cover of the .sigma. Aperture unit 46 and install the required light blocking filter FL in the blank hole of the rotary turret.

Illumination light from the secondary light source surface IP that has passed through the light shielding filter FL in the secondary light source forming optical system 36 is reflected by the beam splitter BS by about several percent and is received by the photoelectric sensor 48. The photoelectric sensor 48 outputs a photoelectric signal according to the intensity (illuminance) of a part of the received illumination light to the exposure controller 50. The exposure controller 50 uses the SDU so that an appropriate exposure amount can be obtained based on the photoelectric signal.
42 or the shutter 34 is controlled to open for a specified time, and the light source controller 40 is instructed of a target value in the constant illuminance control mode, or illuminance up / down in the flash control mode. Give instructions such as timing.

Most of the remaining illumination light transmitted through the beam splitter BS is made into a uniform illuminance distribution on the reticle blind 38 as an illumination field stop by the condenser lens system G1. This reticle blind 38 has a rectangular opening 4
By driving the sides with the ARB drive mechanism 52, the size of the illumination visual field region, the ratio of the long side to the short side of the rectangle, or the optical axis A
The position with respect to X can be changed arbitrarily.

Illumination light uniformized at the position of the rectangular opening of the reticle blind 38 illuminates the pattern area (usually rectangular) of the reticle R via the imaging lens system G2, the condenser lens system CL, and the dichroic mirror DM. To do. At this time, the composite system of the imaging lens system G2 and the condenser lens system CL is set so that the rectangular aperture surface of the reticle blind 38 and the pattern surface of the reticle R are conjugated. The dichroic mirror DM has a characteristic of reflecting 90% or more of i-ray illumination light and transmitting tens of percent of long-wavelength light (for example, 600 nm or more).

In the present embodiment, as the projection lens system PL, a telecentric on both sides and a ⅕ reduction magnification is used. Therefore, the imaging light flux passing through the pattern area of the reticle R is projected lens system PL. Through the via, the image is projected onto the resist layer on the shot area to be superposed and exposed on the surface of the semiconductor wafer W which is vacuum-adsorbed by the ceramic holder on the wafer stage WST described later.

The reticle transport system is the main body system 12
Is a general term for each part related to the flow of the reticle R from the reticle library 54 provided on the front side of the reticle to the reticle stage RST. Each part of the reticle transport system will be described together with its operation.

As shown in FIG. 1, the reticle library 54 is provided on the front side of the main body system 12, and a plurality of reticles R used for exposure are pre-loaded inside the reticle library 54. However, one reticle R is housed in a dustproof state in one dedicated case CS, and a plurality of the cases CS are detachably attached to the reticle library 54. In FIG. 1, two reticle libraries 54 are juxtaposed, and each reticle library 54 has 10 to 15 reticle libraries.
Individual cases CS can be attached.

Behind this reticle library 54,
The reticle auto loader 56 is provided, and the reticle R used for exposure is taken out from the corresponding case CS by a transport arm (not shown) of the reticle auto loader 56, and a reticle foreign matter inspection unit (RPD) provided further behind the reticle auto loader 56. ) 58, or a pellicle foreign matter inspection unit (PPD) 60 provided directly below the reticle library 54. These foreign matter inspection units 58 and 60 inspect the presence or absence, size, presence position, etc. of foreign matter (particles) adhering to the surface of the reticle or the surface of the dust-proof pellicle to determine whether or not the use of the reticle R is appropriate. The information is provided to the operator.

The reticle R, which has been judged to be usable after the foreign matter inspection, is sent by the reticle autoloader 56 to the reticle cache (temporary storage) 62 or the reticle stage RST movably arranged on the upper plate portion 28. The reticle cashier 62 is for stocking approximately 4 to 10 reticles R naked in order to shorten the replacement time when the reticle is frequently replaced when manufacturing an ASIC device or the like.

The reticle R sent to the reticle stage RST is the optical axis A of the illumination optical system 18 or the projection lens system PL.
It is adsorbed and fixed on the reticle stage RST, which moves in parallel in the X and Y directions in the XY plane perpendicular to X, and also rotates and moves in the θ direction. This reticle stage RS
T is driven by a driving unit 66 that is biased under the control of the alignment controller 64 (see FIG. 2).

The reticle transport path space inside each of the reticle library 54, the reticle autoloader 56, the reticle foreign matter inspection unit 58, and the reticle cache 62 actually causes the generation of dust and the adhesion of dust to the reticle. The air temperature is stabilized by a special air conditioning mechanism.

The wafer transfer system is the wafer mounting section 68.
The respective constituent parts related to the flow of the wafer W from A, 68B to the wafer stage WST are collectively referred to, and the respective parts will be described together with their actions.

Wafers W as photosensitive substrates are usually stocked in a wafer carrier (not shown) with about 25 wafers as one lot.
It is detachably set to A and 68B. Then, one wafer W in the wafer carrier is taken out by a pick-up arm (not shown) of the random access type wafer autoloader 70, and wafer prealignment
It is conveyed to the unit 72.

Wafer pre-alignment unit 72
Is a turntable for mounting and rotating the transferred wafer W, and a linear notch (orientation) of the wafer W by photoelectrically and non-contactly detecting the outer shape of the wafer W while the turntable is rotating. Flat) or V-shaped notch (notch) aligns in a certain direction with a rotation direction positioning system that stops rotation of the turntable, and turntable rotation of a center point determined by the outer shape of the wafer W that has been rotationally positioned. XY that photoelectrically detects the eccentricity in the X and Y directions with respect to the center point in a non-contact manner and finely moves the turntable in the X and Y directions so as to correct the eccentricity.
And a directional positioning system.

The wafer W pre-aligned by the wafer pre-alignment unit 72 is removed from the turntable by the wafer exchange arm 74, which is a part of the wafer autoloader 70, and moved to a predetermined loading position (delivery position). The wafer is transferred onto the holder of wafer stage WST. As shown in FIG. 1, the exchange arm 74 is a loading arm 7 for transferring a wafer from the turntable to the wafer stage WST.
4A and an unloading arm 74B for transporting the wafer from the wafer stage WST to the turntable, which are provided vertically at a slight interval and are independent of each other or interlocked with each other to form a straight line. It is configured to move in the opposite direction. Further, in the above configuration, the wafer carrier and carrier mounting portions 68A, 68B, the wafer autoloader 70, the wafer pre-alignment unit 72, and the like have a wafer transfer path space in which dust is extremely attached not only to the front surface of the wafer W The air temperature is stabilized by a dedicated air conditioning mechanism if necessary.

Next, the wafer stage WST and the mounting state of the wafer W on the wafer stage WST will be described.

Wafer stage WST is composed of main body column 30.
It is configured to move two-dimensionally on the lower surface plate 22 in the XY plane orthogonal to the optical axis AX of the projection lens system PL. On wafer stage WST, adjustment stage ZLS is provided as shown in FIG. The adjustment stage ZLS has a structure that allows fine adjustment in the direction of the optical axis AX (Z direction) and fine inclination (leveling) with respect to the XY plane.

On the adjusting stage ZLS, a wafer holder (not shown) made of ceramic that can rotate by a small amount θ is provided, and the wafer W is adsorbed and held by the wafer holder at a predetermined vacuum pressure. The temperature of the wafer holder is controlled in order to suppress expansion and deformation of the wafer W due to heat accumulation during exposure.

Each moving coordinate position of wafer stage WST in the X and Y directions is sequentially measured by laser interferometer 76 shown in FIG. 2, and the coordinate position information is sent to stage controller 78.

Stage controller 78 outputs a command signal for driving wafer stage WST to drive unit 80 based on the measured coordinate position and target position information to be positioned.

Further, a part of the adjustment stage ZLS is provided with a fiducial mark plate FM fixed so as to be substantially the same height as the wafer W. Reference marks that can be detected by various alignment systems described later are formed on the surface of the reference mark plate FM. These reference marks are used to check (calibrate) the detection center points of the alignment systems and to detect the detection center points between them. Baseline length measurement,
It is used to check the position of the reticle R with respect to the wafer coordinate system, or to check the position of the best imaging plane conjugate with the pattern surface of the reticle R in the Z direction.

The alignment system is a component for precisely positioning the reticle R with respect to the optical axis of the projection lens system PL, and precisely positioning the relative positions of the reticle R and the wafer W with each other. Then, body column 30
Reticle alignment system (RA system) installed on top of the
82 and the TTL provided in the peripheral space below the reticle
(Through The Lens) type first wafer alignment system (TTLA system) 84, TTR (Through The Reticle) type reticle / wafer direct alignment system (TTRA system) 86 and projection lens provided on the RA system 82. It is a general term for an off-axis type mark imaging alignment system (FIA system) 88 (see FIG. 2) provided on the side of the system PL.

Of these, the reticle alignment system (RA
82) is a projection lens system PL for exposing the reticle R to be exposed.
For precise positioning with respect to the optical axis of the reticle R, and photoelectrically detects reticle alignment marks formed outside the pattern area of the reticle R (at two or three locations around the reticle R). Then, the detection signal indicating the amount of deviation of the mark from the predetermined reference position is output to the alignment controller 64. Alignment controller 6
4 is a drive unit 66 based on a detection signal indicating the amount of deviation.
To position the reticle R at a predetermined position.

In the present embodiment, the RA unit 83 composed of the objective lens system of the RA system 82 and the mirror M.
Corresponds to the arrangement of the reticle alignment marks that differ depending on the type of reticle R to be mounted, so that the distance between the observation position and the optical axis AX of the projection lens system PL can be moved by the switching unit 85 as switching means. Has been done. Such a movable setting of the RA unit 83 is called a so-called change of the device environment. For example, when both reticle sizes of 5 inches and 6 inches can be mounted, or even between reticles of the same size, the pattern is set. It becomes necessary when the size of the area is different.

The first wafer alignment system (TTL
A system) 84 is for TTL attached to the shot area on the wafer W from the peripheral space below the reticle R through the peripheral part within the field of view of the projection lens system PL (circle having a diameter of about 20 cm on the reticle R side). The wafer mark is photoelectrically detected, and based on the photoelectric signal, the amount of positional deviation of the TTL wafer mark in the X or Y direction with respect to the reference position (detection center point) inside the TTLA system 84, or the detection center point and the TTL wafer. The wafer coordinate position is measured when the center of the mark matches. Then, the information regarding the measured deviation amount is sent to the alignment controller 64.

The TTLA system 84 does not detect the marks on the reticle R, and therefore the illumination light (or laser spot beam) for mark detection applied to the wafer W is not applied to the resist layer on the wafer W. It has a feature that it can be set to a photosensitive long wavelength region, light absorption by the resist layer is small, and a decrease in the S / N ratio of the photoelectric signal at the time of detection can be prevented. Therefore, when performing global alignment in which some shot areas on the wafer W are sample-aligned to determine shot arrangement, or search alignment for first finding a mark at a specific position on the wafer W, T
By using the TLA system 84, high accuracy and high throughput can be secured.

In the reticle / wafer direct alignment system (TTRA system) 86, the dichroic mirror DM is used.
Photoelectrically detects a TTR reticle mark formed around the pattern area of the reticle R (extremely near) from above, and the wafer 1 on the wafer W through the window adjacent to the TTR reticle mark and the projection lens system PL. The TTR wafer mark formed in the scribe line around one shot area is photoelectrically detected, and based on the photoelectric signal, T
The amount of deviation in the X direction or the Y direction between the TR reticle mark and the wafer mark is measured. Then, the information regarding the measured deviation amount is obtained by the alignment controller 6
Sent to 4.

The TTRA system 86 is mainly used for direct alignment between the shot area and the reticle R (Die by Die) immediately before exposing each shot area on the wafer W by the step and repeat method. However, in some cases, after the baseline length measurement (baseline check), some shot areas on the wafer W are sample-aligned in advance (exposure position measurement of the shot area) before the exposure operation. It is also used for global alignment to determine the shot sequence.

The FIA system 88 is arranged at a position at a constant distance from the optical axis AX of the projection lens system PL, and is non-photosensitive to the local area including the wafer mark for TTR or TTL attached to the shot area on the wafer W. While illuminating with a wide wavelength band light of, a magnified image of the wafer mark in the local area,
Take a picture with a CCD camera along with the optical index mark inside,
Based on the image signal, the amount of deviation between the wafer mark and the index mark in the X direction or the Y direction is measured. Then, the information regarding the measured deviation amount is sent to the alignment controller 64.

Further, the index mark is formed on a transparent index plate (not shown) arranged at a position conjugate with the wafer W inside the FIA system 88, but on the image pickup surface of the CCD camera, for example, in the vertical scanning direction. It is set to be included in the lower half area, and only the enlarged image of the surface of the wafer W appears in the upper half area of the imaging surface. This is because the upper half area of the image pickup surface is the adjustment stage ZLS described above.
This is because it is used for search alignment for first finding a mark at a specific position of the wafer W that is vacuum-sucked by the upper holder, and for observing the formation state of the wafer mark.

The above-mentioned TTRA system 86, TTLA system 84, and FIA system 88 are all capable of photoelectrically detecting the corresponding reference marks formed on the reference mark plate FM on the adjustment stage ZLS. .

The AF / AL detection system 90 processes the photoelectric signal of the photoelectric sensor 92 which receives the reflected light of the non-photosensitive light beam obliquely projected onto the surface of the wafer W, thereby processing the projection lens system. Wafer W for best image plane of PL
A displacement amount (focus displacement amount) and a tilt amount (leveling displacement amount) of the surface in the Z direction are detected, and a detection signal indicating each displacement amount is sent to the stage controller 78. In response to this, the stage controller 78 outputs a command signal for driving the adjustment stage ZLS to the drive unit 80.

The LC / MAC system is a projection lens system PL.
Is to finely adjust various optical characteristics (imaging performance) of the projection image. In the present embodiment, the gas pressure of a specific air space in the projection lens system PL is forcibly controlled via the pipe 94 to obtain a projected image. A mechanism for finely adjusting the imaging magnification (pressure adjusting mechanism), and a mechanism for finely moving some of the lenses on the reticle R side of the projection lens system PL to adjust the distortion (symmetrical distortion or asymmetrical distortion) of the projected image ( MAC) 9
6. An NA variable mechanism 100 that adjusts a variable aperture diaphragm (NA diaphragm) 98 arranged on the pupil plane of the projection lens system PL, that is, the Fourier plane, to a specified value, for example, from the full aperture state to about half. And a lens controller 102 for controlling them. In the present embodiment, the variable aperture stop (NA stop) 98 is adapted to the exposure condition so that the switching unit 8 can be operated according to a preset mode.
The opening state can be adjusted by controlling the NA variable mechanism 100 by means of 5. The adjustment of the aperture state of the variable aperture stop (NA aperture) 98 is called a so-called change of the environment of the apparatus, and is performed by adjusting to a specified value from the full aperture state to about half.

Next, the structure of the control rack will be described.

The control rack 14 is constructed as a distributed system for individually controlling the units of the respective parts of the stepper, and has a processor board rack section 104 for accommodating a plurality of processor boards for controlling each unit.
A rack section for accommodating a main control unit (minicomputer) 106 (see FIG. 2) as a control means for integrally controlling each processor board, and a man with an operator.
It has a single rack configuration that stacks various operation parts for the machine interface and a rack part that stores the display part.

The light source controller 40, the exposure controller 50, the alignment controller 64, shown in FIG.
Stage controller 78, lens controller 10
2. Each of the illumination system controllers 108 is configured as a processor board including a microcomputer and is housed in the processor board rack section 104 of the control rack 14 shown in FIG.

At the top of the control rack 14, a stabilized power supply unit 110 for supplying a predetermined power supply voltage to each part in the rack is mounted, and in the rack unit therebelow, a mini computer 106 and a floppy disk driver (FDD). And are mounted. Further, in the rack section below it, a color display for a monitor for displaying various data, commands, status, program list, operation procedure information for the operator to control the apparatus, a mark imaging screen at the time of alignment, various detection signal waveforms, etc. 112, an emergency stop emergency button 114A, and an alarm release switch group 114B for stopping various alarm displays (alarm sound, patrol light, etc.) are housed.

The coordinate position information of the wafer stage WST, the focus state of the wafer, and the projection lens system P are located at the height position where the operator can most easily operate in the middle part of the control rack 14.
A display panel section 116A for displaying various pressure states when L is pressure-controlled and an operating state of a specific portion in the stepper, a basic movable section (various stages) in the stepper, and a switching section are manually operated. An operation panel unit 116B including a joystick for operating the keyboard, switches, and the like, and a keyboard unit 116C as an input unit for interacting with the minicomputer 106 are integrally provided in a shelf shape so as to project to the front. .

The display panel section 116A, the operation panel section 116B, and the keyboard section 116C are controlled by a single microprocessor for panel control, and the microprocessor itself is also under the general control of the minicomputer 106. And the board rack section 1
Each of the plurality of processor boards housed in 04 is
Each unit in the corresponding stepper body system 12 is connected via a cable 118.

The unit in the stepper main body system 12 is not limited to a form in which one processor board shares only one drive mechanism system, and also includes a form in which a plurality of drive mechanism systems are shared. In that case, each of the plurality of drive mechanism systems shall be treated as a unit.

As shown in FIG. 2, in the minicomputer 106, in addition to the monitor color display 112, the operation panel section 116B, the keyboard section 116C, the operation procedure of the entire system is stored in advance in a data file format. A data file storage device (hereinafter referred to as “storage device”) 120 as a means is also connected.

A file in which various data regarding the reticle R handled by the system are stored in the storage device 120,
A file that stores a process program that collectively describes necessary parameters for each wafer lot to be exposed, a system parameter file that presets parameters for each system, and a device constant file that presets system constants , A file that stores an execution program that collectively describes the operation commands and parameters for each unit in the system necessary for wafer exposure processing and device control, self-measurement of the accuracy and various optical characteristics of each unit in the system A file or the like in which a utility program for performing or calibrating is stored is prepared. Further, in the storage device 120 of the present embodiment, a storage area in which an exposure processing program for instructing a series of operations of each part of the projection exposure system is stored as storage means, and an operator sets the device environment as mode setting means. A storage area in which the mode of switching can be set in advance as a mode is prepared.

A main control device (minicomputer) 106 as a control means controls the alignment controller 64, the stage controller 78, and the lens controller 102 described above in accordance with a predetermined process program. Further, the minicomputer 106 is an FDU 44 and an A
Illumination system controller 10 for controlling RB drive mechanism 52
For 8 also, the operation according to the process program is instructed.

The exposure controller 50 is placed under the control of the stage controller 78, and, for example, during the exposure operation of the step-and-repeat method, in response to completion of the positioning of the wafer stage WST with respect to one shot area, an opening command for the shutter 34 is issued. Output to SDU42.

By the way, the operation for the main control unit (minicomputer) 106 as the control means is performed by the monitor color display 112 or the operation panel section 116.
For the message displayed to A, the keyboard unit 11
6C or an input operation from the operation panel unit 116B. The keyboard unit 116C or the operation panel unit 116B is, for example, a command input unit for inputting an apparatus environment switching command for switching the apparatus environment or an execution command for calling an exposure processing program to start the operation of each unit of the projection exposure system. But also.

The programs and data files required for execution are stored in the storage device 120 as storage means, and can be read from and written to the storage device 120 by operating the keyboard section 116C.

Next, in this embodiment, a case will be described in which the apparatus environment of the projection exposure apparatus is switched according to the type of reticle used in the projection exposure apparatus. Here, as the reticle type, even if the reticle size is the same, the device environment (the position of the RA system 82 that detects the mark position for reticle alignment) is switched according to the size of the pattern area formed on the reticle. The case will be described. Of course, the device environment that can be switched is not limited to the above example, and the numerical aperture of the projection lens, the σ diaphragm plate, and the like, which will be described later, may be switched, or other device environments may be switched.

Therefore, the objective lens system of the RA (reticle alignment) system 82 as an apparatus environment in which switching is performed corresponds to the arrangement of mark positions for reticle alignment which differ depending on the type of the reticle R to be mounted. It is movable so as to switch the distance between the position and the optical axis AX of the projection lens system PL.

Of the various parameters required for executing the exposure process, the parameters for each process are stored in advance in the process program file of the storage device 120. Then, the parameters relating to the reticle R used in this embodiment are stored in the reticle type file of the storage device 120. This reticle type file is referred to by a process program, and when a certain process program is selected, a reticle type suitable for it is automatically determined.

Further, the projection exposure apparatus 10 of the present embodiment has a mode setting means for determining the operation mode of the system in advance, and the switching mode of the apparatus environment is set in advance in the system parameter file in the storage device 120 ( Part of the mode setting means).

Next, in this embodiment, the operator sets a mode for switching and controlling the apparatus environment, and the controller switches the apparatus environment based on the set mode, and the exposure operation is performed under the apparatus environment. The flow of a series of operations performed by the projection exposure apparatus will be described with reference to FIG.

In FIG. 3, it is assumed that a mode setting process is performed in advance for the first to fifth modes before starting a series of operations. Of course, the settable modes are not limited to these, and other mode settings may be performed.

The modes that can be set in this embodiment have the following meanings.

First mode (mode 1): When a device environment switching command is input, the device environment is switched to the device environment according to the input command.

Second mode (mode 2): When an execution command is input, the reticle type information (apparatus environment information) set in the reticle type file (exposure processing program) called by the input command is used. In this mode, the device environment is automatically switched according to the change.

Third mode (mode 3): The state of the apparatus environment switched by the apparatus environment switching command is compared with the apparatus environment information in the exposure processing program called by the execution command. In this mode, the start of the exposure processing operation by the execution command is permitted only when they match.

Fourth mode (mode 4): a mode in which the operator is required to approve the switching when the apparatus environment is switched in accordance with the apparatus environment information in the exposure processing program called by the execution command being input. Is.

Fifth mode (mode 5): If the apparatus environment information is not set in the exposure processing program called by the execution command being input, it is set (default setting) in advance at the time of factory shipment. In this mode, the device environment is switched based on the existing device environment information.

Next, the above modes 1 to 5 will be described in detail individually.

Switching of the device environment when mode 1 is set is performed by inputting a device environment switching command. The operator inputs a device environment switching command from the keyboard 116C or the operation panel 116B to instruct switching of the device environment.

As the input device environment switching command, here, the exposure field size of the reticle type is 15 mm square, 17.5 mm square, 20 mm.
The reticle R having a corner is designated. When a device environment switching command is input and a desired device environment is designated, the observation position of the objective lens system of the RA system 82 comes to the alignment mark position according to the size of the exposure field of the designated reticle R. like,
The switching operation of the device environment for changing the distance between the projection lens system PL and the optical axis AX is performed.

As described above, in mode 1, the RA system objective lens system is moved to a position where the alignment mark of the reticle can be observed by inputting a switching command for designating the reticle type having a predetermined exposure field size. The switching operation of the device environment is performed.

After that, when an execution command for the exposure process is input, the data corresponding to the execution command is specified, that is, the process program is specified, and the reticle alignment process becomes possible and specified as it is. The wafer exposure operation is performed based on the data regarding the exposure processing conditions.

If there is no selection processing of a different mode or input of another apparatus environment switching command, the exposure operation is repeated under the same apparatus environment.

As described above, the mode 1 is suitable for the case where the exposure process is repeatedly performed by continuously using the apparatus environment (reticle) of the same type.

Next, when mode 2 is set,
When the operator inputs the exposure process execution command,
The device environment is automatically switched by referring to the reticle type information set in the reticle type file written in the process program by specifying the data. That is, when the operator inputs an exposure processing execution command from the keyboard 116C or the operation panel 116B to instruct the main controller 106,
Main controller 106 designates the process program to be used, and refers to the reticle type file from the designated process program, so that the type of device environment suitable for the reticle to be used can be appropriately determined. Main controller 106 switches the device environment based on the device environment thus determined.

The switching of the device environment is performed in the mode 1 here.
In order to move the observation position of the objective lens system of the RA system 82, the distance between the projection lens system PL and the optical axis AX is changed by driving the RA unit 83 by the switching unit 85. . Then, the switching operation of the apparatus environment is unconditionally performed before the start of the exposure processing, and at this time, confirmation by the operator is not required.

This mode 2 is suitable for the operation when the apparatus environment is automatically switched and used according to the reticle to be used when executing a plurality of types of exposure processing programs.

Next, when mode 3 is set,
Similar to the mode 1, when the operator inputs a device environment switching command, the device environment is switched according to the command.

Then, when the operator inputs and instructs an execution command at the time of executing the exposure process, main controller 106 designates the process program to be used,
Refer to the reticle type file from the specified process program, check the type of equipment environment that matches the reticle used, and check whether it matches the current equipment environment that was switched above. . As a result of the confirmation by the main control device 106, if the device environments match, the execution of the exposure process execution command is permitted and the exposure operation is performed.

If the switched device environment and the device environment suitable for the execution command do not match, it is possible to request the assistance of the operator or display an error message and terminate the processing.

Next, when mode 4 is set,
The operator operates the keyboard 116C or the operation panel 116.
When the execution command of the exposure processing is input by B to instruct the main controller 106, the main controller 106 specifies the process program to be used, and the reticle set in the reticle type file in the specified process program. Check the necessity of switching the device environment by referring to the type information of. As a result of the check, the main controller 106 finds that the reticle type is different,
When it is necessary to switch the device environment, the operator is asked to confirm whether to switch the device environment. This is because when switching the apparatus environment according to the reticle to be used, it is necessary to always ask for confirmation before switching to prevent damage when exposure processing is performed in an unsuitable apparatus environment. . Further, the reason why the operator is asked to confirm when switching the device environment is to enable the operator to always grasp the current state of the device environment.

Then, the device environment is switched only when the operator understands that the device environment has been switched. This switching of the device environment is performed by moving the observation position of the objective lens system of the RA system 82 as in the case of the mode 1.
This is performed by changing the distance between the projection lens system PL and the optical axis AX. The exposure operation is performed based on the switched device environment.

In the above description of Mode 4, if the operator's consent is not obtained, the above switching operation is not performed, the operator's assistance is requested, an error message is displayed, and the process is terminated. Can be considered.

The mode 4 is suitable for the operation of semi-automatically switching so that confirmation of the switching is required when the device environment is switched according to the reticle to be used.

Next, when mode 5 is set,
It is premised that a predetermined apparatus environment is set at the time of factory shipment of the projection exposure apparatus. That is, here, it is assumed that the exposure field size is set to the default.

Then, the operator inputs a command for executing the exposure process through the keyboard or the operation panel to instruct the main controller 106. When the execution command of this exposure processing is input, main controller 106 designates a process program that designates data, and checks whether or not a reticle type file is set in this designated process program. . If a reticle type file is set in the process program, the RA system 82 is set at the alignment mark position that is suitable for the reticle field size indicated by the reticle type file.
The RA unit 83 is driven by the switching unit 85 so that the observation position of the objective lens system of 1 comes to change, and the distance from the optical axis AX of the projection lens system PL is changed. Then, the exposure operation is performed based on the switched device environment.

On the contrary, if the reticle type file is not set in the process program, or even if the reticle type file is set, the device environment information corresponding to the difference between the old and new software versions is included. If not, the device environment is not switched, but the device environment is switched to a reticle with a preset default field size.

As described above, when the corresponding apparatus environment information is not included in the process program, the exposure operation is performed after switching to the apparatus environment (reticle type file) which has been preset in advance.

In the case of this mode 5, the process program specified in the transitional period in which data is exchanged to switch between the old and new devices or to upgrade the program software used in the device is used. It may happen that the corresponding device environment information is not included. However, since it can be used as it is, it is suitable for the case of operating for the time being by using the device environment information set by default.

Further, although the above description has been made on the premise that the mode is set in advance, if the mode is not set, even if the device environment switching command is input, it is forced. It is also possible to prohibit the switching of the device environment. This is for the purpose of preventing the device environment from being switched carelessly, and is suitable when the reticle of the same type is constantly used.

As described above, in the projection exposure apparatus according to this embodiment, by setting the mode, even a single projection exposure apparatus can switch and use a plurality of apparatus environments. It is not necessary to prepare as many projection exposure apparatuses as the number of types of equipment environments to be used, cost can be reduced, and the equipment environment can be automatically switched to the optimum equipment environment according to the process program to be used. As a result, labor saving and automation of the switching device can be achieved.

The target for switching the apparatus environment in this embodiment is such that the observation position of the RA system objective lens system is moved according to the type of reticle, but the invention is not limited to this. It is assumed that the variable aperture stop (NA stop) arranged on the pupil plane of the lens system PL, that is, the Fourier plane is adjusted to a specified value from a fully open state to about half the value, for example. May be. Also in this case, since the NA value to be used is determined by the used process program, it is possible to set and operate the mode as in the case of the above-described embodiment.

Further, as a target of switching the device environment,
A variable σ diaphragm unit may be envisioned. In this variable σ diaphragm unit, a plurality of σ diaphragm plates (partial light-shielding filters) having different aperture shapes, aperture sizes, etc. are prepared in advance, and a mechanism for automatically exchanging a selected one of them is provided. However, the device environment may be switched by this automatic exchange mechanism. Also in this case, since the σ diaphragm plate to be used can be determined by the used process program, it is possible to set and operate the mode as in the case of the above-described embodiment.

Further, in the above embodiment, the case where the apparatus environment is switched when the reticle types are different has been described, but similarly, the case where the wafer types are different can be applied.

That is, when it is necessary to process wafers of different wafer sizes or wafer types with one device, a mode can be prepared in the same manner as the reticle if a mechanism for switching the state of the device is equipped with them. By doing so, it becomes possible to select the device environment.

[0142]

As described above, according to the present invention,
By setting the mode, it is possible to execute an exposure processing program that requires a plurality of types of apparatus environments with a single exposure apparatus.

Further, when switching from one apparatus environment to another apparatus environment, simply inputting the exposure processing program to be executed automatically changes the state of each section of the apparatus so as to obtain the apparatus environment required for the program. Since they can be switched, the device environment can be easily and appropriately switched without performing a troublesome switching operation of the device environment.

Further, by inputting a desired device environment switching command, the operator can manually set the desired device environment.

As for the method of switching the device environment, since a plurality of modes are prepared in advance, it is possible to select the most suitable method in accordance with the operating method such as the process program management and the device management. Labor saving and automation of the switching operation can be achieved.

[Brief description of drawings]

FIG. 1 is a schematic perspective view showing an overall configuration of a projection exposure apparatus according to a first embodiment.

FIG. 2 is a block diagram showing an internal configuration of the apparatus shown in FIG.

FIG. 3 is a diagram illustrating contents of first to fifth modes that can be set in the present embodiment.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 Projection exposure apparatus (lithography apparatus) 12 Main system (projection exposure system) 85 Switching unit (part of switching means) 106 Main controller (main control system, control means, part of switching means) 116C Keyboard unit (command input) 116B Operation panel section (part of command input means) 120 Recording device (storage means, mode setting means) R Reticle (mask) W Wafer (photosensitive substrate) PL Projection optical system

Claims (9)

[Claims] 1. A lithographic apparatus comprising: a projection exposure system for transferring a pattern of a mask onto a photosensitive substrate via a projection optical system; and a main control system for integrally controlling the operation of each part of the projection exposure system. A switching means for switching a device environment of a part of the projection exposure system; a storage means for storing at least one exposure processing program for instructing a series of operations of each part of the projection exposure system; To input an apparatus environment switching command for switching and an execution command for calling a desired exposure processing program from the storage means and for starting a series of operations of each unit of the projection exposure system in accordance with the called exposure processing program Command input means for responding to the input of the switching command; A first mode for switching the device environment of the part of the optical system, and a device environment set in the exposure processing program called from the storage means by the main control system in response to the input of the execution command. Mode setting means capable of presetting any one of a second mode for switching the device environment of the part of the projection exposure system according to information; the part depending on the mode set in the mode setting means And a control means for switching the apparatus environment. 2. The mode setting means can set a third mode in place of the first mode. When the third mode is set, the control means inputs the switching command. In response to the change of the device environment of the part of the projection exposure system, and the device environment set in the exposure processing program called from the storage means by the main control system in response to the input of the execution command. And the information of the apparatus environment after the switching are compared, and only when they match, the start of a series of operations of each unit of the projection exposure system corresponding to the execution command is permitted. Item 2. The lithographic apparatus according to Item 1. 3. The mode setting means can further set a third mode. When the third mode is set, the control means responds to the input of the switching command by the projection exposure. The device environment of the part of the system is switched, and information of the device environment set in the exposure processing program called from the storage means by the main control system in response to the input of the execution command and the information after the switching. The lithographic apparatus according to claim 1, wherein the apparatus environment information is compared, and only when they match, the start of a series of operations of each part of the projection exposure system corresponding to the execution command is permitted. . 4. The mode setting means is capable of setting a fourth mode instead of the second mode.
When the mode is set, the control means responds to the information of the apparatus environment set in the exposure processing program called from the storage means by the main control system in response to the input of the execution command. A lithographic apparatus according to any one of claims 1 to 3, wherein a switching approval is sought when switching some of the apparatus environments. 5. The mode setting means can further set a fourth mode, and when the fourth mode is set, the control means responds to the input of the execution command by the main control. When switching the part of the apparatus environment according to the information of the apparatus environment set in the exposure processing program called from the storage means by the system,
A lithographic apparatus according to any one of claims 1 to 3, characterized in that a switch approval is sought. 6. The mode setting means can further set a fifth mode, and when the fifth mode is set, the control means responds to the input of the execution command by the main control. When the information of the part of the apparatus environment is not set in the exposure processing program called from the storage unit by the system, the part of the apparatus environment is switched based on the default setting of the apparatus environment. A lithographic apparatus according to any one of claims 1 to 5, 7. The method according to claim 1, wherein when no mode is set in the mode setting unit, the control unit cancels the input device environment switching command. A lithographic apparatus as described. 8. The switching command is a command for switching the switching means according to the type of a reticle or a wafer.
The lithographic apparatus according to any one of the above. 9. The switching means switches at least one of a field size of illumination light, a numerical aperture of a projection lens and a σ stop. A lithographic apparatus according to claim 1.